JP2006065308A5 - - Google Patents

Download PDF

Info

Publication number
JP2006065308A5
JP2006065308A5 JP2005212016A JP2005212016A JP2006065308A5 JP 2006065308 A5 JP2006065308 A5 JP 2006065308A5 JP 2005212016 A JP2005212016 A JP 2005212016A JP 2005212016 A JP2005212016 A JP 2005212016A JP 2006065308 A5 JP2006065308 A5 JP 2006065308A5
Authority
JP
Japan
Prior art keywords
transistor
light emitting
emitting element
potential
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005212016A
Other languages
Japanese (ja)
Other versions
JP2006065308A (en
JP5322343B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2005212016A priority Critical patent/JP5322343B2/en
Priority claimed from JP2005212016A external-priority patent/JP5322343B2/en
Publication of JP2006065308A publication Critical patent/JP2006065308A/en
Publication of JP2006065308A5 publication Critical patent/JP2006065308A5/ja
Application granted granted Critical
Publication of JP5322343B2 publication Critical patent/JP5322343B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (9)

発光素子と、
前記発光素子を駆動するための第1のトランジスタと、
前記第1のトランジスタを制御する第2のトランジスタと
記第1のトランジスタのゲーを、前記発光素子が非発光となる電位とする手段と、を有し、
前記第2のトランジスタがオンとなり、逆方向電圧を印加した後順方向電圧を印加するときに、前記第1のトランジスタのゲートは電気的に非浮遊状態になることを特徴とする発光装置。
A light emitting element;
A first transistor for driving the light emitting element;
A second transistor for controlling the first transistor ;
The gate of the previous SL first transistor, have a, and means for a potential the light emitting element emits no light,
Said second transistor is turned on, when applying a forward voltage after a reverse voltage is applied, gate of said first transistor is a light-emitting device characterized by comprising electrically in a non-floating state.
発光素子と、
前記発光素子を駆動するための第1のトランジスタと、
前記第1のトランジスタを制御する第2のトランジスタと
記第1のトランジスタのゲーを、前記発光素子が非発光となる電位とする手段と、を有し、
前記第2のトランジスタがオンとなり、前記発光素子が有する陽極の電位と、陰極の電位とが反転した後もとに戻るときに、前記第1のトランジスタのゲートは電気的に非浮遊状態になることを特徴とする発光装置。
A light emitting element;
A first transistor for driving the light emitting element;
A second transistor for controlling the first transistor ;
The gate of the previous SL first transistor, have a, and means for a potential the light emitting element emits no light,
Said second transistor is turned on, the potential of the anode in which the light emitting element has, when the cathode potential is returned to the original after inversion, gate of said first transistor in an electrically non-floating state the light emitting device characterized by comprising.
請求項1又は2において、In claim 1 or 2,
前記第1のトランジスタのゲートを、前記発光素子が非発光となる電位とする手段は、前記第2のトランジスタがオンとなっているとき、前記発光素子が非点灯となる信号が入力された信号線であることを特徴とする発光装置。The means for setting the gate of the first transistor to a potential at which the light emitting element does not emit light is a signal in which a signal to turn off the light emitting element is input when the second transistor is on. A light emitting device characterized by being a line.
発光素子と、
前記発光素子を駆動するための第1のトランジスタと、
前記第1のトランジスタを制御する第2のトランジスタと、を有し、
前記発光素子へ逆方向電圧を印加後、順方向電圧を印加するとき、前記第1のトランジスタのゲーを電気的に非浮遊状態とし、且つ前記第1のトランジスタのゲーを、前記発光素子が非点灯となる電位とすることを特徴とする発光装置の駆動方法。
A light emitting element;
A first transistor for driving the light emitting element;
A second transistor for controlling the first transistor;
After applying a reverse voltage to the light emitting element, when applying a forward voltage, said gate of first transistor electrically a non-floating state, and the gate of said first transistor, said light emitting element A driving method of a light-emitting device, characterized in that the potential is set to be non-lighting.
発光素子と、
前記発光素子を駆動するための第1のトランジスタと、
前記第1のトランジスタを制御する第2のトランジスタと、を有し、
前記発光素子へ順方向電圧を印加し、前記発光素子へ逆方向電圧を印加し、前記逆方向電圧を印加後、再び順方向電圧を印加するとき、前記第1のトランジスタのゲーを電気的に非浮遊状態とし、且つ前記第1のトランジスタのゲーを、前記発光素子が非点灯となる電位とすることを特徴とする発光装置の駆動方法。
A light emitting element;
A first transistor for driving the light emitting element;
A second transistor for controlling the first transistor;
Wherein the forward voltage is applied to the light emitting element, the reverse voltage is applied to the light emitting element, after application of the reverse voltage, when applying a forward voltage again, electrically the gate of said first transistor non-buoyant state, and and the gate of said first transistor, a driving method of a light-emitting device, wherein the light emitting element to a potential to be a non-lighting on.
請求項4又は5において、
前記逆方向電圧を印加する期間は、逆方向電圧を印加する前に全走査線をオンとする期間を有することを特徴とする発光装置の駆動方法。
In claim 4 or 5 ,
The period for applying the reverse voltage includes a period for turning on all scanning lines before applying the reverse voltage.
請求項において、
前記全走査線をオンとする期間の前に、消去期間を有することを特徴とする発光装置の駆動方法。
In claim 6 ,
A driving method of a light-emitting device, characterized by having an erasing period before a period during which all the scanning lines are turned on.
請求項6又は7において、
前記発光素子へ逆方向電圧を印加後、前記走査線をオフとする期間を有することを特徴とする発光装置の駆動方法。
In claim 6 or 7 ,
After applying a reverse voltage to the light emitting element, a driving method of a light-emitting device characterized by having a period of turning off the entire scan line.
発光素子と、
前記発光素子を駆動するための第1のトランジスタと、
前記第1のトランジスタを制御する第2のトランジスタと、を有し、
前記発光素子が有する陽極の電位を、前記発光素子が有する陰極の電位より高くし、前記発光素子が有する陽極の電位を、前記発光素子が有する陰極の電位より低くし、再び前記発光素子が有する陽極の電位を、前記発光素子が有する陰極の電位より高くするとき、前記第1のトランジスタのゲーを電気的に非浮遊状態とし、且つ前記第1のトランジスタのゲーを、前記発光素子が非点灯となる電位とすることを特徴とする発光装置の駆動方法。
A light emitting element;
A first transistor for driving the light emitting element;
A second transistor for controlling the first transistor;
The anode potential of the light emitting element is made higher than the cathode potential of the light emitting element, the anode potential of the light emitting element is made lower than the cathode potential of the light emitting element, and the light emitting element has again. the potential of the anode, when higher than the cathode potential of the light emitting element has, a gate of said first transistor and electrically non-floating state, and the gate of said first transistor, said light emitting element A driving method of a light-emitting device, wherein the potential is set to non-lighting.
JP2005212016A 2004-07-30 2005-07-22 Light emitting device and driving method thereof Expired - Fee Related JP5322343B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005212016A JP5322343B2 (en) 2004-07-30 2005-07-22 Light emitting device and driving method thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004223024 2004-07-30
JP2004223024 2004-07-30
JP2005212016A JP5322343B2 (en) 2004-07-30 2005-07-22 Light emitting device and driving method thereof

