JP2006194772A

JP2006194772A - Thin-film type wafer testing device and its probe detecting/transmitting structure

Info

Publication number: JP2006194772A
Application number: JP2005007787A
Authority: JP
Inventors: Manzen Shu; 萬全周; Iho Han; 偉芳范
Original assignee: Individual
Current assignee: Individual
Priority date: 2005-01-14
Filing date: 2005-01-14
Publication date: 2006-07-27

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin-film type wafer testing device and its probe detecting/transmitting structure. <P>SOLUTION: The testing device has a substrate, a buffer connecting device is screwed with a detecting/transmitting device on the substrate, and a probe card is disposed in the buffer connecting device. When the probe card is brought into contact with a wafer and an yield test is performed, the wafer yield is detected further certainly and rapidly, the maintenance can be simplified, and the time can be saved by a buffer position limitation moving characteristic of the buffer connecting device and an accurate and stable detecting function of the detecting/transmitting device. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は一種の半導体ウエハー試験の装置に係り、特に、ウエハーをダイに切断する前に、先に歩留り試験を行なう薄膜式ウエハー試験装置に関する。 The present invention relates to a kind of semiconductor wafer test apparatus, and more particularly, to a thin film wafer test apparatus that first performs a yield test before cutting a wafer into dies.

半導体製造において、いわゆるＩＣパッケージ工程は、全体のウエハーにレイアウト設計、現像、エッチング等の一連の工程を行ない、パッケージ作業を行なった後に、ウエハーを複数のダイに切断し、最後にいわゆるＩＣデバイスとなす。一般にウエハー切断前の、ダイに対する試験はウエハー試験と称され、プローブを利用してウエハーに回路試験を行ない、チップの設計がますます複雑化するなかで、ウエハー試験はウエハー生産歩留りの高低に関係し、これにより全体の製造過程中で最も鍵となる部分である。 In semiconductor manufacturing, a so-called IC package process is performed by performing a series of processes such as layout design, development, etching and the like on the entire wafer, and after performing the packaging work, the wafer is cut into a plurality of dies, and finally a so-called IC device. Eggplant. In general, testing of a die before wafer cutting is called a wafer test. Circuit testing is performed on a wafer using a probe, and the design of chips is becoming more and more complex. Wafer testing is related to the level of wafer production yield. This is the most important part of the overall manufacturing process.

図１を参照されたい。切断前のウエハーは、その外表面がパッドで被覆され、該パッドの上に保護用の酸化膜が形成され、並びに複数の縦横に分布する切断線エリアにより複数のダイユニットが区画され、ウエハーが試験台に置かれ、試験用のプローブカードのプローブがその外層の酸化膜に通され、該パッドに接触させられて導電試験の目的が達成される。 Please refer to FIG. The wafer before cutting is coated with a pad on the outer surface, a protective oxide film is formed on the pad, and a plurality of die units are defined by a plurality of cutting line areas distributed vertically and horizontally. The probe of the test probe card is placed on a test stand, and the probe of the test card is passed through the outer layer oxide film and brought into contact with the pad to achieve the purpose of the conductivity test.

図２を参照されたい。周知の技術によると、プローブカード９０の複数のプローブ９１は基板９２の外縁に分布し、且つ各プローブ９１の一端は該基板９２にソルダリングされ、別端はエポキシ層９３で基板９２に固定され、且つこの端の端縁が所定角度に折り曲げられてチップ（Ｔｉｐ）９１１が形成され、該プローブカード９０がウエハーの導電試験を行なう時、これらチップ９１１がウエハーの酸化膜に突き刺されて導電試験の目的を達成する。ただしこのような周知のプローブカードを試験に使用すると、その構造設計の不良により以下のような多くの欠点が発生した。
１．プローブが損耗しやすく、修理が容易でない：プローブカードは自動試験システムとＩＣチップ間に介在する精密なインタフェースカードであり、細微な各プローブはいずれも精密にその外表面に配列され、且つ全てのプローブのチップの真平面度及びチップから折り曲げ点の長さ、前端湾曲角度からチップの直線性等は、いずれも一定の標準規格を有する。ただし却って試験での不当な使用或いは正常使用の回数が一定量に達すると、プローブ構造上の損壊、例えばチップ長さ（ＴｉｐＬｅｎｇｔｈ）、アライメント（Ａｌｉｇｎｍｅｎｔ）、及び水平基準（Ｐｌａｎａｒｙ）に偏差を発生しやすく、ウエハーの試験に不良な影響を形成しやすい（第２点に述べる内容）、また、プローブの修理もまた容易でなく、専門の作業員、器具を必要とし、且つ修理の過程が冗長で煩瑣であり、修理後の構造品質も安定して維持されず、使用上の大きな欠点を形成する。
２．プローブの損壊が試験精度に影響を与える：定期的にプローブカードを修理しなければ試験歩留りの下降がもたらされ、これはプローブのチップの位置偏移或いはプローブの水平基準偏差、或いは基板及びプローブ自身の汚れによる。典型的なチップ位置偏移は接触の切断、短絡及びパッド周囲の酸化膜破壊を形成しうる。チップ水平基準偏移は高い接触抵抗、接触短絡、不一致のパラメータ測定、信号及び電源伝導失敗等をもたらす。プローブカードが汚染されている時、高接触抵抗、高いリーク電流、接触短絡、及び不良な信号と電流伝導現象が発生しうる。
３．プローブ構造の高密度化容易でない：周知のプローブカードはプローブがティルト角式の構造設計とされていることに制限されるため、使用時に上述の欠点を発生するのみならず、プローブ設置時の密度も有効に高めることができない。一般にパッドサイズは最少で７０μｍ以上で、且つ工程精密度の不断の進歩に伴い、パッドとパッド間のピッチもまた縮小されている。しかし、周知のプローブ構造は半導体工程の精密度アップに対応できない。 Please refer to FIG. According to a known technique, the plurality of probes 91 of the probe card 90 are distributed on the outer edge of the substrate 92, and one end of each probe 91 is soldered to the substrate 92, and the other end is fixed to the substrate 92 with an epoxy layer 93. In addition, when the edge of the end is bent at a predetermined angle to form a chip (Tip) 911 and the probe card 90 conducts a wafer conductivity test, the chip 911 is pierced into the oxide film of the wafer to conduct the conductivity test. To achieve the objectives. However, when such a known probe card is used for the test, many of the following defects occur due to the structural design failure.
1. Probes are prone to wear and not easy to repair: The probe card is a precision interface card between the automatic test system and the IC chip, and each fine probe is precisely arranged on its outer surface, and all The straightness of the tip of the probe, the length of the bending point from the tip, the linearity of the tip from the front end bending angle, etc. all have a certain standard. However, if the number of unjustified or normal use in the test reaches a certain amount, damage to the probe structure, such as tip length, alignment, and horizontal reference, will occur. It is easy to form, and it is easy to form a bad influence on the test of the wafer (the contents described in the second point). Also, the repair of the probe is not easy, and it requires a specialized worker and equipment, and the repair process is redundant. It is cumbersome and the structural quality after repair is not stably maintained, resulting in a major drawback in use.
2. Probe failure affects test accuracy: If the probe card is not repaired regularly, a decrease in test yield will result, which may be the displacement of the probe tip or the horizontal reference deviation of the probe, or the substrate and probe. Due to own dirt. Typical chip position shifts can form contact breaks, short circuits and oxide breakdown around the pad. Chip horizontal reference deviation results in high contact resistance, contact short circuit, mismatch parameter measurement, signal and power supply conduction failure, and so on. When the probe card is contaminated, high contact resistance, high leakage current, contact short circuit, and poor signal and current conduction phenomena can occur.
3. It is not easy to increase the density of the probe structure: the known probe card is limited to the fact that the probe has a tilt angle structure design. Can not be increased effectively. In general, the pad size is a minimum of 70 μm or more, and the pitch between pads is also reduced with the continuous progress of process precision. However, the well-known probe structure cannot cope with an increase in precision of the semiconductor process.

