JP2006120833A - Package structure of electro-optical semiconductor - Google Patents

Package structure of electro-optical semiconductor Download PDF

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Publication number
JP2006120833A
JP2006120833A JP2004306730A JP2004306730A JP2006120833A JP 2006120833 A JP2006120833 A JP 2006120833A JP 2004306730 A JP2004306730 A JP 2004306730A JP 2004306730 A JP2004306730 A JP 2004306730A JP 2006120833 A JP2006120833 A JP 2006120833A
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electro
optic semiconductor
optic
heat conducting
package structure
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Inventor
Heiryu O
秉 龍 汪
Fenghui Zhuang
峰 輝 莊
Shih-Yu Wu
世 裕 巫
Ching-Hung Ko
慶 鴻 柯
Chun-Cheng Weng
駿 程 翁
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Harvatek Corp
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Harvatek Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To provide the package structure of an electro-optical semiconductor which has the merits of achieving a high thermal conductivity and integral molding for a package and never allows easy deformation of the package and thereby can improve the yield and quality thereof, and which can meet package requirements for an electronic chip more easily than the conventional package structure at the time of packaging a chip which uses a light emitting diode. <P>SOLUTION: By improving the strength and thermoconductive structure of the package primarily by using a method of integral molding material, a decline is prevented in life of an electro-optical device due to overheating of an electro-optical chip. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、高い熱伝導及び一体成形の利点を有し、容易に変形することがないことにより、パッケージの収量や品質を向上して、発光ダイオードを使用するチップをパッケージする時、従来のパッケージ構造より、容易に電子チップに必要されるパッケージ要請を達成できる。主として、一体成形材料の方法を利用して、パッケージ強度及び熱伝導構造を改善することにより、電気光学チップが過熱するため、電気光学デバイスの寿命を低減することを防止する、電気光学半導体のパッケージ構造に関する。主として、熱伝導材の設置方法(例えば、熱伝導粘着剤や金属ハウジング)により、パッケージ体の熱伝導特性を改善でき、一体成形により、実装コストを節約できるため、従来の発光体パッケージ構造より、優れたパッケージ構造を提供する。   The present invention has the advantages of high heat conduction and integral molding, and does not easily deform, thereby improving the yield and quality of the package, and when packaging a chip using a light emitting diode, the conventional package Due to the structure, it is possible to easily achieve a package requirement required for an electronic chip. An electro-optic semiconductor package that prevents a reduction in the life of the electro-optic device due to overheating of the electro-optic chip, mainly by improving the package strength and heat conduction structure utilizing the method of monolithic molding material Concerning structure. Mainly, the installation method of the heat conduction material (for example, heat conduction adhesive or metal housing) can improve the heat conduction characteristics of the package body, and the integration molding can save the mounting cost. Provide an excellent package structure.

パッケージ産業において、電気光学半導体パッケージが注目され、また、発光ダイオード(LED)及び光検出子のパッケージ産業も、電子製品の軽量化や軽薄化、及び高い機能という要求下で、、今では、半導体パッケージに負けず、より重要視される。また、LEDや半導体パッケージ産業のパッケージ技術が、更新されつつ、例えば、表面実装技術(SMT)の基準に満たす2ピンアウト及び4ピンアウトのLEDがあり、特に、ピンアウトがより多いほど、そのパッケージ構造には、より優れるパッケージが必要され、同じように、パッケージした後、製品の輝度も、大切な要求になる。   In the package industry, electro-optic semiconductor packages have attracted attention, and the package industry for light emitting diodes (LEDs) and photodetectors has now become a semiconductor under the demand for lighter and lighter electronic products and higher functionality. More important than the package. In addition, while LED and semiconductor package industry package technologies are being updated, for example, there are 2-pin-out and 4-pin-out LEDs that meet the standards of surface mount technology (SMT), and in particular, the more pinout, the more the package structure In the same way, after packaging, the brightness of the product is also an important requirement.

