JP2006054209A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2006054209A JP2006054209A JP2003342705A JP2003342705A JP2006054209A JP 2006054209 A JP2006054209 A JP 2006054209A JP 2003342705 A JP2003342705 A JP 2003342705A JP 2003342705 A JP2003342705 A JP 2003342705A JP 2006054209 A JP2006054209 A JP 2006054209A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
【解決手段】 基板部11の配線層11c,11d上にはLED素子12が搭載され、このLED素子12を覆うようにしてシリコン等による緩衝層13が設けられている。この緩衝層13及びその周辺を覆うようにして透光性の低融点ガラスによる封止部材14が加圧プレスにより形成されている。緩衝層13により、封止部材14の封止時の熱が緩衝層13によって遮られ、LED素子12による熱的影響がLED素子12に及ばないようにすることができる。
【選択図】 図1
Description
(1)ガラス材による封止部材14で全体を封止したことにより、樹脂封止で問題になった黄変や着色による光の減衰を低減することができる。
(2)LED素子12の周囲に緩衝層13を設けたことにより、封止部材14の封止時に粘度の高いガラス材を介してLED素子12に付与される外力が緩和される。すなわち、緩衝層13の介在によってLED素子12と封止部材14とが直接接触しないので、熱膨張・熱収縮によって生じる応力を緩衝層13によって吸収できる。
(3)緩衝層13を介してLED素子12をガラス封止することによって、LED素子12近傍に生じていたクラックの発生を防止することが可能になる。このような緩衝層13を設ける構成は、封止部材14との接触面積が広くなるラージサイズ(1mm×1mm)のLED素子12において特に有効である。
(4)LED素子12を緩衝層13で包囲することによって、バンプ2の圧潰による電極間の短絡を防ぐことができる。また、緩衝層13がバンプ形状の崩れを抑制することから、ガラス封止によってLED素子12の光軸が傾くことを防げる。
(5)ウェハをスクライブすることによりLED素子12を形成する場合、スクライブされたLED素子12の側面には微細な凹凸が生じている。この凹凸はガラス封止型の発光装置10にとってLED素子12と封止部材14との界面に応力の不均衡部分を形成し、ひいてはマイクロクラックを発生させる要因となる。このような問題に対しては、LED素子12のスクライブ面となる側面に緩衝層21を設けることで、封止部材14の熱収縮時におけるマイクロクラックの発生を防げる。
(1)サブマウント52の下部に放熱を促す放熱部材51を設けたため、LED素子41の点灯に伴う発熱を効率良く外部へ放散でき、ガラス材による封止部材55等の温度上昇に伴う熱膨張・熱収縮の発生を抑制してクラックの発生を防止することができる。
(2)緩衝層54に蛍光体を混合させたことにより、波長変換が行えると共に光の取り出し効率の向上が可能になる。
11 基板部
11a セラミック基板
11b,11c,11d,11e,11f,11g 配線層
11h,11i,11j,11k Auメッキ膜
11l,11m スルーホール
12 LED素子
12a,12b 電極
13 緩衝層
14 封止部材
20 発光装置
21 緩衝層
30 発光装置
31 基板部
31a,31b,31c,31d,31e セラミック基板
31f,31g スルーホール
32 LED素子
33 緩衝層
34 封止部材
35a,35b ワイヤ(ボンディングワイヤ)
40 発光装置
41 LED素子
42 バンプ
43 サブマウント
43a,43b 電極
43c スルーホール
44a,44b リード部
45 緩衝層
46 封止部材
50 発光装置
51 放熱部材
52 サブマウント
52a,52b 配線パターン
53a,53b リード部
54 緩衝層
55 封止部材
200、発光装置
201,202、配線導体
203、カップ部
203A、底部
204、LED素子
205、ワイヤ
206、ガラス層
206A、蛍光物質
207、封止樹脂
Claims (7)
- 発光素子と、
基板又はリードフレームのリード部に前記発光素子が直接的又は間接的に搭載され、前記基板の配線層又は前記リード部を介して前記発光素子に給電を行う給電部材と、
前記発光素子及び前記発光素子の周囲を封止するように設けられる透光性のガラスによる封止部材と、
前記発光素子と前記封止部材との間に設けられ、前記封止部材の封止時及び封止時と封止加工後の温度変化によって生じる熱的影響が前記発光素子に及ばないようにする緩衝層とを備えることを特徴とする発光装置。 - 前記発光素子は、スクライブ法によってダイシングされたものであり、スクライブ面が前記緩衝層によって覆われていることを特徴とする請求項1記載の発光装置。
- 前記緩衝層は、シリコン系材料であることを特徴とする請求項1又は2記載の発光装置。
- 前記緩衝層は、多孔質セラミックスであることを特徴とする請求項1又は2記載の発光装置。
- 前記緩衝層は、前記発光素子の上面及び側面を覆うように設けられていることを特徴とする請求項1から4のいずれかに記載の発光装置。
- 前記緩衝層は、蛍光体が混入されていることを特徴とする請求項1から5のいずれかに記載の発光装置。
- 前記緩衝層は、前記LED素子がワイヤを用いて前記給電部材側との接続を行うタイプであるとき、前記ワイヤをも覆うように設けられることを特徴とする請求項1から6のいずれかに記載の発光装置。
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003342705A JP4303550B2 (ja) | 2003-09-30 | 2003-09-30 | 発光装置 |
EP04719060.8A EP1603170B1 (en) | 2003-03-10 | 2004-03-10 | Method for manufacturing a solid-state optical element device |
PCT/JP2004/003089 WO2004082036A1 (ja) | 2003-03-10 | 2004-03-10 | 固体素子デバイスおよびその製造方法 |
EP13156568.1A EP2596948B1 (en) | 2003-03-10 | 2004-03-10 | Method of making a semiconductor device |
TW093106393A TWI246780B (en) | 2003-03-10 | 2004-03-10 | Solid-state component device and manufacturing method thereof |
KR1020057016878A KR100693969B1 (ko) | 2003-03-10 | 2004-03-10 | 고체 소자 디바이스 및 그 제조 방법 |
US10/548,560 US7824937B2 (en) | 2003-03-10 | 2004-03-10 | Solid element device and method for manufacturing the same |
CN2004800064031A CN1759492B (zh) | 2003-03-10 | 2004-03-10 | 固体元件装置的制造方法 |
CN2010101176741A CN101789482B (zh) | 2003-03-10 | 2004-03-10 | 固体元件装置及其制造方法 |