以上を鑑み、本発明は上述のプローブ構造を試験に使用する上での欠点を改善するため、新規な薄膜式ウエハー試験装置及びそのプローブ検出伝送構造を提供するものである。 In view of the above, the present invention provides a novel thin film wafer testing apparatus and its probe detection transmission structure in order to improve the drawbacks of using the above probe structure for testing.

本発明の主要な目的は、一種の薄膜式ウエハー試験装置及びそのプローブ検出伝送構造を提供することにあり、それは、ウエハー歩留り試験に用いられる試験装置であり、そのプローブカードのプローブ構造の設置は、強固で、摩損、偏移しにくく、且つ高密度化設置可能で、また導電伝送効率が良好で、安定性が良好であるものとする。 The main object of the present invention is to provide a kind of thin-film wafer test apparatus and its probe detection transmission structure, which is a test apparatus used for wafer yield test, and the installation of the probe structure of the probe card is It is assumed that it is strong, hard to wear and shift, can be installed in high density, has good conductivity transmission efficiency, and good stability.

本発明の別の目的は、ウエハー試験装置の組成構造を精巧とし、安定性を高め、摩損しにくくし、且つ部品交換或いは修理作業を簡便に時間がかからないようにすることにある。 Another object of the present invention is to refine the composition structure of the wafer testing apparatus, to improve stability, to prevent wear and to easily and easily take parts replacement or repair work.

