JP2006165595A5 - - Google Patents
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- Publication number
- JP2006165595A5 JP2006165595A5 JP2006026640A JP2006026640A JP2006165595A5 JP 2006165595 A5 JP2006165595 A5 JP 2006165595A5 JP 2006026640 A JP2006026640 A JP 2006026640A JP 2006026640 A JP2006026640 A JP 2006026640A JP 2006165595 A5 JP2006165595 A5 JP 2006165595A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- semiconductor device
- hole
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- 230000001681 protective effect Effects 0.000 claims 7
- 239000004642 Polyimide Substances 0.000 claims 4
- 229920001721 polyimide Polymers 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000003353 gold alloy Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006026640A JP2006165595A (ja) | 2006-02-03 | 2006-02-03 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006026640A JP2006165595A (ja) | 2006-02-03 | 2006-02-03 | 半導体装置及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003350953A Division JP3794403B2 (ja) | 2003-10-09 | 2003-10-09 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006165595A JP2006165595A (ja) | 2006-06-22 |
| JP2006165595A5 true JP2006165595A5 (sk) | 2006-11-24 |
Family
ID=36667158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006026640A Withdrawn JP2006165595A (ja) | 2006-02-03 | 2006-02-03 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006165595A (sk) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4888650B2 (ja) * | 2007-01-11 | 2012-02-29 | セイコーエプソン株式会社 | 半導体装置及び電子デバイスの製造方法 |
| JP5060797B2 (ja) * | 2007-02-21 | 2012-10-31 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP5249080B2 (ja) * | 2009-02-19 | 2013-07-31 | セイコーインスツル株式会社 | 半導体装置 |
| JP5432543B2 (ja) * | 2009-02-21 | 2014-03-05 | 新日本無線株式会社 | 半導体装置の製造方法 |
| KR101675322B1 (ko) | 2009-06-23 | 2016-11-14 | 삼성전자주식회사 | 다공성 산화막 속에 형성된 나노와이어 네트워크 단원계 상변화층을 갖는 상변화 메모리 및 형성 방법 |
| US8227926B2 (en) * | 2009-10-23 | 2012-07-24 | Ati Technologies Ulc | Routing layer for mitigating stress in a semiconductor die |
| US8299632B2 (en) | 2009-10-23 | 2012-10-30 | Ati Technologies Ulc | Routing layer for mitigating stress in a semiconductor die |
-
2006
- 2006-02-03 JP JP2006026640A patent/JP2006165595A/ja not_active Withdrawn
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