ATE504923T1 - Automatische eichung einer ccd mit ladungsvervielfachung - Google Patents

Automatische eichung einer ccd mit ladungsvervielfachung

Info

Publication number
ATE504923T1
ATE504923T1 AT06075126T AT06075126T ATE504923T1 AT E504923 T1 ATE504923 T1 AT E504923T1 AT 06075126 T AT06075126 T AT 06075126T AT 06075126 T AT06075126 T AT 06075126T AT E504923 T1 ATE504923 T1 AT E504923T1
Authority
AT
Austria
Prior art keywords
electron multiplier
ccd
photodetector
test signal
automatic calibration
Prior art date
Application number
AT06075126T
Other languages
German (de)
English (en)
Inventor
Donal Denvir
Original Assignee
Andor Technology Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Andor Technology Plc filed Critical Andor Technology Plc
Application granted granted Critical
Publication of ATE504923T1 publication Critical patent/ATE504923T1/de

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N17/00—Diagnosis, testing or measuring for television systems or their details
    • H04N17/002—Diagnosis, testing or measuring for television systems or their details for television cameras
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • General Health & Medical Sciences (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
AT06075126T 2005-01-20 2006-01-18 Automatische eichung einer ccd mit ladungsvervielfachung ATE504923T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0501149.9A GB0501149D0 (en) 2005-01-20 2005-01-20 Automatic calibration of electron multiplying CCds

Publications (1)

Publication Number Publication Date
ATE504923T1 true ATE504923T1 (de) 2011-04-15

Family

ID=34224874

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06075126T ATE504923T1 (de) 2005-01-20 2006-01-18 Automatische eichung einer ccd mit ladungsvervielfachung

Country Status (6)

Country Link
US (1) US7609311B2 (enExample)
EP (1) EP1688960B1 (enExample)
JP (1) JP5319872B2 (enExample)
AT (1) ATE504923T1 (enExample)
DE (1) DE602006021080D1 (enExample)
GB (1) GB0501149D0 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2429521A (en) 2005-08-18 2007-02-28 E2V Tech CCD device for time resolved spectroscopy
GB2431538B (en) * 2005-10-24 2010-12-22 E2V Tech CCD device
DE102006000976A1 (de) 2006-01-07 2007-07-12 Leica Microsystems Cms Gmbh Vorrichtung, Mikroskop mit Vorrichtung und Verfahren zum Kalibrieren eines Photosensor-Chips
GB2435126A (en) * 2006-02-14 2007-08-15 E2V Tech EMCCD device with multiplication register gain measurement allowing realtime calibration of a camera in use.
JP4835836B2 (ja) 2006-03-30 2011-12-14 日本電気株式会社 電子増倍ゲイン校正機構および電子増倍ゲイン校正方法
JP5290530B2 (ja) 2007-03-19 2013-09-18 日本電気株式会社 電子増倍型撮像装置
JP2008271049A (ja) * 2007-04-18 2008-11-06 Hamamatsu Photonics Kk 撮像装置及びそのゲイン調整方法
JP4851388B2 (ja) * 2007-05-16 2012-01-11 浜松ホトニクス株式会社 撮像装置
KR100976284B1 (ko) * 2007-06-07 2010-08-16 가부시끼가이샤 도시바 촬상 장치
GB0717484D0 (en) * 2007-09-07 2007-10-17 E2V Tech Uk Ltd Gain measurement method
FR2924862B1 (fr) * 2007-12-10 2010-08-13 Commissariat Energie Atomique Dispositif microelectronique photosensible avec multiplicateurs par avalanche
WO2009102839A2 (en) * 2008-02-14 2009-08-20 The Research Foundation Of State University Of New York Imaging array data acquisition system and use thereof
EP2272027B1 (en) * 2008-04-16 2014-03-26 Elbit Systems Ltd. Multispectral enhanced vision system and method for aircraft landing in inclement weather conditions
JP2010161183A (ja) * 2009-01-07 2010-07-22 Panasonic Corp 固体撮像装置
JP5243984B2 (ja) 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
US8537260B2 (en) * 2009-05-08 2013-09-17 Photon Etc, Inc. Apparatus and method for low noise imaging
JP5551510B2 (ja) 2010-05-14 2014-07-16 浜松ホトニクス株式会社 電子増倍率の測定方法及び撮像装置
JP5547548B2 (ja) 2010-05-14 2014-07-16 浜松ホトニクス株式会社 電子増倍率の測定方法
CN102158661B (zh) * 2011-01-26 2012-09-19 中国科学院长春光学精密机械与物理研究所 一种emccd特有信号的驱动系统
US8847285B2 (en) 2011-09-26 2014-09-30 Semiconductor Components Industries, Llc Depleted charge-multiplying CCD image sensor
JP6267529B2 (ja) * 2014-02-04 2018-01-24 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び画像生成方法
GB201516701D0 (en) * 2015-09-21 2015-11-04 Innovation & Business Dev Solutions Ltd Time of flight distance sensor
US9930276B2 (en) 2016-01-14 2018-03-27 Semiconductor Components Industries, Llc Methods for clocking an image sensor
US9905608B1 (en) 2017-01-11 2018-02-27 Semiconductor Components Industries, Llc EMCCD image sensor with stable charge multiplication gain
GB201704452D0 (en) 2017-03-21 2017-05-03 Photonic Vision Ltd Time of flight sensor
CN110996095B (zh) * 2019-12-03 2021-09-14 哈尔滨工程大学 一种倍增ccd倍增增益拟合测量方法
CN111988546B (zh) * 2020-09-15 2023-03-31 哈尔滨工程大学 一种倍增ccd倍增增益及读出噪声测量方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898452A (en) * 1974-08-15 1975-08-05 Itt Electron multiplier gain stabilization
JP2867655B2 (ja) * 1990-08-09 1999-03-08 ソニー株式会社 固体撮像素子
EP0526993B1 (en) * 1991-07-11 2000-09-27 Texas Instruments Incorporated Charge multiplying detector (CMD) suitable for small pixel CCD image sensors
JP3221103B2 (ja) * 1992-10-13 2001-10-22 ソニー株式会社 固体撮像装置
GB2323471B (en) * 1997-03-22 2002-04-17 Eev Ltd CCd imagers
GB9828166D0 (en) * 1998-12-22 1999-02-17 Eev Ltd Imaging apparatus
DE60021679T2 (de) * 1999-05-18 2006-06-08 Olympus Corporation Endoskop
US7420605B2 (en) * 2001-01-18 2008-09-02 E2V Technologies (Uk) Limited Solid state imager arrangements
JP2003009000A (ja) * 2001-06-21 2003-01-10 Fuji Photo Film Co Ltd 撮像装置
US6784412B2 (en) * 2001-08-29 2004-08-31 Texas Instruments Incorporated Compact image sensor layout with charge multiplying register
JP2005005512A (ja) * 2003-06-12 2005-01-06 Matsushita Electric Ind Co Ltd 固体撮像装置
US7078670B2 (en) * 2003-09-15 2006-07-18 Imagerlabs, Inc. Low noise charge gain circuit and CCD using same

Also Published As

Publication number Publication date
EP1688960A2 (en) 2006-08-09
JP5319872B2 (ja) 2013-10-16
GB0501149D0 (en) 2005-02-23
JP2006203222A (ja) 2006-08-03
EP1688960B1 (en) 2011-04-06
EP1688960A3 (en) 2008-04-02
US20060163474A1 (en) 2006-07-27
DE602006021080D1 (de) 2011-05-19
US7609311B2 (en) 2009-10-27

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