JP2006121115A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform ultrasonic thermo compression bonding surely when a large size semiconductor chip is mounted. <P>SOLUTION: A semiconductor device is provided with a semiconductor chip 1; a circuit board 5 which is arranged to face the semiconductor chip 1 and is electrically connected to the semiconductor chip 1 through a connecting conductor 4; a pad electrode 2 and a terminal electrode 6 which are formed on the respective opposed surfaces of the semiconductor chip 1 and the board 5, and are joined to the connecting conductor 4; a non-conductive resin 7 which is formed so as to be embedded in a gap between the opposed surfaces, and a conductive dummy pattern 10 of predetermined shape which is formed on the opposed surface of the semiconductor chip 1 or the board 5. The temperature distribution between the opposed surfaces can be uniformed, and attenuation of ultrasonic wave can be restrained by uniforming the viscosity and the temperature of the non-conductive resin 7. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a semiconductor device in which a semiconductor chip and a circuit board are joined by ultrasonic thermocompression bonding via a connecting conductor.

  Conventionally, when mounting a surface acoustic wave (SAW) device or the like, a gold (Au) bump is formed on an electrode pad on the device, and the gold bump and the gold plating are applied on a mounting substrate. FCB is performed in which a terminal electrode is thermocompression bonded by applying ultrasonic waves together. The surface acoustic wave device is 3 mm square or less, and the number of I / O electrodes is about several. Accordingly, in this case, only a few bumps are used.

  On the other hand, when applying ultrasonic thermocompression bonding to a large-sized, multi-pin device such as a memory device, it is necessary to inject non-conductive resin between the chip and the mounting substrate to improve reliability. FIG. 10 is a schematic cross-sectional view showing a method of joining a large-sized, multi-pin device and a circuit board in order of steps using ultrasonic thermocompression bonding. First, connection conductors (bumps) 104 are formed on the electrode pads 102 of the semiconductor chip 101 using a wire bonding technique. Then, as shown in FIG. 10A, the semiconductor chip 101 is held by a holding tool, and aligned so that the electrode pad 102 of the semiconductor chip 101 and the terminal electrode 106 of the circuit board 105 correspond to each other.

  Thereafter, a load is applied to the semiconductor chip 101 to bring the connecting conductor 104 and the terminal electrode 106 into close contact with each other, and ultrasonic vibration is applied to the semiconductor chip 101 in this state. Thereby, the connection conductor 104 and the terminal electrode 106 are joined.

  Next, as shown in FIG. 10B, a non-conductive resin 107 is injected between the semiconductor chip 101 and the circuit board 105. FIG. 10C shows a state where the non-conductive resin 107 has spread between the semiconductor chip 101 and the circuit board 105 and the injection has been completed.

  As described above, if the resin is injected before the ultrasonic thermocompression bonding, it is attenuated even if the ultrasonic vibration is applied thereafter. Therefore, the ultrasonic thermocompression bonding is performed after mounting the semiconductor chip 101 as shown in FIG. It is necessary to inject resin after that.

  However, when ultrasonic thermocompression bonding is performed on a large, multi-pin memory device, the area of the semiconductor chip 101 is large, so that the non-conductive resin 107 cannot flow through the central portion of the semiconductor chip 101, and a void is formed at the central portion. There is a problem that is formed. For this reason, as shown in FIG. 10, it was difficult to perform resin sealing after pressure bonding. In addition, there is a problem that the process becomes complicated when resin sealing is performed after pressure bonding.

  From such a point of view, a method is adopted in which a non-conductive resin is formed in advance on a circuit board and resin sealing is performed at the same time as the connection conductor 104 and the terminal electrode 106 are joined by ultrasonic thermocompression bonding. It's getting on. According to this method, the resin injection step after ultrasonic thermocompression bonding can be omitted.

  However, when this method is applied, the resin viscosity at the time of joining becomes important. In other words, the nonconductive resin melts and the gap between the semiconductor chip and the circuit board is sealed during ultrasonic thermocompression bonding, but the viscosity of the nonconductive resin varies from region to region. Attenuates and the bonding becomes insufficient.

