JP2006196650A5 - - Google Patents
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- Publication number
- JP2006196650A5 JP2006196650A5 JP2005006232A JP2005006232A JP2006196650A5 JP 2006196650 A5 JP2006196650 A5 JP 2006196650A5 JP 2005006232 A JP2005006232 A JP 2005006232A JP 2005006232 A JP2005006232 A JP 2005006232A JP 2006196650 A5 JP2006196650 A5 JP 2006196650A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005006232A JP2006196650A (ja) | 2005-01-13 | 2005-01-13 | 半導体不揮発性メモリ装置およびその消去方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005006232A JP2006196650A (ja) | 2005-01-13 | 2005-01-13 | 半導体不揮発性メモリ装置およびその消去方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006196650A JP2006196650A (ja) | 2006-07-27 |
| JP2006196650A5 true JP2006196650A5 (enExample) | 2007-06-28 |
Family
ID=36802489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005006232A Pending JP2006196650A (ja) | 2005-01-13 | 2005-01-13 | 半導体不揮発性メモリ装置およびその消去方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006196650A (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE409350T1 (de) * | 2005-06-03 | 2008-10-15 | Imec Inter Uni Micro Electr | Extraktionsverfahren für die lastverteilung in einem halbleiterbauelement |
| JP4950490B2 (ja) * | 2005-12-28 | 2012-06-13 | 株式会社東芝 | 不揮発性スイッチング素子およびその製造方法ならびに不揮発性スイッチング素子を有する集積回路 |
| KR20090097893A (ko) * | 2006-11-29 | 2009-09-16 | 램버스 인코포레이티드 | 작동열화를 반전시킬 가열회로가 내장된 집적회로 |
| US11244727B2 (en) | 2006-11-29 | 2022-02-08 | Rambus Inc. | Dynamic memory rank configuration |
| US8344475B2 (en) | 2006-11-29 | 2013-01-01 | Rambus Inc. | Integrated circuit heating to effect in-situ annealing |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| EP2191473A2 (en) * | 2007-09-05 | 2010-06-02 | Rambus Inc. | Method and apparatus to repair defects in nonvolatile semiconductor memory devices |
| KR20090086815A (ko) * | 2008-02-11 | 2009-08-14 | 삼성전자주식회사 | 메모리 장치 및 메모리 열처리 방법 |
| KR20100013485A (ko) * | 2008-07-31 | 2010-02-10 | 삼성전자주식회사 | 메모리 장치 및 웨어 레벨링 방법 |
| US8488387B2 (en) * | 2011-05-02 | 2013-07-16 | Macronix International Co., Ltd. | Thermally assisted dielectric charge trapping flash |
| JP6556556B2 (ja) * | 2015-08-20 | 2019-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US11989091B2 (en) | 2021-11-12 | 2024-05-21 | Samsung Electronics Co., Ltd. | Memory system for performing recovery operation, memory device, and method of operating the same |
| CN116246981A (zh) * | 2023-02-14 | 2023-06-09 | 华中科技大学 | 提高老化3d nor flash芯片擦写速度的方法及系统 |
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2005
- 2005-01-13 JP JP2005006232A patent/JP2006196650A/ja active Pending