JP2006173379A - Device and method for polishing board - Google Patents

Device and method for polishing board Download PDF

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JP2006173379A
JP2006173379A JP2004364317A JP2004364317A JP2006173379A JP 2006173379 A JP2006173379 A JP 2006173379A JP 2004364317 A JP2004364317 A JP 2004364317A JP 2004364317 A JP2004364317 A JP 2004364317A JP 2006173379 A JP2006173379 A JP 2006173379A
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polishing
substrate
outer peripheral
polishing body
moving
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Isao Nagahashi
勲 長橋
Masao Harada
正男 原田
Akihiko Uzawa
昭彦 鵜澤
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Abstract

<P>PROBLEM TO BE SOLVED: To widen a polishing area when the area of the outer periphery of a board is polished, also to reduce a production cost by means of a simple device, to polish the board at a desired curvature with a high accuracy, and to stably perform the polishing with a high accuracy and good repeatability. <P>SOLUTION: The board polishing device 1 for polishing a board D comprises a board support 2 for rotatably supporting the board D around the shaft; a polishing body 3 having a substantially disc shape and formed with a polishing part 30 in its outer periphery; a polishing body support body 4 for rotatably supporting the polishing body 3 around the shaft; and a polishing body moving part 5 for moving the polishing body support body 4. The board D and the polishing body 3 are rotated, while the polishing part 30 of the polishing body 3 is brought into contact with the area of the outer periphery of the board D by the polishing body moving part 5, and is moved along the shape of the area of the outer periphery for polishing the area of the outer periphery by means of the polishing part 30. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、基板を研磨する基板研磨装置および基板研磨方法に関するものである。   The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate.

近年、半導体基板は、配線の微細化等により、使用される金属材料も多岐にわたるようになりつつある。この金属材料は、通常CVD法で基板表面に付着させているため、基板の表面や裏面の外周縁部および外周端部(以下、「外周領域」という)への付着は避けることができない。そして、このような外周領域に付着した金属材料は、その後の工程で剥離、発塵したり、溶けて汚染物質となるため、基板が不良品となる原因となっていた。   In recent years, metal materials used for semiconductor substrates have been diversified due to miniaturization of wirings and the like. Since this metal material is usually attached to the substrate surface by the CVD method, adhesion to the outer peripheral edge portion and the outer peripheral end portion (hereinafter referred to as “peripheral region”) of the front surface and the rear surface of the substrate cannot be avoided. And since the metal material adhering to such an outer periphery area | region peels off, dust-generates in a subsequent process, or melt | dissolves and becomes a pollutant, it has become a cause by which a board | substrate becomes defective.

そこで、基板の外周領域に付着した金属材料を除去するために、例えば下記の特許文献1に示すような種々の装置が提案されている。
特開2003−257901号公報
Therefore, in order to remove the metal material adhering to the outer peripheral region of the substrate, various apparatuses as shown in Patent Document 1 below have been proposed.
JP 2003-257901 A

この特許文献1に示されているエッジ研磨装置は、「円板形ワークをチャックして軸線の回りに回転させながら、ワークを挟んで互いに対向する一対の上側エッジ用研磨部材の弧状の作業面をワークの傾斜した上側エッジに接触させ、また下側エッジ用研磨部材の弧状の作業面をワークの傾斜した下側エッジに接触させ、さらに外周面用研磨部材の弧状の作業面をワークの外周面に接触させてワークの外周領域を研磨する」装置であり、この装置で確かにワークの上側エッジ、下側エッジ及び外周面を同時に効率よく研磨することできる。   The edge polishing apparatus disclosed in Patent Document 1 is described as follows: “A circular work surface of a pair of upper edge polishing members facing each other across a workpiece while chucking a disk-shaped workpiece and rotating it around an axis. Is brought into contact with the inclined upper edge of the workpiece, the arcuate work surface of the polishing member for the lower edge is brought into contact with the inclined lower edge of the workpiece, and the arcuate work surface of the polishing member for the outer peripheral surface is further brought into contact with the outer periphery of the workpiece. It is an apparatus that polishes the outer peripheral area of a workpiece by contacting the surface. With this apparatus, the upper edge, the lower edge and the outer peripheral surface of the workpiece can be polished efficiently at the same time.

しかし、上記のエッジ研磨装置では、弧状の作業面をワークに接触させて研磨しているため、外周面付近のエッジまでは研磨できるものの、エッジからより基板中心方向に入りこんだ、平坦な面は研磨することができない。   However, in the above-described edge polishing apparatus, the arc-shaped work surface is in contact with the workpiece for polishing, so that the edge near the outer peripheral surface can be polished, but the flat surface that penetrates more toward the substrate center from the edge is It cannot be polished.

一方、基板の外周面やエッジだけでなく、エッジからより基板中心方向に入りこんだ平坦な面も研磨し、研磨領域を広げて上記の不良要因を確実に除去したいという要望が、近年高まっている。   On the other hand, in recent years, there is an increasing demand for polishing not only the outer peripheral surface and edge of the substrate, but also the flat surface that penetrates from the edge toward the center of the substrate, and widens the polishing area to reliably remove the above-mentioned defect factors. .

