JP2005509271A5 - - Google Patents

Download PDF

Info

Publication number
JP2005509271A5
JP2005509271A5 JP2002578588A JP2002578588A JP2005509271A5 JP 2005509271 A5 JP2005509271 A5 JP 2005509271A5 JP 2002578588 A JP2002578588 A JP 2002578588A JP 2002578588 A JP2002578588 A JP 2002578588A JP 2005509271 A5 JP2005509271 A5 JP 2005509271A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002578588A
Other versions
JP2005509271A (ja
Filing date
Publication date
Priority claimed from US09/823,195 external-priority patent/US7714438B2/en
Application filed filed Critical
Publication of JP2005509271A publication Critical patent/JP2005509271A/ja
Publication of JP2005509271A5 publication Critical patent/JP2005509271A5/ja
Pending legal-status Critical Current

Links

JP2002578588A 2001-03-29 2002-03-28 電子スイッチング、ゲート及び記憶装置用途のための、電界によってバンドギャップ変化が促進される双安定分子メカニカルデバイス Pending JP2005509271A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/823,195 US7714438B2 (en) 2000-12-14 2001-03-29 Bistable molecular mechanical devices with a band gap change activated by an electrical field for electronic switching, gating, and memory applications
PCT/US2002/010147 WO2002080290A2 (en) 2001-03-29 2002-03-28 Bistable molecularr mechanical devices with a band gap change activated by an electric field for electronic switching, gating and memory applications.

Publications (2)

Publication Number Publication Date
JP2005509271A JP2005509271A (ja) 2005-04-07
JP2005509271A5 true JP2005509271A5 (ja) 2005-12-22

Family

ID=25238062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002578588A Pending JP2005509271A (ja) 2001-03-29 2002-03-28 電子スイッチング、ゲート及び記憶装置用途のための、電界によってバンドギャップ変化が促進される双安定分子メカニカルデバイス

Country Status (5)

Country Link
US (1) US7714438B2 (ja)
EP (1) EP1374322A2 (ja)
JP (1) JP2005509271A (ja)
KR (1) KR100910276B1 (ja)
WO (1) WO2002080290A2 (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6995312B2 (en) * 2001-03-29 2006-02-07 Hewlett-Packard Development Company, L.P. Bistable molecular switches and associated methods
US7175961B2 (en) * 2001-10-24 2007-02-13 Hewlett-Packard Development Company, L.P. Photopatternable molecular circuitry
DE60212118T2 (de) * 2002-08-08 2007-01-04 Sony Deutschland Gmbh Verfahren zur Herstellung einer Kreuzschienenstruktur von Nanodrähten
US7113165B2 (en) 2002-10-25 2006-09-26 Hewlett-Packard Development Company, L.P. Molecular light valve display having sequenced color illumination
KR20050086693A (ko) * 2002-11-18 2005-08-30 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 물질로부터 나노와이어를 제조하는 방법과나노와이어 분산 및 전자 장치
US7494596B2 (en) * 2003-03-21 2009-02-24 Hewlett-Packard Development Company, L.P. Measurement of etching
US6947311B2 (en) * 2003-06-10 2005-09-20 University Of Basel Two-dimensional structural transition controlled by an electric field, memory storage device thereof, and method of making a memory storage device
US6812117B1 (en) * 2003-06-30 2004-11-02 The United States Of America As Represented By The Secretary Of The Air Force Method for creating a reconfigurable nanometer-scale electronic network
US7782408B2 (en) * 2003-07-07 2010-08-24 Hewlett-Packard Development Company, L.P. 3-D molecular assembly and its applications for molecular display and moletronics
US7291514B2 (en) * 2004-03-02 2007-11-06 Hewlett-Packard Development Company, L.P. Bottom electrode chemically-bonded Langmuir-Blodgett films via photolabile groups
US20050274609A1 (en) * 2004-05-18 2005-12-15 Yong Chen Composition of matter which results in electronic switching through intra- or inter- molecular charge transfer, or charge transfer between molecules and electrodes induced by an electrical field
US7709290B2 (en) * 2004-06-30 2010-05-04 Hewlett-Packard Development Company, L.P. Method of forming a self-assembled molecular layer
US7297557B2 (en) * 2004-06-30 2007-11-20 Hewlett-Packard Development Company, L.P. Method for chemically bonding Langmuir-Blodgett films to substrates
US7255892B2 (en) * 2004-06-30 2007-08-14 Hewlett-Packard Development Company, L.P. Molecular layer and method of forming the same
US20060003594A1 (en) * 2004-06-30 2006-01-05 Zhang Sean X Molecules for langmuir-blodgett deposition of a molecular layer
US7378539B2 (en) 2004-09-22 2008-05-27 Hewlett-Packard Development Company, L.P. Compound, a molecular switch employing the compound and a method of electronic switching
US20060108322A1 (en) * 2004-11-19 2006-05-25 Wei Wu Lift-off material
US7309875B2 (en) 2004-11-22 2007-12-18 Hewlett-Packard Development Company, L.P. Nanocrystal protective layer for crossbar molecular electronic devices
WO2006062143A1 (en) * 2004-12-07 2006-06-15 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US20080138635A1 (en) * 2005-03-02 2008-06-12 Zhikuan Chen Conjugated Organic Molecules for Molecular Electronic Devices
US20070189058A1 (en) * 2006-02-13 2007-08-16 Zhang-Lin Zhou Molecular system and method for reversibly switching the same between four states
US8101942B2 (en) * 2006-09-19 2012-01-24 The United States Of America As Represented By The Secretary Of Commerce Self-assembled monolayer based silver switches
KR102342308B1 (ko) * 2018-10-31 2021-12-22 재단법인대구경북과학기술원 메모리 셀 유닛, 스위칭 저항 메모리 소자 및 이를 포함하는 뇌신경모사 소자
US10832775B1 (en) 2019-07-18 2020-11-10 International Business Machines Corporation Cross-point array of polymer junctions with individually-programmed conductances that can be reset

