JP2006120915A - Closure material - Google Patents

Closure material Download PDF

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JP2006120915A
JP2006120915A JP2004308180A JP2004308180A JP2006120915A JP 2006120915 A JP2006120915 A JP 2006120915A JP 2004308180 A JP2004308180 A JP 2004308180A JP 2004308180 A JP2004308180 A JP 2004308180A JP 2006120915 A JP2006120915 A JP 2006120915A
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layer
alloy
sealing
substrate
kovar
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JP4636849B2 (en
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Osamu Watanabe
治 渡辺
Michihiko Nishijima
道彦 西島
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Tokuriki Honten Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

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  • Lead Frames For Integrated Circuits (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that although in the sealing technique by a closure material of an electronic-component protecting package as the closure material, an Ni layer for preventing an Au layer from diffusing excessively into a substrate has been interposed conventionally between such a low expansion coefficient material as a kovar material and a 42-alloy material to be the substrate and the Au layer, the Au layer has been diffused and lost due to its thinness by the heating performed when sealing the electronic-component protecting package by the closure material, and a very friable layer has been generated by the diffusing reaction on the Ni layer of Sn contained in an Au-Sn alloy or Sn contained in such a multilayer comprising the Au layer and an Sn layer as to become a predetermined composition, and as a result, any complete closure state has not been obtained due to the generation of the very friable layer. <P>SOLUTION: A Cu layer or a Cu-alloy layer having a thickness of 0.05-20 μm is so formed on the single side of such a substrate having a low expansion coefficient as a kovar material and a 42-alloy material as to form a sealing layer made of an Au-Sn alloy on the surface of the Cu layer or the Cu-alloy layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、電子部品保護パッケージ等のシール用封止材料に関する。   The present invention relates to a sealing material for sealing, such as an electronic component protection package.

従来、電子機器に使用される水晶発振素子やＳＡＷフィルタ素子は、図８および図９に示す如く、電子部品保護パッケージであるセラミックスパッケージ１０１内に封入されており、その封入に際して封止板１０２は低膨張係数を有したコバール材、４２アロイ材等の合金板が封止材料１０４として使用され、封着材料１０３としてＡｕ−Ｓｎ合金が多用されている。   Conventionally, crystal oscillation elements and SAW filter elements used in electronic devices are enclosed in a ceramic package 101, which is an electronic component protection package, as shown in FIGS. An alloy plate such as Kovar material or 42 alloy material having a low expansion coefficient is used as the sealing material 104, and Au—Sn alloy is frequently used as the sealing material 103.

封止材料であるコバール材、４２アロイ材等の基板は、所定の形状片に加工後、Ｎｉメッキ加工を施し、さらにＡｕメッキを施して封止材料として構成し、封着材料としてＡｕ−Ｓｎ合金板片を電子部品保護パッケージのシール用の封止材料との間に挿入し、加熱溶融して封着させている（例えば、特許文献１参照）。
また、前記封着材料としてＡｕ−Ｓｎ部を前記Ｎｉメッキ、Ａｕメッキ加工を施し、封止材料の封着面に所定のＡｕ−Ｓｎ組成になるようにＡｕメッキ、Ｓｎメッキからなる多層メッキ加工により構成した封止材料を電子部品保護パッケージ上に加熱溶融して封着させている（例えば、特許文献２参照）。
特開２０００−３１３１３号公報 特開２００２−９１８６号公報 Substrates such as Kovar material and 42 alloy material, which are sealing materials, are processed into a predetermined shape piece, Ni-plated, and further Au plated to form a sealing material, and Au-Sn as a sealing material The alloy plate piece is inserted between the sealing material for sealing the electronic component protection package, and is heated and melted for sealing (for example, see Patent Document 1).
Further, the Au—Sn portion is subjected to the Ni plating and Au plating processes as the sealing material, and the multilayer plating process including Au plating and Sn plating is performed so that the sealing surface of the sealing material has a predetermined Au—Sn composition. The sealing material constituted by the above is heated and melted and sealed on the electronic component protection package (see, for example, Patent Document 2).
JP 2000-31313 A JP 2002-9186 A

