CN1650384A - 电子场致发射体和与此相关的组合物 - Google Patents

电子场致发射体和与此相关的组合物 Download PDF

Info

Publication number
CN1650384A
CN1650384A CNA038091801A CN03809180A CN1650384A CN 1650384 A CN1650384 A CN 1650384A CN A038091801 A CNA038091801 A CN A038091801A CN 03809180 A CN03809180 A CN 03809180A CN 1650384 A CN1650384 A CN 1650384A
Authority
CN
China
Prior art keywords
composition
electron
electron emission
emitting material
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA038091801A
Other languages
English (en)
Chinese (zh)
Inventor
L·-T·A·程
D·H·罗奇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN1650384A publication Critical patent/CN1650384A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y10S977/745—Carbon nanotubes, CNTs having a modified surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CNA038091801A 2002-04-24 2003-04-24 电子场致发射体和与此相关的组合物 Pending CN1650384A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37520602P 2002-04-24 2002-04-24
US60/375,206 2002-04-24

Publications (1)

Publication Number Publication Date
CN1650384A true CN1650384A (zh) 2005-08-03

Family

ID=29270607

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA038091801A Pending CN1650384A (zh) 2002-04-24 2003-04-24 电子场致发射体和与此相关的组合物

Country Status (8)

Country Link
US (2) US7317277B2 (enExample)
EP (1) EP1497842A1 (enExample)
JP (1) JP2005524198A (enExample)
KR (1) KR20040104597A (enExample)
CN (1) CN1650384A (enExample)
AU (1) AU2003223732A1 (enExample)
BR (1) BR0309424A (enExample)
WO (1) WO2003092030A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7317277B2 (en) * 2002-04-24 2008-01-08 E.I. Du Pont De Nemours And Company Electron field emitter and compositions related thereto
KR20050060287A (ko) * 2003-12-16 2005-06-22 삼성에스디아이 주식회사 카본나노튜브 에미터의 형성방법
DE10361419A1 (de) * 2003-12-22 2005-07-14 Infineon Technologies Ag Schichtenstruktur und ein Verfahren zur Herstellung einer Schichtenstruktur
KR20050087376A (ko) * 2004-02-26 2005-08-31 삼성에스디아이 주식회사 평판표시소자의 전자방출원 형성용 조성물 및 이를 이용한전자방출원
JP2005272184A (ja) * 2004-03-23 2005-10-06 Honda Motor Co Ltd 親水性カーボンナノチューブの製造方法
JP4554260B2 (ja) * 2004-04-14 2010-09-29 サカイオーベックス株式会社 膨張化炭素繊維、その製造法およびそれを含む電界放出素子ならびに電界放出ディスプレイ
KR100752013B1 (ko) * 2006-06-28 2007-08-28 제일모직주식회사 전자 방출원 형성용 조성물, 전자 방출원의 제조방법,이로부터 제조되는 전자 방출원 및 이를 포함하는 평면표시 소자
KR100777113B1 (ko) * 2006-12-07 2007-11-19 한국전자통신연구원 미세패터닝이 가능한 고 신뢰성의 ｃｎｔ 에미터 제조 방법
US7763187B1 (en) * 2007-08-23 2010-07-27 Oceanit Laboratories, Inc. Carbon nanotubes-reinforced conductive silver ink
WO2009108226A2 (en) * 2007-11-15 2009-09-03 E. I. Du Pont De Nemours And Company Protection of carbon nanotubes
JP2011508387A (ja) * 2007-12-21 2011-03-10 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー レジネートを含有する水性現像可能な性能強化された光画像形成型カーボンナノチューブペースト
KR101356632B1 (ko) * 2012-04-12 2014-02-05 한국과학기술원 금속 바인더를 이용한 방전에 강한 고 안정성 탄소나노튜브 전계방출형 전자빔 에미터의 제조방법 및 이를 이용한 탄소나노튜브 전계방출형 전자빔 에미터

