JP2005502174A - イオン注入器を調整する方法および装置 - Google Patents

イオン注入器を調整する方法および装置 Download PDF

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Publication number
JP2005502174A
JP2005502174A JP2003525879A JP2003525879A JP2005502174A JP 2005502174 A JP2005502174 A JP 2005502174A JP 2003525879 A JP2003525879 A JP 2003525879A JP 2003525879 A JP2003525879 A JP 2003525879A JP 2005502174 A JP2005502174 A JP 2005502174A
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Japan
Prior art keywords
target
beam current
parameter
adjustment
control
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Pending
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JP2003525879A
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English (en)
Japanese (ja)
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JP2005502174A5 (https=
Inventor
サリバン、テレンス・ショーン
ホルブルック、デイビッド・エス
ラーディン、クリフォード・エイ
Original Assignee
バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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Publication of JP2005502174A publication Critical patent/JP2005502174A/ja
Publication of JP2005502174A5 publication Critical patent/JP2005502174A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2003525879A 2001-08-30 2002-07-10 イオン注入器を調整する方法および装置 Pending JP2005502174A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/943,625 US7282721B2 (en) 2001-08-30 2001-08-30 Method and apparatus for tuning ion implanters
PCT/US2002/021751 WO2003021630A1 (en) 2001-08-30 2002-07-10 Method and apparatus for tuning ion implanters

Publications (2)

Publication Number Publication Date
JP2005502174A true JP2005502174A (ja) 2005-01-20
JP2005502174A5 JP2005502174A5 (https=) 2006-01-05

Family

ID=25479965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003525879A Pending JP2005502174A (ja) 2001-08-30 2002-07-10 イオン注入器を調整する方法および装置

Country Status (7)

Country Link
US (1) US7282721B2 (https=)
EP (1) EP1421598A1 (https=)
JP (1) JP2005502174A (https=)
KR (1) KR20040029140A (https=)
CN (1) CN100456416C (https=)
TW (1) TW571351B (https=)
WO (1) WO2003021630A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007538383A (ja) * 2003-11-03 2007-12-27 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド イオン注入プロセスの欠陥検出および制御方法、およびその実行システム
JP2016526254A (ja) * 2013-05-03 2016-09-01 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド イオン注入均一性を制御するための装置及び技術
US10121666B2 (en) 2015-12-10 2018-11-06 Sumitomo Heavy Industries Ion Technology Co., Ltd. Ion implantation method and ion implantation apparatus
US10453689B2 (en) 2016-03-18 2019-10-22 Sumitomo Heavy Industries Ion Technology Co., Ltd. Ion implantation method and ion implantation apparatus

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2409928B (en) * 2004-01-09 2007-03-21 Applied Materials Inc Improvements relating to ion implantation
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US7442944B2 (en) 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
US6992311B1 (en) * 2005-01-18 2006-01-31 Axcelis Technologies, Inc. In-situ cleaning of beam defining apertures in an ion implanter
US7397047B2 (en) * 2005-05-06 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Technique for tuning an ion implanter system
KR100755069B1 (ko) * 2006-04-28 2007-09-06 주식회사 하이닉스반도체 불균일한 이온주입에너지를 갖도록 하는 이온주입장치 및방법
GB2438893B (en) * 2006-06-09 2010-10-27 Applied Materials Inc Ion beams in an ion implanter
US7227160B1 (en) * 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
US20080245957A1 (en) * 2007-04-03 2008-10-09 Atul Gupta Tuning an ion implanter for optimal performance
CN102347193B (zh) * 2010-08-02 2015-09-30 北京中科信电子装备有限公司 一种大角度离子注入机快速调束的优化算法
US9234932B2 (en) * 2013-03-13 2016-01-12 Thermo Finnigan Llc Method and apparatus for monitoring ion lens connections
US9870896B2 (en) * 2013-12-06 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for controlling ion implanter
US9423635B1 (en) * 2014-01-31 2016-08-23 The University Of Toledo Integrated magneto-optic modulator/compensator system, methods of making, and methods of using the same
US10515780B1 (en) * 2018-12-19 2019-12-24 Axcelis Technologies, Inc. System and method of arc detection using dynamic threshold
CN111175569B (zh) * 2020-02-20 2021-11-05 中国科学院上海应用物理研究所 一种基于宽带串行化的极窄束流信号峰值幅度提取方法
JP7548839B2 (ja) * 2021-02-09 2024-09-10 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法
US12340967B2 (en) 2021-07-14 2025-06-24 Applied Materials, Inc. Methods, mediums, and systems for identifying tunable domains for ion beam shape matching
CN113571401B (zh) * 2021-07-19 2024-06-28 粤芯半导体技术股份有限公司 狭缝组件及离子注入机台

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595837A (en) * 1983-09-16 1986-06-17 Rca Corporation Method for preventing arcing in a device during ion-implantation
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
CN1155152A (zh) * 1995-12-11 1997-07-23 株式会社日立制作所 带电粒子束装置及其操作方法
JPH10134745A (ja) 1996-10-29 1998-05-22 Jeol Ltd 電子ビームの電流密度制御方法および装置
US5861632A (en) * 1997-08-05 1999-01-19 Advanced Micro Devices, Inc. Method for monitoring the performance of an ion implanter using reusable wafers
US6137112A (en) 1998-09-10 2000-10-24 Eaton Corporation Time of flight energy measurement apparatus for an ion beam implanter
BE1012358A5 (fr) * 1998-12-21 2000-10-03 Ion Beam Applic Sa Procede de variation de l'energie d'un faisceau de particules extraites d'un accelerateur et dispositif a cet effet.
US7309997B1 (en) 2000-09-15 2007-12-18 Varian Semiconductor Equipment Associates, Inc. Monitor system and method for semiconductor processes
US6774378B1 (en) * 2003-10-08 2004-08-10 Axcelis Technologies, Inc. Method of tuning electrostatic quadrupole electrodes of an ion beam implanter

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007538383A (ja) * 2003-11-03 2007-12-27 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド イオン注入プロセスの欠陥検出および制御方法、およびその実行システム
JP2016526254A (ja) * 2013-05-03 2016-09-01 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド イオン注入均一性を制御するための装置及び技術
JP2016526253A (ja) * 2013-05-03 2016-09-01 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド イオン注入均一性を制御するための装置及び技術
US10121666B2 (en) 2015-12-10 2018-11-06 Sumitomo Heavy Industries Ion Technology Co., Ltd. Ion implantation method and ion implantation apparatus
US10453689B2 (en) 2016-03-18 2019-10-22 Sumitomo Heavy Industries Ion Technology Co., Ltd. Ion implantation method and ion implantation apparatus

Also Published As

Publication number Publication date
WO2003021630A1 (en) 2003-03-13
EP1421598A1 (en) 2004-05-26
TW571351B (en) 2004-01-11
CN100456416C (zh) 2009-01-28
CN1557012A (zh) 2004-12-22
KR20040029140A (ko) 2004-04-03
US7282721B2 (en) 2007-10-16
US20030042427A1 (en) 2003-03-06

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