US12/923,788 US8154047B2 (en) | 2003-03-10 | 2010-10-07 | Solid element device and method for manufacturing the same |
US13/419,093 US8685766B2 (en) | 2003-03-10 | 2012-03-13 | Solid element device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003342705A JP4303550B2 (ja) | 2003-09-30 | 2003-09-30 | 発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009064718A Division JP5126127B2 (ja) | 2009-03-17 | 2009-03-17 | 発光装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006054209A true JP2006054209A (ja) | 2006-02-23 |
JP4303550B2 JP4303550B2 (ja) | 2009-07-29 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003342705A Expired - Fee Related JP4303550B2 (ja) | 2003-03-10 | 2003-09-30 | 発光装置 |
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JP (1) | JP4303550B2 (ja) |
Cited By (41)
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JP2005317950A (ja) * | 2004-03-31 | 2005-11-10 | C I Kasei Co Ltd | 発光ダイオード組立体の組立方法および発光ダイオード組立体 |
JP2005317951A (ja) * | 2004-03-31 | 2005-11-10 | C I Kasei Co Ltd | 発光ダイオード組立体の組立方法および発光ダイオード組立体 |
WO2007135754A1 (ja) | 2006-05-18 | 2007-11-29 | Asahi Glass Company, Limited | 発光装置の製造方法および発光装置 |
WO2007126836A3 (en) * | 2006-04-04 | 2008-01-03 | Cree Inc | Uniform emission led package |
JP2008047851A (ja) * | 2006-07-18 | 2008-02-28 | Nichia Chem Ind Ltd | 線状発光装置およびそれを用いた面状発光装置 |
WO2008026699A1 (en) * | 2006-08-30 | 2008-03-06 | Kyocera Corporation | Light-emitting device |
WO2009020298A3 (en) * | 2007-08-09 | 2009-04-09 | Lg Innotek Co Ltd | Lighting device |
EP2065948A2 (en) * | 2007-11-28 | 2009-06-03 | Stanley Electric Co., Ltd. | Semiconductor light emitting device and lighting device |
US7569407B2 (en) | 2004-09-21 | 2009-08-04 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
JP2010268013A (ja) * | 2010-09-01 | 2010-11-25 | Nichia Corp | 発光装置 |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
US7943952B2 (en) | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
JP2011258667A (ja) * | 2010-06-07 | 2011-12-22 | Toshiba Corp | 半導体発光装置及びその製造方法 |
US8167674B2 (en) | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
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US8232564B2 (en) | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
US8337071B2 (en) | 2005-12-21 | 2012-12-25 | Cree, Inc. | Lighting device |
JP2013157357A (ja) * | 2012-01-26 | 2013-08-15 | Nichia Chem Ind Ltd | 発光装置 |
US8558252B2 (en) | 2011-08-26 | 2013-10-15 | Cree, Inc. | White LEDs with emission wavelength correction |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
JP2014140072A (ja) * | 2014-04-16 | 2014-07-31 | Rohm Co Ltd | 発光素子モジュール |
US8877524B2 (en) | 2008-03-31 | 2014-11-04 | Cree, Inc. | Emission tuning methods and devices fabricated utilizing methods |
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2003
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US9105817B2 (en) | 2003-09-18 | 2015-08-11 | Cree, Inc. | Molded chip fabrication method and apparatus |
US9093616B2 (en) | 2003-09-18 | 2015-07-28 | Cree, Inc. | Molded chip fabrication method and apparatus |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
JP2005317950A (ja) * | 2004-03-31 | 2005-11-10 | C I Kasei Co Ltd | 発光ダイオード組立体の組立方法および発光ダイオード組立体 |
JP2005317951A (ja) * | 2004-03-31 | 2005-11-10 | C I Kasei Co Ltd | 発光ダイオード組立体の組立方法および発光ダイオード組立体 |
JP4632426B2 (ja) * | 2004-03-31 | 2011-02-16 | シーアイ化成株式会社 | 発光ダイオード組立体の組立方法および発光ダイオード組立体 |
JP4632427B2 (ja) * | 2004-03-31 | 2011-02-16 | シーアイ化成株式会社 | 発光ダイオード組立体の組立方法および発光ダイオード組立体 |
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