JP2006093275A - Vapor phase epitaxial method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial method capable of suppressing in-plane variation in sheet carrier concentration of a planar dope HEMT. <P>SOLUTION: In the vapor phase epitaxial method where a substrate 3 for growing semiconductor crystal is held on a susceptor 1 and spun for the susceptor 1, the susceptor 1 is heated and material gas and dilution gas are supplied onto the heated substrate 3 thus growing III-V compound semiconductor crystal having a planar dope layer, growth time of the planar dope layer for doping dopant single atom by interrupting growth is set integer times of single spinning time t of the substrate 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a vapor phase growth method for growing a III-V compound semiconductor crystal without variation by supplying a source gas on a heated and rotating substrate, and more particularly, a vapor phase growth method for growing a planar doped layer without in-plane variation. It is about.

  The present invention relates to a group III-V compound semiconductor crystal used for an electronic device such as a field effect transistor (FET) or a high electron mobility transistor (HEMT), by metal organic vapor phase epitaxy, molecular beam epitaxy, liquid phase epitaxy. The present invention can be applied to a technique for epitaxial growth using a method or the like, particularly an epitaxial growth method using a planar doping method.

  Compound semiconductors such as gallium arsenide (GaAs) and indium gallium arsenide (InGaAs) have a feature of higher electron mobility than silicon (Si). Taking advantage of this feature, GaAs and InGaAs are often used in devices that require high-speed operation and high-efficiency operation. A typical example is HEMT, which is used in a microwave amplifier for transmitting a mobile phone and a high-frequency amplifier for a receiving antenna for satellite broadcasting.

  A schematic structure of an HEMT epitaxial wafer is shown in FIG. The HEMT epitaxial wafer includes a buffer layer, an electron transit layer, a spacer layer, a carrier supply layer, and a contact layer that are crystal-grown on a semi-insulating substrate. The substrate is a base for single crystal growth. The buffer layer has a function of preventing deterioration of device characteristics due to residual impurities on the substrate surface and a function of preventing leakage current from the electron transit layer. The electron transit layer is a layer through which free electrons flow and needs to have high purity. The spacer layer functions to prevent free electrons in the electron transit layer from being ion-scattered by n-type impurities in the carrier supply layer. The carrier supply layer is doped with n-type impurities, and supplies the generated free electrons to the electron transit layer. As the growth method of the carrier supply layer, there are a uniform doping method in which an epitaxial layer is uniformly doped with n-type impurities and a planar doping method in which growth is interrupted and n-type impurity single atoms are doped. The contact layer is a layer for forming an electrode.

  Hereinafter, an epitaxial wafer for HEMT by the planar doping method will be described.

An example of the structure of an epitaxial wafer for HEMT by the planar doping method is shown in Table 1. Crystal growth is called epitaxial. The unit of thickness is nm (10 ⁻⁹ m), and the unit of carrier concentration is cm ⁻³ .

  The growth method of the HEMT epitaxial wafer shown in Table 1 will be described below.

  FIG. 3 shows a growth furnace used for vapor phase growth. The substrate 3 is set face down on a lower side called a susceptor. The susceptor 1 rotates in one direction during growth, and a source gas 6 directed from below to above flows under the susceptor 1 radially outward from the center of the susceptor, and is heated and revolved. It decomposes above and crystal grows on the substrate 3.

  In this growth furnace, a plurality of substrates 3 made of semiconductor wafers are arranged on a plate-like susceptor 1 that rotates about an axis 2 in a circumferential direction at a position slightly away from the center of the susceptor, and the surface of the susceptor 1 has a gas flow. A substrate heater (growth heater) 5 is disposed above the susceptor 1 on the back side of the substrate 3 and is supported toward the path 4 side. The heater 5 heats the susceptor 1 from the center of the susceptor. The apparatus is configured as a vapor phase growth apparatus that causes a source gas 6 to flow radially and epitaxially grows a semiconductor crystal on a heated substrate 3.

