JP2006156984A - Apparatus and method of laser irradiating - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus of laser irradiating which can perform a laser treatment uniformly to a whole semiconductor film surface and to provide a method of laser irradiating. <P>SOLUTION: A laser beam oscillated from a large laser crystal of a wavelength region and a beam homogenizer are used. Since the laser beam with the large wavelength region has weak coherence, a semiconductor film is not made to produce an interference pattern by an interference. Moreover, since a line beam exceeding several meters in the length of a transverse axis can be formed, the throughput of a laser anneal process is improved. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a laser irradiation apparatus (laser and an optical system for guiding a laser beam output from the laser to an irradiation object) for uniformly and efficiently performing annealing as performed on a semiconductor material or the like. And a laser irradiation method. Further, the present invention relates to a method for manufacturing a semiconductor device including the above laser treatment process.

  In recent years, a technique for manufacturing a thin film transistor (hereinafter referred to as TFT) on a substrate has greatly advanced, and application development to an active matrix display device has been advanced. In particular, a TFT using a polycrystalline semiconductor film has higher field effect mobility (also referred to as mobility) than a conventional TFT using a non-single-crystal semiconductor film, and thus can operate at high speed. For this reason, attempts have been made to control a pixel, which is conventionally performed by a driving circuit provided outside the substrate, using a driving circuit formed on the same substrate as the pixel.

  By the way, as a substrate used for a semiconductor device, a glass substrate is more promising than a single crystal semiconductor substrate in terms of cost. Since glass substrates are inferior in heat resistance and easily deformed by heat, when crystallizing a semiconductor film to form a TFT using a polycrystalline semiconductor film on the glass substrate, in order to avoid thermal deformation of the glass substrate Laser annealing is used.

  The characteristics of laser annealing are that the processing time can be significantly shortened compared to annealing methods using radiation heating or conduction heating, and the semiconductor substrate or semiconductor film is selectively and locally heated, causing almost thermal damage to the substrate. Is not given.

  Laser oscillators used for laser annealing are roughly classified into two types, pulse oscillation and continuous oscillation, depending on the oscillation method. For laser annealing, a pulsed laser beam such as an excimer laser is often used. The excimer laser has the advantage that it has a large output and can be repeatedly irradiated at a high frequency, and the laser beam oscillated from the excimer laser has the advantage that the absorption coefficient for a silicon film often used as a semiconductor film is high. . When irradiating a laser beam, the optical system is shaped so that the shape of the laser beam on the irradiation surface is linear, and the irradiation position is moved relative to the irradiation surface. It is industrially superior because of its high productivity (see Patent Document 1).

  A linear beam is a laser beam whose shape on the irradiation surface is linear. The term “linear” as used herein does not mean “line” in a strict sense, but means a rectangle having a large aspect ratio (for example, an aspect ratio of 10 or more (preferably 100 or more)). Note that the linear shape is used to ensure sufficient energy density for annealing the irradiated object. Even if the object is rectangular or planar, sufficient annealing is performed on the irradiated object. It only has to be done.

In recent years, in the crystallization of a semiconductor film, a continuous oscillation laser oscillator (hereinafter referred to as a CW laser) such as an Ar laser or a YVO ₄ laser, or a repetition frequency is used rather than a pulse oscillation laser oscillator such as an excimer laser. It has been found that the crystal grain size formed in the semiconductor film becomes larger when a laser oscillator (mode-locked pulse laser) having a very high pulse oscillation is used. As the crystal grain size in the semiconductor film increases, the number of grain boundaries included in the channel region of the TFT formed using this semiconductor film decreases. Therefore, the mobility becomes high and it can be used for the development of a higher performance device. (Hereinafter, such a crystal having a large crystal grain size is referred to as a large grain crystal.)

  The wavelength of a fundamental wave oscillated by a solid-state laser generally used for laser annealing is a wavelength region extending from red to near infrared. However, the visible to ultraviolet wavelength region has higher energy absorption efficiency into the semiconductor film than this wavelength region. Therefore, in general, a non-linear optical element is used to convert a fundamental wave, which is easy to obtain a large output, into a harmonic wave to obtain visible light, which is used for annealing a semiconductor film.

For example, a laser beam oscillated by a 10 W, 532 nm CW laser is a linear beam having a major axis direction of 300 μm and a minor axis direction of about 10 μm, and the semiconductor beam is crystallized by scanning the linear beam in the minor axis direction of the beam spot In this case, the width of the large grain crystal region obtained by one scan is about 200 μm (hereinafter, a region where the large grain crystal is seen is referred to as a large grain region). That is, laser annealing is performed according to the following procedure. First, a laser beam is scanned in the minor axis direction of the beam spot. Next, the laser beam scanning position is shifted in the major axis direction of the beam spot. The width to shift is the width of the large grain size region obtained by one scan. That is, in the above example, the shifting width is 200 μm. Next, scanning is performed again in the minor axis direction of the beam spot. By alternately repeating the irradiation of the laser beam and shifting the irradiation position, the entire surface of the substrate is irradiated with the laser beam to crystallize the semiconductor film.
Japanese Patent Application Laid-Open No. 2003-257885

  Here, the irradiation spot in the semiconductor film of the beam spot and the intensity distribution in the cross section of the beam spot are shown.

  In general, a cross section a-a ′ of a laser beam emitted from a laser oscillator has a Gaussian intensity distribution as shown in FIG. 24, and does not have a uniform intensity distribution.

  For example, the region near the center of the beam spot has an energy density greater than a threshold value (y) at which a large grain crystal is formed. However, the energy density in the region near the end of the beam spot is higher than the threshold value (x) at which the crystalline region is formed, but is lower than the threshold value (y). For this reason, when the semiconductor film is irradiated with a laser beam, a region that cannot be partially melted remains in the region near the end of the beam spot, and there is a large particle size that is formed in the region 2401 near the center. Instead of crystals, crystal grains having a relatively small grain size are formed. That is, the energy density distribution of the laser beam is reflected in the crystallinity of the surface of the semiconductor film, resulting in uneven crystallinity.

  In particular, when laser annealing is performed after shaping the CW laser beam into a linear beam, the influence of a decrease in the intensity of the CW laser beam at both ends in the major axis direction of the linear beam is large. In the region irradiated with the CW laser beam with the energy not lower than the threshold value (x) and not higher than the threshold value (y) in FIG. 24, the crystallization occurs but the large grain crystal is not formed (hereinafter referred to as poor crystallinity). 2402) is formed. In this region 2402, unevenness is conspicuous on the surface of the semiconductor film, which is not suitable for manufacturing a TFT.

  When a TFT is formed using the semiconductor film thus manufactured, it is difficult to make the electron mobility of each TFT uniform. Furthermore, when a display using EL (electroluminescence), liquid crystal, or the like is manufactured using the TFT manufactured as described above, a striped pattern due to uneven crystallinity may appear.

  Therefore, when a highly reliable TFT is manufactured, it is necessary to accurately position the TFT so that the TFT is not formed in the poor crystallinity region 2402.

  In addition, since the intensity distribution of the laser beam used for laser annealing is a Gaussian distribution type, if the length of the linear beam in the long axis direction is increased, the end portion with low intensity is stretched, resulting in a poorly crystalline region. 2402 spreads. Therefore, a region where a TFT can be formed over the entire substrate is reduced, and it becomes difficult to manufacture a highly integrated semiconductor device.

  The above problem can be solved by making the intensity distribution of the laser beam not a Gaussian shape but a shape with uniform intensity and a steep tail. As means for making the intensity distribution of the laser beam uniform, a diffractive optical element (diffractive optics), an optical waveguide (light pipe), and a lens array in which a plurality of lenses are arranged on one plane (cylindrical lens array, fly-eye lens) Etc. By using such means, the intensity distribution of the laser beam is made uniform and the skirt portion is made steep, so that the crystallinity that can be formed after laser annealing can be made uniform, and the poor crystallinity region can be reduced. . By making the intensity distribution of the laser beam uniform, the area of the poor crystallinity region can be kept small regardless of the length of the linear beam.

  However, among the above-mentioned means for making the intensity distribution of the laser beam uniform, the diffractive optical element is technically difficult because fine processing with nanometer precision is required to obtain good characteristics. There are many points, and the optical transmittance is also low. In addition, the cost is high. In addition, when a single laser beam is divided into a plurality of paths and then combined again using a lens array such as a cylindrical lens array or fly-eye lens, or a beam homogenizer such as a light pipe, a single wavelength laser is used. Since the beam has good coherence, the intensity of the laser beam appears on the irradiated surface as interference fringes.

  It is an object of the present invention to obtain a linear beam having a uniform energy distribution without causing interference fringes due to laser coherence. In particular, when a CW laser or a mode-locked pulse laser is used, it is an object to increase the area of a large grain size region as much as possible and to reduce the area of a crystallinity defect region. On the other hand, an object of the present invention is to form a linear beam exceeding several meters in length using a high-power laser with a relatively low repetition frequency of pulse oscillation, and to dramatically improve the throughput of the laser annealing process.

  As means for solving the above problems, the present invention adopts the following configuration. The laser annealing method here refers to a technique for recrystallizing a damaged layer or an amorphous layer formed on a semiconductor substrate or semiconductor film, or a technique for crystallizing an amorphous semiconductor film formed on a substrate. pointing. In addition, a technique applied to planarization or surface modification of a semiconductor substrate or semiconductor film, a technique of performing laser irradiation after introducing an element for promoting crystallization, such as nickel, into an amorphous semiconductor film, a semiconductor having crystallinity It also includes a technique for irradiating the film with a laser.

  The present invention has the following configuration.

  One of the inventions disclosed in the present invention is a laser oscillator having a wide oscillation wavelength range, a beam homogenizer that uniformizes the intensity distribution of the laser beam emitted from the laser oscillator, and an irradiation surface of the laser beam with respect to the laser beam. And means for relatively moving.

  Another aspect of the invention disclosed in the present invention is a laser oscillator having a wide oscillation wavelength range, a beam homogenizer that equalizes the intensity distribution of the laser beam emitted from the laser oscillator, a condenser lens, and the passage of the laser beam. It has means for projecting the image of the condensing lens on the irradiation surface on the line, and means for moving the irradiation surface relative to the laser beam.

  Another aspect of the invention disclosed in the present invention is that a laser oscillator having a wide oscillation wavelength range, a beam homogenizer for uniformizing the intensity distribution of the laser beam emitted from the laser oscillator, and an end portion where the intensity of the laser beam is weak are provided. A slit for blocking, a projection lens for projecting an image of the slit onto the irradiation surface, a condenser lens, and a means for moving the irradiation surface relative to the laser beam. .

  Note that a laser having a wide oscillation wavelength range refers to a laser capable of performing laser oscillation with a wide range of wavelengths with respect to the excitation light source, that is, a laser in which the oscillated laser beam has a spectral width. Specifically, the spectral width may be 0.1 nm or more.

In the structure of the present invention, as a laser crystal having a wide oscillation wavelength range, Sapphire, YAG, ceramics YAG, ceramics Y ₂ O ₃ , KGW, KYW, Mg ₂ SiO ₄ , YLF, YVO ₄ , or GdVO ₄ can be used as Nd. , Yb, Cr, Ti, Ho, and Er can be used. In order to broaden the oscillation wavelength range, it is preferable to use a laser crystal to which a plurality of dopants are added to form a laser oscillator. There is also a laser that enables multi-wavelength oscillation with one kind of dopant, such as a Ti: Sapphire laser.

  Some laser beams oscillated from the above laser crystal have extremely high output, and the length of the linear beam for laser annealing the semiconductor film, that is, the length of the laser spot in the major axis direction is several. It is possible to make it more than a meter. For example, in the case of using ceramics YAG, it is possible to make a large ceramic without the time and cost for manufacturing as compared with YAG crystals. This is the same when other ceramics are used. For this reason, it is possible to make the length in the major axis direction of the beam longer than other lasers at the stage of emission from the laser oscillator. In addition, since the shape of ceramics can be freely changed, for example, a rectangular parallelepiped rod can be formed to oscillate a square beam.

  A laser beam having a wide oscillation wavelength range as mentioned above has a weak coherence. Therefore, even if a laser beam homogenizer such as a cylindrical lens array, a light pipe, or a fly-eye lens is used to separate one laser beam into a plurality of paths and then combine it at one place, interference fringes due to the laser beam are generated on the irradiated surface. Since it does not occur, the semiconductor film can be uniformly annealed.

In the configuration of the above invention, since the beam homogenizer can be considered as forming a beam emitted from a plurality of slits, the period of interference fringes formed by the beam homogenizer can be calculated using the multiple slits as a model. . In other words, the interval x between the interference fringes at a certain wavelength λ can be expressed by the following equation using the distance L between the multiple slits and the irradiation surface and the distance d between the slits in the multiple slits.

