JP2006179733A - Multilayer wiring board and its manufacturing method - Google Patents

Multilayer wiring board and its manufacturing method Download PDF

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JP2006179733A
JP2006179733A JP2004372520A JP2004372520A JP2006179733A JP 2006179733 A JP2006179733 A JP 2006179733A JP 2004372520 A JP2004372520 A JP 2004372520A JP 2004372520 A JP2004372520 A JP 2004372520A JP 2006179733 A JP2006179733 A JP 2006179733A
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base material
layer side
insulating adhesive
adhesive layer
wiring board
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Hiroyuki Sonoda
博行 園田
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Casio Computer Co Ltd
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Casio Computer Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

<P>PROBLEM TO BE SOLVED: To form simply a dig-out which an electronic part, such as a semiconductor chip, etc. is inserted, and an improvement in productivity is aimed at, and to enable it to carry the electronic part in the dig-out part good. <P>SOLUTION: Since the dig-out 27 which the semiconductor chip 26 inserts in the second substrate 21 is formed and this second substrate 21 is located on the first substrate 20, the hollowed-out 27 can be formed beforehand in the second substrate 21. For this sake, since the hollowed-out 27 can be formed in the second substrate 21 simply and corrected without using a special cutting unit, the productivity can be improved. Moreover, since a building-up part 28 is formed in the shape of a frame along with the peripheral side of a chip loading region E on the first substrate 20, an insulating adhesive layer 29 is formed in the first substrate 20 located in the peripheral side of this building-up part 28 and the first and second substrates 20 and 21 are joined, the entering of the insulating adhesive layer 29 into the hollowed-out 27 can be stopped by the building-up part 28 at the time of the bonding. Consequently, the semiconductor chip 26 can be carried in the hollowed-out 27 good. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

この発明は、電子腕時計などの電子機器に用いられる多層配線基板およびその製造方法に関する。   The present invention relates to a multilayer wiring board used for an electronic device such as an electronic wristwatch and a method for manufacturing the same.

電子腕時計などの電子機器においては、小型化、薄型化を図るために、電子部品を高密度に実装する多層配線基板が用いられている。このような多層配線基板は、表裏面に配線をパターン形成した複数の基材をそれぞれ絶縁性接着剤層によって順次積層し、この積層された基材の最上面や最下面に半導体チップなどの電子部品を搭載した構成になっている。この多層配線基板では、その最上面や最下面に半導体チップなどの電子部品を搭載しているため、基板全体の厚みが厚くなるという問題がある。   In an electronic device such as an electronic wristwatch, a multilayer wiring board on which electronic components are mounted at a high density is used in order to reduce the size and thickness. In such a multilayer wiring board, a plurality of substrates having wiring patterns formed on the front and back surfaces are sequentially laminated by an insulating adhesive layer, and an electronic circuit such as a semiconductor chip is formed on the uppermost surface and the lowermost surface of the laminated substrates. It has a configuration with parts mounted. In this multilayer wiring board, since electronic components such as semiconductor chips are mounted on the uppermost surface and the lowermost surface, there is a problem that the thickness of the entire substrate becomes thick.

そこで、このような問題を回避するため、従来の多層配線基板では、特許文献1に記載されているように、複数の基材が積層された内部側に半導体チップなどの電子部品を組み込むことにより、基板全体の薄型化を図っている。このような特許文献1の多層配線基板は、表裏面に配線をパターン形成した複数の基材をそれぞれ絶縁性接着剤層によって積層させた後、高周波スピンドルを用いて外層の基材を削り出すことにより、内層側の基材に形成された配線を露呈させ、この削り出された凹部内に電子部品を搭載している。
特開2003−179180号公報
Therefore, in order to avoid such a problem, in the conventional multilayer wiring board, as described in Patent Document 1, an electronic component such as a semiconductor chip is incorporated on the inner side where a plurality of base materials are stacked. The whole substrate is made thinner. In such a multilayer wiring board of Patent Document 1, a plurality of base materials having wiring patterns formed on the front and back surfaces are laminated with an insulating adhesive layer, respectively, and then the outer layer base material is cut out using a high frequency spindle. Thus, the wiring formed on the base material on the inner layer side is exposed, and the electronic component is mounted in the cut-out recess.
JP 2003-179180 A

しかしながら、このような従来の多層配線基板では、表裏面に配線が形成された複数の基材を貼り合わせて積層させた後に、外層の基材を削り出して内層側の基材に形成された配線を傷付けずに露呈させなければならないため、高い切削技術が要求される。すなわち、このような削り出し作業は、内層側の基材に設けられた配線上の複数点を予め測定し、その測定した各点の高さ方向の位置関係を計算して仮想面を算出し、この仮想面に沿って切削刃を制御しながら削り出す必要がある。このため、削り出し作業が煩雑で面倒であるばかりか、削り出し作業に時間がかかるため、生産性が悪いという問題がある。   However, in such a conventional multilayer wiring board, a plurality of base materials having wiring formed on the front and back surfaces are laminated and laminated, and then the outer layer base material is cut out to be formed on the inner layer side base material. Since the wiring must be exposed without being damaged, a high cutting technique is required. That is, in such a cutting work, a plurality of points on the wiring provided on the base material on the inner layer side are measured in advance, and the positional relationship in the height direction of each measured point is calculated to calculate a virtual surface. Then, it is necessary to cut out along the virtual plane while controlling the cutting blade. For this reason, there is a problem that not only the cutting operation is complicated and troublesome, but also the cutting operation takes time, resulting in poor productivity.

この発明が解決しようとする課題は、半導体チップなどの電子部品が挿入するくり抜き部を簡単に形成して生産性の向上を図り、且つくり抜き部に電子部品を良好に搭載することができる多層配線基板およびその製造方法を提供することである。   The problem to be solved by the present invention is to provide a multilayer wiring that can easily form a hollow portion into which an electronic component such as a semiconductor chip is inserted to improve productivity and can be mounted on the hollow portion satisfactorily. It is to provide a substrate and a manufacturing method thereof.

この発明は、上記課題を解決するために、次のような構成要素を備えている。
なお、各構成要素には、後述する各実施形態の項で説明される各要素に付されている図面の参照番号などを括弧と共に付す。
In order to solve the above problems, the present invention includes the following components.
In addition, the reference numerals of the drawings attached to the respective elements described in the section of each embodiment described later are attached to the respective constituent elements together with parentheses.

請求項1に記載の発明は、図1〜図19に示すように、表裏面に配線(第1〜第4配線22〜25)がそれぞれパターン形成された複数の基材(第1、第2基材20、21)が上下に積層され、この積層された内部に電子部品(半導体チップ26、45、48、50)が搭載された多層配線基板であって、
上層側に位置する前記基材(第2基材21)に前記電子部品が挿入するくり抜き部(27)が形成され、この上層側の基材が配置される下層側の前記基材(第1基材20)の上面に、前記電子部品が配置される部品搭載領域(チップ搭載領域E)の外周を囲う枠状の肉盛部(28、41)が形成され、この肉盛部の外周側に位置する部分の前記下層側の基材とこの部分に対向する前記上層側の基材との一方に絶縁性接着剤層(29)が設けられ、この絶縁性接着剤層によって前記下層側の基材と前記上層側の基材とが接合され、この状態で前記くり抜き部に前記電子部品が挿入されて搭載されていることを特徴とする多層配線基板(13、40)である。
As shown in FIGS. 1 to 19, the invention according to claim 1 is a plurality of base materials (first and second) in which wirings (first to fourth wirings 22 to 25) are respectively formed on the front and back surfaces. A multilayer wiring board in which base materials 20 and 21) are stacked one above the other and electronic components (semiconductor chips 26, 45, 48, and 50) are mounted inside the stacked layers;
A cutout portion (27) into which the electronic component is inserted is formed in the base material (second base material 21) located on the upper layer side, and the lower base material (first surface) on which the upper layer base material is disposed. A frame-like built-up portion (28, 41) surrounding the outer periphery of the component mounting region (chip mounting region E) on which the electronic component is arranged is formed on the upper surface of the base material 20), and the outer peripheral side of this built-up portion An insulating adhesive layer (29) is provided on one of the base material on the lower layer side of the portion located on the upper side and the base material on the upper layer side facing this portion, and the lower side of the lower layer side is provided by this insulating adhesive layer. The multilayer wiring board (13, 40) is characterized in that a base material and the base material on the upper layer side are joined and the electronic component is inserted and mounted in the cut-out portion in this state.

請求項2に記載の発明は、図2〜図9、図17〜図19に示すように、前記肉盛部(28)が、前記絶縁性接着剤層(29)の厚みよりも厚く形成されていることを特徴とする請求項1に記載の多層配線基板である。   In the invention according to claim 2, as shown in FIGS. 2 to 9 and FIGS. 17 to 19, the build-up portion (28) is formed thicker than the thickness of the insulating adhesive layer (29). The multilayer wiring board according to claim 1, wherein the multilayer wiring board is provided.

請求項3に記載の発明は、図2〜図9、図17〜図19に示すように、前記くり抜き部(27)が、前記肉盛部(28)を前記電子部品(半導体チップ26、45、48、50)と共に挿入する大きさに形成されていることを特徴とする請求項2に記載の多層配線基板である。   As shown in FIG. 2 to FIG. 9 and FIG. 17 to FIG. 19, the cut-out portion (27) has the built-up portion (28) and the electronic component (semiconductor chips 26, 45). 48, 50). The multi-layer wiring board according to claim 2, wherein the multi-layer wiring board is formed in a size to be inserted together with the multi-layer wiring board.

