JP2006128890A - Imaging device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an imaging device enabling a user to know the temperature state of a detector or controlling a temperature of the detector. <P>SOLUTION: A radiographic X-ray device as the imaging device is provided with a temperature sensor 14 for measuring a temperature of a flat-panel type X-ray detector (an FPD) 3. The user can know the temperature state of the FPD 3 by providing the temperature sensor 14 to the device. A monitor 13 for displaying temperature data (temperature data 131) measured by the temperature sensor 14 is also provided to the device. Consequently, the user can further easily know the temperature state of the FPD 3 by the monitor 13. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an imaging apparatus used in the medical field, the industrial field, the nuclear field, and the like.

  An imaging apparatus that performs imaging based on detected light or radiation includes a light or radiation detector that detects light or radiation. An X-ray detector will be described as an example. The X-ray detector has an X-ray sensitive X-ray conversion layer (semiconductor layer), and the X-ray conversion layer converts into carriers (charge information) by the incidence of X-rays, and reads the converted carriers. To detect X-rays. As the X-ray conversion layer, an amorphous selenium (a-Se) film is used (for example, see Non-Patent Document 1).

When radiation imaging is performed by irradiating the subject with X-rays, a radiation image transmitted through the subject is projected onto the amorphous selenium film, and carriers proportional to the density of the image are generated in the film. After that, the carriers generated in the film are collected by the two-dimensionally arranged carrier collecting electrodes and integrated for a predetermined time (also referred to as “accumulation time”). Read out.
W. Zhao, et al., "A flat panel detector for digital radiology using active matrix readout of amorphous selenium," Proc. SPIE Vol. 2708, pp. 523-531, 1996.

  However, when the X-ray conversion layer is formed of amorphous selenium, there is a problem that temperature characteristics are severe. That is, amorphous selenium crystallizes when the temperature exceeds 40 ° C., and there is a problem that the function as the conversion layer is permanently lost.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide an imaging apparatus that can detect the temperature state of the detector or control the temperature of the detector.

In order to achieve such an object, the present invention has the following configuration.
That is, according to the first aspect of the present invention, light or radiation detection detects light or radiation by converting the light or radiation information into charge information by the incidence of light or radiation and reading the converted charge information. An image pickup apparatus that includes a detector and obtains an image based on charge information detected from a light or radiation detector, comprising temperature measuring means for measuring the temperature of the detector.

  [Operation / Effect] According to the first aspect of the present invention, the radiation detector converts the light or radiation information into charge information by the incidence of light or radiation, and reads the converted charge information so that the radiation detector can detect light or radiation. Detect radiation. And imaging is performed by obtaining an image based on the charge information detected from the light or radiation detector. At this time, the temperature condition of the detector can be understood by providing the temperature measuring means for measuring the temperature of the detector described above.

  According to a fifth aspect of the present invention, the light or radiation detection detects light or radiation by converting the light or radiation information into charge information by the incidence of light or radiation and reading the converted charge information. An imaging device comprising a detector and obtaining an image based on charge information detected from a light or radiation detector, comprising temperature control means for controlling the temperature of the detector to a predetermined temperature It is.

  [Operation / Effect] According to the invention described in claim 5, the light or radiation information is converted into charge information by the incidence of light or radiation, and the converted charge information is read, so that the radiation detector can detect light or radiation. Detect radiation. And imaging is performed by obtaining an image based on the charge information detected from the light or radiation detector. At this time, the temperature of the detector can be controlled by providing temperature control means for controlling the temperature of the detector described above to a predetermined temperature.

  In the former invention described above (invention described in claim 1), it is preferable to provide display means for displaying the measured value measured by the temperature measuring means (invention described in claim 2). By providing the display means, it becomes easier to understand the temperature state of the detector by the display means.

  In the former invention (invention according to claim 1), it is preferable to provide notifying means for notifying abnormality when the measured value measured by the temperature measuring means deviates from a predetermined operating range (in claim 3). Described invention). By providing the notification means, it becomes easy to understand the abnormal state of the detector by the notification means. Similarly, in the latter invention (the invention described in claim 5), the above-described temperature control means has a function of detecting an abnormality with respect to the temperature of the detector, and the above-described abnormality is detected from the temperature control means. In addition, it is preferable that the apparatus is provided with a notification means for reporting the abnormality (the invention according to claim 6).

