JP2006078859A - Substrate for display device and display device using the substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an insulating substrate where the wiring of a narrow width and a thick film is formed in an optional plane shape, and a liquid crystal display device of low power consumption and a high aperture ratio using the insulating substrate. <P>SOLUTION: A bank 2 is provided on the substrate 1. The surface of the bank 2 is liquid-repellent to wiring material ink and the surface of the substrate 1 is lyophilic to the wiring material ink 3. By turning the wiring to at least one of the gate wiring and data wiring of a liquid crystal panel, the liquid crystal display device in which the wiring of the narrow width and the thick film is provided, the aperture ratio is high and power consumption is low can be provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a substrate for a display device and a display device using the substrate, and is particularly suitable for a substrate for a display device such as a liquid crystal panel having a thin film wiring formed using an ink jet method.

  In an active type flat panel display device that controls lighting for each pixel, a switching element such as a thin film transistor (hereinafter referred to as a thin film transistor) and a large number of pixels each having a pixel electrode driven by the thin film transistor are arranged on an insulating substrate. Arranged in rows and columns in a matrix. A plurality of gate wirings for supplying scanning signals for selecting a plurality of thin film transistors arranged in a matrix for each row, and a plurality of data wirings for supplying display data to the thin film transistors connected to the selected gate wirings And they are arranged in a matrix corresponding to the columns. These wirings are called so-called thin film wirings. A pixel is arranged at each intersection of each thin film wiring (gate wiring and data wiring). Some display devices have a thin film wiring necessary for the display method of the display device in addition to the gate wiring and the data wiring. The following description can be similarly applied to such a thin film wiring.

The gate wiring and data wiring are generally formed by photolithography (hereinafter abbreviated as photolithography), but recently, a wiring forming method using an ink jet has been proposed. The wiring technique using the ink jet is described in, for example, “Non-Patent Document 1”. Further, “Patent Document 1” discloses a film forming technique for forming a thin film by forming a groove on a substrate surface with a bank and filling the groove with a thin film material solution by an ink jet method.
“Nikkei Electronics” (issued 2002.6.17, pages 67 to 78) JP 2000-353594 A

When forming a thin film wiring having a narrow width on an insulating substrate constituting a display device, as described on page 78 of Non-Patent Document 1, the wiring forming portion is made lyophilic or wiring is formed. The insulating substrate side, such as providing a groove in the formation portion, is pretreated.

In the above-described conventional technology, it is difficult to form a thin film wiring having a sufficient film thickness because it is difficult to incorporate a large amount of wiring material ink if the wiring forming portion of the insulating substrate is made lyophilic. For this reason, it is difficult to reduce the resistance of the wiring and to reduce the cross capacitance between the gate wiring and the data wiring, which is one of the factors that limit the enlargement of the screen size. In addition, in the case where a groove is provided in the wiring forming portion of the insulating substrate, a hole larger than the wiring width is required for pouring the wiring material ink, so that the wiring layout is restricted and the wiring occupation ratio on the substrate surface is high. Become. As a result, it is difficult to obtain a display device that realizes high-definition circuit wiring and is configured with a low power consumption liquid crystal panel with a high aperture ratio.

An object of the present invention is to provide an insulating substrate for a display device in which a thin film wiring having a narrow width and a large film thickness is formed in an arbitrary layout. Another object of the present invention is to provide a display device comprising a liquid crystal panel having a low resistance, a low capacity, and a low power consumption by forming a thin film wiring having a narrow line width and a large film thickness. is there.

In order to achieve the above object of the present invention, the present invention forms at least an insulating substrate and a bank for forming a thin film wiring directly on the insulating substrate or on an interlayer insulating film. This bank is made of an insulating material and has side walls in contact with the wiring material ink for forming the thin film wiring along both sides of the extending direction of the formed thin film wiring.

