JP2010172975A - Polishing apparatus - Google Patents

Polishing apparatus Download PDF

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JP2010172975A
JP2010172975A JP2009015380A JP2009015380A JP2010172975A JP 2010172975 A JP2010172975 A JP 2010172975A JP 2009015380 A JP2009015380 A JP 2009015380A JP 2009015380 A JP2009015380 A JP 2009015380A JP 2010172975 A JP2010172975 A JP 2010172975A
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polishing
polished
head
polishing pad
pad
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JP2010172975A5 (en
JP5348531B2 (en
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Naoki Asada
直樹 浅田
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Nikon Corp
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Nikon Corp
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing apparatus capable of precisely polishing a plurality of workpieces to be polished at the same time. <P>SOLUTION: The polishing apparatus 1 includes a polishing pad 11 having a polishing surface capable of polishing the workpieces 5, 6; a polishing platen capable of rotating while holding the polishing pad 11 with its polishing surface facing up; and a plurality of head portions 20a-20c disposed above the polishing platen and holding the workpieces 5, 6 with their surfaces to be polished facing down. The polishing pad 11 is configured to be able to simultaneously polish the plurality of workpieces 5, 6 individually held by the plurality of head portions 20a-20c, and is provided with head drive mechanisms 30a-30c which move each of the plurality of head portions 20a-20c in a two-dimensional direction substantially parallel to the polishing surface of the polishing pad 11. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、ガラス基板や半導体ウェハ等の研磨対象物を研磨する研磨装置に関する。   The present invention relates to a polishing apparatus for polishing an object to be polished such as a glass substrate or a semiconductor wafer.

研磨対象物を研磨する研磨装置としてCMP装置が例示される。CMP装置は、化学的機械的研磨(CMP:Chemical Mechanical Polishing)により研磨対象物の表面を超精密に研磨加工する技術として、ガラス基板や半導体ウェハ等の研磨加工に広く利用されている。このような研磨装置では、チャックに保持された研磨対象物と研磨ヘッドに装着された研磨パッドとを相対回転させて押接し、研磨対象物と研磨パッドとの当接部に研磨内容に応じたスラリー(Slurry)を供給して化学的・機械的な研磨作用を生じさせ、研磨対象物の表面を平坦に研磨加工する(例えば、特許文献1を参照)。   A CMP apparatus is exemplified as a polishing apparatus for polishing an object to be polished. A CMP apparatus is widely used for polishing a glass substrate, a semiconductor wafer, and the like as a technique for polishing a surface of an object to be polished with high precision by chemical mechanical polishing (CMP). In such a polishing apparatus, the object to be polished held by the chuck and the polishing pad mounted on the polishing head are relatively rotated and pressed, and a contact portion between the object to be polished and the polishing pad corresponds to the polishing content. Slurry is supplied to cause a chemical / mechanical polishing action, and the surface of the object to be polished is polished flat (see, for example, Patent Document 1).

特開2006−319249号公報JP 2006-319249 A

このような研磨装置には、スループットを向上させるため、研磨パッドを大きくして複数の研磨対象物を同時に研磨加工する研磨装置がある。しかしながら、このような研磨装置においては、複数の研磨対象物に対して同様の研磨条件で研磨を行っていたため、ガラス基板のように研磨加工前の初期形状が比較的大きく異なる研磨対象物においては、所望の研磨精度を得ることができない場合があった。   Among such polishing apparatuses, there is a polishing apparatus that increases a polishing pad and simultaneously polishes a plurality of objects to be polished in order to improve throughput. However, in such a polishing apparatus, since polishing was performed on a plurality of objects to be polished under the same polishing conditions, a polishing object having a relatively different initial shape before polishing, such as a glass substrate, is used. In some cases, the desired polishing accuracy cannot be obtained.

本発明は、このような問題に鑑みてなされたものであり、複数の研磨対象物に対して精度の高い研磨を同時に行うことができる研磨装置を提供することを目的とする。   This invention is made | formed in view of such a problem, and it aims at providing the grinding | polishing apparatus which can perform highly accurate grinding | polishing simultaneously with respect to a several grinding | polishing target object.

このような目的達成のため、本発明に係る研磨装置は、研磨対象物を研磨可能な研磨面を有する研磨パッドと、前記研磨面が上側を向くように前記研磨パッドを保持して回転可能な研磨定盤と、前記研磨定盤の上方に配設されて前記研磨対象物の被研磨面が下側を向くように前記研磨対象物を保持する複数のヘッド部とを備え、前記ヘッド部に保持された前記研磨対象物の被研磨面を前記研磨定盤に保持された前記研磨パッドの研磨面に当接させながら相対移動させて前記研磨対象物を研磨するように構成された研磨装置において、前記研磨パッドは、前記研磨パッドの研磨面が前記研磨対象物の被研磨面よりも大きくて、前記複数のヘッド部にそれぞれ保持された複数の前記研磨対象物を同時に研磨可能に構成されており、前記複数のヘッド部をそれぞれ前記研磨パッドの研磨面と略平行な2次元の方向に移動させるヘッド駆動機構が設けられている。   In order to achieve such an object, a polishing apparatus according to the present invention is capable of rotating with a polishing pad having a polishing surface capable of polishing an object to be polished, and holding the polishing pad so that the polishing surface faces upward. A polishing surface plate, and a plurality of head portions that are disposed above the polishing surface plate and hold the polishing object such that a surface to be polished of the polishing object faces downward; In a polishing apparatus configured to polish the object to be polished by relatively moving the surface to be polished of the object to be held held in contact with the polishing surface of the polishing pad held by the polishing surface plate. The polishing pad is configured such that a polishing surface of the polishing pad is larger than a surface to be polished of the polishing object, and the plurality of polishing objects respectively held by the plurality of head portions can be simultaneously polished. And the plurality of heads Head driving mechanism is provided for moving parts of the two-dimensional direction approximately parallel to the polished surface of each of said polishing pad.

本発明によれば、複数の研磨対象物に対して精度の高い研磨を同時に行うことができる。   According to the present invention, high-precision polishing can be simultaneously performed on a plurality of objects to be polished.

研磨装置の平面図である。It is a top view of a polish device. 研磨装置の一部を示す側面図である。It is a side view which shows a part of polishing apparatus. ヘッド部の側断面図である。It is a sectional side view of a head part. ヘッド部とノズルとの位置関係を示す図である。It is a figure which shows the positional relationship of a head part and a nozzle.