  In the former invention (the invention described in claim 1), the apparatus preferably has a function of stopping power supply to the detector when the measured value measured by the temperature measuring means deviates from a predetermined operating range. (Invention of Claim 4). By having such a function of detecting the occurrence of a temperature-related abnormality caused by deviating from a predetermined operating range, it is possible to prevent such a situation by stopping the power supply to the detector. In addition, it is possible to prevent a situation in which an abnormality occurs in imaging by performing detection even though an abnormality relating to temperature has occurred. Similarly, in the latter invention (the invention described in claim 5), the above-described temperature control means has a function of detecting an abnormality with respect to the temperature of the detector, and the above-described abnormality is detected from the temperature control means. In addition, it is preferable that the apparatus has a function of stopping the power supply to the detector (the invention according to claim 7).

  In each of the above-described inventions, the detector includes a semiconductor layer that converts light or radiation information into charge information upon incidence of light or radiation, and the semiconductor layer is formed using selenium as a main material ( (Invention of Claim 8) In the case of selenium, the temperature characteristic is severe. In particular, in the case of amorphous selenium, if the temperature exceeds 40 ° C., it will crystallize and the function of converting light or radiation into charge information in the semiconductor layer will be lost. is there. Therefore, when the present invention is applied to selenium, the temperature condition of the detector can be known or the temperature of the detector can be controlled, and damage to the selenium due to the temperature can be minimized.

  The imaging apparatus according to the present invention includes temperature measuring means for measuring the temperature of the detector (the invention according to claim 1), or temperature control means for controlling the temperature of the detector to a predetermined temperature ( According to the fifth aspect of the present invention, the temperature condition of the detector can be known or the temperature of the detector can be controlled.

Embodiment 1 of the present invention will be described below with reference to the drawings.
FIG. 1 is a block diagram of the X-ray fluoroscopic apparatus according to the first embodiment, and FIG. 2 is an equivalent circuit of a flat panel X-ray detector used in the X-ray fluoroscopic apparatus as viewed from the side. FIG. 3 is an equivalent circuit of the flat panel X-ray detector in plan view. In Example 1, including Example 2 described later, a flat panel X-ray detector (hereinafter referred to as “FPD” as appropriate) is taken as an example of a light or radiation detector, and X-ray fluoroscopic imaging is used as an imaging device. The apparatus will be described as an example.

  As shown in FIG. 1, the X-ray fluoroscopic apparatus according to the first embodiment including the second embodiment to be described later, and the top plate 1 on which the subject M is placed, and the X-ray toward the subject M are arranged. And an FPD 3 that detects X-rays transmitted through the subject M. The FPD 3 corresponds to the radiation detector in the present invention.

  In addition, the X-ray fluoroscopic apparatus includes a top panel control unit 4 that controls the elevation and horizontal movement of the top panel 1, an FPD control unit 5 that controls scanning of the FPD 3, and the tube voltage and tube current of the X-ray tube 2. Are output from an X-ray tube control unit 7 having a high voltage generation unit 6 that generates a signal, an A / D converter 8 that digitizes and extracts an X-ray detection signal that is a charge signal from the FPD 3, and an A / D converter 8. An image processing unit 9 that performs various processes based on the detected X-ray detection signal, a controller 10 that controls these components, a memory unit 11 that stores processed images, and an operator perform input settings. An input unit 12 and a monitor 13 for displaying processed images are provided.

