JP2005539463A - 結晶方位依存性異方性エッチングによる複数のシリコン<110>ウェハ上の複数の圧電薄膜共振器の作製 - Google Patents
結晶方位依存性異方性エッチングによる複数のシリコン<110>ウェハ上の複数の圧電薄膜共振器の作製 Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49133—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
- Y10T29/49135—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting and shaping, e.g., cutting or bending, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T29/49002—Electrical device making
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- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (30)
- 1つの基板上に形成される1つの圧電薄膜共振器であって、
1つの第1主要表面および1つの第2主要表面を備える1つの圧電材料層と、
前記圧電材料層の前記第1主要表面と接触する1つの部分を備える1つの第1導電層と、前記圧電材料層の前記第2表面と接触する1つの第2導電層であって、前記圧電材料の少なくとも一部が前記第1導電層と前記第2導電層との間に挟まれており、前記基板が、前記第1導電層を剥き出しにする1つの開口を中に有し、前記開口が1つの平行四辺形の形状を実質的にしており、前記平行四辺形が1つの第1対の複数の平行な辺および1つの第2対の複数の平行な辺を備え、前記第1対の複数の平行な辺が前記第2対の複数の平行な辺とともに90度以外である1つの角度を成す第2導電層と
を備える、圧電薄膜共振器。 - 前記第1導電層が1つの略平行四辺形の形状を有する、請求項1に記載の圧電薄膜共振器。
- 前記第2導電層が1つの略平行四辺形の形状を有する、請求項2に記載の圧電薄膜共振器。
- 前記圧電材料層が1つの略平行四辺形の形状を有する、請求項1に記載の圧電薄膜共振器。
- 前記平行四辺形が1つの略菱形の形状を有する、請求項1に記載の圧電薄膜共振器。
- 前記略平行四辺形の形状を有する開口が1つの第1側壁および1つの第2側壁を有し、前記略平行四辺形の形状を有する開口の前記第1側壁と前記略平行四辺形の形状を有する開口の前記第2側壁との間の前記角度が約67度〜74度の範囲内である、請求項1に記載の圧電薄膜共振器。
- 前記略平行四辺形の形状を有する開口が1つの第1側壁および1つの第2側壁を有し、前記略平行四辺形の形状を有する開口の前記第1側壁と前記略平行四辺形の形状を有する開口の前記第2側壁との間の前記角度が約70.5度である、請求項1に記載の圧電薄膜共振器。
- 前記基板が<110>シリコンである、請求項7に記載の圧電薄膜共振器。
- 前記基板が<110>シリコンである、請求項1に記載の圧電薄膜共振器。
- 前記平行四辺形の形状を有する開口を備える前記基板も1つの平行四辺形の形状を有する、請求項1に記載の圧電薄膜共振器。
- 前記略平行四辺形の形状を有する開口が1つの第1側壁および1つの第2側壁を有し、前記略平行四辺形の形状を有する開口の前記第1側壁および前記略平行四辺形の形状を有する開口の前記第2側壁のうちの少なくとも1つが前記基板の1つの主要表面に対して垂直である、請求項1に記載の圧電薄膜共振器。
- 前記略平行四辺形の形状を有する開口が1つの第1側壁および1つの第2側壁を有し、前記略平行四辺形の形状を有する開口の前記第1側壁および前記略平行四辺形の形状を有する開口の前記第2側壁のうちの少なくとも1つが前記圧電層の1つの主要表面に対して垂直である、請求項1に記載の圧電薄膜共振器。
- 1つの<110>シリコン基板上に1つの素子を形成するための1つの方法であって、
前記基板上へ1つの第1導電層を形成する段階と、
1つの第1導電層の前記第1部分の上へ1つの圧電層を形成する段階と、
前記圧電層の上へ1つの第2電極を形成する段階と、
前記圧電層および前記第1導電層の下にある前記基板の1つの裏面部分を1回の結晶方位依存性エッチングにより除去する段階と
を備える、方法。 - 前記基板上に前記第1導電層を形成する段階が、前記第1導電層を1つの略平行四辺形として形成する段階を備える、請求項13に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 前記基板上に前記第1導電層を形成する段階が前記第1導電層を1つの略平行四辺形として形成する段階を備え、この平行四辺形が、相互に対して約67度〜74度の範囲内である1つの角度を成す2つの辺を備える、請求項13に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 前記基板上に前記圧電層を形成する段階が、前記圧電層を1つの略平行四辺形として形成する段階を備える、請求項13に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 前記基板上に前記圧電層を形成する段階が前記圧電層を1つの略平行四辺形として形成する段階を備え、前記平行四辺形が、相互に対して約67度〜74度の範囲内である1つの角度を成す2つの辺を備える、請求項13に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 前記基板上に前記圧電層を形成する段階が、前記圧電層を1つの略菱形として形成する段階を備える、請求項13に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 前記基板上に前記第2導電層を形成する段階が、前記第2導電層を1つの略平行四辺形として形成する段階を備える、請求項13に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 前記基板上に前記第2導電層を形成する段階が前記第2導電層を1つの略平行四辺形として形成する段階を備え、この平行四辺形が、相互に対して約67度〜74度の範囲内である1つの角度を成す2つの辺を備える、請求項13に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 前記基板の1つの裏面部分を除去する段階が、前記素子の前記第1導電層に対して実質的に垂直な複数の側壁を備えた1つの開口を形成する段階を備える、請求項13に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 前記基板の1つの裏面部分を除去する段階が、前記基板の前記第1あるいは第2主要表面に対して実質的に垂直な複数の側壁を備えた1つの開口を形成する段階を備える、請求項13に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 前記基板の1つの裏面部分を除去する段階が、
前記基板の前記主要裏側表面を1つの平行四辺形の形状にマスキングする段階と、
前記第1導電層に到達するまで前記結晶方位依存性エッチング液を施す段階と