  The substrate 3 on which the epitaxial layer is grown is set on the susceptor 1 and heated in a growth furnace. When the source gas 6 is supplied into the growth furnace, the source gas 6 is decomposed by heat, and an epitaxial layer is grown on the substrate 3.

When growing i-GaAs as a raw material, trimethylgallium (Ga (CH ₃ ) ₃ ) as a Ga raw material and arsine (AsH ₃ ) as an As raw material are supplied to the substrate. In addition, there is triethylgallium (Ga (CH ₃ CH ₂ ) ₃ ) as another Ga raw material. Other As raw materials include trimethylarsenide (As (CH ₃ ) ₃ ) and tertiary butylarsine (TBA).

When growing i-type Al _0.25 Ga _0.75 As, Ga (CH ₃ ) ₃ , AsH ₃ , and Al source trimethylaluminum (Al (CH ₃ ) ₃ ) are supplied to the substrate. In addition, there is triethylaluminum (Al (CH ₃ CH ₂ ) ₃ ) as another Al raw material.

When growing i-type In _0.20 Ga _0.80 As, Ga (CH ₃ ) ₃ , AsH ₃ , and trimethylindium (In (CH ₃ ) ₃ ) as an In raw material are supplied to the substrate. In addition, triethylindium (In (CH ₃ CH ₂ ) ₃ ) is another In raw material.

When growing n-type GaAs, Ga (CH ₃ ) ₃ , AsH ₃ and n-type dopant are supplied to the substrate. Examples of the n-type dopant element include silicon (Si) and selenium (Se). There are monosilane (SiH ₄ ) and disilane (Si ₂ H ₆ ) as Si raw materials. Se raw material includes hydrogen selenide (H ₂ Se).

When a planar dope layer as a carrier supply layer is grown, a growth interruption is provided, and Si ₂ H ₆ and SiH ₄ are supplied to the substrate. However, AsH ₃ which is a group V raw material is supplied to prevent the surface of the epitaxial layer from being rough due to heat.

  Here, if the crystal is grown while the susceptor 1 is stationary, the thickness of the crystal becomes non-uniform. This is because the raw material gas is decomposed by heat, and the material is consumed more downstream and the crystal thickness becomes thinner. Therefore, by rotating the susceptor as described above, the thick portion on the upstream side and the thin portion on the downstream side with respect to the flow of the source gas are averaged, and the thickness of the crystal is made uniform. Usually, since the susceptor 1 rotates several tens to several hundreds during the growth of the crystal layer, the thickness of the crystal layer becomes uniform.

  However, since the spacer layer is very thin, for example, 3 nm, and the time for crystal growth of the spacer layer is short, there are cases where the susceptor 1 cannot rotate properly, such as half rotation and half rotation. In such a case, a difference in characteristics depending on the substrate setting position occurs.

  On the other hand, in order to make the time required for growing the spacer layer to be a natural number such as one rotation or two rotations of the susceptor 1, it is necessary to change the susceptor rotation number, change the raw material gas flow rate, etc. There is a problem in that productivity must be reduced because conditions must be examined.

Therefore, as a method of vapor phase growth of a group III-V compound semiconductor that can grow a thin film with a uniform thickness even for a short crystal layer such as a spacer layer, a single crystal layer is formed twice. It has been proposed that the growth start time is shifted by an odd number of times that the susceptor makes a half rotation (see Patent Document 1).
Japanese Patent Laid-Open No. 2001-19598

  However, Patent Document 1 discusses in-plane non-uniformity of each substrate due to the rotation of the susceptor, that is, the revolution of the substrate when viewed from the substrate, and does not discuss the influence of the rotation of the substrate.

  The present inventors have found that nonuniformity occurs in the sheet carrier concentration in the substrate surface due to the rotation of the substrate.

