JP2005524198A - 電子電界エミッタおよびそれに関連する組成物 - Google Patents

電子電界エミッタおよびそれに関連する組成物 Download PDF

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Publication number
JP2005524198A
JP2005524198A JP2004500308A JP2004500308A JP2005524198A JP 2005524198 A JP2005524198 A JP 2005524198A JP 2004500308 A JP2004500308 A JP 2004500308A JP 2004500308 A JP2004500308 A JP 2004500308A JP 2005524198 A JP2005524198 A JP 2005524198A
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JP
Japan
Prior art keywords
electron
composition
film
expandable
paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004500308A
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English (en)
Japanese (ja)
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JP2005524198A5 (cg-RX-API-DMAC7.html
Inventor
チエング，ラプ−タク・アンドリユー
ローチ，デイビツド・ハーバート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2005524198A publication Critical patent/JP2005524198A/ja
Publication of JP2005524198A5 publication Critical patent/JP2005524198A5/ja
Withdrawn legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y10S977/745—Carbon nanotubes, CNTs having a modified surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2004500308A 2002-04-24 2003-04-24 電子電界エミッタおよびそれに関連する組成物 Withdrawn JP2005524198A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37520602P 2002-04-24 2002-04-24
PCT/US2003/012892 WO2003092030A1 (en) 2002-04-24 2003-04-24 Electron field emitter and compositions related thereto

Publications (2)

Publication Number Publication Date
JP2005524198A true JP2005524198A (ja) 2005-08-11
JP2005524198A5 JP2005524198A5 (cg-RX-API-DMAC7.html) 2006-06-15

Family

ID=29270607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004500308A Withdrawn JP2005524198A (ja) 2002-04-24 2003-04-24 電子電界エミッタおよびそれに関連する組成物

Country Status (8)

Country Link
US (2) US7317277B2 (cg-RX-API-DMAC7.html)
EP (1) EP1497842A1 (cg-RX-API-DMAC7.html)
JP (1) JP2005524198A (cg-RX-API-DMAC7.html)
KR (1) KR20040104597A (cg-RX-API-DMAC7.html)
CN (1) CN1650384A (cg-RX-API-DMAC7.html)
AU (1) AU2003223732A1 (cg-RX-API-DMAC7.html)
BR (1) BR0309424A (cg-RX-API-DMAC7.html)
WO (1) WO2003092030A1 (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183370A (ja) * 2003-12-16 2005-07-07 Samsung Sdi Co Ltd カーボンナノチューブエミッターの形成方法
JP2005299040A (ja) * 2004-04-14 2005-10-27 Sakai Ovex Co Ltd 膨張化炭素繊維、その製造法およびそれを含む電界放出素子ならびに電界放出ディスプレイ
JP2008147169A (ja) * 2006-12-07 2008-06-26 Korea Electronics Telecommun Ｃｎｔエミッタの製造方法
KR101356632B1 (ko) * 2012-04-12 2014-02-05 한국과학기술원 금속 바인더를 이용한 방전에 강한 고 안정성 탄소나노튜브 전계방출형 전자빔 에미터의 제조방법 및 이를 이용한 탄소나노튜브 전계방출형 전자빔 에미터

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7317277B2 (en) * 2002-04-24 2008-01-08 E.I. Du Pont De Nemours And Company Electron field emitter and compositions related thereto
DE10361419A1 (de) * 2003-12-22 2005-07-14 Infineon Technologies Ag Schichtenstruktur und ein Verfahren zur Herstellung einer Schichtenstruktur
KR20050087376A (ko) * 2004-02-26 2005-08-31 삼성에스디아이 주식회사 평판표시소자의 전자방출원 형성용 조성물 및 이를 이용한전자방출원
JP2005272184A (ja) * 2004-03-23 2005-10-06 Honda Motor Co Ltd 親水性カーボンナノチューブの製造方法
KR100752013B1 (ko) * 2006-06-28 2007-08-28 제일모직주식회사 전자 방출원 형성용 조성물, 전자 방출원의 제조방법,이로부터 제조되는 전자 방출원 및 이를 포함하는 평면표시 소자
US7763187B1 (en) * 2007-08-23 2010-07-27 Oceanit Laboratories, Inc. Carbon nanotubes-reinforced conductive silver ink
JP2011502945A (ja) * 2007-11-15 2011-01-27 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー カーボンナノチューブの保護
CN101939811A (zh) * 2007-12-21 2011-01-05 E.I.内穆尔杜邦公司 具有增强性能的含树脂酸盐的含水可显影感光碳纳米管浆料