  FIG. 1 shows the distance x between the interference fringes with respect to the wavelength λ when the distance d between the multiple slits is 2 mm and the distance L between the multiple slits and the irradiation surface is 1000 mm. It can be seen that the interference fringe spacing x increases linearly with respect to the wavelength λ. Therefore, the interference fringes generated by the laser beam having a wide oscillation wavelength range are formed by mixing various standing waves, and the pattern becomes unclear and cannot be visually recognized.

  In the configuration of the invention described above, the condensing lens is one or two convex cylindrical lenses or convex spherical lenses.

  By using the present invention, it is possible to obtain a linear beam having a uniform energy distribution without causing laser interference fringes on a semiconductor film. In particular, when using a CW laser or a mode-locked pulse laser, it is possible to increase the area of the large grain size region as much as possible and reduce the area of the poor crystallinity region. On the other hand, since it becomes possible to form a linear beam with a length of several meters using a high-power laser with a relatively low repetition rate of pulse oscillation, the throughput of laser annealing can be achieved by using this linear beam. Is significantly improved.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and it is easy for those skilled in the art to change the modes and details in various ways without departing from the spirit and scope of the present invention. Understood. Therefore, the present invention is not construed as being limited to the description of this embodiment mode.

  In an embodiment of the present invention, a laser beam emitted from a laser oscillator 201 that emits a mode-locked pulse laser that oscillates multiple wavelengths and has a repetition frequency of 10 MHz or more is shaped into a linear beam by an optical system, and the semiconductor film 204 An example of irradiating the substrate on which the film is formed will be described with reference to FIG.

  Although most lasers generally oscillate at a single wavelength, some lasers stimulate and emit light over a wide range of wavelengths. That is, a laser beam oscillated from such a laser has a spectral width. In solid-state lasers, various energy levels are created by changing the relative positional relationship by changing the distance between the host crystal and the light-emitting atom, resulting in laser transitions that fall into the excited and lower levels. The laser beam can be emitted with a wide range of wavelengths. In addition, when a medium in which a plurality of types of light-emitting atoms are introduced into a base crystal is formed, various energy levels can be generated, so that a laser beam can be emitted in a wide range of wavelengths. By using such a medium, a laser beam is oscillated with a wide range of wavelengths with respect to the excitation light source. In this specification, a laser that oscillates at multiple wavelengths refers to the above laser. Specifically, the spectral width may be 0.1 nm or more.

  In FIG. 2, a laser beam emitted from a laser oscillator 201 of a mode-locked pulse laser is divided into a plurality of laser beams by a cylindrical lens array 202. Next, the divided laser beam is deflected by the mirror 203 toward the substrate on which the semiconductor film 204 is formed.

  Thereafter, light is condensed by cylindrical lenses 205 and 206 acting in the major axis direction and minor axis direction of the laser beam. In the embodiment of the present invention, two cylindrical lenses are used as condensing lenses. One of the cylindrical lenses 205 and 206 performs beam shaping in the long axis direction of the linear beam, and the other one performs beam shaping in the short axis direction of the linear beam.

  The advantage of using the cylindrical lenses 205 and 206 is that the light beams can be focused in the major axis direction and the minor axis direction independently. If the original beam diameter, output, and beam shape can be used as they are, two cylindrical lenses are not necessarily used. In addition, when focusing is performed while maintaining the ratio of the major axis to the minor axis of the original beam, a spherical lens may be used instead of the cylindrical lenses 205 and 206.

  The substrate over which the semiconductor film 204 is formed is made of glass, and is fixed to the suction stage 207 so as not to drop during laser irradiation. The adsorption stage 207 repeats scanning in the X direction and the Y direction on the plane parallel to the surface of the semiconductor film 204 using the X stage 208 and the Y stage 209 to crystallize the semiconductor film 204.

  In this embodiment mode, the substrate on which the semiconductor film 204 is formed is moved using the X stage 208 and the Y stage 209. However, the laser beam scan is performed by fixing the substrate which is an object to be processed. An irradiation system moving type that moves the irradiation position of the beam, a workpiece moving type that moves the substrate while fixing the irradiation position of the laser beam, or a method that combines the above two methods can be used.

  The irradiated region where the laser beam is irradiated and crystal grains grown in the scanning direction are formed has excellent crystallinity. Therefore, by using this region as a TFT channel formation region, extremely high mobility and extremely high on-current can be expected.

  Here, the optical system of the present invention will be described in detail with reference to FIGS. Here, the numbers used in FIG. 3 are the same as those used in FIG.

  FIG. 3A is a top view of the linear beam and the optical system, and FIG. 3B is a side view of the linear beam and the optical system. The laser beam emitted from the laser oscillator 201 is divided into a plurality of laser beams by the cylindrical lens array 202. At this time, the laser beam emitted from the laser oscillator 201 has a Gaussian intensity distribution as shown by a line (a) in FIG. This laser beam is divided by the cylindrical lens array 202 on the lines (b) and (c) in FIG. Each of the divided laser beams is overlapped between the lines (b) and (c) of FIG. 4 by the cylindrical lenses 205 and 206 as shown by lines (d) and (e) in FIG. At 204, they are combined on one beam spot. The line (f) in FIG. 4 is the intensity distribution of the laser beam obtained by adding the three overlapping laser beams. Thereby, the intensity distribution of the laser beam is made uniform.

  The laser crystal of the laser oscillator 201 used in this embodiment is a Ti: sapphire crystal. The center wavelength of the fundamental wave of this laser is 800 nm, and the full width at half maximum of the oscillation wavelength is 30 nm. This fundamental wave is converted by the nonlinear optical crystal in the laser oscillator 201 into a second harmonic having a center wavelength of 400 nm and an oscillation wavelength full width at half maximum of 15 nm.

  In the present embodiment, the laser beam is divided into three and synthesized into one laser beam. However, as can be seen from the equation (1), the interval between the interference fringes for each wavelength is different. By using the laser beam, it is possible to cancel the difference in intensity of light generated by interference.

  Thereby, since the influence of interference can be reduced, the intensity distribution of the laser beam in the length direction of the linear beam can be made uniform, and the poor crystallinity region can be reduced.

  The glass substrate on which the semiconductor film 204 was formed was 100 to 1000 mm / sec. A large grain crystal can be formed on the entire surface of the semiconductor film 204 on the substrate by setting the X stage 208 and the Y stage 209 that can be moved at a speed of 5 mm and scanning and moving at an appropriate speed. The optimum scanning speed expected from the inventor's experience is 400 mm / sec. Before and after.

  A high-speed device can be manufactured by manufacturing a TFT by a known means on the semiconductor film 204 in which a large grain crystal is formed by such a method.

  In the present embodiment, an example in which a large grain crystal is produced using a CW laser having a wide oscillation wavelength range, that is, a spectral width has been described. Similarly, pulse oscillation with a wide oscillation wavelength range and a high repetition frequency is used. The present invention can also be applied to the case where laser annealing is performed by combining a laser and a beam homogenizer.

  In this embodiment, an example in which a pulse oscillation laser having a low repetition frequency and high energy per shot is used will be described with reference to FIGS.

  First, attention is focused on the side view of FIG. The laser beam emitted from the pulse laser oscillator 501 enters the cylindrical lens arrays 502 and 503. The cylindrical lens arrays 502 and 503 divide one laser beam into a plurality of laser beams in the Z-axis direction, and uniformize the intensity of the laser beam in the Z-axis direction.

  Next, the laser beam divided in the Z-axis direction is condensed into one on the virtual plane 506 by the cylindrical lens 504 acting only in the Z-axis direction. Since the surface 506 is in the middle of the optical path, the light diverges after being collected on the surface 506. Note that the cylindrical lens array 505 does not act in the Z-axis direction of the laser beam.

  The cylindrical lens 508 is disposed so that the surface 506 and the semiconductor film 509 are in a conjugate relationship. Then, the laser beam divided in the Z-axis direction is condensed so that the semiconductor film 509 forms an image again. At this time, the cylindrical lens 508 acts only in the minor axis direction of the linear beam irradiated on the semiconductor film 509.

  Next, a top view (FIG. 6A) will be described. The laser beam emitted from the pulse laser oscillator 501 is incident on the cylindrical lens arrays 502 and 503 and the cylindrical lens 504, but the cylindrical lens arrays 502 and 503 and the cylindrical lens 504 do not act in the X-axis direction of the laser beam. , As it is. Subsequently, the laser beam is incident on the cylindrical lens array 505. The cylindrical lens array 505 is arranged so that the direction of the bus line makes 90 degrees with the bus lines of the cylindrical lens arrays 502 and 503. With the cylindrical lens array 505, one laser beam is divided into a plurality of parts in the X-axis direction. The divided laser beams are focused on the same beam spot on the semiconductor film 509 by a cylindrical lens 507 acting only in the X-axis direction.

  As shown in FIG. 5, the laser beam that has passed through the cylindrical lens 507 is deflected 90 ° downward by the mirror 510 and is irradiated onto the semiconductor film 509. At this time, the cylindrical lens 507 acts only in the major axis direction of the linear beam irradiated on the semiconductor film 509.

  A glass substrate on which the semiconductor film 509 is formed is 10 mm / sec. The entire surface of the substrate can be crystallized by placing it on a stage 511 that can move at a speed of about or higher and scanning and moving at an appropriate speed.

  In the example shown in this embodiment, it is considered that an interference fringe is generated because the laser beam is divided into a plurality of parts and condensed into one laser beam. However, from equation (1), it can be seen that the spacing of the interference fringes for each wavelength is different. For this reason, when a laser beam having a wide oscillation wavelength region is used, the difference in intensity of light generated by interference can be canceled and the influence of interference can be reduced. As a result, the intensity distribution of the linearly shaped laser beam can be made uniform.

  The laser crystal of the laser oscillator 501 used in this embodiment is ceramic YAG. Multi-wavelength oscillation is obtained by adding a plurality of types of dopants such as Nd and Yb to the ceramic YAG. The center wavelength of the fundamental wave of this laser is 1030 to 1064 nm, and the full width at half maximum of the oscillation wavelength is about 30 nm. This fundamental wave is converted into a second harmonic wave having a center wavelength of 515 to 532 nm and a full width at half maximum of the oscillation wavelength of about 15 nm by the nonlinear optical crystal in the laser oscillator 501.

  The laser crystal ceramic YAG used in this example can be made larger in a shorter time and at a lower cost than the YAG crystal. Further, the shape of the ceramic YAG can be freely designed in accordance with the shape of the laser beam applied to the semiconductor film. For this reason, at the stage of emission from the laser oscillator 501, the length of the beam in the long axis direction can be made longer than that of other lasers.

Since the laser used in this embodiment uses ceramic for the laser crystal, the laser crystal can be made very large. Therefore, the output is very high, and the area of the linear beam can be 1 cm ² or more. By shaping the beam using an optical system, it is possible to obtain a linear beam having a major axis length of several hundreds of millimeters to several meters. In general, the panel size of a display manufactured using a process using a linear beam is limited by the length of the linear beam. For this reason, it becomes possible to produce a larger display by obtaining a longer linear beam using the present invention.

  A TFT can be manufactured by a method as shown in Example 2 on a semiconductor film laser-crystallized by such a method. In the second embodiment, an example in which a semiconductor film is crystallized using a continuous wave ceramic laser is shown. However, the pulsed laser shown in this embodiment may be used instead.

  Note that this embodiment can be freely combined with other embodiments.

  In this embodiment, a process of manufacturing a thin film transistor (TFT) using the laser annealing apparatus of the present invention is shown. Note that although a manufacturing method of a top gate type (forward stagger type) TFT is described in this embodiment, the present invention is similarly applied to a bottom gate type (reverse stagger type) TFT or the like as well as the top gate type TFT. be able to.

  As shown in FIG. 7A, a base film 701 is formed over a substrate 700 having an insulating surface. In this embodiment, a glass substrate is used as the substrate 700. As the substrate used here, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, a stainless steel substrate, or the like can be used. In addition, raw materials are plastics typified by PET (Polyethylene Terephthalate), PES (Polyethersulfone Resin: Polyethersulfone Resin), PEN (Polyethylene Naphthalate), and synthetic resins typified by acrylic. In general, the substrate has a lower heat-resistant temperature than other substrates, but any substrate can be used as long as it can withstand the process of this step.

  The base film 701 is provided in order to prevent alkali metal such as sodium or alkaline earth metal contained in the substrate 700 from diffusing into the semiconductor and adversely affecting the characteristics of the semiconductor element. Therefore, an insulating film such as silicon oxide, silicon nitride, or silicon nitride oxide that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor is used. Further, the base film 701 may be either a single layer or a stacked structure. In this embodiment, a silicon nitride oxide film is formed to a thickness of 10 to 400 nm by a plasma CVD method (Chemical Vapor Deposition).

  Note that in the case where a substrate containing an alkali metal or an alkaline earth metal, such as a glass substrate or a plastic substrate, is used as the substrate 700, a base film may be provided to prevent impurity diffusion. Although effective, a base film 701 is not necessarily provided when a substrate such as a quartz substrate that does not cause much problem of impurity diffusion is used.

