JP2006054496A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem of semiconductor devices equipped with semiconductor elements of printed boards, ceramic substrates, and flexible sheets etc. as increase in thickness of supporting substrates causes the increase in the size of the semiconductor device and results in the structure from which heat of the semiconductor elements built in the device cannot be easily radiated. <P>SOLUTION: After isolation grooves 14 are made in a conductive foil 60, circuit elements are mounted and insulation resin 10 is coated on the conductive foil 60 as a supporting substrate. This is reversed and the conductive foil with a supporting substrate of the insulation resin 10 is polished to isolate conductive paths 11. This method provides the semiconductor device 13 with the conductive paths 11 and semiconductor chip 12 backed by the insulation resin 10 without using a supporting substrate. Moreover, since the semiconductor chip 12 is fixed to be thermally connected to a first conductive path 11A, heat of the semiconductor chip 12 is radiated to the outside. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device in which wiring is extended from the outside of a semiconductor chip to the back surface of the semiconductor chip and an external connection electrode is formed on the back surface of the semiconductor chip, and a manufacturing method thereof. .

  In recent years, IC packages are increasingly used in portable devices and small / high-density mounting devices, and conventional IC packages and their mounting concepts are about to change drastically. Details are described in, for example, Non-Patent Document 1 below.

  FIG. 10 employs a flexible sheet 50 as an interposer substrate, and a copper foil pattern 51 is bonded onto the flexible sheet 50 via an adhesive. An IC chip 52 is fixed to the copper foil pattern 51, and bonding pads 53 are formed around the IC chip. A solder ball connection pad 54 is formed through a wiring formed integrally with the bonding pad 53, and a solder ball 55 is formed on the solder ball connection pad 54.

The back side of the solder ball connecting pad 54 is provided with an opening 56 in which a flexible sheet is opened, and a solder ball 55 is formed through the opening 56. The flexible sheet 50 is used as a substrate and the whole is sealed with an insulating resin 58.
Special issue on electronic materials (September 1998, page 22) "CSP technology and mounting materials and equipment that support it"

  However, the point that the whole is sealed with the insulating resin 58, the back surface of the IC chip 52 is provided with the flexible sheet 50, and the heat conduction path made of a material with good heat conduction is the metal thin wire 57, Due to the fact that it consists of the copper foil pattern 51 and the solder balls 55, the above-described package has a structure that cannot sufficiently dissipate heat during driving. Therefore, there is a problem that the temperature of the IC chip rises at the time of driving, and the driving current cannot sufficiently flow.

  Further, due to the difference in thermal expansion coefficient between the insulating resin 58 and the IC chip 52, a contraction force acts on the insulating resin 58 due to a temperature difference from the melting temperature (or curing temperature) of the insulating resin to cooling to room temperature. When cooled to room temperature due to such shrinkage force, the edge of the package is lifted, the external dimensions are changed, the level of the package cannot be maintained, and there is a problem that unexpected trouble occurs when mounting on the mounting board. It was.

  The semiconductor device of the present invention seals the conductive path and the circuit element with a conductive path, a circuit element electrically connected to the conductive path, and at least a back surface of the conductive path exposed to the outside. An insulating resin, and the back surface of the conductive path protrudes outside the insulating resin.

  Furthermore, the semiconductor device according to the present invention includes a semiconductor element, a bonding pad electrically connected to the semiconductor element through a thin metal wire, and at least a back surface of the bonding pad exposed to the outside. And an insulating resin that seals the circuit element, and the back surface of the bonding pad protrudes more outward than the insulating resin.

  The method for manufacturing a semiconductor device according to the present invention includes a step of preparing a conductive foil having a conductive path formed in a convex shape by forming a separation groove on the surface, and electrically connecting a circuit element to the conductive path. A step of forming an insulating resin so that the circuit element is covered and filled in the separation groove, and the back surface of the conductive foil corresponding to the separation groove is selectively removed, And a step of separating the conductive paths from each other in a state in which a back surface of the path protrudes to the outside from the insulating resin.