  The top board control unit 4 horizontally moves the top board 1 to accommodate the subject M up to the imaging position, moves the top and bottom, rotates and horizontally moves the subject M to a desired position, or horizontally moves the subject M. Then, the image is picked up, or the image is moved horizontally after the image pickup is finished, and the control is performed to retract from the image pickup position. The FPD control unit 5 performs control related to scanning by moving the FPD 3 horizontally or rotating around the body axis of the subject M. The high voltage generation unit 6 generates a tube voltage and a tube current for irradiating X-rays and applies them to the X-ray tube 2. The X-ray tube control unit 7 moves the X-ray tube 2 horizontally, Control relating to scanning by rotating around the axis of the body axis of M, control of the setting of the irradiation field of the collimator (not shown) on the X-ray tube 3 side, and the like are performed. When scanning the X-ray tube 2 or the FPD 3, the X-ray tube 2 and the FPD 3 move while facing each other so that the FPD 3 can detect the X-rays emitted from the X-ray tube 2.

  The controller 10 is configured by a central processing unit (CPU) and the like, and the memory unit 11 is configured by a storage medium represented by ROM (Read-only Memory), RAM (Random-Access Memory), and the like. Yes. The input unit 12 includes a pointing device represented by a mouse, a keyboard, a joystick, a trackball, a touch panel, and the like. In the fluoroscopic imaging apparatus, the FPD 3 detects X-rays transmitted through the subject M, and the image processing unit 9 performs image processing based on the detected X-rays, thereby imaging the subject M.

  In the first embodiment, the FPD control unit 5 includes a power supply unit 51 that supplies power to the FPD 3, and the monitor 13 uses temperature data measured by a temperature sensor 14 described later (see temperature data 131 in FIG. 1). A function to display and a function to display a temperature warning (see temperature warning 132 in FIG. 1) when it is determined whether or not there is an abnormality in a temperature warning determination unit 15 described later.

  The X-ray fluoroscopic apparatus further includes a temperature sensor 14 that measures the temperature of the FPD 3 and a temperature warning determination that determines whether or not temperature data that is a measurement value measured by the temperature sensor 14 has deviated from a predetermined operating range. Part 15. When the temperature data deviates from a predetermined operation range, an abnormality has occurred with respect to the temperature of the FPD 3. Therefore, the temperature warning determination unit 15 determines whether there is an abnormality. The temperature data measured by the temperature sensor 14 is displayed on the monitor 13 (see the temperature data 131 in FIG. 1). If the temperature warning determination unit 15 determines that there is an abnormality, the abnormality is notified by displaying on the monitor 13 (see the temperature warning 132 in FIG. 1). Therefore, the monitor 13 corresponds to the display means in this invention, and also corresponds to the notification means in this invention. The temperature sensor 14 corresponds to the temperature measuring means in this invention.

  When it is determined that there is an abnormality, the temperature warning determination unit 15 outputs a power supply stop signal to the power supply unit 51 in the FPD control unit 5 in addition to displaying on the monitor 13 described above. When the power supply unit 51 receives this power supply stop signal, power supply to the FPD 3 is stopped. The X-ray fluoroscopic apparatus according to the first embodiment has a function of stopping power supply to the FPD 3 when temperature data measured by the temperature sensor 14 deviates from a predetermined operation range.

  As shown in FIG. 2, the FPD 3 includes a radiation-sensitive semiconductor thick film 31 in which carriers are generated when radiation such as X-rays enters, and a voltage application electrode 32 provided on the surface of the semiconductor thick film 31. The carrier collecting electrode 33 provided on the back surface opposite to the radiation incident side of the semiconductor thick film 31, the charge storage capacitor Ca for collecting the collected carriers to the carrier collecting electrode 33, and the capacitor Ca. It includes a thin film transistor (TFT) Tr, which is a switch element for taking out charges that is normally OFF (blocked) for taking out charges. In Example 1, including Example 2 to be described later, the semiconductor thick film 31 is formed of a radiation-sensitive material, for example, amorphous selenium, in which carriers are generated by the incidence of radiation. May be a light-sensitive substance that produces The semiconductor thick film 31 corresponds to the semiconductor layer in this invention.

  In addition to this, the first embodiment including the second embodiment described later includes a data line 34 connected to the source of the thin film transistor Tr and a gate line 35 connected to the gate of the thin film transistor Tr. The voltage application electrode 32, the semiconductor thick film 31, the carrier collection electrode 33, the capacitor Ca, the thin film transistor Tr, the data line 34, and the gate line 35 are laminated on the insulating substrate 36.