A substrate was set on a self-revolving type susceptor as shown in FIG. 2, and an HEMT epitaxial wafer having a structure as shown in Table 1 was produced. The sheet carrier concentration, which is an important characteristic of HEMT, was measured by the van der Pauw method. “Sheet carrier concentration” is the surface density of free electrons, and its unit is cm ⁻² .

  Table 2 shows the measurement result of the sheet carrier concentration when the time required for one rotation (autorotation) of the substrate according to the conventional technique is an arbitrary time.

  In the prior art, the time required for one rotation (autorotation) of the substrate is set as an arbitrary time. For this reason, as shown in Table 2, the sheet carrier concentration has in-plane variation, and when this variation becomes large, the characteristic variation of the HEMT device increases, yield decreases, and productivity decreases. As a cause of this in-plane variation, there is an in-plane variation of a planar dope layer which is a carrier supply layer.

  In particular, in the prior art, since the growth is interrupted for an arbitrary time and the n-type impurity monoatomic layer is doped, depending on the growth time, as shown in FIG. In some cases, the rotation is halfway, such as / 3 rotation, and the substrate cannot be rotated properly once. In such a case, the in-plane variation of the sheet carrier concentration becomes large.

  When the epitaxial layer is thick, it is possible to make the doping uniform because it rotates tens to hundreds of revolutions. However, if the growth time of the planar dope layer is excessively long, it is the same as increasing the growth interruption time, which may damage the channel layer and reduce the electron mobility. Therefore, we want to shorten the growth time of planar dope as much as possible. In addition, although the in-plane variation of the sheet carrier concentration can be improved by optimizing the temperature balance of the heater, there is a problem in that productivity must be reduced because growth conditions for that purpose must be studied.

  Accordingly, an object of the present invention is to provide a vapor phase growth method capable of solving the above-described problems and suppressing in-plane variations in the sheet carrier concentration of the planar-doped HEMT.

  In order to achieve the above object, the present invention is configured as follows.

  In the vapor phase growth method according to the first aspect of the present invention, a substrate on which a semiconductor crystal is grown is held on a susceptor, the substrate is rotated with respect to the susceptor, the susceptor is heated, and a source gas and a dilution are formed on the heated substrate. In a vapor phase growth method for growing a group III-V compound semiconductor crystal having a planar doped layer by supplying a working gas, the growth time of the planar doped layer in which the growth is interrupted and the impurity single atom is doped is changed. It is characterized by being an integral multiple of the time t for one rotation.

  In the vapor phase growth method according to the invention of claim 2, a substrate on which a semiconductor crystal is grown is held on a susceptor, the substrate is rotated relative to the susceptor, and the substrate is revolved by rotating the susceptor. In a vapor phase growth method in which a source gas and a diluting gas are supplied onto a heated substrate to grow a III-V group compound semiconductor crystal having a planar doped layer, the growth is interrupted to dope impurity single atoms The growth time of the planar doped layer is set to an integral multiple of the time t during which the substrate rotates once by rotation.

  According to a third aspect of the present invention, there is provided a vapor phase growth method in which a substrate on which a semiconductor crystal is grown is disposed on a plate-shaped susceptor, and a lower surface serving as a growth surface is held facing the gas flow path side. The substrate is revolved by rotating the susceptor, the susceptor is heated, the source gas and the diluting gas are allowed to flow radially from the central portion of the susceptor, and the planar doped layer is formed on the heated substrate III- In the vapor phase growth method for growing a group V compound semiconductor crystal, the growth time of the planar doped layer in which the growth is interrupted and doped with an impurity single atom is set to be an integral multiple of the time t during which the substrate rotates once. To do.

  The invention according to claim 4 is the vapor phase growth method according to claim 2 or 3, wherein a plurality of substrates are arranged in the circumferential direction at a position slightly away from the center of the susceptor, on the rotating plate-shaped susceptor. It is characterized by growing many sheets at the same time.