一般のユーザーが分かっているように、電子実装技術とは、半導体集積回路や発光ダイオードを作製してから、他の電子素子とともに、接続構造に組み合わせられて、電子製品になる、所定の設計機能を達成する全ての工程である。電子実装には、主な機能が、各々、配電(Power Distribution)、信号配送(Signal Distribution)、熱損失(Heat Dissipation)、及び保護と支持(Protection and Support)の四つである。例えば、よく、IC集積回路チップのパッケージや発光ダイオードLEDのパッケージに常用される。   As the general user knows, electronic packaging technology is a design function that creates semiconductor integrated circuits and light emitting diodes and then combines them with other electronic elements into a connection structure to become an electronic product. All the steps to achieve In the electronic implementation, there are four main functions, power distribution, signal distribution, heat distribution, and protection and support, respectively. For example, it is often used for IC integrated circuit chip packages and light emitting diode LED packages.

図1は、従来の発光ダイオードのパッケージ構造1aであり、埋め込み式出射体10aは、熱伝導金属材30aにより、発光ダイオードチップ20aをベースのカップ面40a(ベース50aの上)に粘着し、そして、ピン11aを接続するパッケージ状況であり、特に、組み立て時、従来の発光ダイオードのパッケージ構造1aには、組み立てが困難である問題や反射カップの問題があり、例えば、反射カップには、光線が反射することが発生し(例えば、懐中電灯の反射カップ)(但し、レンズ12aは、点状フォーカシングに対して、発散光やリーク光が発生し、当該発散光やリーク光は、光フォーカシングにとって不利である)、実際の応用において、光源の精度に影響を与え、また、分離式パッケージ(ベース50aと埋め込み式出射体10aを分離する設計)の収量及び組み立てにも、悪影響を与える。そのため、実際の応用要求に満たす、容易に組み立てられる、且つ、輝度が集中できるパッケージ構成を、開発する必要がある。   FIG. 1 shows a conventional light emitting diode package structure 1a, in which an embedded emitter 10a adheres a light emitting diode chip 20a to a base cup surface 40a (on a base 50a) with a heat conductive metal material 30a, and , The package situation of connecting the pins 11a. In particular, at the time of assembly, the conventional light emitting diode package structure 1a has a problem that it is difficult to assemble and a problem of a reflective cup. Reflection occurs (for example, a reflection cup of a flashlight) (however, the lens 12a generates divergent light or leak light with respect to point-like focusing, and the divergent light or leak light is disadvantageous for optical focusing. In the actual application, the accuracy of the light source is affected, and the separation type package (base 50a and embedded type) Also yield and assembly design) separating the Itay 10a, an adverse effect. For this reason, it is necessary to develop a package configuration that satisfies actual application requirements, can be easily assembled, and can concentrate luminance.

そのため、現在では、市販の発光ダイオードに対して、光源が容易に集中され、組み立ての利便性を有すること(一体成形が最も良い)は、パッケージ過程において、大切な要請であるため、発明者は上記の需要を満足できる本発明を開発した。   Therefore, at present, it is an important requirement in the packaging process that the light source is easily concentrated and the convenience of assembly is the best for the commercially available light-emitting diodes. The present invention has been developed to satisfy the above demand.

本発明の主な目的は、構造が簡素化である、高い光源集中の良い品質の発光ダイオード及び光検出子のパッケージ構造を提供し、レンズとともにパッケージされる必要がある、電気光学半導体(例えば、発光ダイオード)に適用でき、ローコスト且つ高品質のパッケージ効果を実現できる。   The main objective of the present invention is to provide a light source diode and photodetector package structure with high light source concentration, which is simple in structure, and needs to be packaged with a lens, such as an electro-optic semiconductor (e.g., It can be applied to a light emitting diode) and can realize a low-cost and high-quality package effect.

上記の目的を達成するため、本発明は、一体成形である外枠及び反射カップのない支承チップデバイスを、主な構造とし、そして、熱伝導シート材が、容易に熱伝導をする特徴を合わせて、また、従来のパッケージ工程及び工程の困難性の低い周辺設備を検討して、当該工程を結合することにより、開発された。   In order to achieve the above object, the present invention has a main structure of a support chip device having an outer frame and a reflection cup which are integrally formed, and the heat conductive sheet material has a feature of easily conducting heat. In addition, the conventional packaging process and peripheral equipment with low process difficulty were studied, and the process was developed by combining the processes.

