JP2006032621A - Thermoelectric heat dissipating apparatus and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thermoelectric heat dissipating apparatus which has high heat dissipation efficiency and is advantageous in terms of cost, and to provide a method of manufacturing the same. <P>SOLUTION: The method of manufacturing the thermoelectric heat dissipating apparatus includes a step of providing a substrate 1, a thermoelectric semiconductor element 2 connected to the substrate, and a heatsink 3 formed in the shape of a plate and a fine coated with an electric insulating film 33 and having one surface 31 formed by patterning a conductive wire 42; and a step of adhering the heatsink to the thermoelectric semiconductor element. Accordingly, the thermoelectric heat dissipating apparatus is provided including the thermoelectric semiconductor element, such as a low temperature chip and the heatsink. The heat dissipating surface 24 of the low-temperature chip is electrically connected directly to the heatsink formed in the shape of a plate or a fin. The other surface of the low-temperature chip is adhered to the substrate. The substrate is utilized to connect with the surface of an electrical component for heat transmission. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a thermoelectric heat dissipation device and a method for manufacturing the thermoelectric heat dissipation device. More particularly, the present invention relates to a thermoelectric including a combination of a thermoelectric semiconductor element such as a so-called cryogenic chip that performs thermoelectric cooling based on the Peltier effect and a heat sink in the shape of a fin or a plate. The present invention relates to a heat dissipation device and a method for manufacturing the thermoelectric heat dissipation device.

  The development of technology related to electronic components is very rapid, and in particular, the development of a central processing unit (CPU), which is a main component of a computer, is very fast. CPUs tend to be reduced in size, and their performance and efficiency are evolving. Due to the downsizing of the CPU, when the CPU operates, the heat generated with the power consumption is rapidly accumulated so as to increase the temperature of the CPU. If heat is not properly removed from the CPU, the CPU can be overheated and destroyed to a level that reduces the life and reliability of the computer. Thus, heat dissipation of the CPU is a problem that has significant significance while the computer is operating.

  One of the heat dissipation devices on the market uses a fan that is assembled to the housing of the electronic device. This heat dissipating device is designed to exhaust hot air from inside the housing in order to supply outside air into the housing of the device. This dissipates heat generated with the operation of the electronic component within the housing of the electronic device. However, when the room temperature is as high as about 35 ° C. as in summer, the atmospheric temperature cannot be lower than the internal temperature in the housing of the electronic device, so the efficiency of heat dissipation of this type of one-way fan is Not enough. Therefore, the use of a one-way fan that creates air convection with hot outside air is inefficient because the electronic components are still operated in a hot atmosphere. Adding a one-way fan to the device cannot improve efficiency.

  Another commercial heat dissipator for removing heat generated from electronic components is a device that combines a substrate and a heat sink. The heat sink is connected to the surface of the electronic component through a substrate for heat transfer. Heat is conducted through a heat sink and then transferred or dissipated into the atmosphere. To increase the efficiency of heat transfer of the heat sink, a fan can be added to the heat sink.

  There are other commercial electrical heat dissipation devices. As shown in FIG. 1, this type of commercial electrical heat dissipation device includes a so-called cryogenic chip for heat exchange by thermoelectric cooling based on the Peltier effect. The heat conducting surface is integrated with the heat dissipation device described above. The heat generated from the electronic component is exchanged by the low temperature chip to the surface of the heat conducting surface and then transferred to the integrated heat dissipation device. In this way, heat is dissipated by heat dissipating devices or additional fans. However, a low-temperature chip in an electrical heat dissipation device has a top ceramic plate, a bottom ceramic plate, and a P-type-N type semiconductor disposed between and electrically connected to the ceramic plates. The thermal conductivity of ceramic materials is lower than that of metals and high thermal conductivity materials. Further, since heat is indirectly transferred from the ceramic plate to the heat dissipation device, the efficiency of heat conduction of the electrical heat dissipation device is not sufficient.

  An object of the present invention is to provide a thermoelectric heat dissipation device having high heat dissipation efficiency and advantageous in cost, and a manufacturing method thereof.

