JP2006122825A - Vacuum processing device - Google Patents

Vacuum processing device Download PDF

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JP2006122825A
JP2006122825A JP2004315095A JP2004315095A JP2006122825A JP 2006122825 A JP2006122825 A JP 2006122825A JP 2004315095 A JP2004315095 A JP 2004315095A JP 2004315095 A JP2004315095 A JP 2004315095A JP 2006122825 A JP2006122825 A JP 2006122825A
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vacuum
vacuum processing
lid member
upper lid
substrate
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JP4432728B2 (en
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Tatsuhiro Taguchi
竜大 田口
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Shimadzu Corp
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Shimadzu Corp
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Priority to KR1020050074172A priority patent/KR100629805B1/en
Priority to TW094127686A priority patent/TWI298910B/en
Priority to CNB2005100907927A priority patent/CN100382237C/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices

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  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Robotics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Solid Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a means which shortens a device stop time of a vacuum processing device. <P>SOLUTION: In the vacuum processing device 100, a loading/unloading chamber 10 and a plasma processing chamber 20 are coupled, the plasma processing chamber 20 being provided with a vacuum vessel 20a having an opening A on an upper surface, and a tabular top cover 30 opening and closing the opening A. On a lower surface (vacuum vessel 20a side) of the top cover 30 and the upper surface, the same devices for vacuum processing 31a and 31b are arranged respectively symmetrically in front and rear. By lifting the top cover 30 by an elevation mechanism 40, rotating it by 180° around a rotating shaft 54 by a rotating mechanism 50, and sending down by the elevation mechanism 40, the positions of the devices for vacuum processing 31a and 31b up-and-down turn over to carry out the vacuum processing using the device for vacuum processing 31b in parallel with the maintenance of the device for vacuum processing 31a. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、真空雰囲気中で薄膜形成、エッチング、熱処理などを行う真空処理装置に関する。   The present invention relates to a vacuum processing apparatus that performs thin film formation, etching, heat treatment, and the like in a vacuum atmosphere.

真空処理装置においては、真空中で被処理物の処理を行う真空容器と、真空容器に着脱自在な蓋部材とが設けられている。蓋部材の真空容器側の表面には、真空処理に必要な部材（例えば、シャワーヘッド）が配置されている。蓋部材は、真空処理のときには真空容器に密着し、真空容器内のメンテナンスおよび蓋部材に配置された部材のメンテナンスのときには、真空容器から離脱される。蓋部材を真空容器に着脱する着脱機構としては、蓋部材を水平方向にスライドするスライド機構と、蓋部材を水平軸を中心として回転させる回転機構とを有するものが知られている（例えば、特許文献１参照）。   In a vacuum processing apparatus, a vacuum container for processing an object to be processed in a vacuum and a lid member that is detachable from the vacuum container are provided. A member (for example, a shower head) necessary for vacuum processing is disposed on the surface of the lid member on the vacuum container side. The lid member is in close contact with the vacuum container during vacuum processing, and is detached from the vacuum container during maintenance in the vacuum container and maintenance of the member disposed on the lid member. As an attachment / detachment mechanism for attaching / detaching the lid member to / from the vacuum container, one having a slide mechanism for sliding the lid member in the horizontal direction and a rotating mechanism for rotating the lid member around the horizontal axis is known (for example, a patent). Reference 1).

特開２００１−１８５５３４号公報（第２頁、図６）JP 2001-185534 A (2nd page, FIG. 6)

特許文献１の真空処理装置では、蓋部材の真空容器側の表面に配置されている部材のメンテナンス中は、蓋部材を真空容器に装着できないので、真空処理が行えず、装置停止時間が長くなるという問題がある。   In the vacuum processing apparatus of Patent Document 1, the lid member cannot be attached to the vacuum container during maintenance of the member arranged on the surface of the lid member on the vacuum container side, so that the vacuum processing cannot be performed and the apparatus stop time becomes long. There is a problem.