  There is a difference between the temperature of the semiconductor chip and the temperature of the circuit board before the semiconductor chip comes into contact with the circuit board, that is, before the semiconductor chip comes into contact with the nonconductive resin on the circuit board. For this reason, after the semiconductor chip 1 contacts the nonconductive resin, the temperature of the nonconductive resin does not become uniform. Further, since the semiconductor chip and the circuit board have different thermal conductivities and different constituent members depending on locations, a temperature distribution is generated in the non-conductive resin 7.

  In particular, when a glass epoxy board using an epoxy resin, which is a non-conductive resin, is used as a circuit board, the terminal electrodes are made of a conductive material, and the other areas are made of a non-conductive material, so the difference in heat capacity, etc. Therefore, the temperature differs between the vicinity of the terminal electrode and the surrounding area, and the viscosity distribution of the nonconductive resin varies due to the difference in temperature distribution. And in the high viscosity region, the ultrasonic vibration is difficult to be transmitted due to the drag of the non-conductive resin, so the applied ultrasonic vibration is attenuated due to the influence of the high viscosity region, and the connection conductor and the terminal electrode There has been a problem that the bondability deteriorates.

  In addition, since the glass epoxy substrate is made of a material having a relatively low thermal conductivity compared to a metal or the like, the temperature distribution varies significantly between the center and the peripheral plane direction (horizontal direction) of the semiconductor chip 1. As a result, the applied ultrasonic vibration and load are affected by the drag of the portion where the temperature is low and the non-conductive resin is high in viscosity.

  The present invention has been made to solve the above-described problems, and aims to improve the reliability of a semiconductor device by reliably performing ultrasonic thermocompression bonding when mounting a large-sized semiconductor chip. To do.

  The method of manufacturing a semiconductor device according to the present invention includes a step of preparing a semiconductor chip including an electrode, a circuit using a glass epoxy substrate, and an electrode and a conductive dummy pattern having a thermal conductivity higher than that of the glass epoxy substrate. A step of preparing a substrate, the semiconductor chip is disposed on the conductive dummy pattern, and a non-conductive resin is interposed between the semiconductor chip and the conductive dummy pattern. A step of joining the electrode of the semiconductor chip and the electrode of the circuit board through a connecting conductor by thermocompression bonding.

  Further, the semiconductor chip and the electrode of the circuit board are formed at positions along the peripheral edge of the semiconductor chip, and the conductive dummy pattern is formed in a range surrounded by the electrodes.

  The conductive dummy pattern is a lattice pattern.

  Further, the conductive dummy pattern is delimited by a space extending radially from a position corresponding to the vicinity of the center of the semiconductor chip.

  The conductive dummy pattern and the electrode are made of the same material.

  The conductive dummy pattern is formed on the circuit board via a protective insulating film.

  Further, a thermal via is formed on the circuit board, and the conductive dummy pattern is connected to the back side of the circuit board via the thermal via.

  The connecting conductor uses a member whose main element is gold.

  The outermost layer of the electrode of the circuit board is composed of a gold plating film.

  Further, the connection conductor and the electrode of the circuit board are bonded via an Au / Au bonding layer by the ultrasonic thermocompression bonding.

  According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device comprising: a step of preparing a semiconductor chip including an electrode; and a circuit board using a silicon chip and including an electrode and a conductive dummy pattern having a higher thermal conductivity than the silicon chip. A step of preparing, ultrasonic thermocompression bonding in a state where the semiconductor chip is disposed on the conductive dummy pattern and a nonconductive resin is interposed between the semiconductor chip and the conductive dummy pattern. And a step of joining the electrode of the semiconductor chip and the electrode of the circuit board through a connecting conductor.

  Further, the semiconductor chip and the electrode of the circuit board are formed at positions along the peripheral edge of the semiconductor chip, and the conductive dummy pattern is formed in a range surrounded by the electrodes.

  The conductive dummy pattern is a lattice pattern.

  Further, the conductive dummy pattern is delimited by a space extending radially from a position corresponding to the vicinity of the center of the semiconductor chip.

  The conductive dummy pattern and the electrode are made of the same material.

  The conductive dummy pattern is formed on the circuit board via a protective insulating film.

  Further, a thermal via is formed on the circuit board, and the conductive dummy pattern is connected to the back side of the circuit board via the thermal via.

  The connecting conductor uses a member whose main element is gold.

  The outermost layer of the electrode of the circuit board is composed of a gold plating film.

  Further, the connection conductor and the electrode of the circuit board are bonded via an Au / Au bonding layer by the ultrasonic thermocompression bonding.