  Next, an amorphous semiconductor film 702 is formed over the base film 701. The amorphous semiconductor layer 702 is formed with a thickness of 25 to 100 nm (preferably 30 to 60 nm) by a known method (a sputtering method, an LPCVD method, a plasma CVD method, or the like). As the amorphous semiconductor film used here, silicon, silicon germanium, or the like can be used; here, silicon is used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%.

  Subsequently, as shown in FIG. 7B, crystallization is performed by irradiating the amorphous semiconductor film 702 with a laser 703 using the laser annealing apparatus of the present invention. In this embodiment, a continuous wave ceramic YAG laser is used as the laser 703. Multiple types of dopants such as Nd and Yb are added to the laser crystal of ceramic YAG to obtain multiwavelength oscillation. The center wavelength of the fundamental wave of this laser is 1030 to 1064 nm, and the full width at half maximum of the oscillation wavelength is about 30 nm. This fundamental wave is converted into a second harmonic wave having a center wavelength of 515 to 532 nm and a full width at half maximum of the oscillation wavelength of about 15 nm by a nonlinear optical crystal in the laser oscillator, and is irradiated through a cylindrical lens 704.

Not only the lasers listed here, but also Sapphire, YAG, ceramics YAG, ceramics Y ₂ O ₃ , KGW, KYW, Mg ₂ SiO ₄ , YLF, YVO ₄ , or GdVO ₄ crystals, Nd, Yb, Cr, Ti A laser oscillator or the like using a laser crystal to which any one or a plurality of dopants, Ho, and Er are added can be used. In order to broaden the oscillation wavelength range, it is preferable to use a laser crystal to which a plurality of dopants are added to form a laser oscillator. There is also a laser that enables multi-wavelength oscillation with one kind of dopant, such as a Ti: Sapphire laser. The laser 703 is converted into a harmonic by a known nonlinear optical element. In this embodiment, the laser 703 is converted to the second harmonic by the nonlinear optical element, but may be a harmonic other than the second harmonic.

  By using the above method, it is possible not only to form crystal grains that are continuously grown in the scanning direction, but also to suppress the formation of microcrystalline regions and irregularities at the boundary between adjacent laser irradiation regions. become. Note that in order to form a crystalline semiconductor film with high throughput, it is preferable to perform irradiation so that a laser irradiation region adjacent to only a microcrystalline region overlaps as much as possible.

  As described above, by uniformly annealing the semiconductor film, the characteristics of the electronic device manufactured using the semiconductor film can be made favorable and uniform.

  After that, as illustrated in FIG. 7C, the crystalline semiconductor film 705 formed by laser beam irradiation is shaped into an arbitrary shape, so that an island-shaped semiconductor film 706 is formed. Further, a gate insulating film 707 is formed so as to cover the island-shaped semiconductor film 706.

The gate insulating film 707 may be an insulating film containing at least oxygen or nitrogen, and may be a single layer or a multilayer. As a film formation method at that time, a plasma CVD method or a sputtering method can be used. In this embodiment, silicon nitride oxide (SiN _x O _y (x> y, x, y = 1, 2, 3,...)) And silicon oxide silicon (SiO _x N _y (x > Y, where x, y = 1, 2, 3,...)) Were continuously formed to form a total film thickness of 115 nm. Note that in the case where a TFT having a channel length of 1 μm or less (also referred to as a submicron TFT) is formed, the gate insulating film 707 is preferably formed with a thickness of 10 to 50 nm.

  Next, a conductive film is formed over the gate insulating film 707 and shaped into an arbitrary shape, whereby the gate electrode 708 is formed. The outline is as follows. First, the material of the conductive film formed on the gate insulating film 707 may be a conductive film. In this embodiment, a laminated film of W (tungsten) and TaN (tantalum nitride) is used. A conductive film in which Mo, Al, and Mo are stacked in this order using (aluminum) and Mo (molybdenum), or a conductive film that is stacked in the order of Ti, Al, and Ti using Ti (titanium) and Al may be used. In addition, an element selected from gold (Au), silver (Ag), copper (Cu), platinum (Pt), aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), or these A synthetic material or a compound material containing an element as a main component can be used. Furthermore, a laminate of these materials can also be used.

  Then, a resist mask for patterning this conductive film is formed. First, a photoresist is applied on the conductive film by a spin coating method or the like, and exposure is performed. Next, heat treatment (pre-bake) is performed on the photoresist. The pre-baking temperature is 50 to 120 ° C., which is lower than the post-baking performed later. In this example, the heating temperature was 90 ° C. and the heating time was 90 seconds.

  Next, the exposed resist is developed by dropping a developer onto the photoresist or spraying the developer from a spray nozzle.

  Thereafter, the developed photoresist is subjected to a so-called post-bake in which heat treatment is performed at 125 ° C. for 180 seconds to remove moisture remaining in the resist mask, and at the same time, stability against heat is enhanced. A resist mask is formed by the above steps. Based on this resist mask, the conductive film is shaped into an arbitrary shape to form the gate electrode 708.

  Note that as another method, the gate electrode 708 may be directly formed over the gate insulating film 707 by a droplet discharge method typified by a printing method or an inkjet method capable of discharging a material to a predetermined place. Good.

  As a material to be discharged, a material obtained by dissolving or dispersing a conductive material in a solvent is used. Materials used for the conductive film are gold (Au), silver (Ag), copper (Cu), platinum (Pt), aluminum (Al), chromium (Cr), palladium (Pd), indium (In), molybdenum (Mo) ), Nickel (Ni), lead (Pd), iridium (Ir), rhodium (Rh), tungsten (W), cadmium (Cd), zinc (Zn), iron (Fe), titanium (Ti), zirconium (Zr) ), Barium (Ba) or other metals, or an alloy of these metals. Examples of the solvent include esters such as butyl acetate and ethyl acetate, alcohols such as isopropyl alcohol and ethyl alcohol, and organic solvents such as ketones such as methyl ethyl ketone and acetone.

  Moreover, the viscosity of a composition shall be 300 cp or less. This is for preventing drying and smoothly discharging the composition from the discharge port. Note that the viscosity and surface tension of the composition may be appropriately adjusted according to the solvent to be used and the application.

  Then, using the gate electrode 708 or the resist used for forming the gate electrode 708 as a mask, by selectively adding an impurity imparting n-type or P-type conductivity to the island-shaped semiconductor film 706, A source region 709, a drain region 710, an LDD region 711, and the like are formed. Through the above steps, N-channel TFTs 712 and 713 and a P-channel TFT 714 can be formed over the same substrate (FIG. 7D).

  Subsequently, as illustrated in FIG. 7D, an insulating film 715 is formed as a protective film thereof. The insulating film 715 is formed by a plasma CVD method or a sputtering method to form a silicon nitride film or a silicon nitride oxide film with a thickness of 100 to 200 nm with a single layer or a stacked structure. In the case of combining a silicon nitride oxide film and a nitrogen oxide silicon film, continuous film formation can be performed by switching gases. In this embodiment, a silicon oxynitride film having a thickness of 100 nm is formed by plasma CVD. By providing the insulating film 715, it is possible to obtain a blocking action that prevents entry of various ionic impurities including oxygen and moisture in the air.

  Next, an insulating film 716 is further formed. Here, polyimide, polyamide, BCB (benzocyclobutene), acryl, and siloxane (a skeleton structure is formed by a bond of silicon and oxygen, which is applied by SOG (Spin On Glass) method or spin coating method, fluorine on silicon, An organic resin film such as an aliphatic hydrocarbon or a substance having a structure in which at least one of aromatic hydrocarbons is bonded), an inorganic interlayer insulating film (an insulating film containing silicon such as silicon nitride or silicon oxide), low-k (Low dielectric constant) materials can be used. The insulating film 716 is preferably a film having excellent flatness because it has a strong meaning of relaxing and flattening unevenness caused by TFTs formed over a glass substrate.

  Further, the gate insulating film 707, the insulating film 715, and the insulating film 716 are patterned using photolithography to form contact holes that reach the source region 709 and the drain region 710.

  Next, a conductive film is formed using a conductive material, and the wiring 717 is formed by patterning the conductive film. After that, when an insulating film 718 is formed as a protective film, a semiconductor device as shown in FIG. 7D is completed.

  A method for manufacturing a semiconductor device using the laser annealing method of the present invention is not limited to the above-described TFT manufacturing process. By using a semiconductor film crystallized by the laser beam irradiation method of the present invention as an active layer of a TFT, variations in mobility, threshold value, and on-current between elements can be suppressed.

  Further, a crystallization step using a catalytic element may be provided before crystallization with a laser beam. Nickel (Ni) is used as the catalyst element, but germanium (Ge), iron (Fe), palladium (Pd), tin (Sn), lead (Pb), cobalt (Co), platinum ( Elements such as Pt), copper (Cu), and gold (Au) can be used.

  Note that after adding a catalytic element and performing heat treatment to promote crystallization, laser beam irradiation may be performed, or the heat treatment step may be omitted. Further, after the heat treatment, the laser treatment may be performed while maintaining the temperature.

  In this embodiment, an example in which the laser irradiation method of the present invention is used for crystallization of a semiconductor film is shown, but the semiconductor film may be used to activate an impurity element doped. The method for manufacturing a semiconductor device using the present invention can also be used for a method for manufacturing an integrated circuit or a semiconductor display device.

  In addition, when the present invention is used, the semiconductor film is uniformly annealed. Therefore, all TFTs manufactured using the semiconductor film formed by the method of the present invention have good characteristics, and the characteristics of individual TFTs are uniform.

  In addition, this embodiment can be freely combined with the embodiment mode and other embodiments.

  In this embodiment, an example in which crystallization is performed more satisfactorily by combining a crystallization method using a laser irradiation apparatus of the present invention with a crystallization method using a catalytic element will be described.

  First, as shown in FIG. 8A, steps up to forming a base film 801 over a substrate 800 and forming a semiconductor film 802 over the base film 801 are performed with reference to Example 2. Next, as shown in FIG. 4B, a solution containing 10 to 100 ppm of Ni in terms of weight, for example, a solution of a nickel compound such as nickel acetate is applied to the surface of the semiconductor film 802 by a spin coating method. Note that the dotted line in FIG. 8B indicates that a catalyst element has been added. The addition of the catalyst is not limited to the above method, and may be added using a sputtering method, a vapor deposition method, a plasma treatment, or the like.

  And it heat-processes at 500-650 degreeC for 4 to 24 hours, for example, 570 degreeC and 14 hours. By this heat treatment, a semiconductor film 803 in which crystallization is promoted in the vertical direction from the surface coated with the nickel acetate solution toward the substrate 800 is formed (FIG. 8C).

  The heat treatment may be performed by RTA (Rapid Thermal Anneal) using the radiation of the lamp as a heat source or RTA (gas RTA) using a heated gas at a set heating temperature of 740 ° C. for 180 seconds. The set heating temperature here is the temperature of the substrate measured with a pyrometer, and this temperature is set as the set temperature during heat treatment. In addition, there is a heat treatment for 4 hours at 550 ° C. using a furnace annealing furnace, which may be used for heat treatment. The lowering and shortening of the crystallization temperature is due to the action of a catalytic metal element.

  In this embodiment, nickel (Ni) is used as a catalyst element. In addition, germanium (Ge), iron (Fe), palladium (Pd), tin (Sn), lead (Pb), cobalt Elements such as (Co), platinum (Pt), copper (Cu), and gold (Au) may be used.

  Next, as illustrated in FIG. 8D, the semiconductor film 803 is crystallized using the laser irradiation apparatus described in Embodiment 1. The laser crystal of the laser oscillator used in this example is ceramic YAG. Multiple types of dopants such as Nd and Yb are added to the laser crystal of ceramic YAG to obtain multiwavelength oscillation. The center wavelength of the fundamental wave of the laser 804 is 1030 to 1064 nm, and the full width at half maximum of the oscillation wavelength is about 30 nm. This fundamental wave is converted into a second harmonic wave having a center wavelength of 515 to 532 nm and a full width at half maximum of the oscillation wavelength of about 15 nm by a nonlinear optical crystal in the laser oscillator.

By irradiating the semiconductor film 803 with the laser beam 804, a semiconductor film 805 with higher crystallinity is formed. Note that it is considered that the semiconductor element 805 crystallized using the catalytic element contains the catalytic element (Ni in this case) at a concentration of about 1 × 10 ¹⁹ atoms / cm ³ . Next, gettering of the catalytic element present in the semiconductor film 805 is performed. Since gettering can remove a metal element mixed in the semiconductor film, off-state current can be reduced.

  First, as shown in FIG. 9A, an oxide film 806 is formed on the surface of the semiconductor film 805. By forming the oxide film 806 having a thickness of about 1 nm to 10 nm, the surface of the semiconductor film 805 can be prevented from being roughened by etching in a later etching step. Note that the oxide film 806 can be formed by a known method. For example, the surface of the semiconductor film 805 may be oxidized by an aqueous solution in which sulfuric acid, hydrochloric acid, nitric acid, and the like are mixed with hydrogen peroxide water or ozone water, or plasma treatment in an atmosphere containing oxygen Alternatively, it may be formed by heat treatment, ultraviolet irradiation or the like. In addition, an oxide film may be separately formed by a plasma CVD method, a sputtering method, a vapor deposition method, or the like.