請求項4に記載の発明は、図10〜図16に示すように、前記肉盛部(41)が、前記部品搭載領域(チップ搭載領域E)の外周に位置する前記下層側の基材(第1基材20)の上面と、前記上層側の基材(第2基材21)に設けられた前記くり抜き部(27)の内周面とに亘って形成されていることを特徴とする請求項1に記載の多層配線基板である。   In the invention according to claim 4, as shown in FIGS. 10 to 16, the build-up portion (41) is the base material on the lower layer side (41) located on the outer periphery of the component mounting area (chip mounting area E). It is formed over the upper surface of the first base material 20) and the inner peripheral surface of the cut-out portion (27) provided on the upper layer side base material (second base material 21). A multilayer wiring board according to claim 1.

請求項5に記載の発明は、図3〜図9、図17〜図19に示すように、上下面に配線(第1〜第4配線22〜25)がそれぞれパターン形成されて上下に積層される複数の基材(第1、第2基材20、21)のうち、上層側に位置する基材(第2基材21)に電子部品(半導体チップ26、45、48、50)が挿入するくり抜き部(27)を形成する工程と、
前記上層側の基材が配置される下層側の基材(第1基材20)の上面に肉盛部(28)を前記電子部品が配置される部品搭載領域(チップ搭載領域E)の外周に沿って枠状に形成すると共に、前記肉盛部の外周側に位置する前記下層側の基材の上面に絶縁性接着剤層(29)を設ける工程と、
前記絶縁性接着剤層を介して前記上層側の基材を前記下層側の基材上に重ね合わせて熱圧着することにより、前記絶縁性接着剤層を軟化させて前記上層側の基材と前記下層側の基材とを接合する工程と、
この接合された前記上層側の基材の前記くり抜き部に前記電子部品を挿入して搭載する工程と
を有することを特徴とする多層配線基板の製造方法である。
In the invention according to claim 5, as shown in FIGS. 3 to 9 and FIGS. 17 to 19, wirings (first to fourth wirings 22 to 25) are patterned on the upper and lower surfaces, respectively, and stacked on the upper and lower sides. Electronic components (semiconductor chips 26, 45, 48, 50) are inserted into the base material (second base material 21) located on the upper layer side among the plurality of base materials (first, second base materials 20, 21) Forming a hollowed portion (27);
An outer periphery of a component mounting region (chip mounting region E) where the electronic component is disposed on the upper surface of the lower layer side substrate (first substrate 20) on which the upper layer side substrate is disposed. And forming an insulating adhesive layer (29) on the upper surface of the base material on the lower layer located on the outer peripheral side of the build-up part,
The upper layer side base material is overlapped on the lower layer side base material via the insulating adhesive layer and thermocompression bonded, thereby softening the insulating adhesive layer and the upper layer side base material. Bonding the base material on the lower layer side;
And a step of inserting and mounting the electronic component on the cut-out portion of the bonded base material on the upper layer side.

請求項6に記載の発明は、図3〜図9、図17〜図19に示すように、前記肉盛部(28)を印刷やめっきによって前記絶縁性接着剤層(29)の厚みよりも厚く形成することを特徴とする請求項5に記載の多層配線基板の製造方法である。   As shown in FIGS. 3 to 9 and FIGS. 17 to 19, the invention according to claim 6 is configured such that the build-up portion (28) is formed by printing or plating more than the thickness of the insulating adhesive layer (29). The method for manufacturing a multilayer wiring board according to claim 5, wherein the multilayer wiring board is formed thick.

請求項7に記載の発明は、図10〜図16に示すように、上下面に配線(第1〜第4配線22〜25)がそれぞれパターン形成されて上下に積層される複数の基材(第1、第2基材20、21)のうち、上層側に位置する基材(第2基剤21)に電子部品(半導体チップ26)が挿入するくり抜き部(27)を形成する工程と、
前記上層側の基材が配置される下層側の基材(第1基材20)の上面に絶縁性接着剤層(29)を前記くり抜き部に対応する部分を除いて設け、この絶縁性接着剤層を介して前記上層側の基材を前記下層側の基材上に重ね合わせて仮固定する工程と、
前記上層側の基材の前記くり抜き部を通して露呈する前記下層側の基材に肉盛部(41)を前記電子部品が配置される部品搭載領域(チップ搭載領域E)の外周に沿って枠状に形成する工程と、
前記上層側の基材と前記下層側の基材とを熱圧着することにより、前記絶縁性接着剤層を軟化させて前記下層側の基材と前記上層側の基材とを接合する工程と、
この接合された前記上層側の基材の前記くり抜き部に前記電子部品を挿入して搭載する工程と
を有することを特徴とする多層配線基板の製造方法である。
As shown in FIGS. 10 to 16, the invention according to claim 7 includes a plurality of base materials in which wirings (first to fourth wirings 22 to 25) are respectively formed in a pattern on the upper and lower surfaces and stacked vertically. Forming a hollow portion (27) into which the electronic component (semiconductor chip 26) is inserted into the base material (second base material 21) located on the upper layer side of the first and second base materials 20, 21);
An insulating adhesive layer (29) is provided on the upper surface of the lower layer side base material (first base material 20) on which the upper layer side base material is disposed, except for the portion corresponding to the cut-out portion, and this insulating adhesion A step of superimposing and temporarily fixing the upper layer side substrate on the lower layer side substrate via an agent layer;
The build-up portion (41) is formed in a frame shape along the outer periphery of the component mounting area (chip mounting area E) where the electronic component is arranged on the lower layer side base material exposed through the hollowed portion of the upper layer side base material. Forming the step,
The step of softening the insulating adhesive layer by thermocompression bonding the upper layer side substrate and the lower layer side substrate to join the lower layer side substrate and the upper layer side substrate; ,
And a step of inserting and mounting the electronic component on the cut-out portion of the bonded base material on the upper layer side.

請求項8に記載の発明は、図10〜図16に示すように、前記肉盛部(41)を、ディスペンサによって、前記部品搭載領域(チップ搭載領域E)の外周に位置する前記下層側の基材(第1基材20)の上面と、前記上層側の基材(第2基材21)に設けられた前記くり抜き部(27)の内周面とに亘って形成することを特徴とする請求項7に記載の多層配線基板の製造方法。   In the invention according to claim 8, as shown in FIGS. 10 to 16, the build-up portion (41) is disposed on the lower layer side located on the outer periphery of the component mounting area (chip mounting area E) by a dispenser. It forms over the upper surface of a base material (1st base material 20), and the internal peripheral surface of the said hollow part (27) provided in the said base material (2nd base material 21) of the upper layer side, It is characterized by the above-mentioned. A method for manufacturing a multilayer wiring board according to claim 7.

請求項1に記載の発明によれば、表裏面に配線がそれぞれパターン形成された複数の基材が上下に積層され、この積層された内部に電子部品が搭載された多層配線基板であって、上層側の基材に電子部品が挿入するくり抜き部が形成され、この上層側の基材が下層側の基材上に配置されるので、上層側の基材を下層側の基材上に配置する前に、予め上層側の基材にくり抜き部を形成することができる。このため、特殊な切削装置を用いずに、くり抜き部を上層側の基材に簡単に且つ正確に形成することができ、これにより生産性の向上を図ることができる。   According to the first aspect of the present invention, there is provided a multilayer wiring board in which a plurality of base materials each having a wiring pattern formed on the front and back surfaces are stacked one above the other, and electronic components are mounted inside the stacked layers. A hollow part for inserting electronic components is formed on the base material on the upper layer side, and the base material on the upper layer side is placed on the base material on the lower layer side, so the base material on the upper layer side is placed on the base material on the lower layer side Before cutting, a cut-out portion can be formed in advance on the upper layer side base material. For this reason, it is possible to easily and accurately form the cut-out portion on the upper layer-side base material without using a special cutting device, thereby improving productivity.

この場合、特に下層側の基材の上面に電子部品が配置される部品搭載領域の外周を囲う枠状の肉盛部が形成され、この肉盛部の外周側に位置する部分の下層側の基材とこの部分に対向する上層側の基材との一方に絶縁性接着剤層が設けられ、この絶縁性接着剤層によって下層側の基材と上層側の基材とが接合されているので、予め上層側の基材にくり抜き部を形成しても、下層側の基材と上層側の基材とを絶縁性接着剤層で接合するときに、肉盛部によって絶縁性接着剤層がくり抜き部内に侵入するのを堰き止めることができ、これによりくり抜き部に電子部品を挿入して良好に且つ確実に搭載することができる。   In this case, a frame-shaped built-up portion surrounding the outer periphery of the component mounting area where the electronic component is arranged is formed on the upper surface of the base material on the lower layer side, and the lower layer side of the portion located on the outer peripheral side of the built-up portion is formed. An insulating adhesive layer is provided on one of the base material and the upper base material facing this portion, and the lower base material and the upper base material are joined by the insulating adhesive layer. Therefore, even if the cut-out portion is formed in advance on the upper layer side base material, when the lower layer side base material and the upper layer side base material are joined with the insulating adhesive layer, the insulating adhesive layer is formed by the built-up portion. Intrusion into the cut-out portion can be blocked, so that an electronic component can be inserted into the cut-out portion and can be mounted satisfactorily and reliably.

請求項2に記載の発明によれば、肉盛部が絶縁性接着剤層の厚みよりも厚く形成されていることにより、下層側の基材と上層側の基材とを熱圧着により接合するときに、絶縁性接着剤層が溶融しても、この溶融した絶縁性接着剤層が肉盛部を乗り越えないようにすることができる。このため、肉盛部によって絶縁性接着剤層が上層側の基材のくり抜き部内に侵入するのを確実に防ぐことができ、これによりくり抜き部に電子部品を挿入して正確に且つ精度良く搭載することができる。   According to the invention described in claim 2, since the build-up portion is formed thicker than the thickness of the insulating adhesive layer, the lower layer side substrate and the upper layer side substrate are joined by thermocompression bonding. Sometimes, even when the insulating adhesive layer is melted, the melted insulating adhesive layer can be prevented from getting over the built-up portion. For this reason, it is possible to reliably prevent the insulating adhesive layer from entering the hollowed portion of the base material on the upper layer side by the built-up portion, thereby inserting the electronic component into the hollowed portion and mounting it accurately and accurately. can do.

