JP2006005340A5 - - Google Patents
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- JP2006005340A5 JP2006005340A5 JP2005146844A JP2005146844A JP2006005340A5 JP 2006005340 A5 JP2006005340 A5 JP 2006005340A5 JP 2005146844 A JP2005146844 A JP 2005146844A JP 2005146844 A JP2005146844 A JP 2005146844A JP 2006005340 A5 JP2006005340 A5 JP 2006005340A5
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Claims (14)
前記第１の電極上の第１の発光層と、
前記第１の発光層上の中間導電層と、
前記中間導電層上の第２の発光層と、
前記第２の発光層上の第２の電極とを有し、
前記中間導電層は電子注入を担う層と、前記電子注入を担う層と接する正孔注入を担う層とを含み、
前記電子注入を担う層と前記正孔注入を担う層の少なくとも一方は島状の層であることを特徴とする発光素子。 A first electrode;
A first light emitting layer on the first electrode;
An intermediate conductive layer on the first light emitting layer;
A second light emitting layer on the intermediate conductive layer;
A second electrode on the second light emitting layer ,
The intermediate conductive layer comprises a layer which has a hole-injecting contact and a layer responsible for electron injection, a layer responsible for the electron injection,
At least one of the layer responsible for electron injection and the layer responsible for hole injection is an island-shaped layer.
第２の電極とを積層してなり、
前記中間導電層は電子注入を担う層と、前記電子注入を担う層と接する正孔注入層を担う層とを含み、
前記電子注入を担う層と前記正孔注入層を担う層の少なくとも一方は島状の層であることを特徴とする発光素子。 A first electrode, a plurality of light emitting layers, a plurality of intermediate conductive layers sandwiched between the plurality of light emitting layers,
The second electrode is laminated,
The intermediate conductive layer comprises a layer which has a layer which has an electron injection, a hole injection layer in contact with the layer which has the electron injection,
At least one of the layer responsible for the electron injection and the layer responsible for the hole injection layer is an island-shaped layer.
ｋ番目（ｋは、１≦ｋ≦（ｎ−１）なる整数）の発光層と（ｋ＋１）番目の発光層との間には、中間導電層が含まれ、
前記中間導電層には電子注入を担う層と、前記電子注入を担う層と接する正孔注入を担う層とを含み、
前記電子注入を担う層と前記正孔注入を担う層の少なくとも一方は島状の層であることを特徴とする発光素子。 Between the first electrode and the second electrode, n-th from the first (n is an integer of 2 or more) Ri name by sequentially stacking the n light-emitting layer to,
An intermediate conductive layer is included between the kth (k is an integer 1 ≦ k ≦ (n−1)) light emitting layer and the ( k + 1 ) th light emitting layer,
The includes a layer which has an electron injection in the intermediate conductive layer, and a layer which has a hole-injecting contact with the layer which has the electron injection,
At least one of the layer responsible for electron injection and the layer responsible for hole injection is an island-shaped layer.
前記電子注入を担う層は、Ｍｇ−Ａｇ合金、Ａｌ−Ｌｉ合金、Ｍｇ−Ｌｉ合金、Ｃａ３Ｎ２又はＭｇ３Ｎ２を含むことを特徴とする発光素子。 In any one of claims 1 to 3,
The layer responsible for electron injection includes a Mg—Ag alloy , an Al—Li alloy , a Mg—Li alloy , Ca 3 N 2 or Mg 3 N 2 .
前記正孔注入を担う層は、金、アルミニウム、白金、銅又はニッケルを含むことを特徴とする発光素子。 In any one of claims 1 to 4,
The layer responsible for hole injection contains gold, aluminum, platinum, copper, or nickel.
前記発光素子は、
第１の電極と、
前記第１の電極上の第１の発光層と、
前記第１の発光層上の中間導電層と、
前記中間導電層上の第２の発光層と、
前記第２の発光層上の第２の電極とを有し、
前記中間導電層は電子注入を担う層と、前記電子注入を担う層と接する正孔注入を担う層を含み、
前記電子注入を担う層と前記正孔注入を担う層の少なくとも一方は島状の層であることを特徴とする表示装置。 A transistor provided on a substrate; and a light-emitting element connected to the transistor through an interlayer insulating film;
The light emitting element is
A first electrode;
A first light emitting layer on the first electrode;
An intermediate conductive layer on the first light emitting layer;
A second light emitting layer on the intermediate conductive layer;
A second electrode on the second light emitting layer ,
The intermediate conductive layer includes a layer responsible for electron injection and a layer responsible for hole injection in contact with the layer responsible for electron injection,
At least one of the layer responsible for electron injection and the layer responsible for hole injection is an island-shaped layer.