さらに、本発明は、金線(或いは他の金属線)のワイヤボンディングを利用するベアチップパッケージ方式や透明な粘着剤がパッケージされた電気光学チップに応用でき、場合によって、異なる実施例ができる。   Furthermore, the present invention can be applied to a bare chip package method using wire bonding of gold wires (or other metal wires) or an electro-optical chip packaged with a transparent adhesive, and different embodiments can be made depending on the case.

本発明の構造には、熱伝導本体とピンとがあり、熱伝導本体とピンとが、電気絶縁的に、直接接続され、或いは、絶縁ピンスリーブを介して接続され、また、筐体と、熱伝導材(熱伝導粘着剤や熱伝導金属シート)からなる、当該熱伝導本体内部の平面上に設置され、発光や光検出能力がある半導体構造である、電気光学半導体構造と、透過材からなる、当該熱伝導本体の上に設けられ、当該電気光学半導体に面する、レンズデバイスと、が含有される。その中、当該筐体は、一体成形である。   The structure of the present invention includes a heat conduction body and a pin. The heat conduction body and the pin are directly connected electrically or via an insulating pin sleeve. It consists of a material (thermal conductive adhesive or thermal conductive metal sheet), is installed on a plane inside the thermal conductive body, and is a semiconductor structure that has a light emission and light detection capability, an electro-optic semiconductor structure, and a transmissive material, A lens device provided on the heat conducting body and facing the electro-optic semiconductor. Among them, the casing is integrally formed.

以下の本発明に係わる詳しい説明や図面により、本発明の特徴や技術内容は、良く分かるようになるが、本発明は、参考や説明のための図面によって、制限されない。   The features and technical contents of the present invention will be better understood from the following detailed description and drawings related to the present invention, but the present invention is not limited by the drawings for reference and explanation.

本発明は、(1)必要とする新しい設備コストや技術要求がさっほど大きくないため、新工程の設置が容易であること、(2)一体成形で組み立ての利便性がよいこと、(3)従来のパッケージ設備を援用できること、(4)高品質の光学設備にあわせる、優れた発光均一度があること、という利点がある。   In the present invention, (1) new equipment costs and technical requirements required are not so high, so that a new process is easy to install, (2) the convenience of assembly is good by integral molding, (3) There is an advantage that conventional package equipment can be used, and (4) there is excellent light emission uniformity in accordance with high-quality optical equipment.

本発明の原理は、一つの点にレンズフォーカシングすることにより、光源の品質を向上し、且つ、不必要なパーツを削除し、特に、所定の点領域に対する高輝度の光学デバイス(例えば、スキャナーにおいて、均一的な輝度でペーパ上に照射する、やディジタルカメラにおいて、フォーカシングに、明白さを重要視する、結像光源)と、本発明においての一体成形である外枠とにより、熱伝導の効率が向上され、また、組み立てが便利になる。   The principle of the present invention is to improve the quality of the light source by lens focusing to one point and to eliminate unnecessary parts, especially in a high brightness optical device (for example, in a scanner) The efficiency of heat conduction by illuminating the paper with uniform brightness or imaging light source focusing on clarity in focusing in a digital camera and the outer frame which is integrally molded in the present invention And the assembly becomes convenient.

また、本発明は、結晶線のワイヤボンディングを利用するベアチップパッケージ方式(図2A及び図2Bのように)や透明な粘着剤がパッケージされた電気光学チップに、応用でき、異なる実施例ができる。   Further, the present invention can be applied to a bare chip package system using wire bonding of crystal lines (as shown in FIGS. 2A and 2B) and an electro-optical chip packaged with a transparent adhesive, and different embodiments can be made.