  Then, the surface (side wall) of the insulating substrate or interlayer insulating film in contact with the wiring material ink is made lyophilic, and at least the surface of the resin bank in contact with the wiring material ink is made lyophobic. The portion of the bank in contact with the wiring material ink (the wall of the side wall of the bank facing the wiring material ink) is forward tapered and has a taper angle of 45 degrees or more, preferably vertical, and more preferably reverse taper. . As will be described later, the forward taper means that the wall surface is upward when viewed from the surface of the insulating substrate or interlayer insulating film. Therefore, the reverse taper means that the wall surface is downward.

  In order to achieve another object of the present invention, the insulating substrate is used as one substrate of a liquid crystal panel, and at least one of the gate wiring or the data wiring is a thin film wiring using the bank.

By doing so, an insulating substrate for a display device in which a thin film wiring having a narrow line width and a large film thickness is formed, and a display device constituted by a liquid crystal panel having a high aperture ratio and low power consumption can be realized.

Embodiments of a display device substrate and a liquid crystal display device using the substrate according to the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows one pixel of one substrate of a liquid crystal panel (first insulating substrate, thin film transistor substrate (also referred to as a TFT substrate, generally a glass substrate)) for explaining a first embodiment of a substrate for a display device according to the present invention. FIG. FIG. 1 shows a gate wiring 8, a data wiring 10, a transparent pixel electrode 40, and a thin film transistor (TFT) 12 among the components of the pixel. 2 shows a cross section taken along line HH ′ in FIG. 1 together with a color filter substrate (also referred to as a second insulating substrate or a CF substrate, generally a glass substrate) which is the other substrate. FIG.

The liquid crystal panel has a TFT substrate 42 and a CF substrate 43. The TFT substrate 42 includes a bank 2 formed of an insulating material on the inner surface of the glass substrate 1, a gate wiring 8, a silicon nitride (SiN) film 20, a semiconductor layer 21 composed of an intrinsic semiconductor 21b and an N-type semiconductor 21a, a data wiring 10, and protection. A film 23, a transparent pixel electrode 40 preferably made of ITO, and a TFT substrate alignment film 24 are included. The thin film transistor 12 includes a gate electrode 8a extending from the gate wiring 8, a semiconductor layer 21, a drain electrode 10a extending from the data wiring 10, and a source electrode 10b. Note that the drain electrode 10a and the source electrode 10b are interchanged during the display operation, but here, in order to avoid confusion, description will be made with the notation fixed as described above.

The CF substrate 43 has a color filter 26 partitioned by a black matrix 27 on the inner surface of the glass substrate 25, and a protective film 28, a transparent pixel electrode 41, and a CF substrate alignment film 29 on the upper layer. The CF substrate 43 is bonded to the TFT substrate 42, the liquid crystal layer 30 is sandwiched between the bonding gaps, the polarizing plate 31 is stacked on the outer surface of the TFT substrate 42, and the polarizing plate 32 is stacked on the outer surface of the CF substrate 43. Configured.

On the glass substrate 1 of the TFT substrate 42, as shown in FIG. 1, a plurality of gate wirings 8 (also referred to as scanning signal lines or horizontal signal lines) parallel to each other and the gate wirings 8 formed so as to intersect with each other are parallel to each other. Data wiring 10 (also referred to as a video signal line or a vertical signal line) is formed. An area surrounded by two adjacent data lines 10 and 10 adjacent to two adjacent gate lines 8 and 8 is one pixel area.

The liquid crystal panel of Example 1 is obtained by applying the display panel substrate of the present invention to the gate wiring 8. The gate wiring 8 can be manufactured by the following process. First, the surface of the glass substrate 1 constituting the TFT substrate 42 is treated with HMDS (hexamethyldisilazane) in order to improve the adhesion with the photosensitive resin. A photosensitive resin (in this case, a positive acrylic photosensitive resin) to be the bank 2 is applied to this with a thickness of 500 nm using a spin coating method. Here, the photosensitive resin may be a negative type.