（１）請求項１の発明による真空処理装置は、被処理基板を真空処理する真空容器と、真空容器の開口部を開閉する蓋部材と、蓋部材を真空容器に対して着脱自在に並進移動させる昇降機構と、蓋部材に連結された回転軸を回転することにより、蓋部材の表裏を反転させる回転機構とを備え、蓋部材の表裏両面には、同一の真空処理用機器が表裏対称的に配置されていることを特徴とする。
（２）請求項２の発明による真空処理装置は、請求項１の真空処理装置において、蓋部材は、矩形平板状であり、回転軸は、蓋部材の側面の中心軸心に一致しており、蓋部材の回転角度は、１８０°であることが好ましい。
（３）請求項３の発明による真空処理装置は、請求項１または２の真空処理装置において、被処理基板を真空容器へ投入するとともに、被処理基板を真空容器から処理済みの基板として回収する、大気開放と真空密閉とを切り換え可能な受け渡し室をさらに備えることを特徴とする。 (1) A vacuum processing apparatus according to a first aspect of the present invention is a vacuum vessel that vacuum-processes a substrate to be processed, a lid member that opens and closes an opening of the vacuum vessel, and a translational movement in which the lid member is detachably attached to the vacuum vessel. And a rotating mechanism that inverts the front and back of the lid member by rotating a rotating shaft connected to the lid member. The same vacuum processing equipment is symmetrical on both sides of the lid member. It is characterized by being arranged in.
(2) A vacuum processing apparatus according to a second aspect of the present invention is the vacuum processing apparatus according to the first aspect, wherein the lid member has a rectangular flat plate shape, and the rotation axis coincides with the central axis of the side surface of the lid member. The rotation angle of the lid member is preferably 180 °.
(3) A vacuum processing apparatus according to a third aspect of the present invention is the vacuum processing apparatus according to the first or second aspect, wherein the substrate to be processed is put into a vacuum container and the substrate to be processed is recovered from the vacuum container as a processed substrate. And a delivery chamber that can be switched between open to the atmosphere and sealed in vacuum.

本発明の真空処理装置では、蓋部材の表裏両面に同一の真空処理用機器が表裏対称的に配置されているので、一方の真空処理用機器のメンテナンス中でも他方の真空処理用機器を用いて真空処理を行うことができ、装置停止時間の短縮を図ることができる。   In the vacuum processing apparatus of the present invention, since the same vacuum processing equipment is symmetrically arranged on both the front and back surfaces of the lid member, the vacuum processing equipment is vacuumed using the other vacuum processing equipment even during maintenance of one vacuum processing equipment. Processing can be performed, and the apparatus stop time can be shortened.

以下、本発明の実施の形態による真空処理装置について図１〜３を参照して説明する。
図１は、本発明の実施の形態による真空処理装置の構成を模式的に示す全体構成図であり、図２は、真空処理装置の主要部の外観を模式的に示す斜視図である。図３は、本発明の実施の形態による真空処理装置における蓋部材（上蓋３０）の動作を説明する模式図である。図１〜３においては、同じ構成部品には同一符号を付し、ＸＹＺ直交座標で方向を表す。 A vacuum processing apparatus according to an embodiment of the present invention will be described below with reference to FIGS.
FIG. 1 is an overall configuration diagram schematically showing a configuration of a vacuum processing apparatus according to an embodiment of the present invention, and FIG. 2 is a perspective view schematically showing an external appearance of a main part of the vacuum processing apparatus. FIG. 3 is a schematic diagram for explaining the operation of the lid member (upper lid 30) in the vacuum processing apparatus according to the embodiment of the present invention. 1-3, the same code | symbol is attached | subjected to the same component and a direction is represented by XYZ rectangular coordinates.

図１において、真空処理装置１００は、ロード／アンロード室１０とプラズマ処理室２０の２つの室が連結された構成である。ロード／アンロード室１０には、装置外部に面してゲートＧ１が設けられ、ロード／アンロード室１０とプラズマ処理室２０の境界には、ゲートＧ２が設けられている。ゲートＧ１は、基板Ｗの装置外部への搬出入のときのみロード／アンロード室１０を開放し、搬出入以外のときには密閉している。ゲートＧ２は、基板Ｗの処理の際には両室内を密閉し、基板Ｗの搬出入の際には両室内を開放する。   In FIG. 1, a vacuum processing apparatus 100 has a configuration in which two chambers, a load / unload chamber 10 and a plasma processing chamber 20, are connected. The load / unload chamber 10 is provided with a gate G1 facing the outside of the apparatus, and a gate G2 is provided at the boundary between the load / unload chamber 10 and the plasma processing chamber 20. The gate G1 opens the load / unload chamber 10 only when the substrate W is carried in / out of the apparatus, and is sealed when the substrate W is not carried in / out. The gate G2 seals both chambers when the substrate W is processed, and opens both chambers when the substrate W is loaded and unloaded.