According to a fifth aspect of the present invention, in the vapor phase growth method according to any one of the first to fourth aspects, disilane (Si ₂ H ₆ ), monosilane (SiH ₄ ) is used as the n-type dopant raw material for the growth of the planar doped layer. ), Or hydrogen selenide (H ₂ Se).

<Key points of the invention>
In the prior art, since the time required for one rotation (rotation) of the substrate is set as an arbitrary time, as shown in Table 2, the in-plane variation of ± 3.6%, for example, is large in the HEMT sheet carrier concentration. Have

  The cause of this in-plane variation is the in-plane variation of the planar doped layer which is the carrier supply layer. Since the arbitrary growth time of the planar doped layer is short, the substrate is rotated half or half, or 1 + 1 / It is a fractional number of revolutions such as 3 revolutions, and the substrate cannot be properly rotated at an integral multiple of one revolution.

  Thus, when the in-plane variation of the sheet carrier concentration increases, the characteristic variation of the HEMT epitaxial wafer and the HEMT device increases, resulting in a decrease in yield and productivity.

  Further, although the in-plane variation of the sheet carrier concentration can be improved by optimizing the temperature balance of the heater, there is a problem in that productivity must be reduced because growth conditions for that purpose must be studied.

  In the present invention, the growth time of the planar doped layer for interrupting growth and doping impurity single atoms is set to an integral multiple of the time t for one rotation of the substrate by rotation, thereby suppressing in-plane variation of the planar doped layer, In-plane variation in the sheet carrier concentration of HEMT can be suppressed. Therefore, according to the present invention, it is possible to eliminate variations in the characteristics of the HEMT device, increase the production yield, and solve the above problems.

  In the present invention (claims 1 to 5), the planar doped layer means an epitaxial layer having a very short growth time, and not only the original planar doped layer but also other spacer layers having a very short growth time. Epitaxial layers such as are also included in this concept.

  According to the present invention, the following excellent effects can be obtained.

  In the vapor phase growth method of the present invention, the growth time of the planar doped layer for interrupting growth and doping impurity single atoms is set to an integral multiple of the time t for which the substrate rotates once, so that the planar doped layer has a predetermined conductivity type. Impurities can be uniformly doped in the surface.

  Therefore, when an epitaxial wafer for HEMT is manufactured using the vapor phase growth method of the present invention, the in-plane variation of the sheet carrier concentration can be suppressed. Also in the device, the yield and productivity can be improved.

  Hereinafter, the present invention will be described based on the illustrated embodiments.

  FIG. 3 shows the structure of a vapor phase growth apparatus to which the vapor phase growth method of the present invention is applied. As already described, in this vapor phase growth apparatus, a substrate 3 composed of a plurality of (six in this case) semiconductor wafers is disposed on a plate-shaped susceptor 1 in a circumferential direction at a position slightly away from the susceptor center. In addition, the substrate surface to be grown is supported by a so-called face-down method in which the surface of the substrate is directed to the gas flow path 4 side. On the back surface side of the substrate 3, a substrate heating heater 5 is provided above the susceptor 1, and the susceptor 1 is heated from the back surface side of the substrate 3 by the substrate heating heater 5.

  The susceptor 1 is provided with a counter plate 7 and a gas flow path 4 is formed between them. Then, the source gas 6 led from the lower source gas supply port 4b to the blowout port 4a provided at the center of the counter plate 7, that is, the source gas 6 supplied from the lower side to the upper side toward the susceptor central portion is supplied to the susceptor. The semiconductor crystal is epitaxially grown on the substrate 3 that flows radially from the central portion of the susceptor radially outward along the lower surface of the substrate 1 and is heated by the substrate heating heater 5.

  Reference numeral 2 denotes a susceptor rotating shaft that is rotationally driven by a first motor M1 (not shown), and the center of the susceptor 1 is fixed to the lower end thereof.