Next, the wiring pattern is exposed by selective pattern exposure using a photomask and developed to dissolve and remove the photosensitive resin in the exposed portion. Thereafter, the formation of the bank 2 is completed by firing. Next, after removing the photosensitive resin residue of the portion developed and dissolved by the oxygen plasma treatment to make the exposed portion of the glass substrate 1 constituting the TFT substrate lyophilic, the plasma treatment using a fluorine-based gas (SF6) Liquid repellency is imparted to the surface of the bank 2 while maintaining the lyophilicity of the glass substrate 1. The fluorine-based gas used here may be CF4 or the like. By this step, a bank for forming a thin film wiring is obtained.

3A and 3B are explanatory diagrams of the bank formed on the display panel substrate according to the first embodiment of the present invention. FIG. 3A is a cross-sectional view and FIG. 3B is a plan view. The glass substrate 1 is a base for forming wiring using wiring material ink, and the bank 2 is a bank for limiting the wetting and spreading of the wiring material ink formed on the glass substrate 1. A thin film wiring is formed by dripping wiring material ink into the groove formed by the bank 2. Further, a range (indicated by a dotted line in the figure) surrounded by the taper portion of the bank 2 and the glass substrate 1 (glass inner surface) is referred to as a wiring forming portion 4 in the following description. The tapered portion of the bank 2 (wall surface facing the wiring material ink) is a forward taper, and the angle formed with the substrate surface is less than 45 degrees (here, about 30 degrees).

In the above-described forming step, liquid repellency was imparted after the bank 2 was formed, but when a photosensitive resin having liquid repellency was used as the bank 2 in advance, the liquid repellency was imparted by plasma treatment with a fluorine-based gas. No process is necessary. Further, the glass substrate 1 is formed of another inorganic material or organic material that is lyophilic with respect to the wiring material ink, or only the surface layer of a material with high liquid repellency is subjected to UV exposure treatment, oxygen plasma treatment, or fluorine. It may be lyophilic by surface treatment such as acid (HF) treatment.

Next, a method for manufacturing a thin film wiring using an ink jet method will be described. FIG. 4 is an explanatory diagram of the wetting and spreading when the wiring material ink 3 is discharged from the nozzle of the ink jet apparatus onto the glass substrate 1, and FIG. 4 (a) is a plan view showing the state immediately after the wiring material ink is dropped. It is sectional drawing (FIG. 4 (a-2)) along the AA 'line of a figure (FIG. 4 (a-1)) and FIG. 4 (a-1). 4 (b) is a plan view (FIG. 4 (b-1)) showing a state when the wiring material ink is spread after dripping and along the line BB 'in FIG. 4 (b-1). It is sectional drawing (FIG.4 (b-2)).

In FIG. 4, a wiring material ink containing 50 wt% of Ag fine particles is discharged in a volume of 4 pl to a wiring forming portion 4 constituted by a glass substrate 1 and a bank 2 to form a gate wiring 8 having a width of 20 μm. The droplet diameter of the wiring material ink 3 ejected at 4 pl is about 20 μm, but when landed on the glass substrate 1, the width becomes about 30 μm. As shown in FIG. 4A, the droplet forms a wiring with a width of 20 μm. Protrude from the club. However, since the bank 2 has liquid repellency with respect to the wiring material ink 3 and the glass substrate 1 has lyophilicity with respect to the wiring material ink 3, as shown in FIG. Due to the difference, the wiring material ink 3 is held and stored in the wiring forming portion 4 (FIG. 3).

Similarly, by repeating the ejection of the wiring material ink 3 while shifting the position along the extending direction of the bank on the wiring forming unit 4 (not shown), the wiring material inks that have landed in a shifted manner are formed at the wiring forming unit. The wiring material ink is filled in the wiring forming portion that is connected and narrower than the landing diameter.

In addition to Ag, the wiring material ink may contain Cu, Au, alloys thereof, etc., and the form of the ink is one in which metal fine particles are dispersed in a solvent, a metal complex, or a combination thereof. Things can be used. Further, in order to improve plasma resistance and suppress migration, a wiring material ink such as Ni or Co may be laminated as a cap metal for the Ag or Cu wiring described above to form the gate wiring 8.