  As is apparent from the above description, in the present invention, since the first conductive path 11A is made of a material having excellent thermal conductivity, the size thereof may be smaller than that of the semiconductor chip. Accordingly, an empty space is generated between the first conductive path and the second conductive path. Therefore, the third conductive path having a size larger than that of the second conductive path can be arranged in this empty space.

  Further, since the third conductive path is arranged surrounded by the second conductive path arranged in a ring shape, the connection portion is caused by the difference in thermal expansion coefficient between the mounting substrate and the semiconductor device fixed to the mounting substrate. Even if a stress is applied, the stress is difficult to act on the fixed portion between the electrode formed on the mounting substrate side and the third conductive path.

  A plurality of conductive paths electrically separated by the separation grooves; a semiconductor chip fixed on the desired conductive path; and the conductive paths that cover the semiconductor chip and are filled in the separation grooves between the conductive paths. By providing an insulating resin that exposes only the back surface of the substrate and supports it integrally, a circuit device that is configured with the minimum necessary conductive paths and insulating resin and that does not waste resources. Therefore, it is possible to realize a circuit device in which there are no extra components until completion and the cost can be significantly reduced. Further, by optimizing the coating thickness of the insulating resin and the thickness of the conductive foil, it is possible to realize a circuit device that is extremely reduced in size, thickness, and weight.

  Further, since only the back surface of the conductive path is exposed from the insulating resin, the back surface of the conductive path can be immediately used for connection to the outside, and there is an advantage that a support substrate having a conventional structure as shown in FIG. 10 can be dispensed with.

  In addition, since the semiconductor chip is directly fixed to the conductive path and the back surface of the conductive path is exposed, heat generated from the circuit element can be directly transferred to the mounting substrate via the conductive path. In particular, this heat dissipation can improve the driving capability of the semiconductor chip.

  In addition, in this semiconductor device, when the surface of the separation groove and the surface of the conductive path have a flat surface that is substantially coincident, the semiconductor device itself can be moved horizontally as it is, so that the correction of lead misalignment is possible. It becomes extremely easy.

  In addition, when a curved structure is formed on the side surface of the conductive path, an anchor effect can be generated, and warping and disconnection of the conductive path can be prevented.

First Embodiment Explaining Semiconductor Device First, the structure of a semiconductor device of the present invention will be described with reference to FIG. 1A is a plan view of the semiconductor device, and FIG. 1B is a cross-sectional view taken along line AA.

  In FIG. 1, conductive paths 11 </ b> A to 11 </ b> D embedded in an insulating resin 10 are provided, and the first conductive path 11 </ b> A serves as a die pad, on which a semiconductor chip 12 is fixed, and the insulating resin 10. A semiconductor device 13 configured to support the conductive paths 11A to 11D is shown. The side surfaces of the conductive paths 11A to 11D may have a curved structure. See FIG. 4 for details.

  This structure is composed of three materials of a semiconductor chip 12, a plurality of conductive paths 11A to 11D, and an insulating resin 10 that embeds the conductive paths 11A to 11D, and the insulating resin is interposed between the conductive paths 11A to 11D. A separation groove 14 filled with 10 is provided. The conductive paths 11A to 11D are supported by the insulating resin 10.

  As the insulating resin, a thermosetting resin such as an epoxy resin, a thermoplastic resin such as a polyimide resin or polyphenylene sulfide can be used. As the insulating resin, any resin can be adopted as long as it is a resin that can be hardened using a mold, a resin that can be coated by dipping or coating. As the conductive paths 11A to 11D, a conductive foil mainly made of Cu, a conductive foil mainly made of Al, or a conductive foil made of an alloy such as Fe-Ni can be used. Of course, other conductive materials are possible, and a conductive material that can be etched and a conductive material that evaporates with a laser are particularly preferable.