  As shown in FIGS. 2 and 3, for each of the carrier collection electrodes 33 formed in a large number (for example, 1024 × 1024 or 4096 × 4096) in a vertical / horizontal two-dimensional matrix arrangement, The capacitor Ca and the thin film transistor Tr are connected to each other, and the carrier collecting electrode 33, the capacitor Ca, and the thin film transistor Tr are separately formed as each detection element DU. Further, the voltage application electrode 32 is formed over the entire surface as a common electrode of all the detection elements DU. Further, as shown in FIG. 3, the data lines 34 described above are arranged in parallel in the horizontal (X) direction, and the gate lines 35 described above are arranged in the vertical (Y) direction as shown in FIG. The data lines 34 and the gate lines 35 are connected to the detection elements DU. The data line 34 is connected to the amplifier array circuit 37, and the gate line 35 is connected to the gate driver circuit 38. The number of detector elements DU arranged is not limited to the above-mentioned 1024 × 1024 or 4096 × 4096, and the number of detector elements DU can be changed according to the embodiment. Therefore, the form with only one detection element DU may be sufficient.

  The detection elements DU are patterned on the insulating substrate 36 in a two-dimensional matrix arrangement, and the insulating substrate 36 on which the detection elements DU are patterned is also called an “active matrix substrate”.

  When the periphery of the detection element DU of the FPD 3 is created, the data line 34 and the gate line 35 are formed on the surface of the insulating substrate 36 by using a thin film forming technique by various vacuum deposition methods or a pattern technique by photolithography. A thin film transistor Tr, a capacitor Ca, a carrier collection electrode 33, a semiconductor thick film 31, a voltage application electrode 32, and the like are sequentially stacked. The semiconductor for forming the semiconductor thick film 31 can be appropriately selected according to the application, withstand voltage, etc., as exemplified by an amorphous semiconductor and a polycrystalline semiconductor.

Next, operations of the X-ray fluoroscopic apparatus and the flat panel X-ray detector (FPD) according to the first embodiment will be described. While applying a bias voltage V _A of the voltage application electrode 32 to a high voltage (e.g., several 100V~ number about 10 kV), to be incident radiation to be detected. The application of the bias voltage V _A is also controlled from the FPD controller 5.

  Carriers are generated by the incidence of radiation, and the carriers are stored in the charge storage capacitor Ca as charge information. The gate line 35 is selected by the scanning signal for extracting signals from the gate driver circuit 38 (that is, the gate drive signal), and the detection element DU connected to the selected gate line 35 is selected and designated. The electric charge accumulated in the capacitor Ca of the designated detection element DU is read out to the data line 34 via the thin film transistor Tr that has been turned on by the signal of the selected gate line 35.

  The address (address) of each detection element DU is specified by a scanning signal for extracting signals from the data line 34 and the gate line 35 (a gate drive signal in the case of the gate line 35 and an amplifier drive signal in the case of the data line 34). ). When a scanning signal for signal extraction is sent to the amplifier array circuit 37 and the gate driver circuit 38, each detection element DU is selected from the gate driver circuit 38 in accordance with the scanning signal (gate driving signal) in the longitudinal (Y) direction. Then, the amplifier array circuit 37 is switched in accordance with the scanning signal (amplifier driving signal) in the horizontal (X) direction, whereby the charge accumulated in the capacitor Ca of the selected detection element DU is amplified via the data line 34. It is sent to the circuit 37. Then, the signal is amplified by the amplifier array circuit 37, output from the amplifier array circuit 37 as an X-ray detection signal, and sent to the A / D converter 8.

  For example, when the FPD 3 according to the first embodiment is used for detection of a fluoroscopic X-ray image of an X-ray fluoroscopic imaging apparatus, the charge information (X-ray detection signal) read to the outside through the data line 34 by the above-described operation. ) Is converted into image information and output as a fluoroscopic image.