  The substrate 3 is held in a face-down manner at the bottom of a hollow cylindrical holder (not shown) that is rotatably supported with respect to the susceptor 1. When a second motor M2 (not shown) (not shown) is activated, the rotational force is transmitted to the holder, and the substrate 3 is rotated (spinned) relative to the susceptor 1.

  A method for growing the HEMT epitaxial wafer shown in Table 1 under the above apparatus will be described below. In this embodiment, the MOVPE method capable of fine growth control at the atomic level is employed as a means for epitaxial growth.

  A substrate on which an epitaxial layer is grown is set on the susceptor 1 and heated in a growth furnace. When the source gas is supplied into the growth furnace, the source gas is decomposed by heat, and an epitaxial layer is grown on the substrate.

As a buffer layer on a semi-insulating GaAs substrate, i-type GaAs (thickness 500 nm, carrier concentration 1 × 10 ¹⁵ cm ⁻³ or less), i-type Al _0.25 Ga _0.75 As (thickness 100 nm, carrier concentration 1 × 10 ¹⁶⁾ cm ⁻³ or less), i-type GaAs (thickness 100 nm, carrier concentration 1 × 10 ¹⁵ cm ⁻³ or less), i-type Al _0.25 Ga _0.75 As (thickness 100 nm, carrier concentration 1 × 10 ¹⁶ cm ⁻³ or less), i-type GaAs (thickness 100 nm, carrier concentration 1 × 10 ¹⁵ cm ⁻³ or less) is sequentially provided, and i-type In _0.20 Ga _0.80 As (thickness 20 nm, carrier concentration 1 × 10 ¹⁶ cm ⁻³ or less) as a channel layer. ). On top of that, i-type Al _0.50 Ga _0.50 As (thickness 5 nm, carrier concentration 1 × 10 ¹⁶ cm ⁻³ or less) is provided as a spacer layer. Furthermore, a planar doped layer (n-type dopant, carrier concentration 4 × 10 ¹² cm ⁻³ ) and an i-type Al _0.25 Ga _0.75 As layer (thickness 50 nm, carrier concentration 1 × 10 ¹⁶ ) functioning as a carrier supply layer. cm ⁻³ or less) was provided, and n-type GaAs (thickness 150 nm, carrier concentration 3 × 10 ¹⁸ cm ⁻³ ) was provided thereon as a contact layer.

When growing i-type GaAs as raw materials, Ga raw material Ga (CH ₃ ) ₃ (trimethylgallium) and As raw material arsine (AsH ₃ ) are supplied to the substrate. In addition, there is triethylgallium ((GaCH ₃ CH ₂ ) ₃ ) as another Ga raw material. Other As raw materials include trimethylarsenic (As (CH ₃ ) ₃ ) and tertiary butylarsine (TBA).

When growing i-type Al _0.25 Ga _0.75 As, Ga (CH ₃ ) ₃ , AsH ₃ , and Al source trimethylaluminum (Al (CH ₃ ) ₃ ) are supplied to the substrate. In addition, there is triethylaluminum (Al (CH ₃ CH ₂ ) ₃ ) as another Al raw material.

When growing i-type In _0.20 Ga _0.80 As, Ga (CH ₃ ) ₃ , AsH ₃ , and trimethylindium (In (CH ₃ ) ₃ ) as an In raw material are supplied to the substrate.

When growing n-type GaAs, Ga (CH ₃ ) ₃ , AsH ₃ and n-type dopant are supplied to the substrate. Examples of the n-type dopant element include Si and selenium (Se). There are monosilane (SiH ₄ ) and disilane (Si ₂ H ₆ ) as Si raw materials. Se raw material includes hydrogen selenide (H ₂ Se).

  In this embodiment, the growth time of the planar doped layer is set to an integral multiple of the time t for one rotation of the substrate in order to interrupt the growth and to uniformly dope the planar doped layer with n-type impurities in the plane. FIG. 1A shows an overview when the growth time of the planar doped layer is one time t that the substrate rotates once.