しかしながら、上述した従来のセラミックスパッケージと封止材料との封着の技術において、その封止材料には基板となるコバール材、４２アロイ材等の低膨張係数を有した材料と、Ａｕ層との間にＮｉ層が基板へのＡｕ層の過多拡散防止用として設けられている。
しかしながら、そのＡｕ層が薄いためにセラミックスパッケージと封止材料との封着時の加熱により、Ａｕ層が拡散消滅し、Ａｕ−Ｓｎ合金中のＳｎもしくは所定のＡｕ−Ｓｎ組成になるようにＡｕ層およびＳｎ層を多段に積層した層中のＳｎとＮｉ層との拡散反応により、非常に脆い層が生成されることを見出した。 However, in the above-described sealing technique between the conventional ceramic package and the sealing material, the sealing material includes a material having a low expansion coefficient such as a Kovar material or a 42 alloy material as a substrate, and an Au layer. A Ni layer is provided between them to prevent excessive diffusion of the Au layer to the substrate.
However, since the Au layer is thin, the Au layer is diffused and extinguished by heating at the time of sealing the ceramic package and the sealing material, so that the Au in the Au—Sn alloy or the predetermined Au—Sn composition is obtained. It has been found that a very fragile layer is generated by the diffusion reaction of Sn and the Ni layer in the layer in which the layers and the Sn layer are laminated in multiple stages.

この非常に脆い層の生成により完全な封止状態が得られないという問題がある。
また、電子回路基板上への実装において、封止状態が破壊され、素子としての機能が損なわれてしまうという問題がある。
本発明は、上記の問題点を解決するためになされたもので、基板に脆い層の生成をなくし、Ａｕ−Ｓｎ部の十分な溶融、拡がりが得られる封止材料を提供することを目的とする。 There is a problem that a completely sealed state cannot be obtained due to the generation of this very brittle layer.
Moreover, in mounting on an electronic circuit board, there exists a problem that a sealing state will be destroyed and the function as an element will be impaired.
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a sealing material that eliminates the formation of a fragile layer on a substrate and can sufficiently melt and spread the Au-Sn portion. To do.

本発明は、このようなコバール材、４２アロイ材等の低膨張係数を有する封止材料によってセラミックスパッケージ等の電子部品保護パッケージを封着材を介して封着する封止材料において、コバール材、４２アロイ材等の低膨張係数を有する基板の片面に、厚さ０．０５〜２０μｍのＣｕ層もしくはＣｕ合金層を形成し、そのＣｕ層もしくはＣｕ合金層面に７５〜８５ｗｔ％Ａｕ−Ｓｎ合金からなる封着層を形成したことを特徴とする。   The present invention provides a sealing material for sealing an electronic component protection package such as a ceramic package with a sealing material having a low expansion coefficient such as a Kovar material, 42 alloy material, etc. A Cu layer or Cu alloy layer having a thickness of 0.05 to 20 μm is formed on one surface of a substrate having a low expansion coefficient such as 42 alloy material, and 75 to 85 wt% Au—Sn alloy is formed on the Cu layer or Cu alloy layer surface. A sealing layer is formed.

さらに、コバール材、４２アロイ材等の低膨張係数を有する基板の片面に、厚さ０．０５〜２０μｍのＣｕ層もしくはＣｕ合金層とさらにＡｕ層を形成し、そのＡｕ層面に７５〜８５ｗｔ％Ａｕ−Ｓｎ合金からなる封着層を形成したことを特徴とする。
さらに、低膨張係数を有するコバール材、４２アロイ材等の基板の片面に、厚さ０．０５〜２０μｍのＣｕ層もしくはＣｕ合金層を形成し、さらに、封着材料としての７５〜８５ｗｔ％Ａｕ−Ｓｎ合金からなる層もしくは７５〜８５ｗｔ％Ａｕ−Ｓｎ組成になるようにＡｕ層およびＳｎ層を多段に積層させた層を形成することを特徴とする。 Furthermore, a Cu layer or Cu alloy layer having a thickness of 0.05 to 20 μm and an Au layer are further formed on one surface of a substrate having a low expansion coefficient such as Kovar material or 42 alloy material, and 75 to 85 wt% on the Au layer surface. A sealing layer made of an Au—Sn alloy is formed.
Further, a Cu layer or a Cu alloy layer having a thickness of 0.05 to 20 μm is formed on one surface of a substrate such as Kovar material or 42 alloy material having a low expansion coefficient, and 75 to 85 wt% Au as a sealing material. It is characterized in that a layer made of a Sn alloy or a layer in which an Au layer and a Sn layer are laminated in multiple stages so as to have a composition of 75 to 85 wt% Au—Sn is characterized.