以下、図面を参照して本発明の好ましい実施形態について説明する。本実施形態に係る研磨装置1の概略構成を図1に示す。研磨装置1は、研摩パッド11が装着された研磨定盤12を回転させるパッド回転機構10と、ガラス基板5やサンプルウェハ6等の研磨対象物を保持する第1〜第3ヘッド部20a〜20cと、第1〜第3ヘッド部20a〜20cをそれぞれ駆動する第1〜第3ヘッド駆動機構30a〜30cと、研摩パッド11に対してドレッシングを行う第1〜第3ドレッシング機構80a〜80cと、パッド回転機構10、第1〜第3ヘッド駆動機構30a〜30c、および第1〜第3ドレッシング機構80a〜80c等の作動を制御する制御部85(図2を参照)とを主体に構成される。   Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. A schematic configuration of a polishing apparatus 1 according to the present embodiment is shown in FIG. The polishing apparatus 1 includes a pad rotating mechanism 10 that rotates a polishing surface plate 12 on which a polishing pad 11 is mounted, and first to third head portions 20a to 20c that hold an object to be polished such as a glass substrate 5 and a sample wafer 6. And first to third head drive mechanisms 30a to 30c for driving the first to third head portions 20a to 20c, respectively, and first to third dressing mechanisms 80a to 80c for dressing the polishing pad 11. The pad rotation mechanism 10, the first to third head drive mechanisms 30 a to 30 c, and the control unit 85 (see FIG. 2) that controls the operation of the first to third dressing mechanisms 80 a to 80 c are mainly configured. .

パッド回転機構10は、図2に示すように、ガラス基板5やサンプルウェハ6等の研磨対象物を研磨可能な研磨面を有する研摩パッド11と、研磨パッド11を保持して回転可能な研磨定盤12とを有して構成される。研摩パッド11は、ガラス基板5やサンプルウェハ6よりも径が大きい円盤状に形成されており、例えば、独立発泡構造を有する硬質ポリウレタンのシートを用いて構成され、研磨定盤12の上面に貼り付けられて研磨面が上向きの水平姿勢で保持される。研磨パッド11の研磨面は、ガラス基板5やサンプルウェハ6等の研磨対象物の被研磨面よりも複数倍大きくて、当該研磨対象物を複数同時に研磨できるようになっている。研磨定盤12は、ステンレス等の高剛性材料を用いて平面度の高い円盤状に形成され、研磨定盤12の上面に、研磨面が上側を向くように研磨パッド11が貼り付けられる。研磨定盤12の下側には、鉛直方向に延びる回転軸13が連結されており、この回転軸13により研磨定盤12が水平姿勢で回転可能に支持される。   As shown in FIG. 2, the pad rotating mechanism 10 includes a polishing pad 11 having a polishing surface capable of polishing an object to be polished such as a glass substrate 5 and a sample wafer 6, and a polishing constant capable of rotating while holding the polishing pad 11. And a board 12. The polishing pad 11 is formed in a disk shape having a diameter larger than that of the glass substrate 5 or the sample wafer 6. For example, the polishing pad 11 is formed using a hard polyurethane sheet having an independent foam structure and is attached to the upper surface of the polishing surface plate 12. It is attached and the polishing surface is held in an upward horizontal posture. The polishing surface of the polishing pad 11 is several times larger than the surface to be polished of the object to be polished such as the glass substrate 5 or the sample wafer 6 so that a plurality of objects to be polished can be polished simultaneously. The polishing surface plate 12 is formed in a disk shape with high flatness using a highly rigid material such as stainless steel, and the polishing pad 11 is affixed to the upper surface of the polishing surface plate 12 so that the polishing surface faces upward. A rotating shaft 13 extending in the vertical direction is connected to the lower side of the polishing surface plate 12, and the polishing surface plate 12 is rotatably supported by the rotating shaft 13 in a horizontal posture.

図1に示すように、第1ヘッド部20a、第2ヘッド部20b、および第3ヘッド部20cはそれぞれ、研磨パッド11および研磨定盤12の上方に配設されて被研磨面が下側を向くようにガラス基板5やサンプルウェハ6等の研磨対象物を保持する。また、第1〜第3ヘッド部20a〜20cの構成は互いに同様の構成であり、図3に示すように、各ヘッド部20a〜20cは、各ヘッド駆動機構30a〜30cのスピンドル61と連結されるヘッド本体21と、ヘッド本体21の下面に装着されたメンブレンシート23と、ヘッド本体21の下側周部に取り付けられたリテーナリング24とを有して構成される。   As shown in FIG. 1, the first head portion 20a, the second head portion 20b, and the third head portion 20c are disposed above the polishing pad 11 and the polishing surface plate 12, respectively, and the surface to be polished is on the lower side. A polishing object such as the glass substrate 5 and the sample wafer 6 is held so as to face. The first to third head portions 20a to 20c have the same configuration, and as shown in FIG. 3, each head portion 20a to 20c is connected to the spindle 61 of each head drive mechanism 30a to 30c. A head body 21, a membrane sheet 23 attached to the lower surface of the head body 21, and a retainer ring 24 attached to the lower peripheral portion of the head body 21.

ヘッド本体21は、研磨定盤12と同様の高剛性材料を用いて平面度の高い円盤状に形成され、スピンドル61により水平姿勢で回転可能に保持される。ヘッド本体21の内部には、ガラス基板5やサンプルウェハ6等の研磨対象物を真空吸着するためのエア通路22が形成されている。メンブレンシート23は、ガラス基板5やサンプルウェハ6と同等の径を有する円盤状に形成されており、ヘッド本体21の下面に貼り付けられる。メンブレンシート23には、ヘッド本体21のエア通路22と繋がるように貫通した複数の小孔が形成されており、エア通路22内を負圧にすることでガラス基板5やサンプルウェハ6を真空吸着可能に構成される。これにより、メンブレンシート23に吸着保持された研磨対象物の研磨対象面(すなわち被研磨面)が下向きの水平姿勢で保持される。リテーナリング24は、ガラス基板5やサンプルウェハ6よりも一回り径が大きいリング状に形成され、ヘッド本体21の下側周部に取り付けられてメンブレンシート23に吸着保持された研磨対象物が側方に飛び出すのを防止している(また、研磨対象物の縁ダレを抑制している)。   The head main body 21 is formed in a disk shape with high flatness using a high rigidity material similar to that of the polishing surface plate 12, and is held rotatably by the spindle 61 in a horizontal posture. An air passage 22 is formed in the head main body 21 for vacuum-sucking an object to be polished such as the glass substrate 5 or the sample wafer 6. The membrane sheet 23 is formed in a disk shape having the same diameter as the glass substrate 5 and the sample wafer 6, and is attached to the lower surface of the head body 21. A plurality of small holes are formed in the membrane sheet 23 so as to be connected to the air passage 22 of the head main body 21, and the glass substrate 5 and the sample wafer 6 are vacuum-sucked by making the inside of the air passage 22 negative pressure. Configured to be possible. Thereby, the surface to be polished (that is, the surface to be polished) of the object to be polished that is adsorbed and held on the membrane sheet 23 is held in a downward horizontal posture. The retainer ring 24 is formed in a ring shape having a diameter larger than that of the glass substrate 5 or the sample wafer 6, and is attached to the lower peripheral portion of the head main body 21, and the polishing object adsorbed and held on the membrane sheet 23 is on the side. This prevents it from popping out (in addition, it suppresses edge sag of the object to be polished).