請求項3に記載の発明によれば、くり抜き部が肉盛部を電子部品と共に挿入する大きさに形成されていることにより、肉盛部を絶縁性接着剤層の厚みよりも十分に厚く形成しても、下層側の基材と上層側の基材とを重ね合わせるときに、肉盛部がくり抜き部内に挿入するので、これによっても絶縁性接着剤層がくり抜き部内に侵入するのを確実に防ぐことができるほか、特に肉盛部によって基板全体が厚くならないようにすることができると共に、下層側の基材と上層側の基材とを確実に且つ良好に接合することができる。   According to the invention described in claim 3, the cut-out portion is formed to have a size that allows the built-up portion to be inserted together with the electronic component, thereby forming the built-up portion sufficiently thicker than the thickness of the insulating adhesive layer. However, when the base material on the lower layer side is overlapped with the base material on the upper layer side, the built-up portion is inserted into the cut-out portion, so that it is ensured that the insulating adhesive layer penetrates into the cut-out portion. In addition to being able to prevent the entire substrate from being particularly thickened by the built-up portion, the lower layer side base material and the upper layer side base material can be reliably and satisfactorily joined.

請求項4に記載の発明によれば、肉盛部が、部品搭載領域の外周に位置する下層側の基材の上面と、上側側の基材に設けられたくり抜き部の内周面とに亘って形成されていることにより、上層側の基材に設けられたくり抜き部の内周面に沿って生じる下層側の基材と上層側の基材との隙間を肉盛部によって確実に塞ぐことができる。このため、下層側の基材と上層側の基材とを熱圧着により接合するときに、絶縁性接着剤層が溶融しても、肉盛部によって絶縁性接着剤層がくり抜き部内に侵入するのを確実に防ぐことができ、これによってもくり抜き部に電子部品を挿入して正確に且つ精度良く搭載することができる。   According to the invention described in claim 4, the build-up part is formed on the upper surface of the lower layer side base material located on the outer periphery of the component mounting region and the inner peripheral surface of the cutout part provided on the upper side base material. By being formed over the gap, the gap between the base material on the lower layer side and the base material on the upper layer side generated along the inner peripheral surface of the cutout portion provided on the base material on the upper layer side is surely blocked by the built-up portion. be able to. For this reason, when the base material on the lower layer side and the base material on the upper layer side are joined by thermocompression bonding, even if the insulating adhesive layer melts, the insulating adhesive layer penetrates into the cut-out portion by the built-up portion. Thus, the electronic component can be inserted into the cut-out portion and mounted accurately and accurately.

請求項5に記載の発明によれば、上下面に配線がそれぞれパターン形成されて上下に積層される複数の基材のうち、上層側に位置する基材に電子部品が挿入するくり抜き部を形成し、このくり抜き部が形成された上層側の基材を下層側の基材に接合するので、上層側の基材と下層側の基材とを接合する前に、予め上層側の基材に電子部品が挿入するくり抜き部を形成することができる。このため、請求項1に記載の発明と同様、特殊な切削装置を用いずに、くり抜き部を上層側の基材に簡単に且つ正確に形成することができ、これにより生産性の向上を図ることができる。   According to the fifth aspect of the present invention, a hollow portion for inserting an electronic component is formed in a base material located on the upper layer side among a plurality of base materials stacked in a vertical direction with wiring patterns formed on the upper and lower surfaces. Since the upper layer side substrate formed with the cut-out portion is bonded to the lower layer side substrate, before bonding the upper layer side substrate and the lower layer side substrate to the upper layer side substrate in advance. A hollow portion into which the electronic component is inserted can be formed. For this reason, similarly to the first aspect of the invention, the cut-out portion can be easily and accurately formed on the base material on the upper layer side without using a special cutting device, thereby improving productivity. be able to.

この場合には、特に下層側の基材の上面に肉盛部を電子部品が配置される部品搭載領域の外周に沿って枠状に形成すると共に、肉盛部の外周側に位置する下層側の基材の上面に絶縁性接着剤層を設けるので、予め上層側の基材に電子部品が挿入するくり抜き部を形成しても、上層側の基材を下層側の基材に重ね合わせて熱圧着するときに、肉盛部によって絶縁性接着剤層がくり抜き部内に侵入するのを堰き止めることができる。このため、予め上層側の基材にくり抜き部を形成して、上層側の基材と下層側の基材とを絶縁性接着剤層で接合しても、くり抜き部に電子部品を挿入して良好に且つ確実に搭載することができる。   In this case, in particular, the lower layer side located on the outer peripheral side of the built-up portion is formed on the upper surface of the base material on the lower layer side in a frame shape along the outer periphery of the component mounting area where the electronic component is arranged Since the insulating adhesive layer is provided on the upper surface of the base material, the upper layer side base material is superimposed on the lower layer side base material even if the cut-out portion into which the electronic component is inserted is previously formed in the upper layer base material. When the thermocompression bonding is performed, the insulative adhesive layer can be prevented from entering the cut-out portion by the built-up portion. For this reason, even if the cutout part is formed in the upper layer base material in advance and the upper layer base material and the lower layer base material are joined with the insulating adhesive layer, the electronic component is inserted into the cutout part. Good and reliable mounting is possible.

請求項6に記載の発明によれば、肉盛部を印刷やめっきによって絶縁性接着剤層の厚みよりも厚く形成することにより、肉盛部を印刷やめっきによって簡単に且つ容易に形成することができると共に、絶縁性接着剤層の厚みよりも肉盛部を厚く形成するので、下層側の基材と上層側の基材とを熱圧着するときに、絶縁性接着剤層が溶融しても、その絶縁性接着剤層が肉盛部を乗り越えないようにすることができる。このため、絶縁性接着剤層が上層側の基材のくり抜き部内に侵入するのを確実に防ぐことができ、これによりくり抜き部に電子部品を挿入して確実に且つ精度良く搭載することができる。   According to the sixth aspect of the present invention, the build-up portion is formed easily and easily by printing or plating by forming the build-up portion thicker than the thickness of the insulating adhesive layer by printing or plating. Since the build-up part is formed thicker than the thickness of the insulating adhesive layer, the insulating adhesive layer is melted when the lower layer side substrate and the upper layer side substrate are thermocompression bonded. However, the insulating adhesive layer can be prevented from getting over the built-up portion. For this reason, it is possible to reliably prevent the insulating adhesive layer from entering the cut-out portion of the upper-layer base material, and thus it is possible to insert the electronic component into the cut-out portion and mount it reliably and accurately. .

請求項7に記載の発明によれば、上下面に配線がそれぞれパターン形成されて上下に積層される複数の基材のうち、上層側の基材に電子部品が挿入するくり抜き部を形成し、このくり抜き部が形成された上層側の基材を下層側の基材に接合するので、請求項5に記載の発明と同様、下層側の基材と上層側の基材とを接合する前に、予め上層側の基材に電子部品が挿入するくり抜き部を形成することができる。このため、特殊な切削装置を用いずに、くり抜き部を上層側の基材に簡単に且つ正確に形成することができ、これにより生産性の向上を図ることができる。   According to the invention of claim 7, among the plurality of base materials that are vertically patterned with wirings formed on the upper and lower surfaces, a hollow portion is formed into which the electronic component is inserted into the upper base material, Since the base material on the upper layer side in which the cut-out portion is formed is joined to the base material on the lower layer side, before joining the base material on the lower layer side and the base material on the upper layer side as in the invention described in claim 5, A cut-out portion into which an electronic component is inserted can be formed in advance on the upper layer side base material. For this reason, it is possible to easily and accurately form the cut-out portion on the upper layer-side base material without using a special cutting device, thereby improving productivity.

この場合には、特に電子部品が配置される部品搭載領域の外周側に位置する下層側の基材の上面に絶縁性接着剤層を設け、この絶縁性接着剤層を介して下層側の基材上に上層側の基材を重ね合わせて仮固定し、この状態で上層側の基材のくり抜き部を通して露呈する下層側の基材に肉盛部を部品搭載領域の外周に沿って枠状に形成するので、予め上層側の基材に電子部品が挿入するくり抜き部を形成しても、下層側の基材と上層側の基材とを熱圧着して接合するときに、肉盛部によって絶縁性接着剤層がくり抜き部内に侵入するのを堰き止めることができ、これにより予め上層側の基材にくり抜き部を形成して上層側の基材と下層側の基材とを絶縁性接着剤層で接合しても、くり抜き部に電子部品を挿入して良好に且つ確実に搭載することができる。   In this case, in particular, an insulating adhesive layer is provided on the upper surface of the lower layer side substrate located on the outer peripheral side of the component mounting area where the electronic component is arranged, and the lower layer side substrate is interposed through this insulating adhesive layer. Overlay the upper base material on the material and temporarily fix it, and in this state, build up the overlay on the lower base material exposed through the hollowed out portion of the upper base material along the outer periphery of the component mounting area Therefore, even if the cut-out part into which the electronic component is inserted in the base material on the upper layer side is formed in advance, when the base material on the lower layer side and the base material on the upper layer side are joined by thermocompression bonding, Can prevent the insulative adhesive layer from penetrating into the cut-out portion, thereby forming a cut-out portion in the upper-layer base material in advance to insulate the upper-layer base material from the lower-layer base material. Even if it is joined with an adhesive layer, it is possible to insert electronic components in the cut-out part and mount it well and securely Kill.