請求項１の発明は、薄膜式ウエハー試験装置において、基板と緩衝接続装置、検出伝送装置、プローブカードを具え、
該基板には位置決め空間と複数のネジ孔が設けられ、
該緩衝接続装置は、該基板の上に螺子止めされる固定接続シートと、一端が該位置決め空間を通って該固定接続シートに螺子止めされる接続本体を具え、該接続本体と固定接続シートの間に緩衝部品が設けられ、接続本体と固定接続シートの間に緩衝空間が存在し、該検出伝送装置は伝送シートと伝送インタフェースを具え、該伝送シートは該基板の背面部分に固定され、それを貫通するように等ピッチで複数の検出弾性ピン孔が配列されて検出弾性ピンを収容し、該伝送インタフェースは該伝送シートの背面部分に固定されて隣り合う複数の伝送導線を具え、これら検出弾性ピンの一端が伝送導線に接触し、別端が基板の対応する外側面に圧接し、
該プローブカードは伝送インタフェースと接続本体の間に設けられ、その一つの外表面に複数のプローブが凸設され、
これにより、ウエハー歩留りの試験作業を正確に、安定させると共に、ウエハー試験装置の修理を簡便とし、且つ摩損しにいことを特徴とする、薄膜式ウエハー試験装置としている。
請求項２の発明は、請求項１記載の薄膜式ウエハー試験装置において、接続本体と固定接続シートが螺子止めされる時、その接合される端面間に所定空間が保留され、且つ該接続本体の端面に複数の弾性部品収容溝が設けられて緩衝部品の収容に供され、これら緩衝部品の別端が固定接続シートに圧接し、緩衝空間を形成することを特徴とする、薄膜式ウエハー試験装置としている。
請求項３の発明は、請求項１記載の薄膜式ウエハー試験装置において、接続本体外側の二つの相互に対応する部分にスライドレールが凸設され、線形ガイド部品が該スライドレールに嵌設されて所定行程のスライドを形成し、且つ、各線形ガイド部品の外側面に複数のガイド部品固定孔が設けられ、ネジが接続本体と固定接続シートを結合させると共に固定接続シート外側よりガイド部品固定孔内にねじ込まれ、ウエハー試験装置が試験を行なう時に接続本体が形成する緩衝移動の安定性が確保されることを特徴とする、薄膜式ウエハー試験装置としている。
請求項４の発明は、請求項１記載の薄膜式ウエハー試験装置において、緩衝接続装置が更に緩衝パッドと固定フレームを具え、該固定フレームの内側に貫通する緩衝パッド位置制限溝が設けられ、緩衝パッドがプローブカードと接続本体の間に置かれ、並びに該固定フレームの緩衝パッド位置制限溝に包囲されることで、正確に該プローブカードの位置が位置決めされることを特徴とする、薄膜式ウエハー試験装置としている。
請求項５の発明は、請求項１記載の薄膜式ウエハー試験装置において、伝送インタフェースが固定板により伝送シートの背面部分に位置決め、固定され、該固定板の内側より階段状の載置部が延伸され、固定板の外周の板面にネジの挿通と伝送シート背面への螺子止めに供される穿孔と、位置決め用の位置決め貫通孔が設けられ、該載置部が伝送インタフェースの外側板面にアライメント設置された後に結合固定され、該位置決め貫通孔が、固定板が伝送シートに固定されると同時に、該伝送シートの背面に凸設された位置決め柱と位置決め式の嵌挿結合を形成し、これにより伝送インタフェースが伝送シートに固定される時、各検出弾性ピンの端部の正確な伝送導線との接触が確保されることを特徴とする、薄膜式ウエハー試験装置としている。
請求項６の発明は、請求項１又は請求項５記載の薄膜式ウエハー試験装置において、伝送シートと固定板がプローブカードの形態に対応する矩形態様とされ、一体成形構造とされるか、或いは複数のブロック状部品が併合されてなることを特徴とする、薄膜式ウエハー試験装置としている。
請求項７の発明は、請求項１記載の薄膜式ウエハー試験装置において、伝送インタフェース内側を貫通しプローブカードの外周より小さいインタフェース設置溝が設けられ、該プローブカードの外周がインタフェース設置溝周囲の板面に当接するように固定されることで、プローブカードと伝送インタフェースが電気的に接続されることを特徴とする、薄膜式ウエハー試験装置としている。
請求項８の発明は、請求項１記載の薄膜式ウエハー試験装置において、基板の検出弾性ピンの一端と接触し検出に供される外表面に、凹円状の検出弾性ピン位置決めピン孔が形成されてこれら検出弾性ピンの端部が確実に基板と接触することを特徴とする、薄膜式ウエハー試験装置としている。
請求項９の発明は、ウエハー歩留り測定に用いられるウエハー試験装置を具え、該ウエハー試験装置にウエハーと接触して検出に供されるプローブカードが固定されている薄膜式ウエハー試験装置のプローブ検出伝送構造において、
該プローブカードは検出伝送装置によりウエハー試験装置に組付けられ、且つその一つの外表面にプローブが凸設され、
該検出伝送装置は伝送シートと伝送インタフェースを具え、該伝送シートを貫通するように等ピッチで複数の検出弾性ピン孔が配列されて検出弾性ピンを収容し、該伝送インタフェースは該伝送シートの背面部分に固定されて隣り合う複数の伝送導線を具え、該伝送インタフェースの内側にプローブカードの外周より小さいインタフェース設置溝が形成され、これら検出弾性ピン孔内の検出弾性ピンの一端が伝送導線に接触し、プローブカードはその外周が伝送インタフェースのインタフェース設置溝周囲の板面に被覆、固定され、これにより伝送インタフェースと電気的に接続され、
これにより、プローブカードのプローブがウエハーと接触し検出する時の検出伝送の正確度と安定性が向上され、並びに損耗頻度が減り、また、プローブ設置の密度と修理の簡便性が高められたことを特徴とする、薄膜式ウエハー試験装置のプローブ検出伝送構造としている。
請求項１０の発明は、請求項９記載の薄膜式ウエハー試験装置のプローブ検出伝送構造において、伝送インタフェースは固定板により該伝送シートの背面部分に位置決め、固定され、該固定板の内側に階段状の載置部が延設され、外周の板面に、ネジの挿通に供され並びに伝送シートの背面に螺子止めされる穿孔と、位置決め用の位置決め貫通孔が設けられ、該載置部は伝送インタフェースの外側板面のアライメント設置に供された後に結合固定され、これら位置決め貫通孔は固定板が伝送シートに螺子止めされるときに、該伝送シートの背面の対応部分に設けられた位置決め柱と位置決め式に嵌挿結合され、これにより伝送インタフェースが伝送シートに固定される時、各検出弾性ピンの端部が正確に伝送導線と接触することを特徴とする、薄膜式ウエハー試験装置のプローブ検出伝送構造としている。
請求項１１の発明は、請求項９又は請求項１０記載の薄膜式ウエハー試験装置のプローブ検出伝送構造において、伝送シート或いは固定板はプローブカードに対応する矩形態様を呈し、一体成形構造とされるか、複数のブロック状部品が併合されてなることを特徴とする、薄膜式ウエハー試験装置のプローブ検出伝送構造としている。
請求項１２の発明は、ウエハー歩留り測定に用いられるウエハー試験装置を具え、該ウエハー試験装置にウエハーと接触して検出に供されるプローブカードが固定されている薄膜式ウエハー試験装置のプローブ検出伝送構造において、
該プローブカードは検出伝送装置によりウエハー試験装置に組付けられ、且つその一つの外表面にプローブが凸設され、これにより、プローブカードのプローブとウエハーが接触、検出する時の検出伝送の正確度と安定性が向上され、並びに損耗頻度が減らされ、またプローブ設置の密度、及び修理の簡便性が増されたことを特徴とする、薄膜式ウエハー試験装置のプローブ検出伝送構造としている。
請求項１３の発明は、請求項１２記載の薄膜式ウエハー試験装置のプローブ検出伝送構造において、検出伝送装置が伝送シートと伝送インタフェースを具え、該伝送シートを貫通するように等ピッチで複数の検出弾性ピン孔が配列されて検出弾性ピンを収容し、該伝送インタフェースは該伝送シートの背面部分に固定されて隣り合う複数の伝送導線を具え、該伝送インタフェースの内側にプローブカードの外周より小さいインタフェース設置溝が形成され、これら検出弾性ピン孔内の検出弾性ピンの一端が伝送導線に接触し、プローブカードはその外周が伝送インタフェースのインタフェース設置溝周囲の板面に被覆、固定され、これにより伝送インタフェースと電気的に接続されたことを特徴とする、薄膜式ウエハー試験装置のプローブ検出伝送構造としている。
請求項１４の発明は、請求項１３記載の薄膜式ウエハー試験装置のプローブ検出伝送構造において、伝送インタフェースが固定板により伝送シートの背面部分に位置決め、固定され、該固定板の内側より階段状の載置部が延伸され、固定板の外周の板面にネジの挿通と伝送シート背面への螺子止めに供される穿孔と、位置決め用の位置決め貫通孔が設けられ、該載置部が伝送インタフェースの外側板面にアライメント設置された後に結合固定され、該位置決め貫通孔が、固定板が伝送シートに固定されると同時に、該伝送シートの背面に凸設された位置決め柱と位置決め式の嵌挿結合を形成し、これにより伝送インタフェースが伝送シートに固定される時、各検出弾性ピンの端部の正確な伝送導線との接触が確保されることを特徴とする、薄膜式ウエハー試験装置のプローブ検出伝送構造としている。 The invention of claim 1 is a thin film wafer testing apparatus comprising a substrate and a buffer connection device, a detection transmission device, and a probe card,
The substrate is provided with a positioning space and a plurality of screw holes,
The buffer connection device includes a fixed connection sheet screwed onto the substrate, and a connection body having one end screwed to the fixed connection sheet through the positioning space, and the connection body and the fixed connection sheet. A buffer part is provided between the connection body and the fixed connection sheet, and the detection transmission device includes a transmission sheet and a transmission interface, and the transmission sheet is fixed to the back portion of the substrate; A plurality of detection elastic pin holes are arranged at an equal pitch so as to pass through the housing, and the detection elastic pins are accommodated, and the transmission interface includes a plurality of adjacent transmission conductors fixed to the back portion of the transmission sheet, and these detections are detected. One end of the elastic pin is in contact with the transmission conductor, and the other end is in pressure contact with the corresponding outer surface of the substrate,
The probe card is provided between the transmission interface and the connection body, and a plurality of probes are provided on one outer surface of the probe card,
Thus, the thin film wafer test apparatus is characterized in that the wafer yield test operation is accurately and stabilized, the repair of the wafer test apparatus is simplified, and the wafer test apparatus is not easily worn out.
According to a second aspect of the present invention, in the thin film wafer testing apparatus according to the first aspect, when the connection main body and the fixed connection sheet are screwed together, a predetermined space is reserved between the end surfaces to be joined, and the connection main body A thin-film wafer testing apparatus, characterized in that a plurality of elastic component receiving grooves are provided on an end surface to receive buffer components, and the other ends of these buffer components are pressed against a fixed connection sheet to form a buffer space. It is said.
According to a third aspect of the present invention, in the thin film wafer testing apparatus according to the first aspect, a slide rail is protruded at two mutually corresponding portions outside the connection body, and a linear guide component is fitted on the slide rail. A slide of a predetermined stroke is formed, and a plurality of guide component fixing holes are provided on the outer surface of each linear guide component, and a screw connects the connection body and the fixed connection sheet, and from inside the fixed connection sheet to the guide component fixing hole. The thin film type wafer testing apparatus is characterized in that the stability of the buffer movement formed by the connection main body when the wafer testing apparatus performs a test is secured.
According to a fourth aspect of the present invention, in the thin film wafer testing apparatus according to the first aspect, the buffer connection device further includes a buffer pad and a fixed frame, and a buffer pad position limiting groove penetrating inside the fixed frame is provided. A thin film wafer characterized in that a pad is placed between a probe card and a connection body, and is surrounded by a buffer pad position limiting groove of the fixed frame, so that the position of the probe card is accurately positioned. It is a test device.
According to a fifth aspect of the present invention, in the thin film type wafer testing apparatus according to the first aspect, the transmission interface is positioned and fixed to the rear portion of the transmission sheet by the fixing plate, and the stepped mounting portion extends from the inside of the fixing plate. The outer peripheral plate surface of the fixed plate is provided with a hole for screw insertion and screwing to the back of the transmission sheet, and a positioning through hole for positioning, and the mounting portion is provided on the outer plate surface of the transmission interface. After the alignment is installed, it is coupled and fixed, and the positioning through hole is fixed to the transmission sheet, and at the same time, forms a positioning type insertion coupling with a positioning column protruding on the back surface of the transmission sheet, Thus, when the transmission interface is fixed to the transmission sheet, the contact of the end of each detection elastic pin with the accurate transmission conductor is ensured. That.
According to a sixth aspect of the present invention, in the thin film wafer testing apparatus according to the first or fifth aspect, the transmission sheet and the fixing plate have a rectangular shape corresponding to the shape of the probe card. A thin film wafer testing apparatus is characterized in that a plurality of block-like parts are merged.
According to a seventh aspect of the present invention, in the thin film wafer testing apparatus according to the first aspect, an interface installation groove that penetrates the inside of the transmission interface and is smaller than the outer periphery of the probe card is provided, and the outer periphery of the probe card is a plate around the interface installation groove. The thin-film wafer testing apparatus is characterized in that the probe card and the transmission interface are electrically connected by being fixed so as to contact the surface.
According to an eighth aspect of the present invention, in the thin film wafer testing apparatus according to the first aspect, a concave detection elastic pin positioning pin hole is formed on an outer surface which is in contact with one end of the detection elastic pin of the substrate and used for detection. Thus, the thin film type wafer testing apparatus is characterized in that the end portions of the detection elastic pins are surely in contact with the substrate.
The invention of claim 9 comprises a wafer test apparatus used for wafer yield measurement, and a probe detection transmission of a thin film type wafer test apparatus in which a probe card used for detection upon contact with the wafer is fixed to the wafer test apparatus. In structure
The probe card is assembled to a wafer testing device by a detection transmission device, and a probe is provided on one outer surface of the probe card,
The detection transmission device includes a transmission sheet and a transmission interface, and a plurality of detection elastic pin holes are arranged at an equal pitch so as to penetrate the transmission sheet to accommodate the detection elastic pins, and the transmission interface is provided on the rear surface of the transmission sheet. A plurality of adjacent transmission conductors fixed to the part are provided, and an interface installation groove smaller than the outer periphery of the probe card is formed inside the transmission interface, and one end of the detection elastic pin in the detection elastic pin hole contacts the transmission conductor. The outer circumference of the probe card is covered and fixed to the plate surface around the interface installation groove of the transmission interface, thereby being electrically connected to the transmission interface,
This improves the accuracy and stability of detection transmission when the probe of the probe card comes into contact with the wafer, reduces the frequency of wear, and increases the density of probe installation and the ease of repair. The probe detection transmission structure of the thin film wafer testing apparatus is characterized by the following.
According to a tenth aspect of the present invention, in the probe detection transmission structure of the thin film type wafer test apparatus according to the ninth aspect, the transmission interface is positioned and fixed to the back surface portion of the transmission sheet by a fixing plate, and is stepped inside the fixing plate. The mounting portion is extended, and the outer peripheral plate surface is provided with a perforation for screw insertion and screwed to the back surface of the transmission sheet, and a positioning through hole for positioning. The positioning through holes are joined and fixed after being provided for alignment of the outer plate surface of the interface, and the positioning through holes are positioned on corresponding portions on the back surface of the transmission sheet when the fixing plate is screwed to the transmission sheet. When the transmission interface is fixed to the transmission sheet, the end of each detection elastic pin accurately contacts with the transmission conductor. And a probe detection transmission structure of the thin-film type wafer testing apparatus.
According to an eleventh aspect of the present invention, in the probe detection transmission structure of the thin film type wafer test apparatus according to the ninth aspect or the tenth aspect, the transmission sheet or the fixing plate has a rectangular shape corresponding to the probe card, and has an integrally formed structure. Alternatively, the probe detection transmission structure of the thin film wafer test apparatus is characterized in that a plurality of block-like parts are merged.
According to a twelfth aspect of the present invention, there is provided a wafer test apparatus used for wafer yield measurement, and a probe detection transmission of a thin film type wafer test apparatus in which a probe card which is brought into contact with the wafer and used for detection is fixed to the wafer test apparatus. In structure
The probe card is assembled to a wafer testing apparatus by a detection transmission device, and a probe is provided on one outer surface of the probe card, so that the accuracy of detection transmission when the probe of the probe card and the wafer are in contact with each other and detected. The probe detection transmission structure of the thin-film wafer testing apparatus is characterized in that the stability is improved, the wear frequency is reduced, the density of probe installation and the ease of repair are increased.
A thirteenth aspect of the present invention is the probe detection transmission structure of the thin film type wafer test apparatus according to the twelfth aspect, wherein the detection transmission apparatus includes a transmission sheet and a transmission interface, and a plurality of detections are made at equal pitches so as to penetrate the transmission sheet. An elastic pin hole is arranged to accommodate the detection elastic pin, and the transmission interface includes a plurality of adjacent transmission conductors fixed to the rear portion of the transmission sheet, and an interface smaller than the outer periphery of the probe card inside the transmission interface An installation groove is formed, one end of the detection elastic pin in the detection elastic pin hole is in contact with the transmission conductor, and the outer periphery of the probe card is covered and fixed on the plate surface around the interface installation groove of the transmission interface, thereby transmitting. Probe detection of thin film wafer test equipment characterized by being electrically connected to the interface It is a transmission structure.
According to a fourteenth aspect of the present invention, in the probe detection transmission structure of the thin film type wafer test apparatus according to the thirteenth aspect, the transmission interface is positioned and fixed to the back surface portion of the transmission sheet by the fixing plate, and is stepped from the inside of the fixing plate. The mounting portion is extended, and a perforation for screw insertion and screwing to the back of the transmission sheet is provided on the outer peripheral plate surface of the fixed plate, and a positioning through hole for positioning is provided. The positioning through hole is fixed to the transmission sheet at the same time as the positioning plate is aligned with the outer plate surface of the transmission plate, and at the same time, a positioning column and a positioning type insertion insertion are provided on the rear surface of the transmission sheet. A thin film, characterized in that when the transmission interface is fixed to the transmission sheet, a contact is made with the correct transmission conductor at the end of each elastic detection pin. And a probe detection transmission structure of Formula wafer testing apparatus.