図2A乃至図2Cや、類似する図3A乃至図3C及び図4A乃至図4Cを参照しながら、本発明の電気光学半導体のパッケージ構造を説明すると、熱伝導本体12(例えば、熱伝導金属シートや熱伝導粘着剤のような熱伝導材により筐体10の底面に接続される、金属やセラミック或いはプラスチックの材料である)及びピン14とがあり、熱伝導本体12とピン14とが、電気絶縁的に、直接接続され、或いは、絶縁ピンスリーブ16(セラミックからなる)を介して接続する、筐体10と、熱伝導シート材30(熱伝導粘着剤や熱伝導金属シートである)からなる、当該熱伝導本体内部の平面上(一般的に、レンズデバイス40のフォーカシング領域である)に設置され、発光や光検出能力がある半導体構造である、電気光学半導体構造20(複数枚でもいい)と、透過材からなる、当該熱伝導本体12の上に設けられ、当該電気光学半導体20に面する、レンズデバイス40と、が含有される。当該筐体は、一体成形である。   The package structure of the electro-optic semiconductor of the present invention will be described with reference to FIGS. 2A to 2C and similar FIGS. 3A to 3C and 4A to 4C. The heat conductive body 12 (for example, a heat conductive metal sheet, And a pin 14 which is connected to the bottom surface of the housing 10 by a heat conductive material such as a heat conductive adhesive, and a pin 14, and the heat conductive body 12 and the pin 14 are electrically insulated. In particular, the housing 10 and the heat conductive sheet material 30 (which is a heat conductive adhesive or a heat conductive metal sheet) that are directly connected or connected via an insulating pin sleeve 16 (made of ceramic), An electro-optic semiconductor structure, which is a semiconductor structure that is installed on a plane inside the heat conducting body (generally, a focusing region of the lens device 40) and has a light emission and light detection capability 0 (even plural good), made of transparent material, provided on the heat conducting body 12, facing the electro-optical semiconductor 20, a lens device 40, is contained. The casing is integrally molded.

本発明には、次のような、細部変化の実施例ができ、当該電気光学半導体構造20には、高分子パッケージ粘着剤を含む透過部分と通電接点(例えば、周知の発光ダイオードパッケージである)とがあり、また、当該通電接点と当該熱伝導本体12内部の平面上にあるベース材32(導電構造(例えば、ピン14を伸ばすか、他に、導電シートにより接続する)とベース材とを接続することにより、導電の機能を実現する)と電気的に接続(回路接続)し、当該ベース材32(当該ベース材32には、フランジ34がある)は、当該熱伝導本体12内部の平面上(当該ベース材は、熱伝導シート材30の代わりに、電気光学半導体構造20とホットプレス接続してもいいし、熱伝導シート材30を介してホットプレス接続してもいい)に固定され、また、当該電気光学半導体20は、発光ダイオードや光検出子である。   In the present invention, the following details can be changed. The electro-optic semiconductor structure 20 includes a transmissive portion including a polymer package adhesive and a current-carrying contact (for example, a well-known light-emitting diode package). In addition, the base member 32 (conductive structure (for example, the pin 14 is extended or otherwise connected by a conductive sheet)) and the base member which are on the plane inside the heat conduction body 12 and the current-carrying contact The base material 32 (the base material 32 has a flange 34) is electrically connected to a plane inside the heat conduction main body 12. Fixed above (the base material may be hot-press connected to the electro-optic semiconductor structure 20 instead of the heat conductive sheet material 30 or hot-press connected via the heat conductive sheet material 30) It is also the electro-optical semiconductor 20 is a light emitting diode or light detectors.

また、熱伝導本体12は、高分子複合材料からなり、当該電気光学半導体構造20の熱伝導経路を熱伝導本体の底面(金属シートや熱伝導粘着剤である)に接続する熱伝導材を有し、また、熱伝導本体12は、セラミック材料からなり、当該電気光学半導体構造20の熱伝導経路を熱伝導本体12の底面に接続する熱伝導材を有し、また、当該筐体10は、金属材質であり、また、当該電気光学半導体構造は、リードのワイヤボンディング(例えば、金属線)をして、当該ピン14に接続され(例えば、図2Aと図2Bのように)、また、当該熱伝導シート材は、熱伝導金属シートやシリコンベース熱伝導粘着剤であり、また、当該筐体は、金属ハウジングであり、熱伝導本体は、粉体噴射であり、絶縁ピンスリーブがピンを覆うことにより、ピンと熱伝導本体とが電気絶縁になり、また、ベース材は、高分子材料材質であり、当該高分子材料の基板に、抵抗や誘導子が埋め込まれる。また、当該電気光学半導体構造において、均一的に熱伝導本体内部の所定平面上(即ち、レンズデバイス40のフォーカシング領域の平面)に分布するように配列される。   The heat conduction body 12 is made of a polymer composite material, and has a heat conduction material that connects the heat conduction path of the electro-optic semiconductor structure 20 to the bottom surface of the heat conduction body (a metal sheet or a heat conduction adhesive). The heat conduction body 12 is made of a ceramic material, and has a heat conduction material that connects the heat conduction path of the electro-optic semiconductor structure 20 to the bottom surface of the heat conduction body 12. The electro-optic semiconductor structure is made of a metal material, and is connected to the pin 14 by wire bonding (for example, metal wire) of a lead (for example, as shown in FIGS. 2A and 2B). The heat conductive sheet material is a heat conductive metal sheet or a silicon-based heat conductive adhesive, the casing is a metal housing, the heat conductive body is powder injection, and an insulating pin sleeve covers the pins. By It becomes the pin and the thermally conductive body electrically insulating, also the base member is a polymeric material material, the substrate of the polymer material, the resistance and the inductor is embedded. Further, in the electro-optic semiconductor structure, the electro-optic semiconductor structures are arranged so as to be uniformly distributed on a predetermined plane inside the heat conducting body (that is, the focusing area plane of the lens device 40).