ロード／アンロード室１０内には、基板Ｗを装置外部から搬入してプラズマ処理室２０へ搬送したり、処理済みの基板Ｗをプラズマ処理室２０から搬入して装置外部へ搬出するための搬送ロボット１１が配置されている。ロード／アンロード室１０は、排気系１２とリーク系１３に配管接続され、大気開放と真空密閉とが切り換え可能に構成されている。   In the load / unload chamber 10, the substrate W is carried from the outside of the apparatus and transferred to the plasma processing chamber 20, or the processed substrate W is transferred from the plasma processing chamber 20 and carried out of the apparatus. A robot 11 is arranged. The load / unload chamber 10 is connected to an exhaust system 12 and a leak system 13 so as to be switchable between atmospheric release and vacuum sealing.

プラズマ処理室２０は、上面に開口部Ａを有する真空容器２０ａと開口部Ａを開閉する平板状の上蓋３０とを備え、上蓋３０を真空容器２０ａの上面に密着させることにより密閉された室となる。真空容器２０ａ内には、基板Ｗを加熱するためのヒータ２１が設置されている。上蓋３０の下面（真空容器２０ａ側）および上面には、それぞれプラズマ処理のための真空処理用機器３１ａおよび３１ｂが対称的に配置されている。すなわち、上蓋３０を上下反転させたときに、プラズマ処理室２０内で真空処理用機器３１ａおよび３１ｂが同じ位置になるように配置されている。上蓋３０の一方の側面の中央には、回転軸３２ａが突設され、他方の側面の中央には、回転軸３２ｂが回転軸３２ａと同軸となるように突設されている。   The plasma processing chamber 20 includes a vacuum vessel 20a having an opening A on the upper surface and a flat plate-like upper lid 30 for opening and closing the opening A, and a chamber sealed by bringing the upper lid 30 into close contact with the upper surface of the vacuum vessel 20a; Become. A heater 21 for heating the substrate W is installed in the vacuum container 20a. Vacuum processing devices 31a and 31b for plasma processing are symmetrically disposed on the lower surface (vacuum container 20a side) and upper surface of the upper lid 30, respectively. That is, when the upper lid 30 is turned upside down, the vacuum processing apparatuses 31 a and 31 b are arranged in the same position in the plasma processing chamber 20. A rotation shaft 32a projects from the center of one side surface of the upper lid 30, and a rotation shaft 32b projects from the center of the other side surface so as to be coaxial with the rotation shaft 32a.

真空処理用機器３１ａおよび３１ｂは、具体的には、プラズマを形成するためのＲＦ電極、材料ガスなどを装置内に導入するためのガス導入口、蒸着物の付着を防止するための防着板などである。真空処理用機器３１ａおよび３１ｂは、同一のものであるが、説明の便宜上、異なる符号を付す。プラズマ処理室２０は、排気系２２とガス導入系２３に配管接続されており、所定のガス圧力下で基板Ｗに対するプラズマ処理、例えば、成膜、エッチング、スパッタリングが行われる。   Specifically, the vacuum processing devices 31a and 31b are composed of an RF electrode for forming plasma, a gas introduction port for introducing a material gas or the like into the apparatus, and an adhesion-preventing plate for preventing adhesion of a deposit. Etc. Although the vacuum processing devices 31a and 31b are the same, different reference numerals are given for convenience of explanation. The plasma processing chamber 20 is connected by piping to an exhaust system 22 and a gas introduction system 23, and plasma processing, for example, film formation, etching, and sputtering is performed on the substrate W under a predetermined gas pressure.