  In the present invention, since the insulating resin 10 is also filled in the separation groove 14 and the conductive paths 11A to 11D are supported by the insulating resin 10, the conductive paths 11A to 11D can be prevented from coming off. . Further, by applying dry etching or wet etching as etching, non-anisotropic etching is performed, so that the side surface of the conductive path 11 has a curved structure 15 and an anchor effect can be generated as shown in FIG. it can. As a result, it is possible to realize a structure in which the conductive paths 11 </ b> A to 11 </ b> D do not come off from the insulating resin 10.

  Moreover, the first conductive path 11A is exposed on the back surface of the package made of the insulating resin 10, and is directly fixed to the back surface of the semiconductor chip 12 with a brazing material or the like. For example, when the first conductive path 11A is fixed to the electrode on the mounting substrate, the heat generated from the semiconductor chip 12 can be radiated to the outside through the first conductive path 11A, and the temperature rise of the semiconductor chip 12 can be prevented. Accordingly, the drive current of the semiconductor chip 12 can be increased accordingly.

  The connecting means of the semiconductor chip 12 is a metal thin wire 16 and a brazing material 17 such as solder (or a conductive paste such as an Ag paste, a conductive film or an anisotropic conductive resin).

  In addition, when the electrical connection is not required for fixing the semiconductor chip 12 and the conductive path 11A, an insulating adhesive mixed with a filler that helps heat conduction is selected.

  In this semiconductor device, since the conductive path 11 is supported by the insulating resin 10 that is a sealing resin, a support substrate is not necessary, and the conductive path 11, the semiconductor chip 12, and the insulating resin 10 are included. This configuration is a feature of the present invention. As described in the section of the prior art, the conductive path of a conventional semiconductor device is supported by a support substrate (flexible sheet, printed circuit board or ceramic substrate) or supported by a lead frame. The structure which may be sufficient is added. However, since this circuit device is composed of the minimum necessary components and does not require a support substrate, it is characterized by being thin and inexpensive.

  In addition, since the bonding electrode 18 of the semiconductor chip 12 is connected to one end of the fine metal wire 16, the second conductive path 11 </ b> B connected to the other end of the fine metal wire 16 is arranged around the semiconductor chip 12. The semiconductor chip is provided with bonding pads so as to be compatible with a plurality of circuits, and the bonding electrode 18 is configured by using the semiconductor device 13, input / output electrodes necessary for the circuit A configured using the semiconductor device 13. Are classified into input / output electrodes necessary for the circuit B, test electrodes for semiconductor chip evaluation, and the like.

  In the present invention, since it is packaged as the semiconductor device 13 constituting the circuit A, necessary input / output electrodes and test electrodes are connected to the second conductive path 11B through the fine metal wires 16. Since the second conductive path 11B connected to the test electrode is measured by contact with a flow bar or the like, the size may be small. However, it is necessary to increase the size of the second conductive path 11B electrically connected to the input / output electrodes because of problems such as current capacity. Therefore, the second conductive path 11B electrically connected to this input / output electrode extends to the back surface of the semiconductor chip 12 via the wiring 11D, and the periphery of the semiconductor chip 12 and the first conductive path 11A are connected to each other. The third conductive path 11C is electrically connected to the space between them.

  Since the first conductive path 11A is made of Cu or the like having excellent thermal conductivity, the size thereof may be smaller than that of the semiconductor chip 12. Accordingly, an empty space is generated between the first conductive path 11A and the second conductive path 11B. Accordingly, the third conductive path 11C having a size larger than that of the second conductive path 11B can be disposed in this empty space.

  Further, the third conductive path 11C is arranged in the second conductive path 11B arranged in a ring shape. When the semiconductor device 13 is fixed to the mounting board, the following merits occur. In other words, due to the difference in thermal expansion coefficient between the mounting substrate and the semiconductor device 13, even if stress is applied to the connection portion, the electrode formed on the mounting substrate side and the second conductive path 11B are fixed by the brazing material. The stress is hard to act on the fixed portion between the electrode formed on the substrate side and the third conductive path 11C.

