JP2006041108A - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP2006041108A JP2006041108A JP2004217356A JP2004217356A JP2006041108A JP 2006041108 A JP2006041108 A JP 2006041108A JP 2004217356 A JP2004217356 A JP 2004217356A JP 2004217356 A JP2004217356 A JP 2004217356A JP 2006041108 A JP2006041108 A JP 2006041108A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 84
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 22
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000012535 impurity Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 25
- 229910052732 germanium Inorganic materials 0.000 claims description 20
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 20
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910000078 germane Inorganic materials 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- GGJOARIBACGTDV-UHFFFAOYSA-N germanium difluoride Chemical compound F[Ge]F GGJOARIBACGTDV-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 99
- 238000006243 chemical reaction Methods 0.000 abstract description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 10
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 230000001939 inductive effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 100
- 239000007789 gas Substances 0.000 description 73
- 238000010438 heat treatment Methods 0.000 description 40
- 239000010408 film Substances 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 11
- 238000010248 power generation Methods 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 11
- 239000004332 silver Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 3
- 229910052986 germanium hydride Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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Abstract
【解決手段】本発明の太陽電池の製造方法は、p型多結晶Siウエハ1表面にSi層またはSiGe層を形成し(工程5)、Si層またはSiGe層が形成されたp型多結晶Siウエハ1に対し、p型多結晶Siウエハ1とは異なる導電型のn型層53を形成するためのP(リン)をSi層またはSiGe層側から導入してp型多結晶Siウエハ1にpn接合を形成する(工程6)ことで、入射光の波長変化に対する感度変化を示す分光感度を向上させ、光電変換効率を向上させた太陽電池を製造することができる。
【選択図】図1
Description
3 セラミックヒータ
5 加熱炉
7 設置部
9 真空ポンプ
11 第1供給路
11a 第1開閉弁
13 第2供給路
13a 第2開閉弁
25 第3供給路
25a 第3開閉弁
27 第4供給路
27a 第4開閉弁
31 収容部
33 第5供給路
33a 第5開閉弁
35 第6供給路
53 n型層
55 ITO膜
57 アルミペースト
57a 浸入層
59 銀ペースト
61 電極部
63 太陽電池
71 電流計
73 電圧計
Claims (4)
- 半導体基板表面にシリコン層またはシリコンゲルマニウム層を形成し、
上記シリコン層またはシリコンゲルマニウム層が形成された半導体基板に対し、上記半導体基板とは異なる導電型の半導体を形成するための不純物を上記シリコン層またはシリコンゲルマニウム層側から導入して上記半導体基板にpn接合を形成することを特徴とする太陽電池の製造方法。 - 上記シリコン層またはシリコンゲルマニウム層を、化学気相成長またはエピタキシャル成長を用いて堆積成長させ形成する請求項1記載の太陽電池の製造方法。
- 上記化学気相成長または上記エピタキシャル成長を、シリコンの供給源となるガス単独、またはシリコンの供給源となるガスおよびゲルマニウムの供給源となるガスを供給して行なう請求項2記載の太陽電池の製造方法。
- 上記シリコンの供給源となるガスとしてモノシランまたはジシランのうち少なくともいずれかを用い、ゲルマニウムの供給源となるガスとしてゲルマンまたはフッ化ゲルマニウムのうち少なくともいずれかを用いる請求項3記載の太陽電池の製造方法。
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JP2004217356A JP5031980B2 (ja) | 2004-07-26 | 2004-07-26 | 太陽電池の製造方法 |
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JP5031980B2 JP5031980B2 (ja) | 2012-09-26 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108336165A (zh) * | 2018-03-20 | 2018-07-27 | 杨益文 | 分体式太阳能电池及太阳能阵列电池 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03120762A (ja) * | 1989-10-03 | 1991-05-22 | Sharp Corp | 太陽電池セル |
JPH04249374A (ja) * | 1991-02-05 | 1992-09-04 | Sharp Corp | 光電変換素子 |
JPH0529638A (ja) * | 1991-07-22 | 1993-02-05 | Sharp Corp | 光電変換装置の製造方法 |
-
2004
- 2004-07-26 JP JP2004217356A patent/JP5031980B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03120762A (ja) * | 1989-10-03 | 1991-05-22 | Sharp Corp | 太陽電池セル |
JPH04249374A (ja) * | 1991-02-05 | 1992-09-04 | Sharp Corp | 光電変換素子 |
JPH0529638A (ja) * | 1991-07-22 | 1993-02-05 | Sharp Corp | 光電変換装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108336165A (zh) * | 2018-03-20 | 2018-07-27 | 杨益文 | 分体式太阳能电池及太阳能阵列电池 |
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