Next, a gettering semiconductor film 807 containing a rare gas element at a concentration of 1 × 10 ²⁰ atoms / cm ³ or more is formed over the oxide film 806 to a thickness of 25 to 250 nm by a sputtering method. The gettering semiconductor film 807 preferably has a lower film density than the semiconductor film 805 in order to increase the etching selectivity with respect to the semiconductor film 805. As the rare gas element, one or more selected from helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe) are used.

  Next, as shown in FIG. 9B, heat treatment is performed using a furnace annealing method or an RTA method to perform gettering. In the case of performing furnace annealing, heat treatment is performed at 450 to 600 ° C. for 0.5 to 12 hours in a nitrogen atmosphere. When using the RTA method, the lamp light source for heating is turned on for 1 to 60 seconds, preferably 30 to 60 seconds, and this is repeated 1 to 10 times, preferably 2 to 6 times. The emission intensity of the lamp light source is arbitrary, but the semiconductor film is instantaneously heated to 600 to 1000 ° C., preferably about 700 to 750 ° C.

  By the heat treatment, the catalyst element in the semiconductor film 805 moves to the gettering semiconductor film 807 as indicated by an arrow by diffusion and is gettered.

Next, the gettering semiconductor film 807 is selectively etched and removed. Etching can be performed by dry etching without using plasma with ClF ₃ or wet etching with an alkaline solution such as an aqueous solution containing hydrazine or tetramethylammonium hydroxide ((CH ₃ ) ₄ NOH). At this time, the semiconductor film 805 can be prevented from being etched by the oxide film 806.

  Next, after the oxide film 806 is removed with hydrofluoric acid, the semiconductor film 805 is shaped into an arbitrary shape to form an island-shaped semiconductor film 808 (FIG. 9C). Various semiconductor elements typified by TFTs can be formed using this island-shaped semiconductor film 808. In the present invention, the gettering step is not limited to the method shown in this embodiment. Other methods may be used to reduce the catalytic element in the semiconductor film.

  In the case of this example, when the semiconductor film is irradiated with the laser beam, the crystal formed at the time of crystallization by the catalytic element remains without being melted on the side closer to the substrate, and this unmelted crystal is crystallized. Crystallization proceeds as a nucleus. Therefore, crystallization by laser beam irradiation easily proceeds uniformly from the substrate side toward the surface, and the crystal orientation thereof is easily aligned, so that surface roughness can be suppressed as compared with the embodiment. Therefore, variations in characteristics of semiconductor elements formed later, typically TFTs, can be further suppressed.

  Note that in this embodiment, the structure in which the crystallinity is further enhanced by laser beam irradiation after the catalyst element is added and then heat treatment is performed to promote crystallization has been described. The present invention is not limited to this, and the heat treatment step may be omitted. Specifically, after adding the catalyst element, the crystallinity may be improved by irradiating a laser beam instead of the heat treatment.

  In addition, this embodiment can be freely combined with the embodiment mode and other embodiments.

  In this embodiment, a light-emitting device using a light-emitting element formed using a TFT manufactured in another embodiment will be described. In this embodiment, a structure of a light-emitting device that extracts light from the opposite side of a substrate having an insulating surface will be described. Note that the light-emitting device that can be manufactured using the present invention is not limited to this structure, and the light-emitting device that can extract light from the side of the substrate having an insulating surface, and the substrate side having an insulating surface and the substrate It can be used for any light-emitting device that can extract light from both sides.

  FIG. 10 is a top view showing the light emitting device, and FIG. 11 is a cross-sectional view of FIG. 10 taken along A-A ′. Reference numeral 1001 indicated by a dotted line denotes a source signal line driver circuit, reference numeral 1002 denotes a pixel portion, and reference numeral 1003 denotes a gate side driver circuit. Further, 1004 is a transparent sealing substrate, 1005 is a first sealing material, and the inside surrounded by the first sealing material 1005 is filled with a transparent second sealing material 1007. Note that the first sealing material 1005 contains a gap material for maintaining the distance between the substrates.

  Reference numeral 1008 denotes a connection wiring for transmitting a signal input to the source side driver circuit 1001 and the gate side driver circuit 1003. A video signal or a clock signal is received from an FPC (flexible printed circuit) 1009 serving as an external input terminal. receive. Although only the FPC 1009 is shown here, a printed wiring board (PWB) may be attached to the FPC 1009.

  Next, a cross-sectional structure will be described with reference to FIG. A driver circuit and a pixel portion are formed over the substrate 1010. Here, a source side driver circuit 1001 and a pixel portion 1002 are shown as driver circuits.

  Note that as the source side driver circuit 1001, a CMOS circuit in which an n-channel TFT 1023 and a p-channel TFT 1024 are combined is formed. The TFT forming the driving circuit may be formed by a known CMOS circuit, PMOS circuit or NMOS circuit. In this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown. However, this is not always necessary, and the driver circuit can be formed outside the substrate. Further, the structure of a TFT having a polysilicon film as an active layer is not particularly limited, and may be a top gate type TFT or a bottom gate type TFT.

  The pixel portion 1002 is formed by a plurality of pixels including a switching TFT 1011, a current control TFT 1012, and a first electrode (anode) 1013 electrically connected to the drain thereof. The current control TFT 1012 may be an n-channel TFT or a p-channel TFT, but is preferably a p-channel TFT when connected to the anode. In addition, it is preferable to appropriately provide a storage capacitor (not shown). Note that here, only a cross-sectional structure of one pixel among the infinitely arranged pixels is shown, and an example in which two TFTs are used for the one pixel is shown. However, three or more TFTs are appropriately used. , May be used.

Here, since the first electrode (anode) 1013 is in direct contact with the drain of the TFT, the lower layer of the first electrode (anode) 1013 is a material layer that can be in ohmic contact with the drain made of silicon. The uppermost layer in contact with the layer containing an organic compound is preferably a material layer having a high work function. As the first electrode (anode), it is desirable to use one having a work function of 4.0 eV or more. For example, when a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film is used, the resistance as a wiring is low, a good ohmic contact can be obtained, and the film can function as an anode. . The first electrode (anode) 1013 is made of ITO (indium tin oxide), ITSO (a material in which indium oxide is mixed with ₂ to 20 wt% silicon oxide (SiO ₂ )), gold (Au), platinum (Pt). Nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), zinc (Zn), or metallic materials A single layer of nitride (such as titanium nitride) may be used, or a stack of three or more layers may be used.

  In addition, insulators 1014 (referred to as banks, partition walls, barriers, banks, or the like) 1014 are formed on both ends of the first electrode (anode) 1013. The insulator 1014 may be formed using an organic resin film or an insulating film containing silicon. Here, as the insulator 1014, an insulator having a shape illustrated in FIG. 11 is formed using a positive photosensitive acrylic resin film.

  In order to perform subsequent film formation satisfactorily, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 1014. For example, in the case where positive photosensitive acrylic is used as a material for the insulator 1014, it is preferable that only the upper end portion of the insulator 1014 has a curved surface with a curvature radius (0.2 μm to 3 μm). As the insulator 1014, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used.

  Alternatively, the insulator 1014 may be covered with a protective film formed of an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as its main component, or a silicon nitride film.

  Next, an electroluminescent layer 1015 is formed. As a material for forming the electroluminescent layer 1015, there are a low molecular weight, a high molecular weight, and a medium molecular weight material having properties between the low molecular weight and the high molecular weight. In this embodiment, a low molecular material is used to form the electroluminescent layer 1015 by vapor deposition. Both low molecular weight materials and high molecular weight materials can be applied by spin coating or an ink jet method by dissolving them in a solvent. Further, not only organic materials but also composite materials with inorganic materials can be used.

In addition, an electroluminescent layer 1015 is selectively formed over the first electrode (anode) 1013. For example, the degree of vacuum is 5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ Torr (that is, 1.333 × 10 ⁻⁴ Pa or more and 1.333 × 10 ⁻² Pa or less). Vapor deposition is performed in a vacuum evacuated film formation chamber. During the vapor deposition, the organic compound is vaporized in advance by heating. The vaporized organic compound is deposited to form an electroluminescent layer 1015 (a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer from the first electrode side). Note that the structure of the electroluminescent layer 1015 does not have to be such a stack, and may be a single layer or a mixed layer. Further, a second electrode (cathode) 1016 is formed on the electroluminescent layer 1015.

Note that as the second electrode 1016 (cathode), a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a low work function (a work function of 3.8 eV or less is a guide) is preferably used. Specific materials include elements belonging to Group 1 or Group 2 of the element periodic rule, that is, alkali metals such as Li, Rb, and Cs, and alkaline earth metals such as Mg, Ca, and Sr, and alloys containing these ( In addition to Mg: Ag, Al: Li) and compounds (LiF, CsF, CaF ₂ ), transition metals including rare earth metals (such as Yb) can be used. However, in this embodiment, since the second electrode (cathode) has translucency, these metals or an alloy containing these metals are formed very thinly, and ITO, IZO (indium zinc oxide): 2-20 atomic% zinc oxide mixed material), ITSO or other metals (including alloys) can be used for lamination.

  Here, a stack of a thin metal film with a small work function and a transparent conductive film (ITO, IZO, ZnO, or the like) is used as the second electrode (cathode) 1016 so that light is transmitted. Thus, an electroluminescent element 1018 including the first electrode (anode) 1013, the electroluminescent layer 1015, and the second electrode (cathode) 1016 is formed.

In this embodiment, as the electroluminescent layer 1015, Cu-Pc (20 nm) which is a hole injection layer, α-NPD (30 nm) which is a first light-emitting layer having a hole transport property, and CBP is used as a second light-emitting layer. Pt (ppy) acac: 15 wt% added material (20 nm) and BCP (30 nm) as an electron transport layer are sequentially stacked. Note that since a metal thin film having a low work function is used as the second electrode (cathode) 1016, it is not necessary to use an electron injection layer (CaF ₂ ) here.

  The electroluminescent element 1018 thus formed emits white light. Note that a color filter including a colored layer 1031 and a light-shielding layer (BM) 1032 (for the sake of simplicity, an overcoat layer is not shown here) is provided in order to realize full color.

  In addition, a transparent protective layer 1017 is formed to seal the electroluminescent element 1018. The transparent protective layer 1017 is composed of a laminate of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film. As the first inorganic insulating film and the second inorganic insulating film, a silicon nitride film, a silicon oxide film, a silicon nitride oxide film (SiNO film (composition ratio N> O)) obtained by sputtering or CVD, oxynitriding A silicon film (SiON film (composition ratio N <O)) or a thin film mainly containing carbon (for example, a DLC film or a CN film) can be used. These inorganic insulating films have a high blocking effect against moisture. However, when the film thickness is increased, the film stress is increased and peeling is likely to occur.

  However, by sandwiching the stress relaxation film between the first inorganic insulating film and the second inorganic insulating film, stress can be relaxed and moisture can be absorbed. Even if a minute hole (pinhole or the like) is formed in the first inorganic insulating film for some reason during film formation, it is filled with a stress relaxation film and a second inorganic insulating film is provided thereon. Therefore, it has a very high blocking effect against moisture and oxygen.

Further, as the stress relaxation film, a material having a lower stress than the inorganic insulating film and having a hygroscopic property is preferable. In addition, it is desirable that the material has translucency. Further, as the stress relaxation film, a film containing an organic compound such as α-NPD, BCP (Bathocuproin), MTDATA, Alq ₃ may be used. These films are hygroscopic and are almost transparent when the film thickness is thin. MgO, SrO ₂ , and SrO have hygroscopicity and translucency, and can be used as a stress relaxation film because a thin film can be obtained by an evaporation method.

In this embodiment, a film formed in an atmosphere containing nitrogen and argon using a silicon target, that is, a silicon nitride film having a high blocking effect against impurities such as moisture and alkali metal is used as the first inorganic insulating film or the first film. 2 is used as an inorganic insulating film, and an Alq ₃ thin film is used as a stress relaxation film by vapor deposition. Further, in order to allow light emission to pass through the transparent protective layer, the total thickness of the transparent protective layer is preferably as thin as possible.

  In order to seal the electroluminescent element 1018, the sealing substrate 1004 is bonded to the first sealing material 1005 and the second sealing material 1007 in an inert gas atmosphere. Note that an epoxy-based resin is preferably used as the first sealing material 1005 and the second sealing material 1007. Further, it is desirable that the first sealing material 1005 and the second sealing material 1007 are materials that do not transmit moisture and oxygen as much as possible.

  In this embodiment, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like is used as a material constituting the sealing substrate 1004 in addition to a glass substrate or a quartz substrate. it can. Further, after the sealing substrate 1004 is bonded using the first sealing material 1005 and the second sealing material 1007, it is also possible to seal with a third sealing material so as to cover the side surface (exposed surface).