このように構成することにより、脆い層の生成がなく、Ａｕ−Ｓｎ部の十分な溶融、拡がりが得られ、完全な封止状態が得られることがわかった。
７５〜８５ｗｔ％Ａｕ−Ｓｎ合金からなる層は、７５〜８５ｗｔ％Ａｕ−Ｓｎ組成のＡｕ−Ｓｎペースト印刷の焼成によるものでもよく、７５〜８５ｗｔ％Ａｕ−Ｓｎ組成になるようにＡｕ層およびＳｎ層を多段に積層させた層は、７５〜８５ｗｔ％Ａｕ−Ｓｎ組成の多層メッキによるものでもよい。 With this configuration, it was found that a brittle layer was not generated, the Au—Sn portion was sufficiently melted and expanded, and a complete sealed state was obtained.
The layer made of 75 to 85 wt% Au—Sn alloy may be obtained by firing an Au—Sn paste printing having a 75 to 85 wt% Au—Sn composition, and the Au layer and the Sn so as to have a 75 to 85 wt% Au—Sn composition. The layer in which the layers are stacked in multiple stages may be based on multilayer plating with a composition of 75 to 85 wt% Au—Sn.

Ａｕ−Ｓｎ組成を７５〜８５ｗｔ％としたのは、７５ｗｔ％未満だと脆くなり、封止加工に支障をきたし、８５ｗｔ％を超えると封着温度が上昇し、内部の素子に悪影響をおよぼすからである。
また、Ｃｕ層もしくはＣｕ合金層の厚さを０．０５〜２０μｍとした理由は、０．０５μｍ未満だと脆い層の生成制御の効果がなく、２０μｍを超えると封止加工に悪影響をおよぼすからである。なお、理想的には２μｍ程度がよい。 The reason why the Au-Sn composition is 75 to 85 wt% is that if it is less than 75 wt%, it becomes brittle and hinders the sealing process, and if it exceeds 85 wt%, the sealing temperature rises and adversely affects the internal elements. It is.
The reason why the thickness of the Cu layer or Cu alloy layer is 0.05 to 20 μm is that if it is less than 0.05 μm, there is no effect of controlling the formation of a fragile layer, and if it exceeds 20 μm, the sealing process is adversely affected. It is. Ideally, about 2 μm is preferable.

さらに、Ｃｕ合金からなる層を形成する場合、Ｃｕ成分組成は７０ｗｔ％以上が好ましく、７０ｗｔ％未満になると、Ｎｉ層の場合と同様な脆い層が生成され易いためである。
さらに、さらなるＡｕ−Ｓｎ部の溶融、拡がりを得たい場合は、Ｃｕ層もしくはＣｕ合金層上にＡｕ層を形成してもよい。 Furthermore, when a layer made of a Cu alloy is formed, the Cu component composition is preferably 70 wt% or more, and when it is less than 70 wt%, a brittle layer similar to the Ni layer is likely to be generated.
Furthermore, in order to obtain further melting and spreading of the Au—Sn part, an Au layer may be formed on the Cu layer or the Cu alloy layer.

このように、基板と封着材料との間にＣｕ層もしくはＣｕ合金層を形成することにより、基板に高価なＡｕ層を形成しなくても脆い層の生成をなくすことができ、Ａｕ−Ｓｎ部の十分な溶融、拡がりが得られ、完全な封止状態を得られるという効果がある。
また、Ｃｕ層もしくはＣｕ合金層上にＡｕ層を形成することにより、さらなるＡｕ−Ｓｎ部の溶融、拡がりを得ることができる。 Thus, by forming a Cu layer or a Cu alloy layer between the substrate and the sealing material, it is possible to eliminate generation of a fragile layer without forming an expensive Au layer on the substrate. There is an effect that sufficient melting and spreading of the part can be obtained, and a completely sealed state can be obtained.
Further, by forming the Au layer on the Cu layer or the Cu alloy layer, further melting and spreading of the Au—Sn portion can be obtained.