また、上記のエッジ研磨装置では、一対の上側エッジ用研磨部材、下側エッジ用研磨部材および外周面用研磨部材の4つの研磨部材が必要であり、装置が複雑で、製造コストも高くなっていた。   Further, the above-described edge polishing apparatus requires four polishing members, ie, a pair of upper edge polishing member, lower edge polishing member and outer peripheral surface polishing member, and the apparatus is complicated and the manufacturing cost is high. It was.

また、上記のエッジ研磨装置では、各研磨部材の弧状の作業面をワークのエッジや外周面に線接触させているため、作業面とワークとの間では、ワークの形状が異なる毎に、接触面積が異なり、また面圧も異なってしまう。したがって、研磨加工条件が不安定となり、精度良い研磨を再現性良く安定して行うことができない。さらにワークが弧状の作業面に規制され、弧状作業面と同じ曲率に加工されてしまい、ワークのエッジや外周面を所望の曲率に加工できないという問題点も有していた。   Further, in the above edge polishing apparatus, the arc-shaped work surface of each polishing member is in line contact with the edge or outer peripheral surface of the work, so that the work surface and the work are in contact each time the work shape is different. The area is different and the surface pressure is also different. Therefore, the polishing process conditions become unstable, and accurate polishing cannot be performed stably with good reproducibility. Furthermore, the workpiece is restricted by the arc-shaped work surface and is processed to have the same curvature as that of the arc-shaped work surface, and there is a problem that the edge and outer peripheral surface of the workpiece cannot be processed to a desired curvature.

この発明は上記に鑑み提案されたもので、基板の外周領域を研磨する場合に、研磨領域を広げることができ、また簡単な装置で製造コストも低減することができ、基板を所望の曲率で高精度に研磨でき、さらにその高精度の研磨を再現性よく安定して行うことができる基板研磨装置を提供することを目的とする。   The present invention has been proposed in view of the above, and when the outer peripheral region of the substrate is polished, the polishing region can be widened, the manufacturing cost can be reduced with a simple apparatus, and the substrate can be formed with a desired curvature. It is an object of the present invention to provide a substrate polishing apparatus that can perform high-precision polishing and can perform the high-precision polishing stably with high reproducibility.

上記目的を達成するために、請求項1に記載の発明は、基板を研磨する基板研磨装置において、上記基板を軸回りに回転自在に支持する基板支持部と、略円盤状でその外周に研磨部が形成された研磨体と、上記研磨体を軸回りに回転自在に支持する研磨体支持部と、上記研磨体支持部を移動させる研磨体移動部と、を備え、上記基板および研磨体を回転させつつ、上記研磨体移動部により研磨体の研磨部を基板の外周縁部および外周端部(以下「外周領域」という)に接触させかつその外周領域の形状に沿って移動させ、研磨部で外周領域を研磨する、ことを特徴としている。   In order to achieve the above object, according to a first aspect of the present invention, there is provided a substrate polishing apparatus for polishing a substrate, a substrate support portion for rotatably supporting the substrate around an axis, and a substantially disc-shaped polishing on the outer periphery thereof. A polishing body having a portion formed thereon, a polishing body support section that supports the polishing body rotatably about an axis, and a polishing body moving section that moves the polishing body support section. While rotating, the polishing body moving section brings the polishing section of the polishing body into contact with the outer peripheral edge and outer peripheral edge (hereinafter referred to as “outer peripheral area”) of the substrate and moves along the shape of the outer peripheral area. The outer peripheral region is polished by the above.

請求項2に記載の発明は、上記した請求項1に記載の発明の構成に加えて、上記研磨体移動部は、研磨体を基板に対して垂直方向に移動させる垂直移動部と、研磨体を基板の所定の径方向に移動させる径方向移動部と、を備えることを特徴としている。   According to a second aspect of the invention, in addition to the configuration of the first aspect of the invention described above, the polishing body moving unit includes a vertical moving unit that moves the polishing body in a direction perpendicular to the substrate, and a polishing body. And a radial direction moving part for moving the substrate in a predetermined radial direction of the substrate.

請求項3に記載の発明は、上記した請求項1または2に記載の発明の構成に加えて、上記研磨体移動部は、研磨体を基板の上記所定の径方向とは直交する方向に移動させる直交方向移動部、を備えることを特徴としている。   According to a third aspect of the invention, in addition to the configuration of the first or second aspect of the invention described above, the polishing body moving section moves the polishing body in a direction perpendicular to the predetermined radial direction of the substrate. An orthogonal direction moving unit is provided.

また、請求項4に記載の発明は、上記した請求項1から3の何れか1項に記載発明の構成に加えて、上記研磨体移動部による研磨体の研磨部の移動は、基板の一方の面の外周縁部から外周端部を経由し他方の面の外周縁部に向かう第1の移動と、その逆方向の他方の面の外周縁部から外周端面を経由して一方の面の外周縁部に向かう第2の移動との組み合わせである、ことを特徴としている。   According to a fourth aspect of the present invention, in addition to the configuration of any one of the first to third aspects, the movement of the polishing portion of the polishing body by the polishing body moving portion is performed on one side of the substrate. The first movement from the outer peripheral edge of the other surface to the outer peripheral edge of the other surface through the outer peripheral edge, and the other surface of the other surface from the outer peripheral edge of the other surface in the opposite direction via the outer peripheral edge It is a combination with the second movement toward the outer peripheral edge.