  The present invention provides a method for manufacturing a thermoelectric heat dissipation device. The method includes providing a heat sink in the form of a plate or fin having a substrate, a thermoelectric semiconductor element connected to the substrate, and a surface coated with an electrically insulating coating to form a conductive wire; Attaching a heat sink to the active semiconductor element. This thermoelectric heat dissipation device dissipates heat by direct heat transfer.

  The present invention further provides a thermoelectric heat dissipation device. The apparatus includes a thermoelectric semiconductor element such as a low temperature chip and a heat sink. The cooling surface of the low-temperature chip is directly electrically connected to a heat sink in the form of a plate or fin, and the other surface of the low-temperature chip is attached to the substrate. This substrate is used to connect electronic components to the surface for heat exchange.

  The heat sink of the thermoelectric heat dissipation device is directly connected to the heat dissipation surface of the thermoelectric semiconductor element to transfer the heat exchanged from the electronic components, thereby increasing the efficiency of heat dissipation of the device, Its cost is low compared to conventional electrical heat dissipation devices.

  These and other objects of the present invention will become apparent to those of ordinary skill in the art by reference to the following detailed description of the preferred embodiments.

  It is understood that both the foregoing general description and the following detailed description are exemplary and are intended to provide further explanation of the invention as set forth in the claims. There must be.

The invention described in claim 1 for achieving the above object is to manufacture a thermoelectric heat dissipation device including a combination of a thermoelectric semiconductor element that performs thermoelectric cooling based on the Peltier effect and a heat sink. A method,
Providing a substrate having a single surface formed by patterning a number of first conductive lines;
Providing a heat sink having a single surface formed by patterning a number of second conductive lines;
A thermoelectric semiconductor element sandwiched between the substrate and the heat sink is electrically connected to each of the first and second conductive lines with a number of P-type-N-type posts of the thermoelectric semiconductor element. A thermoelectric heat dissipating device manufacturing method comprising the steps of adhering so

The invention according to claim 7 for achieving the above object is a thermoelectric heat dissipation device including a combination of a thermoelectric semiconductor element for performing thermoelectric cooling based on the Peltier effect and a heat sink. ,
A thermoelectric semiconductor element;
A substrate having a surface formed by patterning a plurality of first conductive lines to be attached to one end of the thermoelectric semiconductor element;
And a heat sink having a surface on which a plurality of second conductive lines are patterned so as to be stacked on the other end of the thermoelectric semiconductor element. .

  The heat sink of the thermoelectric heat dissipation device is directly connected to the heat dissipation surface of the thermoelectric semiconductor element to transfer the heat exchanged from the electronic components, so that the efficiency of heat dissipation of the device can be increased, Furthermore, it is possible to provide a thermoelectric heat dissipation device that is advantageous in terms of cost as compared with a conventional electrical heat dissipation device.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 2 is a cross-sectional view showing a substrate according to an embodiment of the present invention, FIG. 3 is a cross-sectional view showing a state in which the substrate according to the embodiment of the present invention and a thermoelectric semiconductor element are combined, and FIG. FIG. 5 is a cross-sectional view showing an assembly of a substrate, a heat sink, and a thermoelectric semiconductor element according to an embodiment of the present invention. In the drawings and description, the same reference numerals are used for common members.

  2-5 illustrate a preferred embodiment of the present invention for manufacturing a thermoelectric heat dissipation device. The method of the present invention includes providing a substrate 1. As shown in FIG. 2, a large number of conductive lines 41 for connecting the thermoelectric semiconductor elements 2 are formed on the upper surface 11 of the substrate 1 in a patterned manner, and a large number of P-type-N made of a semiconductive material is formed. The electrical connection of the mold posts 21 and 22 is provided. The upper surface 11 is used for connecting the thermoelectric semiconductor elements 2.

  As shown in FIG. 3, the thermoelectric semiconductor element 2 is connected to one surface 11 side of the substrate 1 by the cooling surface 23 side. The patterned conductive line 41 is further electrically connected to multiple sets of P-type-N-type posts 21, 22 of the semiconductor element 2.

