JP2006156969A - 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグおよび衣類 - Google Patents
半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグおよび衣類 Download PDFInfo
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- JP2006156969A JP2006156969A JP2005306607A JP2005306607A JP2006156969A JP 2006156969 A JP2006156969 A JP 2006156969A JP 2005306607 A JP2005306607 A JP 2005306607A JP 2005306607 A JP2005306607 A JP 2005306607A JP 2006156969 A JP2006156969 A JP 2006156969A
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Classifications
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- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/75—Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005306607A JP2006156969A (ja) | 2004-10-29 | 2005-10-21 | 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグおよび衣類 |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2004317398 | 2004-10-29 | ||
| JP2005306607A JP2006156969A (ja) | 2004-10-29 | 2005-10-21 | 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグおよび衣類 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2011115579A Division JP2011211215A (ja) | 2004-10-29 | 2011-05-24 | 半導体装置 |
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| Publication Number | Publication Date |
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| JP2006156969A true JP2006156969A (ja) | 2006-06-15 |
| JP2006156969A5 JP2006156969A5 (enExample) | 2008-09-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2005306607A Withdrawn JP2006156969A (ja) | 2004-10-29 | 2005-10-21 | 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄタグ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグおよび衣類 |
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| JP (1) | JP2006156969A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008046116A (ja) * | 2006-07-20 | 2008-02-28 | Semiconductor Energy Lab Co Ltd | 位置情報検出システム及び位置情報検出方法 |
| US8587479B2 (en) | 2006-07-20 | 2013-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Position information detection system and position information detection method |
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| JPH11112060A (ja) * | 1997-09-30 | 1999-04-23 | Toshiba Corp | 電子移動型素子 |
| JP2000113152A (ja) * | 1998-10-05 | 2000-04-21 | Hitachi Maxell Ltd | 非接触メモリ素子を内蔵した磁気ストライプテープ及びそれを利用して製造されたｉｃカード及びｉｃタグ |
| JP2002026283A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 多層構造のメモリ装置及びその製造方法 |
| JP2003243631A (ja) * | 2002-02-18 | 2003-08-29 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム |
| JP2003529223A (ja) * | 2000-03-28 | 2003-09-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | プログラム可能な記憶素子を有する集積回路 |
| JP2004103212A (ja) * | 2002-07-15 | 2004-04-02 | Toshiba Corp | 磁気ランダムアクセスメモリ |
| WO2004073079A1 (ja) * | 2003-02-14 | 2004-08-26 | Fuji Electric Holdings Co., Ltd. | スイッチング素子 |
| JP2004273110A (ja) * | 2003-03-10 | 2004-09-30 | Sharp Corp | 温度補償ｒｒａｍ回路 |
| JP2004272975A (ja) * | 2003-03-06 | 2004-09-30 | Sharp Corp | 不揮発性半導体記憶装置 |
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2005
- 2005-10-21 JP JP2005306607A patent/JP2006156969A/ja not_active Withdrawn
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11112060A (ja) * | 1997-09-30 | 1999-04-23 | Toshiba Corp | 電子移動型素子 |
| JP2000113152A (ja) * | 1998-10-05 | 2000-04-21 | Hitachi Maxell Ltd | 非接触メモリ素子を内蔵した磁気ストライプテープ及びそれを利用して製造されたｉｃカード及びｉｃタグ |
| JP2003529223A (ja) * | 2000-03-28 | 2003-09-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | プログラム可能な記憶素子を有する集積回路 |
| JP2002026283A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 多層構造のメモリ装置及びその製造方法 |
| JP2003243631A (ja) * | 2002-02-18 | 2003-08-29 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム |
| JP2004103212A (ja) * | 2002-07-15 | 2004-04-02 | Toshiba Corp | 磁気ランダムアクセスメモリ |
| WO2004073079A1 (ja) * | 2003-02-14 | 2004-08-26 | Fuji Electric Holdings Co., Ltd. | スイッチング素子 |
| JP2004272975A (ja) * | 2003-03-06 | 2004-09-30 | Sharp Corp | 不揮発性半導体記憶装置 |
| JP2004273110A (ja) * | 2003-03-10 | 2004-09-30 | Sharp Corp | 温度補償ｒｒａｍ回路 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008046116A (ja) * | 2006-07-20 | 2008-02-28 | Semiconductor Energy Lab Co Ltd | 位置情報検出システム及び位置情報検出方法 |
| US8587479B2 (en) | 2006-07-20 | 2013-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Position information detection system and position information detection method |
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