JP2006120878A - 液浸露光装置及びそれを用いたデバイス製造方法 - Google Patents

液浸露光装置及びそれを用いたデバイス製造方法 Download PDF

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Publication number
JP2006120878A
JP2006120878A JP2004307528A JP2004307528A JP2006120878A JP 2006120878 A JP2006120878 A JP 2006120878A JP 2004307528 A JP2004307528 A JP 2004307528A JP 2004307528 A JP2004307528 A JP 2004307528A JP 2006120878 A JP2006120878 A JP 2006120878A
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Japan
Prior art keywords
liquid
substrate
exposure apparatus
immersion exposure
optical system
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JP2004307528A
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Japanese (ja)
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JP2006120878A5 (enExample
Inventor
Keiko Chiba
啓子 千葉
Sunao Mori
直 森
Keisui Banno
渓帥 坂野
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Canon Inc
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Canon Inc
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Priority to JP2004307528A priority Critical patent/JP2006120878A/ja
Publication of JP2006120878A publication Critical patent/JP2006120878A/ja
Publication of JP2006120878A5 publication Critical patent/JP2006120878A5/ja
Withdrawn legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2004307528A 2004-10-22 2004-10-22 液浸露光装置及びそれを用いたデバイス製造方法 Withdrawn JP2006120878A (ja)

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JP2004307528A JP2006120878A (ja) 2004-10-22 2004-10-22 液浸露光装置及びそれを用いたデバイス製造方法

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JP2004307528A JP2006120878A (ja) 2004-10-22 2004-10-22 液浸露光装置及びそれを用いたデバイス製造方法

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JP2006120878A true JP2006120878A (ja) 2006-05-11
JP2006120878A5 JP2006120878A5 (enExample) 2007-12-06

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JP2004307528A Withdrawn JP2006120878A (ja) 2004-10-22 2004-10-22 液浸露光装置及びそれを用いたデバイス製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007013180A (ja) * 2005-06-29 2007-01-18 Qimonda Ag 液浸リソグラフィシステム用液体
WO2012011512A1 (ja) * 2010-07-20 2012-01-26 株式会社ニコン 露光方法、露光装置および洗浄方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007013180A (ja) * 2005-06-29 2007-01-18 Qimonda Ag 液浸リソグラフィシステム用液体
WO2012011512A1 (ja) * 2010-07-20 2012-01-26 株式会社ニコン 露光方法、露光装置および洗浄方法

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