JP2005524198A - 電子電界エミッタおよびそれに関連する組成物 - Google Patents
電子電界エミッタおよびそれに関連する組成物 Download PDFInfo
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- JP2005524198A JP2005524198A JP2004500308A JP2004500308A JP2005524198A JP 2005524198 A JP2005524198 A JP 2005524198A JP 2004500308 A JP2004500308 A JP 2004500308A JP 2004500308 A JP2004500308 A JP 2004500308A JP 2005524198 A JP2005524198 A JP 2005524198A
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
- Y10S977/745—Carbon nanotubes, CNTs having a modified surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cold Cathode And The Manufacture (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37520602P | 2002-04-24 | 2002-04-24 | |
| PCT/US2003/012892 WO2003092030A1 (en) | 2002-04-24 | 2003-04-24 | Electron field emitter and compositions related thereto |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005524198A true JP2005524198A (ja) | 2005-08-11 |
| JP2005524198A5 JP2005524198A5 (enExample) | 2006-06-15 |
Family
ID=29270607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004500308A Withdrawn JP2005524198A (ja) | 2002-04-24 | 2003-04-24 | 電子電界エミッタおよびそれに関連する組成物 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7317277B2 (enExample) |
| EP (1) | EP1497842A1 (enExample) |
| JP (1) | JP2005524198A (enExample) |
| KR (1) | KR20040104597A (enExample) |
| CN (1) | CN1650384A (enExample) |
| AU (1) | AU2003223732A1 (enExample) |
| BR (1) | BR0309424A (enExample) |
| WO (1) | WO2003092030A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005183370A (ja) * | 2003-12-16 | 2005-07-07 | Samsung Sdi Co Ltd | カーボンナノチューブエミッターの形成方法 |
| JP2005299040A (ja) * | 2004-04-14 | 2005-10-27 | Sakai Ovex Co Ltd | 膨張化炭素繊維、その製造法およびそれを含む電界放出素子ならびに電界放出ディスプレイ |
| JP2008147169A (ja) * | 2006-12-07 | 2008-06-26 | Korea Electronics Telecommun | Ｃｎｔエミッタの製造方法 |
| KR101356632B1 (ko) * | 2012-04-12 | 2014-02-05 | 한국과학기술원 | 금속 바인더를 이용한 방전에 강한 고 안정성 탄소나노튜브 전계방출형 전자빔 에미터의 제조방법 및 이를 이용한 탄소나노튜브 전계방출형 전자빔 에미터 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7317277B2 (en) * | 2002-04-24 | 2008-01-08 | E.I. Du Pont De Nemours And Company | Electron field emitter and compositions related thereto |
| DE10361419A1 (de) * | 2003-12-22 | 2005-07-14 | Infineon Technologies Ag | Schichtenstruktur und ein Verfahren zur Herstellung einer Schichtenstruktur |
| KR20050087376A (ko) * | 2004-02-26 | 2005-08-31 | 삼성에스디아이 주식회사 | 평판표시소자의 전자방출원 형성용 조성물 및 이를 이용한전자방출원 |
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-
2003
- 2003-04-23 US US10/421,107 patent/US7317277B2/en not_active Expired - Fee Related
- 2003-04-24 AU AU2003223732A patent/AU2003223732A1/en not_active Abandoned
- 2003-04-24 JP JP2004500308A patent/JP2005524198A/ja not_active Withdrawn
- 2003-04-24 EP EP03719934A patent/EP1497842A1/en not_active Withdrawn
- 2003-04-24 CN CNA038091801A patent/CN1650384A/zh active Pending
- 2003-04-24 KR KR10-2004-7017009A patent/KR20040104597A/ko not_active Withdrawn
- 2003-04-24 WO PCT/US2003/012892 patent/WO2003092030A1/en not_active Ceased
- 2003-04-24 BR BR0309424-3A patent/BR0309424A/pt not_active Application Discontinuation
-
2007
- 2007-03-27 US US11/728,935 patent/US7750544B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005183370A (ja) * | 2003-12-16 | 2005-07-07 | Samsung Sdi Co Ltd | カーボンナノチューブエミッターの形成方法 |
| JP2005299040A (ja) * | 2004-04-14 | 2005-10-27 | Sakai Ovex Co Ltd | 膨張化炭素繊維、その製造法およびそれを含む電界放出素子ならびに電界放出ディスプレイ |
| JP2008147169A (ja) * | 2006-12-07 | 2008-06-26 | Korea Electronics Telecommun | Ｃｎｔエミッタの製造方法 |
| KR101356632B1 (ko) * | 2012-04-12 | 2014-02-05 | 한국과학기술원 | 금속 바인더를 이용한 방전에 강한 고 안정성 탄소나노튜브 전계방출형 전자빔 에미터의 제조방법 및 이를 이용한 탄소나노튜브 전계방출형 전자빔 에미터 |
Also Published As
| Publication number | Publication date |
|---|---|
| BR0309424A (pt) | 2005-02-01 |
| US20070170832A1 (en) | 2007-07-26 |
| US7317277B2 (en) | 2008-01-08 |
| AU2003223732A1 (en) | 2003-11-10 |
| WO2003092030A1 (en) | 2003-11-06 |
| US20040017141A1 (en) | 2004-01-29 |
| KR20040104597A (ko) | 2004-12-10 |
| CN1650384A (zh) | 2005-08-03 |
| US7750544B2 (en) | 2010-07-06 |
| EP1497842A1 (en) | 2005-01-19 |
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