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1561272A (en) * 1976-04-27 1980-02-20 Ciba Geigy Ag Azomethine compounds their manufacture and use
US5011907A (en) * 1989-10-10 1991-04-30 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Molecules with enhanced electronic polarizabilities based on "defect"-like states in conjugated polymers
US5475341A (en) * 1992-06-01 1995-12-12 Yale University Sub-nanoscale electronic systems and devices
JP2728123B2 (ja) 1995-07-24 1998-03-18 日本電気株式会社 スイッチング素子およびその製造方法
JP3525934B2 (ja) 1997-02-06 2004-05-10 インターナショナル・ビジネス・マシーンズ・コーポレーション 層状媒体及び発光ダイオード
US6774222B1 (en) * 1998-02-20 2004-08-10 The United States Of America As Represented By The Department Of Health And Human Services Molecular computing elements, gates and flip-flops
US6262795B1 (en) * 1998-08-28 2001-07-17 Philip Semiconductors, Inc. Apparatus and method for the improvement of illumination uniformity in photolithographic systems
US6348700B1 (en) * 1998-10-27 2002-02-19 The Mitre Corporation Monomolecular rectifying wire and logic based thereupon
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6198655B1 (en) * 1999-12-10 2001-03-06 The Regents Of The University Of California Electrically addressable volatile non-volatile molecular-based switching devices
US20020110831A1 (en) * 1999-12-10 2002-08-15 Schlag Edward William Method and apparatus for controlling an electric current through bio-molecules
WO2001057140A1 (en) * 2000-02-04 2001-08-09 Massachusetts Institute Of Technology Insulated nanoscopic pathways, compositions and devices of the same
US6628016B2 (en) * 2000-03-20 2003-09-30 California Molecular Electronics Corporation Molecular dipolar rotors
US6674932B1 (en) 2000-12-14 2004-01-06 Hewlett-Packard Development Company, L.P. Bistable molecular mechanical devices with a middle rotating segment activated by an electric field for electronic switching, gating, and memory applications
US6805817B2 (en) 2000-12-14 2004-10-19 Hewlett-Packard Development Company, L.P. Molecular devices activated by an electric field for electronic ink and other visual display
US7112366B2 (en) * 2001-01-05 2006-09-26 The Ohio State University Chemical monolayer and micro-electronic junctions and devices containing same
US7248446B2 (en) * 2001-11-27 2007-07-24 Seagate Technology Llc Magnetoresistive element using an organic nonmagnetic layer

Similar Documents

Publication Publication Date Title
BE2019C547I2 (ja)
BE2019C510I2 (ja)
BE2018C021I2 (ja)
BE2017C049I2 (ja)
BE2017C005I2 (ja)
BE2016C069I2 (ja)
BE2016C040I2 (ja)
BE2016C013I2 (ja)
BE2018C018I2 (ja)
BE2016C002I2 (ja)
BE2015C017I2 (ja)
BE2014C053I2 (ja)
BE2014C051I2 (ja)
BE2014C041I2 (ja)
BE2014C030I2 (ja)
BE2014C016I2 (ja)
BE2014C015I2 (ja)
BE2013C063I2 (ja)
BE2013C039I2 (ja)
JP2003230550A5 (ja)
BRPI0302144B1 (ja)
JP2005509271A5 (ja)
JP2003195845A5 (ja)
BRPI0215435A2 (ja)
BE2013C046I2 (ja)