本発明は薄膜式ウエハー試験装置及びそのプローブ検出伝送構造を提供し、それは基板を具え、該基板に位置決め空間と複数のネジ孔が設けられ、緩衝接続装置及び検出伝送装置の螺子止めに供され、並びに該検出伝送装置によりプローブカードが組付けられ、該緩衝接続装置は接続本体と固定接続シートで構成され、且つ接続本体の外表面に複数の弾性部品収容溝が設けられ、複数の緩衝部品がそのなかに収容され、該接続本体と固定接続シートの間に緩衝空間が存在するものとされる。該検出伝送装置は伝送シートと伝送インタフェースで構成され、該伝送シートはそのベースの背側部分に固定され、それを貫通するように等ピッチで配列された複数の検出弾性ピン孔が形成されて検出弾性ピンがそのなかに収容され、該伝送インタフェースは固定板を利用して該伝送シートの背面部分に固定され、その外表面に隣り合う複数の伝送導線が設けられ、内側に該プローブカードの外周より小さい貫通するインタフェース設置溝が設けられ、該プローブカードの外周がインタフェース設置溝周囲の板面に当接するように固定されることで、プローブカードと伝送インタフェースが電気的に接続され、これら検出弾性ピンの一端がそれぞれ伝送導線に接触し、別端が該基板の対応する外端面に接触し、これにより、該プローブカードのプローブとウエハーが接触検出時に検出伝送の正確度と安定性が向上され、並びに損耗頻度が低減し、また、プローブ設置の密度と修理の簡便性が高められる。 The present invention provides a thin film type wafer testing apparatus and its probe detection transmission structure, which includes a substrate, the substrate is provided with a positioning space and a plurality of screw holes, and is used for screwing the buffer connection device and the detection transmission device. In addition, a probe card is assembled by the detection transmission device, the buffer connection device is composed of a connection main body and a fixed connection sheet, and a plurality of elastic component receiving grooves are provided on the outer surface of the connection main body, and a plurality of buffer components Is accommodated therein, and a buffer space exists between the connection body and the fixed connection sheet. The detection transmission device is composed of a transmission sheet and a transmission interface, and the transmission sheet is fixed to the back side portion of the base, and a plurality of detection elastic pin holes arranged at equal pitches are formed so as to penetrate the transmission sheet. A detection elastic pin is accommodated therein, the transmission interface is fixed to the back portion of the transmission sheet using a fixing plate, a plurality of adjacent transmission conductors are provided on the outer surface, and the probe card is provided inside. An interface installation groove that penetrates smaller than the outer periphery is provided, and the probe card and the transmission interface are electrically connected by fixing the probe card so that the outer periphery of the probe card contacts the plate surface around the interface installation groove. One end of each elastic pin is in contact with the transmission conductor, and the other end is in contact with the corresponding outer end surface of the substrate, whereby the probe card Accuracy and stability of detection transmission probe and the wafer is at the detection contact is improved, and wear the frequency is reduced, also, ease of repair and the density of probe installation is enhanced.