図１および図２に示されるように、上蓋３０は、昇降フレーム６０上に設けられた回転機構５０により表裏反転可能に支持されている。昇降フレーム６０は、その四隅を４つの昇降機構４０によりＺ方向に昇降可能に支持されている。昇降機構４０は、それぞれ、モータ４１と、モータ４１の回転力を直線運動の力に変換するマイタギアボックス４２と、マイタギアボックス４２により昇降運動するネジシャッキ４３とを備えている。回転機構５０は、ウォーム減速機付きモータ５１と、モータ５１の出力軸の回転力により回転する回転軸５２と、上蓋３０の回転軸３２ａを軸支する軸受部５３と、上蓋３０の回転軸３２ｂを軸支する軸受部５４とを備えている。   As shown in FIG. 1 and FIG. 2, the upper lid 30 is supported by a rotating mechanism 50 provided on the elevating frame 60 so that the front and back sides can be reversed. The lifting frame 60 is supported by the four lifting mechanisms 40 so that the four corners can be lifted in the Z direction. Each of the elevating mechanisms 40 includes a motor 41, a miter gear box 42 that converts the rotational force of the motor 41 into a linear motion force, and a screw shank 43 that moves up and down by the miter gear box 42. The rotation mechanism 50 includes a motor 51 with a worm reduction gear, a rotation shaft 52 that rotates by the rotational force of the output shaft of the motor 51, a bearing portion 53 that supports the rotation shaft 32a of the upper lid 30, and a rotation shaft 32b of the upper lid 30. And a bearing portion 54 that pivotally supports the shaft.

回転軸５２は、Ｘ方向と平行な軸線を有し、不図示のカップリングを介して回転軸３２ａに連結されている。回転軸５２が回転すると、回転動作Ｒで示すように、上蓋３０も回転軸５２廻りに回転する。また、ネジシャッキ４３がＺ方向に移動すると、昇降動作Ｍで示すように、上蓋３０もＺ方向に移動する。すなわち、上蓋３０を並進移動させ、真空容器２０ａに対して着脱させることができる。なお、図１においては、昇降動作Ｍを分かり易く説明するために、上蓋３０を真空容器２０ａに密着させた状態と、上蓋３０を真空容器２０ａから離脱させた状態（破線で図示）とを併せて示している。   The rotating shaft 52 has an axis parallel to the X direction, and is connected to the rotating shaft 32a via a coupling (not shown). When the rotating shaft 52 rotates, the upper lid 30 also rotates around the rotating shaft 52 as shown by the rotating operation R. Further, when the screw shank 43 moves in the Z direction, the upper lid 30 also moves in the Z direction as shown by the lifting / lowering operation M. That is, the upper lid 30 can be translated and attached to or removed from the vacuum vessel 20a. In FIG. 1, in order to explain the elevating operation M in an easy-to-understand manner, a state in which the upper lid 30 is in close contact with the vacuum vessel 20 a and a state in which the upper lid 30 is detached from the vacuum vessel 20 a (shown by broken lines) are combined. It shows.

符号ｘ１〜ｘ４は、真空処理装置１００が稼動しているときの基板Ｗの移送動作を表す。動作ｘ１は、ゲートＧ１を基板Ｗが通過する動作、すなわち、搬送ロボット１１により未処理の基板Ｗを装置外部から大気開放されたロード／アンロード室１０へ搬入する動作である。動作ｘ２は、ゲートＧ２を基板Ｗが通過する動作、すなわち、搬送ロボット１１により未処理の基板Ｗをロード／アンロード室１０からプラズマ処理室２０へ搬送する動作である。このとき、ロード／アンロード室１０とプラズマ処理室２０の両方を同程度の真空または減圧雰囲気とする。   Reference numerals x1 to x4 represent transfer operations of the substrate W when the vacuum processing apparatus 100 is operating. The operation x1 is an operation in which the substrate W passes through the gate G1, that is, an operation in which the unprocessed substrate W is carried into the load / unload chamber 10 opened to the atmosphere from the outside of the apparatus by the transfer robot 11. The operation x2 is an operation in which the substrate W passes through the gate G2, that is, an operation in which the unprocessed substrate W is transferred from the load / unload chamber 10 to the plasma processing chamber 20 by the transfer robot 11. At this time, both the load / unload chamber 10 and the plasma processing chamber 20 are set to the same vacuum or reduced pressure atmosphere.