  Furthermore, a heat conducting element 3 is provided. The heat conducting element 3 is made of a material having a high heat conductivity, but does not have conductivity. In a preferred embodiment, the heat conducting element 3 can be formed from a metal having a high thermal conductivity. The surface 31 of the heat conducting element 3 for bonding with the thermoelectric semiconductor element 2 is coated with an inert film 33 such as an anode film, and is electrically insulated. Therefore, as shown in FIG. 4, the surface 31 is thermally conductive but not conductive. In a preferred embodiment of the present invention, as shown in FIG. 5, the heat conducting element 3 includes a surface 31 on which a number of conductive lines 42 are patterned. Conductive wire 42 is used to connect to thermoelectric semiconductor element 2 and is used to provide electrical connection between P-type-N-type posts 21, 22 of semiconductive material.

  The surface 31 of the heat-conducting element 3 comprising the patterned conductive wire 42 is coupled to the top surface 24 of the thermoelectric element 2. As shown in FIG. 5, a plurality of P-type-N-type posts 21, 22 of semiconductive material are electrically connected via patterned conductive lines 42 on the surface 31.

  In accordance with the above description, a thermoelectric heat dissipation device is manufactured as shown in FIG. The thermoelectric heat dissipation device includes a thermoelectric semiconductor element 2 such as a so-called cryogenic chip that performs thermoelectric cooling based on the Peltier effect, and a heat sink 3. The thermoelectric heat dissipation device is connected to electronic components via the substrate 1. Thus, the heat generated from the electronic components is exchanged from the substrate 1 to the top of the thermoelectric semiconductor element 2 and then transferred to the heat sink 3 for heat dissipation. Thus, heat can be transferred and dissipated directly to increase the efficiency of the cold tip. Furthermore, in a preferred embodiment, the heat sink 3 can be attached directly to the top surface 24 of the thermoelectric semiconductor element 2. Compared with the case of using a conventional low-temperature chip, there is no need for a heat dissipation plate made of ceramic for bonding the heat sink 3 and the thermoelectric semiconductor element 2. Therefore, the diffusion device of the present invention is inexpensive and its manufacture is not complicated.

  A thermoelectric heat dissipation device manufactured by the above method will be described below. As a preferred embodiment, the structure of a thermoelectric heat dissipation device is shown in FIGS.

  FIG. 5 shows a thermoelectric heat dissipation device. The apparatus includes a thermoelectric semiconductor element 2, a substrate 1 for attachment to the thermoelectric semiconductor element 2, and a heat sink 3 connected to the thermoelectric semiconductor element 2. As shown in FIG. 2, the substrate 1 has a surface 11 for adhering to the thermoelectric semiconductor element 2. Although the board | substrate 1 is formed from the material which has thermal conductivity, it does not have electroconductivity. In the present embodiment shown in FIG. 2, the substrate 1 is preferably made of a ceramic material. The substrate 1 is formed into a plate shape. Accordingly, two surfaces 11 and 12 are provided. The upper surface 11 is used as an attachment surface for connecting the thermoelectric semiconductor element 2, and a plurality of conductive wires for electrically connecting the plurality of P-type-N posts 21, 22 of the thermoelectric semiconductor element 2. 41 is formed by patterning.

  The thermoelectric semiconductor element 2 includes a large number of pairs of P-type and N-type posts 21 and 22. The thermoelectric semiconductor element 2 is a so-called low-temperature chip that performs thermoelectric cooling based on the Peltier effect. For heat exchange, the P-type-N type posts 21 and 22 can absorb heat from one end and transfer this heat to the other end when electricity is supplied. In a preferred embodiment, the thermoelectric semiconductor element 2 includes a cooling end 23 for adhering to the surface 11 of the substrate 1 and a dissipating end 24.

  In a preferred embodiment, the heat sink 3 is formed from a material having a high thermal conductivity, but is electrically insulated. In another embodiment, as shown in FIG. 4, the heat sink is formed from a metal having high thermal conductivity. If the heat sink 3 is formed from metal, the surface 31 for adhering to the thermoelectric semiconductor element 2 must be coated with an inert coating 33, such as an anode coating, for electrical insulation.

  As shown in FIG. 4, the heat sink 3 described above can be formed as a structure composed of a surface 31 and fins 32. Optionally, the heat sink 3 can further include an upper plate. The surface 31 of the heat sink 3 can adhere to the thermoelectric semiconductor element 2. As shown in FIG. 5, a large number of conductive lines 42 are patterned on the surface 31 in order to be electrically connected to the P-type / N-type posts 21 and 22 of the thermoelectric semiconductor element.