  Since the present invention is configured as described above, the following effects can be obtained.

  Since the conductive dummy pattern of a predetermined shape is formed on the circuit board, the temperature distribution between the opposing surfaces can be made uniform when the semiconductor chip and the circuit board are subjected to ultrasonic thermocompression bonding, and the viscosity of the nonconductive resin is made uniform. Can be realized. Thereby, it can suppress that the applied ultrasonic wave attenuate | damps and it becomes possible to improve the reliability of the electrical connection of a semiconductor chip and an electronic component.

  By disposing the conductive dummy pattern so as to be surrounded by the electrodes formed on the periphery of the semiconductor chip, the temperature of the central part of the semiconductor chip can be increased to the same as that of the peripheral part during ultrasonic thermocompression bonding. It becomes possible to increase the viscosity of the non-conductive resin at the center of the chip.

  By making the conductive dummy pattern into a lattice pattern, a wide contact area between the conductive dummy pattern and the semiconductor chip or the electronic component can be secured, and the adhesiveness of the conductive dummy pattern can be improved. .

  By separating the conductive dummy pattern by a space extending radially from the center of the semiconductor chip, it is possible to discharge voids generated in the non-conductive resin to the outside along the space during thermocompression bonding.

  By making the material of the conductive dummy pattern and the electrode the same, both can be formed in the same process on the semiconductor chip or the electronic component. Thereby, a process can be simplified and cost can be reduced.

  By using the electronic member as a circuit board having a predetermined circuit pattern, it is possible to improve the reliability of electrical connection between the semiconductor chip and the circuit board in a package such as a CSP.

  When the electronic member is a semiconductor chip, it is possible to improve the reliability of electrical connection between the semiconductor chips.

  By forming electrodes on the opposing surface of the semiconductor chip or electronic component via a protective insulating film, the temperature distribution between the opposing surfaces can be made uniform when ultrasonic bonding is performed between the semiconductor chip and the electronic component. The temperature of the nonconductive resin can be made uniform.

  By connecting the conductive dummy pattern to the back side of the opposing surface via the thermal via, heat from the back side of the opposing surface can be efficiently transferred to the conductive dummy pattern on the opposing surface.

Embodiment 1 FIG.
FIG. 1 is a schematic cross-sectional view showing a method of manufacturing a semiconductor device using ultrasonic thermocompression bonding according to the first embodiment of the present invention in the order of steps. Hereinafter, the procedure of ultrasonic thermocompression bonding according to the first embodiment will be described with reference to FIG.

  First, as shown in FIG. 1A, a connection conductor 4 is formed on an electrode pad 2 on a semiconductor chip 1 by using a wire bonding technique. An insulating protective film 3 is formed in a region on the semiconductor chip 1 where the electrode pad 2 is not formed.

  Next, as shown in FIG. 1B, a non-conductive resin 7 is formed on the circuit board 5 provided with the terminal electrodes 6. The non-conductive resin 7 is formed using a method such as affixing a sheet-like resin or a coating method.

  Next, as shown in FIG. 1C, the circuit board 5 is placed on the holding tool 8, the semiconductor chip 1 is held by the holding tool 9, the two are opposed to each other, and the electrode pad 2 of the semiconductor chip 1 and the circuit board 5 so that the terminal electrodes 6 correspond to each other.

  Next, as shown in FIG. 1D, the semiconductor chip 1 and the circuit board 5 are pressure-bonded, and ultrasonic vibration and a load are applied while heating to connect the electrode pad 2 and the terminal electrode 6 to the connecting conductor 4. Connect through. Thereby, as shown in FIG. 1E, the semiconductor chip 1 is mounted on the circuit board 5, and the non-conductive resin 7 is sealed between the circuit board 5 and the semiconductor chip 1.

  In the process of FIG. 1D, the non-conductive resin 7 previously set on the circuit board 5 is melted and softened by heating for thermocompression bonding, but the viscosity of the non-conductive resin 7 depends on the temperature. . In general, the larger the semiconductor chip 1 is, the wider the viscosity distribution of the non-conductive resin 7 is. In the first embodiment, the dummy pattern 10 having good thermal conductivity is formed on the surface of the circuit board 5 so that the temperature distribution and the viscosity distribution can be made uniform even with a large chip size.