In the ink jet method, it is possible to form a wiring with an arbitrary film thickness by optimizing the discharge pitch and the number of discharges according to the metal content in the wiring material ink 3 and the ink volume that can be included in the wiring forming portion. The volume of wiring material ink that can be included is the sum of the volume that can be held by the contact angle that the wiring material ink 3 makes with the bank 2 and the volume that can be held by the thickness of the bank 2.

In the glass substrate 1 of the first embodiment, the amount of ink that can be held by the thickness of the bank 2 increases, so that a thick wiring can be formed. In addition, the glass substrate 1 of Example 1 does not require a large-area lyophilic part for pouring the wiring material ink 3, and the thin film wiring can be freely laid out. Needless to say, when the wiring is formed on the wiring forming substrate of Example 1 using the ink jet method, a wiring having a width wider than the landing diameter of the wiring material ink can be formed.

After the wiring material ink 3 is ejected and dropped from the nozzle and spreads on the wiring forming portion, the glass substrate is baked to evaporate the solvent and the resin component contained in the wiring material ink 3 and melt the Ag particles. Put on. Further, by repeating the ink ejection from the nozzle of the ink jet apparatus and the baking process, the formation of the gate wiring 8 having a film thickness of, for example, 500 nm is completed. Note that these steps do not need to be repeated when the required film thickness can be obtained by a single inkjet discharge and firing step.

Next, a SiN film to be the gate insulating layer 20 and a semiconductor layer 21 made of an intrinsic semiconductor (amorphous Si) 21b and an N-type semiconductor (amorphous Si) 21a are formed by a plasma CVD apparatus. For example, the gate insulating layer 20 has a thickness of 350 nm, and the intrinsic semiconductor and the N-type semiconductor have a thickness of 140 nm and 40 nm, respectively. Here, using the photolithography process, the semiconductor layer 21 (stack of the intrinsic semiconductor and the N-type semiconductor) is patterned by etching (using SF6 gas).

Subsequently, for example, chromium (Cr) is formed to a thickness of 300 nm by DC sputtering. Data wiring 10 (FIGS. 1 and 2) is formed on the formed Cr film by a photolithography process and an etching process. Next, using the formed data wiring pattern as a mask, the N-type semiconductor 21a is patterned by dry etching (using SF6 gas). Further, a protective film 23 of SiN is formed with a thickness of 350 nm using a plasma CVD apparatus. The protective film 23 is dry-etched (using SF6 gas) by a photolithography process to form a through hole that exposes the data wiring 10 on the spot.

Here, a tin-added indium oxide (ITO) transparent pixel electrode 40 is sputtered to a thickness of 150 nm by a DC sputtering apparatus using In2O3-SnO2 as a sputtering target. A photolithography process is performed, and the transparent pixel electrode 40 is etched to produce a predetermined pattern. Thus, a TFT substrate of the liquid crystal display device is manufactured.

On the other hand, the CF substrate 43 as the counter substrate forms a black matrix 27 through a photolithography process and an etching process after a Cr film is formed on the glass substrate 25 by sputtering. Subsequently, a resist in which a red colorant is dispersed is applied by spin coating to a thickness of 1.5 μm, and red of the color filter 26 is formed by a photolithography process. By repeating the same process for green and blue, a color filter 26 of three colors red, green and blue is formed.

Further, after forming the protective film 28 made of acrylic resin with a thickness of 2 μm, the ITO film is sputtered to a thickness of 150 nm to form the common transparent electrode 41. In this way, a counter substrate is manufactured. The red, green, and blue color filters may be formed by an ink jet method or various printing methods regardless of the photo process.

Further, the alignment film 24 and the alignment film 29 are applied to the TFT substrate 42 and the CF substrate 43 manufactured in the above-described steps. After the alignment control ability is imparted by rubbing or the like and the spacer beads are dispersed, the TFT substrate 42 and the CF substrate 43 are bonded. The liquid crystal layer 30 is sealed by bonding. Then, a liquid crystal panel is completed through a process of attaching the polarizing plates 31 and 32. A peripheral circuit or the like is connected to the liquid crystal panel, and a liquid crystal display device is assembled by installing a backlight and integrating with a case.