図1に示すように、第1ヘッド駆動機構30a、第2ヘッド駆動機構30b、および第3ヘッド駆動機構30cはそれぞれ、研磨パッド11および研磨定盤12の上方に等間隔(研磨定盤12の中心軸を回転基準とした120度間隔)で配設され、第1ヘッド部20a、第2ヘッド部20b、および第3ヘッド部20cをそれぞれ、パッド回転機構10に対して、回転、昇降、および研磨パッド11の研磨面と略平行な水平方向(2次元方向)に移動可能に保持する。また、第1〜第3ヘッド駆動機構30a〜30cの構成は互いに同様の構成であり、図2に示すように、各ヘッド駆動機構30a〜30cは、筐体部31と、第1水平移動機構35と、第2水平移動機構45と、昇降機構50と、回転機構60とを主体に構成される。筐体部31は、研磨パッド11および研磨定盤12の径方向に沿って水平方向に延びる下側が開放された長い箱形に形成される。   As shown in FIG. 1, the first head driving mechanism 30a, the second head driving mechanism 30b, and the third head driving mechanism 30c are respectively equidistant above the polishing pad 11 and the polishing surface plate 12 (on the polishing surface plate 12). The first head portion 20a, the second head portion 20b, and the third head portion 20c are rotated, lifted, and lowered with respect to the pad rotating mechanism 10, respectively. The polishing pad 11 is held movably in a horizontal direction (two-dimensional direction) substantially parallel to the polishing surface of the polishing pad 11. The first to third head driving mechanisms 30a to 30c are similar in configuration to each other. As shown in FIG. 2, each head driving mechanism 30a to 30c includes a housing portion 31 and a first horizontal movement mechanism. 35, a second horizontal movement mechanism 45, an elevating mechanism 50, and a rotation mechanism 60. The casing 31 is formed in a long box shape with the lower side opened horizontally extending along the radial direction of the polishing pad 11 and the polishing surface plate 12.

第1水平移動機構35は、筐体部31の内部に配設された第1の走行軸36と、第1の走行軸36と螺合された第1の走行体38と、第1の走行軸36を回転駆動する第1の走行軸用モータ39とを主体に構成され、第1の走行体38と繋がる各ヘッド部20a〜20cを第1の走行軸36に沿って水平移動させるようになっている。これにより、各ヘッド部20a〜20cを研磨パッド11および研磨定盤12の径方向に沿った水平方向に移動させることができる。第1の走行軸36は、いわゆるボールネジであり、筐体部31の先端部近傍から基端部まで跨って、第1の走行軸36の中心軸を中心に回転自在に取り付けられる。なお、第1の走行軸36は筐体部31と略平行に延びることになる。第1の走行軸36の先端部には、走行軸用従動プーリ37が取り付けられている。   The first horizontal movement mechanism 35 includes a first traveling shaft 36 disposed inside the housing portion 31, a first traveling body 38 screwed with the first traveling shaft 36, and a first traveling. The first traveling shaft motor 39 that rotationally drives the shaft 36 is mainly configured so that the head portions 20a to 20c connected to the first traveling body 38 are horizontally moved along the first traveling shaft 36. It has become. Thereby, each head part 20a-20c can be moved to the horizontal direction along the radial direction of the polishing pad 11 and the polishing surface plate 12. FIG. The first travel shaft 36 is a so-called ball screw, and is attached so as to be rotatable around the central axis of the first travel shaft 36 across the vicinity of the distal end portion of the housing portion 31 to the base end portion. Note that the first traveling shaft 36 extends substantially parallel to the housing portion 31. A travel shaft driven pulley 37 is attached to the tip of the first travel shaft 36.

第1の走行体38は、第1の走行軸36と螺合されており、第1の走行軸36の回転に応じて水平(往復)移動するようになっている。この第1の走行体38には、第2水平移動機構45を介して昇降機構50の昇降ベース部材51が連結され、これにより、第2水平移動機構45、昇降機構50、および回転機構60を介して繋がる各ヘッド部20a〜20cを第1の走行軸36に沿って水平移動させることが可能になる。   The first traveling body 38 is screwed with the first traveling shaft 36, and moves horizontally (reciprocating) according to the rotation of the first traveling shaft 36. The first traveling body 38 is connected to the elevating base member 51 of the elevating mechanism 50 via the second horizontal moving mechanism 45, whereby the second horizontal moving mechanism 45, the elevating mechanism 50, and the rotating mechanism 60 are connected to each other. It is possible to horizontally move the head portions 20 a to 20 c connected via the first traveling shaft 36.

第1の走行軸用モータ39は、筐体部31の内側に取り付けられており、第1の走行軸用モータ39の回転軸に走行軸用駆動プーリ40が連結される。走行軸用駆動プーリ40と走行軸用従動プーリ37との間にベルトが巻き掛けられ、第1の走行軸用モータ39の回転駆動力が走行軸用駆動プーリ40および走行軸用従動プーリ37を介して第1の走行軸36に伝達され、第1の走行軸用モータ39により第1の走行軸36が回転駆動される。   The first travel shaft motor 39 is attached to the inside of the casing 31, and the travel shaft drive pulley 40 is connected to the rotation shaft of the first travel shaft motor 39. A belt is wound between the travel shaft drive pulley 40 and the travel shaft driven pulley 37, and the rotational driving force of the first travel shaft motor 39 causes the travel shaft drive pulley 40 and the travel shaft driven pulley 37 to move. To the first travel shaft 36, and the first travel shaft 36 is rotationally driven by the first travel shaft motor 39.