動作ｘ３は、ゲートＧ２を基板Ｗが通過する動作、すなわち、搬送ロボット１１により処理済みの基板Ｗをプラズマ処理室２０からロード／アンロード室１０へ逆搬送する動作である。このときも、ロード／アンロード室１０とプラズマ処理室２０の両方を同程度の真空または減圧雰囲気とする。動作ｘ４は、ゲートＧ１を基板Ｗが通過する動作、すなわち、搬送ロボット１１により処理済みの基板Ｗを大気開放されたロード／アンロード室１０から装置外部へ搬出する動作である。このような一連の動作により、未処理の基板Ｗは、処理済みの基板Ｗとして回収される。   The operation x3 is an operation in which the substrate W passes through the gate G2, that is, an operation in which the substrate W processed by the transfer robot 11 is reversely transferred from the plasma processing chamber 20 to the load / unload chamber 10. At this time, both the load / unload chamber 10 and the plasma processing chamber 20 are set to the same vacuum or reduced pressure atmosphere. The operation x4 is an operation in which the substrate W passes through the gate G1, that is, an operation of unloading the substrate W processed by the transfer robot 11 from the load / unload chamber 10 opened to the atmosphere to the outside of the apparatus. Through such a series of operations, the unprocessed substrate W is recovered as the processed substrate W.

図３を参照しながら、プラズマ処理室２０をメンテナンスする際の上蓋３０の動作について説明する。このメンテナンスには、真空容器２０ａ内部のメンテナンスと上蓋３０の真空処理用機器３１ａ，３１ｂのメンテナンスとが含まれる。図２（ａ）〜（ｅ）の各図は、図１の真空処理装置１００を−Ｘ方向に向かって見た図であり、昇降機構４０や回転機構５０などは図示を省略している。   The operation of the upper lid 30 when maintaining the plasma processing chamber 20 will be described with reference to FIG. This maintenance includes maintenance inside the vacuum vessel 20a and maintenance of the vacuum processing devices 31a and 31b of the upper lid 30. 2A to 2E are views of the vacuum processing apparatus 100 of FIG. 1 as viewed in the −X direction, and the lifting mechanism 40 and the rotating mechanism 50 are not shown.

図３（ａ）では、基板Ｗのプラズマ処理を既に終了して室外に搬出し、室内を大気圧としている。このとき、上蓋３０の下側にプラズマ処理で用いられた真空処理用機器３１ａが位置し、上蓋３０の上側にメンテナンス済みの真空処理用機器３１ｂが位置している。   In FIG. 3A, the plasma treatment of the substrate W has already been completed and carried out of the room, and the room is at atmospheric pressure. At this time, the vacuum processing device 31 a used in the plasma processing is located below the upper lid 30, and the maintained vacuum processing device 31 b is located above the upper lid 30.

図３（ｂ）では、真空容器２０ａに密着していた上蓋３０を昇降機構４０による上昇動作Ｍ１により＋Ｚ方向に並進移動させて真空容器２０ａから離脱させ、開口部Ａを大気開放する。上蓋３０の上昇距離は、次の２つの条件を満足するように設定する。１つは、真空容器２０ａ内のヒータ２１のメンテナンス作業や真空容器２０ａの内壁に付着した蒸着物のクリーニング作業に必要な距離、もう１つは、図３（ｃ）で説明するが、上蓋３０を表裏反転させるのに必要な距離である。   In FIG. 3B, the upper lid 30 that is in close contact with the vacuum vessel 20a is translated in the + Z direction by the ascending operation M1 by the elevating mechanism 40 to be detached from the vacuum vessel 20a, and the opening A is opened to the atmosphere. The rising distance of the upper lid 30 is set so as to satisfy the following two conditions. One is a distance required for the maintenance work of the heater 21 in the vacuum vessel 20a and the cleaning work of the deposit deposited on the inner wall of the vacuum vessel 20a, and the other is the upper lid 30 as will be described with reference to FIG. Is the distance required to reverse the front and back.