本発明の特徴や利便なところは、従来の反射カップ構造を省略して、集光領域の輝度を均一にし、また、一体成形方式(プラスチック埋め込み金属スタンド方式や、セラミックあるいは金属材料埋め込み金属スタンド方式である)を利用して、パッケージ構造に対して、光学特性を改善し、そして、一体成形により、組み立ての利便性が強化され、また、設置コストが低いことと従来の発光ダイオードチップのパッケージ生産線に大きい影響を与えないという効果が得られる。そのため、本発明の設置は、容易であり、また、本発明の筐体構造は、発光品質や組み立ての利便を両立し、また、本発明は、従来のパッケージ過程の加工順に、大きい影響を与えないため、完全に、既存するパッケージ過程に融和し、既存のパッケージ機械を大幅に変更する必要がないから、製造上の実際状況に合わせる、有利な発明である。   The features and convenience of the present invention are that the conventional reflecting cup structure is omitted, the brightness of the light collecting region is made uniform, and an integral molding method (plastic embedded metal stand method, ceramic or metal material embedded metal stand method) To improve the optical characteristics of the package structure, and the integral molding enhances the convenience of assembly, and the installation cost is low, and the conventional LED chip package production The effect of not greatly affecting the line is obtained. Therefore, the installation of the present invention is easy, and the casing structure of the present invention achieves both the light emission quality and the convenience of assembly, and the present invention has a great influence on the processing order of the conventional packaging process. Therefore, it is an advantageous invention that is completely compatible with the existing packaging process and does not require significant changes to the existing packaging machine.

以上の説明のように、本発明は、産業上の有用性や新鋭性及び進歩性を持つものであるため、特許出願の要件を完備しているから、法に従って特許出願する。   As described above, since the present invention has industrial utility, novelty, and inventive step, the requirements for patent application are complete, so a patent application is filed according to the law.

従来の発光ダイオードのパッケージ構造の概念図Conceptual diagram of conventional light emitting diode package structure 本発明の実施例1の上面視構造の概念図Schematic diagram of the top view structure of Example 1 of the present invention 本発明の実施例1の正面視断面構造の概念図Conceptual diagram of a front-view cross-sectional structure of Example 1 of the present invention 本発明の実施例1の側面視構造の概念図The conceptual diagram of the side view structure of Example 1 of this invention 本発明の実施例2の上面視構造の概念図Schematic diagram of the top view structure of Example 2 of the present invention 本発明の実施例2の正面視断面構造の概念図Conceptual diagram of a front view cross-sectional structure of Example 2 of the present invention 本発明の実施例2の側面視構造の概念図The conceptual diagram of the side view structure of Example 2 of this invention 本発明の実施例3の上面視構造の概念図Conceptual diagram of the top view structure of Example 3 of the present invention 本発明の実施例3の正面視断面構造の概念図Conceptual diagram of a front view cross-sectional structure of Example 3 of the present invention 本発明の実施例3の側面視構造の概念図The conceptual diagram of the side view structure of Example 3 of this invention

符号の説明Explanation of symbols

10 筐体
12 熱伝導本体
14 ピン
16 絶縁ピンスリーブ
20 電気光学半導体構造
30 熱伝導シート材
32 ベース材
34 フランジ
40 レンズデバイス
DESCRIPTION OF SYMBOLS 10 Case 12 Thermal conduction main body 14 Pin 16 Insulation pin sleeve 20 Electro-optic semiconductor structure 30 Thermal conduction sheet material 32 Base material 34 Flange 40 Lens device

