JP2006135308A5

JP2006135308A5 -

Info

Publication number: JP2006135308A5
Application number: JP2005289970A
Authority: JP
Filing date: 2005-10-03
Publication date: 2008-11-06
Anticipated expiration: 2025-10-03

Claims

Having a deflector at the entrance of the optical waveguide;
The optical waveguide is disposed parallel to the optical axis of the laser beam,
The beam homogenizer is characterized in that the deflector has two reflecting surfaces inclined with respect to the optical axis of the laser beam.

Includes a cylindrical lens array, an optical waveguide, and a deflector,
The optical waveguide is disposed parallel to the optical axis of the laser beam,
The deflecting body is provided at an entrance of the optical waveguide,
The beam homogenizer is characterized in that the deflector has two reflecting surfaces inclined with respect to the optical axis of the laser beam.

In claim 1 or 2 ,
The optical waveguide has two reflecting surfaces facing each other, and is a beam homogenizer.

Has a deflector at the entrance of the light pipe,
The light pipe is disposed parallel to the optical axis of the laser beam,
The beam homogenizer is characterized in that the deflector has two reflecting surfaces inclined with respect to the optical axis of the laser beam.

Includes a cylindrical lens array, and the light pipe, and a deflector,
The light pipe is disposed parallel to the optical axis of the laser beam,
The deflecting body is provided at an entrance of the light pipe,
The beam homogenizer is characterized in that the deflector has two reflecting surfaces inclined with respect to the optical axis of the laser beam.

In claim 4 or 5 ,
The light pipe has two reflecting surfaces facing each other, and is a beam homogenizer.

In any one of Claims 1 thru | or 6 ,
The beam homogenizer is characterized in that the inclination angle θ of the reflecting surface of the deflecting body is α <θ <(90 ° + α) / 2, where α is the convergence angle of the laser beam.

In any one of Claims 1 thru | or 7 ,
The beam homogenizer, wherein the deflector has an angle adjustment mechanism for adjusting an inclination angle of the reflecting surface.

In claim 8 ,
Said angle adjustment mechanism, the beam homogenizer, wherein Goniome Tama others are manipulator.

In any one of Claims 1 thru | or 9 ,
The beam homogenizer is characterized in that the aspect ratio of the beam spot irradiated to the irradiated surface from the beam homogenizer is 100 or more.

A laser irradiation apparatus comprising the beam homogenizer according to claim 1.

Forming a non-single crystal semiconductor film on the substrate;
The energy distribution on the irradiated surface of the laser beam emitted from the light source is made uniform by a cylindrical lens array, a deflector, and an optical waveguide,
A stage provided with the substrate on which the non-single crystal semiconductor film is formed,
Making the surface of the non-single crystal semiconductor film coincide with the irradiated surface;
Scanning the stage relative to the laser beam while irradiating the laser beam;
A method for manufacturing a semiconductor device in which the non-single-crystal semiconductor film is heat-treated ,
The optical waveguide is disposed parallel to the optical axis of the laser beam;
The deflector is provided at an entrance of the optical waveguide;
2. A method for manufacturing a semiconductor device, wherein the two reflecting surfaces of the deflecting body are inclined with respect to an optical axis of a laser beam .

In claim 12 ,
The laser beam is formed into a rectangular beam spot having a uniform energy distribution on the irradiated surface,
The cylindrical lens array makes the energy distribution in the long side direction of the rectangular beam spot uniform, and the optical waveguide makes the energy distribution in the short side direction of the rectangular beam spot uniform. Device fabrication method.

In claim 12 or 13 ,
The method for manufacturing a semiconductor device, wherein the optical waveguide has two reflecting surfaces facing each other.

Forming a non-single crystal semiconductor film on the substrate;
The energy distribution on the irradiated surface of the laser beam emitted from the light source is made uniform by a cylindrical lens array, a deflector, and a light pipe,
A stage provided with the substrate on which the non-single crystal semiconductor film is formed,
Making the surface of the non-single crystal semiconductor film coincide with the irradiated surface;
Scanning the stage relative to the laser beam while irradiating the laser beam;
A method for manufacturing a semiconductor device in which the non-single-crystal semiconductor film is heat-treated ,
The light pipe is disposed parallel to the optical axis of the laser beam;
The deflector is provided at an entrance of the light pipe;
2. A method for manufacturing a semiconductor device, wherein the two reflecting surfaces of the deflecting body are inclined with respect to an optical axis of a laser beam .

In claim 15 ,
The laser beam is formed into a rectangular beam spot having a uniform energy distribution on the irradiated surface,
The cylindrical lens array makes the energy distribution in the long side direction of the rectangular beam spot uniform, and the light pipe makes the energy distribution in the short side direction of the rectangular beam spot uniform. Device fabrication method.

In claim 15 or 16 ,
The method of manufacturing a semiconductor device, wherein the light pipe has two reflecting surfaces facing each other.

In any one of Claims 12 thru | or 17 ,
The method of manufacturing a semiconductor device, wherein an inclination angle θ of the reflecting surface of the deflecting body is α <θ <(90 ° + α) / 2, where α is a convergence angle of a laser beam.

In any one of Claims 12 thru | or 18 ,
The method of manufacturing a semiconductor device, wherein the deflector has an angle adjustment mechanism for adjusting an inclination angle of the reflection surface.

In claim 19 ,
The angle adjusting mechanism is a goniometer or a manipulator.

In any one of Claims 12 to 20 ,
The method of manufacturing a semiconductor device, wherein the laser beam oscillator includes any one of an excimer laser, a YAG laser, a glass laser, a YVO ₄ laser, a YLF laser, and an Ar laser.

A device according to any one of claims 12 to 21 .
A method for manufacturing a semiconductor device, wherein an aspect ratio of a beam spot irradiated from a light source to an irradiated surface is 100 or more.