  By encapsulating the electroluminescent element 1018 in the first sealing material 1005 and the second sealing material 1007 as described above, the electroluminescent element 1018 can be completely blocked from the outside, and electroluminescence such as moisture and oxygen from the outside. Intrusion of a substance that promotes deterioration of the layer 1015 can be prevented. Therefore, a highly reliable light-emitting device can be obtained.

  In addition, when a transparent conductive film is used as the first electrode (anode) 1013, a double-sided light-emitting device can be manufactured.

  This embodiment can be freely combined with the embodiment mode or other embodiments of the present invention. In addition to a display device using a light-emitting element, a display device using liquid crystal can be manufactured using a semiconductor film crystallized using the present invention.

  In this embodiment, as an example of a semiconductor device manufactured using the present invention, a process of manufacturing a CPU (Central Processing Unit) will be described with reference to FIGS.

  As shown in FIG. 12A, a base insulating film 1201 is formed over a substrate 1200 having an insulating surface. As the substrate 1200, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass can be used. In addition, plastics typified by PET, PES, PEN, and substrates made of flexible synthetic resin such as acrylic generally tend to have lower heat-resistant temperatures than other substrates. Any material that can withstand the processing temperature in the process can be used.

  The base insulating film 1201 is provided to prevent alkali metal alkaline earth metal such as Na contained in the substrate 1200 from diffusing into the semiconductor film and adversely affecting the characteristics of the semiconductor element. Therefore, an insulating film such as silicon oxide, silicon nitride, silicon oxide containing nitrogen, or the like that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film is used.

  An amorphous semiconductor film 1202 is formed over the base insulating film 1201. The thickness of the amorphous semiconductor film 1202 is 25 to 100 nm (preferably 30 to 60 nm). As the amorphous semiconductor, not only silicon but also silicon germanium can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%. Here, a semiconductor film containing 66 nm silicon as a main component (also referred to as an amorphous silicon film or amorphous silicon) is used.

  After that, as described in the embodiment mode and other examples, the amorphous semiconductor film 1202 is irradiated with the laser 1203 (FIG. 12B). By this laser irradiation, the amorphous semiconductor film 1202 is crystallized, and a semiconductor film 1204 (here, a polysilicon film) having a crystal structure is formed.

  Next, as illustrated in FIG. 12C, the semiconductor film having a crystal structure is shaped into a predetermined shape, so that island-shaped semiconductor layers 1206a to 1206e are obtained.

  Next, if necessary, a small amount of an impurity element (such as boron) is added in order to bring the threshold value, which is an electrical characteristic of the thin film transistor, closer to zero.

  Next, an insulating film covering the island-shaped semiconductor layers 1206a to 1206e, that is, a so-called gate insulating film 1208 is formed. Note that before the gate insulating film 1208 is formed, the surface of the island-shaped semiconductor layer is washed with hydrofluoric acid or the like. The gate insulating film 1208 is formed of an insulating film containing silicon with a thickness of 10 to 150 nm, preferably 20 to 40 nm, using a plasma CVD method or a sputtering method. Needless to say, the gate insulating film 1208 is not limited to the silicon oxide film, and another insulating film containing silicon (such as a silicon nitride film or a silicon oxynitride film) may be used as a single layer or a stacked structure. In the case where the gate insulating film 1208 is a stacked layer of a silicon nitride oxide film and a silicon oxynitride film, continuous film formation may be performed by switching gases.

  After that, a first conductive film 1209a and a second conductive film 1209b to be gate electrodes are formed over the gate insulating film 1208. Although the gate electrode has a two-layer structure here, it may of course be a single layer or a laminate of three or more layers. The first conductive film 1209a and the second conductive film 1209b may be formed using an element selected from Ta, W, Ti, Mo, Al, and Cu, or an alloy material or a compound material containing these elements as a main component. Good.

  Next, as illustrated in FIG. 13A, a resist mask 1210 for etching the first conductive film 1209a and the second conductive film 1209b is formed. Note that the end portion of the resist mask 1210 only needs to have a tapered shape, and the shape of the resist mask may be a sector shape or a trapezoid shape.

  Next, as illustrated in FIG. 13B, the second conductive film 1209 b is selectively etched using the resist mask 1210. Note that the first conductive film 1209a functions as a so-called etching stopper so that the gate insulating film 1208 and the semiconductor films 1206a to 1206e are not etched. The etched second conductive film 1209b has a gate length of 0.2 μm to 1.0 μm.

  Next, as illustrated in FIG. 13C, the first conductive film 1209a is etched with the resist mask 1210 provided. At this time, the first conductive film 1209a is etched under a condition where the selection ratio between the gate insulating film 1208 and the first conductive film 1209a is high. Through this step, the resist mask 1210 and the second conductive film 1209b may be slightly etched and further thinned. As described above, the gate electrode 1209 having a very small gate length of 1.0 μm or less is formed.

Next, as shown in FIG. 14A, the resist mask 1210 is removed by O ₂ ashing or resist stripping solution, and a resist mask 1215 for adding impurities is appropriately formed. Here, a resist mask 1215 is formed so as to cover a region to be a p-channel TFT.

Next, phosphorus (P) which is an impurity element is added in a self-aligning manner to the region to be the n-channel TFT using the gate electrode 1209 as a mask. Here, phosphine (PH ₃ ) is doped at 60 to 80 keV. By this step, impurity regions 1216a to 1216c are formed in a region to be an n-channel TFT.

  Next, the resist mask 1215 is removed, and a resist mask 1217 is formed so as to cover a region to be an n-channel TFT. Next, as shown in FIG. 12B, boron (B) which is an impurity element is added in a self-aligning manner using the gate electrode 1209 as a mask. By this step, impurity regions 1218a and 1218b are formed in a region to be a p-channel TFT.

  Next, after removing the resist mask 1217, as shown in FIG. 14C, insulating films covering the side surfaces of the gate electrode 1209, so-called sidewalls 1219a to 1219c, are formed. The sidewalls 1219a to 1219c can be formed by performing etching after forming an insulating film containing silicon by a plasma CVD method or a low pressure CVD (LPCVD) method.

Next, a resist mask 1221 is formed over the p-channel TFT, and phosphine (PH ₃ ) is doped at 15 to 25 keV to form high-concentration impurity regions, so-called source regions and drain regions. By this step, as shown in FIG. 14C, high-concentration impurity regions 1220a to 1220c are formed in a self-aligning manner using the sidewalls 1219a to 1219c as a mask.

Next, the resist mask 1221 is removed by O ₂ ashing or a resist stripping solution.

  Next, heat treatment for activating each impurity region is performed. Here, the impurity regions are activated using the laser irradiation method described in the embodiment mode and other examples. Alternatively, the impurity region may be activated by heating the substrate to 550 ° C. in a nitrogen atmosphere.

  Next, as illustrated in FIG. 15A, a first interlayer insulating film 1222 that covers the gate insulating film 1208 and the gate electrode 1209 is formed. As the first interlayer insulating film 1222, an inorganic insulating film containing hydrogen, for example, a silicon nitride film is used.

  Thereafter, heat treatment is performed and hydrogenation is performed. A dangling bond of the silicon oxide film or the silicon film is terminated by hydrogen released from the silicon nitride film which is the first interlayer insulating film 1222.

  Next, as shown in FIG. 15A, a second interlayer insulating film 1223 is formed so as to cover the first interlayer insulating film 1222. The second interlayer insulating film 1223 includes an inorganic material (silicon oxide, silicon nitride, silicon nitride containing oxygen, etc.), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene). ), A skeleton structure composed of a bond of silicon (Si) and oxygen (O), a material having a structure in which at least one of fluorine, aliphatic hydrocarbons, or aromatic hydrocarbons is bonded to silicon, so-called siloxane, And a stacked structure thereof can be used.

  Next, openings, so-called contact holes, are formed in the gate insulating film 1208, the first insulating film 1222, and the second insulating film 1223. Then, wirings 1225a to 1225e connected to the impurity regions are formed as shown in FIG. Further, if necessary, a wiring connected to the gate electrode is formed at the same time. Note that these wirings may be formed using a film made of an element of aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), or silicon (Si), or an alloy film using these elements. In addition, these wirings may be formed of an aluminum alloy film containing at least one element selected from nickel, cobalt, and iron, and carbon.

  As described above, an n-channel thin film transistor having an LDD structure formed so as to have a low-concentration impurity region and a gate length of 1.0 μm or less can be formed. Further, a p-channel thin film transistor having a so-called single drain structure formed so as not to have a low concentration impurity region and having a gate length of 1.0 μm or less is completed. A TFT having a gate length of 1.0 μm or less can be expressed as a submicron TFT. A p-channel thin film transistor can hardly have deterioration due to hot carriers and a short channel effect, and thus can have a single-drain structure.

  Note that in the present invention, a p-channel thin film transistor may have an LDD structure. Further, an n-channel thin film transistor and a p-channel thin film transistor may have a so-called GOLD structure in which a low-concentration impurity region overlaps with a gate electrode instead of the LDD structure.

  A semiconductor device having a thin film transistor formed as described above, a CPU in this embodiment, can be manufactured, and a driving voltage of 5 V enables an operation frequency of 30 MHz.

  Next, an example in which various circuits are formed using the above-described thin film transistor as appropriate is described with reference to FIG. 16. FIG. 16 is a block diagram of a CPU formed over a glass substrate 1600.

  16 includes an arithmetic circuit (ALU) 1601, an arithmetic circuit control unit (ALU Controller) 1602, an instruction analysis unit (Instruction Decoder) 1603, and an interrupt control unit (Interrupt Controller). ) 1604, timing controller 1605, register 1606, register controller 1607, bus interface 1608, rewritable ROM 1609, ROM interface (ROM I / F) 1620 mainly. The ROM 1609 and the ROM I / F 1620 may be provided in separate chips.

  Needless to say, the CPU illustrated in FIG. 16 is just an example in which the configuration is simplified, and an actual CPU may have various configurations depending on the application.

  The instruction input to the CPU via the bus interface 1608 is input to the instruction analysis unit 1603 and decoded, and then is input to the control unit 1602 for the arithmetic circuit, the interrupt control unit 1604, the register control unit 1607, and the timing control unit 1605. Entered.

  An arithmetic circuit control unit 1602, an interrupt control unit 1604, a register control unit 1607, and a timing control unit 1605 perform various controls based on the decoded instruction. Specifically, the arithmetic circuit control unit 1602 generates a signal for controlling the operation of the arithmetic circuit 1601. The interrupt control unit 1604 determines and processes an interrupt request from an external input / output device or a peripheral circuit from the priority or mask state during execution of the CPU program. The register control unit 1607 generates an address of the register 1606, and reads and writes the register 1606 according to the state of the CPU.

  In addition, the timing control unit 1605 generates a signal for controlling the operation timing of the arithmetic circuit 1601, the arithmetic circuit control unit 1602, the instruction analysis unit 1603, the interrupt control unit 1604, and the register control unit 1607. For example, the timing control unit 1605 includes an internal clock generation unit that generates an internal clock signal CLK2 (1622) based on the reference clock signal CLK1 (1621), and supplies the clock signal CLK2 to the various circuits.

  According to the present invention, it is possible to satisfactorily irradiate a laser beam having a large area with one scanning. In addition, the CPU can be manufactured with low cost and good quality.

  Note that this embodiment can be freely combined with the embodiment mode and other embodiments.

  Here, as an example of a semiconductor device manufactured using the present invention, a thin film integrated circuit or a non-contact thin film integrated circuit device (a wireless IC tag, also referred to as RFID (radio frequency identification)) is manufactured. The process will be described with reference to FIGS.

  An example in which an insulated TFT is used as a semiconductor element used in an integrated circuit of a wireless IC tag is shown below. However, a semiconductor element used in an integrated circuit of a wireless IC tag is not limited to a TFT, and any element can be used. Can be used. For example, in addition to the TFT, a memory element, a diode, a photoelectric conversion element, a resistance element, a coil, a capacitor element, an inductor, and the like can be typically given.

  First, as illustrated in FIG. 17A, a separation layer 1701 is formed over a glass substrate (first substrate) 1700 by a sputtering method. The separation layer 1701 can be formed by a sputtering method, a low pressure CVD method, a plasma CVD method, or the like. In this embodiment, amorphous silicon having a thickness of about 50 nm is formed by a low pressure CVD method and used as the peeling layer 1701. The thickness of the release layer 1701 is desirably 50 to 60 nm.

  The separation layer 1701 is not limited to silicon and may be formed using a material that can be selectively removed by etching. For example, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru) ), Rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), etc., and a layer containing an alloy or compound containing the above elements as a main component is formed as a single layer or multiple layers To do. Among these, tungsten can be etched with a gas containing halogen fluoride (for example, chlorine trifluoride). Moreover, tungsten oxide is formed by irradiating tungsten with light to oxidize the surface. This tungsten oxide is easier to etch than tungsten. Moreover, it can also peel, after changing the adhesiveness of the upper and lower thin films by light irradiation.