さらに、請求項5に記載の発明は、基板を研磨する基板研磨方法において、上記基板と、略円盤状でその外周に研磨部が形成された研磨体とを回転させつつ、研磨体の研磨部を基板の外周領域に接触させかつその外周領域の形状に沿って移動させ、研磨部で外周領域を研磨する、ことを特徴としている。   Furthermore, the invention according to claim 5 is a substrate polishing method for polishing a substrate, wherein the polishing portion of the polishing body is rotated while rotating the substrate and a polishing body having a substantially disc shape and a polishing portion formed on the outer periphery thereof. Is brought into contact with the outer peripheral region of the substrate and moved along the shape of the outer peripheral region, and the outer peripheral region is polished by the polishing portion.

この発明の基板研磨装置では、略円盤状の研磨体の外周に形成されている研磨部を基板の外周領域に接触させかつその外周領域の形状に沿って移動させつつ、外周領域を研磨するようにしたので、外周より基板中心方向に入りこんだ面も自在に研磨可能となる。この面は平坦面であっても、斜面であってもよく、またその表面に凹凸があってもよい。このように研磨領域を広げることで付着物をより広範囲に除くことができ、したがってその付着物に起因して発生していた不良を確実に除去することができる。   In the substrate polishing apparatus of this invention, the outer peripheral region is polished while the polishing portion formed on the outer periphery of the substantially disc-shaped polishing body is brought into contact with the outer peripheral region of the substrate and moved along the shape of the outer peripheral region. As a result, it is possible to freely polish the surface entering the center of the substrate from the outer periphery. This surface may be a flat surface or an inclined surface, and the surface may be uneven. By widening the polishing area in this manner, the deposits can be removed in a wider range, and therefore, defects caused by the deposits can be reliably removed.

また、研磨体を基板に接触させるだけでよいため、簡単な装置で研磨することができ、製造コストも低減することができる。   Further, since it is only necessary to bring the polishing body into contact with the substrate, polishing can be performed with a simple apparatus, and the manufacturing cost can be reduced.

さらに、研磨部を基板の外周領域の形状に沿って移動させるので、どのような基板の形状にも追随させることができ、したがって、基板を所望の曲率で高精度に研磨でき、さらにその高精度の研磨を再現性よく安定して行うことができる。   Furthermore, since the polishing part is moved along the shape of the outer peripheral region of the substrate, it can follow any shape of the substrate. Therefore, the substrate can be polished with a desired curvature with high accuracy, and the high accuracy can be achieved. Can be stably performed with good reproducibility.

先ずこの発明の第1の実施形態を図面に基づいて詳細に説明する。   First, a first embodiment of the present invention will be described in detail with reference to the drawings.

図1はこの発明の基板研磨装置の平面図、図2は図1のA−A断面図、図3は図1のB−B断面図である。なお、図3における研磨体3は、図1の研磨体3をY方向に移動した状態となっている。これらの図において、この発明の基板研磨装置1は、基台91,92上に構築され、基板Dを軸回りに回転自在に支持する基板支持部2と、略円盤状でその外周に研磨部30が形成された研磨体3と、その研磨体3を軸回りに回転自在に支持する研磨体支持部4と、その研磨体支持部4を移動させる研磨体移動部5とを備えている。   1 is a plan view of a substrate polishing apparatus according to the present invention, FIG. 2 is a cross-sectional view taken along line AA in FIG. 1, and FIG. 3 is a cross-sectional view taken along line BB in FIG. Note that the polishing body 3 in FIG. 3 is in a state in which the polishing body 3 in FIG. 1 is moved in the Y direction. In these drawings, a substrate polishing apparatus 1 according to the present invention is constructed on bases 91 and 92, and has a substrate support portion 2 that supports a substrate D so as to be rotatable about an axis, and a substantially disc-shaped polishing portion on the outer periphery thereof. A polishing body 3 on which 30 is formed, a polishing body support portion 4 that supports the polishing body 3 so as to be rotatable about an axis, and a polishing body moving portion 5 that moves the polishing body support portion 4 are provided.

そして、研磨体移動部5は、研磨体3を基板Dに対して垂直方向に移動させる垂直移動部6と、研磨体3を基板Dの所定の径方向に移動させる径方向移動部7と、研磨体3を基板Dの所定の径方向とは直交する方向に移動させる直交方向移動部8とを有している。   The polishing body moving unit 5 includes a vertical moving unit 6 that moves the polishing body 3 in a direction perpendicular to the substrate D, a radial moving unit 7 that moves the polishing body 3 in a predetermined radial direction of the substrate D, An orthogonal direction moving unit 8 that moves the polishing body 3 in a direction orthogonal to a predetermined radial direction of the substrate D is provided.

