JP2006041265A5 - - Google Patents
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- Publication number
- JP2006041265A5 JP2006041265A5 JP2004220500A JP2004220500A JP2006041265A5 JP 2006041265 A5 JP2006041265 A5 JP 2006041265A5 JP 2004220500 A JP2004220500 A JP 2004220500A JP 2004220500 A JP2004220500 A JP 2004220500A JP 2006041265 A5 JP2006041265 A5 JP 2006041265A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- layer gate
- disposed
- layer
- concentration impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004220500A JP4628032B2 (ja) | 2004-07-28 | 2004-07-28 | 半導体装置及びその作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004220500A JP4628032B2 (ja) | 2004-07-28 | 2004-07-28 | 半導体装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006041265A JP2006041265A (ja) | 2006-02-09 |
| JP2006041265A5 true JP2006041265A5 (cg-RX-API-DMAC7.html) | 2007-08-23 |
| JP4628032B2 JP4628032B2 (ja) | 2011-02-09 |
Family
ID=35905926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004220500A Expired - Fee Related JP4628032B2 (ja) | 2004-07-28 | 2004-07-28 | 半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4628032B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8629490B2 (en) | 2006-03-31 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode |
| US7932183B2 (en) | 2006-11-14 | 2011-04-26 | Mitsubishi Electric Corporation | Method of manufacturing multilayer thin film pattern and display device |
| JP5500771B2 (ja) | 2006-12-05 | 2014-05-21 | 株式会社半導体エネルギー研究所 | 半導体装置及びマイクロプロセッサ |
| US7994000B2 (en) | 2007-02-27 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP5179219B2 (ja) * | 2008-02-20 | 2013-04-10 | 東京エレクトロン株式会社 | 付着物除去方法及び基板処理方法 |
| KR101813492B1 (ko) * | 2011-01-05 | 2018-01-02 | 삼성디스플레이 주식회사 | 유기발광 표시장치 및 그 제조방법 |
| CN104067375B (zh) * | 2012-02-01 | 2016-05-11 | 东京毅力科创株式会社 | 等离子体蚀刻方法和等离子体蚀刻装置 |
| CN106024633A (zh) * | 2016-06-23 | 2016-10-12 | 京东方科技集团股份有限公司 | 薄膜晶体管及阵列基板的制备方法、阵列基板及显示装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3648808B2 (ja) * | 1995-10-18 | 2005-05-18 | セイコーエプソン株式会社 | 薄膜半導体装置およびその製造方法 |
| JP2001308337A (ja) * | 2000-04-24 | 2001-11-02 | Matsushita Electric Ind Co Ltd | 低温ポリシリコンｔｆｔの製造方法 |
| US6780694B2 (en) * | 2003-01-08 | 2004-08-24 | International Business Machines Corporation | MOS transistor |
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2004
- 2004-07-28 JP JP2004220500A patent/JP4628032B2/ja not_active Expired - Fee Related