  Further, the surface of the separation groove 14 and the surface of the conductive path 11 can be substantially matched or the conductive path 11 can be protruded. If there is no step between the back electrodes 11A to 11D and the insulating resin, the semiconductor device 13 can be moved horizontally as it is. In other words, when the fixation by the brazing material is realized on the mounting substrate, the semiconductor device 13 self-aligns itself on the mounting substrate by the surface tension of the molten brazing material. Further, when the back electrodes 11A to 11D are protruded from the insulating resin, the wiring does not short-circuit with the conductive path on the mounting substrate even if the brazing material and the flux are scattered.

  In FIG. 10, there are cases where sealing molding is performed by a mold mold using a thermosetting resin or a thermoplastic resin as the insulating resin 58. This process involves a heat treatment for curing the insulating resin 58, and the linear expansion coefficient at the time of molding reaches 30 ppm / ° C. Therefore, due to the difference from the silicon linear expansion coefficient (3 ppm / ° C.) of the IC chip 52, the contraction force acts on the insulating resin 58 due to the temperature difference from the processing temperature to cooling to room temperature.

  Due to such shrinkage force, when the insulating resin 58 is molded and then cooled to room temperature, the end of the semiconductor device is lifted, causing a problem in that the outer dimensions are changed (warped).

  The present invention does not employ a support substrate that supports the conductive paths 11A to 11D, and further separates the conductive paths 11A to 11D and disposes the insulating resin 10 between the conductive paths 11A to 11D. The coefficient of thermal expansion located on the back surface of the semiconductor device 13 can be brought close to the coefficient of thermal expansion of the insulating resin, and the warpage can be suppressed.

Second Embodiment Explaining Method of Manufacturing Circuit Device Next, a method of manufacturing the semiconductor device 13 will be described with reference to FIGS.

  First, as shown in FIG. 2, a sheet-like conductive foil 60 is prepared. The conductive foil 60 is selected in consideration of the adhesiveness, bonding property, and plating property of the brazing material. As the material, a conductive foil mainly composed of Cu, a conductive foil mainly composed of Al, or Fe is used. A conductive foil made of an alloy such as Ni is employed.

  The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of the later etching, and here, a copper foil of 70 μm (2 ounces) is employed. However, it is basically good if it is 300 μm or more and 10 μm or less. As will be described later, it is only necessary that the separation groove 61 shallower than the thickness of the conductive foil 60 can be formed.

  In addition, the sheet-like conductive foil 60 is prepared by being wound in a roll shape with a predetermined width, and this may be conveyed to each step described later, or a conductive foil cut into a predetermined size is prepared, You may convey to each process mentioned later.

  Subsequently, there is a step of removing the conductive foil 60 excluding the region that becomes at least the conductive paths 11 </ b> A to 11 </ b> D thinner than the thickness of the conductive foil 60. Then, there is a step of mounting the semiconductor chip 12 on the conductive paths 11 </ b> A to 11 </ b> D formed by this removing step, and covering the insulating groove 10 and the conductive foil 60 with the insulating resin 10.

  First, as shown in FIG. 3, a photoresist PR (etching resistant mask) is formed on a conductive foil 60 made of Cu, and the photoresist PR is exposed so that the conductive foil 60 excluding the regions to be the conductive paths 11A to 11D is exposed. Pattern. Etching is performed through the photoresist PR.

  In FIG. 3, the separation groove 61 is formed straight, but in this manufacturing method, it is etched non-anisotropically by wet etching or dry etching, and its side surface becomes a rough surface, and as shown in FIG. Thus, it has a characteristic of being curved. However, if anisotropic etching or laser metal evaporation is employed, the side wall of the separation groove 61 is formed straight as shown in FIG. The depth of the separation groove 61 formed by etching is about 50 μm.

  In the case of wet etching, ferric chloride or cupric chloride is used as the etchant, and the conductive foil is dipped in the etchant or showered.