  A thermoelectric heat dissipation device manufactured by the method described herein can increase the efficiency of heat dissipation when compared to prior art low temperature chip and heat sink combinations. This is because the heat sink 3 adheres directly to the heat dissipation surface 24 of the thermoelectric semiconductor element 2 and heat is exchanged from the surface 24 to the heat sink 3.

  While the preferred embodiment of the invention has been illustrated and described, it should be understood that the spirit of the invention can be embodied in various other forms and is limited only by the prior art. It is to be understood that the claims are intended to be construed to include such modifications.

It is sectional drawing which shows the low-temperature chip | tip and heat sink of the conventional structure. It is sectional drawing which shows the board | substrate concerning embodiment of this invention. It is sectional drawing which shows the state which couple | bonded the board | substrate and thermoelectric-type semiconductor element which concern on embodiment of this invention. It is sectional drawing which shows the heat sink which concerns on embodiment of this invention. 1 is a cross-sectional view illustrating an assembly of a substrate, a heat sink, and a thermoelectric semiconductor element according to an embodiment of the present invention.

Explanation of symbols

1 substrate,
11 One surface of the substrate,
2 Thermoelectric semiconductor element, low-temperature chip 21, 22 P-type-N type post,
23 Cooling edge, cooling surface,
24 heat dissipation end, heat dissipation surface,
3 Heat conduction element, heat sink,
31 One surface of the heat sink,
32 fins,
33 Inactive coating such as anode coating, electrically insulating coating 41 first conductive wire,
42 Second conductive line.

Claims (10)

A method for manufacturing a thermoelectric heat dissipation device comprising a combination of a thermoelectric semiconductor element that performs thermoelectric cooling based on the Peltier effect and a heat sink,
Providing a substrate having a single surface formed by patterning a number of first conductive lines;
Providing a heat sink having a single surface formed by patterning a number of second conductive lines;
A thermoelectric semiconductor element sandwiched between the substrate and the heat sink is electrically connected to each of the first and second conductive lines with a number of P-type-N-type posts of the thermoelectric semiconductor element. A method of manufacturing a thermoelectric heat dissipating device comprising:   The method of manufacturing a thermoelectric heat dissipation device according to claim 1, wherein the step of providing the substrate provides a substrate made of an electrically insulating ceramic material having thermal conductivity.   The method of manufacturing a thermoelectric heat dissipation device according to claim 1, wherein the attaching step further includes attaching a cooling end portion of the thermoelectric semiconductor element to the substrate.   The method for manufacturing a thermoelectric heat dissipation device according to claim 1, wherein the attaching step further includes attaching a heat dissipation end portion of the thermoelectric semiconductor element to the heat sink.   2. The method of manufacturing a thermoelectric heat dissipation device according to claim 1, wherein the step of providing the heat sink provides a heat sink made of an electrically insulating material having thermal conductivity.   The method of claim 1, wherein providing the heat sink comprises providing a heat sink made of a high thermal conductivity metal, the surface utilized for adhering to the thermoelectric semiconductor element coated with an anodic coating. Manufacturing method of thermoelectric heat dissipation device. A thermoelectric heat dissipating device including a combination of a thermoelectric semiconductor element that performs thermoelectric cooling based on the Peltier effect and a heat sink,
A thermoelectric semiconductor element;
A substrate having a surface formed by patterning a plurality of first conductive lines to be attached to one end of the thermoelectric semiconductor element;
And a heat sink having a surface on which a plurality of second conductive lines are patterned so as to be stacked on the other end of the thermoelectric semiconductor element.   The thermoelectric semiconductor element comprises a number of P-type-N-type posts that are electrically connected by the second conductive line when the heat sink is stacked on the thermoelectric semiconductor element. Item 8. The thermoelectric heat dissipation device according to Item 7.   The thermoelectric heat dissipation device according to claim 7, wherein the heat sink includes a plate and a plurality of fins.   The thermoelectric heat dissipating device according to claim 7, wherein the heat sink has a shape of a plate structure including a top plate and a bottom plate.

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