前記発光素子は、
第１の電極と、複数の発光層と、前記複数の発光層の間に挟まれた複数の中間導電層と、
第２の電極とを積層してなり、
前記中間導電層は電子注入を担う層と、前記電子注入を担う層と接する正孔注入層を担う層とを含み、
前記電子注入を担う層と前記正孔注入層を担う層の少なくとも一方は島状の層であることを特徴とする表示装置。 A transistor provided on a substrate; and a light-emitting element connected to the transistor through an interlayer insulating film;
The light emitting element is
A first electrode, a plurality of light emitting layers, a plurality of intermediate conductive layers sandwiched between the plurality of light emitting layers,
The second electrode is laminated,
The intermediate conductive layer comprises a layer which has a layer which has an electron injection, a hole injection layer in contact with the layer which has the electron injection,
Display device comprising at least one layer responsible for the hole injection layer and the layer which has the electron injection is an island-like layer.
前記発光素子は、
第１の電極と第２の電極の間に、１番目からｎ番目（ｎは２以上の整数）までのｎ個の発光層を順次積層してなり、
ｋ番目（ｋは、１≦ｋ≦（ｎ−１）なる整数）の発光層と（ｋ＋１）番目の発光層との間には、中間導電層が含まれ、
前記中間導電層には電子注入を担う層と、前記電子注入を担う層と接する正孔注入を担う層とを含み、
前記電子注入を担う層と前記正孔注入を担う層の少なくとも一方は島状の層であることを特徴とする表示装置。 A transistor provided on a substrate; and a light-emitting element connected to the transistor through an interlayer insulating film;
The light emitting element is
Between the first electrode and the second electrode, n-th from the first (n is an integer of 2 or more) Ri name by sequentially stacking the n light-emitting layer to,
An intermediate conductive layer is included between the kth (k is an integer 1 ≦ k ≦ (n−1)) light emitting layer and the ( k + 1 ) th light emitting layer,
The includes a layer which has an electron injection in the intermediate conductive layer, and a layer which has a hole-injecting contact with the layer which has the electron injection,
At least one of the layer responsible for electron injection and the layer responsible for hole injection is an island-shaped layer.
前記電子注入を担う層は、Ｍｇ−Ａｇ合金、Ａｌ−Ｌｉ合金、Ｍｇ−Ｌｉ合金、Ｃａ３Ｎ２又はＭｇ３Ｎ２を含むことを特徴とする表示装置。 In any one of claims 6 to 8,
The display device characterized in that the layer responsible for electron injection includes Mg—Ag alloy , Al—Li alloy , Mg—Li alloy , Ca 3 N 2 or Mg 3 N 2 .
前記正孔注入を担う層は、金、アルミニウム、白金、銅又はニッケルを含むことを特徴とする表示装置。 In any one of claims 6 to 9,
The display device, wherein the layer responsible for hole injection includes gold, aluminum, platinum, copper, or nickel.
前記層間絶縁膜は炭素を含み、かつ遮光性を有することを特徴とする表示装置。 In any one of claims 6 to 10,
The display device, wherein the interlayer insulating film contains carbon and has a light shielding property.
前記発光素子に接して、炭素を含み、かつ遮光性を有する隔壁層が設けられていることを特徴とする表示装置。 In any one of claims 6 to 11,
A display device comprising a partition layer containing carbon and having a light-shielding property in contact with the light-emitting element.
前記トランジスタと前記発光素子は、アルミニウム及びニッケルを含む合金からなる配線によって接続されていることを特徴とする表示装置。 In any one of Claim 6 thru | or 12,
The display device, wherein the transistor and the light emitting element are connected by a wiring made of an alloy containing aluminum and nickel.