以下に、図面を参照して本発明の実施例を説明する。
第１実施例 コバール材からなる幅方向断面形状が板厚２ｍｍ、幅２０ｍｍの基板１に、Ｃｕからなる幅方向断面形状が板厚０．０４ｍｍ、幅２０ｍｍの接合材２をクラッド加工により複合し、幅方向断面形状が板厚０．１２ｍｍ、幅２０ｍｍからなる第１複合材３とした（図１）。 Embodiments of the present invention will be described below with reference to the drawings.
First Example A cross-sectional shape made of Kovar material having a plate thickness of 2 mm and a width of 20 mm is combined with a bonding material 2 made of Cu having a width direction cross-sectional shape of a plate thickness of 0.04 mm and a width of 20 mm by cladding. The first composite material 3 having a cross-sectional shape in the width direction having a plate thickness of 0.12 mm and a width of 20 mm was obtained (FIG. 1).

つぎに、この第１複合材３の接合材２面上に８０ｗｔ％Ａｕ−Ｓｎ合金からなる幅方向断面形状が板厚０．０１２ｍｍ、幅２０ｍｍからなる封着材４をクラッド加工により複合し、幅方向断面形状が板厚０．１ｍｍ、幅２０ｍｍからなる第２複合材５をつくり（図２）、プレス加工により、板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ａを得た。
なお、上記において、コバール材からなる基板１にＣｕからなる接合材２をクラッド加工により複合させた後、非酸化性雰囲気にて６００〜８００°Ｃの熱処理を行うとコバール材との接合強度が増し、より効果的である。 Next, a sealing material 4 having a cross-sectional shape in the width direction made of an 80 wt% Au—Sn alloy having a plate thickness of 0.012 mm and a width of 20 mm is combined on the surface of the bonding material 2 of the first composite material 3 by cladding. A second composite material 5 having a cross-sectional shape in the width direction having a plate thickness of 0.1 mm and a width of 20 mm was produced (FIG. 2), and a 3 mm square composite sealing material A having a plate thickness of 0.1 mm was obtained by pressing.
In the above, when the bonding material 2 made of Cu is combined with the substrate 1 made of the Kovar material by clad processing, and heat treatment is performed at 600 to 800 ° C. in a non-oxidizing atmosphere, the bonding strength with the Kovar material is increased. More effective.

第２実施例 上記第１実施例の基板１のコバール材を４２アロイ材にし、上記と同様の方法で板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ｂを得た。
第３実施例 上記第１実施例の接合材２のＣｕを７０ｗｔ％Ｃｕ−Ｎｉ合金にし、上記と同様の方法で板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ｃを得た。
第４実施例 Ｃｕからなる幅方向断面形状が板厚１ｍｍ、幅２０ｍｍの条材６に、Ａｕからなる幅方向断面形状が板厚０．０５ｍｍ、幅２０ｍｍの条材７をクラッド加工により複合し、幅方向断面形状が板厚０．０４ｍｍ、幅２０ｍｍの接合材２とした（図３）。 Second Example A Kovar material of the substrate 1 of the first example was changed to 42 alloy material, and a 3 mm square composite sealing material B having a plate thickness of 0.1 mm was obtained in the same manner as described above.
Third Example Cu of the bonding material 2 of the first example was changed to 70 wt% Cu—Ni alloy, and a 3 mm square composite sealing material C having a plate thickness of 0.1 mm was obtained by the same method as described above.
Fourth Embodiment A strip material 6 having a width direction cross-sectional shape of Cu having a plate thickness of 1 mm and a width of 20 mm is combined with a strip material 7 having a width direction cross-sectional shape of Au having a plate thickness of 0.05 mm and a width of 20 mm by clad processing. The cross-sectional shape in the width direction was a bonding material 2 having a plate thickness of 0.04 mm and a width of 20 mm (FIG. 3).