The gate wiring 8 of the liquid crystal panel of Example 1 is formed using an ink jet method using the bank 2 formed on the glass substrate 1, and a wiring having a small width and a large film thickness is formed. Therefore, it is possible to realize a high aperture ratio in the pixel region, a low resistance and a low capacity of the gate wiring 8, and a liquid crystal display device with a high aperture ratio and low power consumption can be provided. Similarly, even when the bank is provided on the protective film 20 formed on the glass substrate and the data wiring 10 is formed, the same effect as in the case of the gate wiring 8 described above can be obtained.

FIG. 5 is a cross-sectional view illustrating a bank formed on a display panel substrate according to Embodiment 2 of the present invention. The angle formed by the glass substrate 1 of Example 1 described above and the taper portion of the bank 2 provided on the glass substrate 1 was less than 45 degrees (about 30 degrees). In Example 2, FIG. As shown in FIG. 4, the taper is forward tapered and formed at least 45 degrees or more (here, about 60 degrees). Even if the wall surface of the tapered portion is not a straight line as shown in FIG. 5B, the angle formed by the tangent of the portion where the bank 2 is in contact with the glass substrate 1 and the glass substrate is defined as the taper angle.

FIGS. 6A and 6B are diagrams illustrating wetting and spreading when the wiring material ink is dropped on the glass substrate of Example 2 of the present invention, FIG. 6A is a plan view, and FIG. 6B is FIG. It is sectional drawing in alignment with CC 'line | wire of (). In Example 2, when the wiring is formed on the glass substrate 1 using the inkjet method, as shown in FIG. 6A and FIG. 6B, the wiring on which the ink droplets ejected from the nozzles of the inkjet device landed. When the material ink 3 wets and spreads in the wiring forming portion (the same region as the wiring forming portion 4 described in FIG. 3), there is an effect that the material ink 3 spreads further along the edges of the glass substrate 1 and the bank 2. The effect of spreading this edge portion by wetting reduces the system energy (the sum of the interfacial energy of the wiring material ink 3, the glass substrate 1, the bank taper portion 5 and the atmosphere (air)), so that it becomes a more stable state. This is because the wiring material ink 3 changes its shape.

FIG. 7 is a cross-sectional view showing the plasma density when the wiring forming substrate of Example 2 of the present invention is subjected to a liquid repellent treatment. As shown in FIG. 7, when the liquid repellency is imparted by the fluorine-based plasma 6 after the bank 2 is formed, the bank taper portion 5 having an angle of 45 degrees or more per unit area compared to the upper surface of the bank 2. Since the density of the fluorine-based plasma 6 is lowered, the liquid repellency of the bank taper portion 5 is also lowered. Therefore, wetting and spreading after landing of the wiring material ink 3 is further improved.

  Therefore, when the wiring material ink is continuously ejected to the bank of the glass substrate of Example 2 to form the wiring, the wiring material inks landed adjacent to each other more than the above-described Example 1 are connected more favorably, and the wire breaks. There is an effect of reducing defects such as.

FIG. 8 is a plan view showing wetting and spreading when the wiring material ink is dropped on another example of the bank provided on the glass substrate in Example 2 of the present invention. As shown in FIG. 8, when forming a wiring composed of a wide portion and a narrowed portion, if an appropriate amount of wiring material ink 3 is ejected only to the wide portion of the bank 2 (FIG. 8A), Due to the good wetting and spreading, the wiring material ink 3 can be spread evenly on the narrowed portion (FIG. 8B), and a continuous thin film wiring can be obtained.