  In particular, as shown in FIG. 4, the etching directly in the lateral direction is difficult to proceed immediately below the photoresist PR serving as an etching mask, and a deeper portion is etched in the lateral direction. As shown in the figure, the opening diameter of the opening corresponding to the position decreases from the position where the side surface of the separation groove 61 is located upward, so that a reverse taper structure is formed and an anchor structure is obtained. Further, by adopting a shower ring, etching proceeds in the depth direction and lateral etching is suppressed, so that this anchor structure appears remarkably.

  In the case of dry etching, etching can be performed anisotropically or non-anisotropically. At present, it is said that Cu cannot be removed by reactive ion etching, but it can be removed by sputtering. Etching can be anisotropic or non-anisotropic depending on sputtering conditions.

  In FIGS. 3 and 4, instead of the photoresist PR, a conductive film resistant to the etching solution may be selectively coated. If the conductive film is selectively deposited on the conductive path, this conductive film becomes an etching protective film, and the separation groove can be etched without employing a resist. Possible materials for the conductive film are Ag, Au, Pt, Pd, and the like. In addition, these corrosion-resistant conductive films have the feature that they can be used as they are as die pads and bonding pads.

  For example, the Ag coating adheres to Au and also to the brazing material. Therefore, if the Au coating is coated on the back surface of the chip, the chip can be thermocompression bonded to the Ag coating on the conductive path 51 as it is, and the chip can be fixed via a brazing material such as solder. Further, since an Au fine wire can be adhered to the Ag conductive film, wire bonding is also possible. Accordingly, there is an advantage that these conductive films can be used as they are as die pads and bonding pads.

  Subsequently, as shown in FIG. 5, there is a process of electrically connecting the semiconductor chip 12 to the conductive foil 60 in which the separation groove 61 is formed and mounting it.

  The semiconductor chip 12 is a semiconductor element such as a transistor, a diode, or an IC chip.

  Here, the bare IC chip 12 is die-bonded to the first conductive path 11A formed by half etching, and the bonding electrode of the IC chip and the second conductive path 11B are ball bonded by thermocompression bonding or wedge bonding by ultrasonic waves. It connects via the connection means (for example, metal fine wire) 16 fixed by the above.

  An insulating material 19 is formed in order to prevent a short circuit between the back surface of the semiconductor chip 12 and the wiring 11D and between the back surface of the semiconductor chip 12 and the third conductive path 11C. Here, as the insulating material 19, an insulating resin is formed on the semiconductor chip 12 or the conductive foil 60, and a portion corresponding to the first conductive path 11A is removed.

  Further, as shown in FIG. 6, there is a step of attaching the insulating resin 10 to the conductive foil 60 and the separation groove 61. This can be realized by transfer molding, injection molding, or dipping. As the resin material, a thermosetting resin such as an epoxy resin can be realized by transfer molding, and a thermoplastic resin such as polyimide resin or polyphenylene sulfide can be realized by injection molding.

  In the present embodiment, the thickness of the insulating resin 10 coated on the surface of the conductive foil 60 is adjusted so that about 100 μm is coated from the top of the connecting means 16. This thickness can be increased or decreased in consideration of the strength of the circuit device.

  The feature of this step is that the conductive foil 60 that becomes the conductive path 11 becomes the support substrate until the insulating resin 10 is coated. Conventionally, as shown in FIG. 10, the conductive path 51 is formed by using a support substrate 50 that is not originally required. However, in the present invention, the conductive foil 60 that is a support substrate is a material necessary as an electrode material. is there. Therefore, there is a merit that the work can be performed with the constituent materials omitted as much as possible, and the cost can be reduced.

  Moreover, since the separation groove 61 is formed shallower than the thickness of the conductive foil, the conductive foil 60 is not individually separated as the conductive paths 11A to 11D. Therefore, the sheet-like conductive foil 60 can be handled as a single unit, and when the insulating resin 10 is molded, it has a feature that the work of transporting to the mold and mounting to the mold becomes very easy.