  FIG. 2 is a schematic diagram showing the dummy pattern 10 formed on the circuit board 5. Here, FIG. 2A is a plan view showing the surface of the circuit board 5 on which the terminal electrodes 6 are formed. FIG. 2B shows a cross section of the circuit board 5 and the semiconductor chip 1.

  As shown in FIG. 2A, a plurality of terminal electrodes 6 are formed on the periphery of the circuit board 5. A dummy pattern 10 is formed at the center of the circuit board 5 so as to be surrounded by the terminal electrodes 6. The dummy pattern 10 is formed of the same material as that of the terminal electrode 6 and has a thickness equivalent to that of the terminal electrode 6 as shown in FIG. The dummy pattern 10 can be formed in the same process as the terminal electrode 6.

  In this way, by providing the dummy pattern 10 with good thermal conductivity made of the same material as the terminal electrode 6 at the center of the surface of the circuit board 5, the circuit board can be heated when heated in the process of FIG. The temperature distribution over 5 can be made uniform. When the dummy pattern 10 is not formed, heat is not sufficiently transmitted to the central part of the circuit board 5, so that the temperature at the central part of the circuit board 5 is lower than that at the peripheral part and the viscosity at the central part is high. However, by providing the dummy pattern 10, the temperature of the central portion of the circuit board 5 can be made equal to that of the peripheral portion. Thereby, it becomes possible to make temperature uniform throughout the circuit board 5, and the temperature distribution of the nonelectroconductive resin 7 can be made uniform. The temperature difference for each position in the horizontal direction of the nonconductive resin 7 can be reduced.

  Then, by making the temperature distribution of the nonconductive resin 7 uniform, the viscosity distribution of the nonconductive resin 7 can be made uniform. In other words, by providing the dummy pattern 10, the viscosity of the non-conductive resin 7 in the central portion of the circuit board 5 can be lowered to be equal to the surroundings. Thereby, it can suppress that the viscosity of the nonelectroconductive resin 7 becomes high, and can suppress that an ultrasonic vibration attenuate | damps.

  FIG. 3 is a plan view showing an example of the shape of the dummy pattern 10. The organic material portion is exposed in a region where the terminal electrode 6 is not formed on the surface of the circuit board 5. As shown in FIG. 3, by making the dummy pattern 10 into a lattice shape, a wide contact area between the organic material portion of the circuit board 5 and the non-conductive resin 7 can be secured. Thereby, the adhesive strength between the non-conductive resin 7 and the circuit board 5 can be improved.

  FIG. 4A is a plan view showing another example of the shape of the dummy pattern 10. As shown in FIG. 4, when the non-conductive resin 7 is formed by providing a radial space on the circuit board 5 and dividing the dummy pattern 10, or when the semiconductor chip 1 is thermocompression-bonded, The voids generated in the above can be discharged to the outside along the radial space. Here, by placing the center of the space of the dummy pattern 10 formed radially in the vicinity of the center of the semiconductor chip 1, voids can be efficiently discharged from the center of the semiconductor chip 1 to the outside. Thereby, the void which generate | occur | produces in the nonelectroconductive resin 7 can be suppressed to the minimum.

  FIG. 4B is a schematic cross-sectional view showing a semiconductor device provided with the dummy pattern 10 of FIG. In the example of FIG. 4B, the dummy pattern 10 of the circuit board 5 is covered with an insulating protective film 13. Since the insulating protective film 13 is made of an organic non-conductive resin and the non-conductive resin 7 is also made of an organic material, the temperature distribution on the circuit board 5 is uniform as in the case of FIGS. In addition, the surface of the circuit board 5 can be protected even when the circuit board 5 is in a single state.

  Further, as described above, the dummy pattern 10 may be formed in the same process as the terminal electrode 6 of the circuit board 5 or may be formed by a method such as attaching a metal plate in a process different from the terminal electrode 6. Good.

  Further, when a semiconductor chip such as silicon (Si) is used as the circuit board 5, that is, the surface of the two semiconductor chips 1 on the electrode pad 2 side is opposed to each other, and a non-conductive resin 7 is interposed to connect the connection conductor 3. Even in the case of joining by the above, the same effect can be obtained by forming a dummy pattern. In this case, the dummy pattern is formed on the surface of the semiconductor chip 1 on the electrode pad 2 side. The dummy pattern may be made of a film made of the same material as that of the electrode pad 2 or may be made of a metal pattern having good thermal conductivity such as copper (Cu). Thereby, the temperature of the nonconductive resin 7 between the semiconductor chips 1 can be made uniform.