図３（ｃ）では、上蓋３０を上昇させて停止させ、回転機構５０による回転動作ＲによりＸ方向に平行な回転軸５２廻りに角度９０°回転させる。すなわち、水平状態にあった上蓋３０を垂直状態とする。前述したように、回転軸５２は、上蓋３０の側面中央に突設されている回転軸３２ａと連結されているので、上蓋３０の上昇距離を上蓋３０のＹ方向の辺の長さの半分以上とれば、上蓋３０の回転動作が可能となる。回転軸５２を上蓋３０の側面中央の回転軸３２ａと連結しているので、重量バランスが良く、上蓋３０をスムーズに回転させることができる。なお、破線で示す上蓋３０は、９０°回転の途中の状態である。   In FIG. 3C, the upper lid 30 is raised and stopped, and rotated by an angle of 90 ° around the rotation axis 52 parallel to the X direction by the rotation operation R by the rotation mechanism 50. That is, the upper lid 30 that has been in the horizontal state is set in the vertical state. As described above, since the rotation shaft 52 is connected to the rotation shaft 32a projecting from the center of the side surface of the upper lid 30, the rising distance of the upper lid 30 is more than half the length of the side of the upper lid 30 in the Y direction. In this case, the upper lid 30 can be rotated. Since the rotating shaft 52 is connected to the rotating shaft 32a at the center of the side surface of the upper lid 30, the weight balance is good and the upper lid 30 can be smoothly rotated. In addition, the upper cover 30 shown with a broken line is in the middle of 90 degree rotation.

図３（ｄ）では、上蓋３０の回転動作Ｒをさらに続け、初期の水平状態から角度１８０°回転させ、上蓋３０の表裏反転動作を終了した後に、上蓋３０を下降動作Ｍ２により−Ｚ方向に並進移動させる。このとき、上蓋３０の下側にメンテナンス済みの真空処理用機器３１ｂが位置し、上蓋３０の上側にプラズマ処理で用いられた真空処理用機器３１ａが位置することになる。真空容器２０ａの内蔵部材（ヒータ２１など）のメンテナンス作業や真空容器２０ａの内壁に付着した蒸着物のクリーニング作業などは、開口部Ａが開放されている図３（ｂ）〜（ｄ）のいずれのタイミングでも行うことができる。   In FIG. 3D, the rotation operation R of the upper lid 30 is further continued, rotated by an angle of 180 ° from the initial horizontal state, and after the upper and lower surface inversion operation of the upper lid 30 is finished, the upper lid 30 is moved in the −Z direction by the lowering operation M2. Translate translation. At this time, the vacuum processing device 31b that has been maintained is positioned below the upper lid 30, and the vacuum processing device 31a used in the plasma processing is positioned above the upper lid 30. The maintenance work for the built-in member (such as the heater 21) of the vacuum container 20a and the cleaning work for the deposited material adhering to the inner wall of the vacuum container 20a are shown in any of FIGS. 3B to 3D in which the opening A is opened. It can also be done at the timing.

図３（ｅ）では、真空容器２０ａ内のメンテナンス作業やクリーニング作業が終了し、上蓋３０を真空容器２０ａに密着させ、真空容器２０ａと上蓋３０とで構成される密閉された室内を大気圧から所定の真空圧力へ排気する。この状態では、上述したように、上蓋３０の下側にメンテナンス済みの真空処理用機器３１ｂが位置しているので、基板Ｗを搬入すると直ちにプラズマ処理を開始することができる。また、プラズマ処理と同時に上蓋３０の上側に位置している真空処理用機器３１ａのメンテナンス作業を行う。このメンテナンスとは、クリーニング、部品交換、部品調整などである。   In FIG. 3 (e), the maintenance operation and the cleaning operation in the vacuum vessel 20a are finished, the upper lid 30 is brought into close contact with the vacuum vessel 20a, and the sealed chamber constituted by the vacuum vessel 20a and the upper lid 30 is removed from the atmospheric pressure. Exhaust to a predetermined vacuum pressure. In this state, as described above, since the vacuum processing equipment 31b that has been maintained is located below the upper lid 30, the plasma processing can be started immediately after the substrate W is loaded. At the same time as the plasma processing, maintenance work is performed on the vacuum processing equipment 31a located above the upper lid 30. This maintenance includes cleaning, parts replacement, parts adjustment, and the like.

