JP2005340322A - Substrate treatment apparatus and method of manufacturing substrate - Google Patents

Substrate treatment apparatus and method of manufacturing substrate Download PDF

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JP2005340322A
JP2005340322A JP2004154193A JP2004154193A JP2005340322A JP 2005340322 A JP2005340322 A JP 2005340322A JP 2004154193 A JP2004154193 A JP 2004154193A JP 2004154193 A JP2004154193 A JP 2004154193A JP 2005340322 A JP2005340322 A JP 2005340322A
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pipe
processing
substrate
processing liquid
liquid
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Yoshihiro Moriguchi
善弘 森口
Mitsuyuki Otake
潤之 大竹
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Hitachi High Tech Corp
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Hitachi High Tech Electronics Engineering Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To effectively reduce bubbles contained in a treatment liquid using simple equipment. <P>SOLUTION: The treatment liquid stored in a treatment liquid tank 20 is supplied to a treatment chamber 50 via a supply pipe 40 by means of a pump 30. The treatment chamber 50 is located higher than the treatment liquid tank 20, and the treatment liquid accumulated on the floor of the treatment chamber 50 is caused to flow into the treatment liquid tank 20 via a vertical pipe 11 and a horizontal pipe 12 by gravitational force. While the treatment liquid is flowing in the horizontal pipe 12, the bubbles in the treatment liquid are caused to flow into a bypass pipe 13 from a branch point 14 of the horizontal pipe 12. Since the bubbles flowing into the bypass pipe 13 are pushed by bubbles coming into the bypass pipe 13 one after another, they ascend rapidly in a vertical part of the bypass pipe 13. After the highest point of the bypass pipe 13, the bubbles start to descend slowly in a sloped part of the bypass pipe 13. During descending the pipe, the bubbles begin to liquefy and become a liquid by the time they reach the juncture 15 and then are caused to flow into the horizontal pipe 12. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、現像液、エッチング液、剥離液等の処理液を用いて現像、エッチング、剥離等の基板の処理を行う基板処理装置及びそれを用いた基板の製造方法に係り、特に処理液を処理室と処理液タンクとの間で循環させて再使用する基板処理装置及びそれを用いた基板の製造方法に関する。   The present invention relates to a substrate processing apparatus that performs processing of a substrate such as development, etching, and peeling using a processing solution such as a developing solution, an etching solution, and a peeling solution, and a method for manufacturing a substrate using the same, and in particular, a processing solution The present invention relates to a substrate processing apparatus that is circulated between a processing chamber and a processing liquid tank and reused, and a substrate manufacturing method using the same.

例えば、表示用パネルとして用いられる液晶ディスプレイ装置のTFT(Thin Film Transistor)基板やカラーフィルタ基板、プラズマディスプレイパネル用基板、有機EL(Electroluminescence)表示パネル用基板等の製造工程では、基板上に回路パターンやカラーフィルタ等を形成するため、現像液、エッチング液、剥離液等の処理液を用いて、現像、エッチング、剥離等の基板の処理が行われる。一般に、これらの処理を行う工程は、ウエットプロセスと呼ばれている。   For example, in a manufacturing process of a TFT (Thin Film Transistor) substrate, a color filter substrate, a plasma display panel substrate, an organic EL (Electroluminescence) display panel substrate, or the like of a liquid crystal display device used as a display panel, a circuit pattern is formed on the substrate. In order to form a color filter or the like, a substrate such as development, etching, or peeling is performed using a processing liquid such as a developing solution, an etching solution, or a peeling solution. In general, a process for performing these processes is called a wet process.