  The temperature sensor 14 continues to measure the temperature of the FPD 3 and displays this temperature data on the monitor 13. On the other hand, the temperature data is also sent to the temperature warning determination unit 15. The temperature warning determination unit 15 determines whether or not the sent temperature data has deviated from a predetermined operating range. In the case of amorphous selenium forming the semiconductor thick film 31, since it crystallizes when it exceeds 40 ° C., a temperature up to 35 ° C., for example, is set as the operating range of the FPD 3 with a margin. And if it exceeds 35 degreeC, it will determine with abnormality regarding the temperature of FPD3 having generate | occur | produced. When the temperature warning determination unit 15 determines that there is an abnormality, the abnormality is displayed on the monitor 13 to notify the abnormality, and a power supply stop signal is output to the power supply unit 51 in the FPD control unit 5. Then, power supply to the FPD 3 is stopped.

  According to the X-ray fluoroscopic apparatus according to the first embodiment described above, the semiconductor thick film 31 converts the radiation into charge information that is a carrier by the incidence of X-rays, and reads the converted carrier to thereby obtain a flat panel type. The X-ray detector (FPD) 3 detects X-rays. Then, imaging is performed by obtaining a radiation image based on the X-ray detection signal (carrier) detected from the FPD 3. At this time, by providing the temperature sensor 14 for measuring the temperature of the FPD 3, the temperature state of the FPD 3 can be understood.

  In the first embodiment, the monitor 13 that displays the temperature data measured by the temperature sensor 14 makes it easier to understand the temperature state of the FPD 3 by the monitor 13. Further, in the first embodiment, when the temperature data measured by the temperature sensor 14 deviates from a predetermined operating range, the monitor 13 is also used as an informing means for informing an abnormality. By providing the monitor 13, the monitor 13 makes it easy to understand the abnormal state of the FPD 3. Further, the first embodiment has a function of stopping power supply to the FPD 3 when the operation range is deviated. By having such a function of detecting the occurrence of a temperature-related abnormality caused by deviating from the predetermined operating range, it is possible to prevent such a situation by stopping the power supply to the FPD 3. In addition, it is possible to prevent a situation in which an abnormality occurs in imaging by performing detection even though an abnormality relating to temperature has occurred.

  The first embodiment also includes a radiation-sensitive semiconductor thick film 31 that converts X-rays into carriers upon incidence of X-rays, and the semiconductor thick film 31 is formed mainly of selenium like amorphous selenium. Yes. Here, “selenium” mainly includes, in addition to those formed of 100% selenium, selenium in which impurities such as electrons and holes are diffused, and selenium compounds. In the case of selenium, the temperature characteristics are severe. In particular, in the case of amorphous selenium, crystallization occurs when the temperature exceeds 40 ° C., and the function of converting X-rays into carriers in the semiconductor thick film 31 is lost. is there. Therefore, when the present invention is applied to selenium, the temperature condition of the FPD 3 can be understood, and damage to the selenium due to the temperature can be minimized.

Next, Embodiment 2 of the present invention will be described with reference to the drawings.
FIG. 4 is a block diagram of an X-ray fluoroscopic apparatus according to the second embodiment. The portions common to the first embodiment are denoted by the same reference numerals, and the illustration thereof is omitted and the description thereof is omitted. The flat panel X-ray detector (FPD) 3 has the same configuration as that shown in FIGS.

  The X-ray fluoroscopic apparatus according to the second embodiment is similar to the first embodiment described above in that the top plate 1, the X-ray tube 2, the FPD 3, the top plate control unit 4, the FPD control unit 5, and the X-ray tube control unit 7. An A / D converter 8, an image processing unit 9, a controller 10, a memory unit 11, an input unit 12, and a monitor 13.

  A difference from the first embodiment is that a temperature maintaining unit 16 is provided in the second embodiment instead of the temperature sensor 14 and the temperature warning determination unit 15 of the first embodiment. The temperature maintaining unit 16 controls the temperature of the FPD 3 to a predetermined temperature, and is configured by a cooler or a heater, or one having both functions of cooling and heating. If the temperature of the FPD 3 tends to increase, the temperature maintaining unit 16 may be configured by a cooler, and if the temperature of the FPD 3 tends to decrease, the temperature maintaining unit 16 is configured by a heater. May be. If the temperature of the FPD 3 tends to rise and fall outside the operating range, the temperature maintaining unit 16 may be configured with both cooling and heating functions.