請求項8に記載の発明によれば、肉盛部をディスペンサによって、部品搭載領域の外周に位置する下層側の基材の上面と、上層側の基材に設けられたくり抜き部の内周面とに亘って形成することにより、下層側の基材と上層側の基材とを重ね合わせて仮固定した状態でも、ディスペンサによって肉盛部を簡単に且つ容易に形成することができる。特に、肉盛部を部品搭載領域の外周に位置する下層側の基材の上面と、上層側の基材に設けられたくり抜き部の内周面とに亘って形成するので、くり抜き部の内周面に沿って生じる下層側の基材と上層側の基材との隙間を肉盛部によって確実に塞ぐことができる。このため、下層側の基材と上層側の基材とを熱圧着するときに、絶縁性接着剤層が溶融しても、この溶融した絶縁性接着剤層が肉盛部によってくり抜き部内に侵入するのを確実に防ぐことができ、これによってもくり抜き部に電子部品を挿入して正確に且つ精度良く搭載することができる。   According to the invention described in claim 8, by using the dispenser, the upper surface of the lower layer-side base material located on the outer periphery of the component mounting region and the inner peripheral surface of the hollow portion provided on the upper layer side base material are dispensed by the dispenser. Thus, even when the lower layer side base material and the upper layer side base material are superposed and temporarily fixed, the overlay portion can be easily and easily formed by the dispenser. In particular, since the built-up portion is formed across the upper surface of the base material on the lower layer side located on the outer periphery of the component mounting region and the inner peripheral surface of the cutout portion provided on the base material on the upper layer side, A gap between the base material on the lower layer side and the base material on the upper layer side generated along the peripheral surface can be reliably closed by the built-up portion. For this reason, even when the insulating adhesive layer is melted when the base material on the lower layer side and the base material on the upper layer side are melted, the melted insulating adhesive layer penetrates into the cut-out portion by the built-up portion. Thus, the electronic component can be inserted into the cut-out portion and mounted accurately and accurately.

(実施形態1)
以下、図1〜図9を参照して、この発明の多層配線基板を電子腕時計に用いた場合の実施形態1について説明する。
図1はこの発明を適用した電子腕時計を示した要部の拡大断面図、図2はその電子腕時計に組み込まれた多層配線基板の要部を拡大して示した断面図である。
この電子腕時計は、図1に示すように、腕時計ケース1を備えている。この腕時計ケース1の上部には、時計ガラス2が取り付けられており、この時計ガラス2の下面における外周部には、リング状に形成されたソーラーパネル3が設けられている。また、腕時計ケース1の内部には、時計モジュール4が収納されており、腕時計ケース1の下部には、裏蓋5が防水リング6を介して取り付けられている。
(Embodiment 1)
A first embodiment in which the multilayer wiring board of the present invention is used in an electronic wristwatch will be described below with reference to FIGS.
FIG. 1 is an enlarged cross-sectional view of a main part showing an electronic wristwatch to which the present invention is applied, and FIG. 2 is an enlarged cross-sectional view showing the main part of a multilayer wiring board incorporated in the electronic watch.
As shown in FIG. 1, the electronic wristwatch includes a wristwatch case 1. A watch glass 2 is attached to the upper part of the watch case 1, and a solar panel 3 formed in a ring shape is provided on the outer periphery of the lower surface of the watch glass 2. A watch module 4 is housed inside the watch case 1, and a back cover 5 is attached to the lower portion of the watch case 1 via a waterproof ring 6.

時計モジュール4は、図1に示すように、上部ハウジング7と下部ハウジング8とを備えている。上部ハウジング7の上方には、液晶表示パネル10がインターコネクタ11によって支持されており、この液晶表示パネル10の下側に位置する上部ハウジング7の上面には、バックライトパネル12が配置されている。また、上部ハウジング7と下部ハウジング8との間には、後述する多層配線基板13が配置されており、これら上部ハウジング7と下部ハウジング8とは、下部ハウジング8の下面に配置された地板14によって多層配線基板13を挟んだ状態で相互に取り付けられている。さらに、下部ハウジング8内には、電池15が電池押え板16によって押え付けられた状態で収納されている。この電池押え板16の下面には、裏蓋5に設けられた圧電素子17との導通を防ぐための絶縁シート16aが貼り付けられている。   As shown in FIG. 1, the timepiece module 4 includes an upper housing 7 and a lower housing 8. Above the upper housing 7, a liquid crystal display panel 10 is supported by an interconnector 11, and a backlight panel 12 is disposed on the upper surface of the upper housing 7 positioned below the liquid crystal display panel 10. . In addition, a multilayer wiring board 13 described later is disposed between the upper housing 7 and the lower housing 8, and the upper housing 7 and the lower housing 8 are separated by a ground plane 14 disposed on the lower surface of the lower housing 8. They are attached to each other with the multilayer wiring board 13 sandwiched therebetween. Further, the battery 15 is accommodated in the lower housing 8 while being pressed by the battery pressing plate 16. An insulating sheet 16 a for preventing conduction with the piezoelectric element 17 provided on the back cover 5 is attached to the lower surface of the battery pressing plate 16.

この場合、ソーラーパネル3は、外部光を受光して起電力を発生するものであり、スプリングなどの接続部材(図示せず)によって多層配線基板13と電気的に接続されている。液晶表示パネル10は、時刻などの情報を電気光学的に表示するものであり、インターコネクタ11によって多層配線基板13と電気的に接続されている。バックライトパネル12は、液晶表示パネル10を照明するものであり、EL素子(エレクトロルミネッセンス素子)などの平面型の発光素子からなり、スプリングなどの接続部材(図示せず)によって多層配線基板13と電気的に接続されている。電池15は、時計モジュール4の回路全体に電源を供給するものであり、電極板(図示せず)によって多層配線基板13と電気的に接続されている。   In this case, the solar panel 3 receives external light and generates an electromotive force, and is electrically connected to the multilayer wiring board 13 by a connection member (not shown) such as a spring. The liquid crystal display panel 10 displays information such as time in an electro-optical manner, and is electrically connected to the multilayer wiring board 13 by an interconnector 11. The backlight panel 12 illuminates the liquid crystal display panel 10 and is composed of a planar light emitting element such as an EL element (electroluminescence element), and is connected to the multilayer wiring board 13 by a connecting member (not shown) such as a spring. Electrically connected. The battery 15 supplies power to the entire circuit of the timepiece module 4, and is electrically connected to the multilayer wiring board 13 by an electrode plate (not shown).

ところで、多層配線基板13は、図2に示すように、第1、第2基材20、21の各上下面にそれぞれ第1〜第4配線22〜25が形成され、これら第1、第2基材20、21が上下に積層され、この積層された内部にLSIなどの半導体チップ26が搭載された構成になっている。すなわち、下層側に位置する第1基材20の下面には、銅箔を所定形状にパターンニングした第1配線22が設けられており、その上面にも、銅箔を所定形状にパターンニングした第2配線23が設けられている。また、上層側に位置する第2基材21の下面には、銅箔を所定形状にパターンニングした第3配線24が設けられており、その上面にも、銅箔を所定形状にパターンニングした第4配線25が設けられている。   By the way, as shown in FIG. 2, the multilayer wiring board 13 has first to fourth wirings 22 to 25 formed on the upper and lower surfaces of the first and second base materials 20 and 21, respectively. The substrates 20 and 21 are stacked one above the other, and a semiconductor chip 26 such as an LSI is mounted inside the stacked layers. That is, the first wiring 22 obtained by patterning the copper foil into a predetermined shape is provided on the lower surface of the first base material 20 located on the lower layer side, and the copper foil is also patterned into a predetermined shape on the upper surface. A second wiring 23 is provided. Moreover, the 3rd wiring 24 which patterned copper foil in the predetermined shape is provided in the lower surface of the 2nd base material 21 located in an upper layer side, and copper foil was patterned in the predetermined shape also on the upper surface. A fourth wiring 25 is provided.

また、上層側の第2基材21には、半導体チップ26が挿入するくり抜き部27が形成されている。下層側の第1基材20の上面には、半導体チップ26が載置されるチップ搭載領域Eが設けられていると共に、このチップ搭載領域Eの外周を囲んで肉盛部28が枠状に設けられている。この肉盛部28の外周側に位置する下層側の第1基材20の上面には、プリプレグなどの半硬化状態の絶縁性接着シートからなる絶縁性接着剤層29が設けられており、この絶縁性接着剤層29によって下層側の第1基材20と上層側の第2基材21とが接合されている。この場合、肉盛部28は、絶縁性接着剤層29の厚みよりも厚く形成されており、くり抜き部27は、肉盛部28が半導体チップ26と共に挿入する大きさに形成されている。   Further, a hollow portion 27 into which the semiconductor chip 26 is inserted is formed in the second base material 21 on the upper layer side. A chip mounting area E on which the semiconductor chip 26 is placed is provided on the upper surface of the first base material 20 on the lower layer side, and the built-up portion 28 surrounds the outer periphery of the chip mounting area E in a frame shape. Is provided. An insulating adhesive layer 29 made of a semi-cured insulating adhesive sheet such as a prepreg is provided on the upper surface of the first base material 20 on the lower layer side located on the outer peripheral side of the built-up portion 28. The first base material 20 on the lower layer side and the second base material 21 on the upper layer side are joined by the insulating adhesive layer 29. In this case, the build-up portion 28 is formed thicker than the thickness of the insulating adhesive layer 29, and the cut-out portion 27 is formed in a size that allows the build-up portion 28 to be inserted together with the semiconductor chip 26.

