JP2006003370A5 - - Google Patents
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- JP2006003370A5 JP2006003370A5 JP2005238300A JP2005238300A JP2006003370A5 JP 2006003370 A5 JP2006003370 A5 JP 2006003370A5 JP 2005238300 A JP2005238300 A JP 2005238300A JP 2005238300 A JP2005238300 A JP 2005238300A JP 2006003370 A5 JP2006003370 A5 JP 2006003370A5
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- electron beam
- sample
- beam apparatus
- electron
- defect
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Claims (12)
前記電子源より放射された第一の電子線を前記試料の第一の領域に走査して前記試料の正極性に帯電させる手段と、
前記正極性に帯電した前記試料の第一の領域内の第二の領域に前記電子源より放射された、前記第一の電子線よりもビーム径の小さい第二の電子線を走査して発生した二次電子を前記検出器で検出し、
該検出した結果から前記試料の開口パターンの欠陥を検出する手段とを備えることを特徴とする電子線装置。 An electron source, an objective lens for irradiating the electron beam radiated from the electron source to a sample on which a pattern including an aperture pattern is formed, a sample stage on which the sample is placed, and the electron beam of the sample In an electron beam apparatus comprising at least a deflector that scans or irradiates a desired region and a detector that detects secondary electrons generated by irradiating the sample with the electron beam,
Means for scanning the first region of the sample with the first electron beam emitted from the electron source and charging it to the positive polarity of the sample;
Generated by scanning a second electron beam emitted from the electron source and having a beam diameter smaller than that of the first electron beam in a second region in the first region of the positively charged sample. The detected secondary electrons are detected by the detector,
An electron beam apparatus comprising: means for detecting a defect in the opening pattern of the sample from the detection result.
前記電子源より放射された第一の電子線を前記試料の第一の領域に走査して前記試料の開口部と開口欠陥部の孔底において電位差が発生するように正極性に帯電させる手段と、
前記正極性に帯電した前記試料の第一の領域内の第二の領域に前記電子源より放射された、前記第一の電子線よりもビーム径の小さい第二の電子線を走査して発生した二次電子を前記検出器で検出し、
該検出器からの信号に基づいて電位コントラスト及び前記開口部の寸法を算出する手段と、該電位コントラスト及び前記開口部の寸法から前記試料における欠陥の種類を判定する手段とを備えることを特徴とする電子線装置。 An electron source, an objective lens for irradiating the electron beam radiated from the electron source to a sample on which a pattern including an aperture pattern is formed, a sample stage on which the sample is placed, and the electron beam of the sample In an electron beam apparatus comprising at least a deflector that scans or irradiates a desired region and a detector that detects secondary electrons generated by irradiating the sample with the electron beam,
Means for positively charging the first electron beam emitted from the electron source to scan the first region of the sample so as to generate a potential difference at the hole bottom of the opening and the defect of the sample; ,
Generated by scanning a second electron beam emitted from the electron source and having a beam diameter smaller than that of the first electron beam in a second region in the first region of the positively charged sample. The detected secondary electrons are detected by the detector,
A means for calculating a potential contrast and a size of the opening based on a signal from the detector; and a means for determining the type of defect in the sample from the potential contrast and the size of the opening. An electron beam device.
前記電子線の照射エネルギーまたはビーム径を少なくとも制御する制御手段を備えること
を特徴とする電子線装置。 The electron beam apparatus according to claim 1 or 2,
An electron beam apparatus comprising control means for controlling at least irradiation energy or beam diameter of the electron beam.
前記試料表面の帯電電圧を制御する手段を備えることを特徴とする電子線装置。 The electron beam apparatus according to claim 1 or 2,
An electron beam apparatus comprising means for controlling a charging voltage on the sample surface.
前記検出器で検出された結果を画像化する画像処理手段と、
前記画像化された検出結果を表示する表示手段とを備えることを特徴とする電子線装置。 The electron beam apparatus according to claim 1,
Image processing means for imaging the result detected by the detector;
An electron beam apparatus comprising: display means for displaying the imaged detection result.
前記検出された結果を基に前記欠陥の種類を判定し、分類する手段を備えることを特徴と
する電子線装置。 The electron beam apparatus according to claim 1,
An electron beam apparatus comprising: means for determining and classifying the type of the defect based on the detected result.
前記第一及び第二の電子線を走査または照射して発生した二次電子を弁別するエネルギーフィルターを備えることを特徴とする電子線装置。 The electron beam apparatus according to claim 1 or 2,
An electron beam apparatus comprising: an energy filter that discriminates secondary electrons generated by scanning or irradiating the first and second electron beams.
前記検出した欠陥の情報から欠陥発生プロセスを特定する手段を備えることを特徴とする電子線装置。 The electron beam apparatus according to claim 1 or 2,
An electron beam apparatus comprising: means for identifying a defect occurrence process from information on the detected defect.
前記開口欠陥部の孔底における膜厚を測定する手段を備えることを特徴とする電子線装置。 The electron beam apparatus according to claim 1 or 2,
An electron beam apparatus comprising: means for measuring a film thickness at a hole bottom of the opening defect portion.
前記第一の電子線の照射エネルギーは１００エレクトロンボルトから１０００エレクトロンボルトの間であることを特徴とする電子線装置。 In the inspection method according to claim 1 or 2,
The electron beam apparatus according to claim 1, wherein the irradiation energy of the first electron beam is between 100 electron volts and 1000 electron volts.
前記試料の帯電電圧は５ボルト以上５０ボルト以下であることを特徴とする電子線装置。 The electron beam apparatus according to claim 1 or 2,
The electron beam apparatus according to claim 1, wherein a charging voltage of the sample is 5 volts or more and 50 volts or less.
前記試料における前記欠陥の面内分布または前記欠陥の種類を判定した結果を表示する手段を備えることを特徴とする電子線装置。 The electron beam apparatus according to claim 2,
An electron beam apparatus comprising: means for displaying a result of determining an in-plane distribution of the defect or the type of the defect in the sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005238300A JP4147233B2 (en) | 2005-08-19 | 2005-08-19 | Electron beam equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005238300A JP4147233B2 (en) | 2005-08-19 | 2005-08-19 | Electron beam equipment |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001084232A Division JP3973372B2 (en) | 2001-03-23 | 2001-03-23 | Substrate inspection apparatus and substrate inspection method using charged particle beam |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008055956A Division JP4728361B2 (en) | 2008-03-06 | 2008-03-06 | Substrate inspection apparatus and substrate inspection method using charged particle beam |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006003370A JP2006003370A (en) | 2006-01-05 |
| JP2006003370A5 true JP2006003370A5 (en) | 2006-05-11 |
| JP4147233B2 JP4147233B2 (en) | 2008-09-10 |
Family
ID=35771851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005238300A Expired - Fee Related JP4147233B2 (en) | 2005-08-19 | 2005-08-19 | Electron beam equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4147233B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007086400A1 (en) * | 2006-01-25 | 2007-08-02 | Ebara Corporation | Method and apparatus for inspecting sample surface |
| JP5117080B2 (en) | 2007-03-07 | 2013-01-09 | 株式会社日立ハイテクノロジーズ | Sample observation condition setting method and apparatus, and sample observation method and apparatus |
| US10446359B2 (en) | 2015-01-28 | 2019-10-15 | Hitachi High-Technologies Corporation | Charged particle beam device |
-
2005
- 2005-08-19 JP JP2005238300A patent/JP4147233B2/en not_active Expired - Fee Related
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