第2水平移動機構45は、第1の走行体38に配設された第2の走行軸46と、第2の走行軸46と螺合された第2の走行体47と、第2の走行軸46を回転駆動する第2の走行軸用モータ(図示せず)とを主体に構成され、第2の走行体47と繋がる各ヘッド部20a〜20cを第2の走行軸46に沿って水平移動させるようになっている。これにより、各ヘッド部20a〜20cを研磨パッド11および研磨定盤12の接線方向に沿った水平方向に移動させることができる。そのため、第1水平移動機構35と第2水平移動機構45を組み合わせて作動させることにより、図1の二点鎖線で示すように、各ヘッド部20a〜20cを研磨パッド11の研磨面と略平行な任意の水平方向(2次元の方向)に(例えば、8の字の軌跡を描くように)移動させることが可能になる。   The second horizontal movement mechanism 45 includes a second traveling shaft 46 disposed on the first traveling body 38, a second traveling body 47 screwed with the second traveling shaft 46, and a second traveling. The head portion 20 a to 20 c connected to the second traveling body 47 is horizontally arranged along the second traveling shaft 46, mainly composed of a second traveling shaft motor (not shown) that rotationally drives the shaft 46. It is designed to move. Thereby, each head part 20a-20c can be moved to the horizontal direction along the tangent direction of the polishing pad 11 and the polishing surface plate 12. As shown in FIG. Therefore, by operating the first horizontal movement mechanism 35 and the second horizontal movement mechanism 45 in combination, the head portions 20a to 20c are substantially parallel to the polishing surface of the polishing pad 11, as indicated by a two-dot chain line in FIG. It is possible to move in an arbitrary horizontal direction (two-dimensional direction) (for example, so as to draw an 8-shaped trajectory).

なお、第2水平移動機構45は、第1水平移動機構35と同様の構成であり、詳細な説明を省略する、ただし、第2の走行軸46は、第1の走行軸36が延びる方向と垂直な方向(すなわち、研磨パッド11および研磨定盤12の接線方向)に、第1の走行体38に回転自在に取り付けられる。また、第2の走行体47には、昇降機構50の昇降ベース部材51が連結され、これにより、昇降機構50および回転機構60を介して繋がる各ヘッド部20a〜20cを第2の走行軸46に沿って水平移動させることが可能になる。また、第2の走行軸用モータ(図示せず)は、第1の走行体38に取り付けられる。   The second horizontal movement mechanism 45 has the same configuration as that of the first horizontal movement mechanism 35 and will not be described in detail. However, the second traveling shaft 46 has a direction in which the first traveling shaft 36 extends. The first traveling body 38 is rotatably attached in a vertical direction (that is, a tangential direction of the polishing pad 11 and the polishing surface plate 12). Also, the second traveling body 47 is connected to the elevating base member 51 of the elevating mechanism 50, whereby the head portions 20 a to 20 c connected via the elevating mechanism 50 and the rotating mechanism 60 are connected to the second traveling shaft 46. It is possible to move horizontally along. A second traveling shaft motor (not shown) is attached to the first traveling body 38.

昇降機構50は、図2に示すように、第2水平移動機構45における第2の走行体47と連結された昇降ベース部材51と、昇降ベース部材51に取り付けられた2つの昇降用ボールネジ52,55と、昇降用ボールネジ52,55と螺合された昇降部材57と、昇降用ボールネジ52,55を回転駆動する昇降用モータ58とを主体に構成され、昇降部材57と繋がる各ヘッド部20a〜20cを昇降用ボールネジ52,55に沿って昇降させるようになっている。昇降ベース部材51は、箱形に形成されており、第2水平移動機構45における第2の走行体47と連結されて水平移動可能に構成される。   As shown in FIG. 2, the elevating mechanism 50 includes an elevating base member 51 connected to the second traveling body 47 in the second horizontal movement mechanism 45, and two elevating ball screws 52 attached to the elevating base member 51, 55, each of the head portions 20 a to 20 a connected to the elevating member 57 is mainly composed of an elevating member 57 screwed to the elevating ball screws 52, 55 and an elevating motor 58 that rotationally drives the elevating ball screws 52, 55. 20c is moved up and down along the ball screws 52 and 55 for raising / lowering. The elevating base member 51 is formed in a box shape and is configured to be horizontally movable by being connected to the second traveling body 47 in the second horizontal movement mechanism 45.

2つの昇降用ボールネジ52,55はそれぞれ、昇降ベース部材51の内部に回転自在に取り付けられる。このとき、各昇降用ボールネジ52,55はそれぞれ、互いに平行となるように上下方向を向いている。第1の昇降用ボールネジ52の下端部には、第1の昇降用従動プーリ53が取り付けられ、第1の昇降用ボールネジ52の上端部には、駆動伝達プーリ54が取り付けられている。また、第2の昇降用ボールネジ55の上端部には、第2の昇降用従動プーリ56が取り付けられ、第2の昇降用従動プーリ56と駆動伝達プーリ54との間にベルトが巻き掛けられる。   The two lifting ball screws 52 and 55 are rotatably mounted inside the lifting base member 51, respectively. At this time, the elevating ball screws 52 and 55 are directed in the vertical direction so as to be parallel to each other. A first elevating driven pulley 53 is attached to the lower end of the first elevating ball screw 52, and a drive transmission pulley 54 is attached to the upper end of the first elevating ball screw 52. A second elevating driven pulley 56 is attached to the upper end portion of the second elevating ball screw 55, and a belt is wound between the second elevating driven pulley 56 and the drive transmission pulley 54.

昇降用モータ58は、昇降ベース部材51に取り付けられており、昇降用モータ58の回転軸に昇降用駆動プーリ59が連結される。昇降用駆動プーリ59と第1の昇降用従動プーリ53との間にベルトが巻き掛けられ、昇降用モータ58の回転駆動力が昇降用駆動プーリ59および第1の昇降用従動プーリ53を介して第1の昇降用ボールネジ52に伝達されるとともに、駆動伝達プーリ54および第2の昇降用従動プーリ56を介して第2の昇降用ボールネジ55に伝達され、昇降用モータ58により第1および第2の昇降用ボールネジ52,55がそれぞれ回転駆動される。   The elevating motor 58 is attached to the elevating base member 51, and an elevating drive pulley 59 is connected to the rotation shaft of the elevating motor 58. A belt is wound between the elevating drive pulley 59 and the first elevating driven pulley 53, and the rotational driving force of the elevating motor 58 is passed through the elevating drive pulley 59 and the first elevating driven pulley 53. The first elevating ball screw 52 is transmitted to the second elevating ball screw 55 via the drive transmission pulley 54 and the second elevating driven pulley 56, and the first and second elevating motors 58 transmit the first and second elevating ball screws 52. The lifting ball screws 52 and 55 are driven to rotate.