ウエットプロセスは、処理室内で、ローラコンベア等の移動手段を用いて基板を移動しながら、処理液をスプレー等から基板の表面へ吹き付けて行われることが多い。一般に、処理液は、外部の処理液タンクからポンプによって処理室へ供給され、基板の処理後、処理室から回収されて処理液タンクへ戻される。このように処理液を処理室と処理液タンクとの間で循環させて再使用することにより、高価な処理液の消費量が低減され、基板の製造コストが削減される。   In many cases, the wet process is performed by spraying the processing liquid onto the surface of the substrate from a spray or the like while moving the substrate using a moving means such as a roller conveyor in the processing chamber. In general, the processing liquid is supplied from an external processing liquid tank to the processing chamber by a pump, and after processing the substrate, the processing liquid is recovered from the processing chamber and returned to the processing liquid tank. As described above, the processing liquid is circulated between the processing chamber and the processing liquid tank and reused, thereby reducing the consumption of expensive processing liquid and reducing the manufacturing cost of the substrate.

ウエットプロセスに用いられる処理液には、処理室と処理液タンクとの間をポンプにより循環させる際に泡が発生する。特に現像や剥離に使用されるアルカリ性の処理液や、エッチングに使用される有機酸系の処理液では、細かい泡が大量に発生する。処理液中の泡は、スプレーの吐出不良、処理液タンク又は処理室からの泡漏れ、処理室内での泡による基板の搬送不良等の問題を引き起こす。このため、従来、処理液に消泡剤を添加する、泡が消えるまで装置を停止する、あるいは処理液を交換するという対策が採られていた。しかしながら、消泡剤の添加は処理液の劣化を、装置の停止は稼働率の低下を、処理液の交換はランニングコストの増大を招くという問題があった。   In the processing liquid used in the wet process, bubbles are generated when the pump is circulated between the processing chamber and the processing liquid tank. In particular, an alkaline processing solution used for development and peeling and an organic acid processing solution used for etching generate a large amount of fine bubbles. Bubbles in the processing liquid cause problems such as poor spray discharge, leakage of bubbles from the processing liquid tank or the processing chamber, and poor conveyance of the substrate due to bubbles in the processing chamber. For this reason, conventionally, measures have been taken such as adding an antifoaming agent to the processing liquid, stopping the apparatus until the bubbles disappear, or replacing the processing liquid. However, there has been a problem that the addition of an antifoaming agent causes deterioration of the processing liquid, the stoppage of the apparatus causes a reduction in operating rate, and the replacement of the processing liquid causes an increase in running cost.

これに対し、特許文献1には、消泡タンクを用いて薬液(処理液)の泡を消す技術が記載されている。また、特許文献2には、消泡スプレーを用いて薬液(処理液)の泡を消す技術が記載されている。さらに、特許文献3には、手動バルブやエア抜き配管を用いて、処理液タンク内へ泡が流入するのを防止する技術が記載されている。
特開平8−17787号公報 特開2000−98319号公報 特開2001−332528号公報
On the other hand, Patent Document 1 describes a technique for eliminating bubbles of a chemical solution (processing solution) using an antifoaming tank. Patent Document 2 describes a technique for eliminating bubbles of a chemical solution (processing solution) using an antifoaming spray. Furthermore, Patent Document 3 describes a technique for preventing bubbles from flowing into the processing liquid tank using a manual valve or an air vent pipe.
JP-A-8-17787 JP 2000-98319 A JP 2001-332528 A

特許文献1又は特許文献2に記載の技術は、消泡タンク又は消泡スプレーという特別な設備が必要であった。一方、特許文献3に記載の技術は、手動バルブやエア抜き配管といった簡単な設備で済む反面、特許文献1及び特許文献2の様に泡を積極的に除去することができない。このため、依然として泡が処理室内に残り、処理室からの泡漏れ、及び処理室内での泡による基板の搬送不良の問題があった。   The technology described in Patent Document 1 or Patent Document 2 requires special equipment such as an antifoaming tank or an antifoaming spray. On the other hand, the technique described in Patent Document 3 requires simple equipment such as a manual valve and air vent piping, but cannot remove bubbles as in Patent Document 1 and Patent Document 2. For this reason, bubbles still remain in the processing chamber, and there are problems of bubble leakage from the processing chamber and poor substrate transport due to bubbles in the processing chamber.