  Next, a base insulating film 1702 is formed over the separation layer 1701. The base insulating film 1702 is provided to prevent an alkali metal such as Na or an alkaline earth metal contained in the first substrate from diffusing into the semiconductor film and adversely affecting the characteristics of a semiconductor element such as a TFT. The base insulating film 1702 also has a role of protecting the semiconductor element in a process of peeling the semiconductor element later. The base insulating film 1702 may be a single layer or a stack of a plurality of insulating films. Therefore, an insulating film such as silicon oxide, silicon nitride, silicon oxide containing nitrogen (SiON), or silicon nitride containing oxygen (SiNO) that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film is used. Form.

  Next, a semiconductor film 1703 is formed over the base insulating film 1702. The semiconductor film 1703 is preferably formed without being exposed to the air after the base film 1702 is formed. The thickness of the semiconductor film 1703 is 20 to 200 nm (desirably 40 to 170 nm, more desirably 50 to 150 nm).

  Then, similarly to the embodiment mode and other examples, the semiconductor film 1703 is irradiated with a laser beam to crystallize the semiconductor film 1703. By irradiation of the semiconductor film 1703 with a laser beam, a crystalline semiconductor film 1704 is formed. Note that FIG. 17A is a cross-sectional view illustrating the middle of scanning with a laser beam.

  Next, as illustrated in FIG. 17B, the semiconductor film 1707 having a crystal structure is shaped into an arbitrary shape to form island-shaped semiconductor layers 1705 to 1707, and then a gate insulating film 1708 is formed. The gate insulating film 1708 is formed using a single layer or a stacked layer of silicon nitride, silicon oxide, silicon oxide containing nitrogen, or silicon nitride containing oxygen using a plasma CVD method, a sputtering method, or the like. it can.

  Note that after the gate insulating film 1708 is formed, heat treatment is performed at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3% or more of hydrogen to hydrogenate the island-shaped semiconductor layers 1705 to 1707. You can go. Further, plasma hydrogenation (using hydrogen excited by plasma) may be performed as another means of hydrogenation.

  Next, as shown in FIG. 17C, gate electrodes 1709 to 1711 are formed. Here, after forming Si and W so as to be stacked by a sputtering method, gate electrodes 1709 to 1711 are formed by performing etching using the resist 1712 as a mask. Needless to say, the conductive material, structure, and manufacturing method of the gate electrodes 1709 to 1711 are not limited to these, and can be selected as appropriate. For example, a stacked structure of Si and NiSi (nickel silicide) doped with an n-type impurity or a stacked structure of TaN (tantalum nitride) and W (tungsten) may be used. Alternatively, a single layer may be formed using various conductive materials. In the case where the gate electrode and the antenna are formed at the same time, materials may be selected in consideration of their functions.

Further, instead of a resist mask, a mask such as SiO _x may be used. In this case, a process for forming a mask (called a hard mask) of SiO _x , SiON, etc. by shaping the material into an arbitrary shape is added, but since the film thickness of the mask during etching is less than that of the resist, the desired process Gate electrodes 1709 to 1711 having a width can be formed. Alternatively, the gate electrodes 1709 to 1711 may be selectively formed by a droplet discharge method without using the resist 1712.

  Next, as illustrated in FIG. 15D, an island-shaped semiconductor film 1706 to be a p-channel TFT is covered with a resist 1713, and the gate electrodes 1709 and 1711 are used as masks to form island-shaped semiconductor layers 1705 and 1707, An impurity element imparting a mold (typically, P (phosphorus) or As (arsenic)) is doped at a low concentration. By this doping step, doping is performed through the gate insulating film 1708, and a pair of low-concentration impurity regions 1716 and 1717 are formed in the island-shaped semiconductor layers 1705 and 1707. Note that this doping step may be performed without covering the island-shaped semiconductor film 1706 to be a p-channel TFT with a resist.

  Next, as shown in FIG. 17E, after the resist 1713 is removed by ashing or the like, a resist 1718 is newly formed so as to cover the island-shaped semiconductor layers 1705 and 1707 to be n-channel TFTs. With the electrode 1710 as a mask, the island-shaped semiconductor layer 1706 is doped with an impurity element imparting p-type conductivity (typically B (boron)) at a high concentration. By this doping step, doping is performed through the gate insulating film 1708, and a pair of P-type high concentration impurity regions 1720 are formed in the island-shaped semiconductor layer 1706.

  Next, as illustrated in FIG. 18A, after the resist 1718 is removed by ashing or the like, an insulating film 1721 is formed so as to cover the gate insulating film 1708 and the gate electrodes 1709 to 1711.

After that, the insulating film 1721 and the gate insulating film 1708 are partially etched by an etch back method, and the side walls 1722 to 1724 in contact with the side walls of the gate electrodes 1709 to 1712 are self-aligned as shown in FIG. (Self-aligned). As an etching gas, a mixed gas of CHF ₃ and He was used. Note that the step of forming the sidewall is not limited to these.

  Next, as shown in FIG. 18C, a resist 1726 is newly formed so as to cover the island-shaped semiconductor layer 1707 to be a p-channel TFT, and the gate electrodes 1709 and 1711 and the sidewalls 1722 and 1724 are masked. As described above, an impurity element imparting n-type (typically P or As) is doped at a high concentration. In this doping step, doping is performed through the gate insulating film 1708, and a pair of n-type high concentration impurity regions 1727 and 1728 are formed in the island-shaped semiconductor layers 1705 and 1707.

Next, after removing the resist 1726 by ashing or the like, the impurity region may be thermally activated. For example, after a 50 nm SiON film is formed, heat treatment may be performed in a nitrogen atmosphere at 550 ° C. for 4 hours. In addition, after forming a SiN _x film containing hydrogen to a thickness of 100 nm, defects in the polycrystalline semiconductor film can be improved by performing heat treatment at 410 ° C. for 1 hour in a nitrogen atmosphere. This terminates dangling bonds existing in the polycrystalline semiconductor film, for example, and is called a hydrogenation process.

  Through the series of steps described above, an n-channel TFT 1730, a p-channel TFT 1731, and an n-channel TFT 1732 are formed. In the manufacturing process, a TFT having a channel length of 0.2 μm to 2 μm can be formed by appropriately changing the conditions of the etch back method and adjusting the size of the sidewall.

  Further, after that, a passivation film for protecting the TFTs 1730 to 1732 may be formed.

  Next, as illustrated in FIG. 19A, a first interlayer insulating film 1733 is formed so as to cover the TFTs 1730 to 1732.

  Further, a second interlayer insulating film 1734 is formed over the first interlayer insulating film 1733. Note that the first interlayer insulating film 1733 or the second interlayer insulating film 1734 and the first interlayer insulating film 1733 or 2 due to stress generated from a difference in thermal expansion coefficient between a conductive material or the like that forms a wiring to be formed later In order to prevent the second interlayer insulating film 1734 from peeling or cracking, a filler may be mixed in the first interlayer insulating film 1733 or the second interlayer insulating film 1734.

  Next, as shown in FIG. 19A, contact holes are formed in the first interlayer insulating film 1733, the second interlayer insulating film 1734, and the gate insulating film 1708, and wirings 1735 to 1739 connected to the TFTs 1730 to 1732 are formed. Form. Note that the wirings 1735 and 1736 are in the high-concentration impurity region 1727 of the n-channel TFT 1730, the wirings 1736 and 1737 are in the high-concentration impurity region 1720 of the p-channel TFT 1731, and the wirings 1738 and 1739 are high-concentration impurity regions of the n-channel TFT 1732. 1728, respectively. Further, the wiring 1739 is also connected to the gate electrode 1711 of the n-channel TFT 1732. The n-channel TFT 1732 can be used as a memory element of a random number ROM.

  Next, as illustrated in FIG. 19B, a third interlayer insulating film 1741 is formed over the second interlayer insulating film 1734 so as to cover the wirings 1735 to 1739. The third interlayer insulating film 1741 is formed to have an opening at a position where the wiring 1735 is partially exposed. Note that the third interlayer insulating film 1741 can be formed using a material similar to that of the first interlayer insulating film 1733.

  Next, an antenna 1742 is formed over the third interlayer insulating film 1741. The antenna 1742 is formed using a conductive material including one or more metals such as Ag, Au, Cu, Pd, Cr, Mo, Ti, Ta, W, Al, Fe, Co, Zn, Sn, and Ni, and a metal compound. Can do. The antenna 1742 is connected to the wiring 1735. Note that in FIG. 19B, the antenna 1742 is directly connected to the wiring 1735; however, the wireless IC tag of the present invention is not limited to this structure. For example, the antenna 1742 and the wiring 1735 may be electrically connected using a separately formed wiring.

  The antenna 1742 can be formed by a printing method, a photolithography method, an evaporation method, a droplet discharge method, or the like. In FIG. 19B, the antenna 1742 is formed using a single-layer conductive film; however, the antenna 1742 can be formed by stacking a plurality of conductive films. For example, the antenna 1742 may be formed by coating a wiring formed of Ni or the like with electroless plating.

  The droplet discharge method means a method of forming a predetermined pattern by discharging droplets containing a predetermined composition from the pores, and includes an ink jet method and the like in its category. The printing method includes a screen printing method and an offset printing method. By using a printing method or a droplet discharge method, the antenna 1742 can be formed without using an exposure mask. In addition, unlike the photolithography method, there is no waste of material that is removed by etching in the droplet discharge method and the printing method. Further, since it is not necessary to use an expensive mask for exposure, the cost for manufacturing a wireless IC tag can be suppressed.

In the case of using a droplet discharge method or various printing methods, for example, conductive particles in which Cu is coated with Ag can be used. Note that in the case where the antenna 1742 is formed by a droplet discharge method, it is preferable to perform treatment on the surface of the third interlayer insulating film 1741 so as to increase the adhesion of the antenna 1742.

  As a method for improving the adhesion, specifically, for example, a method of attaching a metal or a metal compound capable of improving the adhesion of the conductive film or the insulating film to the surface of the third interlayer insulating film 1741 by catalytic action. An organic insulating film having high adhesion to the conductive film or insulating film to be formed, a method of attaching a metal or a metal compound to the surface of the third interlayer insulating film 1741, and a surface of the third interlayer insulating film 1741 Examples include a method of performing surface modification by performing plasma treatment under atmospheric pressure or reduced pressure.

  When the metal or metal compound attached to the third interlayer insulating film 1741 has conductivity, the sheet resistance is controlled so that the normal operation of the antenna is not hindered. Specifically, the average thickness of the conductive metal or metal compound is controlled to be, for example, 1 to 10 nm, or these metals or metal compounds are partially or entirely insulated by oxidation. Or just make it. Alternatively, the deposited metal or metal compound may be selectively removed by etching except for the region where the adhesion is desired to be improved. Alternatively, the metal or the metal compound may be selectively attached only to a specific region by using a droplet discharge method, a printing method, a sol-gel method, or the like, instead of attaching the metal or the metal compound to the entire surface of the substrate in advance. Note that the metal or metal compound does not need to be a completely continuous film on the surface of the third interlayer insulating film 1741, and may be dispersed to some extent.

  Then, as shown in FIG. 20A, after the antenna 1742 is formed, a protective layer 1745 is formed over the third interlayer insulating film 1741 so as to cover the antenna 1742. The protective layer 1745 is formed using a material that can protect the antenna 1742 when the peeling layer 1701 is removed later by etching. For example, the protective layer 1745 can be formed by applying an epoxy resin, an acrylate resin, or a silicon resin soluble in water or alcohols to the entire surface.

  Next, as shown in FIG. 20B, a groove 1746 is formed in order to separate the wireless IC tag individually. The groove 1746 may be deep enough to expose the release layer 1701. The groove 1746 can be formed by dicing, scribing, or the like. Note that in the case where it is not necessary to separate the wireless IC tag formed over the first substrate 1700, the groove 1746 is not necessarily formed.

Next, as illustrated in FIG. 20C, the peeling layer 1701 is removed by etching. Here, halogen fluoride is used as an etching gas, and this gas is introduced from the groove 1746. For example, ClF ₃ (chlorine trifluoride) is used, the temperature is 350 ° C., the flow rate is 300 sccm, the atmospheric pressure is 798 Pascal (798 Pa), and the treatment time is 3 hours. Further, a gas in which nitrogen is mixed with ClF ₃ gas may be used. By using halogen fluoride such as ClF ₃ , the separation layer 1701 is selectively etched, and the first substrate 1700 can be separated from the TFTs 1730 to 1732. The halogen fluoride may be either a gas or a liquid.

  Next, as illustrated in FIG. 21A, the peeled TFTs 1730 to 1732 and the antenna 1742 are attached to the second substrate 1751 with an adhesive 1750. As the adhesive 1750, a material capable of bonding the second substrate 1751 and the base film 1702 is used. As the adhesive 1750, for example, various curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive can be used.

  Note that the second substrate 1751 can be formed using an organic material such as flexible paper or plastic.