  The temperature maintaining unit 16 has the function of the temperature warning determination unit 16 of the first embodiment, that is, the function of detecting an abnormality with respect to the temperature of the FPD 3, and is configured to notify the abnormality. When notifying, it is displayed on the monitor 13 as in the first embodiment (see the temperature warning 132 in FIG. 4). Further, in the second embodiment, since the temperature sensor 14 of the first embodiment is not provided, accurate temperature data is not measured, and the monitor 13 displays the temperature data 131 as shown in the temperature data 131 of FIG. 1 of the first embodiment. Temperature data is not displayed. Note that the temperature maintaining unit 16 may be provided with a function of accurately measuring the temperature of the FPD 3 like the temperature sensor 14 of the first embodiment. The temperature maintaining unit 16 corresponds to the temperature control means in this invention.

  When an abnormality is detected, the temperature maintaining unit 16 outputs a power supply stop signal to the power supply unit 51 in the FPD control unit 5 in addition to displaying on the monitor 13 as in the first embodiment. When the power supply unit 51 receives this power supply stop signal, power supply to the FPD 3 is stopped.

  According to the fluoroscopic imaging apparatus according to the second embodiment described above, the temperature of the FPD 3 can be controlled by including the temperature maintaining unit 16 that controls the temperature of the FPD 3 to a predetermined temperature.

  In the second embodiment, when an abnormality is detected, the monitor 13 is also used as a notification means for notifying the abnormality as in the first embodiment. By providing the monitor 13, the monitor 13 makes it easy to understand the abnormal state of the FPD 3. Further, the second embodiment has a function of stopping power supply to the FPD 3 in the same manner as the first embodiment when an abnormality is detected. Therefore, by having such a function for detecting a situation where an abnormality relating to temperature has occurred, it is possible to prevent such a situation by stopping the power supply to the FPD 3. In addition, it is possible to prevent a situation in which an abnormality occurs in imaging by performing detection even though an abnormality relating to temperature has occurred. Moreover, by applying to the semiconductor thick film 31 (refer FIG. 2) formed with amorphous selenium like Example 1, damage to the selenium due to temperature can be minimized.

  The present invention is not limited to the above-described embodiment, and can be modified as follows.

  (1) In each of the above-described embodiments, the X-ray fluoroscopic apparatus as shown in FIGS. 1 and 4 has been described as an example. However, the present invention is, for example, X-ray fluoroscopic imaging disposed on a C-type arm. You may apply also to an apparatus. The present invention may also be applied to an X-ray CT apparatus.

  (2) In each of the above-described embodiments, the present invention is applied to a “direct conversion type” radiation detector in which incident radiation is directly converted into charge information by the semiconductor thick film 1 (semiconductor layer). Even if the present invention is applied to an "indirect conversion type" radiation detector that converts radiation into light by a conversion layer such as a scintillator and converts the light into charge information by a semiconductor layer formed of a photosensitive material. Good. The photosensitive semiconductor layer may be formed of a thick film similar to the above-described embodiment, or may be formed of a photodiode.

  (3) In each of the above-described embodiments, the X-ray detector for detecting X-rays has been described as an example. However, in the present invention, a radioisotope (RI) is administered like an ECT (Emission Computed Tomography) apparatus. The radiation detector is not particularly limited as long as it is a radiation detector that detects radiation, as exemplified by a γ-ray detector that detects γ-rays emitted from the subject. Similarly, the present invention is not particularly limited as long as it is an apparatus that performs imaging by detecting radiation, as exemplified by the ECT apparatus described above.

  (4) In each of the above-described embodiments, the radiation detector typified by X-rays has been described as an example. However, the present invention can also be applied to a photodetector that detects light. Therefore, the device is not particularly limited as long as the device detects light and performs imaging.