図２〜図６に示されるように、本発明の薄膜式ウエハー試験装置及びそのプローブ検出伝送構造は、基板１０、該基板１０に組付けられた緩衝接続装置２０と検出伝送装置３０、及び該検出伝送装置３０の内側に設けられたプローブカード４０を具えている。 As shown in FIG. 2 to FIG. 6, the thin film wafer testing apparatus and its probe detection / transmission structure of the present invention include a substrate 10, a buffer connection device 20 and a detection transmission device 30 assembled on the substrate 10, and A probe card 40 provided inside the detection transmission device 30 is provided.

該基板１０は幾何形状のプリント回路板とされ、それに貫通する位置決め空間１１と複数のネジ孔１２と位置決め孔１３が設けられ、これらネジ孔１２は大孔径の第１ネジ孔１２Ａと小孔径の第２ネジ孔１２Ｂを包含し、またこれら第２ネジ孔１２Ｂは位置決め孔１３と隣り合うように離間設置されている。 The substrate 10 is a printed circuit board having a geometric shape, and is provided with a positioning space 11, a plurality of screw holes 12 and a positioning hole 13 therethrough. The screw holes 12 have a first screw hole 12A having a large hole diameter and a small hole diameter. The second screw holes 12B are included, and the second screw holes 12B are spaced from each other so as to be adjacent to the positioning holes 13.

該緩衝接続装置２０は固定接続シート２１、接続本体２２、緩衝パッド２３及び固定フレーム２４で構成されている。そのうち、固定接続シート２１は略十字形を呈し、それなネジがその十字の四隅位置に挿通された後に第１ネジ孔１２Ａにねじ込まれることで、基板１０の上方に固定され、該接続本体２２は一端が基板１０下方より上向きに位置決め空間１１に挿通された後、位置決めネジ部品５１で固定接続シート２１の下方に固定され、且つ該接続本体２２の上端面に複数の弾性部品収容溝２２１が設けられ、弾性機能を具えた複数の緩衝部品２５がその内部に収容され、これら緩衝部品２５の別端は固定接続シート２１の対向する端面に当接し、これにより該接続本体２２と固定接続シート２１が螺子止めされる時、その相互に接続される端面間に緩衝空間Ｌが存在する。該緩衝パッド２３及び固定フレーム２４は接続本体２２の別端外端面に設けられ、該固定フレーム２４の内側面に貫通する緩衝パッド位置制限溝２４１が設けられ、それは緩衝パッド２３を収容し、また、その外周のフレームの二つの対向部分に、別にピン２４２が凸設され、固定フレーム２４が接続本体２２に螺子止めされる時、これらのピン２４２が接続本体２２の対応するピン孔２２２部分に挿通され、これにより正確に位置決めされる。 The buffer connection device 20 includes a fixed connection sheet 21, a connection main body 22, a buffer pad 23, and a fixed frame 24. Among them, the fixed connection sheet 21 has a substantially cross shape, and the screw is inserted into the first screw hole 12 </ b> A after being inserted into the four corner positions of the cross, so that the fixed connection sheet 21 is fixed above the substrate 10. After one end is inserted into the positioning space 11 upward from below the substrate 10, it is fixed below the fixed connection sheet 21 with a positioning screw component 51, and a plurality of elastic component receiving grooves 221 are formed on the upper end surface of the connection body 22. A plurality of shock-absorbing parts 25 provided with an elastic function are accommodated therein, and the other ends of these shock-absorbing parts 25 abut against the opposing end surfaces of the fixed connection sheet 21, whereby the connection body 22 and the fixed connection sheet are provided. When 21 is screwed, a buffer space L exists between the end faces connected to each other. The buffer pad 23 and the fixing frame 24 are provided on the outer end surface of the connecting body 22 at the other end, and a buffer pad position limiting groove 241 penetrating the inner side surface of the fixing frame 24 is provided. When the fixed frame 24 is screwed to the connection main body 22 separately on the two opposing portions of the outer peripheral frame, these pins 242 are inserted into the corresponding pin hole 222 portions of the connection main body 22. Inserted and thereby accurately positioned.

このほか、接続本体２２の二つの対応する外側にスライドレール２２３が設けられ、各スライドレール２２３に線形ガイド部品２６が設けられ、該線形ガイド部品２６はスライドレール２２３上で所定行程のスライドを行ない、且つ各線形ガイド部品２６の外側面に複数のガイド部品固定孔２６１が設けられ、ネジ５２が接続本体２２と固定接続シート２１を固定する時、ネジ５２が固定接続シート２１の外側の対応する貫通孔２１１を通りガイド部品固定孔２６１にねじ込まれ、これにより接続本体の、ウエハー試験装置の試験時の緩衝移動の安定性が確保される。 In addition, slide rails 223 are provided on two corresponding outer sides of the connection body 22, and linear guide parts 26 are provided on the slide rails 223, and the linear guide parts 26 slide on the slide rails 223 for a predetermined stroke. In addition, when a plurality of guide component fixing holes 261 are provided on the outer surface of each linear guide component 26 and the screw 52 fixes the connection main body 22 and the fixed connection sheet 21, the screw 52 corresponds to the outside of the fixed connection sheet 21. By passing through the through hole 211 and screwed into the guide component fixing hole 261, the stability of the buffer movement of the connection main body during the test of the wafer test apparatus is ensured.