本実施の形態による真空処理装置では、平板状の上蓋３０の表裏両面に同一の真空処理用機器３１ａ，３１ｂを表裏対称的に配置し、上蓋３０を真空容器２０ａに対して着脱自在に平行移動させ、上蓋３０をその表面に平行な軸である回転軸３２ａ，３２ｂ廻りに回転させるようにした。従って、次のような作用効果を奏する。   In the vacuum processing apparatus according to the present embodiment, the same vacuum processing devices 31a and 31b are arranged symmetrically on the front and back surfaces of the flat upper lid 30, and the upper lid 30 is detachably translated with respect to the vacuum vessel 20a. The upper lid 30 is rotated around the rotation axes 32a and 32b, which are axes parallel to the surface thereof. Accordingly, the following operational effects can be obtained.

第１に、真空処理用機器３１ｂを用いたプラズマ処理と真空処理用機器３１ａのメンテナンス作業を並行して行うことにより、その時間分だけ早く真空処理に着手することができるので、処理時間、装置停止時間の短縮を図ることができる。第２に、上蓋３０の移動方向は上下であり、真空処理装置の据付面積内で上蓋３０の着脱および回転ができるので、メンテナンス作業のためのスペースは最小限で済む。   First, since the plasma processing using the vacuum processing equipment 31b and the maintenance work of the vacuum processing equipment 31a are performed in parallel, the vacuum processing can be started as much as that time, so that the processing time and apparatus The stop time can be shortened. Secondly, the movement direction of the upper lid 30 is up and down, and the upper lid 30 can be attached and detached and rotated within the installation area of the vacuum processing apparatus, so that the space for maintenance work is minimized.

本発明は、様々な構成の真空処理装置に適用できる。本実施の形態の真空処理装置１００は、ロード／アンロード室１０とプラズマ処理室２０の２つの室が連結された構成であるが、ロード／アンロード室１０を役割ごとに２室に分け、プラズマ処理室２０を挟んで、未処理の基板Ｗを装置内に搬入するロード室と、処理済の基板Ｗを装置外に搬出するアンロード室との２室を備える真空処理装置にも適用できる。また、上蓋３０、昇降機構４０および回転機構５０は、プラズマ処理を行う室のみに限らず、その他の真空処理を行うチャンバにも設置できる。例えば、真空加熱を行うチャンバに設けた場合は、真空処理用機器は、ランプヒータやプレートヒータである。   The present invention can be applied to vacuum processing apparatuses having various configurations. The vacuum processing apparatus 100 of the present embodiment has a configuration in which two chambers, a load / unload chamber 10 and a plasma processing chamber 20, are connected. The load / unload chamber 10 is divided into two chambers for each role, The present invention can also be applied to a vacuum processing apparatus having two chambers, a load chamber for loading an unprocessed substrate W into the apparatus and an unload chamber for unloading the processed substrate W outside the apparatus with the plasma processing chamber 20 interposed therebetween. . Further, the upper lid 30, the elevating mechanism 40, and the rotating mechanism 50 can be installed not only in a chamber for performing plasma processing but also in a chamber for performing other vacuum processing. For example, when provided in a chamber for vacuum heating, the vacuum processing equipment is a lamp heater or a plate heater.

また、昇降機構４０および回転機構５０も本実施の形態に限定されない。プラズマ処理室２０の開口部Ａに対して昇降し、開口部Ａが開放された状態で上蓋３０を回転または表裏反転する機構であれば、種々の形態のものを用いることができる。なお、上蓋３０が蓋部材に対応する。   The lifting mechanism 40 and the rotating mechanism 50 are not limited to the present embodiment. Various types of mechanisms can be used as long as the mechanism moves up and down with respect to the opening A of the plasma processing chamber 20 and rotates or reverses the upper lid 30 with the opening A opened. The upper lid 30 corresponds to the lid member.

本発明の実施の形態に係る真空処理装置の構成を模式的に示す全体構成図である。1 is an overall configuration diagram schematically showing a configuration of a vacuum processing apparatus according to an embodiment of the present invention. 本発明の実施の形態に係る真空処理装置の主要部の外観を模式的に示す斜視図である。It is a perspective view which shows typically the external appearance of the principal part of the vacuum processing apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空処理装置における上蓋の動作を説明する模式図である。It is a schematic diagram explaining operation | movement of the upper cover in the vacuum processing apparatus which concerns on embodiment of this invention.