  Next, as illustrated in FIG. 21B, after the protective layer 1745 is removed, an adhesive 1752 is applied over the third interlayer insulating film 1741 so as to cover the antenna 1742, and a cover material 1753 is attached. The cover material 1753 can be formed using a flexible organic material such as paper or plastic, like the second substrate 1751. The thickness of the adhesive 1752 may be, for example, 10 to 200 μm.

  The adhesive 1752 is formed using a material that can bond the cover material 1753 to the third interlayer insulating film 1741 and the antenna 1742. As the adhesive 1752, for example, various curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive can be used.

  The wireless IC tag is completed through the above-described steps. By the above manufacturing method, an extremely thin integrated circuit with a total film thickness of 0.3 μm to 3 μm, typically about 2 μm, can be formed between the second substrate 1751 and the cover material 1753.

Note that the thickness of the integrated circuit includes not only the thickness of the semiconductor element itself but also the thicknesses of various insulating films and interlayer insulating films formed between the adhesive 1750 and the adhesive 1752. Further, the area occupied by the integrated circuit in the wireless IC tag, 5 mm square (25 mm ²⁾ or less, and more preferably may be 0.3mm square (0.09 mm ²⁾ to 4 mm square (16 mm ²⁾ degree.

  Note that in this embodiment, a method for separating the substrate and the integrated circuit by providing a separation layer between the first substrate 1700 having high heat resistance and the integrated circuit and removing the separation layer by etching is described. The manufacturing method of the wireless IC tag of the present invention is not limited to this configuration. For example, a metal oxide film may be provided between a substrate having high heat resistance and the integrated circuit, and the integrated circuit may be peeled by weakening the metal oxide film by crystallization. Alternatively, a release layer using an amorphous semiconductor film containing hydrogen is provided between the substrate with high heat resistance and the integrated circuit, and the substrate and the integrated circuit are separated by removing the release layer by laser beam irradiation. You may do it. Alternatively, the integrated circuit may be separated from the substrate by mechanically removing the highly heat-resistant substrate on which the integrated circuit is formed or removing the substrate by etching with a solution or gas.

  Note that although an example in which the antenna is formed over the same substrate as the integrated circuit is described in this embodiment, the present invention is not limited to this structure. An antenna formed over another substrate and the integrated circuit may be bonded later to be electrically connected.

  Note that the frequency of radio waves generally used in RFID (radio frequency identification) is 13.56 MHz and 2.45 GHz, and a wireless IC tag is formed so that radio waves of these frequencies can be detected. This is very important for improving versatility.

  The wireless IC tag of this embodiment has an advantage that radio waves are less likely to be shielded than an RFID formed using a semiconductor substrate, and the signal can be prevented from being attenuated by shielding the radio waves. Accordingly, since a semiconductor substrate is not necessary, the cost of the wireless IC tag can be significantly reduced.

  Note that in this embodiment, the example in which the integrated circuit is separated and attached to a flexible substrate is described; however, the present invention is not limited to this structure. For example, in the case where a substrate having a heat resistant temperature that can withstand heat treatment in a manufacturing process of an integrated circuit, such as a glass substrate, is used, the integrated circuit is not necessarily peeled off.

  In addition, this embodiment can be freely combined with the embodiment mode and other embodiments.

  Various electronic devices can be completed using a semiconductor material which is irradiated with a laser beam according to the present invention. For example, a digital video camera, a digital camera, a goggle type display (head mounted display), a navigation system, an audio playback device (audio), a television (display), a portable terminal, and the like can be given. By using the present invention, the entire surface of the substrate can be satisfactorily annealed, so that the degree of freedom in layout and size of the semiconductor element can be increased and the degree of integration can be improved. Further, since the crystallinity is the same in any part of the substrate, the product quality of the manufactured semiconductor element is in a good state, and it becomes possible to eliminate variations in the product quality. As a result, an electronic device as a final product can be manufactured with good quality and high throughput. A specific example will be described with reference to the drawings.

  FIG. 22A illustrates a display device, which includes a housing 2201, a support base 2202, a display portion 2203, a speaker portion 2204, a video input terminal 2205, and the like. This display device is manufactured by using a thin film transistor formed by a manufacturing method shown in another embodiment for the display portion 2203. By using a semiconductor material that has been subjected to laser irradiation using the present invention, it is possible to increase the area of the large grain size region and reduce the area of the poorly crystalline region without causing laser interference fringes in the semiconductor film. It becomes. Further, by annealing using a longer linear beam using the present invention, a larger display device can be manufactured. The display device includes a liquid crystal display device, a light emitting device, and the like, and specifically includes all information display devices such as a computer, a television receiver, and an advertisement display.

  FIG. 22B illustrates a computer which includes a housing 2211, a display portion 2212, a keyboard 2213, an external connection port 2214, a pointing mouse 2215, and the like. When the semiconductor material subjected to laser irradiation of the present invention is used, the quality of the display portion 2212 and other circuits of the manufactured computer is good and quality variations can be eliminated. Furthermore, the present invention can also be applied to semiconductor devices such as a CPU and a memory inside the main body.

  FIG. 22C illustrates a mobile phone, which is a typical example of a mobile terminal. This mobile phone includes a housing 2221, a display portion 2222, operation keys 2223, and the like. When the semiconductor material subjected to laser irradiation of the present invention is used for electronic devices such as PDAs (Personal Digital Assistants), digital cameras, and small game machines, including the above mobile phone, the display portion 2222 and the CPU The quality of the functional circuit such as a memory is good, and variations in quality can be eliminated.

  22D and 22E are digital cameras. Note that FIG. 22E is a diagram illustrating the back side of FIG. This digital camera includes a housing 2231, a display portion 2232, a lens 2233, operation keys 2234, a shutter 2235, and the like. When the semiconductor material subjected to laser irradiation of the present invention is used, the quality of the display portion 2233, the driver portion that controls the display portion 2233, and other circuits is good, and variations in quality can be eliminated.

  FIG. 22F illustrates a digital video camera. This digital video camera includes a main body 2241, a display portion 2242, a housing 2243, an external connection port 2244, a remote control receiving portion 2245, an image receiving portion 2246, a battery 2247, an audio input portion 2248, operation keys 2249, an eyepiece portion 2250, and the like. . When the semiconductor material subjected to laser irradiation of the present invention is used, the quality of the display portion 2242, the driver portion that controls the display portion 2242, and other circuits is good, and variations in quality can be eliminated.

  In addition, a thin film transistor manufactured using the laser processing apparatus of the present invention can be used as a thin film integrated circuit or a non-contact thin film integrated circuit device (a wireless IC tag or RFID (also referred to as radio frequency identification (RFID)). By using the manufacturing method described in another embodiment, the thin film integrated circuit and the non-contact thin film integrated circuit can be used as a tag or a memory.

  FIG. 23A illustrates a state where the wireless IC tag 2302 is attached to the passport 2301. Further, the wireless IC tag 2302 may be embedded in the passport 2301. Similarly, a wireless IC tag is pasted or embedded in a driver's license, credit card, banknote, coin, securities, gift certificate, ticket, traveler's check (T / C), health insurance card, resident's card, family register copy, etc. be able to. In this case, only information indicating authenticity is input to the wireless IC tag, and an access right is set so that information cannot be read or written illegally. This can be realized by using the memory shown in the other embodiments. By using it as a tag in this way, it becomes possible to distinguish it from a forged one.

  In addition, a wireless IC tag can be used as a memory. FIG. 23B illustrates an example in which the wireless IC tag 2311 is embedded in a label to be attached to a vegetable package. Further, a wireless IC tag may be attached or embedded in the package itself. The wireless IC tag 2311 includes a production stage process such as production place, producer, date of manufacture, processing method, product distribution process, price, quantity, usage, shape, weight, expiration date, various authentication information, etc. Can be recorded. Information from the wireless IC tag 2311 is received and read by the antenna unit 2313 of the wireless reader 2312 and displayed on the display unit 2314 of the reader 2312 so that the wholesaler, retailer, and consumer can easily grasp the information. become. In addition, by setting access rights for each of producers, traders, and consumers, a system is incapable of reading, writing, rewriting, and erasing without access rights.

  The wireless IC tag can be used as follows. At the time of accounting, the fact that accounting has been completed is entered in the wireless IC tag, and a check means is provided at the exit to check whether accounting has been written on the wireless IC tag. If you try to leave the store without checking out, an alarm will sound. This method can prevent forgetting to pay and shoplifting.

  Furthermore, in consideration of customer privacy protection, the following method can be used. At the stage of accounting at the cash register, (1) lock the data input to the wireless IC tag with a password, (2) encrypt the data itself input to the wireless IC tag, (3) wireless Either the data input to the IC tag is deleted, or (4) the data input to the wireless IC tag is destroyed. These can be realized by using the memories mentioned in the other embodiments. Then, by providing a check means at the exit, it is checked whether any of the processes (1) to (4) has been performed, or whether the wireless IC tag data has not been processed. Check for accounting. In this way, it is possible to check whether or not there is a transaction in the store, and it is possible to prevent information on the wireless IC tag from being read outside the store against the will of the owner.

  Note that there are several methods for destroying the data input to the wireless IC tag (4). For example, (a) a method of writing only “0 (off)” or “1 (on)” or both “0” and “1” into at least a part of electronic data of the wireless IC tag and destroying only the data Alternatively, (b) a method in which a current is excessively supplied to the wireless IC tag and a part of wiring of a semiconductor element included in the wireless IC tag is physically destroyed can be used.

  Since the wireless tag mentioned above is higher in manufacturing cost than a conventionally used barcode, it is necessary to reduce the cost. By using the present invention, a semiconductor element having good quality and no variation can be formed with high throughput, which is effective for cost reduction. Further, any wireless tag can be manufactured with high quality and no performance variation.

  As described above, the applicable range of the semiconductor device manufactured according to the present invention is so wide that the semiconductor device manufactured according to the present invention can be used for electronic devices in various fields.

  In this embodiment, another configuration example of the laser irradiation apparatus used in the present invention will be described with reference to FIGS. In this example, a slit is provided in addition to the configuration used in the embodiment of the present invention. This slit blocks the end of the laser beam, and the projection lens projects an image formed by the slit onto the irradiation surface. Similarly, a slit and a projection lens can be combined with the configuration of the first embodiment.

  In this embodiment, a laser beam emitted from a laser oscillator 2501 that oscillates at multiple wavelengths and oscillates a mode-locked pulse having a repetition frequency of 10 MHz or more is shaped into a linear beam by an optical system, and a semiconductor film 2508 is formed. The irradiated substrate 2509 is irradiated.

  First, attention is paid to the top view of FIG. In this embodiment, a laser oscillator using a Ti: sapphire crystal as a laser crystal is used as the laser oscillator 2501. The center wavelength of the fundamental wave oscillated here is 800 nm, and the full width at half maximum of the oscillation wavelength is 30 nm. This fundamental wave is converted into a second harmonic wave having a center wavelength of 400 nm and a full width at half maximum of the oscillation wavelength of 15 nm by a non-linear optical crystal in the laser oscillator 2501 and emits it.

  A laser that oscillates a laser beam with a wide range of wavelengths with respect to the excitation light source is not limited to the laser mentioned here. For example, a laser oscillator using a laser crystal in which a plurality of types of dopants such as Nd and Yb are added to ceramic YAG can be used.

  Next, the emitted laser beam is incident on the cylindrical lens array 2502. The cylindrical lens array 2502 divides one laser beam into a plurality of laser beams in the X-axis direction and superimposes the plurality of laser beams to make the intensity of the laser beam uniform. In the present embodiment, the X-axis direction indicates the long-axis direction of the laser beam.

  In this embodiment, the laser beam is divided into three, and these are combined into one laser beam. However, as can be seen from the above-described equation (1), the interval between the interference fringes for each wavelength is different. By using a simple laser beam, it is possible to cancel the difference in intensity of light generated by interference. Thereby, since the influence of interference can be reduced, the intensity distribution of the laser beam in the length direction of the linear beam can be made uniform, and the poor crystallinity region can be reduced.

  Next, the light is condensed in the Z-axis direction by a cylindrical lens 2504 that acts only in the X-axis direction, and is incident on a slit 2505 that blocks the end of the laser beam in the X-axis direction.

  The slit 2505 can block a portion where the intensity of the laser beam is low, but diffracted light is generated at the same time. When the semiconductor film 2508 is irradiated with this diffracted light, interference fringes are generated in the semiconductor film 2508, and it becomes difficult to uniformly crystallize the entire surface of the semiconductor film 2508. Therefore, a projection lens 2506 is provided so that the slit 2505 and the semiconductor film 2508 have a conjugate relationship, and an image of the slit 2505 is projected onto the semiconductor film 2508. In this embodiment, a convex cylindrical lens is used as the projection lens 2506.