上記の基板Dは、例えば略円板状の半導体ウェハであり、図4(a)(b)に示すように、表面側のパターン形成部D0と、そのパターン形成部D0より外周側の外周縁部D1と、外周端部D2と、裏面の外周縁部D3とを有している。外周縁部D1,D3は平坦であってもよいし、斜面であってもよい。またその表面に凹凸があってもよい。外周端部D2は、通常は図4(a)のように曲率を有しているが、図4(b)のように斜面と垂直面とで形成されていてもよい。またその表面に凹凸があってもよい。以下の説明では、表面の外周縁部D1、外周端部D2および裏面の外周縁部D3を合わせた領域を「外周領域」と称することとする。   The substrate D is, for example, a substantially disk-shaped semiconductor wafer. As shown in FIGS. 4A and 4B, the surface-side pattern forming portion D0 and the outer peripheral edge on the outer peripheral side from the pattern forming portion D0. It has a portion D1, an outer peripheral end D2, and an outer peripheral edge D3 on the back surface. The outer peripheral edge portions D1 and D3 may be flat or may be slopes. Further, the surface may be uneven. The outer peripheral end D2 usually has a curvature as shown in FIG. 4A, but may be formed of a slope and a vertical surface as shown in FIG. 4B. Further, the surface may be uneven. In the following description, a region including the outer peripheral edge portion D1, the outer peripheral edge portion D2, and the outer peripheral edge portion D3 on the back surface is referred to as an “outer peripheral region”.

上記の基板支持部2は、図2および図3に示すように、基台91上に設けられ、基台91に立設された支持用シャフト21と、その支持用シャフト21の頂部に設けられた基板受け部22と、回転駆動部23とを有している。支持用シャフト21は、基台91に固定されている円筒部21aとその円筒部21aの中空部にベアリング機構で回転自在に設けられている軸部21bとを有し、この軸部21bには、回転駆動部23のモータ23aの回転がギヤ列23bを介して伝達され、それによって基板受け部22が回転する。また軸部21bには垂直方向に孔21cが形成され、その孔21cの下方から空気が吸引され、その吸引力によって基板受け部22にセッティングされた基板Dがチャッキングされ固定される。   As shown in FIGS. 2 and 3, the substrate support portion 2 is provided on a base 91, a support shaft 21 erected on the base 91, and a top portion of the support shaft 21. A substrate receiving portion 22 and a rotation driving portion 23 are provided. The supporting shaft 21 has a cylindrical portion 21a fixed to the base 91 and a shaft portion 21b that is rotatably provided by a bearing mechanism in a hollow portion of the cylindrical portion 21a. The rotation of the motor 23a of the rotation drive unit 23 is transmitted through the gear train 23b, whereby the substrate receiving unit 22 rotates. A hole 21c is formed in the shaft portion 21b in the vertical direction, air is sucked from below the hole 21c, and the substrate D set in the substrate receiving portion 22 is chucked and fixed by the suction force.

基板Dは、基板受け部22にセッティングされた状態で、基板受け部22に対して、少なくとも外周領域がはみ出すようになる(図2、図3参照)。   When the substrate D is set in the substrate receiving portion 22, at least the outer peripheral region protrudes from the substrate receiving portion 22 (see FIGS. 2 and 3).

基台91には、位置決め部2Aが3カ所に設けられている。図1では2カ所のみ図示したが、図示されていない残り1カ所の位置決め部2Aが、例えば研磨体支持部4の位置の近傍に配置されている。位置決め部2Aは、その頂部の回転自在な円柱体201が基板Dの外周面に当接し、基板Dのチャッキング時の位置決めを3方向から高精度に行う。研磨時には基板Dから離れた位置に退避する。なお、この位置決め部2Aは、3カ所だけでなく、必要に応じて2カ所、あるいは4カ所以上設けるようにしてもよい。   The base 91 is provided with three positioning portions 2A. Although only two places are illustrated in FIG. 1, the remaining one positioning part 2 </ b> A (not shown) is disposed, for example, in the vicinity of the position of the polishing body support part 4. In the positioning portion 2A, a rotatable cylindrical body 201 at the top thereof abuts on the outer peripheral surface of the substrate D, and positioning at the time of chucking the substrate D is performed with high accuracy from three directions. During polishing, it is retracted to a position away from the substrate D. In addition, this positioning part 2A may be provided not only at three places but also at two places or four or more places as required.

次に上記の研磨体移動部5および研磨体支持部4について説明する。   Next, the polishing body moving unit 5 and the polishing body support unit 4 will be described.

研磨体移動部5は、上記したように、垂直移動部6と径方向移動部7と直交方向移動部8とから構成されている。直交方向移動部8は、基台92上に設けられ、レール8a,8b、サーボモータ81、ボールネジ82、および直交方向移動テーブル83を備えている。この構成により、サーボモータ81が回転しボールネジ82が回転すると、ナット状移動体を介して直交方向移動テーブル83が、レール8a,8bに沿って図中Y方向に移動する。   As described above, the polishing body moving unit 5 includes the vertical moving unit 6, the radial direction moving unit 7, and the orthogonal direction moving unit 8. The orthogonal direction moving unit 8 is provided on a base 92 and includes rails 8 a and 8 b, a servo motor 81, a ball screw 82, and an orthogonal direction moving table 83. With this configuration, when the servo motor 81 rotates and the ball screw 82 rotates, the orthogonal direction moving table 83 moves in the Y direction in the figure along the rails 8a and 8b via the nut-like moving body.