9A and 9B are plan views showing wetting and spreading when the wiring material ink is dropped on yet another example of the bank provided on the glass substrate in Example 2 of the present invention. As shown in FIG. 9A (a) or 9A (b), even in wiring formation in which a gate wiring protrusion is provided on a gate wiring and a protrusion serving as a drain electrode is provided on a data wiring, wiring material ink is directly applied to the protrusion. Even if it is not discharged, the wiring material ink can be filled as shown in FIG. 9B (a) or FIG. 9B (b) by good wetting and spreading.

10A and 10B are plan views showing wetting spread when the wiring material ink is dropped on yet another example of the bank provided on the glass substrate in the second embodiment of the present invention. As shown in FIG. 10A (a) and FIG. 10A (b), in the case of a bank in which an ink discharge area larger than the landing diameter of the wiring material ink is provided in one end of the wiring forming portion or in the wiring, the ink is discharged a plurality of times at the same location. By doing so, a narrow wiring can be formed as shown in FIGS. 10B (a) and 10 (b) due to the good wetting and spreading. In any case, even if the positional accuracy of the head and stage of the ink jet apparatus and the ejection stability are low, it is possible to form a wiring with a thin line portion.

  FIG. 11 is an explanatory diagram of Example 3 of the wiring formation substrate of Example 3 of the present invention, and shows the angle formed by the glass substrate 1 and the bank 2 of the wiring formation substrate of Examples 1 and 2 described above. As shown in FIG. 11 (a) or FIG. 11 (b), it is formed at substantially 90 degrees. FIGS. 12A and 12B are diagrams illustrating wetting and spreading when the wiring material ink is dropped on the wiring forming substrate according to the third embodiment of the present invention. FIG. 12A is a plan view, and FIG. It is sectional drawing which followed the DD 'line of 12 (a).

In the third embodiment, the wiring material approaches the edge portion of the bank 2, so that the system energy (the wiring material ink 3, the glass substrate 1, the bank taper portion 5, and the atmosphere (air) is higher than in the first and second embodiments. ) Of the interfacial energy). Therefore, as shown in the plan view (a) of FIG. 12 and the D-D ′ sectional view (b) thereof, the effect that the wiring material ink 3 spreads the edges of the glass substrate 1 and the bank 2 is increased. Furthermore, when liquid repellency is imparted by fluorine-based plasma treatment after the bank 2 is formed, the vertical portion of the bank is made liquid repellent by the plasma that wraps around. Therefore, compared with the upper surface of the bank 2, the plasma density per unit area is lowered, and the liquid repellency is also lowered. Therefore, wetting and spreading after ink landing is further improved.

Therefore, when the wiring material ink is continuously discharged to the bank (groove) provided on the glass substrate of Example 3 to form a wiring, the adjacent landing inks are more adjacent to each other than in the above-described Example 1 and Example 2. Has the effect of connecting better and reducing defects such as disconnection.

FIG. 13 is a cross-sectional view for explaining a fourth embodiment of the present invention. The taper portion between the glass substrate 1 and the bank 2 in the above-described first to third embodiments is reversely tapered as shown in FIG. 13 (a) or FIG. 13 (b). Here, the reverse taper means a state in which the upper part E of the bank 2 protrudes from the lower part F to the wiring forming part side. As shown in FIG. 13B, the case where the angle formed by the tangent line in the bank lower part F and the substrate is 90 degrees or less is reversed when the upper part E of the bank 2 protrudes from the lower part F to the wiring forming part side. Including taper. The reverse taper of the bank 2 is easier to produce by using a negative photosensitive resin, but may be produced by using a positive photosensitive resin.

  FIGS. 14A and 14B are diagrams for explaining the wetting and spreading when the wiring material ink is dropped on the glass substrate in Example 4. FIG. 14A is a plan view, and FIG. 14B is a diagram of FIG. Sectional drawing along a GG 'line | wire is shown.