Claims (12)

熱伝導本体とピンとがあり、一体成形である、筐体と、
熱伝導シート材からなる、当該熱伝導本体内部の平面上に設置される、電気光学半導体構造と、
透過材からなる、レンズデバイスと、を含有する、ことを特徴とする、電気光学半導体のパッケージ構造。
There is a heat conduction body and a pin, and a housing that is integrally molded,
An electro-optic semiconductor structure that is installed on a plane inside the heat conduction body, made of a heat conduction sheet material,
A package structure of an electro-optic semiconductor comprising a lens device made of a transmitting material.
熱伝導本体とピンとは、電気絶縁的に、直接接続され、或いは、絶縁ピンスリーブを介して接続され、また、電気光学半導体構造は、発光や光検出能力がある半導体構造であり、また、当該レンズデバイスは、当該熱伝導本体の上に設けられ、当該電気光学半導体に面する、ことを特徴とする請求項1に記載の電気光学半導体のパッケージ構造。 The heat conduction body and the pin are electrically insulated and directly connected or connected via an insulating pin sleeve, and the electro-optic semiconductor structure is a semiconductor structure capable of emitting light and detecting light. 2. The electro-optic semiconductor package structure according to claim 1, wherein the lens device is provided on the heat conducting body and faces the electro-optic semiconductor. 当該電気光学半導体構造には、高分子パッケージ粘着剤を含む透過部分と通電接点とがあり、当該通電接点と当該熱伝導本体内部の平面上にあるベース材と電気的に接続し、当該ベース材は、当該熱伝導本体内部の平面上に固定される、ことを特徴とする請求項1に記載の電気光学半導体のパッケージ構造。 The electro-optic semiconductor structure has a transmissive portion including a polymer package adhesive and a current-carrying contact, and is electrically connected to the base material on a plane inside the heat-conducting main body and the base material. 2. The electro-optic semiconductor package structure according to claim 1, wherein the package is fixed on a plane inside the heat conducting body. 当該電気光学半導体は、発光ダイオードや光検出子である、ことを特徴とする請求項1に記載の電気光学半導体のパッケージ構造。 2. The electro-optic semiconductor package structure according to claim 1, wherein the electro-optic semiconductor is a light emitting diode or a photodetector. 熱伝導本体は、高分子複合材料からなり、当該電気光学半導体構造の熱伝導経路を熱伝導本体の底面に接続する熱伝導材を有する、ことを特徴とする請求項1に記載の電気光学半導体のパッケージ構造。 2. The electro-optic semiconductor according to claim 1, wherein the heat conducting body is made of a polymer composite material, and has a heat conducting material that connects a heat conduction path of the electro-optic semiconductor structure to a bottom surface of the heat conducting body. Package structure. 熱伝導本体は、セラミック材料からなり、当該電気光学半導体構造の熱伝導経路を熱伝導本体の底面に接続する熱伝導材を有する、ことを特徴とする請求項1に記載の電気光学半導体のパッケージ構造。 2. The electro-optic semiconductor package according to claim 1, wherein the heat conducting body is made of a ceramic material and has a heat conducting material that connects a heat conducting path of the electro-optic semiconductor structure to a bottom surface of the heat conducting body. Construction. 当該筐体は、金属材質である、ことを特徴とする請求項1に記載の電気光学半導体のパッケージ構造。 2. The electro-optic semiconductor package structure according to claim 1, wherein the casing is made of a metal material. 当該電気光学半導体構造は、リードのワイヤボンディングをして当該ピンに接続される、ことを特徴とする請求項1に記載の電気光学半導体のパッケージ構造。 2. The electro-optic semiconductor package structure according to claim 1, wherein the electro-optic semiconductor structure is connected to the pins by wire bonding of leads. 当該熱伝導シート材は、シリコンベース熱伝導粘着剤や熱伝導金属シートである、ことを特徴とする請求項1に記載の電気光学半導体のパッケージ構造。 2. The electro-optical semiconductor package structure according to claim 1, wherein the heat conductive sheet material is a silicon-based heat conductive adhesive or a heat conductive metal sheet. 当該筐体は、金属ハウジングであり、熱伝導本体は、粉体噴射であり、絶縁ピンスリーブがピンを覆うことにより、ピンと熱伝導本体とが電気絶縁になる、ことを特徴とする請求項1に記載の電気光学半導体のパッケージ構造。 2. The housing is a metal housing, the heat conducting body is powder injection, and the insulating pin sleeve covers the pin, whereby the pin and the heat conducting body are electrically insulated. A package structure of the electro-optic semiconductor according to 1. ベース材は、高分子材料材質であり、当該高分子材料の基板に、抵抗や誘導子が埋め込まれる、ことを特徴とする請求項3に記載の電気光学半導体のパッケージ構造。 4. The electro-optic semiconductor package structure according to claim 3, wherein the base material is made of a polymer material, and a resistor or an inductor is embedded in the substrate of the polymer material. 当該電気光学半導体構造において、熱伝導本体内部の所定平面上に均一的に分布するように配列される、ことを特徴とする請求項1に記載の電気光学半導体のパッケージ構造。
2. The electro-optic semiconductor package structure according to claim 1, wherein the electro-optic semiconductor structure is arranged so as to be uniformly distributed on a predetermined plane inside the heat conducting body.
JP2004306730A 2004-10-21 2004-10-21 Package structure of electro-optical semiconductor Pending JP2006120833A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022009833A (en) * 2015-11-18 2022-01-14 日亜化学工業株式会社 Light-emitting device