前記トランジスタと前記発光素子は、アルミニウムと、ニッケルと、炭素を含む合金からなる配線によって接続されていることを特徴とする表示装置。
In any one of Claim 6 thru | or 12,
The display device, wherein the transistor and the light-emitting element are connected to each other by a wiring made of an alloy containing aluminum, nickel, and carbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005146844A JP4731996B2 (en) | 2004-05-20 | 2005-05-19 | Light emitting element and display device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004151103 | 2004-05-20 | ||
| JP2004151103 | 2004-05-20 | ||
| JP2005146844A JP4731996B2 (en) | 2004-05-20 | 2005-05-19 | Light emitting element and display device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010225001A Division JP5005081B2 (en) | 2004-05-20 | 2010-10-04 | Light emitting element and display device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006005340A JP2006005340A (en) | 2006-01-05 |
| JP2006005340A5 true JP2006005340A5 (en) | 2008-05-22 |
| JP4731996B2 JP4731996B2 (en) | 2011-07-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005146844A Expired - Fee Related JP4731996B2 (en) | 2004-05-20 | 2005-05-19 | Light emitting element and display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4731996B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101855743B (en) | 2007-11-13 | 2012-10-10 | 国立大学法人北陆先端科学科技大学院大学 | Organic el element |
| KR101708847B1 (en) * | 2010-04-08 | 2017-02-22 | 삼성디스플레이 주식회사 | Organic light emitting diode display and method for manufacturing the same |
| CN102388674B (en) * | 2010-06-28 | 2016-01-20 | 株式会社日本有机雷特显示器 | Organic illuminating element and manufacture method, organic display panel, organic display device |
| JP2012022787A (en) * | 2010-07-12 | 2012-02-02 | Seiko Epson Corp | Organic el device, method for manufacturing organic el device, and electronic apparatus |
| WO2013024787A1 (en) | 2011-08-12 | 2013-02-21 | パナソニック株式会社 | Organic electroluminescent element |
| JP6061581B2 (en) | 2012-09-19 | 2017-01-18 | ソニーセミコンダクタソリューションズ株式会社 | Display device |
| JP6247446B2 (en) * | 2013-02-26 | 2017-12-13 | 株式会社半導体エネルギー研究所 | Driving method of light emitting device |
| JP6235657B2 (en) * | 2016-07-08 | 2017-11-22 | ソニーセミコンダクタソリューションズ株式会社 | Display device |
| JP2017002410A (en) * | 2016-09-27 | 2017-01-05 | 大日本印刷株式会社 | Vapor deposition mask |
| KR102631177B1 (en) * | 2018-12-28 | 2024-01-29 | 엘지디스플레이 주식회사 | Electroluminance Lighting Device |
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| JP3476035B2 (en) * | 1995-02-10 | 2003-12-10 | 出光興産株式会社 | Organic electroluminescence device |
| JP4354019B2 (en) * | 1997-04-18 | 2009-10-28 | 出光興産株式会社 | Organic electroluminescence device |
| JPH10255982A (en) * | 1997-03-06 | 1998-09-25 | Hokuriku Electric Ind Co Ltd | Organic electroluminescent(el) element |
| JP3571171B2 (en) * | 1997-05-08 | 2004-09-29 | 出光興産株式会社 | Organic electroluminescence device |
| JP3884564B2 (en) * | 1998-05-20 | 2007-02-21 | 出光興産株式会社 | Organic EL light emitting device and light emitting device using the same |
| JP2002093586A (en) * | 2000-09-19 | 2002-03-29 | Semiconductor Energy Lab Co Ltd | Luminescence equipment and its producing method |
| JP4611578B2 (en) * | 2001-07-26 | 2011-01-12 | 淳二 城戸 | Organic electroluminescent device |
| JP2003089864A (en) * | 2001-09-18 | 2003-03-28 | Mitsui Mining & Smelting Co Ltd | Aluminum alloy thin film, wiring circuit having the same thin film, and target material depositing the thin film |
| JP2003264085A (en) * | 2001-12-05 | 2003-09-19 | Semiconductor Energy Lab Co Ltd | Organic semiconductor element, organic electroluminescence element and organic solar cell |
| JP3953330B2 (en) * | 2002-01-25 | 2007-08-08 | 三洋電機株式会社 | Display device |
| US6872472B2 (en) * | 2002-02-15 | 2005-03-29 | Eastman Kodak Company | Providing an organic electroluminescent device having stacked electroluminescent units |
| JP2003332070A (en) * | 2002-05-16 | 2003-11-21 | Seiko Epson Corp | Electro-optical device, its manufacturing method, and electronic apparatus |
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| JP3961985B2 (en) * | 2003-05-28 | 2007-08-22 | 出光興産株式会社 | Organic electroluminescence device |
| JP3748110B1 (en) * | 2003-09-26 | 2006-02-22 | 株式会社半導体エネルギー研究所 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE USING THE SAME |
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2005
- 2005-05-19 JP JP2005146844A patent/JP4731996B2/en not_active Expired - Fee Related
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