上記の径方向移動部7は、直交方向移動テーブル83上に設けられ、レール7a,7b、サーボモータ71、ボールネジ72および径方向移動テーブル73を備えている。この構成により、サーボモータ71が回転しボールネジ72が回転すると、ナット状移動体74を介して径方向移動テーブル73が、レール7a,7bに沿って図中X方向(所定の径方向)に移動する。   The radial movement unit 7 is provided on the orthogonal movement table 83 and includes rails 7 a and 7 b, a servo motor 71, a ball screw 72, and a radial movement table 73. With this configuration, when the servo motor 71 rotates and the ball screw 72 rotates, the radial movement table 73 moves along the rails 7a and 7b in the X direction (predetermined radial direction) along the rails 7a and 7b. To do.

上記の垂直移動部6は、径方向移動テーブル73上に立設された機枠60に設けられる。この垂直移動部6は、レール6a,6b、サーボモータ61、ボールネジ62、ナット状移動体64および垂直方向移動テーブル63を備えている。この構成により、サーボモータ61が回転しボールネジ62が回転すると、ナット状移動体64を介して垂直方向移動テーブル63が、レール6a,6bに沿って図中Z方向に移動する。そして、垂直方向移動テーブル63には水平方向に横機枠65が設けられ、この横機枠65の水平方向先端側には研磨体支持部4が設けられ、この研磨体支持部4によって研磨体3が回転自在に支持されている。すなわち、横機枠65にはモータ66が配置され、モータ66の回転がプーリを介して研磨体3に伝達され、研磨体3が回転する。   The vertical moving unit 6 is provided in a machine frame 60 erected on the radial moving table 73. The vertical moving unit 6 includes rails 6 a and 6 b, a servo motor 61, a ball screw 62, a nut-like moving body 64, and a vertical moving table 63. With this configuration, when the servo motor 61 rotates and the ball screw 62 rotates, the vertical movement table 63 moves in the Z direction in the figure along the rails 6a and 6b via the nut-like moving body 64. The vertical moving table 63 is provided with a horizontal machine frame 65 in the horizontal direction, and a polishing body support portion 4 is provided at the horizontal direction front end side of the horizontal machine frame 65. 3 is rotatably supported. That is, a motor 66 is disposed in the horizontal machine frame 65, and the rotation of the motor 66 is transmitted to the polishing body 3 via the pulley, and the polishing body 3 rotates.

研磨体3は、上記したように、略円盤状でその外周に研磨部30が形成されている。この研磨部30は、例えば研磨布や砥石の表面である。研磨時には研磨部30と基板Dとの間に研磨液が供給される。   As described above, the polishing body 3 has a substantially disk shape, and the polishing portion 30 is formed on the outer periphery thereof. The polishing unit 30 is, for example, the surface of a polishing cloth or a grindstone. During polishing, a polishing liquid is supplied between the polishing unit 30 and the substrate D.

また、基板研磨装置1には、基板Dの少し上方に高さ位置計測センサS1が、また基板Dの外周面から少し離れた位置に偏心量計測センサS2が配置され、高さ位置計測センサS1は、基板受け部22にセッティングされた基板Dの正確な高さ位置を計測し、偏心量計測センサS2は、基板受け部22にセッティングされた基板Dが回転する際の径方向の偏心量(振れ量)を計測する。   In the substrate polishing apparatus 1, a height position measurement sensor S1 is disposed slightly above the substrate D, and an eccentricity measurement sensor S2 is disposed at a position slightly away from the outer peripheral surface of the substrate D. The height position measurement sensor S1 Measures the exact height position of the substrate D set on the substrate receiving portion 22, and the eccentricity measuring sensor S2 detects the amount of eccentricity in the radial direction when the substrate D set on the substrate receiving portion 22 rotates ( Measure runout).

基板研磨装置1の各部の動作は、ここでは図示されていない制御装置を用いて行われる。すなわち、制御装置は、モータ23a,66、サーボモータ61,71,81に指令してこれらのモータを駆動して所定の動作を行わせ、また基板Dをチャッキングする時の吸引動作、研磨液供給動作等の制御も行う。   The operation of each part of the substrate polishing apparatus 1 is performed using a control device not shown here. That is, the control device instructs the motors 23a and 66 and the servo motors 61, 71, and 81 to drive these motors to perform predetermined operations, and also performs the suction operation when chucking the substrate D, the polishing liquid It also controls the supply operation.

上記構成の基板研磨装置1において、外周領域の研磨は次のように行われる。 先ず、基板Dの外周領域の形状をプロファイラ(表面形状測定装置)を用いて計測し、その形状データを制御装置に入力する。   In the substrate polishing apparatus 1 configured as described above, the outer peripheral region is polished as follows. First, the shape of the outer peripheral region of the substrate D is measured using a profiler (surface shape measuring device), and the shape data is input to the control device.