  If an arbitrary time is taken as in the prior art shown in FIG. 1B, the substrate is rotated halfway or half and 1 + 1/3 halfway through the substrate, and the n-type impurities are uniformly distributed in the surface. Inability to dope. However, as shown in FIG. 1A, by making the growth time of the planar doped layer an integral multiple of the time t for which the substrate rotates once (rotates), the substrate is rotated once during the growth of the planar doped layer. Since it is rotated twice, three times,..., N-type impurities can be uniformly doped in the surface.

<Example>
The present invention was applied to the HEMT epitaxial wafer shown in Table 1.

  The substrate temperature during growth is 660 ° C., the growth furnace pressure is 70 Torr, and the dilution gas is hydrogen. A semi-insulating GaAs substrate was used as the substrate.

Ga (CH ₃ ) ₃ and AsH ₃ were used for the growth of the i-type GaAs layer. The flow rate of Ga (CH ₃ ) ₃ is 70 cc / min. The flow rate of AsH ₃ is 250 cc / min.

The growth of the i-type Al _0.25 Ga _0.75 As layer uses Ga (CH ₃ ) ₃ , Al (CH ₃ ) ₃ and AsH ₃ , and their flow rates are 30 cc / min, 60 cc / min and 500 cc / min, respectively.

The growth of the i-type In _0.20 Ga _0.80 As layer uses Ga (CH ₃ ) ₃ , In (CH ₃ ) ₃ and AsH ₃ , and their flow rates are 40 cc / min, 150 cc / min and 500 cc / min, respectively.

The same Ga (CH ₃ ) ₃ , Al (CH ₃ ) ₃ , and AsH ₃ as the i-type Al _0.25 Ga _0.75 As layer were used for growing the i-type Al _0.50 Ga _0.50 As layer of the spacer layer, and their flow rates were 20 cc, respectively. / Min, 100 cc / min and 700 cc / min.

For the growth of the planar doped layer, Si ₂ H ₆ was supplied for an integral multiple of the time t = 4.6 seconds (three rotations here) for one rotation of the substrate. The flow rate of Si ₂ H ₆ is 125 cc / min. However, AsH ₃ was also supplied at 500 cc / min to prevent the surface of the epitaxial layer from being rough due to heat.

For the growth of the n-type GaAs layer, Si ₂ H ₆ was used in addition to Ga (CH ₃ ) ₃ and AsH ₃ used for the growth of i-type GaAs. The flow rate of Si ₂ H ₆ is 100 cc / min. The flow rates other than Si ₂ H ₆ are the same as in the i-type GaAs layer.

  Table 3 shows the measurement results of the sheet carrier concentration of the epitaxial wafer for HEMT grown under the above conditions.

  As shown in Table 3, in the case of this example (three times the time t for which the substrate rotates once, that is, 4.6 × 3 (rotation) = 13.8 seconds), the in-plane variation is ± 0.9. It can be seen that it is less than ± 3.6% of the prior art in Table 2 (arbitrary time: 5 × 3 (rotation) = 15 seconds in this example).

  When the HEMT epitaxial wafer as shown in Table 1 is manufactured using the conventional technique, the in-plane variation is as large as ± 3.6% as shown in the measurement results shown in Table 2. The cause of this in-plane variation is the in-plane variation of the planar doped layer that is the carrier supply layer. Since the arbitrary growth time of the planar doped layer is short, the substrate is rotated half or half, or 1 + 1/3 rotation. There is a problem that the substrate cannot be rotated properly. Thus, when the in-plane variation in the sheet carrier concentration increases, the characteristic variation of the HEMT epitaxial wafer and the HEMT device increases, resulting in a decrease in yield and productivity.

