JP2006128723A - 半導体基板の切断方法 - Google Patents
半導体基板の切断方法 Download PDFInfo
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- JP2006128723A JP2006128723A JP2006013963A JP2006013963A JP2006128723A JP 2006128723 A JP2006128723 A JP 2006128723A JP 2006013963 A JP2006013963 A JP 2006013963A JP 2006013963 A JP2006013963 A JP 2006013963A JP 2006128723 A JP2006128723 A JP 2006128723A
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- semiconductor substrate
- silicon wafer
- cut
- resin layer
- planned cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
Abstract
【解決手段】 半導体基板11の内部に、集光点におけるピークパワー密度が1×108(W/cm2)以上でかつパルス幅が1μm以下の条件で、切断予定ラインに沿ってレーザ光を照射することにより、半導体基板11の内部に形成される溶融処理領域13により切断予定部を形成する工程と、ダイボンド樹脂層23を介して半導体基板11に貼られたシート20を拡張させることにより、切断予定部に沿って、半導体基板11及びダイボンド樹脂層23を切断する工程とを含む。
【選択図】 図11
Description
(A)半導体基板:シリコンウェハ(厚さ350μm、外径4インチ)
(B)レーザ
光源:半導体レーザ励起Nd:YAGレーザ
波長:1064nm
レーザ光スポット断面積:3.14×10-8cm2
発振形態:Qスイッチパルス
繰り返し周波数:100kHz
パルス幅:30ns
出力:20μJ/パルス
レーザ光品質:TEM00
偏光特性:直線偏光
(C)集光用レンズ
倍率:50倍
N.A.:0.55
レーザ光波長に対する透過率:60パーセント
(D)半導体基板が載置される載置台の移動速度:100mm/秒
Claims (2)
- 半導体基板の内部に、集光点におけるピークパワー密度が1×108(W/cm2)以上でかつパルス幅が1μm以下の条件で、切断予定ラインに沿ってレーザ光を照射することにより、前記半導体基板の内部に形成される溶融処理領域により切断予定部を形成する工程と、
ダイボンド樹脂層を介して前記半導体基板に貼られたシートを拡張させることにより、前記切断予定部に沿って、前記半導体基板及び前記ダイボンド樹脂層を切断する工程とを含む半導体基板の切断方法。 - 前記切断予定部を形成する工程において、前記切断予定ラインを含む面を撮像することを伴う、請求項1に記載の半導体基板の切断方法。
Priority Applications (1)
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---|---|---|---|
JP2006013963A JP3935186B2 (ja) | 2002-03-12 | 2006-01-23 | 半導体基板の切断方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2002067348 | 2002-03-12 | ||
JP2002067372 | 2002-03-12 | ||
JP2006013963A JP3935186B2 (ja) | 2002-03-12 | 2006-01-23 | 半導体基板の切断方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2002351600A Division JP4358502B2 (ja) | 2002-03-12 | 2002-12-03 | 半導体基板の切断方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006128723A true JP2006128723A (ja) | 2006-05-18 |
JP3935186B2 JP3935186B2 (ja) | 2007-06-20 |
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JP2006013963A Expired - Lifetime JP3935186B2 (ja) | 2002-03-12 | 2006-01-23 | 半導体基板の切断方法 |
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Cited By (8)
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US7732730B2 (en) | 2000-09-13 | 2010-06-08 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US7749867B2 (en) | 2002-03-12 | 2010-07-06 | Hamamatsu Photonics K.K. | Method of cutting processed object |
US8058103B2 (en) | 2003-09-10 | 2011-11-15 | Hamamatsu Photonics K.K. | Semiconductor substrate cutting method |
US8247734B2 (en) | 2003-03-11 | 2012-08-21 | Hamamatsu Photonics K.K. | Laser beam machining method |
US8263479B2 (en) | 2002-12-03 | 2012-09-11 | Hamamatsu Photonics K.K. | Method for cutting semiconductor substrate |
US8268704B2 (en) | 2002-03-12 | 2012-09-18 | Hamamatsu Photonics K.K. | Method for dicing substrate |
US8685838B2 (en) | 2003-03-12 | 2014-04-01 | Hamamatsu Photonics K.K. | Laser beam machining method |
US8969752B2 (en) | 2003-03-12 | 2015-03-03 | Hamamatsu Photonics K.K. | Laser processing method |
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US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
-
2006
- 2006-01-23 JP JP2006013963A patent/JP3935186B2/ja not_active Expired - Lifetime
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US10796959B2 (en) | 2000-09-13 | 2020-10-06 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US7825350B2 (en) | 2000-09-13 | 2010-11-02 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US9837315B2 (en) | 2000-09-13 | 2017-12-05 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
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US8227724B2 (en) | 2000-09-13 | 2012-07-24 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US8946591B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Method of manufacturing a semiconductor device formed using a substrate cutting method |
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