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857799A (en) 1986-07-30 1989-08-15 Sri International Matrix-addressed flat panel display
US5015912A (en) 1986-07-30 1991-05-14 Sri International Matrix-addressed flat panel display
EP0311298B1 (en) * 1987-10-06 1996-04-03 Cabotex Co. Ltd. Preparing an intercalation compound
US5618875A (en) 1990-10-23 1997-04-08 Catalytic Materials Limited High performance carbon filament structures
US5458784A (en) 1990-10-23 1995-10-17 Catalytic Materials Limited Removal of contaminants from aqueous and gaseous streams using graphic filaments
US5413866A (en) 1990-10-23 1995-05-09 Baker; R. Terry K. High performance carbon filament structures
US5149584A (en) 1990-10-23 1992-09-22 Baker R Terry K Carbon fiber structures having improved interlaminar properties
JP2544872B2 (ja) * 1991-11-06 1996-10-16 松下電工株式会社 無機多孔体の製造方法および金属粒子担持無機材の製造方法
JPH08505259A (ja) 1992-12-23 1996-06-04 エスアイ ダイアモンド テクノロジー，インコーポレイテッド フラットな電界放出カソードを用いたトライオード構造のフラットパネルディスプレイ
KR100307042B1 (ko) 1993-06-02 2001-12-17 맥거리 존 더블유. 비정질다이아몬드막플랫필드방출캐소드
US5463271A (en) * 1993-07-09 1995-10-31 Silicon Video Corp. Structure for enhancing electron emission from carbon-containing cathode
JP3335836B2 (ja) * 1996-03-15 2002-10-21 株式会社東芝 電子放出デバイス
TW353758B (en) * 1996-09-30 1999-03-01 Motorola Inc Electron emissive film and method
US5885728A (en) * 1997-04-04 1999-03-23 Ucar Carbon Technology Corporation Flexible graphite composite
EP0905737B1 (en) * 1997-09-30 2004-04-28 Noritake Co., Ltd. Electron-emitting source
JP3730476B2 (ja) 2000-03-31 2006-01-05 株式会社東芝 電界放出型冷陰極及びその製造方法
US7449081B2 (en) 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
JP2002105623A (ja) * 2000-09-27 2002-04-10 Kobe Steel Ltd カーボンオニオン薄膜およびその製造方法
GB0106358D0 (en) * 2001-03-13 2001-05-02 Printable Field Emitters Ltd Field emission materials and devices
DE60221951T2 (de) 2001-11-23 2008-05-15 Samsung SDI Co., Ltd., Suwon Zusammensetzung für Paste mit Kohlenstoffnanoröhren, diese Zusammensetzung verwendende Elektronen-emittierende Vorrichtung und deren Herstellungsverfahren
US7317277B2 (en) * 2002-04-24 2008-01-08 E.I. Du Pont De Nemours And Company Electron field emitter and compositions related thereto
US6798127B2 (en) * 2002-10-09 2004-09-28 Nano-Proprietary, Inc. Enhanced field emission from carbon nanotubes mixed with particles

Also Published As

Publication number Publication date
BR0309424A (pt) 2005-02-01
US20070170832A1 (en) 2007-07-26
US7317277B2 (en) 2008-01-08
AU2003223732A1 (en) 2003-11-10
WO2003092030A1 (en) 2003-11-06
US20040017141A1 (en) 2004-01-29
KR20040104597A (ko) 2004-12-10
JP2005524198A (ja) 2005-08-11
US7750544B2 (en) 2010-07-06
EP1497842A1 (en) 2005-01-19

Similar Documents

Publication Publication Date Title
US7750544B2 (en) Electron emitter composition made of an electron emitting substance and an expansion material for expansion of the electron emitting substance
JP4262976B2 (ja) 電子電界エミッタの放出状態を改善するための方法
CN1465086A (zh) 催化生成的碳纤维场致发射体和由此制得的场致发射体阴极
US7276844B2 (en) Process for improving the emission of electron field emitters
US20030222560A1 (en) Catalytically grown carbon fiber field emitters and field emitter cathodes made therefrom
JP5090917B2 (ja) 活性化させないカーボンナノチューブによる電界放出の増強法
CN101617384A (zh) 具有阳极涂层的场发射装置
US6537122B1 (en) Ion bombarded graphite electron emitters
US20110119896A1 (en) Method of making air-fired cathode assemblies in field emission devices
HK1078987A (en) Electron field emitter and compositions related thereto
HK1114944A (en) Method for production of water-absorbent resin

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1078987

Country of ref document: HK

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication
REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1078987

Country of ref document: HK