また、下層側の第1基材20のチップ搭載領域E上には、図2に示すように、半導体チップ26が上層側の第2基材21に設けられたくり抜き部27内に挿入されて導電性接着剤30によりグランドに接続された状態で接着されている。そして、この半導体チップ26は、その上面に設けられた複数のパッド電極26aがボンディングワイヤ31によって上層側の第2基材21の上面に設けられた第4配線25の各接続電極25a(図6参照)と電気的に接続され、この状態でモールド樹脂32によって封止されている。なお、第1、第2基材20、21の上下面に形成された第1〜第4配線22〜25は、図示しないが、接続を必要とする層間に設けられたIVH(インターステシャルバイアホール)によって電気的に接続されている。   On the chip mounting region E of the first base material 20 on the lower layer side, as shown in FIG. 2, the semiconductor chip 26 is inserted into a cutout portion 27 provided on the second base material 21 on the upper layer side. The conductive adhesive 30 is bonded in a state of being connected to the ground. In the semiconductor chip 26, a plurality of pad electrodes 26a provided on the upper surface thereof are connected to the connection electrodes 25a of the fourth wiring 25 provided on the upper surface of the second base 21 on the upper layer side by bonding wires 31 (FIG. 6). And is sealed with the mold resin 32 in this state. The first to fourth wirings 22 to 25 formed on the upper and lower surfaces of the first and second base materials 20 and 21 are not shown, but are IVHs (interstitial vias) provided between layers requiring connection. Hall).

次に、このような多層配線基板13の製造方法について、図3〜図9を参照して説明する。
上下に積層される第1、第2基材20、21のうち、図3に示すように、まず、第1基材20の下面に銅箔をパターンニングしてなる第1配線22を形成すると共に、第1基材20の上面にも銅箔をパターンニングしてなる第2配線23を形成する。この後、図4に示すように、第1基材20の上面に形成された第2配線23上に、半導体チップ26が載置されるチップ搭載領域Eの外周を囲う肉盛部28を印刷またはめっきによって枠状に形成する。そして、図5に示すように、肉盛部28の外周側に位置する第1基材20の上面にプリプレグなどの半硬化状態の絶縁性接着シートからなる絶縁性接着剤層29を設ける。この場合、肉盛部28は、絶縁性接着剤層29の厚みよりも十分に厚く形成する。
Next, a method for manufacturing such a multilayer wiring board 13 will be described with reference to FIGS.
Of the first and second base materials 20 and 21 stacked one above the other, as shown in FIG. 3, first, a first wiring 22 is formed by patterning a copper foil on the lower surface of the first base material 20. At the same time, the second wiring 23 formed by patterning the copper foil is also formed on the upper surface of the first base material 20. Thereafter, as shown in FIG. 4, the overlaying portion 28 that surrounds the outer periphery of the chip mounting region E on which the semiconductor chip 26 is placed is printed on the second wiring 23 formed on the upper surface of the first base material 20. Or it forms in frame shape by plating. And as shown in FIG. 5, the insulating adhesive layer 29 which consists of semi-hardened insulating adhesive sheets, such as a prepreg, is provided in the upper surface of the 1st base material 20 located in the outer peripheral side of the build-up part 28. As shown in FIG. In this case, the built-up portion 28 is formed sufficiently thicker than the thickness of the insulating adhesive layer 29.

この後、図6に示すように、第1基材20上に第2基材21を配置する。このときには、予め、第2基材21の下面に銅箔をパターンニングしてなる第3配線24を形成すると共に、第2基材21の上面にも銅箔をパターンニングしてなる第4配線25を形成するほか、半導体チップ26が挿入するくり抜き部27を形成する。この場合、くり抜き部27は、第1基材20に形成された肉盛部28が半導体チップ26と共に挿入する大きさに形成する。そして、この第2基材21を第1基材20上に配置する際には、第1基材20の第2配線23と第2基材21の第3配線24とを上下に対向させて、第1基材20に形成された肉盛部28を第2基材21のくり抜き部27内に挿入させ、この状態で第1基材20上に第2基材21を重ね合わせて配置する。   Thereafter, as shown in FIG. 6, the second base material 21 is disposed on the first base material 20. At this time, the third wiring 24 formed by patterning the copper foil on the lower surface of the second base material 21 is formed in advance, and the fourth wiring formed by patterning the copper foil on the upper surface of the second base material 21 in advance. 25 is formed, and a cutout portion 27 into which the semiconductor chip 26 is inserted is formed. In this case, the cutout portion 27 is formed in a size that allows the built-up portion 28 formed on the first base material 20 to be inserted together with the semiconductor chip 26. And when arrange | positioning this 2nd base material 21 on the 1st base material 20, the 2nd wiring 23 of the 1st base material 20 and the 3rd wiring 24 of the 2nd base material 21 are made to oppose up and down. The built-up portion 28 formed on the first base material 20 is inserted into the cutout portion 27 of the second base material 21, and the second base material 21 is disposed on the first base material 20 in this state. .

そして、図7に示すように、下層側の第1基材20と上層側の第2基材21とを熱圧着によって絶縁性接着剤層29を軟化させて接合する。この後、第2基材21のくり抜き部27を通して露呈する第1基材20の第2配線23上に導電性接着剤30を塗布する。この状態で、図8に示すように、第2基材21のくり抜き部27に半導体チップ26を挿入し、この挿入した半導体チップ26を第1基材20上に導電性接着剤30によって接着する。そして、半導体チップ26の上面に設けられたパッド電極26aと第2基材21の上面に設けられた第4配線25の各接続電極25aとをボンディングワイヤー31によって電気的に接続する。この後、図9に示すように、第2基材21のくり抜き部27から露呈する半導体チップ26および第2基材21の第4配線25の各接続電極25aをボンディングワイヤー31と共にモールド樹脂32によって封止する。   Then, as shown in FIG. 7, the first base material 20 on the lower layer side and the second base material 21 on the upper layer side are joined by softening the insulating adhesive layer 29 by thermocompression bonding. Thereafter, the conductive adhesive 30 is applied onto the second wiring 23 of the first base material 20 exposed through the cutout portion 27 of the second base material 21. In this state, as shown in FIG. 8, the semiconductor chip 26 is inserted into the cutout portion 27 of the second base material 21, and the inserted semiconductor chip 26 is bonded onto the first base material 20 with the conductive adhesive 30. . Then, the pad electrode 26 a provided on the upper surface of the semiconductor chip 26 and each connection electrode 25 a of the fourth wiring 25 provided on the upper surface of the second base material 21 are electrically connected by the bonding wire 31. Thereafter, as shown in FIG. 9, the semiconductor chip 26 exposed from the cutout portion 27 of the second base 21 and the connection electrodes 25 a of the fourth wiring 25 of the second base 21 are bonded together with the bonding wires 31 by the mold resin 32. Seal.

このように、この多層配線基板13によれば、上下面に第1〜第4配線22、〜25がそれぞれパターン形成されて上下に積層される第1、第2基材20、21のうち、上層側に位置する第2基材21に半導体チップ26が挿入するくり抜き部27を形成し、このくり抜き部27が形成された第2基材21を下層側の第1基材20上に配置して接合するので、上層側の第2基材21と下層側の第1基材20とを接合する前に、予め上層側の第2基材21に半導体チップ26が挿入するくり抜き部27を形成することができる。このため、従来例のような特殊な切削装置を用いずに、くり抜き部27を上層側の第2基材21に簡単に且つ正確に形成することができ、これにより生産性の向上を図ることができる。   As described above, according to the multilayer wiring substrate 13, the first and second base materials 20 and 21 in which the first to fourth wirings 22 and 25 are respectively patterned on the upper and lower surfaces and stacked vertically, A cutout portion 27 into which the semiconductor chip 26 is inserted is formed on the second base material 21 located on the upper layer side, and the second base material 21 on which the cutout portion 27 is formed is disposed on the first base material 20 on the lower layer side. Therefore, before joining the second base material 21 on the upper layer side and the first base material 20 on the lower layer side, a cutout portion 27 into which the semiconductor chip 26 is inserted in the second base material 21 on the upper layer side is formed in advance. can do. For this reason, it is possible to easily and accurately form the cutout portion 27 on the second base material 21 on the upper layer side without using a special cutting device as in the conventional example, thereby improving productivity. Can do.

この場合、特に下層側の第1基材20の上面に肉盛部28を半導体チップ26が載置されるチップ搭載領域Eの外周に沿って枠状に形成すると共に、この肉盛部28の外周側に位置する第1基材20の上面に絶縁性接着剤層29を設けているので、予め上層側の第2基材21に半導体チップ26が挿入するくり抜き部27を形成しても、第2基材21を第1基材20上に重ね合わせて熱圧着するときに、肉盛部28によって絶縁性接着剤層29がくり抜き部27内に侵入するのを堰き止めることができる。このため、予め上層側の第2基材21にくり抜き部27を形成して、第2基材21と第1基材20とを絶縁性接着剤層29で接合しても、くり抜き部27に半導体チップ26を挿入して確実に且つ正確に搭載することができる。   In this case, the built-up portion 28 is formed in a frame shape along the outer periphery of the chip mounting region E on which the semiconductor chip 26 is placed, particularly on the upper surface of the first base material 20 on the lower layer side. Since the insulating adhesive layer 29 is provided on the upper surface of the first base material 20 located on the outer peripheral side, even if the cutout portion 27 into which the semiconductor chip 26 is inserted is formed in advance on the second base material 21 on the upper layer side, When the second base material 21 is superimposed on the first base material 20 and thermocompression bonded, it is possible to prevent the insulating adhesive layer 29 from entering the cut-out part 27 by the build-up part 28. For this reason, even if the cutout portion 27 is formed in advance on the second base material 21 on the upper layer side and the second base material 21 and the first base material 20 are joined with the insulating adhesive layer 29, the cutout portion 27 is formed. The semiconductor chip 26 can be inserted and mounted reliably and accurately.