  Furthermore, when the insulating resin 10 is filled in the separation groove 61 having the curved structure 15, an anchor effect is generated in this portion, and the peeling of the insulating resin 10 can be prevented. It is possible to prevent the conductive path 11 from coming off.

  Subsequently, there is a step of chemically and / or physically removing the back surface of the conductive foil 60 and separating it as the conductive path 11. Here, this removal step is performed by polishing, grinding, etching, laser metal evaporation, or the like.

  For example, the entire surface is cut by about 30 μm by a polishing apparatus or a grinding apparatus, and the insulating resin 10 is exposed from the separation groove 61. This exposed surface is indicated by a dotted line in FIG. As a result, the conductive path 51 having a thickness of about 40 μm is separated. Alternatively, wet etching may be performed on the entire surface of the conductive foil 60 until the insulating resin 50 is exposed, and then the entire surface may be shaved by a polishing or grinding apparatus to expose the insulating resin 50. Furthermore, as shown in FIG. 7, a photoresist PR may be formed on the back surface corresponding to the conductive paths 11A to 11D, and the photoresist may be used as an anti-etching mask for etching.

  As a result, the surface of the conductive path 11 is exposed to the insulating resin 10. The separation groove 61 becomes the separation groove 14 of FIG.

  When the polishing is performed up to the dotted line shown in FIG. 6, the surfaces of the insulating resin 10 and the conductive path 11 coincide. Therefore, the back surface of the semiconductor device becomes flat. When the photoresist PR is employed, the conductive paths 11A to 11D have a structure protruding from the back surface of the insulating resin 10 as shown in FIG.

  When a conductive film is applied to the back surface of the conductive path 11, a conductive film may be formed in advance on the back surface of the conductive foil in FIG. In this case, a portion corresponding to the conductive path may be selectively attached. The deposition method is, for example, plating. The conductive film is preferably made of a material that is resistant to etching. Further, when this conductive film is employed, the conductive path 51 can be separated only by etching without polishing.

  Finally, a conductive material such as solder is applied to the exposed conductive path 11 as necessary, and the circuit device is completed, and this is mounted on the mounting substrate 70 as shown in FIG.

  The mounting substrate 70 is provided with electrodes corresponding to the conductive paths 11A to 11D, and is electrically connected and fixed via a brazing material 71 such as solder.

  The arrows in FIG. 9 indicate that heat generated in the semiconductor chip 12 is transmitted to the mounting substrate 70 side via the first conductive path 11A. When the support substrate (flexible sheet) 50 is employed as in the conventional structure of FIG. 10, the support substrate has a high thermal resistance, the semiconductor chip generates heat, and the drive current cannot be increased. However, in the present invention, the back surface of the semiconductor chip 12 is fixed to the conductive pattern of the mounting substrate 70 through the brazing material 17, the first conductive path 11 </ b> A, and the brazing material 71. Can tell. Therefore, the temperature rise of the semiconductor chip 12 can be prevented, and the drive current can be increased accordingly.

  In this manufacturing method, the transistor and the chip resistor are only mounted on the conductive foil 60. However, the transistor and the chip resistor may be arranged in a matrix shape as one unit, or one of the circuit elements is set as one unit. They may be arranged in a matrix. Further, a plurality of semiconductor chips, a plurality of passive elements, and wirings that electrically connect them may be formed by the conductive paths to constitute a circuit having a desired function, and these may be arranged in a matrix. In this case, a step of individually separating the semiconductor devices with a dicing apparatus is added.

  Further, as shown in FIG. 6, when the conductive foil 60 is bonded to substantially the entire back surface of the semiconductor device 13, the semiconductor device 13 warps greatly due to the difference in coefficient of linear expansion between the conductive foil 60 and the insulating resin 10. However, after that, the conductive path 11 is separated, and the conductive path 11 is formed thinner than the thickness of the conductive foil 60. At the same time, the insulating resin 10 is embedded between the conductive paths. Therefore, this bimetal effect is suppressed and has the merit of less warping.