を備える、請求項13に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。 - 1つの第1組の複数の側壁が第2組の複数の側壁よりも長い前記平行四辺形が形成される、請求項23に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 1つの第1組の複数の側壁が第2組の複数の側壁の少なくとも2倍の長さである前記平行四辺形が形成される、請求項23に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 前記結晶方位依存性エッチング液が水酸化カリウム(KOH)である、請求項23に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 前記結晶方位依存性エッチング液がエチレン・ジアミン・ピロカテコール(EDP)である、請求項23に記載の1つの<110>シリコン基板上に1つの素子を形成する方法。
- 1つの<110>シリコン基板上に複数の素子を形成するための1つの方法であって、前記方法が、
前記基板上に1つの第1導電層を施す段階と、
1つの第1導電層の前記第1部分の上に1つの圧電層を施す段階と、
前記圧電層上に1つの第2電極を施す段階と、
前記第1導電層と前記圧電層と前記第2電極とを平行四辺形の形状を有する複数の素子になるように形成する段階と、
実質的に同時に基板上に形成された、前記複数の素子の下にある前記基板の1つの裏面部分を1回の結晶方位依存性エッチングにより除去する段階と
を備える、方法。 - 前記基板の前記裏面部分を除去する段階が、複数の素子の前記第1導電層の下に配置されて平行四辺形の形状をしている複数の開口を中に備えた1つのマスクを形成する段階を備える、請求項28に記載の方法。
- 前記基板の前記裏面部分を除去する段階が、複数の素子の前記第1導電層の下に配置されて平行四辺形の形状をしている複数の開口を中に備えた1つのマスクを形成する段階を備え、前記平行四辺形の形状を有する複数の開口が相互に対して約67度〜74度の範囲内の1つの角度を成す2つの辺を備える、請求項28に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/254,402 US7152289B2 (en) | 2002-09-25 | 2002-09-25 | Method for forming bulk resonators silicon <110> substrate |
PCT/US2003/029532 WO2004030208A2 (en) | 2002-09-25 | 2003-09-17 | Fabrication of film bulk acoustic resonators on silicon <110> wafers using crystal-orientation-dependent anisotropic etching |
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JP2005539463A true JP2005539463A (ja) | 2005-12-22 |
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JP2004540123A Pending JP2005539463A (ja) | 2002-09-25 | 2003-09-17 | 結晶方位依存性異方性エッチングによる複数のシリコン<110>ウェハ上の複数の圧電薄膜共振器の作製 |
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US (1) | US7152289B2 (ja) |
EP (1) | EP1543615A2 (ja) |
JP (1) | JP2005539463A (ja) |
CN (1) | CN1685609A (ja) |
AU (1) | AU2003272580A1 (ja) |
TW (1) | TWI243495B (ja) |
WO (1) | WO2004030208A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009175539A (ja) * | 2008-01-25 | 2009-08-06 | Hitachi Ltd | 液体プリズム及びそれを用いたプロジェクタ |
WO2022209580A1 (ja) * | 2021-03-31 | 2022-10-06 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び撮像装置の製造方法 |
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US7245594B1 (en) * | 2000-05-12 | 2007-07-17 | Qualcomm Incorporated | Method and apparatus for fast closed-loop rate adaptation in a high rate packet data transmission |
SE0104442D0 (sv) * | 2001-12-28 | 2001-12-28 | Ericsson Telefon Ab L M | Method for manufacturing a component and a component |
US7101789B2 (en) * | 2004-09-13 | 2006-09-05 | General Electric Company | Method of wet etching vias and articles formed thereby |
KR100666693B1 (ko) * | 2004-11-23 | 2007-01-11 | 삼성전자주식회사 | 모놀리식 듀플렉서 |
JP2006217281A (ja) * | 2005-02-03 | 2006-08-17 | Toshiba Corp | 薄膜バルク音響装置の製造方法 |
TWI272671B (en) * | 2005-10-03 | 2007-02-01 | Touch Micro System Tech | Method of forming a cavity by two-step etching and method of reducing dimension of an MEMS device |
JP2009033698A (ja) * | 2007-06-22 | 2009-02-12 | Panasonic Corp | ダイアフラム構造及び音響センサ |
CN102143906A (zh) * | 2008-09-10 | 2011-08-03 | 松下电器产业株式会社 | 微机电系统器件及其制造方法 |
CN103022339A (zh) * | 2012-12-28 | 2013-04-03 | 东南大学 | 正交型压电位移放大机构 |
KR101843244B1 (ko) | 2016-02-17 | 2018-05-14 | 삼성전기주식회사 | 음향 공진기 및 그 제조 방법 |
US10901021B2 (en) * | 2018-02-27 | 2021-01-26 | Applied Materials, Inc. | Method for detecting wafer processing parameters with micro resonator array sensors |
CN113228508A (zh) * | 2018-12-20 | 2021-08-06 | 三安日本科技株式会社 | 弹性波装置、弹性波滤波器、双工器及模块 |
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US4348609A (en) | 1979-04-20 | 1982-09-07 | Murata Manufacturing Co., Ltd. | Piezoelectric vibrator with spurious mode suppression |