回転機構60は、昇降機構50の昇降部材57に回転可能に取り付けられたスピンドル61と、スピンドル61を回転駆動する回転用モータ64とを主体に構成され、スピンドル61の下端部に連結された各ヘッド部20a〜20cを回転させるようになっている。スピンドル61は、中空円筒状に形成されており、昇降機構50の昇降部材57に回転可能に取り付けられるとともに、当該昇降部材57とともに昇降可能に構成される。   The rotation mechanism 60 is mainly composed of a spindle 61 rotatably attached to the elevating member 57 of the elevating mechanism 50 and a rotation motor 64 that rotationally drives the spindle 61, and is connected to the lower end portion of the spindle 61. The head portions 20a to 20c are rotated. The spindle 61 is formed in a hollow cylindrical shape, is rotatably attached to the lifting member 57 of the lifting mechanism 50, and is configured to be lifted and lowered together with the lifting member 57.

スピンドル61の下端部には各ヘッド部20a〜20cが連結されており、各ヘッド部20a〜20cの内部(エア通路22)へ空気を給排するためのエア通路がスピンドル61の内部に形成される。一方、スピンドル61の上端部にはロータリージョイント63が取り付けられており、図示しない空気圧供給源および真空源と接続される。また、スピンドル61の中央部近傍には、回転用従動プーリ62が取り付けられる。   The head portions 20a to 20c are connected to the lower end portion of the spindle 61, and an air passage for supplying and discharging air to and from the head portions 20a to 20c (air passage 22) is formed inside the spindle 61. The On the other hand, a rotary joint 63 is attached to the upper end portion of the spindle 61 and is connected to an air pressure supply source and a vacuum source (not shown). A driven pulley 62 for rotation is attached near the center of the spindle 61.

回転用モータ64は、昇降機構50の昇降部材57に取り付けられており、回転用モータ64の回転軸に回転用駆動プーリ65が連結される。回転用駆動プーリ65と回転用従動プーリ62との間にベルトが巻き掛けられ、回転用モータ64の回転駆動力が回転用駆動プーリ65および回転用従動プーリ62を介してスピンドル61に伝達され、回転用モータ64によりスピンドル61が回転駆動される。このように、各ヘッド駆動機構30a〜30cは、各ヘッド部20a〜20cをそれぞれ、回転、昇降、および水平移動させることができる。   The rotation motor 64 is attached to the elevating member 57 of the elevating mechanism 50, and the rotation drive pulley 65 is connected to the rotation shaft of the rotation motor 64. A belt is wound between the rotation driving pulley 65 and the rotation driven pulley 62, and the rotation driving force of the rotation motor 64 is transmitted to the spindle 61 via the rotation driving pulley 65 and the rotation driven pulley 62. The spindle 61 is rotationally driven by the rotation motor 64. Thus, each head drive mechanism 30a-30c can rotate, raise / lower, and horizontally move each head part 20a-20c, respectively.

なお、昇降機構50の昇降部材57には、スラリー供給機構70の第1ノズル71および第2ノズル72が取り付けられている。スラリー供給機構70は、図4に示すように、先端に設けられた第1ノズル71もしくは第2ノズル72から研磨パッド11の研磨面上にスラリー(研磨液)を流下させて供給する。第1ノズル71および第2ノズル72は、各ヘッド部20a〜20cの側方に位置するように昇降部材57に取り付けられ、第1ノズル71および第2ノズル72によるスラリーの供給位置は、研磨パッド11の研磨面上に流下したスラリーが研磨パッド11の回転により研磨時に各ヘッド部20a〜20cに保持された研磨対象物の被研磨面に達する位置に設定される。これにより、研磨パッド11の研磨面と研磨対象物の被研磨面との間にスラリーを効率よく供給することができる。なお、図4の場合、研磨パッド11が第1ノズル71から第2ノズル72へ通過するように回転するときには第1ノズル71からスラリーが流下し、研磨パッド11が第2ノズル72から第1ノズル71へ通過するように回転するときには第2ノズル72からスラリーが流下するようになっている。   The first nozzle 71 and the second nozzle 72 of the slurry supply mechanism 70 are attached to the lifting member 57 of the lifting mechanism 50. As shown in FIG. 4, the slurry supply mechanism 70 supplies the slurry (polishing liquid) by flowing down from the first nozzle 71 or the second nozzle 72 provided at the tip onto the polishing surface of the polishing pad 11. The 1st nozzle 71 and the 2nd nozzle 72 are attached to the raising / lowering member 57 so that it may be located in the side of each head part 20a-20c, and the supply position of the slurry by the 1st nozzle 71 and the 2nd nozzle 72 is a polishing pad. 11 is set at a position where the slurry flowing down on the polishing surface 11 reaches the surface to be polished of the object to be polished held by the head portions 20a to 20c during polishing by the rotation of the polishing pad 11. As a result, the slurry can be efficiently supplied between the polishing surface of the polishing pad 11 and the surface to be polished of the object to be polished. In the case of FIG. 4, when the polishing pad 11 rotates so as to pass from the first nozzle 71 to the second nozzle 72, the slurry flows down from the first nozzle 71, and the polishing pad 11 moves from the second nozzle 72 to the first nozzle. When rotating so as to pass to 71, the slurry flows down from the second nozzle 72.

図1に示すように、第1ドレッシング機構80a、第2ドレッシング機構80b、および第3ドレッシング機構80cはそれぞれ、研磨パッド11および研磨定盤12の上方における第1〜第3ヘッド駆動機構30a〜30cの間隙部に、等間隔(研磨定盤12の中心軸を回転基準とした120度間隔)で配設される。第1〜第3ドレッシング機構80a〜80cの構成は互いに同様の構成であり、円盤状に形成された第1〜第3ドレッシング工具81a〜81cを主体に構成される。   As shown in FIG. 1, the first dressing mechanism 80a, the second dressing mechanism 80b, and the third dressing mechanism 80c are the first to third head driving mechanisms 30a to 30c above the polishing pad 11 and the polishing surface plate 12, respectively. Are arranged at equal intervals (120 degree intervals with the central axis of the polishing surface plate 12 as a rotation reference). The configurations of the first to third dressing mechanisms 80a to 80c are the same as each other, and are mainly configured of the first to third dressing tools 81a to 81c formed in a disk shape.

