JP2006203222A5 - - Google Patents

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Publication number
JP2006203222A5
JP2006203222A5 JP2006039971A JP2006039971A JP2006203222A5 JP 2006203222 A5 JP2006203222 A5 JP 2006203222A5 JP 2006039971 A JP2006039971 A JP 2006039971A JP 2006039971 A JP2006039971 A JP 2006039971A JP 2006203222 A5 JP2006203222 A5 JP 2006203222A5
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JP
Japan
Prior art keywords
electron multiplier
gain
signal
test signal
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006039971A
Other languages
English (en)
Japanese (ja)
Other versions
JP5319872B2 (ja
JP2006203222A (ja
Filing date
Publication date
Priority claimed from GBGB0501149.9A external-priority patent/GB0501149D0/en
Application filed filed Critical
Publication of JP2006203222A publication Critical patent/JP2006203222A/ja
Publication of JP2006203222A5 publication Critical patent/JP2006203222A5/ja
Application granted granted Critical
Publication of JP5319872B2 publication Critical patent/JP5319872B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006039971A 2005-01-20 2006-01-20 電子増倍ｃｃｄの自動較正 Expired - Fee Related JP5319872B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0501149.9A GB0501149D0 (en) 2005-01-20 2005-01-20 Automatic calibration of electron multiplying CCds
GB0501149.9 2005-01-20

Publications (3)

Publication Number Publication Date
JP2006203222A JP2006203222A (ja) 2006-08-03
JP2006203222A5 true JP2006203222A5 (enExample) 2009-02-26
JP5319872B2 JP5319872B2 (ja) 2013-10-16

Family

ID=34224874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006039971A Expired - Fee Related JP5319872B2 (ja) 2005-01-20 2006-01-20 電子増倍ｃｃｄの自動較正

Country Status (6)

Country Link
US (1) US7609311B2 (enExample)
EP (1) EP1688960B1 (enExample)
JP (1) JP5319872B2 (enExample)
AT (1) ATE504923T1 (enExample)
DE (1) DE602006021080D1 (enExample)
GB (1) GB0501149D0 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2429521A (en) 2005-08-18 2007-02-28 E2V Tech CCD device for time resolved spectroscopy
GB2431538B (en) * 2005-10-24 2010-12-22 E2V Tech CCD device
DE102006000976A1 (de) 2006-01-07 2007-07-12 Leica Microsystems Cms Gmbh Vorrichtung, Mikroskop mit Vorrichtung und Verfahren zum Kalibrieren eines Photosensor-Chips
GB2435126A (en) * 2006-02-14 2007-08-15 E2V Tech EMCCD device with multiplication register gain measurement allowing realtime calibration of a camera in use.
JP4835836B2 (ja) 2006-03-30 2011-12-14 日本電気株式会社 電子増倍ゲイン校正機構および電子増倍ゲイン校正方法
JP5290530B2 (ja) 2007-03-19 2013-09-18 日本電気株式会社 電子増倍型撮像装置
JP2008271049A (ja) * 2007-04-18 2008-11-06 Hamamatsu Photonics Kk 撮像装置及びそのゲイン調整方法
JP4851388B2 (ja) * 2007-05-16 2012-01-11 浜松ホトニクス株式会社 撮像装置
KR100976284B1 (ko) * 2007-06-07 2010-08-16 가부시끼가이샤 도시바 촬상 장치
GB0717484D0 (en) * 2007-09-07 2007-10-17 E2V Tech Uk Ltd Gain measurement method
FR2924862B1 (fr) * 2007-12-10 2010-08-13 Commissariat Energie Atomique Dispositif microelectronique photosensible avec multiplicateurs par avalanche
WO2009102839A2 (en) * 2008-02-14 2009-08-20 The Research Foundation Of State University Of New York Imaging array data acquisition system and use thereof
EP2272027B1 (en) * 2008-04-16 2014-03-26 Elbit Systems Ltd. Multispectral enhanced vision system and method for aircraft landing in inclement weather conditions
JP2010161183A (ja) * 2009-01-07 2010-07-22 Panasonic Corp 固体撮像装置
JP5243984B2 (ja) 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
US8537260B2 (en) * 2009-05-08 2013-09-17 Photon Etc, Inc. Apparatus and method for low noise imaging
JP5551510B2 (ja) 2010-05-14 2014-07-16 浜松ホトニクス株式会社 電子増倍率の測定方法及び撮像装置
JP5547548B2 (ja) 2010-05-14 2014-07-16 浜松ホトニクス株式会社 電子増倍率の測定方法
CN102158661B (zh) * 2011-01-26 2012-09-19 中国科学院长春光学精密机械与物理研究所 一种emccd特有信号的驱动系统
US8847285B2 (en) 2011-09-26 2014-09-30 Semiconductor Components Industries, Llc Depleted charge-multiplying CCD image sensor
JP6267529B2 (ja) * 2014-02-04 2018-01-24 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び画像生成方法
GB201516701D0 (en) * 2015-09-21 2015-11-04 Innovation & Business Dev Solutions Ltd Time of flight distance sensor
US9930276B2 (en) 2016-01-14 2018-03-27 Semiconductor Components Industries, Llc Methods for clocking an image sensor
US9905608B1 (en) 2017-01-11 2018-02-27 Semiconductor Components Industries, Llc EMCCD image sensor with stable charge multiplication gain
GB201704452D0 (en) 2017-03-21 2017-05-03 Photonic Vision Ltd Time of flight sensor
CN110996095B (zh) * 2019-12-03 2021-09-14 哈尔滨工程大学 一种倍增ccd倍增增益拟合测量方法
CN111988546B (zh) * 2020-09-15 2023-03-31 哈尔滨工程大学 一种倍增ccd倍增增益及读出噪声测量方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898452A (en) * 1974-08-15 1975-08-05 Itt Electron multiplier gain stabilization
JP2867655B2 (ja) * 1990-08-09 1999-03-08 ソニー株式会社 固体撮像素子
EP0526993B1 (en) * 1991-07-11 2000-09-27 Texas Instruments Incorporated Charge multiplying detector (CMD) suitable for small pixel CCD image sensors
JP3221103B2 (ja) * 1992-10-13 2001-10-22 ソニー株式会社 固体撮像装置
GB2323471B (en) * 1997-03-22 2002-04-17 Eev Ltd CCd imagers
GB9828166D0 (en) * 1998-12-22 1999-02-17 Eev Ltd Imaging apparatus
DE60021679T2 (de) * 1999-05-18 2006-06-08 Olympus Corporation Endoskop
US7420605B2 (en) * 2001-01-18 2008-09-02 E2V Technologies (Uk) Limited Solid state imager arrangements
JP2003009000A (ja) * 2001-06-21 2003-01-10 Fuji Photo Film Co Ltd 撮像装置
US6784412B2 (en) * 2001-08-29 2004-08-31 Texas Instruments Incorporated Compact image sensor layout with charge multiplying register
JP2005005512A (ja) * 2003-06-12 2005-01-06 Matsushita Electric Ind Co Ltd 固体撮像装置
US7078670B2 (en) * 2003-09-15 2006-07-18 Imagerlabs, Inc. Low noise charge gain circuit and CCD using same

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