JP2006156969A - 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグおよび衣類 - Google Patents

半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグおよび衣類 Download PDF

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Publication number
JP2006156969A
JP2006156969A JP2005306607A JP2005306607A JP2006156969A JP 2006156969 A JP2006156969 A JP 2006156969A JP 2005306607 A JP2005306607 A JP 2005306607A JP 2005306607 A JP2005306607 A JP 2005306607A JP 2006156969 A JP2006156969 A JP 2006156969A
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JP
Japan
Prior art keywords
semiconductor device
organic
organic element
organic compound
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005306607A
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English (en)
Japanese (ja)
Other versions
JP2006156969A5 (enExample
Inventor
Jun Koyama
潤 小山
Hiroko Abe
寛子 安部
Mikio Yugawa
幹央 湯川
Yuji Iwaki
裕司 岩城
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005306607A priority Critical patent/JP2006156969A/ja
Publication of JP2006156969A publication Critical patent/JP2006156969A/ja
Publication of JP2006156969A5 publication Critical patent/JP2006156969A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/75—Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
JP2005306607A 2004-10-29 2005-10-21 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグおよび衣類 Withdrawn JP2006156969A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005306607A JP2006156969A (ja) 2004-10-29 2005-10-21 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグおよび衣類

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004317398 2004-10-29
JP2005306607A JP2006156969A (ja) 2004-10-29 2005-10-21 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグおよび衣類

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011115579A Division JP2011211215A (ja) 2004-10-29 2011-05-24 半導体装置

Publications (2)

Publication Number Publication Date
JP2006156969A true JP2006156969A (ja) 2006-06-15
JP2006156969A5 JP2006156969A5 (enExample) 2008-09-18

Family

ID=36634806

Family Applications (1)

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JP2005306607A Withdrawn JP2006156969A (ja) 2004-10-29 2005-10-21 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグおよび衣類

Country Status (1)

Country Link
JP (1) JP2006156969A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008046116A (ja) * 2006-07-20 2008-02-28 Semiconductor Energy Lab Co Ltd 位置情報検出システム及び位置情報検出方法
US8587479B2 (en) 2006-07-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Position information detection system and position information detection method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112060A (ja) * 1997-09-30 1999-04-23 Toshiba Corp 電子移動型素子
JP2000113152A (ja) * 1998-10-05 2000-04-21 Hitachi Maxell Ltd 非接触メモリ素子を内蔵した磁気ストライプテープ及びそれを利用して製造されたｉｃカード及びｉｃタグ
JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
JP2003529223A (ja) * 2000-03-28 2003-09-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ プログラム可能な記憶素子を有する集積回路
JP2004103212A (ja) * 2002-07-15 2004-04-02 Toshiba Corp 磁気ランダムアクセスメモリ
WO2004073079A1 (ja) * 2003-02-14 2004-08-26 Fuji Electric Holdings Co., Ltd. スイッチング素子
JP2004272975A (ja) * 2003-03-06 2004-09-30 Sharp Corp 不揮発性半導体記憶装置
JP2004273110A (ja) * 2003-03-10 2004-09-30 Sharp Corp 温度補償ｒｒａｍ回路

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112060A (ja) * 1997-09-30 1999-04-23 Toshiba Corp 電子移動型素子
JP2000113152A (ja) * 1998-10-05 2000-04-21 Hitachi Maxell Ltd 非接触メモリ素子を内蔵した磁気ストライプテープ及びそれを利用して製造されたｉｃカード及びｉｃタグ
JP2003529223A (ja) * 2000-03-28 2003-09-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ プログラム可能な記憶素子を有する集積回路
JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
JP2004103212A (ja) * 2002-07-15 2004-04-02 Toshiba Corp 磁気ランダムアクセスメモリ
WO2004073079A1 (ja) * 2003-02-14 2004-08-26 Fuji Electric Holdings Co., Ltd. スイッチング素子
JP2004272975A (ja) * 2003-03-06 2004-09-30 Sharp Corp 不揮発性半導体記憶装置
JP2004273110A (ja) * 2003-03-10 2004-09-30 Sharp Corp 温度補償ｒｒａｍ回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008046116A (ja) * 2006-07-20 2008-02-28 Semiconductor Energy Lab Co Ltd 位置情報検出システム及び位置情報検出方法
US8587479B2 (en) 2006-07-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Position information detection system and position information detection method

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