  Next, attention is focused on the side view of FIG. The laser beam emitted from the laser oscillator 2501 is sequentially incident on the cylindrical lens array 2502 and the cylindrical lens 2504. However, since the cylindrical lens array 2502 and the cylindrical lens 2504 do not act in the X-axis direction of the laser beam, they pass through as they are. Subsequently, the light enters the projection lens 2506, but the projection lens 2506 does not act in the X-axis direction of the laser beam, and thus passes through as it is. The laser beam that has passed through the projection lens 2506 is condensed in the Z-axis direction by the cylindrical lens 2507 and irradiated onto the semiconductor film 2508. In the present embodiment, the Z-axis direction indicates the short axis direction of the laser beam.

  In practice, as shown in FIG. 25, the laser beam that has passed through the cylindrical lens array 2502 is deflected by a mirror and applied to the semiconductor film 2508. The positions and the number of the mirrors 2503 are not limited to the positions and the numbers shown in FIG. 25, and can be appropriately provided as necessary.

  A substrate 2509 on which a semiconductor film 2508 is formed is made of glass, and is fixed to an adsorption stage so as not to drop during laser irradiation. The adsorption stage uses the X stage 2510 and the Y stage 2511 to repeat scanning in the X direction and the Y direction on the surface parallel to the surface of the semiconductor film 2508, respectively, and crystallize the semiconductor film 2508. The X stage 2510 and the Y stage 2511 can move at a speed of 100 to 1000 mm / sec. When the semiconductor film 2508 is irradiated with a laser beam, the X stage 2510 or the Y stage 2511 is preferably scanned at a constant speed in the minor axis direction of the laser beam. Especially preferably, it is 300-500 mm / sec.

  In this embodiment, the substrate 2509 on which the semiconductor film 2508 is formed is moved by using the X stage 2510 and the Y stage 2511. However, the laser beam scanning is performed by fixing the substrate 2509 to be processed. An irradiation system moving type that moves the irradiation position of the laser beam, an object moving type that moves the substrate while fixing the irradiation position of the laser beam, or a method that combines the above two methods can be used.

  Crystal grains grown in the laser beam scanning direction are formed in the laser beam irradiation region. Therefore, this irradiated region is very excellent in crystallinity. By using this irradiation region as a TFT channel formation region, extremely high mobility and on-current can be expected.

  A semiconductor device can be manufactured by manufacturing TFTs on a semiconductor film laser-crystallized by such a method by a method as shown in another embodiment and integrating the TFTs.

  Note that this embodiment can be freely combined with other embodiments.

FIG. 1 is a graph showing the relationship between the wavelength and the interval between interference fringes. FIG. 2 is a diagram showing an outline of the laser irradiation apparatus of the present invention. FIG. 3 is a top view and a side view of an optical system used in the laser irradiation apparatus of the present invention. FIG. 4 is a diagram for explaining the outline of the present invention. FIG. 5 is a diagram showing an example of the laser irradiation apparatus of the present invention. FIG. 6 is a diagram showing an example of an optical system used in the laser irradiation apparatus of the present invention. FIG. 7 is a diagram showing an outline of a TFT manufacturing process using laser irradiation according to the present invention. FIG. 8 is a diagram showing an outline of crystallization of a semiconductor film using laser irradiation according to the present invention. FIG. 9 is a diagram showing an outline of crystallization of a semiconductor film using laser irradiation according to the present invention. FIG. 10 is a diagram showing an outline of a manufacturing process of a display device using laser irradiation according to the present invention. FIG. 11 is a diagram showing an outline of a manufacturing process of a display device using laser irradiation according to the present invention. FIG. 12 is a diagram showing an outline of a manufacturing process of a CPU using laser irradiation according to the present invention. FIG. 13 is a diagram showing an outline of a manufacturing process of a CPU using laser irradiation according to the present invention. FIG. 14 is a diagram showing an outline of a manufacturing process of a CPU using laser irradiation according to the present invention. FIG. 15 is a diagram showing an outline of a manufacturing process of a CPU using laser irradiation according to the present invention. FIG. 16 is a diagram showing an outline of a manufacturing process of a CPU using laser irradiation according to the present invention. FIG. 17 is a diagram showing an outline of a manufacturing process of a wireless IC tag using laser irradiation according to the present invention. FIG. 18 is a diagram showing an outline of a manufacturing process of a wireless IC tag using laser irradiation according to the present invention. FIG. 19 is a diagram showing an outline of a manufacturing process of a wireless IC tag using laser irradiation according to the present invention. FIG. 20 is a diagram showing an outline of a manufacturing process of a wireless IC tag using laser irradiation according to the present invention. FIG. 21 is a diagram showing an outline of a manufacturing process of a wireless IC tag using laser irradiation according to the present invention. FIG. 22 is a diagram showing an outline of an electronic apparatus using laser irradiation according to the present invention. FIG. 23 is a diagram showing an outline of an electronic apparatus using laser irradiation according to the present invention. FIG. 24 is a diagram showing an energy density distribution of a laser beam. FIG. 25 is a diagram illustrating an example of a laser irradiation apparatus of the present invention. 26 is a top view and a side view of the laser irradiation apparatus described in FIG.

Explanation of symbols

2401 Area near the center (laser beam) 2402 Poor crystallinity area 201 Laser oscillator 202 Cylindrical lens array 203 Mirror 204 Semiconductor film 205 Cylindrical lens 206 Cylindrical lens 207 Adsorption stage 208 X stage 209 Y stage 501 Pulse laser oscillator 502 Cylindrical lens array 503 Cylindrical lens array 504 Cylindrical lens 505 Cylindrical lens array 505 Cylindrical lens array 506 Surface 507 Cylindrical lens 508 Cylindrical lens 509 Semiconductor film 510 511 Stage 700 Substrate 701 Underlayer film 702 Amorphous semiconductor film 703 Laser 704 Cylindrical lens 705 Crystalline semiconductor Film 706 island-shaped semiconductor film 707 Gate insulating film 708 Gate electrode 709 Source region 710 Drain region 711 LDD region 712 N-channel TFT
713 N-channel TFT
714 P-channel TFT
715 Insulating film 716 Insulating film 717 Wiring 718 Insulating film 800 Substrate 801 Underlying film 802 Semiconductor film 803 Semiconductor film 804 Laser 805 Semiconductor film 806 Oxide film 807 Gettering semiconductor film 808 Island-like semiconductor film 1001 Source signal line driver circuit 1002 Pixel portion 1003 Gate side driving circuit 1004 Sealing substrate 1005 First sealing material 1007 Second sealing material 1008 Connection wiring 1009 FPC
1010 Substrate 1011 Source side drive circuit 1012 Current control TFT
1013 First electrode 1014 Insulator 1015 Electroluminescent layer 1016 Second electrode 1017 Transparent protective layer 1018 Electroluminescent device 1023 n-channel TFT
1024 p-channel TFT
1031 Colored layer 1032 Light-shielding layer 1200 Substrate 1201 Base insulating film 1202 Amorphous semiconductor film 1203 Laser 1204 Semiconductor films 1206a to e having a crystal structure Semiconductor film 1208 Gate insulating films 1209a and b Conductive film 1210 Resist mask 1215 Resist masks 1216a to c Impurity region 1217 Resist mask 1218a, b Impurity region 1219a-c Sidewall 1220a-c High concentration impurity region 1221 Resist mask 1222 First interlayer insulating film 1223 Second interlayer insulating film 1225a-e Wiring 1600 Substrate 1601 Arithmetic circuit 1602 Arithmetic Circuit control unit 1603 Instruction analysis unit 1604 Interrupt control unit 1605 Timing control unit 1606 Register 1607 Register control unit 1608 Bus interface 1609 ROM
1620 ROM interface 1621 CLK1
1622 CLK2
1700 Glass substrate 1701 Peeling layer 1702 Base insulating film 1703 Semiconductor film 1704 Crystalline semiconductor films 1705 to 1707 Semiconductor layer 1708 Gate insulating films 1709 to 1711 Gate electrode 1712 Resist 1713 Resist 1716 Low concentration impurity region 1717 Low concentration impurity region 1718 Resist 1720 High Concentration impurity region 1721 Insulating films 1722 to 1724 Side wall 1726 Resist 1727 High concentration impurity region 1728 High concentration impurity region 1730 n-channel TFT
1731 p-channel TFT
1732 n-channel TFT
1733 First interlayer insulating film 1734 Second interlayer insulating film 1735 to 1739 Wiring 1741 Third interlayer insulating film 1742 Antenna 1745 Protective layer 1746 Groove 1750 Adhesive 1751 Second substrate 1752 Adhesive 1753 Cover material 2201 Housing 2202 Support base 2203 Display unit 2204 Speaker unit 2205 Video input terminal 2211 Case 2212 Display unit 2213 Keyboard 2214 External connection port 2215 Pointing mouse 2221 Case 2222 Display unit 2223 Operation key 2231 Case 2232 Display unit 2233 Lens 2234 Operation key 2235 Shutter 2241 Main body 2242 Display unit 2243 Case 2244 External connection port 2245 Remote control receiving unit 2246 Image receiving unit 2247 Battery 2248 Audio input unit 2249 Operation key 22 0 eyepiece 2301 passport 2302 wireless IC tag 2311 wireless IC tag 2312 reader 2313 antenna unit 2501 laser oscillator 2502 a cylindrical lens array 2503 mirrors 2504 a cylindrical lens 2505 slit 2506 projection lens 2507 a cylindrical lens 2508 semiconductor film 2509 substrate 2510 X stage 2511 Y stage

Claims (15)

A laser oscillator that oscillates a laser beam having a spectral width;
A beam homogenizer for uniformizing the intensity distribution of the laser beam emitted from the laser oscillator;
Means for moving the irradiation surface of the laser beam relative to the laser beam. A laser oscillator that oscillates a laser beam having a spectral width;
A beam homogenizer for uniformizing the intensity distribution of the laser beam emitted from the laser oscillator;
A condenser lens for condensing the laser beam that has passed through the beam homogenizer;
Means for moving the irradiation surface relative to the laser beam. A laser oscillator that oscillates a laser beam having a spectral width;
A beam homogenizer for uniformizing the intensity distribution of the laser beam emitted from the laser oscillator;
A slit for blocking an end of the laser beam whose intensity distribution is made uniform by the beam homogenizer;
A condensing lens for condensing the laser beam;
A projection lens that projects an image of a laser beam formed by the slit onto an irradiation surface;
Means for moving the irradiation surface relative to the laser beam. In claim 2 and claim 3,
The condensing lens may be a convex cylindrical lens or a convex spherical lens. In any one of Claims 1 thru | or 4,
The laser oscillator is a crystal of sapphire, YAG, ceramics YAG, ceramics Y ₂ O ₃ , KGW, KYW, Mg ₂ SiO ₄ , YLF, YVO ₄ , or GdVO ₄ , and Nd, Yb, Cr, Ti, Ho, A laser irradiation apparatus using a laser oscillator using a laser crystal to which at least one dopant of Er is added. In any one of Claims 1 thru | or 5,
The laser irradiation apparatus, wherein the laser beam is a harmonic converted by a nonlinear optical element. In any one of Claims 1 thru | or 6,
The laser irradiation apparatus, wherein the beam homogenizer is any one of a cylindrical lens array, a light pipe, and a fly-eye lens. A digital video camera, a digital camera, a navigation system, a sound reproducing device, a display, a portable terminal, a thin film integrated circuit device, or a CPU manufactured by the laser irradiation device according to claim 1. A first laser beam emitted from a laser oscillator that oscillates a laser beam having a spectral width is passed through a beam homogenizer to form a second laser beam having a uniform intensity distribution;
The second laser beam is incident on the irradiation surface;
A laser irradiation method, wherein the second laser beam is scanned relative to the irradiation surface. A first laser beam emitted from a laser oscillator that oscillates a laser beam having a spectral width is passed through a beam homogenizer to form a second laser beam having a uniform intensity distribution;
The second laser beam is converted into a third laser beam using a condenser lens,
The third laser beam is incident on the irradiation surface;
A laser irradiation method, wherein the third laser beam is scanned relative to the irradiation surface. A first laser beam emitted from a laser oscillator that oscillates a laser beam having a spectral width is passed through a beam homogenizer to form a second laser beam having a uniform intensity distribution;
The end of the second laser beam is blocked by a slit to form a third laser beam,
Passing the third laser beam through a condenser lens and a projection lens, and projecting an image of the third laser beam formed by the slit onto an irradiation surface;
A laser irradiation method, wherein the irradiation surface is scanned relative to the laser beam. In claims 9 to 11,
The condensing lens is a laser irradiation method using a convex cylindrical lens or a convex spherical lens. In any one of Claims 9-12,
As a laser having a wide oscillation wavelength range, a sapphire, YAG, ceramics YAG, ceramics Y ₂ O ₃ , KGW, KYW, Mg ₂ SiO ₄ , YLF, YVO ₄ , or GdVO ₄ crystal may be used with Nd, Yb, Cr, Ti A laser irradiation method using a laser oscillator to which at least one kind of dopant is added. In any one of claims 9 to 13,
A laser irradiation method, wherein the laser beam is converted by a nonlinear optical element. In any one of claims 9 to 14,
The beam homogenizer uses any one of a cylindrical lens array, a light pipe, and a fly-eye lens.

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