本発明の課題は、簡単な設備を用いて効果的に処理液中の泡を少なくすることである。   An object of the present invention is to effectively reduce bubbles in the processing liquid using simple equipment.

また、本発明の課題は、処理むらが少なく品質の高い基板を、効率良く安価に製造することである。   Another object of the present invention is to efficiently and inexpensively manufacture a high-quality substrate with little processing unevenness.

本発明の基板処理装置は、処理液を貯留する処理液タンクと、処理液を用いて基板の処理を行う処理室と、処理液を処理液タンクから処理室へ供給する供給用配管と、供給用配管に設けられたポンプと、処理液を処理室から処理液タンクへ回収する回収用配管とを備えた基板処理装置であって、処理室は処理液タンクより高い位置に設けられ、回収用配管は、処理室から下方へ向かう縦配管と、縦配管に続くほぼ水平の横配管と、横配管から分岐して上方へ向かい、途中から下方へ向かって横配管に合流するバイパス配管とを有するものである。   The substrate processing apparatus of the present invention includes a processing liquid tank for storing a processing liquid, a processing chamber for processing a substrate using the processing liquid, a supply pipe for supplying the processing liquid from the processing liquid tank to the processing chamber, and a supply A substrate processing apparatus having a pump provided in a pipe for recovery and a recovery pipe for recovering the processing liquid from the processing chamber to the processing liquid tank, wherein the processing chamber is provided at a position higher than the processing liquid tank. The piping has a vertical piping that goes downward from the processing chamber, a substantially horizontal horizontal piping that follows the vertical piping, and a bypass piping that branches from the horizontal piping and goes upward, and merges with the horizontal piping downward from the middle. Is.

処理室の床面に溜まった処理液は、重力落下により、縦配管及び横配管を通って処理液タンクへ流れ込む。処理液中の泡は、空気が内包されていて軽いため、処理液が横配管内を流れる際、横配管からバイパス配管へ流れ込む。バイパス配管に流れ込んだ泡は、後から後から流れ込む泡に押されて、バイパス配管の上方へ向かう部分を早い速度で上昇する。バイパス配管の最上部を過ぎると、泡はバイパス配管の下方へ向かう部分をゆっくりした速度で下降し始める。下降の際、泡は液化し始め、横配管に合流するまでに液体となって、横配管へ流れ込む。   The processing liquid collected on the floor of the processing chamber flows into the processing liquid tank through the vertical piping and the horizontal piping due to gravity drop. Since bubbles in the processing liquid contain light and are light, when the processing liquid flows in the horizontal pipe, it flows into the bypass pipe from the horizontal pipe. The foam that has flowed into the bypass pipe is pushed by the foam that flows into the bypass pipe later, and rises at a high speed in a portion directed upward of the bypass pipe. After passing the uppermost part of the bypass pipe, the bubbles begin to descend at a slow speed in the downward direction of the bypass pipe. When descending, the bubbles start to liquefy and become liquid before joining the horizontal pipe and flow into the horizontal pipe.

さらに、本発明の基板処理装置は、バイパス配管の最上部の高さを、縦配管内の処理液の液面の高さより高くしたものである。もし、縦配管内の処理液の液面の高さがバイパス配管の最上部の高さより高いと、処理液中の泡が縦配管から横配管へ流れ込みにくくなる。一方、縦配管内の処理液の液面の高さが横配管の位置より高くないと、横配管内が処理液で満たされず、横配管からバイパス配管へ泡が流れ込まなくなる。バイパス配管の最上部の高さを縦配管内の処理液の液面の高さより高くすることにより、処理液の液面の高さがバイパス配管の最上部の高さと横配管の位置との中間となり、バイパス配管へ泡が流れ込みやすくなる。   Furthermore, in the substrate processing apparatus of the present invention, the height of the uppermost part of the bypass pipe is higher than the height of the liquid level of the processing liquid in the vertical pipe. If the liquid level of the processing liquid in the vertical pipe is higher than the height of the uppermost part of the bypass pipe, bubbles in the processing liquid do not easily flow from the vertical pipe to the horizontal pipe. On the other hand, if the level of the processing liquid in the vertical pipe is not higher than the position of the horizontal pipe, the horizontal pipe is not filled with the processing liquid, and bubbles do not flow from the horizontal pipe into the bypass pipe. By making the height of the uppermost part of the bypass pipe higher than the liquid level of the treatment liquid in the vertical pipe, the liquid level of the treatment liquid is intermediate between the height of the uppermost part of the bypass pipe and the position of the horizontal pipe. Thus, bubbles easily flow into the bypass pipe.