また、このときには、肉盛部28を印刷やめっきによって絶縁性接着剤層29の厚みよりも厚く形成しているので、肉盛部28を第1基材20上に印刷やめっきによって簡単に且つ容易に形成することができる。特に、肉盛部28を絶縁性接着剤層29の厚みよりも十分に厚く形成しているので、下層側の第1基材20と上層側の第2基材21とを熱圧着するときに、絶縁性接着剤層29が溶融しても、その溶融した絶縁性接着剤層29が肉盛部28を乗り越えないようにすることができる。このため、絶縁性接着剤層29が上層側の第2基材21に設けられたくり抜き部27内に侵入するのを確実に防ぐことができ、これによりくり抜き部27に半導体チップ26を挿入させて確実に且つ精度良く搭載することができる。   At this time, since the build-up portion 28 is formed thicker than the thickness of the insulating adhesive layer 29 by printing or plating, the build-up portion 28 is easily formed on the first substrate 20 by printing or plating. It can be formed easily. In particular, since the built-up portion 28 is formed sufficiently thicker than the thickness of the insulating adhesive layer 29, when the first base material 20 on the lower layer side and the second base material 21 on the upper layer side are subjected to thermocompression bonding. Even if the insulating adhesive layer 29 is melted, the melted insulating adhesive layer 29 can be prevented from getting over the built-up portion 28. For this reason, it is possible to reliably prevent the insulating adhesive layer 29 from entering the cutout portion 27 provided in the second base material 21 on the upper layer side, thereby inserting the semiconductor chip 26 into the cutout portion 27. Can be mounted reliably and accurately.

(実施形態2)
次に、図10〜図16を参照して、この発明の多層配線基板の実施形態2について説明する。なお、図1〜図9に示された実施形態1と同一部分には同一符号を付して説明する。
この多層配線基板40の製造方法では、まず、図10に示すように、第1基材20の下面に銅箔をパターンニングしてなる第1配線22を形成すると共に、第1基材20の上面にも銅箔をパターンニングしてなる第2配線23を形成する。この後、図11に示すように、第1基材20の上面における半導体チップ26が載置されるチップ搭載領域Eの外周側に位置する部分に、プリプレグなどの絶縁性接着剤層29を設ける。
(Embodiment 2)
Next, a second embodiment of the multilayer wiring board according to the present invention will be described with reference to FIGS. In addition, the same code | symbol is attached | subjected and demonstrated to the same part as Embodiment 1 shown by FIGS.
In the method of manufacturing the multilayer wiring board 40, first, as shown in FIG. 10, the first wiring 22 formed by patterning the copper foil is formed on the lower surface of the first base material 20, and the first base material 20 A second wiring 23 formed by patterning a copper foil is also formed on the upper surface. Thereafter, as shown in FIG. 11, an insulating adhesive layer 29 such as a prepreg is provided on a portion located on the outer peripheral side of the chip mounting region E on which the semiconductor chip 26 is placed on the upper surface of the first base material 20. .

この後、図12に示すように、絶縁性接着剤層29を介して第1基材20上に第2基材21を配置して絶縁性接着剤層29が軟化しない程度に仮固定する。このときには、予め、第2基材21の下面に銅箔をパターンニングしてなる第3配線24を形成すると共に、第2基材21の上面にも銅箔をパターンニングしてなる第4配線25を形成するほか、半導体チップ26が挿入するくり抜き部27を形成する。この状態で、図13に示すように、くり抜き部27を通して露呈する下層側の第1基材20の上面に、肉盛部41をチップ搭載領域Eの外周に沿って枠状に形成する。この肉盛部41は、図13に示すように、ディスペンサによって、チップ搭載領域Eの外周に位置する下層側の第1基材20の上面と、上層側の第2基材21に形成されたくり抜き部27の内周面とに亘って形成される。   Then, as shown in FIG. 12, the 2nd base material 21 is arrange | positioned on the 1st base material 20 via the insulating adhesive layer 29, and it fixes temporarily to such an extent that the insulating adhesive layer 29 does not soften. At this time, the third wiring 24 formed by patterning the copper foil on the lower surface of the second base material 21 is formed in advance, and the fourth wiring formed by patterning the copper foil on the upper surface of the second base material 21 in advance. 25 is formed, and a cutout portion 27 into which the semiconductor chip 26 is inserted is formed. In this state, as shown in FIG. 13, the built-up portion 41 is formed in a frame shape along the outer periphery of the chip mounting region E on the upper surface of the first base material 20 on the lower layer side exposed through the cutout portion 27. As shown in FIG. 13, the build-up portion 41 is formed by the dispenser on the upper surface of the first base material 20 on the lower layer side located on the outer periphery of the chip mounting region E and the second base material 21 on the upper layer side. It is formed over the inner peripheral surface of the cutout portion 27.

そして、図14に示すように、下層側の第1基材20と上層側の第2基材21とを熱圧着によって絶縁性接着剤層29を軟化させて接合する。この後、第2基材21のくり抜き部27を通して露呈する第1基材20の第2配線23上に導電性接着剤30を塗布する。この状態で、図15に示すように、第2基材21のくり抜き部27に半導体チップ26を挿入して第1基材20上に導電性接着剤30によって接着する。そして、半導体チップ26の上面に設けられたパッド電極26aと第2基材21の上面に設けられた第4配線25の各接続電極25aとをボンディングワイヤー31によって電気的に接続する。この後、図16に示すように、第2基材21のくり抜き部27から露呈する半導体チップ26および第2基材21の第4配線25の各接続電極25aをボンディングワイヤー31と共にモールド樹脂32によって封止する。   Then, as shown in FIG. 14, the first base material 20 on the lower layer side and the second base material 21 on the upper layer side are joined by softening the insulating adhesive layer 29 by thermocompression bonding. Thereafter, the conductive adhesive 30 is applied onto the second wiring 23 of the first base material 20 exposed through the cutout portion 27 of the second base material 21. In this state, as shown in FIG. 15, the semiconductor chip 26 is inserted into the cutout portion 27 of the second base material 21 and bonded to the first base material 20 with the conductive adhesive 30. Then, the pad electrode 26 a provided on the upper surface of the semiconductor chip 26 and each connection electrode 25 a of the fourth wiring 25 provided on the upper surface of the second base material 21 are electrically connected by the bonding wire 31. Thereafter, as shown in FIG. 16, the semiconductor chip 26 exposed from the cutout portion 27 of the second base material 21 and the connection electrodes 25 a of the fourth wiring 25 of the second base material 21 are bonded together with the bonding wires 31 by the mold resin 32. Seal.

このように、この多層配線基板40の製造方法によれば、上下面に第1〜第4配線22〜25がパターン形成されて上下に積層される第1、第2基材20、21のうち、上層側の第2基材21に半導体チップ26が挿入するくり抜き部27を形成し、このくり抜き部27が形成された上層側の第2基材21を下層側の第1基材20に接合するので、実施形態1と同様、下層側の第1基材20と上層側の第2基材21とを接合する前に、予め上層側の第2基材21に半導体チップ26が挿入するくり抜き部27を形成することができる。このため、特殊な切削装置を用いずに、くり抜き部27を上層側の第2基材21に簡単に且つ正確に形成することができ、これにより生産性の向上を図ることができる。   As described above, according to the method for manufacturing the multilayer wiring board 40, the first to fourth base materials 20 and 21 in which the first to fourth wirings 22 to 25 are patterned on the upper and lower surfaces and stacked vertically. Then, a cutout portion 27 into which the semiconductor chip 26 is inserted is formed in the second base material 21 on the upper layer side, and the second base material 21 on the upper layer side formed with the cutout portion 27 is joined to the first base material 20 on the lower layer side. Therefore, similarly to the first embodiment, before joining the lower-layer-side first base material 20 and the upper-layer-side second base material 21, the semiconductor chip 26 is inserted into the upper-layer-side second base material 21 in advance. A portion 27 can be formed. For this reason, it is possible to easily and accurately form the cutout portion 27 on the second base material 21 on the upper layer side without using a special cutting device, thereby improving the productivity.

この場合、特に下層側の第1基材20の上面における半導体チップ26のチップ搭載領域Eの外周側に位置する部分に絶縁性接着剤層29を設け、この絶縁性接着剤層29を介して第1基材20上に第2基材21を重ね合わせて仮固定し、この状態で第2基材21のくり抜き部27を通して露呈する下層側の第1基材20上に肉盛部41をチップ搭載領域Eの外周に沿って枠状に形成するので、予め第2基材21に半導体チップ26が挿入するくり抜き部27を形成しても、第1基材20と第2基材21とを熱圧着して接合するときに、肉盛部41によって絶縁性接着剤層29がくり抜き部27内に侵入するのを堰き止めることができる。このため、予め第2基材21にくり抜き部27を形成して第2基材21と第1基材20とを絶縁性接着剤層29で接合しても、くり抜き部27に半導体チップ26を挿入して正確に且つ確実に搭載することができる。。   In this case, in particular, an insulating adhesive layer 29 is provided on a portion located on the outer peripheral side of the chip mounting region E of the semiconductor chip 26 on the upper surface of the first base material 20 on the lower layer side, and the insulating adhesive layer 29 is interposed therebetween. The second base material 21 is superposed and temporarily fixed on the first base material 20, and the build-up portion 41 is formed on the first base material 20 on the lower layer side exposed through the cutout portion 27 of the second base material 21 in this state. Since it is formed in a frame shape along the outer periphery of the chip mounting area E, the first base material 20 and the second base material 21 are formed even if the cutout portion 27 into which the semiconductor chip 26 is inserted is formed in the second base material 21 in advance. It is possible to prevent the insulating adhesive layer 29 from entering the cut-out portion 27 by the build-up portion 41 when joining by thermocompression bonding. For this reason, even if the cutout portion 27 is formed in the second base material 21 in advance and the second base material 21 and the first base material 20 are joined by the insulating adhesive layer 29, the semiconductor chip 26 is attached to the cutout portion 27. It can be inserted and mounted accurately and reliably. .