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103841U (en) * 1983-12-19 1985-07-15 ソニー株式会社 electronic parts equipment
JP2001156380A (en) * 1999-11-30 2001-06-08 Matsushita Electronics Industry Corp Chip type semiconductor laser device
JP2002093206A (en) * 2000-09-18 2002-03-29 Stanley Electric Co Ltd Led signal light
JP2002252373A (en) * 2001-02-26 2002-09-06 Nichia Chem Ind Ltd Surface-mounted type light-emitting element and light emission device using the same
JP3088472U (en) * 2002-03-08 2002-09-13 東貝光電科技股▲ふん▼有限公司 Light emitting diode
JP2002359403A (en) * 2001-05-31 2002-12-13 Nichia Chem Ind Ltd Light-emitting device
JP2003092011A (en) * 2001-09-18 2003-03-28 Matsushita Electric Ind Co Ltd Lighting device
JP2003103826A (en) * 2001-09-27 2003-04-09 Kyocera Corp Optical printer head
JP2004228240A (en) * 2003-01-21 2004-08-12 Kyocera Corp Package for storing light emitting element and light emitting device
JP2004259958A (en) * 2003-02-26 2004-09-16 Kyocera Corp Package for housing light emitting element, and light emitting device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103841U (en) * 1983-12-19 1985-07-15 ソニー株式会社 electronic parts equipment
JP2001156380A (en) * 1999-11-30 2001-06-08 Matsushita Electronics Industry Corp Chip type semiconductor laser device
JP2002093206A (en) * 2000-09-18 2002-03-29 Stanley Electric Co Ltd Led signal light
JP2002252373A (en) * 2001-02-26 2002-09-06 Nichia Chem Ind Ltd Surface-mounted type light-emitting element and light emission device using the same
JP2002359403A (en) * 2001-05-31 2002-12-13 Nichia Chem Ind Ltd Light-emitting device
JP2003092011A (en) * 2001-09-18 2003-03-28 Matsushita Electric Ind Co Ltd Lighting device
JP2003103826A (en) * 2001-09-27 2003-04-09 Kyocera Corp Optical printer head
JP3088472U (en) * 2002-03-08 2002-09-13 東貝光電科技股▲ふん▼有限公司 Light emitting diode
JP2004228240A (en) * 2003-01-21 2004-08-12 Kyocera Corp Package for storing light emitting element and light emitting device
JP2004259958A (en) * 2003-02-26 2004-09-16 Kyocera Corp Package for housing light emitting element, and light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022009833A (en) * 2015-11-18 2022-01-14 日亜化学工業株式会社 Light-emitting device
JP7284424B2 (en) 2015-11-18 2023-05-31 日亜化学工業株式会社 light emitting device

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