A feature of this manufacturing method is that the insulating path 10 can be used as a support substrate to separate the conductive path 11. The insulating resin 10 is a material necessary as a material for embedding the conductive path 11, and does not require an unnecessary support substrate 50 unlike the conventional manufacturing method shown in FIG. Therefore, it has the characteristics that it can be manufactured with a minimum amount of material and cost can be reduced.

It is a figure explaining the semiconductor device of the present invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the mounting structure of the conventional circuit device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Insulating resin 11A-11D Conductive path 12 Semiconductor chip 13 Semiconductor device 14 Separation groove 15 Curved structure 70 Mounting board

Claims (14)

A conductive path; a circuit element electrically connected to the conductive path; and an insulating resin that seals the conductive path and the circuit element with at least a back surface of the conductive path exposed to the outside. ,
The back surface of the said conductive path protrudes outside rather than the said insulating resin, The semiconductor device characterized by the above-mentioned.   The semiconductor device according to claim 1, wherein a part of the side surface and the back surface of the conductive path are exposed to the outside from the insulating resin.   2. The semiconductor device according to claim 1, wherein a side surface of the conductive path has a curved structure.   The plating film having a resistance against an etchant of the conductive path is provided on a back surface of the conductive path, and the pattern of the plating film and the back surface of the conductive path have substantially the same shape. The semiconductor device according to claim 2 or claim 3. A semiconductor element, a bonding pad electrically connected to the semiconductor element through a fine metal wire, and an insulating property for sealing the bonding pad and the circuit element with at least a back surface of the bonding pad exposed to the outside Resin,
The back surface of the said bonding pad protrudes outside rather than the said insulating resin, The semiconductor device characterized by the above-mentioned.   6. The semiconductor device according to claim 5, wherein a part of the side surface and the back surface of the bonding pad are exposed to the outside from the insulating resin.   6. The semiconductor device according to claim 5, wherein a side surface of the bonding pad has a curved structure.   6. The plating film according to claim 5, wherein a plating film resistant to an etchant of the bonding pad is provided on the back surface of the bonding pad, and the pattern of the plating film and the back surface of the bonding pad have substantially the same shape. The semiconductor device according to claim 6 or 7. A step of preparing a conductive foil having a conductive path formed into a convex shape by forming a separation groove on the surface;
Electrically connecting a circuit element to the conductive path;
Forming an insulating resin so that the circuit element is covered and filled in the separation groove;
Selectively removing the back surface of the conductive foil corresponding to the separation groove, thereby separating the conductive paths from each other in a state where the back surface of the conductive path protrudes outside the insulating resin. A method of manufacturing a semiconductor device. In the step of separating the conductive paths,
The method for manufacturing a semiconductor device according to claim 9, wherein the conductive foil is etched from the back surface after the back surface of the conductive foil in a region corresponding to the conductive path is covered.   10. The method of manufacturing a semiconductor device according to claim 9, wherein the side wall of the separation groove is curved.   The method of manufacturing a semiconductor device according to claim 9, wherein the circuit element is a semiconductor element, and the semiconductor element is connected to the conductive path through a thin metal wire. By forming a separation groove on the surface, a convex conductive path is provided, and a conductive foil in which circuit elements are electrically connected to the conductive path is prepared,
After providing an insulating resin so as to cover the circuit element, the back surface of the conductive foil is selectively removed through a plating film provided corresponding to the conductive path, thereby A method for manufacturing a semiconductor device, characterized in that the conductive path is separated in a state in which a back surface protrudes outside the insulating resin.   The conductive path includes a first conductive path provided with the circuit element and a second conductive path provided around the circuit element and electrically connected to the circuit element. 14. The method of manufacturing a semiconductor device according to claim 13, wherein the formed first conductive path and the second conductive path are connected to an electrode of a mounting substrate.

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