該検出伝送装置３０は該基板１０の背面部分に固定され、少なくとも伝送シート３１と伝送インタフェース３２で構成されている。 The detection transmission device 30 is fixed to the back surface portion of the substrate 10 and includes at least a transmission sheet 31 and a transmission interface 32.

そのうち、伝送シート３１は該基板１０の第２ネジ孔１２Ｂ部分に螺子止めされ、その上面に貫通する複数の検出弾性ピン孔３１１と複数の位置決めロッド孔３１２が等ピッチで配列され、各検出弾性ピン孔３１１内に弾力と導電伝送機能を具えた検出弾性ピン３３が収容され、且つこれらの列をなす検出弾性ピン孔３１１はウエハー試験の必要により、単列或いは二列以上を以て設置され、これによりプローブカード４０のプローブ４１の設置密度が増され、ウエハー試験の精密度が向上される。また、伝送シート３１が基板１０の第２ネジ孔１２Ｂに螺子止めされる時、それに凸設された位置決めロッド３１２が該基板１０の位置決め孔１３内に挿入されることで、正確に位置決めされる。 Among them, the transmission sheet 31 is screwed to the second screw hole 12B portion of the substrate 10, and a plurality of detection elastic pin holes 311 and a plurality of positioning rod holes 312 penetrating the upper surface thereof are arranged at an equal pitch. The detection elastic pins 33 having elasticity and conductive transmission function are accommodated in the pin holes 311 and the detection elastic pin holes 311 forming these rows are arranged in a single row or two or more rows depending on the necessity of the wafer test. This increases the installation density of the probes 41 of the probe card 40 and improves the precision of the wafer test. In addition, when the transmission sheet 31 is screwed into the second screw hole 12B of the substrate 10, the positioning rod 312 protruding from the transmission sheet 31 is inserted into the positioning hole 13 of the substrate 10 to be accurately positioned. .

該伝送インタフェース３２は該伝送シート３１の背面部分に固定され、その該伝送シート３１に対向する外表面に複数の隣り合う伝送導線３２１が設けられ、且つ内側面にプローブカード４０の外周よりやや小さいインタフェース設置溝３２２が形成され、該インタフェース設置溝３２２はプローブカード４０の設置に供される。各伝送導線３２１はそれぞれが検出弾性ピン３３の一端に接触し、且つこれら検出弾性ピン３３の別端は基板１０の対向する外側面に圧接する。ただし、該検出弾性ピン３３が確実に安定して基板１０と接触するように、該基板１０の対向する外表面には複数の凹円状の検出弾性ピン位置決め孔１４が形成され、これら検出弾性ピン３３の端部の位置決めに供される。 The transmission interface 32 is fixed to the back surface portion of the transmission sheet 31, a plurality of adjacent transmission conductors 321 are provided on the outer surface facing the transmission sheet 31, and the inner surface is slightly smaller than the outer periphery of the probe card 40. An interface installation groove 322 is formed, and the interface installation groove 322 is used for installation of the probe card 40. Each transmission lead 321 is in contact with one end of the detection elastic pin 33, and the other end of the detection elastic pin 33 is in pressure contact with the opposing outer surface of the substrate 10. However, a plurality of concave circular detection elastic pin positioning holes 14 are formed on the opposing outer surface of the substrate 10 so that the detection elastic pins 33 come into contact with the substrate 10 reliably and stably. This is used for positioning the end of the pin 33.

また、該伝送インタフェース３２は固定板３４により該伝送シート３１の背面部分に位置決め、固定され、該固定板３４の内側に階段状の載置部３４１が延設され、外周の板面に、ネジの挿通に供され並びに伝送シートの背面に螺子止めされる穿孔３４２と、位置決め用の位置決め貫通孔３４３が設けられる。該載置部３４１は伝送インタフェース３１の外側板面のアライメント設置に供された後に結合固定され、これら位置決め貫通孔３４３は固定板３４が伝送シート３２に螺子止めされるときに、該伝送シート３１の背面の対応部分に設けられた位置決め柱３１３と位置決め式に嵌挿結合され、これにより伝送インタフェース３２が伝送シート３１に固定される時、各検出弾性ピン３３の端部が正確に伝送導線３２１と接触する。 Further, the transmission interface 32 is positioned and fixed to the back surface portion of the transmission sheet 31 by a fixing plate 34, a stepped mounting portion 341 is extended inside the fixing plate 34, and a screw is provided on the outer peripheral plate surface. And a positioning through-hole 343 for positioning are provided. The mounting portion 341 is coupled and fixed after being provided for alignment of the outer plate surface of the transmission interface 31, and the positioning through holes 343 are used when the fixing plate 34 is screwed to the transmission sheet 32. When the transmission interface 32 is fixed to the transmission sheet 31, the end portions of the detection elastic pins 33 are accurately connected to the transmission conductors 321. In contact with.

次に、更に説明すると、本発明のウエハー試験装置の上述の伝送シート３１及び固定板３４は構造設計上、プローブカード４０に対応する矩形態様を呈するが、設計の違い或いは組立要求により、該伝送シート３１と固定板３４は構造設計上、一体成形構造とされるほか、複数のブロック状部品が併合されてなる。該プローブカード４０は直接ウエハーと接触する部品とされ、それは該伝送インタフェース３２と接続本体２２の間に設けられ、緩衝パッド２３が該プローブカード４０と接続本体２２の外側面の間に置かれ、該プローブカード４０は並びに固定フレーム２４の緩衝パッド位置制限溝２４１により囲まれ、正確にプローブカード４０の位置が固定される。該プローブカード４０の外側は、該伝送インタフェース３２に固定されたインタフェース設置溝３２２の周囲板面部分に被覆、固定され、プローブカード４０と伝送インタフェース３２が電気的に接続される。該プローブカード４０の最も主要な特徴は、その一つの外表面に設置された複数のプローブ４１が直立状の突出構造とされ、これらプローブ４１とウエハーが接触し検出が行なわれる時、抵抗値が小さく、摩損或いは偏移を発生しにくく、また、プローブ４１が高密度で設置可能であることである。 Next, in further detail, the transmission sheet 31 and the fixing plate 34 of the wafer test apparatus of the present invention have a rectangular shape corresponding to the probe card 40 in structural design. The seat 31 and the fixing plate 34 are integrally formed in terms of structural design, and a plurality of block-like parts are combined. The probe card 40 is a component that directly contacts the wafer, which is provided between the transmission interface 32 and the connection body 22, and a buffer pad 23 is placed between the probe card 40 and the outer surface of the connection body 22, The probe card 40 is surrounded by the buffer pad position limiting groove 241 of the fixed frame 24, and the position of the probe card 40 is fixed accurately. The outside of the probe card 40 is covered and fixed to the peripheral plate surface portion of the interface installation groove 322 fixed to the transmission interface 32, and the probe card 40 and the transmission interface 32 are electrically connected. The most important feature of the probe card 40 is that a plurality of probes 41 installed on one outer surface of the probe card 40 have an upright protruding structure, and when the probe 41 and the wafer come into contact with each other and the detection is performed, the resistance value is increased. It is small and hardly causes wear or deviation, and the probe 41 can be installed at a high density.