さらに、本発明の基板処理装置は、横配管に流量調節手段を設けたものである。流量調節手段を用い、バイパス配管へ泡が流れ込みやすくなる様に、横配管内を流れる処理液の速度を調節することができる。流量調節手段は、バルブでもよく、また横配管自体の太さを部分的に変えたものでもよい。   Furthermore, the substrate processing apparatus of the present invention is provided with a flow rate adjusting means in a horizontal pipe. The flow rate adjusting means can be used to adjust the speed of the processing liquid flowing in the horizontal pipe so that bubbles can easily flow into the bypass pipe. The flow rate adjusting means may be a valve or may be a partial change in the thickness of the horizontal pipe itself.

さらに、本発明の基板処理装置は、バイパス配管に流量調節手段を設けたものである。流量調節手段を用い、泡が液化しやすくなる様に、泡の下降速度を調節することができる。流量調節手段は、バルブでもよく、またバイパス配管自体の太さを部分的に変えたものでもよい。   Furthermore, the substrate processing apparatus of the present invention is provided with a flow rate adjusting means in a bypass pipe. Using the flow rate adjusting means, the bubble lowering speed can be adjusted so that the bubbles are easily liquefied. The flow rate adjusting means may be a valve, or may be a partial change in the thickness of the bypass pipe itself.

さらに、本発明の基板処理装置は、回収用配管の出口を、処理液タンク内の処理液の液面より低い位置に設けたものである。これにより、処理液が回収用配管の出口から処理液タンク内へ落下して泡が発生するのを防止することができる。   In the substrate processing apparatus of the present invention, the outlet of the recovery pipe is provided at a position lower than the liquid level of the processing liquid in the processing liquid tank. Thereby, it can prevent that a process liquid falls into the process liquid tank from the exit of piping for collection | recovery, and a bubble generate | occur | produces.

さらに、本発明の基板処理装置は、処理液タンクが、回収用配管により回収された処理液を一旦溜め、あふれ出る処理液が緩斜面を伝って流れる隔壁を有するものである。回収された処理液中に泡が残っていても、あふれ出る処理液が緩斜面を伝って流れる際に、処理液中の泡が液化してさらに少なくなる。   Further, in the substrate processing apparatus of the present invention, the processing liquid tank temporarily has the processing liquid recovered by the recovery pipe, and has a partition wall where the overflowing processing liquid flows along a gentle slope. Even if bubbles remain in the collected processing liquid, when the overflowing processing liquid flows along the gentle slope, the bubbles in the processing liquid are liquefied and further reduced.

さらに、本発明の基板処理装置は、処理液タンクが、処理液タンク内に溜まった処理液内部の泡を供給用配管の入口から遮断する遮断板を有するものである。処理液タンク内に溜まった処理液の内部に液面へ浮上しない細かい泡が残っていても、遮断板により遮断されて供給用配管の入口へ到達しない。   Furthermore, in the substrate processing apparatus of the present invention, the processing liquid tank has a blocking plate that blocks bubbles in the processing liquid accumulated in the processing liquid tank from the inlet of the supply pipe. Even if fine bubbles that do not float to the liquid level remain in the processing liquid accumulated in the processing liquid tank, they are blocked by the blocking plate and do not reach the inlet of the supply pipe.