第1ドレッシング工具81aは、各ヘッド駆動機構30a〜30cと同様の駆動機構(図示せず)により、回転、昇降、および研磨パッド11の径方向へ水平移動可能に構成されており、第1ヘッド駆動機構30aと第2ヘッド駆動機構30bとの間に位置する研磨パッド11に対してドレッシングを行うようになっている。第2ドレッシング工具81bは、第1ドレッシング工具81aと同様の構成であり、第2ヘッド駆動機構30bと第3ヘッド駆動機構30cとの間に位置する研磨パッド11に対してドレッシングを行うようになっている。第3ドレッシング工具81cも、第1ドレッシング工具81aと同様の構成であり、第1ヘッド駆動機構30aと第3ヘッド駆動機構30cとの間に位置する研磨パッド11に対してドレッシングを行うようになっている。   The first dressing tool 81a is configured to be rotatable, lifted and moved horizontally in the radial direction of the polishing pad 11 by a drive mechanism (not shown) similar to the head drive mechanisms 30a to 30c. The polishing pad 11 positioned between the drive mechanism 30a and the second head drive mechanism 30b is dressed. The second dressing tool 81b has the same configuration as the first dressing tool 81a, and performs dressing on the polishing pad 11 located between the second head driving mechanism 30b and the third head driving mechanism 30c. ing. The third dressing tool 81c has the same configuration as the first dressing tool 81a, and performs dressing on the polishing pad 11 positioned between the first head driving mechanism 30a and the third head driving mechanism 30c. ing.

このように、複数のドレッシング工具81a〜81cを用いて、研磨パッド11を回転させながらドレッシングを行うことにより、効率よくドレッシングを行うことができる。また、第1〜第3ドレッシング機構80a〜80cがそれぞれ第1〜第3ヘッド駆動機構30a〜30cの間隙部に配設されているため、研磨加工と同時にドレッシングを行うようにすれば、複数の研磨対象物を同時に研磨する際に、一つの研磨の結果が残りの研磨の結果に影響を及ぼしてしまうことを防止することができる。   Thus, dressing can be performed efficiently by performing dressing using the plurality of dressing tools 81 a to 81 c while rotating the polishing pad 11. In addition, since the first to third dressing mechanisms 80a to 80c are disposed in the gaps of the first to third head driving mechanisms 30a to 30c, respectively, if dressing is performed simultaneously with the polishing process, a plurality of dressings are provided. When simultaneously polishing the objects to be polished, it is possible to prevent the result of one polishing from affecting the results of the remaining polishing.

制御部85は、図2に示すように、各ヘッド駆動機構30a〜30cの第1の走行軸用モータ39、第2の走行軸用モータ(図示せず)、昇降用モータ58、および回転用モータ64と電気的に接続されており、これらに駆動信号を出力して、各ヘッド駆動機構30a〜30cによる各ヘッド部20a〜20cの回転、昇降、および水平移動を制御する。なお、第1〜第3ヘッド駆動機構30a〜30cの作動はそれぞれ独立して制御されるようになっている。また、制御部85は、パッド回転機構10による研磨パッド11の回転作動や、第1〜第3ドレッシング機構80a〜80cによるドレッシング作動、スラリー供給機構70によるスラリー供給作動等を制御し、いわゆる研磨レシピに応じた研磨加工を統括的に制御するようになっている。   As shown in FIG. 2, the control unit 85 includes a first traveling shaft motor 39, a second traveling shaft motor (not shown), a lifting motor 58, and a rotation motor for each of the head driving mechanisms 30 a to 30 c. It is electrically connected to the motor 64 and outputs a drive signal to these to control the rotation, elevation and horizontal movement of the head units 20a to 20c by the head drive mechanisms 30a to 30c. The operations of the first to third head driving mechanisms 30a to 30c are controlled independently of each other. The control unit 85 controls the rotation operation of the polishing pad 11 by the pad rotation mechanism 10, the dressing operation by the first to third dressing mechanisms 80 a to 80 c, the slurry supply operation by the slurry supply mechanism 70, etc. It is designed to control the polishing process according to the situation.

以上のように構成される研磨装置において、ガラス基板5の研磨加工を行うには、まず、制御部85の制御によって、第1ヘッド駆動機構30aにより第1ヘッド部20aを研摩パッド11の外側に位置する待避位置に移動させ、この待避位置においてサンプルウェハ6の裏面を第1ヘッド部20aのメンブレンシート23に真空吸着させる。これにより、第1ヘッド部20aがサンプルウェハ6を吸着保持する。なお、サンプルウェハ6は、ガラス基板5と同様の形状(円盤状)に形成される。同様に、第2および第3ヘッド駆動機構30b,30cにより第2および第3ヘッド部20b,20cをそれぞれ待避位置に移動させ、各待避位置においてそれぞれガラス基板5の裏面を第2および第3ヘッド部20b,20cのメンブレンシート23に真空吸着させる。これにより、第2および第3ヘッド部20b,20cがそれぞれガラス基板5を吸着保持する。   In the polishing apparatus configured as described above, in order to polish the glass substrate 5, first, the first head driving mechanism 30 a moves the first head portion 20 a to the outside of the polishing pad 11 under the control of the control portion 85. The back surface of the sample wafer 6 is vacuum-sucked to the membrane sheet 23 of the first head portion 20a at the retracted position. As a result, the first head portion 20a holds the sample wafer 6 by suction. The sample wafer 6 is formed in the same shape (disk shape) as the glass substrate 5. Similarly, the second and third head driving mechanisms 30b and 30c move the second and third head portions 20b and 20c to the retracted positions, respectively, and the back surfaces of the glass substrate 5 are respectively moved to the retracted positions at the retracted positions. Vacuum adsorption is performed on the membrane sheet 23 of the portions 20b and 20c. Thereby, the 2nd and 3rd head parts 20b and 20c adsorb and hold glass substrate 5, respectively.

次に、第1〜第3ヘッド駆動機構30a〜30cにより第1〜第3ヘッド部20a〜20cをそれぞれ研摩パッド11の上方に対向して位置させ、各ヘッド部20a〜20cおよび研摩パッド11をともに回転させながら第1〜第3ヘッド部20a〜20cをそれぞれ研磨位置に下降させてサンプルウェハ6および2枚のガラス基板5を研摩パッド11に当接させる。このとき、負圧状態であった各ヘッド部20a〜20cのエア通路22に空気圧を供給し、サンプルウェハ6および2枚のガラス基板5を所定の研磨圧力で研摩パッド11に押圧させる。またこのとき、スラリー供給機構70を用いて、第1ノズル71もしくは第2ノズル72から研磨パッド11の研磨面上にスラリーを流下させて供給する。   Next, the first to third head driving mechanisms 30a to 30c respectively position the first to third head portions 20a to 20c so as to face each other above the polishing pad 11, and the head portions 20a to 20c and the polishing pad 11 are moved to the upper side. While rotating together, the first to third head portions 20 a to 20 c are respectively lowered to the polishing position to bring the sample wafer 6 and the two glass substrates 5 into contact with the polishing pad 11. At this time, air pressure is supplied to the air passage 22 of each of the head portions 20a to 20c in the negative pressure state, and the sample wafer 6 and the two glass substrates 5 are pressed against the polishing pad 11 with a predetermined polishing pressure. At this time, the slurry is supplied from the first nozzle 71 or the second nozzle 72 to the polishing surface of the polishing pad 11 using the slurry supply mechanism 70.