In the fourth embodiment, the wiring material ink 3 approaches the edge portion of the bank 2, so that the system energy (the wiring material ink 3, the glass substrate 1, the bank taper portion 5, and the atmosphere is higher than in the first to third embodiments. (Sum of interface energy of (air)) can be reduced. Therefore, as shown in FIGS. 14A and 14B, the effect that the wiring material ink 3 spreads the edges of the TFT glass substrate 1 and the bank 2 is increased. In addition, when liquid repellency is imparted by fluorine-based plasma treatment after the bank 2 is formed, the reverse taper portion of the bank 2 is made liquid repellent only by plasma that slightly wraps around. Thus, the plasma density per unit area is low, and its liquid repellency is more difficult to be imparted than in Example 3. Therefore, wetting and spreading after landing of the wiring material ink is further improved.

Accordingly, when the wiring material ink is continuously discharged onto the glass substrate of Example 4 to form a wiring, the adjacent landing inks are more favorably connected to each other than the above-described Examples 1 to 3, and disconnection occurs. There is an effect of reducing defects such as.

  In the above embodiment, the bank has liquid repellency and the substrate has lyophilicity. However, when the width of the wiring forming portion is wider than the landing diameter of the wiring material ink, In applications where wiring material ink can be allowed to protrude from the wiring forming portion when the ball is landed, even if the bank does not have liquid repellency, the substrate is lyophilic, and the substrate is not lyophilic, it depends on the shape of the bank and the substrate. Needless to say, the wiring forming portion can be spread and the wiring can be formed.

  FIG. 15 is a block diagram illustrating a configuration example of a liquid crystal display device in which wiring of a TFT substrate for a liquid crystal panel to which the present invention is applied and peripheral circuits are connected. Note that the backlight is not shown in FIG. On the TFT substrate 42, the gate lines 10 and the data lines 8 are provided in a matrix form, and constitute a display area AR. FIG. 15 also shows a common transparent electrode (counter electrode) 7 formed on the color filter substrate (CF substrate) side. The gate wiring 10 is driven by a gate wiring driving circuit (scanning signal line driving circuit) 50. The data wiring 8 is driven by a data wiring driving circuit (video signal line driving circuit) 60.

A timing signal and a display data signal from the display control circuit 80 are supplied to the gate line driving circuit 50 and the data line driving circuit 60, and a required voltage is applied from the power supply circuit 70. The display control circuit 80 receives the display signal from the external signal source 90 and generates the timing signal and the display data signal. A common electrode voltage is supplied to the common transparent electrode 7 provided on the CF substrate via a connection terminal Vcom provided on the TFT substrate 42.

The glass substrate described above is not only applied to the wiring formation of a TFT substrate for a liquid crystal panel, but can also be applied to the wiring formation of organic EL and other similar display device panels and other electronic devices.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view of the vicinity of one pixel of one substrate of a liquid crystal panel for explaining Embodiment 1 of a display device substrate according to the present invention. It is sectional drawing which shows the cross section cut | disconnected along H-H 'of FIG. 1 with the color filter board | substrate which is the other board | substrate. It is explanatory drawing of the bank formed in the board | substrate for display panels of Example 1 of this invention. It is explanatory drawing of the wetting spread when wiring material ink is discharged from the nozzle of an inkjet apparatus on a glass substrate, and is dripped. It is sectional drawing explaining the bank formed in the board | substrate for display panels of Example 2 of this invention. It is a figure explaining the wetting spread when wiring material ink is dripped at the glass substrate of Example 2 of this invention. It is sectional drawing which shows the plasma density at the time of carrying out the liquid repellent process to the wiring formation board | substrate of Example 2 of this invention. It is a top view which shows the wetting spread when wiring material ink is dripped at the other example of the bank with which the glass substrate in Example 2 of this invention was equipped. It is a top view which shows the wetting spread when wiring material ink is dripped at the further another example of the bank with which the glass substrate in Example 2 of this invention was equipped. It is a top view which shows the wetting spread when wiring material ink is dripped at the further another example of the bank with which the glass substrate in Example 2 of this invention was equipped. It is a top view which shows the wetting spread at the time of dripping wiring material ink to the further another example of the bank with which the glass substrate in Example 2 of this invention was equipped. It is a top view which shows the wetting spread at the time of dripping wiring material ink to the further another example of the bank with which the glass substrate in Example 2 of this invention was equipped. It is explanatory drawing of Example 3 of the wiring formation board | substrate of Example 3 of this invention. It is a figure explaining the wetting spread when wiring material ink is dripped at the wiring formation board | substrate in Example 3 of this invention. It is sectional drawing explaining Example 4 of this invention. It is a figure explaining the wetting spread when wiring material ink is dripped at the glass substrate in Example 4 of this invention. It is a block diagram explaining the structural example of the liquid crystal display device which connected the wiring and peripheral circuit of the TFT substrate for liquid crystal panels to which this invention was applied.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Glass substrate (thin-film transistor substrate side) 2, ... Bank, 3 ... Wiring material ink, 4 ... Wiring formation part, 5 ... Bank taper part, 6 ... ··· Fluorine-based plasma, 8 ··· Gate wiring, 10 ··· Data wiring, 12 ··· Thin film transistor (TFT), 20 ··· SiN film, 21 ··· Semiconductor layer, 21a · ... n-type semiconductor, 21b .... intrinsic semiconductor, 23 ... protective film, 24 ... alignment film, 25 ... glass substrate (color filter substrate side), 26 ... Color filter 27 ... Black matrix 28 ... Protective film 29 ... Orientation film 30 ... Liquid crystal layer 31 ... Polarizing plate (thin film transistor substrate side) 32 ... Polarizing plate (color filter substrate side), 40 ... Transparent pixel electrode , 41 ... common transparent electrode (counter electrode), 42 ... TFT substrate, 43 ... CF substrate.