  Next, connection members such as the electrode pad 2, the connection conductor 4, and the terminal electrode 6 will be described with reference to FIG. FIG. 5 is a schematic cross-sectional view showing a joint portion between the semiconductor chip 1 and the circuit board 5. These connecting members are gold (Au), solder, silver (Ag), copper (Cu), aluminum (Al), bismuth (Bi), zinc (Zn), antimony (Sb), indium (In), lead (Pb), silicon (Si), or an alloy thereof.

  In FIG. 5A, a member having gold (Au) as a main element is used as the connection conductor 4, and the terminal electrode 6 on the circuit board 5 (glass epoxy board) is used as the copper (Cu) electrode 13 and the copper electrode 13. An example is shown in which a nickel (Ni) plating layer 16 formed above and a gold (Au) plating layer 17 formed on the outermost layer are formed. The connecting conductor 4 is bonded to the electrode pad 2 in advance using a wire bonding technique, and an Au / Al alloy layer 18 is formed at the interface between the connecting conductor 4 and the electrode pad 2.

  As shown in FIG. 5A, an Au / Au bonding layer 19 is formed at a relatively low temperature by ultrasonic thermocompression bonding at the interface between the connecting conductor 4 and the gold plating layer 17.

  As described above, according to the method of the first embodiment, even the large-sized, multi-pin semiconductor chip 1 can be surely subjected to ultrasonic thermocompression bonding, so that the interface between the connection conductor 4 and the gold plating layer 17 is provided. The Au / Au bonding layer 19 can be reliably formed. Therefore, the connection conductor 4 and the terminal electrode 6 can be reliably joined.

  FIG. 5B shows a case where a member having gold (Au) as a main element is used as the connecting conductor 4 and the circuit board 5 is replaced with a semiconductor chip, that is, the semiconductor chips 1 are joined to each other. ing. In this case, even if the terminal electrode 6 is a pad made of aluminum, the Au / Al bonding layer 20 can be formed at the interface between the terminal electrode 6 and the connecting conductor 4 at a relatively low temperature. As described above, according to the method of the first embodiment, since thermocompression bonding using ultrasonic waves can be reliably performed, a material having a low heat-resistant temperature such as a nonconductive resin 7 such as an organic resin is used. Even so, the favorable Au / Au bonding layer 19 and Au / Al bonding layer 20 can be formed. Therefore, the reliability of joining can be improved significantly.

  As described above, according to the first embodiment, since the dummy pattern 10 having a predetermined shape is formed on the surface of the circuit board 5 on the terminal electrode 5 side, the temperature distribution on the upper surface of the circuit board 5 can be made uniform. It becomes possible to make the temperature of the conductive resin 7 uniform. Thereby, the viscosity of the non-conductive resin 7 at the time of ultrasonic thermocompression bonding can be kept constant, and in particular, it can be prevented that a high-viscosity region is generated in the center of the semiconductor chip 1, and the viscosity is high. Accordingly, the applied ultrasonic vibration can be prevented from being attenuated. Therefore, the terminal electrode 6 and the connection conductor 4 can be reliably joined, and the reliability of the semiconductor device can be improved.

Embodiment 2. FIG.
FIG. 6 is a schematic sectional view showing a semiconductor device according to the second embodiment of the present invention. As shown in FIG. 6, the semiconductor device of the second embodiment is formed by joining a non-conductive resin 7 between the semiconductor chip 1 and the circuit board 5 in the same manner as the semiconductor device of the first embodiment. In addition, a dummy pattern 14 having good thermal conductivity is also formed on the semiconductor chip 1 side.

  Thus, the uniformity of the temperature distribution of the non-conductive resin 7 can be improved by forming the dummy pattern 14 having good thermal conductivity on the semiconductor chip 1 side. Therefore, attenuation of ultrasonic vibration can be suppressed, and ultrasonic thermocompression bonding can be reliably performed.

  7 and 8 are schematic cross-sectional views showing another example of the semiconductor device provided with the dummy pattern 14. Here, FIG. 7 shows that the dummy pattern 14 is formed on the surface of the semiconductor chip 1 on the electrode pad 2 side as in the case of FIG. 6, but the dummy pattern 14 is formed on the insulating protective film 3. This is different from the case of FIG.