次に、基板Dを基板受け部22にチャッキングし、位置決め部2Aで位置決めしてセッティングし、その状態で、高さ位置計測センサS1を用いて基板Dの高さ位置を高精度に計測し、偏心量計測センサS2を用いて基板回転時の基板Dの振れ量を計測し、制御装置にフィードバックする。   Next, the substrate D is chucked to the substrate receiving portion 22, positioned and set by the positioning portion 2A, and in this state, the height position of the substrate D is measured with high accuracy using the height position measuring sensor S1. Then, the deflection amount of the substrate D during the substrate rotation is measured using the eccentricity measuring sensor S2, and fed back to the control device.

制御装置では、プロファイラで求めた形状データから研磨体3の外周領域の研磨を行うための各部の軌跡(XYZ方向での軌跡)を求め、さらにその軌跡に、高さ位置計測センサS1および偏心量計測センサS2からの諸データを加味して補正を加え、研磨体3の高精度の軌跡を求める。   In the control device, the trajectory of each part (trajectory in the XYZ directions) for polishing the outer peripheral region of the polishing body 3 is obtained from the shape data obtained by the profiler, and the height position measurement sensor S1 and the eccentricity amount are further included in the trajectory. Correction is performed in consideration of various data from the measurement sensor S2, and a highly accurate locus of the polishing body 3 is obtained.

その後、制御装置は、基板Dおよび研磨体3を回転させるとともに、求めた軌跡データに従って、研磨体移動部5(垂直移動部6、径方向移動部7および直交方向移動部8)を動作させる。その結果、基板Dと研磨部30とは接触しつつ、研磨体3が、例えば図5、図6に示すように、軌跡Pに従ってM位置から外周領域に沿ってN位置までの第1の移動を行い、また軌跡Pに従ってN位置から外周領域に沿ってM位置まで第2の移動を行い、少なくともその何れかの移動を行うことで、また多くの場合は第1の移動と第2の移動とを組み合わせて行うことにより、外周領域の研磨が行われる。なお、図5は研磨体の直径が大きい場合を、図6は研磨体の直径が小さい場合をそれぞれ示している。   Thereafter, the control device rotates the substrate D and the polishing body 3 and operates the polishing body moving unit 5 (vertical moving unit 6, radial moving unit 7 and orthogonal direction moving unit 8) according to the obtained trajectory data. As a result, while the substrate D and the polishing unit 30 are in contact with each other, the polishing body 3 performs the first movement from the M position to the N position along the outer peripheral area according to the locus P as shown in FIGS. 5 and 6, for example. And a second movement from the N position to the M position along the outer peripheral area according to the trajectory P, and at least one of the movements. In many cases, the first movement and the second movement are performed. The outer peripheral region is polished by performing in combination. FIG. 5 shows a case where the diameter of the polishing body is large, and FIG. 6 shows a case where the diameter of the polishing body is small.

図7は本発明での研磨範囲の説明図である。本発明では、研磨体3の外周に形成されている研磨部30を基板Dに接触させつつ研磨するようにしたので、基板Dの外周領域での研磨範囲Wは、図7(a)に示すような外周端部D2だけでなく、図7(b)に示すような外周縁部D1,D3を含めた範囲が研磨可能となり、さらには図7(c)に示すような、より基板中心方向に入りこんで平坦な領域がより広くなった外周縁部D1,D3も自在に研磨可能となる。また、図7(d)に示すように、基板Dの表面と裏面とで研磨範囲が異なる場合でも自在に対応することができる。なお、特許文献1に示したような、弧状の作動面を用いるエッジ研磨装置では、図7(a)の外周端部の研磨に対応できるのみである。   FIG. 7 is an explanatory diagram of the polishing range in the present invention. In the present invention, since the polishing portion 30 formed on the outer periphery of the polishing body 3 is polished while being in contact with the substrate D, the polishing range W in the outer peripheral region of the substrate D is shown in FIG. In addition to the outer peripheral edge portion D2, the range including the outer peripheral edge portions D1 and D3 as shown in FIG. 7B can be polished, and further, as shown in FIG. The outer peripheral edge portions D1 and D3 that have penetrated and the flat area becomes wider can be polished freely. Further, as shown in FIG. 7D, even when the polishing range is different between the front surface and the back surface of the substrate D, it is possible to cope with it freely. Note that the edge polishing apparatus using an arcuate working surface as shown in Patent Document 1 can only cope with the polishing of the outer peripheral end of FIG.

以上述べたように、この発明の基板研磨装置1では、略円盤状の研磨体3の外周に形成されている研磨部30を基板Dの外周領域に接触させかつその外周領域の形状に沿って移動させつつ、外周領域を研磨するようにしたので、外周より基板中心方向に入りこんだ面も自在に研磨可能となる。この面は平坦面であっても、斜面であってもよく、またその表面に凹凸があってもよい。このように研磨領域を広げることで付着物をより広範囲に除くことができ、したがってその付着物に起因して発生していた不良を確実に除去することができる。   As described above, in the substrate polishing apparatus 1 of the present invention, the polishing portion 30 formed on the outer periphery of the substantially disc-shaped polishing body 3 is brought into contact with the outer peripheral region of the substrate D and along the shape of the outer peripheral region. Since the outer peripheral region is polished while being moved, the surface entering the center of the substrate from the outer periphery can be freely polished. This surface may be a flat surface or an inclined surface, and the surface may be uneven. By widening the polishing area in this manner, the deposits can be removed in a wider range, and therefore, defects caused by the deposits can be reliably removed.

