JP2004014207A5 - - Google Patents
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- JP2004014207A5 JP2004014207A5 JP2002163701A JP2002163701A JP2004014207A5 JP 2004014207 A5 JP2004014207 A5 JP 2004014207A5 JP 2002163701 A JP2002163701 A JP 2002163701A JP 2002163701 A JP2002163701 A JP 2002163701A JP 2004014207 A5 JP2004014207 A5 JP 2004014207A5
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- inspection apparatus
- sample
- diaphragm
- central hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (6)
前記電子線を走査する偏向器と、
対物レンズと、
試料を載置する試料台と、
前記電子線を前記試料に照射して発生した二次電子を検出する検出器と、
前記電子線を分割する絞りとを備え、
前記絞りによって分割された第一の電子線と第二の電子線を前記試料に照射して、該第二の電子線によって前記試料の所望の領域を帯電させ、
該帯電させた領域に前記第一の電子線を照射することを特徴とする検査装置。An electron source that generates an electron beam;
A deflector for scanning the electron beam;
An objective lens;
A sample stage on which the sample is placed;
A detector for detecting secondary electrons generated by irradiating the sample with the electron beam;
A diaphragm for dividing the electron beam,
Irradiating the sample with a first electron beam and a second electron beam divided by the aperture, charging a desired region of the sample with the second electron beam,
An inspection apparatus for irradiating the charged region with the first electron beam.
電子線を非検査半導体回路パターン上に集束する対物レンズと、
前記電子線の電流量を調整するための絞りと、
前記電子線を被検査半導体回路パターンの所望の位置に位置付けるための偏向器と、
絶縁物を含む前記被検査回路パターンの第一の領域と第二の領域の画像を前記電子線により取得した画像を比較することで前記被検査半導体回路パターンの欠陥を検査する検査装置において、
前記絞りは前記電子線の光軸上に配置された中心孔と、前記中心孔の周囲に中心孔よりも小さい孔を一個または複数個有することを特徴とする検査装置。An electron source that generates an electron beam;
An objective lens for focusing the electron beam on the non-inspection semiconductor circuit pattern;
A diaphragm for adjusting the amount of current of the electron beam;
A deflector for positioning the electron beam at a desired position of the semiconductor circuit pattern to be inspected;
In an inspection apparatus for inspecting a defect of the semiconductor circuit pattern to be inspected by comparing an image obtained by the electron beam with an image of the first area and the second area of the circuit pattern to be inspected including an insulator,
2. The inspection apparatus according to claim 1, wherein the diaphragm has a central hole disposed on the optical axis of the electron beam and one or a plurality of holes smaller than the central hole around the central hole.
前記絞りは前記電子線の光軸上に配置された中心孔と、前記中心孔の周囲に中心孔よりも小さい孔を一個または複数個有することを特徴とする検査装置。The inspection apparatus according to claim 1,
2. The inspection apparatus according to claim 1, wherein the diaphragm has a central hole disposed on the optical axis of the electron beam and one or a plurality of holes smaller than the central hole around the central hole.
前記第一の電子線の電流量と比較して、前記第二の電子線の電流量は十分小さいことを特徴とする検査装置。The inspection apparatus according to claim 1,
The inspection apparatus, wherein the current amount of the second electron beam is sufficiently smaller than the current amount of the first electron beam.
前記絞りの中心孔の中心と周囲の小さい孔の中心の距離は、周囲の小さい孔を通過した前記電子線が前記対物レンズ中心軸の十分外側を通過し、中心孔を通過した前記電子線が前記半導体回路パターン上に焦点を結ぶ場所よりも離れた位置に照射されることを特徴とする検査装置。In the inspection apparatus of the semiconductor circuit pattern in any one of Claim 1 to 3,
The distance between the center of the center hole of the diaphragm and the center of the surrounding small hole is that the electron beam that has passed through the small peripheral hole passes sufficiently outside the central axis of the objective lens, and the electron beam that has passed through the central hole is The inspection apparatus irradiates the semiconductor circuit pattern at a position distant from a place where the focal point is formed.
前記電子線を走査する偏向器と、
対物レンズと、
試料を載置する試料台と、
前記電子線を前記試料に照射して発生した二次電子を検出する検出器と、
前記電子線を分割する絞りとを備えることを特徴とする検査装置。An electron source that generates an electron beam;
A deflector for scanning the electron beam;
An objective lens;
A sample stage on which the sample is placed;
A detector for detecting secondary electrons generated by irradiating the sample with the electron beam;
An inspection apparatus comprising: a diaphragm for dividing the electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002163701A JP4178003B2 (en) | 2002-06-05 | 2002-06-05 | Semiconductor circuit pattern inspection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002163701A JP4178003B2 (en) | 2002-06-05 | 2002-06-05 | Semiconductor circuit pattern inspection system |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004014207A JP2004014207A (en) | 2004-01-15 |
| JP2004014207A5 true JP2004014207A5 (en) | 2005-10-06 |
| JP4178003B2 JP4178003B2 (en) | 2008-11-12 |
Family
ID=30432051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002163701A Expired - Fee Related JP4178003B2 (en) | 2002-06-05 | 2002-06-05 | Semiconductor circuit pattern inspection system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4178003B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3984521B2 (en) * | 2002-09-20 | 2007-10-03 | 松下電器産業株式会社 | Observation method using a transmission electron microscope |
| US7256606B2 (en) * | 2004-08-03 | 2007-08-14 | Applied Materials, Inc. | Method for testing pixels for LCD TFT displays |
| WO2008149461A1 (en) * | 2007-06-08 | 2008-12-11 | Advantest Corporation | Charged particle beam inspection apparatus and method for inspecting charged particle beam |
| GB0713276D0 (en) * | 2007-07-09 | 2007-08-15 | Medical Res Council | Transmission electron microscope |
| US7994476B2 (en) * | 2007-11-05 | 2011-08-09 | Applied Materials Israel, Ltd. | Apparatus and method for enhancing voltage contrast of a wafer |
-
2002
- 2002-06-05 JP JP2002163701A patent/JP4178003B2/en not_active Expired - Fee Related
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