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US4857799A (en) * 1986-07-30 1989-08-15 Sri International Matrix-addressed flat panel display
US5015912A (en) * 1986-07-30 1991-05-14 Sri International Matrix-addressed flat panel display
EP0647688A3 (en) * 1987-10-06 1996-03-27 Cabotex Co Ltd Conductive composition comprising a graphite intercalation compound.
US5149584A (en) * 1990-10-23 1992-09-22 Baker R Terry K Carbon fiber structures having improved interlaminar properties
US5413866A (en) * 1990-10-23 1995-05-09 Baker; R. Terry K. High performance carbon filament structures
US5618875A (en) * 1990-10-23 1997-04-08 Catalytic Materials Limited High performance carbon filament structures
US5458784A (en) * 1990-10-23 1995-10-17 Catalytic Materials Limited Removal of contaminants from aqueous and gaseous streams using graphic filaments
JP2544872B2 (ja) * 1991-11-06 1996-10-16 松下電工株式会社 無機多孔体の製造方法および金属粒子担持無機材の製造方法
DE69333555T2 (de) 1992-12-23 2005-08-18 Nano-Proprietary, Inc., Austin Flache Feldemissionskathode anwendende flache Anzeigevorrichtung mit Triodenstruktur
AU5897594A (en) 1993-06-02 1994-12-20 Microelectronics And Computer Technology Corporation Amorphic diamond film flat field emission cathode
US5463271A (en) * 1993-07-09 1995-10-31 Silicon Video Corp. Structure for enhancing electron emission from carbon-containing cathode
JP3335836B2 (ja) * 1996-03-15 2002-10-21 株式会社東芝 電子放出デバイス
TW353758B (en) * 1996-09-30 1999-03-01 Motorola Inc Electron emissive film and method
US5885728A (en) * 1997-04-04 1999-03-23 Ucar Carbon Technology Corporation Flexible graphite composite
DE69823441T2 (de) * 1997-09-30 2004-09-23 Noritake Co., Ltd., Nagoya Elektronen emittierende Quelle
JP3730476B2 (ja) * 2000-03-31 2006-01-05 株式会社東芝 電界放出型冷陰極及びその製造方法
US7449081B2 (en) 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
JP2002105623A (ja) * 2000-09-27 2002-04-10 Kobe Steel Ltd カーボンオニオン薄膜およびその製造方法
GB0106358D0 (en) * 2001-03-13 2001-05-02 Printable Field Emitters Ltd Field emission materials and devices
EP1315191B1 (en) 2001-11-23 2007-08-22 Samsung SDI Co. Ltd. Composite for paste including carbon nanotubes, electron emitting device using the same, and manufacturing method thereof
US7317277B2 (en) * 2002-04-24 2008-01-08 E.I. Du Pont De Nemours And Company Electron field emitter and compositions related thereto
US6798127B2 (en) * 2002-10-09 2004-09-28 Nano-Proprietary, Inc. Enhanced field emission from carbon nanotubes mixed with particles

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183370A (ja) * 2003-12-16 2005-07-07 Samsung Sdi Co Ltd カーボンナノチューブエミッターの形成方法
JP2005299040A (ja) * 2004-04-14 2005-10-27 Sakai Ovex Co Ltd 膨張化炭素繊維、その製造法およびそれを含む電界放出素子ならびに電界放出ディスプレイ
JP2008147169A (ja) * 2006-12-07 2008-06-26 Korea Electronics Telecommun Ｃｎｔエミッタの製造方法
KR101356632B1 (ko) * 2012-04-12 2014-02-05 한국과학기술원 금속 바인더를 이용한 방전에 강한 고 안정성 탄소나노튜브 전계방출형 전자빔 에미터의 제조방법 및 이를 이용한 탄소나노튜브 전계방출형 전자빔 에미터

Also Published As

Publication number Publication date
EP1497842A1 (en) 2005-01-19
CN1650384A (zh) 2005-08-03
US7750544B2 (en) 2010-07-06
BR0309424A (pt) 2005-02-01
KR20040104597A (ko) 2004-12-10
WO2003092030A1 (en) 2003-11-06
AU2003223732A1 (en) 2003-11-10
US20070170832A1 (en) 2007-07-26
US7317277B2 (en) 2008-01-08
US20040017141A1 (en) 2004-01-29

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