これにより、上述の構成により、ウエハー歩留りの試験作業が更に正確に安定して行なわれ、また、ウエハー試験装置の修理もまた非常に簡便で時間と手間が節約される。以下に本発明のプローブ試験プロセスと使用の特徴について述べる。 Accordingly, the wafer yield test operation is performed more accurately and stably by the above-described configuration, and repair of the wafer test apparatus is also very simple and saves time and labor. The features of the probe test process and use of the present invention are described below.

図５、６に示されるように、本発明のウエハー試験装置でウエハー歩留りの試験を行なう時、その導電試験のプロセスは以下のとおりである。即ち、ウエハー６０を制御台７０上に置き、プローブカード４０のプローブ４１とウエハーを接触させ、ウエハー自身の導電性に傷がない時は、各プローブ４１がウエハーの接触により得る検出データは、いずれもプローブ４１に接触する伝送導線３２１より各検出弾性ピン３３及び基板１０を通り、最後に制御台７０に送られ、並びにスクリーン７１により試験結果が表示される。同時に、これらプローブ４１とウエハーが接触する時、プローブ４１はウエハーの酸化膜に挿通されなければならず、本試験装置はそれに設置された緩衝空間Ｌと線形ガイド部品２６のガイド設計により、十分にプローブ４１とウエハーの接触時の安定性と作動の確実性が確保される。このような装置でウエハー歩留り試験の目的を達成するメリットは試験効果が安定し、損耗しにくいこと、及び、使用者自身が自分で迅速に、簡単に修理でき、専門の作業員に頼む必要がないこと、且つ、実際の応用上、基板１０と緩衝接続装置２０が公用部品とされ、使用者は検出伝送装置３０とプローブカード４０を交換することで異なる試験要求を達成できること、プローブが高密度化設計可能で損傷しにくいこと、及び、信号周波数幅を大幅に増加できること、等であり、最終的は製造、生産コストを減らせ、並びに試験品質の安定性を高めることができる。 As shown in FIGS. 5 and 6, when a wafer yield test is performed with the wafer test apparatus of the present invention, the process of the conductivity test is as follows. That is, when the wafer 60 is placed on the control table 70 and the probe 41 of the probe card 40 is brought into contact with the wafer, and the conductivity of the wafer itself is not damaged, the detection data obtained by the contact of the wafer with each probe 41 is Also, the transmission lead wire 321 contacting the probe 41 passes through each detection elastic pin 33 and the substrate 10, and finally is sent to the control table 70, and the test result is displayed on the screen 71. At the same time, when these probes 41 and the wafer come into contact with each other, the probe 41 must be inserted into the oxide film of the wafer, and the test apparatus is sufficiently equipped with the buffer space L installed therein and the guide design of the linear guide component 26. Stability at the time of contact between the probe 41 and the wafer and the certainty of operation are ensured. The merit of achieving the purpose of wafer yield test with such an apparatus is that the test effect is stable and wear-out is difficult, and the user himself / herself can quickly and easily repair it, and it is necessary to ask a specialized worker. In actual applications, the board 10 and the buffer connection device 20 are used as public parts, and the user can achieve different test requirements by exchanging the detection transmission device 30 and the probe card 40, and the probe has a high density. In other words, it is possible to reduce the manufacturing and production costs, and increase the stability of the test quality.

周知のプローブカードのプローブ構造表示図である。It is a probe structure display figure of a known probe card. 本発明の立体組合せ外観図である。It is a three-dimensional combination external view of the present invention. 本発明の立体分解図である。It is a three-dimensional exploded view of the present invention. 本発明の組合せ断面図である。It is combination sectional drawing of this invention. 本発明を制御台に組み合わせた使用表示図である。It is a use display figure which combined the present invention with a control stand. 本発明のウエハー歩留り試験作業の表示図である。It is a display figure of the wafer yield test work of the present invention.

Explanation of symbols

１０基板１１位置決め空間
１２ネジ孔１２Ａ第１ネジ孔
１２Ｂ第２ネジ孔１３位置決め孔
１４検出弾性ピン位置決め孔
２０緩衝接続装置２１固定接続シート
２１１貫通孔２２接続本体
２２１弾性部品収容溝２２２ピン孔
２２３スライドレール２３緩衝パッド
２４固定フレーム
２４１緩衝パッド位置制限溝
２４２ピン２５緩衝部品
２６線形ガイド部品２６１カイド部品固定孔
３０検出伝送装置３１伝送シート
３１１検出弾性ピン孔３１２位置決めロッド
３１３位置決め柱３２伝送インタフェース
３２１伝送導線３２２インフェース設置溝
３３検出弾性ピン３４固定板
３４１載置部３４２穿孔
３４３位置決め貫通孔４０プローブカード
４１プローブ３５１位置決めネジ部品
５２ネジ６０ウエハー
７０制御台７１スクリーン
Ｌ緩衝空間
DESCRIPTION OF SYMBOLS 10 Board | substrate 11 Positioning space 12 Screw hole 12A 1st screw hole 12B 2nd screw hole 13 Positioning hole 14 Detection elastic pin positioning hole 20 Buffer connection apparatus 21 Fixed connection sheet 211 Through-hole 22 Connection body 221 Elastic component accommodation groove 222 Pin hole 223 Slide rail 23 Buffer pad 24 Fixed frame 241 Buffer pad position limiting groove 242 Pin 25 Buffer part 26 Linear guide part 261 Guide part fixing hole 30 Detection transmission device 31 Transmission sheet 311 Detection elastic pin hole 312 Positioning rod 313 Positioning column 32 Transmission interface 321 Transmission lead 322 In-face installation groove 33 Detection elastic pin 34 Fixing plate 341 Placement part 342 Drilling 343 Positioning through hole 40 Probe card 41 Probe 351 Positioning screw component 52 Screw 60 Wafer 70 Control Stand 71 Screen L Buffer space

Claims

In the thin film wafer testing device, it comprises a substrate, buffer connection device, detection transmission device, probe card,
The substrate is provided with a positioning space and a plurality of screw holes,
The buffer connection device includes a fixed connection sheet screwed onto the substrate, and a connection body having one end screwed to the fixed connection sheet through the positioning space, and the connection body and the fixed connection sheet. A buffer part is provided between the connection body and the fixed connection sheet, and the detection transmission device includes a transmission sheet and a transmission interface, and the transmission sheet is fixed to the back portion of the substrate; A plurality of detection elastic pin holes are arranged at an equal pitch so as to pass through the housing, and the detection elastic pins are accommodated, and the transmission interface includes a plurality of adjacent transmission conductors fixed to the back portion of the transmission sheet, and these detections are detected. One end of the elastic pin is in contact with the transmission conductor, and the other end is in pressure contact with the corresponding outer surface of the substrate,
The probe card is provided between the transmission interface and the connection body, and a plurality of probes are provided on one outer surface of the probe card,
Thus, a thin film type wafer testing apparatus characterized in that the wafer yield test operation is accurately and stabilized, the wafer testing apparatus is easily repaired, and is not easily worn out.