コバール材からなる幅方向断面形状が板厚２ｍｍ、幅２０ｍｍの基板１とし、上記接合材２のＣｕ面とを合わせてクラッド加工により複合し、幅方向断面形状が板厚０．１２ｍｍ、幅２０ｍｍからなる第１複合材３とした（図４）。
つぎに、この第１複合材３のＡｕ面上に、８０ｗｔ％Ａｕ−Ｓｎ合金からなる幅方向断面形状が板厚０．０１２ｍｍ、幅２０ｍｍの封着材４をクラッド加工により複合し、幅方向断面形状が板厚０．１ｍｍ、幅２０ｍｍの第２複合材５をつくり（図５）、プレス加工により、板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ｄを得た。 A cross-sectional shape in the width direction made of Kovar material is a substrate 1 having a plate thickness of 2 mm and a width of 20 mm, and combined with the Cu surface of the bonding material 2 by clad processing, and the cross-sectional shape in the width direction is a plate thickness of 0.12 mm and a width of 20 mm. It was set as the 1st composite material 3 which consists of (FIG. 4).
Next, on the Au surface of the first composite material 3, a sealing material 4 having a cross-sectional shape in the width direction of 0.012 mm and a width of 20 mm made of an 80 wt% Au—Sn alloy is compounded by clad processing. A second composite material 5 having a sectional thickness of 0.1 mm and a width of 20 mm was produced (FIG. 5), and a 3 mm square composite sealing material D having a thickness of 0.1 mm was obtained by pressing.

第５実施例 上記第４実施例の基板１のコバール材を４２アロイ材にし、上記と同様の方法で板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ｅを得た。
第６実施例 上記第４実施例の接合材２のＣｕを９０ｗｔ％Ｃｕ−Ｎｉ合金にし、上記と同様の方法で板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ｆを得た。
第７実施例 コバール材からなる幅方向断面形状が板厚０．０９ｍｍ、幅２０ｍｍの基板１の片面に厚さ１μｍのＣｕメッキを施して接合材２とし、幅方向断面形状が板厚０．０９１ｍｍ、幅２０ｍｍからなる第１複合材３とした（図６）。 Fifth Example A Kovar material of the substrate 1 of the fourth example was changed to 42 alloy material, and a 3 mm square composite sealing material E having a plate thickness of 0.1 mm was obtained in the same manner as described above.
Sixth Example Cu of the bonding material 2 of the fourth example was changed to 90 wt% Cu—Ni alloy, and a 3 mm square composite sealing material F having a plate thickness of 0.1 mm was obtained by the same method as described above.
Seventh Example A cross-sectional shape in the width direction made of Kovar material has a plate thickness of 0.09 mm and a substrate 1 having a width of 20 mm is subjected to Cu plating with a thickness of 1 μm to form a bonding material 2. A first composite material 3 having a width of 091 mm and a width of 20 mm was obtained (FIG. 6).

つぎに、上記第１複合材３のＣｕ面上に、８０ｗｔ％Ａｕ−Ｓｎ組成の封着材４となるようにＡｕ層およびＳｎ層を多段に積層させて、幅方向断面形状が板厚０．００９ｍｍ、幅２０ｍｍの層をメッキ加工により形成し、幅方向断面形状が板厚０．１ｍｍ、幅２０ｍｍの第２複合材５をつくり（図７）、プレス加工により、板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ｇを得た。   Next, an Au layer and a Sn layer are laminated in multiple stages on the Cu surface of the first composite material 3 so as to be the sealing material 4 having an 80 wt% Au—Sn composition. A layer having a thickness of .009 mm and a width of 20 mm is formed by plating to form a second composite material 5 having a cross-sectional shape in the width direction of 0.1 mm and a width of 20 mm (FIG. 7). A 3 mm square composite sealing material G was obtained.

なお、上記において、コバール材からなる基板１の片面にＣｕメッキを施した後、非酸化性雰囲気にて６００〜８００°Ｃの熱処理を行うとコバール材との接合強度が増し、より効果的である。
第８実施例 上記第７実施例の基板１であるコバール材を４２アロイ材にし、上記と同様の方法で板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ｈを得た。 In the above, if Cu plating is performed on one side of the substrate 1 made of Kovar material and then heat treatment is performed at 600 to 800 ° C. in a non-oxidizing atmosphere, the bonding strength with the Kovar material increases, which is more effective. is there.
Eighth Example A Kovar material, which is the substrate 1 of the seventh example, was used as a 42 alloy material, and a 3 mm square composite sealing material H having a thickness of 0.1 mm was obtained in the same manner as described above.