本発明の基板の製造方法は、上記のいずれかの基板処理装置を用いて、ウエットプロセスを行うものである。   The substrate manufacturing method of the present invention performs a wet process using any one of the above-described substrate processing apparatuses.

本発明の基板処理装置によれば、バイパス配管を用いて処理液中の泡を液化することにより、簡単な設備を用いて効果的に処理液中の泡を少なくすることができる。従って、スプレーの吐出不良、処理液タンク又は処理室からの泡漏れ、及び処理室内での泡による基板の搬送不良を防止することができる。   According to the substrate processing apparatus of the present invention, bubbles in the processing liquid can be effectively reduced using simple equipment by liquefying the bubbles in the processing liquid using the bypass pipe. Accordingly, it is possible to prevent spray discharge defects, bubble leakage from the processing liquid tank or the processing chamber, and substrate conveyance defects due to bubbles in the processing chamber.

本発明の基板の製造方法によれば、消泡剤の添加による処理液の劣化、装置の停止による稼働率の低下、及び処理液の交換によるランニングコストの増大を抑制して、処理むらが少なく品質の高い基板を、効率良く安価に製造することができる。   According to the substrate manufacturing method of the present invention, the processing liquid is less deteriorated by suppressing the deterioration of the processing liquid due to the addition of the antifoaming agent, the reduction in the operating rate due to the stoppage of the apparatus, and the increase in running cost due to the replacement of the processing liquid. A high-quality substrate can be manufactured efficiently and inexpensively.

図1は、本発明の一実施の形態による基板処理装置の概略構成を示す図である。基板処理装置は、回収用配管10、処理液タンク20、ポンプ30、供給用配管40、及び処理室50を含んで構成されている。   FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus includes a recovery pipe 10, a processing liquid tank 20, a pump 30, a supply pipe 40, and a processing chamber 50.

処理液タンク20に貯留された処理液が、ポンプ30により、供給用配管40を介して処理室50へ供給される。処理室50は、図示しない移動手段を用いて基板1を移動しながら、処理液をスプレー51から基板1の表面へ吹き付けて、基板1の処理を行う。基板1の表面へ吹き付けられた処理液は、基板1の表面から流れ落ちて、処理室50の床面に溜まる。処理室50は、処理液タンク20より高い位置に設けられており、処理室50の床面に溜まった処理液は、回収用配管10を介して処理液タンク20へ回収される。   The processing liquid stored in the processing liquid tank 20 is supplied to the processing chamber 50 by the pump 30 via the supply pipe 40. The processing chamber 50 processes the substrate 1 by spraying a processing liquid onto the surface of the substrate 1 from the spray 51 while moving the substrate 1 using a moving means (not shown). The processing liquid sprayed on the surface of the substrate 1 flows down from the surface of the substrate 1 and accumulates on the floor surface of the processing chamber 50. The processing chamber 50 is provided at a position higher than the processing liquid tank 20, and the processing liquid collected on the floor surface of the processing chamber 50 is recovered to the processing liquid tank 20 via the recovery pipe 10.

回収用配管10は、縦配管11と、横配管12と、バイパス配管13とを含んで構成されている。縦配管11は、処理室50の床面に接続され、処理室50から下方へ向かって延びている。一方、横配管12は、縦配管11に続いて、水平に、あるいは多少の傾斜を持って設けられている。そして、横配管12には、バイパス配管13が接続されている。バイパス配管13は、横配管12の分岐点14から一旦上方へ向かい、途中から下方へ向かって合流点15で横配管12に合流する。   The recovery pipe 10 includes a vertical pipe 11, a horizontal pipe 12, and a bypass pipe 13. The vertical pipe 11 is connected to the floor surface of the processing chamber 50 and extends downward from the processing chamber 50. On the other hand, the horizontal pipe 12 is provided horizontally or with a slight inclination following the vertical pipe 11. A bypass pipe 13 is connected to the horizontal pipe 12. The bypass pipe 13 once goes upward from the branch point 14 of the horizontal pipe 12 and then joins the horizontal pipe 12 at the junction 15 from the middle to the lower side.