  In this embodiment, in order to uniformly dope the planar doped layer in-plane, the growth time of the planar doped layer in which the growth is interrupted and doped with an n-type impurity single atom is set to an integral multiple of the time t for one rotation of the substrate. . In this way, by setting the growth time to an integral multiple of the time t during which the substrate rotates once, the substrate rotates properly once, twice, three times,... Impurities can be uniformly doped in the surface.

  Therefore, when the HEMT epitaxial wafer shown in Table 1 is manufactured according to the present invention, the in-plane variation of the sheet carrier concentration can be suppressed to a very small ± 0.9% as shown in the measurement results shown in Table 3. Can be suppressed to ± 0.8%. Thus, by suppressing the in-plane variation of the sheet carrier concentration, not only the yield and productivity of HEMT epitaxial wafers but also the yield and productivity of HEMT devices can be expected.

<Other embodiments and modifications>
In the above embodiment, the growth of the planar doped layer of the HEMT epitaxial wafer has been described. However, the present invention can also be applied to other epitaxial layers having a very short growth time (for example, a spacer layer).

  Further, similarly to HEMT, the present invention can also be applied to an epitaxial layer of an FET, which is an electronic device, or a heterojunction bipolar transistor (HBT).

FIG. 1A is a schematic diagram illustrating a growth method according to the present invention, and FIG. 1B is a diagram illustrating a conventional growth method. It is a schematic diagram shown. It is the figure which showed the mode of rotation (autorotation) and revolution (rotation of a susceptor) of the board | substrate set to the susceptor. It is the structure figure which looked at the semiconductor growth apparatus (reactor) to which the growth method of the present invention was applied from the side. It is a longitudinal cross-sectional view which shows an example of the epitaxial wafer for HEMT which is going to manufacture with the growth method of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Susceptor 2 Susceptor rotating shaft 3 Board | substrate 4 Gas flow path 4a Outlet 4b Raw material gas supply port 5 Substrate heating heater 6 Raw material gas 7 Opposite plate

Claims (5)

A substrate on which a semiconductor crystal is grown is held on a susceptor, the substrate is rotated with respect to the susceptor, the susceptor is heated, a source gas and a dilution gas are supplied onto the heated substrate, and the III having a planar doped layer In a vapor phase growth method for growing a group V compound semiconductor crystal,
A vapor phase growth method characterized in that a growth time of a planar doped layer for interrupting growth and doping impurity single atoms is an integral multiple of a time t during which the substrate rotates once. A substrate on which a semiconductor crystal is grown is held on a susceptor, the substrate is rotated with respect to the susceptor, the substrate is revolved by rotating the susceptor, the susceptor is heated, and the source gas and dilution are heated on the heated substrate. In a vapor phase growth method of growing a group III-V compound semiconductor crystal having a planar doped layer by supplying a working gas,
A vapor phase growth method characterized in that a growth time of a planar doped layer for interrupting growth and doping impurity single atoms is an integral multiple of a time t during which the substrate rotates once. A substrate on which a semiconductor crystal is grown is disposed on a plate-shaped susceptor, and the lower surface, which is a growth surface, is held toward the gas flow path side, and the substrate is rotated with respect to the susceptor and the substrate is rotated by rotating the susceptor. In a vapor phase growth method in which a III-V compound semiconductor crystal having a planar doped layer is grown on a heated substrate by revolving, heating the susceptor, flowing a source gas and a dilution gas radially from the central portion of the susceptor ,
A vapor phase growth method characterized in that a growth time of a planar doped layer for interrupting growth and doping impurity single atoms is an integral multiple of a time t during which the substrate rotates once. The vapor phase growth method according to claim 2 or 3,
A vapor phase growth method characterized in that a plurality of substrates are disposed on the rotating plate-shaped susceptor in a circumferential direction at a position slightly away from the center of the susceptor, and a plurality of substrates are grown simultaneously. In the vapor phase growth method according to any one of claims 1 to 4,
A vapor phase growth method characterized in that disilane, monosilane, or hydrogen selenide is used as an n-type dopant material for the growth of the planar doped layer.

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