第９実施例 上記第７実施例のＣｕメッキを８０ｗｔ％Ｃｕ−Ｎｉ合金メッキにし、上記と同様の方法で板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ｉを得た。
なお、上記１〜６の各実施例によるＣｕ層、Ｃｕ合金層、Ａｕ層ならびに所定のＡｕ−Ｓｎ組成の封着材になるようにＡｕ層およびＳｎ層を多段に積層させた層は、第７実施例以下の説明の如く、メッキ加工によるものでも同等であり、上記各実施例の技術はその概念も含むものである。 Ninth Example The Cu plating of the seventh example was changed to 80 wt% Cu—Ni alloy plating, and a 3 mm square composite sealing material I having a plate thickness of 0.1 mm was obtained by the same method as described above.
In addition, the layer which laminated | stacked Au layer and Sn layer in multiple stages so that it might become a sealing material of the predetermined Au-Sn composition by Cu layer by each Example of said 1-6, Cu alloy layer, Au layer, Seven Embodiments As described below, the same applies to plating, and the techniques of the above embodiments include the concept thereof.

つぎに、比較例１として、Ｎｉからなる幅方向断面形状が板厚１ｍｍ、幅２０ｍｍの条材に、Ａｕからなる幅方向断面形状が板厚０．０５ｍｍ、幅２０ｍｍの接合材をクラッド加工により複合し、幅方向断面形状が板厚０．１ｍｍ、幅２０ｍｍからなる第１複合材とした。
つぎに、コバール材からなる幅方向断面形状が板厚１ｍｍ、幅２０ｍｍの基板と上記第１複合材のＮｉ面とをクラッド加工により複合し、幅方向断面形状が板厚０．１２ｍｍ、幅２０ｍｍからなる第２複合材とした。 Next, as Comparative Example 1, a joining material having a width direction cross-sectional shape of Ni having a plate thickness of 1 mm and a width of 20 mm and a bonding material having a width direction cross-sectional shape of Au of 0.05 mm and a width of 20 mm are clad. A first composite material having a cross-sectional shape in the width direction having a plate thickness of 0.1 mm and a width of 20 mm was obtained.
Next, a substrate having a cross-sectional shape in the width direction made of Kovar material having a plate thickness of 1 mm and a width of 20 mm and the Ni surface of the first composite material are combined by clad processing, and the cross-sectional shape in the width direction has a plate thickness of 0.12 mm and a width of 20 mm. A second composite material consisting of

上記第２複合材のＡｕ面上に、８０ｗｔ％Ａｕ−Ｓｎ合金からなる幅方向断面形状が板厚０．０１２ｍｍ、幅２０ｍｍの封着材をクラッド加工により複合し、幅方向断面形状が板厚０．１ｍｍ、幅２０ｍｍの第３複合材をつくり、プレス加工により、板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ｊを得た。
比較例２ 上記基板のコバール材を４２アロイ材にし、上記と同様の方法で板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ｋを得た。 On the Au surface of the second composite material, a sealing material having a width direction cross-sectional shape of 80 wt% Au—Sn alloy having a plate thickness of 0.012 mm and a width of 20 mm is compounded by clad processing, and the width direction cross-sectional shape is the plate thickness. A third composite material having a thickness of 0.1 mm and a width of 20 mm was produced, and a 3 mm square composite sealing material J having a thickness of 0.1 mm was obtained by pressing.
Comparative Example 2 A Kovar material for the substrate was changed to 42 alloy material, and a 3 mm square composite sealing material K having a thickness of 0.1 mm was obtained in the same manner as described above.