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US4906840A (en) * | 1988-01-27 | 1990-03-06 | The Board Of Trustees Of Leland Stanford Jr., University | Integrated scanning tunneling microscope |
DD288032A5 (de) | 1989-09-19 | 1991-03-14 | Veb Geraete- U. Reglerwerke Teltow,De | Verfahren zur herstellung von (110)-orientierten siliziumplattenstreifen fuer mechanische sensoren |
US5067985A (en) * | 1990-06-08 | 1991-11-26 | The United States Of America As Represented By The Secretary Of The Air Force | Back-contact vertical-junction solar cell and method |
US5075641A (en) * | 1990-12-04 | 1991-12-24 | Iowa State University Research Foundation, Inc. | High frequency oscillator comprising cointegrated thin film resonator and active device |
US5185589A (en) | 1991-05-17 | 1993-02-09 | Westinghouse Electric Corp. | Microwave film bulk acoustic resonator and manifolded filter bank |
US5485038A (en) * | 1993-07-15 | 1996-01-16 | Hughes Aircraft Company | Microelectronic circuit substrate structure including photoimageable epoxy dielectric layers |
US5488504A (en) * | 1993-08-20 | 1996-01-30 | Martin Marietta Corp. | Hybridized asymmetric fabry-perot quantum well light modulator |
US5696423A (en) * | 1995-06-29 | 1997-12-09 | Motorola, Inc. | Temperature compenated resonator and method |
US5883012A (en) | 1995-12-21 | 1999-03-16 | Motorola, Inc. | Method of etching a trench into a semiconductor substrate |
US5714917A (en) * | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
DE19650111B4 (de) * | 1996-12-03 | 2004-07-01 | Siemens Solar Gmbh | Solarzelle mit geringer Abschattung und Verfahren zur Herstellung |
US5910756A (en) * | 1997-05-21 | 1999-06-08 | Nokia Mobile Phones Limited | Filters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators |
DE69804724T2 (de) * | 1997-07-25 | 2002-08-14 | Seiko Epson Corp | Tintenstrahldruckkopf und sein Herstellungsverfahren |
US6349454B1 (en) | 1999-07-29 | 2002-02-26 | Agere Systems Guardian Corp. | Method of making thin film resonator apparatus |
JP3954395B2 (ja) | 2001-10-26 | 2007-08-08 | 富士通株式会社 | 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法 |
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2002
- 2002-09-25 US US10/254,402 patent/US7152289B2/en not_active Expired - Fee Related
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2003
- 2003-09-09 TW TW092124867A patent/TWI243495B/zh not_active IP Right Cessation
- 2003-09-17 WO PCT/US2003/029532 patent/WO2004030208A2/en active Application Filing
- 2003-09-17 AU AU2003272580A patent/AU2003272580A1/en not_active Abandoned
- 2003-09-17 JP JP2004540123A patent/JP2005539463A/ja active Pending
- 2003-09-17 EP EP03754769A patent/EP1543615A2/en not_active Ceased
- 2003-09-17 CN CN03822845.9A patent/CN1685609A/zh active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009175539A (ja) * | 2008-01-25 | 2009-08-06 | Hitachi Ltd | 液体プリズム及びそれを用いたプロジェクタ |
WO2022209580A1 (ja) * | 2021-03-31 | 2022-10-06 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び撮像装置の製造方法 |
Also Published As
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WO2004030208A3 (en) | 2004-07-22 |
WO2004030208A2 (en) | 2004-04-08 |
EP1543615A2 (en) | 2005-06-22 |
US20040056560A1 (en) | 2004-03-25 |
TWI243495B (en) | 2005-11-11 |
US7152289B2 (en) | 2006-12-26 |
CN1685609A (zh) | 2005-10-19 |
AU2003272580A1 (en) | 2004-04-19 |
TW200425550A (en) | 2004-11-16 |
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