このような状態で、第1〜第3ヘッド駆動機構30a〜30cにより第1〜第3ヘッド部20a〜20cをそれぞれ研摩パッド11に対して2次元の方向に(例えば、8の字の軌跡を描くように)水平移動させながら、サンプルウェハ6および2枚のガラス基板5に対する研磨加工を同時に行う。このとき、第1〜第3ヘッド駆動機構30a〜30cの作動はそれぞれ独立して制御されるようになっている。そのため、研磨加工を行う前のガラス基板5(およびサンプルウェハ6)の初期形状に応じて、各ヘッド部20a〜20cの移動パターンを個別に変えることができ、ガラス基板5(およびサンプルウェハ6)の被研磨面に対する形状補正(平坦化)を個別に行うことが可能であることから、複数の研磨対象物に対して精度の高い研磨を同時に行うことができる。   In such a state, the first to third head drive mechanisms 30a to 30c move the first to third head portions 20a to 20c in a two-dimensional direction with respect to the polishing pad 11, respectively (for example, an 8-shaped locus). While moving horizontally (as shown), the sample wafer 6 and the two glass substrates 5 are simultaneously polished. At this time, the operations of the first to third head driving mechanisms 30a to 30c are controlled independently of each other. Therefore, the movement pattern of each head part 20a-20c can be changed individually according to the initial shape of the glass substrate 5 (and the sample wafer 6) before polishing, and the glass substrate 5 (and the sample wafer 6). Since it is possible to individually perform shape correction (flattening) on the surface to be polished, highly accurate polishing can be simultaneously performed on a plurality of objects to be polished.

なお、このような研磨加工は、図示しないレーザー干渉計等により研磨対象物の被研磨面の状態(すなわち、被研磨面の表面粗さや研磨量等の研磨状態)を計測しながら繰り返し行われる。ところが、ガラス基板5を研磨する場合、ガラス基板5は透明もしくは半透明であるため、レーザー干渉計を使用することができない。そこで、本実施形態においては、2枚のガラス基板5と同時にサンプルウェハ6を研磨し、レーザー干渉計により計測されたサンプルウェハ6の被研磨面の状態(すなわち研磨状態)に応じて、制御部85が各ヘッド駆動機構30a〜30cの作動を制御するようになっている。これにより、透明もしくは半透明なガラス基板5を高精度に研磨することができる。   Such a polishing process is repeatedly performed while measuring the state of the surface to be polished of the object to be polished (that is, the surface roughness of the surface to be polished, the polishing state such as the polishing amount) with a laser interferometer or the like (not shown). However, when the glass substrate 5 is polished, since the glass substrate 5 is transparent or translucent, a laser interferometer cannot be used. Therefore, in the present embodiment, the sample wafer 6 is polished simultaneously with the two glass substrates 5, and the control unit is controlled according to the state of the polished surface of the sample wafer 6 (that is, the polishing state) measured by the laser interferometer. 85 controls the operation of the head drive mechanisms 30a to 30c. Thereby, the transparent or translucent glass substrate 5 can be polished with high accuracy.

また、このような研磨加工の際、研磨が中止されている間、もしくは研摩中に、第1〜第3ドレッシング機構80a〜80cのドレッシング工具81a〜81cをそれぞれ回転させながら研磨パッド11の研磨面に当接させて、回転する研磨パッド11の径方向に往復移動させることにより、研磨パッド11のドレッシングを行う。なおこのとき、研磨面の平坦性を確認するため、図示しない接触式計測器を用いて研磨面の高さを複数点計測し、研磨面の平面度を求める。   Further, during such polishing process, while polishing is stopped or during polishing, the polishing surface of the polishing pad 11 while rotating the dressing tools 81a to 81c of the first to third dressing mechanisms 80a to 80c, respectively. The dressing of the polishing pad 11 is performed by reciprocating in the radial direction of the rotating polishing pad 11. At this time, in order to confirm the flatness of the polished surface, the contact surface measuring instrument (not shown) is used to measure the height of the polished surface at a plurality of points to determine the flatness of the polished surface.

このように、本実施形態の研磨装置1によれば、第1〜第3ヘッド部20a〜20cをそれぞれ研磨パッド11の研磨面と略平行な2次元の方向に移動させる第1〜第3ヘッド駆動機構30a〜30cが設けられているため、前述したように、複数の研磨対象物に対して精度の高い研磨を同時に行うことができる。なおこのとき、第1〜第3ヘッド部20a〜20cをそれぞれ8の字の軌跡を描くように等速で水平移動させるようにすれば、研磨面の偏摩耗を抑制することができる。   Thus, according to the polishing apparatus 1 of the present embodiment, the first to third heads that move the first to third head portions 20a to 20c in two-dimensional directions substantially parallel to the polishing surface of the polishing pad 11, respectively. Since the drive mechanisms 30a to 30c are provided, high-precision polishing can be simultaneously performed on a plurality of objects to be polished as described above. At this time, if the first to third head portions 20a to 20c are horizontally moved at a constant speed so as to draw an 8-shaped locus, uneven wear of the polished surface can be suppressed.

また、搬送時にガラス基板5およびサンプルウェハ6を各ヘッド部20a〜20cのメンブレンシート23に真空吸着させる一方、研磨時に空気圧を利用してガラス基板5およびサンプルウェハ6を所定の研磨圧力で研摩パッド11に押圧させることで、研磨量に拘わらず研磨パッド11の研磨面を基準として研磨を行うことが可能である。また、第1〜第3ヘッド駆動機構30a〜30cを研磨対象物の種類に応じて交換するようにすれば、異なる形状・大きさを有する研磨対象物に対応可能である。また、研摩パッド11の外周側にガラス基板5およびサンプルウェハ6を当接させるようにすれば、研摩パッド11の速度(線速)が高くなって研磨レートを向上させることができる。   In addition, the glass substrate 5 and the sample wafer 6 are vacuum-sucked to the membrane sheet 23 of each of the head portions 20a to 20c during conveyance, while the polishing substrate is used to polish the glass substrate 5 and the sample wafer 6 with a predetermined polishing pressure using air pressure during polishing. By being pressed by 11, it is possible to perform polishing with reference to the polishing surface of the polishing pad 11 regardless of the polishing amount. Further, if the first to third head driving mechanisms 30a to 30c are replaced according to the type of the polishing object, it is possible to deal with the polishing object having different shapes and sizes. Further, if the glass substrate 5 and the sample wafer 6 are brought into contact with the outer peripheral side of the polishing pad 11, the speed (linear speed) of the polishing pad 11 can be increased and the polishing rate can be improved.