比較例３ 上記接合材のＡｕを５０ｗｔ％Ｃｕ−Ｎｉ合金にし、上記と同様の方法で板厚０．１ｍｍからなる３ｍｍ角の複合封止材料Ｌを得た。
上記Ａ〜Ｌまでの複合封止材料をメタライズされたセラミックスパッケージ上に封着し、ヘリウムリーク試験により、封止状態を比較した結果を表１に示す。 Comparative Example 3 A composite sealing material L having a thickness of 0.1 mm and a thickness of 0.1 mm was obtained in the same manner as described above by changing the bonding material Au to a 50 wt% Cu—Ni alloy.
Table 1 shows the results of sealing the composite sealing materials A to L on a metallized ceramic package and comparing the sealing states by a helium leak test.

Figure 2006120915
Figure 2006120915

実施例の説明図Explanatory drawing of an Example 実施例の説明図Explanatory drawing of an Example 実施例の説明図Explanatory drawing of an Example 実施例を示す説明図Explanatory drawing which shows an Example 実施例の説明図Explanatory drawing of an Example 実施例の説明図Explanatory drawing of an Example 実施例の説明図Explanatory drawing of an Example 電子部品パッケージの斜視説明図Perspective view of electronic component package 電子部品パッケージの断面説明図Cross-sectional explanatory drawing of electronic component package

符号の説明Explanation of symbols

１ 基板
２ 接合材
３ 第１複合材
４ 封着材
５ 第２複合材
６ Ｃｕ条材
７ Ａｕ条材

DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Bonding material 3 1st composite material 4 Sealing material 5 2nd composite material 6 Cu strip material 7 Au strip material

Claims (4)

コバール材、４２アロイ材等の低膨張係数を有する封止材料によって電子部品保護パッケージを封着材を介して封着する封止材料において、
コバール材、４２アロイ材等の低膨張係数を有する基板の片面に、厚さ０．０５〜２０μｍのＣｕ層を形成し、そのＣｕ層面にＡｕ−Ｓｎ合金からなる封着層を形成したことを特徴とする封止材料。 In a sealing material for sealing an electronic component protection package via a sealing material with a sealing material having a low expansion coefficient such as Kovar material, 42 alloy material,
A Cu layer having a thickness of 0.05 to 20 μm was formed on one surface of a substrate having a low expansion coefficient such as Kovar material or 42 alloy material, and a sealing layer made of an Au—Sn alloy was formed on the Cu layer surface. Characteristic sealing material. コバール材、４２アロイ材等の低膨張係数を有する封止材料によって電子部品保護パッケージを封着材を介して封着する封止材料において、
コバール材、４２アロイ材等の低膨張係数を有する基板の片面に、厚さ０．０５〜２０μｍのＣｕ層とさらにＡｕ層を形成し、そのＡｕ層面にＡｕ−Ｓｎ合金からなる封着層を形成したことを特徴とする封止材料。 In a sealing material for sealing an electronic component protection package via a sealing material with a sealing material having a low expansion coefficient such as Kovar material, 42 alloy material,
A Cu layer having a thickness of 0.05 to 20 μm and an Au layer are further formed on one surface of a substrate having a low expansion coefficient such as Kovar material and 42 alloy material, and a sealing layer made of an Au—Sn alloy is formed on the Au layer surface. A sealing material characterized by being formed. コバール材、４２アロイ材等の低膨張係数を有する封止材料によって電子部品保護パッケージを封着材を介して封着する封止材料において、
コバール材、４２アロイ材等の低膨張係数を有する基板の片面に、厚さ０．０５〜２０μｍのＣｕ層を形成し、そのＣｕ層面にＡｕ−Ｓｎ組成になるようにＡｕ層およびＳｎ層を多段に積層させて封着層を形成したことを特徴とする封止材料。 In a sealing material for sealing an electronic component protection package via a sealing material with a sealing material having a low expansion coefficient such as Kovar material, 42 alloy material,
A Cu layer having a thickness of 0.05 to 20 μm is formed on one surface of a substrate having a low expansion coefficient such as Kovar material or 42 alloy material, and an Au layer and an Sn layer are formed on the Cu layer surface so as to have an Au—Sn composition. A sealing material, wherein a sealing layer is formed by laminating in multiple stages. 請求項１、請求項２もしくは請求項３において、Ｃｕ層をＣｕ合金層としたことを特徴とする封止材料。

4. The sealing material according to claim 1, wherein the Cu layer is a Cu alloy layer.

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