また、研磨体3を基板Dに接触させるだけでよいため、簡単な装置で研磨することができ、製造コストも低減することができる。   Moreover, since it is only necessary to bring the polishing body 3 into contact with the substrate D, polishing can be performed with a simple apparatus, and the manufacturing cost can be reduced.

さらに、研磨部30を基板Dの外周領域の形状に沿って移動させるので、どのような基板の形状にも追随させることができ、したがって、基板Dを所望の曲率で高精度に研磨でき、さらにその高精度の研磨を再現性よく安定して行うことができる。   Further, since the polishing unit 30 is moved along the shape of the outer peripheral region of the substrate D, it is possible to follow any shape of the substrate, and therefore, the substrate D can be polished with a desired curvature with high accuracy. The high-precision polishing can be performed stably with good reproducibility.

次にこの発明の第2の実施形態を説明する。   Next, a second embodiment of the present invention will be described.

図8はこの発明の第2の実施形態の説明図である。この第2の実施形態では研磨体3を基板Dの表側と裏側の双方に配置している。上記第1の実施形態において、研磨体3を図1の状態からY方向に移動させた場合は図3の状態になるが、この図3において、基板Dの表側と裏側とを研磨する場合は、それぞれの位置に研磨体3を移動させて順に行うこととなる。これに対して、図8に示す第2の実施形態では、研磨体3を基板Dの表側と裏側の双方に配置し、表側の研磨と裏側の研磨を同時に行えるようにしている。したがって、より効率よく研磨を行えるようになる。   FIG. 8 is an explanatory diagram of the second embodiment of the present invention. In the second embodiment, the polishing body 3 is arranged on both the front side and the back side of the substrate D. In the first embodiment, when the polishing body 3 is moved in the Y direction from the state of FIG. 1, the state of FIG. 3 is obtained. In FIG. 3, when the front side and the back side of the substrate D are polished. Then, the polishing body 3 is moved to each position, and the process is performed in order. On the other hand, in the second embodiment shown in FIG. 8, the polishing body 3 is arranged on both the front side and the back side of the substrate D so that the front side polishing and the back side polishing can be performed simultaneously. Therefore, polishing can be performed more efficiently.

図1はこの発明の基板研磨装置の平面図である。FIG. 1 is a plan view of a substrate polishing apparatus according to the present invention. 図1のA−A断面図である。It is AA sectional drawing of FIG. 図1のB−B断面図である。It is BB sectional drawing of FIG. 基板の外周領域の説明図である。It is explanatory drawing of the outer peripheral area | region of a board | substrate. 研磨体の軌跡の説明図である。It is explanatory drawing of the locus | trajectory of a grinding | polishing body. この発明での研磨領域の説明図である。It is explanatory drawing of the grinding | polishing area | region in this invention. この発明での研磨領域の説明図である。It is explanatory drawing of the grinding | polishing area | region in this invention. この発明の第2の実施形態の説明図である。It is explanatory drawing of 2nd Embodiment of this invention.

符号の説明Explanation of symbols

1 基板研磨装置
2 基板支持部
2A 位置決め部
21 支持用シャフト
21a 円筒部
21b 軸部
21c 孔
22 基板受け部
23 回転駆動部
23a モータ
23b ギヤ列
201 円柱体
3 研磨体
30 研磨部
4 研磨体支持部
5 研磨体移動部
6 垂直移動部
6a,6b レール
60 機枠
61 サーボモータ
62 ボールネジ
63 垂直方向移動テーブル
64 ナット状移動体
65 横機枠
66 モータ
7 径方向移動部
7a,7b レール
71 サーボモータ
72 ボールネジ
73 径方向移動テーブル
74 ナット状移動体
8 直交方向移動部
8a,8b レール
81 サーボモータ
82 ボールネジ
83 直交方向移動テーブル
91 基台
92 基台
D 基板
D0 パターン形成部
D1,D3 外周縁部
D2 外周端部
P 軌跡
S1 高さ位置計測センサ
S2 偏心量計測センサ
W 研磨範囲
X 所定の径方向
Y 所定の径方向とは直交する方向
Z 垂直方向
DESCRIPTION OF SYMBOLS 1 Substrate polisher 2 Substrate support part 2A Positioning part 21 Support shaft 21a Cylindrical part 21b Shaft part 21c Hole 22 Substrate receiving part 23 Rotation drive part 23a Motor 23b Gear train 201 Cylindrical body 3 Polishing body 30 Polishing part 4 Polishing body support part DESCRIPTION OF SYMBOLS 5 Polishing body moving part 6 Vertical moving part 6a, 6b Rail 60 Machine frame 61 Servo motor 62 Ball screw 63 Vertical direction moving table 64 Nut-like moving body 65 Horizontal machine frame 66 Motor 7 Radial direction moving part 7a, 7b Rail 71 Servo motor 72 Ball screw 73 Radial direction moving table 74 Nut-like moving body 8 Orthogonal direction moving part 8a, 8b Rail 81 Servo motor 82 Ball screw 83 Orthogonal direction moving table 91 Base 92 Base base D Substrate D0 Pattern forming part D1, D3 Outer peripheral edge D2 Outer periphery Edge P Trajectory S1 Height position measuring center S2 eccentricity measurement sensor W polishing range X direction Z perpendicular direction orthogonal to the predetermined radial Y predetermined radial

