JP2005509177A - 短波長像形成用フォトレジスト組成物 - Google Patents

短波長像形成用フォトレジスト組成物 Download PDF

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Publication number
JP2005509177A
JP2005509177A JP2002575707A JP2002575707A JP2005509177A JP 2005509177 A JP2005509177 A JP 2005509177A JP 2002575707 A JP2002575707 A JP 2002575707A JP 2002575707 A JP2002575707 A JP 2002575707A JP 2005509177 A JP2005509177 A JP 2005509177A
Authority
JP
Japan
Prior art keywords
photoresist
alkyl
resist
present
compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002575707A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005509177A5 (enExample
Inventor
ザンピーニ，アンソニー
シュマンダ，チャールズ・アール
テイラー，ゲイリー・エヌ
キャメロン，ジェームス・エフ
ポーラーズ，ゲールハルト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of JP2005509177A publication Critical patent/JP2005509177A/ja
Publication of JP2005509177A5 publication Critical patent/JP2005509177A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002575707A 2001-03-22 2002-03-20 短波長像形成用フォトレジスト組成物 Pending JP2005509177A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27817201P 2001-03-22 2001-03-22
PCT/US2002/008760 WO2002077710A2 (en) 2001-03-22 2002-03-20 Photoresist compositions for short wavelength imaging

Publications (2)

Publication Number Publication Date
JP2005509177A true JP2005509177A (ja) 2005-04-07
JP2005509177A5 JP2005509177A5 (enExample) 2005-12-22

Family

ID=23063960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002575707A Pending JP2005509177A (ja) 2001-03-22 2002-03-20 短波長像形成用フォトレジスト組成物

Country Status (4)

Country Link
US (1) US6858379B2 (enExample)
JP (1) JP2005509177A (enExample)
AU (1) AU2002255865A1 (enExample)
WO (1) WO2002077710A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015024978A (ja) * 2013-07-29 2015-02-05 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100672221B1 (ko) * 1999-04-30 2007-01-23 스미또모 가가꾸 가부시키가이샤 네거티브형 내식막 조성물
WO2001098834A1 (en) * 2000-06-21 2001-12-27 Asahi Glass Company, Limited Resist composition
US20030082477A1 (en) * 2001-03-22 2003-05-01 Shipley Company, L.L.C Photoresist composition
KR20040030799A (ko) * 2001-07-12 2004-04-09 가부시끼가이샤 한도따이 센단 테크놀로지스 미세 패턴 형성 방법
JP2003140345A (ja) * 2001-11-02 2003-05-14 Fuji Photo Film Co Ltd ポジ型レジスト組成物
US7335454B2 (en) * 2001-12-13 2008-02-26 Fujifilm Corporation Positive resist composition
US20050227183A1 (en) * 2002-01-11 2005-10-13 Mark Wagner Compositions and methods for image development of conventional chemically amplified photoresists
KR100583096B1 (ko) * 2003-06-27 2006-05-23 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 포함하는 포토레지스트 조성물
KR100673097B1 (ko) 2003-07-29 2007-01-22 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 포함하는 포토레지스트 조성물
US7820369B2 (en) * 2003-12-04 2010-10-26 International Business Machines Corporation Method for patterning a low activation energy photoresist
US20060008730A1 (en) * 2004-07-09 2006-01-12 Puy Michael V D Monomers for photoresists bearing acid-labile groups of reduced optical density
US20060008731A1 (en) * 2004-07-09 2006-01-12 Michael Van Der Puy Novel photoresist monomers and polymers
US20060172223A1 (en) * 2004-11-24 2006-08-03 Rohm And Haas Electronic Materials Llc Photoresist compositions
JP4603586B2 (ja) * 2004-12-22 2010-12-22 テレコム・イタリア・エッセ・ピー・アー インクジェットプリントヘッド用の三次元的構造体及び関連する製造方法
WO2006081534A1 (en) * 2005-01-28 2006-08-03 Micell Technologies, Inc. Compositions and methods for image development of conventional chemically amplified photoresists
US7410751B2 (en) * 2005-01-28 2008-08-12 Micell Technologies, Inc. Compositions and methods for image development of conventional chemically amplified photoresists
JP4861767B2 (ja) 2005-07-26 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP4881686B2 (ja) * 2005-12-09 2012-02-22 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US8541523B2 (en) * 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
WO2017063040A1 (en) * 2015-10-13 2017-04-20 Bilinsky Henry Claudius Microstructure patterns
TWI815097B (zh) * 2020-03-30 2023-09-11 台灣積體電路製造股份有限公司 光阻劑組成物與製造半導體裝置的方法

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US4598367A (en) * 1983-11-09 1986-07-01 Financial Design Systems, Inc. Financial quotation system using synthesized speech
US4736294A (en) * 1985-01-11 1988-04-05 The Royal Bank Of Canada Data processing methods and apparatus for managing vehicle financing
US4774664A (en) * 1985-07-01 1988-09-27 Chrysler First Information Technologies Inc. Financial data processing system and method
US4736320A (en) * 1985-10-08 1988-04-05 Foxboro Company Computer language structure for process control applications, and translator therefor
US5202826A (en) * 1989-01-27 1993-04-13 Mccarthy Patrick D Centralized consumer cash value accumulation system for multiple merchants
US5212789A (en) * 1989-10-12 1993-05-18 Bell Communications Research, Inc. Method and apparatus for updating application databases used in a distributed transaction processing environment
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JP2715881B2 (ja) * 1993-12-28 1998-02-18 日本電気株式会社 感光性樹脂組成物およびパターン形成方法
JP3650985B2 (ja) 1997-05-22 2005-05-25 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物およびパターン製造法
EP1035441A1 (en) 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
KR20020012206A (ko) 1999-05-04 2002-02-15 메리 이. 보울러 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법
US6468712B1 (en) * 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography
US6548219B2 (en) * 2001-01-26 2003-04-15 International Business Machines Corporation Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015024978A (ja) * 2013-07-29 2015-02-05 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法

Also Published As

Publication number Publication date
US6858379B2 (en) 2005-02-22
US20030027077A1 (en) 2003-02-06
AU2002255865A1 (en) 2002-10-08
WO2002077710A2 (en) 2002-10-03
WO2002077710A3 (en) 2003-02-20

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