また、このときには、肉盛部41をディスペンサによって、チップ搭載領域Eの外周に位置する下層側の第1基材20の上面と、上層側の第2基材21に設けられたくり抜き部27の内周面とに亘って形成するので、第1基材20と第2基材21とを重ね合わせて仮固定した状態でも、ディスペンサによって肉盛部41を簡単に且つ容易に形成することができる。特に、肉盛部41を、チップ搭載領域Eの外周に位置する第1基材20の上面と、第2基材21のくり抜き部27の内周面とに亘って形成しているので、くり抜き部27の内周面に沿って生じる第1基材20と第2基材21との隙間を肉盛部41によって確実に塞ぐことができる。このため、第1基材20と第2基材21とを熱圧着するときに、絶縁性接着剤層29が溶融しても、その溶融した絶縁性接着剤層29が肉盛部41によってくり抜き部27内に侵入するのを確実に防ぐことができ、これによりくり抜き部27に半導体チップ26を挿入させて確実に且つ精度良く搭載することができる。   Further, at this time, the built-up portion 41 is dispensed by the dispenser with the upper surface of the first base material 20 on the lower layer side located on the outer periphery of the chip mounting region E and the cutout portion 27 provided on the second base material 21 on the upper layer side. Since it forms over an inner peripheral surface, even if the 1st base material 20 and the 2nd base material 21 are piled up and temporarily fixed, the build-up part 41 can be formed easily and easily with a dispenser. . In particular, since the built-up portion 41 is formed across the upper surface of the first base material 20 located on the outer periphery of the chip mounting region E and the inner peripheral surface of the cutout portion 27 of the second base material 21, The gap between the first base material 20 and the second base material 21 generated along the inner peripheral surface of the portion 27 can be reliably closed by the built-up portion 41. Therefore, when the first base material 20 and the second base material 21 are thermocompression bonded, even if the insulating adhesive layer 29 is melted, the melted insulating adhesive layer 29 is cut out by the built-up portion 41. Intrusion into the portion 27 can be reliably prevented, whereby the semiconductor chip 26 can be inserted into the cutout portion 27 and can be reliably and accurately mounted.

なお、上記実施形態1、2では、半導体チップ26の各パッド電極26aを上層側の第2基材21の上面に形成された第4配線25の各接続電極25aにワイヤーボンディングによって接続した場合について述べたが、これに限らず、例えば図17〜図19にそれぞれ示すように接続した構成でも良い。   In the first and second embodiments, each pad electrode 26a of the semiconductor chip 26 is connected to each connection electrode 25a of the fourth wiring 25 formed on the upper surface of the second base material 21 on the upper layer side by wire bonding. Although described, it is not restricted to this, For example, the structure connected as shown in FIGS. 17-19 may be sufficient, for example.

すなわち、図17に示した第1変形例では、半導体チップ45の下面に各パッド電極(図示せず)を設け、この半導体チップ45を第2基材21のくり抜き部27内に挿入し、この状態で第1基材20のチップ搭載領域Eに形成された第2配線23の各接続電極23aと半導体チップ45の各パッド電極とをBGA(ボールグリッドアレイ)方式による半田ボール46でそれぞれ接続している。この場合、第1基材20の第2配線23の各接続電極23aは、IVH47によって下面側の第1配線22と電気的に接続されている。   That is, in the first modification shown in FIG. 17, each pad electrode (not shown) is provided on the lower surface of the semiconductor chip 45, and the semiconductor chip 45 is inserted into the cutout portion 27 of the second base material 21. In this state, each connection electrode 23a of the second wiring 23 formed in the chip mounting region E of the first base material 20 and each pad electrode of the semiconductor chip 45 are connected by solder balls 46 by a BGA (ball grid array) method. ing. In this case, each connection electrode 23 a of the second wiring 23 of the first base material 20 is electrically connected to the first wiring 22 on the lower surface side by IVH 47.

また、図18に示した第2変形例では、半導体チップ48の側面から延出された各接続リード48aを第1基材20のチップ搭載領域Eに形成された第2配線23の各接続電極23bに半田49でそれぞれ接続している。また、図19に示した第3変形例では、半導体チップ50の側面に設けられた各パッド電極(図示せず)を第1基材20のチップ搭載領域Eに形成された第2配線23の各接続電極23bに半田51でそれぞれ接続している。このような第1〜第3変形例においても、第1基材20の上面に肉盛部28をチップ搭載領域Eの外周に沿って枠状に形成することにより、実施形態1と同様の作用効果がある。   In the second modification shown in FIG. 18, each connection lead 48 a extending from the side surface of the semiconductor chip 48 is connected to each connection electrode of the second wiring 23 formed in the chip mounting region E of the first base material 20. 23b is connected with solder 49 respectively. In the third modification shown in FIG. 19, each pad electrode (not shown) provided on the side surface of the semiconductor chip 50 is formed on the second wiring 23 formed in the chip mounting region E of the first base material 20. Each connection electrode 23b is connected by solder 51. Also in the first to third modified examples, by forming the built-up portion 28 in a frame shape along the outer periphery of the chip mounting region E on the upper surface of the first base material 20, the same operation as that of the first embodiment is achieved. effective.

なおまた、上記実施形態1、2およびその各変形例では、第1、第2基材20、21を上下に積層させた2層構造の多層配線基板13、40について述べたが、これに限らず、3枚以上の基材を順次絶縁性接着剤層29によって積層させた構成でも良い。このような多層配線基板では、更なる高密度実装が可能になる。   In the first and second embodiments and the modifications thereof, the multilayer wiring boards 13 and 40 having the two-layer structure in which the first and second base materials 20 and 21 are stacked one above the other have been described. Alternatively, a configuration in which three or more base materials are sequentially laminated by the insulating adhesive layer 29 may be used. Such a multilayer wiring board enables further high-density mounting.

さらに、上記実施形態1、2およびその各変形例では、多層配線基板13、40を電子腕時計に用いた場合について述べたが、これに限らず、例えばトラベルウォッチ、置き時計、掛け時計などの電子時計に適用することができるほか、必ずしも電子時計である必要はなく、携帯電話機、電子辞書、電子カメラ、PDA(パーソナル・デジタル・アシスタント)、パーソナルコンピュータなどの各種の電子機器に広く用いることができる。   Further, in the first and second embodiments and the modifications thereof, the case where the multilayer wiring boards 13 and 40 are used for an electronic watch has been described. However, the present invention is not limited to this, and for example, an electronic watch such as a travel watch, a table clock, a wall clock, etc. In addition to being applicable, it is not necessarily an electronic timepiece, and can be widely used in various electronic devices such as a mobile phone, an electronic dictionary, an electronic camera, a PDA (personal digital assistant), and a personal computer.

この発明を適用した電子腕時計の要部を示した拡大断面図である。(実施形態1)It is the expanded sectional view which showed the principal part of the electronic wristwatch to which this invention is applied. (Embodiment 1) 図1の電子腕時計に組み込まれた多層配線基板の要部を示した拡大断面図である。FIG. 2 is an enlarged cross-sectional view showing a main part of a multilayer wiring board incorporated in the electronic wristwatch of FIG. 1. 図2の多層配線基板の製造方法において下層側の第1基材の上下面に配線を形成した状態の断面図である。FIG. 3 is a cross-sectional view of a state in which wiring is formed on the upper and lower surfaces of the first base material on the lower layer side in the method for manufacturing the multilayer wiring board of FIG. 2. 図3の第1基材上に肉盛部を形成した状態の断面図である。It is sectional drawing of the state which formed the build-up part on the 1st base material of FIG. 図4の肉盛部の外周側に位置する第1基材の上面に絶縁性接着剤層を設けた状態の断面図である。It is sectional drawing of the state which provided the insulating adhesive bond layer on the upper surface of the 1st base material located in the outer peripheral side of the build-up part of FIG. 図5の第1基材上に第2基材を配置した状態の断面図である。It is sectional drawing of the state which has arrange | positioned the 2nd base material on the 1st base material of FIG. 図6の第1、第2基材を熱圧着により接合した状態の断面図である。It is sectional drawing of the state which joined the 1st, 2nd base material of FIG. 6 by thermocompression bonding. 図7の第2基材のくり抜き部内に半導体チップを配置してワイヤーボンディングした状態の断面図である。It is sectional drawing of the state which has arrange | positioned the semiconductor chip in the hollow part of the 2nd base material of FIG. 7, and was wire-bonded. 図8の半導体チップをモールド樹脂で封止した状態の断面図である。It is sectional drawing of the state which sealed the semiconductor chip of FIG. 8 with mold resin. この発明の多層配線基板の製造方法において下層側の第1基材の上下面に配線を形成した状態の断面図である。(実施形態2)It is sectional drawing of the state which formed the wiring in the upper and lower surfaces of the 1st base material of the lower layer side in the manufacturing method of the multilayer wiring board of this invention. (Embodiment 2) 図10の第1基材の上面に絶縁性接着剤層を設けた状態の断面図である。It is sectional drawing of the state which provided the insulating adhesive layer on the upper surface of the 1st base material of FIG. 図11の第1基材上に第2基材を仮固定した状態の断面図である。It is sectional drawing of the state which temporarily fixed the 2nd base material on the 1st base material of FIG. 図12の第1基材上に肉盛部を形成した状態の断面図である。It is sectional drawing of the state which formed the build-up part on the 1st base material of FIG. 図13の第1、第2基材を熱圧着により接合して半導体チップをくり抜き部内に挿入した状態の断面図である。It is sectional drawing of the state which joined the 1st, 2nd base material of FIG. 13 by thermocompression bonding, and inserted the semiconductor chip in the hollow part. 図14の半導体チップをワイヤーボンディングした状態の断面図である。It is sectional drawing of the state which carried out the wire bonding of the semiconductor chip of FIG. 図15の半導体チップをモールド樹脂で封止した状態の断面図である。It is sectional drawing of the state which sealed the semiconductor chip of FIG. 15 with mold resin. この発明の多層配線基板に組み込まれる半導体チップの接続構造の第1変形例を示した断面図である。It is sectional drawing which showed the 1st modification of the connection structure of the semiconductor chip integrated in the multilayer wiring board of this invention. この発明の多層配線基板に組み込まれる半導体チップの接続構造の第2変形例を示した断面図である。It is sectional drawing which showed the 2nd modification of the connection structure of the semiconductor chip integrated in the multilayer wiring board of this invention. この発明の多層配線基板に組み込まれる半導体チップの接続構造の第3変形例を示した断面図である。It is sectional drawing which showed the 3rd modification of the connection structure of the semiconductor chip integrated in the multilayer wiring board of this invention.