  Both the non-conductive resin 7 and the insulating protective film 3 are insulating films made of an organic material. Even when the dummy pattern 14 is formed on the protective insulating film 3 as shown in FIG. 7, the temperature distribution of the non-conductive resin 7 can be made uniform as in the case of FIG.

  FIG. 8 shows a case where a solder resist 15 is provided on a glass epoxy substrate as the circuit board 5. Since the solder resist 15 is also made of an organic film, even when the solder resist 15 is interposed between the circuit board 5 and the non-conductive resin 7, the thermal conductivity of the circuit board 5 is greatly changed. Absent. In the example of FIG. 8, the dummy pattern 14 is formed on the surface of the semiconductor chip 1 and the dummy pattern 14 is covered with the insulating protective film 2 as in the case of FIG. 6. Therefore, similarly to the example of FIG. 6, the temperature of the non-conductive resin 7 can be made uniform, and the function of the solder resist 15 can also be obtained.

  As in the case of FIG. 3, the adhesion of the dummy pattern 14 to the semiconductor chip 1, the insulating protective film 3, or the insulating protective film 13 can be improved by making the dummy pattern 14 have a lattice shape. Similarly to the case of FIG. 4, by separating the dummy pattern 14 by a radial space, it is possible to efficiently discharge voids generated in the nonconductive resin 7 during ultrasonic thermocompression bonding.

Embodiment 3 FIG.
FIG. 9 is a schematic cross-sectional view showing a semiconductor device using thermocompression bonding according to the third embodiment. In the third embodiment, the dummy pattern 10 is formed on the circuit board 5 as in the first embodiment, and the thermal via 11 is further provided on the circuit board 5 so that the heat to the circuit board 5 is easily transmitted to the dummy pattern 10. It is a thing.

  As shown in FIG. 9, the thermal via 11 provided on the circuit board 5 below the dummy pattern 10 is formed so as to penetrate the circuit board 5, and a part of the dummy pattern 10 is filled in the thermal via 11. ing. This is particularly effective when heating at the time of ultrasonic thermocompression bonding is performed from the back surface side of the circuit board 5, and by providing the thermal via 11, the central portion of the circuit board 5 from the back side of the circuit board 5 is provided. The dummy pattern 10 can be heated. Thereby, the temperature of the nonconductive resin 7 can be raised at the center of the circuit board 5 to reduce the viscosity, and the temperature of the nonconductive resin 7 can be made uniform.

  Further, when heating is performed from the back surface side of the semiconductor chip 1, that is, from above the semiconductor chip 1 in FIG. 9, a thermal via may be provided in the semiconductor chip 1. Thereby, the surface of the semiconductor chip 1 on the electrode pad 2 side can be heated via the thermal via, and the viscosity of the non-conductive resin 7 can be lowered. Thereby, it can suppress that an ultrasonic wave attenuate | damps and it becomes possible to improve the reliability of joining.

  As described above, according to the third embodiment, by providing the thermal via 11 on the circuit board 5 or the semiconductor chip 1, the non-conductive resin 7 can be heated via the thermal via 11. Therefore, the temperature distribution of the non-conductive resin 7 can be made uniform, and highly reliable ultrasonic thermocompression bonding can be performed.

It is a schematic sectional drawing which shows the manufacturing method of the semiconductor device using ultrasonic thermocompression bonding concerning Embodiment 1 of this invention in order of a process. It is a schematic diagram which shows the dummy pattern formed on the circuit board. It is a top view which shows the example of the shape of a dummy pattern. It is a top view which shows the other example of the shape of a dummy pattern. It is a schematic sectional drawing which shows the junction part of a semiconductor chip and a circuit board. It is a schematic sectional drawing which shows the semiconductor device concerning Embodiment 2 of this invention. It is a schematic sectional drawing which shows the example which provided the dummy pattern in the uppermost surface of the semiconductor chip. It is a schematic sectional drawing which shows the example which provided the soldering resist on the circuit board. FIG. 5 is a schematic cross-sectional view showing a semiconductor device using thermocompression bonding according to a third embodiment. It is a schematic sectional drawing which shows the manufacturing method of the semiconductor device using the conventional ultrasonic thermocompression bonding.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Semiconductor chip, 2 Electrode pad, 3 Insulation protective film, 4 Connection conductor, 5 Circuit board, 6 Terminal electrode, 7 Nonelectroconductive resin, 8, 9 Holding tool, 10, 14 Dummy pattern, 11 Thermal via, 13 Copper Electrode, 15 solder resist, 16 nickel (Ni) plating layer, 17 gold (Au) plating layer, 18 Au / Al alloy layer, 19 Au / Au bonding layer, 20 Au / Al bonding layer.