Claims (11)

A substrate for a display device having a thin film wiring formed by applying a wiring material ink directly on an insulating substrate or on an interlayer insulating layer formed on the insulating substrate,
A display device substrate comprising a bank having a side wall in contact with the wiring material ink for forming the thin film wiring along both sides of the thin film wiring formed on the insulating substrate or the interlayer insulating layer.   2. The display device substrate according to claim 1, wherein a portion of the resin bank in contact with the wiring material ink has a forward taper and an angle of 45 degrees or more with respect to the substrate.   The display device substrate according to claim 1, wherein a surface of the side wall of the bank in contact with the wiring material ink is substantially perpendicular to the insulating substrate.   2. The wiring forming substrate according to claim 1, wherein a surface of the side wall where the bank is in contact with the wiring material ink has a reverse taper.   The surface of the bank having the side wall has liquid repellency with respect to the wiring material ink, and the surface of the substrate has lyophilicity with respect to the wiring material ink. A substrate for a display device according to claim 1. A plurality of gate wirings extending in one direction and arranged in parallel in the other direction orthogonal to the one direction, and a plurality of gate wirings extending in the other direction intersecting the plurality of gate wirings and arranged in parallel in the one direction A first insulating substrate in which a plurality of pixels each having a thin film transistor and a pixel electrode formed at each intersection of the data wiring, the plurality of gate wirings, and the plurality of data wirings are arranged in a matrix; and the first insulating substrate And a liquid crystal panel having a liquid crystal layer sealed in the bonding gap between the first insulating substrate and the second insulating substrate. ,
The wiring material for forming at least one thin film wiring of the plurality of gate wirings and the plurality of data wirings along both sides of the thin film wiring formed on the insulating substrate or the interlayer insulating layer A display device comprising a bank having a sidewall in contact with ink.   The display device according to claim 6, wherein the gate wiring is directly formed on the insulating substrate.   The display device according to claim 6, further comprising at least one insulating film covering the gate wiring, wherein the data wiring is formed on the insulating film.   The liquid crystal display device according to claim 6, further comprising a counter electrode and a plurality of color filters on an inner surface of the second insulating substrate.   The display device according to claim 6, further comprising an alignment film at an interface between the first insulating substrate and the liquid crystal layer on the bonded inner surface of the second insulating substrate. The display device according to claim 6, further comprising a polarizing plate on each outer surface of the first insulating substrate and the second insulating substrate.

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