なお、図では縦配管11を垂直に示してあるが、縦配管11は必ずしも垂直である必要はなく、垂直に対し所定の角度を持って下方へ向かっていてもよい。同様に、バイパス配管13の横配管12から分岐して上方へ向かう部分は、必ずしも垂直である必要はなく、垂直に対し所定の角度を持って上方へ向かっていてもよい。   Although the vertical pipe 11 is shown as being vertical in the figure, the vertical pipe 11 is not necessarily vertical, and may be directed downward with a predetermined angle with respect to the vertical. Similarly, the portion of the bypass pipe 13 that branches off from the horizontal pipe 12 and goes upward is not necessarily vertical, and may be upward with a predetermined angle with respect to the vertical.

処理室50の床面に溜まった処理液は、重力落下により、縦配管11及び横配管12を通って処理液タンク20へ流れ込む。処理液中の泡は、空気が内包されていて軽いため、処理液が横配管12内を流れる際、横配管12の分岐点14からバイパス配管13へ流れ込む。バイパス配管13に流れ込んだ泡は、後から後から流れ込む泡に押されて、バイパス配管13の上方へ向かう部分を早い速度で上昇する。バイパス配管13の最上部を過ぎると、泡はバイパス配管13の下方へ向かう部分をゆっくりした速度で下降し始める。下降の際、泡は液化し始め、合流点15へ到達するまでに液体となって、合流点15から横配管12へ流れ込む。   The processing liquid collected on the floor surface of the processing chamber 50 flows into the processing liquid tank 20 through the vertical pipe 11 and the horizontal pipe 12 due to gravity drop. Since the bubbles in the processing liquid contain light and are light, when the processing liquid flows in the horizontal pipe 12, it flows into the bypass pipe 13 from the branch point 14 of the horizontal pipe 12. The foam that has flowed into the bypass pipe 13 is pushed by the foam that flows into the bypass pipe 13 later, and rises at a high speed in the portion of the bypass pipe 13 that goes upward. When the uppermost part of the bypass pipe 13 is passed, the bubbles begin to descend at a slow speed in the downward direction of the bypass pipe 13. When descending, the bubbles start to liquefy and become liquid before reaching the junction 15 and flow into the horizontal pipe 12 from the junction 15.

なお、縦配管11内の処理液の液面の高さをA、横配管12の位置をB、バイパス配管13の最上部の高さをCとしたとき、本実施の形態では、バイパス配管13の最上部の高さCを、縦配管11内の処理液の液面の高さAより高くする。もし、縦配管11内の処理液の液面の高さAがバイパス配管13の最上部の高さCより高いと、処理液中の泡が縦配管11から横配管12へ流れ込みにくくなる。一方、縦配管11内の処理液の液面の高さAが横配管の位置Bより高くないと、横配管12内が処理液で満たされず、横配管12からバイパス配管13へ泡が流れ込まなくなる。本実施の形態では、バイパス配管13の最上部の高さCを縦配管11内の処理液の液面の高さAより高くすることにより、処理液の液面の高さAがバイパス配管の最上部の高さCと横配管の位置Bとの中間となり(C>A>B)、バイパス配管13へ泡が流れ込みやすくなる。   In this embodiment, when the height of the liquid surface of the processing liquid in the vertical pipe 11 is A, the position of the horizontal pipe 12 is B, and the height of the uppermost portion of the bypass pipe 13 is C, in the present embodiment, the bypass pipe 13 is used. Is made higher than the height A of the liquid level of the processing liquid in the vertical pipe 11. If the height A of the liquid level of the processing liquid in the vertical pipe 11 is higher than the height C of the uppermost part of the bypass pipe 13, bubbles in the processing liquid will not easily flow from the vertical pipe 11 into the horizontal pipe 12. On the other hand, if the height A of the liquid level of the processing liquid in the vertical pipe 11 is not higher than the position B of the horizontal pipe, the horizontal pipe 12 is not filled with the processing liquid, and bubbles do not flow from the horizontal pipe 12 into the bypass pipe 13. . In the present embodiment, the height A of the uppermost portion of the bypass pipe 13 is made higher than the height A of the liquid level of the processing liquid in the vertical pipe 11 so that the liquid surface height A of the processing liquid is equal to that of the bypass pipe. It becomes an intermediate between the height C of the uppermost part and the position B of the horizontal pipe (C> A> B), and the bubbles easily flow into the bypass pipe 13.