符号の説明Explanation of symbols

１０：ロード／アンロード室
１１：搬送ロボット
２０：プラズマ処理室
２０ａ：真空容器
２１：ヒータ
３０：上蓋
３１ａ，３１ｂ：真空処理用機器
３２ａ，３２ｂ：回転軸
４０：昇降機構
４１：モータ
４２：マイタギアボックス
４３：ネジシャッキ
５０：回転機構
５１：ウォーム減速機付きモータ
５２：回転軸
５３，５４：軸受部
６０：昇降フレーム
１００：真空処理装置
Ａ：開口部
Ｇ１，Ｇ２：ゲート
Ｍ：昇降動作
Ｒ：回転動作
Ｗ：基板
ｘ１〜ｘ４：移送動作（動作） 10: load / unload chamber 11: transfer robot 20: plasma processing chamber 20a: vacuum vessel 21: heater 30: upper lid 31a, 31b: vacuum processing equipment 32a, 32b: rotating shaft 40: lifting mechanism 41: motor 42: miter Gear box 43: Screw check 50: Rotating mechanism 51: Motor with worm reduction gear 52: Rotating shaft 53, 54: Bearing portion 60: Lifting frame 100: Vacuum processing device A: Opening G1, G2: Gate M: Lifting motion R: Rotation operation W: Substrate x1 to x4: Transfer operation (operation)

Claims (3)

被処理基板を真空処理する真空容器と、
前記真空容器の開口部を開閉する蓋部材と、
前記蓋部材を前記真空容器に対して着脱自在に並進移動させる昇降機構と、
前記蓋部材に連結された回転軸を回転することにより、前記蓋部材の表裏を反転させる回転機構とを備え、
前記蓋部材の表裏両面には、同一の真空処理用機器が表裏対称的に配置されていることを特徴とする真空処理装置。 A vacuum vessel for vacuum processing the substrate to be processed;
A lid member for opening and closing the opening of the vacuum vessel;
An elevating mechanism for detachably translating the lid member with respect to the vacuum vessel;
A rotation mechanism that reverses the front and back of the lid member by rotating a rotation shaft connected to the lid member;
The vacuum processing apparatus is characterized in that the same vacuum processing equipment is symmetrically arranged on both the front and back surfaces of the lid member. 請求項１に記載の真空処理装置において、
前記蓋部材は、矩形平板状であり、
前記回転軸は、前記蓋部材の側面の中心軸心に一致しており、
前記蓋部材の回転角度は、１８０°であることを特徴とする真空処理装置。 The vacuum processing apparatus according to claim 1,
The lid member is a rectangular flat plate,
The rotation axis coincides with the central axis of the side surface of the lid member;
The vacuum processing apparatus according to claim 1, wherein a rotation angle of the lid member is 180 °. 請求項１または２に記載の真空処理装置において、
前記被処理基板を前記真空容器へ投入するとともに、前記被処理基板を前記真空容器から処理済みの基板として回収する、大気開放と真空密閉とを切り換え可能な受け渡し室をさらに備えることを特徴とする真空処理装置。 The vacuum processing apparatus according to claim 1 or 2,
The apparatus further comprises a delivery chamber that is capable of switching between opening to the atmosphere and vacuum-sealing, wherein the substrate to be processed is put into the vacuum container and the substrate to be processed is recovered from the vacuum container as a processed substrate. Vacuum processing equipment.
JP2004315095A 2004-10-29 2004-10-29 Vacuum processing equipment Expired - Fee Related JP4432728B2 (en)

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TW094127686A TWI298910B (en) 2004-10-29 2005-08-15 Vacuum processing equipment
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JP2009181972A (en) * 2008-01-29 2009-08-13 Samco Inc Thin film deposition system
JP2012074480A (en) * 2010-09-28 2012-04-12 Tokyo Electron Ltd Processing device and maintenance method therefor
CN103818861A (en) * 2014-03-12 2014-05-28 合肥彩虹蓝光科技有限公司 Upper cover lifting system of reaction chamber cavity body
JP2015216163A (en) * 2014-05-08 2015-12-03 ワイエイシイ株式会社 Lid opening/closing device and multi-chamber processing system

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