符号の説明Explanation of symbols

13、40 多層配線基板
20 第1基材
21 第2基材
22〜25 第1〜第4配線
26、45、48、50 半導体チップ
27 くり抜き部
28、41 肉盛部
29 絶縁性接着剤層
DESCRIPTION OF SYMBOLS 13, 40 Multilayer wiring board 20 1st base material 21 2nd base material 22-25 1st-4th wiring 26, 45, 48, 50 Semiconductor chip 27 Cut-out part 28, 41 Overlay part 29 Insulating adhesive layer

Claims (8)

表裏面に配線がそれぞれパターン形成された複数の基材が上下に積層され、この積層された内部に電子部品が搭載された多層配線基板であって、
上層側に位置する前記基材に前記電子部品が挿入するくり抜き部が形成され、この上層側の基材が配置される下層側の前記基材の上面に、前記電子部品が配置される部品搭載領域の外周を囲う枠状の肉盛部が形成され、この肉盛部の外周側に位置する部分の前記下層側の基材とこの部分に対向する前記上層側の基材との一方に絶縁性接着剤層が設けられ、この絶縁性接着剤層によって前記下層側の基材と前記上層側の基材とが接合され、この状態で前記くり抜き部に前記電子部品が挿入されて搭載されていることを特徴とする多層配線基板。
A multilayer wiring board in which a plurality of base materials each having a wiring pattern formed on the front and back surfaces are stacked one above the other, and electronic components are mounted inside the stacked layers,
A component mounting in which a cut-out portion for inserting the electronic component is formed in the base material positioned on the upper layer side, and the electronic component is disposed on the upper surface of the base material on the lower layer side on which the base material on the upper layer side is disposed A frame-shaped built-up portion surrounding the outer periphery of the region is formed, and insulated from one of the base material on the lower layer side of the portion located on the outer peripheral side of the built-up portion and the base material on the upper layer side facing this portion An adhesive layer is provided, and the base material on the lower layer side and the base material on the upper layer side are joined by the insulating adhesive layer, and the electronic component is inserted and mounted in the cut-out portion in this state. A multilayer wiring board characterized by comprising:
前記肉盛部は、前記絶縁性接着剤層の厚みよりも厚く形成されていることを特徴とする請求項1に記載の多層配線基板。   The multilayer wiring board according to claim 1, wherein the build-up portion is formed thicker than a thickness of the insulating adhesive layer. 前記くり抜き部は、前記肉盛部が前記電子部品と共に挿入する大きさに形成されていることを特徴とする請求項2に記載の多層配線基板。   3. The multilayer wiring board according to claim 2, wherein the cut-out portion is formed in a size such that the build-up portion is inserted together with the electronic component. 前記肉盛部は、前記部品搭載領域の外周に位置する前記下層側の基材の上面と、前記上層側の基材に設けられた前記くり抜き部の内周面とに亘って形成されていることを特徴とする請求項1に記載の多層配線基板。   The build-up portion is formed across the upper surface of the lower layer side base material located on the outer periphery of the component mounting region and the inner peripheral surface of the cutout portion provided on the upper layer side base material. The multilayer wiring board according to claim 1. 上下面に配線がそれぞれパターン形成されて上下に積層される複数の基材のうち、上層側に位置する基材に電子部品が挿入するくり抜き部を形成する工程と、
前記上層側の基材が配置される下層側の基材の上面に肉盛部を前記電子部品が配置される部品搭載領域の外周に沿って枠状に形成すると共に、前記肉盛部の外周側に位置する前記下層側の基材の上面に絶縁性接着剤層を設ける工程と、
前記絶縁性接着剤層を介して前記上層側の基材を前記下層側の基材上に重ね合わせて熱圧着することにより、前記絶縁性接着剤層を軟化させて前記上層側の基材と前記下層側の基材とを接合する工程と、
この接合された前記上層側の基材の前記くり抜き部に前記電子部品を挿入して搭載する工程と
を有することを特徴とする多層配線基板の製造方法。
A step of forming a hollow portion into which an electronic component is inserted into a base material located on the upper layer side among a plurality of base materials that are respectively patterned on the upper and lower surfaces and stacked vertically,
A built-up portion is formed in a frame shape on the upper surface of the lower-layer side substrate on which the upper-layer side substrate is disposed, along the outer periphery of the component mounting region on which the electronic component is disposed, and the outer periphery of the built-up portion Providing an insulating adhesive layer on the upper surface of the base material on the lower layer side located on the side;
The upper layer side base material is overlapped on the lower layer side base material via the insulating adhesive layer and thermocompression bonded, thereby softening the insulating adhesive layer and the upper layer side base material. Bonding the base material on the lower layer side;
And a step of inserting and mounting the electronic component on the cut-out portion of the bonded upper-layer base material.
前記肉盛部は、印刷やめっきによって前記絶縁性接着剤層の厚みよりも厚く形成されることを特徴とする請求項5に記載の多層配線基板の製造方法。   The method for manufacturing a multilayer wiring board according to claim 5, wherein the build-up portion is formed thicker than the insulating adhesive layer by printing or plating. 上下面に配線がそれぞれパターン形成されて上下に積層される複数の基材のうち、上層側に位置する基材に電子部品が挿入するくり抜き部を形成する工程と、
前記上層側の基材が配置される下層側の基材の上面に絶縁性接着剤層を前記くり抜き部に対応する部分を除いて設け、この絶縁性接着剤層を介して前記上層側の基材を前記下層側の基材上に重ね合わせて仮固定する工程と、
前記上層側の基材の前記くり抜き部を通して露呈する前記下層側の基材の上面に肉盛部を前記電子部品が配置される部品搭載領域の外周に沿って枠状に形成する工程と、
前記上層側の基材と前記下層側の基材とを熱圧着することにより、前記絶縁性接着剤層を軟化させて前記下層側の基材と前記上層側の基材とを接合する工程と、
この接合された前記上層側の基材の前記くり抜き部に前記電子部品を挿入して搭載する工程と
を有することを特徴とする多層配線基板の製造方法。
A step of forming a hollow portion into which an electronic component is inserted into a base material located on the upper layer side among a plurality of base materials that are respectively patterned on the upper and lower surfaces and stacked vertically,
An insulating adhesive layer is provided on the upper surface of the lower layer side substrate on which the upper layer side substrate is disposed, excluding a portion corresponding to the cut-out portion, and the upper layer side base is interposed through the insulating adhesive layer. A step of superimposing and temporarily fixing the material on the base material on the lower layer side;
Forming a built-up portion in a frame shape along the outer periphery of a component mounting area where the electronic component is disposed on the upper surface of the lower-layer base material exposed through the cut-out portion of the upper-layer base material;
The step of softening the insulating adhesive layer by thermocompression bonding the upper layer side substrate and the lower layer side substrate to join the lower layer side substrate and the upper layer side substrate; ,
And a step of inserting and mounting the electronic component on the cut-out portion of the bonded upper-layer base material.
前記肉盛部は、ディスペンサによって、前記部品搭載領域の外周に位置する前記下層側の基材の上面と、前記上層側の基材に設けられた前記くり抜き部の内周面とに亘って形成されることを特徴とする請求項7に記載の多層配線基板の製造方法。

The build-up portion is formed by a dispenser across the upper surface of the base material on the lower layer side located on the outer periphery of the component mounting region and the inner peripheral surface of the cutout portion provided on the base material on the upper layer side. The method for producing a multilayer wiring board according to claim 7, wherein:

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170654A (en) * 2008-01-16 2009-07-30 U-Ai Electronics Corp Printed circuit board and method of manufacturing printed circuit board
JP2017183649A (en) * 2016-03-31 2017-10-05 大日本印刷株式会社 Electronic device and manufacturing method thereof

Citations (6)

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Publication number Priority date Publication date Assignee Title
JPS6390158A (en) * 1986-09-29 1988-04-21 アメリカン テレフォン アンド テレグラフ カムパニー Method of forming multilayer structure with non-flat surface
JPH0339878U (en) * 1989-08-29 1991-04-17
JPH09283918A (en) * 1996-04-18 1997-10-31 I R:Kk Cradle for printed-circuit board and its manufacture
JPH1065047A (en) * 1996-08-20 1998-03-06 Tokuyama Corp Package manufacturing method for mounting semiconductor element
JPH1079458A (en) * 1996-09-03 1998-03-24 Ibiden Co Ltd Semiconductor mounting substrate and manufacturing method thereof
JP2002231852A (en) * 2001-02-02 2002-08-16 Kyocera Corp Wiring board with heat sink and electronic device using the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6390158A (en) * 1986-09-29 1988-04-21 アメリカン テレフォン アンド テレグラフ カムパニー Method of forming multilayer structure with non-flat surface
JPH0339878U (en) * 1989-08-29 1991-04-17
JPH09283918A (en) * 1996-04-18 1997-10-31 I R:Kk Cradle for printed-circuit board and its manufacture
JPH1065047A (en) * 1996-08-20 1998-03-06 Tokuyama Corp Package manufacturing method for mounting semiconductor element
JPH1079458A (en) * 1996-09-03 1998-03-24 Ibiden Co Ltd Semiconductor mounting substrate and manufacturing method thereof
JP2002231852A (en) * 2001-02-02 2002-08-16 Kyocera Corp Wiring board with heat sink and electronic device using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170654A (en) * 2008-01-16 2009-07-30 U-Ai Electronics Corp Printed circuit board and method of manufacturing printed circuit board
JP2017183649A (en) * 2016-03-31 2017-10-05 大日本印刷株式会社 Electronic device and manufacturing method thereof

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