図2は、本発明の他の実施の形態による基板処理装置の概略構成を示す図である。本実施の形態は、横配管12に流量調節手段としてバルブ16を設け、バイパス配管13の下方へ向かう部分に流量調節手段としてバルブ17を設けたものである。その他の構成要素は、図1に示した実施の形態と同様である。   FIG. 2 is a diagram showing a schematic configuration of a substrate processing apparatus according to another embodiment of the present invention. In the present embodiment, a valve 16 is provided as a flow rate adjusting means in the horizontal pipe 12, and a valve 17 is provided as a flow rate adjusting means in a portion going downward of the bypass pipe 13. Other components are the same as those of the embodiment shown in FIG.

本実施の形態では、バルブ16を用い、横配管12内を流れる処理液の流量を調節する。これにより、バイパス配管13へ泡が流れ込みやすくなる様に、横配管12内を流れる処理液の速度を調節することができる。なお、流量を調節する手段は、バルブに限らず、横配管12自体の太さを部分的に変えてもよい。   In the present embodiment, the valve 16 is used to adjust the flow rate of the processing liquid flowing in the horizontal pipe 12. Thereby, the speed of the processing liquid flowing in the horizontal pipe 12 can be adjusted so that bubbles easily flow into the bypass pipe 13. The means for adjusting the flow rate is not limited to the valve, and the thickness of the horizontal pipe 12 itself may be partially changed.

また、バルブ17を用い、バイパス配管13内を流れる泡の流量を調節する。これにより、泡が液化しやすくなる様に、泡の下降速度を調節することができる。なお、流量を調節する手段は、バルブに限らず、バイパス配管13自体の太さを部分的に変えてもよい。   Further, the flow rate of bubbles flowing through the bypass pipe 13 is adjusted using the valve 17. Thereby, the descent | fall speed | rate of a bubble can be adjusted so that a bubble may become easy to liquefy. The means for adjusting the flow rate is not limited to the valve, and the thickness of the bypass pipe 13 itself may be partially changed.

図3は、本発明の一実施の形態による処理液タンクの断面図である。処理液タンク20の内部は、隔壁21により2つの区画20a,20bに分けられている。回収された処理液は、回収用配管の出口18から処理液タンク20内へ流れ込んで、区画20aに一旦溜まる。回収用配管の出口18は、区画20aに溜まった処理液2aの液面より低い位置に設けられている。これにより、処理液が回収用配管の出口18から処理液タンク20内へ落下して泡が発生するのを防止することができる。   FIG. 3 is a cross-sectional view of a processing liquid tank according to an embodiment of the present invention. The inside of the processing liquid tank 20 is divided into two sections 20 a and 20 b by a partition wall 21. The recovered processing liquid flows into the processing liquid tank 20 from the outlet 18 of the recovery pipe and temporarily accumulates in the compartment 20a. The outlet 18 of the recovery pipe is provided at a position lower than the liquid level of the processing liquid 2a accumulated in the section 20a. Thereby, it can prevent that a process liquid falls into the process liquid tank 20 from the exit 18 of collection | recovery piping, and a bubble generate | occur | produces.

