JP2006100819A - 変形可能なゲートをもつmosトランジスタ - Google Patents
変形可能なゲートをもつmosトランジスタ Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000010355 oscillation Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 2
- 230000000994 depressogenic effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/005—Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0109—Bridges
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】半導体基板に形成された変形可能なゲートをもつMOSトランジスタは、ソースからドレインへの第一の方向及びその第一の方向に対して垂直な第二の方向へ向かって伸びるチャネルエリアにより分けられたソース及びドレインエリアと、チャネルエリアの両側の基板の上に設けられたベアリングポイントの間で第二の方向へ向かって伸びるチャネルエリアの少なくとも上部に設けられた導電ゲートの梁とを含み、そのチャネルエリアでは、チャネルエリアの表面がくぼんでおり、前記梁がチャネルエリアに対して最大のたわみを有するとき、ゲートの梁の形と同様の形をチャネルエリアの表面が有する。
【選択図】図4
Description
チャネルエリア、長さ:5−50μm
幅:1−20μm
ゲートの梁、 長さ:5−60μm
幅:1−30μm
2、16、38 ゲートの梁
3、4 柱
5、6、11、12 ソース/ドレインエリア
7、13 チャネルエリア
14、35 ゲート酸化層
20 増幅器
21 トランジスタ
31 保護層
32 開口部
33 くぼみ
36 第一の犠牲部分
37 第二の犠牲部分
C キャパシタ
fr 共振周波数
i 電流
L コイル
Vpol バイアス電圧
Claims (7)
- ソースからドレインへの第一の方向及び前記第一の方向に垂直な第二の方向へ向かって伸びるチャネルエリア(13)により分けられたソース及びドレイン(11、12)と、前記チャネルエリアの両側の基板の上に設けられたベアリングポイントの間で前記第二の方向へ向かって伸びる該チャネルエリアの少なくとも上部に設けられた導電ゲートの梁とを含み、該チャネルエリアの表面が、くぼんでおり、前記梁が該チャネルエリアに対して最大のたわみを有するとき、該ゲートの梁の形と同様の形を該チャネルエリアの表面が有することを特徴とする半導体基板(10)に形成された変形可能なゲートをもつMOSトランジスタ。
- 前記チャネルエリア(13)を覆うゲート酸化層(14)を更に含むことを特徴とする請求項1に記載のトランジスタ。
- 前記梁(16)が、ドープされたポリシリコンで作られることを特徴とする請求項1に記載のトランジスタ。
- 前記梁(16)が、金属、チタニウム、及び窒化ケイ素の三層であることを特徴とする請求項1に記載のトランジスタ。
- 前記ソース及びドレインエリア(11、12)が、前記チャネルエリア(13)の形と同一の湾曲した形を有することを特徴とする請求項1に記載のトランジスタ。
- 請求項1に記載の変形可能なゲートをもつトランジスタ(21)を含む発振回路において、前記トランジスタは、増幅器(20)に提供される電流を伝導し、前記増幅器の出力は、キャパシタ(C)を介して前記トランジスタの前記ゲートの梁へ接続される回路の出力と対応し、前記ゲートの梁は、バイアス電圧(Vpol)へ接続されることを特徴とする発振回路。
- チャネルエリアにより分けられたソース及びドレインエリアを基板(30)上にインプランテーションによって形成し、
前記基板に保護層(31)を付着させ、
少なくとも前記チャネルエリアの上部の前記保護層に開口部(32)を形成し、
事前に得られた構造体の化学機械研磨を行い、前記研磨のエッチング方法は、前記保護層を超えて前記基板をエッチングするような方法であって、くぼみ(33)が前記開口部の下の基板に形成され、前記保護層を取り除き、
基板上にゲート酸化層を形成し、
前記くぼみに第一の犠牲部分(36)を形成し、
第二の犠牲部分が前記第一の犠牲部分を覆うように、犠牲層を付着させてエッチングし、
前記第二の犠牲部分の上をまたがり、前記くぼみの両側の前記ゲート酸化層に位置する導電ゲートの梁(37)を形成し、
前記第一及び第二の犠牲部分を取り除く、
ことを特徴とする変形可能なゲートをもつトランジスタの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0452070A FR2875339B1 (fr) | 2004-09-16 | 2004-09-16 | Transistor mos a grille deformable |
FR0452070 | 2004-09-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006100819A true JP2006100819A (ja) | 2006-04-13 |
JP4954518B2 JP4954518B2 (ja) | 2012-06-20 |
Family
ID=34948406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005268454A Active JP4954518B2 (ja) | 2004-09-16 | 2005-09-15 | 変形可能なゲートをもつmosトランジスタ |
Country Status (6)
Country | Link |
---|---|
US (1) | US7304358B2 (ja) |
EP (1) | EP1637498B1 (ja) |
JP (1) | JP4954518B2 (ja) |
CN (1) | CN100483740C (ja) |
DE (1) | DE602005001245T2 (ja) |
FR (1) | FR2875339B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108378A (ja) * | 2004-10-05 | 2006-04-20 | Sony Corp | 共振トランジスタ及び通信装置 |
JP2010123840A (ja) * | 2008-11-21 | 2010-06-03 | Fuji Electric Holdings Co Ltd | 可動ゲート型電界効果トランジスタの製造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8217381B2 (en) | 2004-06-04 | 2012-07-10 | The Board Of Trustees Of The University Of Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
