JP2006164399A5 - - Google Patents

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Publication number
JP2006164399A5
JP2006164399A5 JP2004354520A JP2004354520A JP2006164399A5 JP 2006164399 A5 JP2006164399 A5 JP 2006164399A5 JP 2004354520 A JP2004354520 A JP 2004354520A JP 2004354520 A JP2004354520 A JP 2004354520A JP 2006164399 A5 JP2006164399 A5 JP 2006164399A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004354520A
Other versions
JP2006164399A (ja
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Publication date
Application filed filed Critical
Priority to JP2004354520A priority Critical patent/JP2006164399A/ja
Priority claimed from JP2004354520A external-priority patent/JP2006164399A/ja
Priority to US11/266,408 priority patent/US7301840B2/en
Priority to CNB2005101295595A priority patent/CN100468570C/zh
Publication of JP2006164399A publication Critical patent/JP2006164399A/ja
Publication of JP2006164399A5 publication Critical patent/JP2006164399A5/ja
Pending legal-status Critical Current

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JP2004354520A 2004-12-07 2004-12-07 半導体記憶装置 Pending JP2006164399A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004354520A JP2006164399A (ja) 2004-12-07 2004-12-07 半導体記憶装置
US11/266,408 US7301840B2 (en) 2004-12-07 2005-11-04 Semiconductor memory device
CNB2005101295595A CN100468570C (zh) 2004-12-07 2005-12-06 半导体存储器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004354520A JP2006164399A (ja) 2004-12-07 2004-12-07 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2006164399A JP2006164399A (ja) 2006-06-22
JP2006164399A5 true JP2006164399A5 (ja) 2007-12-20

Family

ID=36573989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004354520A Pending JP2006164399A (ja) 2004-12-07 2004-12-07 半導体記憶装置

Country Status (3)

Country Link
US (1) US7301840B2 (ja)
JP (1) JP2006164399A (ja)
CN (1) CN100468570C (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008097787A (ja) * 2006-10-16 2008-04-24 Toshiba Corp 半導体記憶装置
KR100784866B1 (ko) * 2006-12-13 2007-12-14 삼성전자주식회사 쓰기 시간을 줄일 수 있는 불 휘발성 메모리 장치 및그것을 포함한 메모리 카드
US7630264B2 (en) * 2007-07-24 2009-12-08 Infineon Technologies Ag Memory device and testing with write completion detection
TWI381380B (zh) * 2008-09-18 2013-01-01 Aicestar Technology Suzhou Corp 靜態隨機存取記憶體及其形成與控制方法
US7876600B2 (en) * 2008-11-17 2011-01-25 AiceStar Technology (Suzhou) Corporation SRAM and method of controlling the SRAM
JP4802257B2 (ja) * 2009-03-16 2011-10-26 株式会社東芝 半導体記憶装置
CN102355013B (zh) * 2011-08-22 2013-09-18 北京兆易创新科技股份有限公司 一种灵敏放大器的预充电控制电路
US8902636B2 (en) 2013-03-22 2014-12-02 Akira Katayama Resistance change memory
CN105761748B (zh) * 2016-02-23 2018-05-25 宁波大学 一种防御差分功耗分析的静态随机存储器
CN107293323B (zh) * 2016-04-05 2020-04-10 中芯国际集成电路制造(上海)有限公司 写操作追踪电路及包括写操作追踪电路的存储器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08190792A (ja) * 1995-01-04 1996-07-23 Nec Corp スタティックｒａｍ
JPH08273365A (ja) * 1995-03-31 1996-10-18 Nec Corp 半導体記憶装置
JP3596937B2 (ja) * 1995-05-11 2004-12-02 株式会社ルネサステクノロジ 半導体記憶装置
JPH09128958A (ja) * 1995-11-01 1997-05-16 Sony Corp 半導体メモリ装置
JP3498450B2 (ja) 1995-11-21 2004-02-16 株式会社日立製作所 半導体回路
US5596539A (en) * 1995-12-28 1997-01-21 Lsi Logic Corporation Method and apparatus for a low power self-timed memory control system
DE69723226D1 (de) * 1997-04-03 2003-08-07 St Microelectronics Srl Speicheranordnung mit vermindertem Leistungsverlust
JPH1196768A (ja) 1997-09-17 1999-04-09 Nec Corp 半導体集積回路
US6201757B1 (en) * 1998-08-20 2001-03-13 Texas Instruments Incorporated Self-timed memory reset circuitry
US6392957B1 (en) * 2000-11-28 2002-05-21 Virage Logic Corporation Fast read/write cycle memory device having a self-timed read/write control circuit
JP4837841B2 (ja) * 2001-06-12 2011-12-14 富士通セミコンダクター株式会社 スタティックｒａｍ
JP4339532B2 (ja) * 2001-07-25 2009-10-07 富士通マイクロエレクトロニクス株式会社 セルフタイミング回路を有するスタティックメモリ
JP4152668B2 (ja) * 2002-04-30 2008-09-17 株式会社ルネサステクノロジ 半導体記憶装置
JP4090967B2 (ja) * 2003-08-29 2008-05-28 松下電器産業株式会社 半導体記憶装置

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