2. The thin film wafer testing apparatus according to claim 1, wherein when the connection body and the fixed connection sheet are screwed together, a predetermined space is reserved between the joined end faces, and a plurality of elastic parts are accommodated on the end face of the connection body. A thin-film wafer testing apparatus, characterized in that a groove is provided to accommodate a shock-absorbing part, and another end of the shock-absorbing part is pressed against the fixed connection sheet to form a shock-absorbing space.

2. The thin film wafer testing apparatus according to claim 1, wherein a slide rail is protruded at two mutually corresponding portions on the outside of the connection body, and a linear guide component is fitted on the slide rail to form a slide of a predetermined stroke. In addition, a plurality of guide component fixing holes are provided on the outer surface of each linear guide component, and a screw joins the connection body and the fixed connection sheet and is screwed into the guide component fixing hole from the outer side of the fixed connection sheet. A thin film wafer testing apparatus characterized in that the stability of the buffer movement formed by the connection body when the test is performed is ensured.

2. The thin film wafer testing apparatus according to claim 1, wherein the buffer connection device further includes a buffer pad and a fixed frame, and a buffer pad position limiting groove is provided inside the fixed frame, and the buffer pad is connected to the probe card and the connection body. The thin film wafer testing apparatus is characterized in that the probe card is accurately positioned by being placed between the two and being surrounded by a buffer pad position limiting groove of the fixed frame.

2. The thin film wafer testing apparatus according to claim 1, wherein the transmission interface is positioned and fixed to the back surface portion of the transmission sheet by a fixed plate, a stepped mounting portion is extended from the inside of the fixed plate, and the outer periphery of the fixed plate is Perforations used for screw insertion and screwing to the back of the transmission sheet on the plate surface and positioning through holes for positioning are provided, and the mounting part is aligned and installed on the outer plate surface of the transmission interface, and then fixed by coupling. The positioning through-hole forms a positioning type insertion coupling with a positioning column projecting on the back surface of the transmission sheet at the same time that the fixing plate is fixed to the transmission sheet. A thin film type wafer testing apparatus characterized in that, when secured to the end, the contact of the end of each detection elastic pin with an accurate transmission line is ensured.

6. The thin film wafer testing apparatus according to claim 1 or 5, wherein the transmission sheet and the fixing plate have a rectangular shape corresponding to the shape of the probe card, and have an integrally formed structure, or a plurality of block-like parts are merged. A thin film type wafer testing apparatus characterized by being made.

2. The thin film wafer testing apparatus according to claim 1, wherein an interface installation groove that penetrates the inside of the transmission interface and is smaller than the outer periphery of the probe card is provided, and is fixed so that the outer periphery of the probe card abuts a plate surface around the interface installation groove. By doing so, the probe card and the transmission interface are electrically connected to each other, and the thin film wafer testing apparatus.

2. The thin film wafer testing apparatus according to claim 1, wherein a concave detection elastic pin positioning pin hole is formed on an outer surface which is in contact with one end of the detection elastic pin of the substrate and used for detection. A thin film wafer testing apparatus characterized in that the end portion is in contact with the substrate with certainty.

In a probe detection transmission structure of a thin film type wafer test apparatus comprising a wafer test apparatus used for wafer yield measurement, wherein a probe card used for detection upon contact with the wafer is fixed to the wafer test apparatus.
The probe card is assembled to a wafer testing device by a detection transmission device, and a probe is provided on one outer surface of the probe card,
The detection transmission device includes a transmission sheet and a transmission interface, and a plurality of detection elastic pin holes are arranged at an equal pitch so as to penetrate the transmission sheet to accommodate the detection elastic pins, and the transmission interface is provided on the rear surface of the transmission sheet. A plurality of adjacent transmission conductors fixed to the part are provided, and an interface installation groove smaller than the outer periphery of the probe card is formed inside the transmission interface, and one end of the detection elastic pin in the detection elastic pin hole contacts the transmission conductor. The outer circumference of the probe card is covered and fixed to the plate surface around the interface installation groove of the transmission interface, thereby being electrically connected to the transmission interface,
This improves the accuracy and stability of detection transmission when the probe of the probe card comes into contact with the wafer, reduces the frequency of wear, and increases the density of probe installation and the ease of repair. A probe detection transmission structure for a thin-film wafer testing apparatus.

10. The probe detection and transmission structure of a thin film wafer testing apparatus according to claim 9, wherein the transmission interface is positioned and fixed to the back surface portion of the transmission sheet by a fixed plate, and a stepped mounting portion extends inside the fixed plate. The outer peripheral plate surface is provided with a perforation for screw insertion and screwed to the back surface of the transmission sheet, and a positioning through hole for positioning. The mounting portion is aligned with the outer plate surface of the transmission interface. These positioning through-holes are inserted and connected in a positioning manner with positioning columns provided at corresponding portions on the back of the transmission sheet when the fixing plate is screwed to the transmission sheet. Thin film wafer test, characterized in that when the transmission interface is fixed to the transmission sheet, the end of each detection elastic pin accurately contacts the transmission lead Probe detection transmission structure of location.

11. The probe detection transmission structure of the thin film type wafer testing apparatus according to claim 9 or 10, wherein the transmission sheet or the fixing plate has a rectangular shape corresponding to the probe card and is formed as an integral molding structure or a plurality of block-shaped parts A probe detection transmission structure of a thin film wafer testing apparatus, characterized in that

In a probe detection transmission structure of a thin film type wafer test apparatus comprising a wafer test apparatus used for wafer yield measurement, wherein a probe card used for detection upon contact with the wafer is fixed to the wafer test apparatus.
The probe card is assembled to a wafer testing apparatus by a detection transmission device, and a probe is provided on one outer surface of the probe card, so that the accuracy of detection transmission when the probe of the probe card and the wafer are in contact with each other and detected. A probe detection transmission structure for a thin-film wafer testing apparatus characterized in that stability is improved, wear frequency is reduced, probe installation density and repair ease are increased.

13. The probe detection transmission structure of a thin film wafer testing apparatus according to claim 12, wherein the detection transmission apparatus comprises a transmission sheet and a transmission interface, and a plurality of detection elastic pin holes are arranged at an equal pitch so as to penetrate the transmission sheet. A detection elastic pin is accommodated, and the transmission interface includes a plurality of adjacent transmission conductors fixed to the rear portion of the transmission sheet, and an interface installation groove smaller than the outer periphery of the probe card is formed inside the transmission interface. One end of the detection elastic pin in the detection elastic pin hole comes into contact with the transmission lead, and the outer periphery of the probe card is covered and fixed on the plate surface around the interface installation groove of the transmission interface, thereby being electrically connected to the transmission interface. A probe detection transmission structure for a thin film wafer testing apparatus.

In the probe detection transmission structure of the thin film type wafer test apparatus according to claim 13, the transmission interface is positioned and fixed to the back surface portion of the transmission sheet by the fixing plate, and the stepped mounting portion is extended from the inside of the fixing plate, Perforations used for screw insertion and screwing to the back of the transmission sheet, and positioning through holes for positioning are provided on the outer peripheral plate surface of the fixed plate, and the mounting portion is aligned on the outer plate surface of the transmission interface. The positioning through-holes are fixed to the transmission sheet at the same time as the fixing plate is fixed to the transmission sheet. A thin film wafer testing apparatus characterized in that when the transmission interface is fixed to the transmission sheet, the contact of the end of each detection elastic pin with the accurate transmission lead is ensured. Probe detection transmission structure.