Claims (5)

基板を研磨する基板研磨装置において、
上記基板を軸回りに回転自在に支持する基板支持部と、
略円盤状でその外周に研磨部が形成された研磨体と、
上記研磨体を軸回りに回転自在に支持する研磨体支持部と、
上記研磨体支持部を移動させる研磨体移動部と、を備え、
上記基板および研磨体を回転させつつ、上記研磨体移動部により研磨体の研磨部を基板の外周縁部および外周端部(以下「外周領域」という)に接触させかつその外周領域の形状に沿って移動させ、研磨部で外周領域を研磨する、
ことを特徴とする基板研磨装置。
In a substrate polishing apparatus for polishing a substrate,
A substrate support section for supporting the substrate rotatably about an axis;
A polishing body having a substantially disc shape and a polishing portion formed on the outer periphery thereof;
A polishing body support for supporting the polishing body rotatably about an axis;
A polishing body moving section for moving the polishing body support section,
While rotating the substrate and the polishing body, the polishing body moving portion brings the polishing portion of the polishing body into contact with the outer peripheral edge portion and the outer peripheral edge portion (hereinafter referred to as “outer peripheral region”) of the substrate, and follows the shape of the outer peripheral region. And move the outer peripheral area with the polishing part.
A substrate polishing apparatus.
上記研磨体移動部は、
研磨体を基板に対して垂直方向に移動させる垂直移動部と、
研磨体を基板の所定の径方向に移動させる径方向移動部と、を備える請求項1に記載の基板研磨装置。
The polishing body moving part is
A vertical movement unit for moving the polishing body in a direction perpendicular to the substrate;
The substrate polishing apparatus according to claim 1, further comprising a radial direction moving unit that moves the polishing body in a predetermined radial direction of the substrate.
上記研磨体移動部は、
研磨体を基板の上記所定の径方向とは直交する方向に移動させる直交方向移動部、を備える請求項2に記載の基板研磨装置。
The polishing body moving part is
The substrate polishing apparatus according to claim 2, further comprising: an orthogonal direction moving unit that moves the polishing body in a direction orthogonal to the predetermined radial direction of the substrate.
上記研磨体移動部による研磨体の研磨部の移動は、基板の一方の面の外周縁部から外周端部を経由し他方の面の外周縁部に向かう第1の移動と、その逆方向の他方の面の外周縁部から外周端面を経由して一方の面の外周縁部に向かう第2の移動との組み合わせである、請求項1から3の何れかに記載の基板研磨装置。   The movement of the polishing portion of the polishing body by the polishing body moving portion is the first movement from the outer peripheral edge portion of one surface of the substrate to the outer peripheral edge portion of the other surface through the outer peripheral edge portion, and in the opposite direction. The substrate polishing apparatus according to any one of claims 1 to 3, which is a combination of a second movement from the outer peripheral edge portion of the other surface to the outer peripheral edge portion of the one surface via the outer peripheral end surface. 基板を研磨する基板研磨方法において、
上記基板と、略円盤状でその外周に研磨部が形成された研磨体とを回転させつつ、研磨体の研磨部を基板の外周領域に接触させかつその外周領域の形状に沿って移動させ、研磨部で外周領域を研磨する、
ことを特徴とする基板研磨方法。
In a substrate polishing method for polishing a substrate,
While rotating the substrate and a polishing body having a substantially disc shape and a polishing portion formed on the outer periphery thereof, the polishing portion of the polishing body is brought into contact with the outer peripheral region of the substrate and moved along the shape of the outer peripheral region, Polish the outer peripheral area with the polishing part,
A substrate polishing method characterized by the above.
JP2004364317A 2004-12-16 2004-12-16 Device and method for polishing board Pending JP2006173379A (en)

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Country Link
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11345788A (en) * 1998-05-29 1999-12-14 Shin Etsu Handotai Co Ltd Working method of sheet edge section and working machine
JP2000003890A (en) * 1998-04-13 2000-01-07 Nippei Toyama Corp Method of chamfering wafer
JP2005347531A (en) * 2004-06-03 2005-12-15 Disco Abrasive Syst Ltd Wafer cleaning equipment and wafer cleaning method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000003890A (en) * 1998-04-13 2000-01-07 Nippei Toyama Corp Method of chamfering wafer
JPH11345788A (en) * 1998-05-29 1999-12-14 Shin Etsu Handotai Co Ltd Working method of sheet edge section and working machine
JP2005347531A (en) * 2004-06-03 2005-12-15 Disco Abrasive Syst Ltd Wafer cleaning equipment and wafer cleaning method

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