  (5) The first embodiment and the second embodiment described above may be combined with each other. Like the temperature sensor 14 of the first embodiment, a temperature measuring unit for measuring the temperature of the detector (FPD 3 in the first and second embodiments) is provided, and the temperature of the detector is set to a predetermined value like the temperature maintaining unit 16 of the second embodiment. A temperature control means for controlling the temperature may be provided. Further, the temperature maintaining unit 16 may be configured to control the temperature of the FPD 3 based on the temperature data of the temperature sensor 14. Thereby, the temperature of the FPD 3 can be controlled more precisely.

  (6) In the first embodiment described above, the monitor 13 that displays the temperature data that is the measurement value measured by the temperature sensor 14 is provided. However, the temperature from the temperature sensor 14 is not displayed on the monitor 13. A function of notifying abnormality based on the data or only stopping power supply to the FPD 3 may be used.

  (7) In each of the above-described embodiments, when there is an abnormality, the monitor 13 is notified of the abnormality and a temperature warning is given, but this is a function that only stops power supply to the FPD 3 without notifying the abnormality. May be. The means for notifying the abnormality is not limited to means for displaying on the monitor 13 and appealing to the operator's vision, but may be a means for making a warning sound and appealing to the operator's senses. If there is, the notification means is not particularly limited.

  (8) In each of the above-described embodiments, power is supplied to the FPD 3 when there is an abnormality. However, only temperature control by the temperature maintaining unit 16 of the second embodiment is performed without stopping power supply to the FPD 3. Alternatively, the abnormality may be notified only, or the temperature data as the measurement value may be displayed on the monitor 13 as in the first embodiment.

1 is a block diagram of an X-ray fluoroscopic apparatus according to Embodiment 1. FIG. 2 is an equivalent circuit of a flat panel X-ray detector as viewed from the side, which is used in an X-ray fluoroscopic apparatus. 2 is an equivalent circuit of a flat panel X-ray detector in plan view. 6 is a block diagram of an X-ray fluoroscopic apparatus according to Embodiment 2. FIG.

Explanation of symbols

3 ... Flat panel X-ray detector (FPD)
DESCRIPTION OF SYMBOLS 13 ... Monitor 14 ... Temperature sensor 16 ... Temperature maintenance part 31 ... Semiconductor thick film

Claims (8)

  A light or radiation detector that detects light or radiation by converting the light or radiation information into charge information by the incidence of light or radiation and reading the converted charge information is detected from the light or radiation detector. An imaging apparatus for obtaining an image based on the charge information, comprising temperature measuring means for measuring the temperature of the detector.   The imaging apparatus according to claim 1, further comprising a display unit that displays a measurement value measured by the temperature measurement unit.   3. The imaging apparatus according to claim 1, further comprising a notifying unit for notifying an abnormality when a measured value measured by the temperature measuring unit deviates from a predetermined operation range. .   4. The imaging device according to claim 1, wherein when the measurement value measured by the temperature measurement unit deviates from a predetermined operation range, the function of stopping power supply to the detector is provided. An imaging device comprising the device.   A light or radiation detector that detects light or radiation by converting the light or radiation information into charge information by the incidence of light or radiation and reading the converted charge information is detected from the light or radiation detector. An image pickup apparatus that obtains an image based on the charged information, and further comprises temperature control means for controlling the temperature of the detector to a predetermined temperature.   6. The imaging detection apparatus according to claim 5, wherein the temperature control unit has a function of detecting an abnormality with respect to the temperature of the detector, and a notification unit that notifies the abnormality when the abnormality is detected from the temperature control unit. An imaging apparatus comprising: the apparatus.   7. The imaging apparatus according to claim 5, wherein the temperature control unit has a function of detecting an abnormality with respect to the temperature of the detector, and the detector is detected when the abnormality is detected from the temperature control unit. An image pickup apparatus having a function of stopping power supply to the apparatus. The imaging device according to any one of claims 1 to 7, wherein the detector includes a semiconductor layer that converts light or radiation information into charge information by incidence of light or radiation, and the semiconductor layer includes: An imaging device characterized by being formed using selenium as a main raw material.

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