なお、上述の実施形態において、2枚のガラス基板5とサンプルウェハ6を同時に研磨しているが、これに限られるものではなく、ガラス基板5の枚数によっては、1枚のガラス基板5と2枚のサンプルウェハ6を同時に研磨するようにしてもよい。サンプルウェハ6を2枚用いるのは、研摩パッド11および研磨定盤12が偏荷重により傾いてしまうのを防止するためである。また、ガラス基板5に限らず、半導体ウェハを3枚同時に研磨するようにしてもよい。   In the above-described embodiment, the two glass substrates 5 and the sample wafer 6 are polished simultaneously. However, the present invention is not limited to this, and depending on the number of the glass substrates 5, one glass substrate 5 and two glass substrates 5 are polished. The sample wafers 6 may be polished at the same time. The two sample wafers 6 are used in order to prevent the polishing pad 11 and the polishing surface plate 12 from being inclined due to an offset load. Further, not only the glass substrate 5 but also three semiconductor wafers may be polished simultaneously.

また、上述の実施形態において、ヘッド部およびヘッド駆動機構が3つずつ設けられているが、これに限られるものではなく、例えば、(90度間隔で)4つずつ設けるようにしてもよく、複数設けられていればよい。   In the above-described embodiment, three head units and three head drive mechanisms are provided. However, the present invention is not limited to this. For example, four head units and four head drive mechanisms may be provided (at intervals of 90 degrees). It is only necessary to provide a plurality.

1 研磨装置
5 ガラス基板(研磨対象物) 6 サンプルウェハ(研磨対象物)
10 パッド回転機構
11 研摩パッド 12 研磨定盤
20a 第1ヘッド部 20b 第2ヘッド部
20c 第3ヘッド部
30a 第1ヘッド駆動機構 30b 第2ヘッド駆動機構
30c 第3ヘッド駆動機構
70 スラリー供給機構(研磨液供給部)
71 第1ノズル 72 第2ノズル
85 制御部
1 Polishing device 5 Glass substrate (polishing object) 6 Sample wafer (polishing object)
DESCRIPTION OF SYMBOLS 10 Pad rotation mechanism 11 Polishing pad 12 Polishing surface plate 20a 1st head part 20b 2nd head part 20c 3rd head part 30a 1st head drive mechanism 30b 2nd head drive mechanism 30c 3rd head drive mechanism 70 Slurry supply mechanism (polishing) Liquid supply unit)
71 1st nozzle 72 2nd nozzle 85 Control part

Claims (3)

研磨対象物を研磨可能な研磨面を有する研磨パッドと、前記研磨面が上側を向くように前記研磨パッドを保持して回転可能な研磨定盤と、前記研磨定盤の上方に配設されて前記研磨対象物の被研磨面が下側を向くように前記研磨対象物を保持する複数のヘッド部とを備え、前記ヘッド部に保持された前記研磨対象物の被研磨面を前記研磨定盤に保持された前記研磨パッドの研磨面に当接させながら相対移動させて前記研磨対象物を研磨するように構成された研磨装置において、
前記研磨パッドは、前記研磨パッドの研磨面が前記研磨対象物の被研磨面よりも大きくて、前記複数のヘッド部にそれぞれ保持された複数の前記研磨対象物を同時に研磨可能に構成されており、
前記複数のヘッド部をそれぞれ前記研磨パッドの研磨面と略平行な2次元の方向に移動させるヘッド駆動機構が設けられていることを特徴とする研磨装置。
A polishing pad having a polishing surface capable of polishing an object to be polished, a polishing surface plate that is rotatable while holding the polishing pad so that the polishing surface faces upward, and disposed above the polishing surface plate. A plurality of head portions that hold the polishing object such that the surface to be polished of the polishing object faces downward, and the surface of the polishing object that is held by the head portion is the polishing surface plate. In a polishing apparatus configured to polish the object to be polished by moving relative to the polishing surface of the polishing pad held on the polishing pad,
The polishing pad is configured such that a polishing surface of the polishing pad is larger than a surface to be polished of the object to be polished, and the plurality of objects to be polished held by the plurality of head portions can be simultaneously polished. ,
A polishing apparatus, comprising: a head driving mechanism that moves each of the plurality of head portions in a two-dimensional direction substantially parallel to a polishing surface of the polishing pad.
前記研磨定盤に保持された前記研磨パッドに研磨液を流下させて供給する研磨液供給部を備え、
前記研磨液供給部による前記研磨液の供給位置は、前記研磨パッドに流下した研磨液が前記研磨パッドの回転により前記ヘッド部に保持された前記研磨対象物の被研磨面に達する位置に設定されることを特徴とする請求項1に記載の研磨装置。
A polishing liquid supply unit for supplying the polishing liquid to the polishing pad held on the polishing plate by flowing down;
The polishing liquid supply position by the polishing liquid supply section is set to a position where the polishing liquid flowing down to the polishing pad reaches the surface to be polished of the object to be polished held by the head section by the rotation of the polishing pad. The polishing apparatus according to claim 1.
前記ヘッド駆動機構の作動を制御する制御部を備え、
前記研磨対象物がガラス基板とウェハであって、
前記複数のヘッド部のうち少なくとも1つが前記ガラス基板を保持するとともに、前記複数のヘッド部のうち残りが前記ウェハを保持して、前記研磨パッドが前記ガラス基板および前記ウェハを同時に研磨するように構成されており、
前記制御部は、前記ウェハの研磨状態に応じて前記ヘッド駆動機構の作動を制御することを特徴とする請求項1または2に記載の研磨装置。
A control unit for controlling the operation of the head drive mechanism;
The polishing object is a glass substrate and a wafer,
At least one of the plurality of head portions holds the glass substrate, and the other of the plurality of head portions holds the wafer, and the polishing pad polishes the glass substrate and the wafer simultaneously. Configured,
The polishing apparatus according to claim 1, wherein the control unit controls the operation of the head driving mechanism according to a polishing state of the wafer.
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KR101799497B1 (en) * 2016-07-13 2017-11-20 주식회사 케이씨 Chemical mechanical polishing apparatus
JP2018111162A (en) * 2017-01-12 2018-07-19 株式会社応用科学研究所 Polishing device
CN113414680A (en) * 2021-07-12 2021-09-21 金兴利节能科技(广东)有限公司 Gem cover plate processing technology and special grinding machine
CN113414680B (en) * 2021-07-12 2022-08-26 金兴利节能科技(广东)有限公司 Gem cover plate processing technology and special grinding machine

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