Publications (3)

Publication Number Publication Date
JP2006065308A JP2006065308A (en) 2006-03-09
JP2006065308A5 true JP2006065308A5 (en) 2008-07-10
JP5322343B2 JP5322343B2 (en) 2013-10-23

Family

ID=36111804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005212016A Expired - Fee Related JP5322343B2 (en) 2004-07-30 2005-07-22 Light emitting device and driving method thereof

Country Status (1)

Country Link
JP (1) JP5322343B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101191452B1 (en) 2006-06-29 2012-10-16 엘지디스플레이 주식회사 Data driver and Light-Emitting Display comprising the same
JP2013104908A (en) * 2011-11-10 2013-05-30 Panasonic Corp Display device and method of controlling the same
WO2013172220A1 (en) 2012-05-18 2013-11-21 Semiconductor Energy Laboratory Co., Ltd. Pixel circuit, display device, and electronic device
KR101486038B1 (en) 2012-08-02 2015-01-26 삼성디스플레이 주식회사 Organic light emitting diode display

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3696116B2 (en) * 2000-04-18 2005-09-14 株式会社半導体エネルギー研究所 Light emitting device
JP3736399B2 (en) * 2000-09-20 2006-01-18 セイコーエプソン株式会社 Drive circuit for active matrix display device, electronic apparatus, drive method for electro-optical device, and electro-optical device
JP3810724B2 (en) * 2001-09-17 2006-08-16 株式会社半導体エネルギー研究所 LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE
JP3810725B2 (en) * 2001-09-21 2006-08-16 株式会社半導体エネルギー研究所 LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE
JP2004157467A (en) * 2002-11-08 2004-06-03 Tohoku Pioneer Corp Driving method and driving-gear of active type light emitting display panel
JP2004233801A (en) * 2003-01-31 2004-08-19 Tohoku Pioneer Corp Method of driving light emitting unit

Similar Documents

Publication Publication Date Title
JP2002333862A5 (en)
JP2006330223A5 (en)
JP2009271200A5 (en)
JP2003255895A5 (en)
JP2007108689A5 (en)
JP2007522492A5 (en)
JP2011112724A5 (en)
TW200727260A (en) Active matrix display apparatus and driving method therefor
JP2018502335A5 (en)
EP1580722A3 (en) Pixel circuit
JP2006285116A5 (en)
EP1806724A3 (en) Semiconductor device, display device and electronic device
EP2161706A3 (en) Pixel circuit, light emitting display device and driving method thereof
JP2011520139A5 (en)
JP2007140490A5 (en)
JP2003223138A5 (en)
WO2008087801A1 (en) Display and its drive method
JP2007179041A5 (en)
JP2010044250A5 (en)
JP2005031598A5 (en)
JP2006235609A5 (en)
JP2009069552A (en) Display device and driving method of display device
JP2006065308A5 (en)
JP2006011024A5 (en)
EP2085958A3 (en) Light emitting device