MY149475A (en) * | 2006-09-06 | 2013-08-30 | Univ Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
FR2918747A1 (fr) | 2007-07-12 | 2009-01-16 | St Microelectronics Sa | Microcapteur de pression |
US8704314B2 (en) | 2007-12-06 | 2014-04-22 | Massachusetts Institute Of Technology | Mechanical memory transistor |
US8434374B2 (en) | 2008-04-11 | 2013-05-07 | Indian Institute Of Science | Sub-threshold forced plate FET sensor for sensing inertial displacements, a method and system thereof |
CN102198925B (zh) * | 2010-03-25 | 2015-03-04 | 张家港丽恒光微电子科技有限公司 | Mems器件及其形成方法 |
WO2011162847A2 (en) * | 2010-03-31 | 2011-12-29 | Cornell University | Stress-based sensor, method and applications |
US8294184B2 (en) | 2011-02-23 | 2012-10-23 | Qualcomm Mems Technologies, Inc. | EMS tunable transistor |
RU2511203C2 (ru) * | 2012-07-31 | 2014-04-10 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" (МИЭТ) | Адаптивный датчик на основе чувствительного полевого прибора |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57104269A (en) * | 1980-12-19 | 1982-06-29 | Matsushita Electric Ind Co Ltd | Load detecting element |
JPH09321318A (ja) * | 1996-01-25 | 1997-12-12 | Motorola Inc | 可動ゲートを有する半導体素子 |
JPH10303414A (ja) * | 1997-04-24 | 1998-11-13 | Fuji Electric Co Ltd | 絶縁ゲート型半導体装置およびそれを用いた加速度センサ |
US6211558B1 (en) * | 1997-07-18 | 2001-04-03 | Kavlico Corporation | Surface micro-machined sensor with pedestal |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2827270B1 (fr) * | 2001-07-13 | 2004-01-02 | Centre Nat Rech Scient | Procede de fabrication de pieces microscopiques |
-
2004
- 2004-09-16 FR FR0452070A patent/FR2875339B1/fr not_active Expired - Fee Related
-
2005
- 2005-09-15 DE DE602005001245T patent/DE602005001245T2/de active Active
- 2005-09-15 CN CNB2005101040717A patent/CN100483740C/zh not_active Expired - Fee Related
- 2005-09-15 JP JP2005268454A patent/JP4954518B2/ja active Active
- 2005-09-15 EP EP05108509A patent/EP1637498B1/fr not_active Expired - Fee Related
- 2005-09-15 US US11/227,624 patent/US7304358B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57104269A (en) * | 1980-12-19 | 1982-06-29 | Matsushita Electric Ind Co Ltd | Load detecting element |
JPH09321318A (ja) * | 1996-01-25 | 1997-12-12 | Motorola Inc | 可動ゲートを有する半導体素子 |
JPH10303414A (ja) * | 1997-04-24 | 1998-11-13 | Fuji Electric Co Ltd | 絶縁ゲート型半導体装置およびそれを用いた加速度センサ |
US6211558B1 (en) * | 1997-07-18 | 2001-04-03 | Kavlico Corporation | Surface micro-machined sensor with pedestal |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108378A (ja) * | 2004-10-05 | 2006-04-20 | Sony Corp | 共振トランジスタ及び通信装置 |
JP2010123840A (ja) * | 2008-11-21 | 2010-06-03 | Fuji Electric Holdings Co Ltd | 可動ゲート型電界効果トランジスタの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100483740C (zh) | 2009-04-29 |
US20060054984A1 (en) | 2006-03-16 |
FR2875339A1 (fr) | 2006-03-17 |
US7304358B2 (en) | 2007-12-04 |
FR2875339B1 (fr) | 2006-12-08 |
DE602005001245D1 (de) | 2007-07-12 |
CN1773725A (zh) | 2006-05-17 |
JP4954518B2 (ja) | 2012-06-20 |
EP1637498B1 (fr) | 2007-05-30 |
DE602005001245T2 (de) | 2008-01-24 |
EP1637498A1 (fr) | 2006-03-22 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |