JP2006080470A5 - - Google Patents

Claims (8)

The first substrate contributes to bonding in the plastic deformation process with decreasing height, and is an electrode bump electrically connected to the conductor part, and the portion that contributes to bonding in the plastic deformation process with decreasing height. Reinforcing bumps formed on the insulator part, electrode bumps and stopper bumps lower than the reinforcing bumps are formed, and the second substrate is brought into contact with the corresponding electrode bumps to cause an atomic interaction between them. A portion that contributes to bonding, and is an electrode pad that is electrically connected to the conductor portion, and a portion that contributes to bonding by abutting against the corresponding reinforcing bump and causing an atomic interaction between the two, and an insulator Reinforcing pads formed on the part and stopper pads that abut the corresponding stopper bumps to define the bonding interval between the first substrate and the second substrate are formed. And said Polar bumps and electrode pads, the reinforcing bumps and the reinforcing pads, and the stopper bumps and the stopper pads are overlapped and aligned with each other, and the electrode bumps and the reinforcing bumps are deformed while applying a load. The electrode bump and the electrode pad and the reinforcement bump and the reinforcement pad are joined by deforming the electrode bump and the reinforcement bump until they are brought into contact with each other, abut, and subjected to a pressing force to each other, and the electrode between the two substrates is joined by the joining. A method for joining electrodes between substrates, characterized by joining together. The first substrate and the electrode joining method between substrates according to claim 1, wherein cleaning the bonding surfaces of the second substrate. 3. The inter-electrode bonding method between substrates according to claim 1, wherein in order to avoid bonding between bumps and pads that do not need to be bonded, the bumps are rendered nonfunctional. Electrode bumps that contribute to joining in the plastic deformation process where the height decreases and are electrically connected to the conductor part, and parts that contribute to joining in the plastic deformation process that reduces the height on the insulator part The formed reinforcing bump, the first substrate on which the electrode bump and the stopper bump lower than the reinforcing bump are formed, and the portion that abuts the corresponding electrode bump and causes an atomic interaction between them to contribute to the bonding The electrode pad that is electrically connected to the conductor portion and the portion that contributes to the bonding by abutting against the corresponding reinforcing bump and causing interatomic interaction between the two, formed on the insulator portion The second substrate formed with a reinforcing pad and a stopper pad that abuts against the corresponding stopper bump to define the bonding interval between the first substrate and the second substrate is the corresponding electrode bump and electrode pad. And the corresponding reinforcing bumps and the reinforcing pads are overlapped and aligned with each other and bonded together, and the bonding interval between the two substrates is brought into contact with the corresponding stopper bumps and the stopper pads. An electrode-to-substrate junction structure characterized in that the electrodes between the substrates are joined by the joining. 5. The inter-electrode bonding structure between substrates according to claim 4, wherein a cross-sectional area in a plane per one of the stopper bumps is larger than that of the electrode bump and the reinforcing bump. 6. The interelectrode bonding structure between substrates according to claim 4, wherein the bump and the pad are formed of a metal material having a face centered cubic crystal. 6. The inter-electrode joint structure between substrates according to claim 4, wherein the bump and the pad are made of a low melting point metal . 8. The interelectrode bonding structure between substrates according to claim 4, wherein each of the first substrate and the second substrate is a Si substrate.