Claims (20)

Preparing a semiconductor chip comprising an electrode;
Using a glass epoxy substrate, preparing a circuit board comprising an electrode and a conductive dummy pattern having a higher thermal conductivity than the glass epoxy substrate;
The semiconductor chip is disposed on the conductive dummy pattern, and the semiconductor chip is subjected to ultrasonic thermocompression bonding with a nonconductive resin interposed between the semiconductor chip and the conductive dummy pattern. And a step of joining the electrode of the circuit board to the electrode of the circuit board via a connecting conductor.   The electrode of the semiconductor chip and the circuit board is formed at a position along a peripheral portion of the semiconductor chip, and the conductive dummy pattern is formed in a range surrounded by the electrode. 2. A method of manufacturing a semiconductor device according to 1.   3. The method of manufacturing a semiconductor device according to claim 1, wherein the conductive dummy pattern is a lattice pattern.   3. The method of manufacturing a semiconductor device according to claim 1, wherein the conductive dummy pattern is partitioned by a space extending radially from a position corresponding to the vicinity of the center of the semiconductor chip.   The method for manufacturing a semiconductor device according to claim 1, wherein the conductive dummy pattern and the electrode are made of the same material.   The method of manufacturing a semiconductor device according to claim 1, wherein the conductive dummy pattern is formed on the circuit board via a protective insulating film.   The semiconductor device according to claim 1, wherein a thermal via is formed in the circuit board, and the conductive dummy pattern is connected to a back side of the circuit board through the thermal via. Manufacturing method.   The method for manufacturing a semiconductor device according to claim 1, wherein the connection conductor uses a member whose main element is gold.   The method for manufacturing a semiconductor device according to claim 1, wherein an outermost layer of an electrode of the circuit board is formed of a gold plating film.   10. The manufacturing method of a semiconductor device according to claim 1, wherein the connection conductor and the electrode of the circuit board are bonded via an Au / Au bonding layer by the ultrasonic thermocompression bonding. Method. Preparing a semiconductor chip comprising an electrode;
Using a silicon chip, preparing a circuit board comprising an electrode and a conductive dummy pattern having a higher thermal conductivity than the silicon chip;
The semiconductor chip is disposed on the conductive dummy pattern, and the semiconductor chip is subjected to ultrasonic thermocompression bonding with a nonconductive resin interposed between the semiconductor chip and the conductive dummy pattern. And a step of joining the electrode of the circuit board to the electrode of the circuit board via a connecting conductor.   The electrode of the semiconductor chip and the circuit board is formed at a position along a peripheral portion of the semiconductor chip, and the conductive dummy pattern is formed in a range surrounded by the electrode. 11. A method for manufacturing a semiconductor device according to 11.   13. The method of manufacturing a semiconductor device according to claim 11, wherein the conductive dummy pattern is a lattice pattern.   13. The method of manufacturing a semiconductor device according to claim 11, wherein the conductive dummy pattern is partitioned by a space extending radially from a position corresponding to the vicinity of the center of the semiconductor chip.   The method for manufacturing a semiconductor device according to claim 11, wherein the conductive dummy pattern and the electrode are made of the same material.   The method of manufacturing a semiconductor device according to claim 11, wherein the conductive dummy pattern is formed on the circuit board via a protective insulating film.   The semiconductor device according to claim 11, wherein a thermal via is formed on the circuit board, and the conductive dummy pattern is connected to a back side of the circuit board via the thermal via. Manufacturing method.   The method for manufacturing a semiconductor device according to claim 11, wherein the connection conductor uses a member whose main element is gold.   The method for manufacturing a semiconductor device according to claim 11, wherein an outermost layer of an electrode of the circuit board is formed of a gold plating film.   The semiconductor device according to claim 11, wherein the connection conductor and the electrode of the circuit board are bonded via an Au / Au bonding layer by the ultrasonic thermocompression bonding. Method.

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