隔壁21の上面は、区画20a側を区画20b側より少し高くした緩斜面となっている。区画20aに溜まった処理液2aは、区画20aからあふれ出て隔壁21の緩斜面を伝い、区画20bへ流れ込む。回収された処理液2a中に泡が残っていても、区画20aからあふれ出る処理液2aが隔壁21の緩斜面を伝って流れる際に、処理液2a中の泡が液化してさらに少なくなる。   The upper surface of the partition wall 21 is a gentle slope with the section 20a side slightly higher than the section 20b side. The treatment liquid 2a accumulated in the section 20a overflows from the section 20a, travels along the gentle slope of the partition wall 21, and flows into the section 20b. Even if bubbles remain in the collected processing liquid 2a, when the processing liquid 2a overflowing from the section 20a flows along the gentle slope of the partition wall 21, the bubbles in the processing liquid 2a are liquefied and further reduced.

区画20bには、供給用配管の入口41が接続され、供給用配管の入口41の手前には遮断板22が設けられている。遮断板22は、区画20bに溜まった処理液2bの液面より低くなっており、処理液2bは遮断板22の上方を通って供給用配管の入口41へ達する。このため、処理液2bの内部に液面へ浮上しない細かい泡が残っていても、遮断板22により遮断されて供給用配管の入口41へ到達しない。   A supply pipe inlet 41 is connected to the section 20b, and a blocking plate 22 is provided in front of the supply pipe inlet 41. The blocking plate 22 is lower than the liquid level of the processing liquid 2b accumulated in the section 20b, and the processing liquid 2b passes above the blocking plate 22 and reaches the inlet 41 of the supply pipe. For this reason, even if fine bubbles that do not float to the liquid level remain in the processing liquid 2b, they are blocked by the blocking plate 22 and do not reach the inlet 41 of the supply pipe.

以上説明した実施の形態によれば、バイパス配管13を用いて処理液中の泡を液化することにより、簡単な設備を用いて効果的に処理液中の泡を少なくすることができる。従って、スプレー51の吐出不良、処理液タンク20又は処理室50からの泡漏れ、及び処理室50内での泡による基板の搬送不良を防止することができる。   According to the embodiment described above, the bubbles in the processing liquid can be effectively reduced using simple equipment by liquefying the bubbles in the processing liquid using the bypass pipe 13. Therefore, defective discharge of the spray 51, bubble leakage from the processing liquid tank 20 or the processing chamber 50, and substrate conveyance failure due to bubbles in the processing chamber 50 can be prevented.

本発明を用いてウエットプロセスを行うことにより、消泡剤の添加による処理液の劣化、装置の停止による稼働率の低下、及び処理液の交換によるランニングコストの増大を抑制して、処理むらが少なく品質の高い基板を、効率良く安価に製造することができる。     By performing a wet process using the present invention, the processing liquid is prevented from deteriorating due to the addition of the antifoaming agent, the operating rate is reduced due to the stoppage of the apparatus, and the running cost is increased due to the replacement of the processing liquid. A small number of high-quality substrates can be manufactured efficiently and inexpensively.

本発明は、表示用パネルの基板に限らず、泡の発生が問題となる処理液を用いた各種の基板の処理に適用される。   The present invention is not limited to a substrate for a display panel, and is applied to various types of substrate processing using a processing solution in which generation of bubbles is a problem.

本発明の一実施の形態による基板処理装置の概略構成を示す図である。It is a figure which shows schematic structure of the substrate processing apparatus by one embodiment of this invention. 本発明の他の実施の形態による基板処理装置の概略構成を示す図である。It is a figure which shows schematic structure of the substrate processing apparatus by other embodiment of this invention. 本発明の一実施の形態による処理液タンクの断面図である。It is sectional drawing of the process liquid tank by one embodiment of this invention.

符号の説明Explanation of symbols

1 基板
2a,2b 処理液
10 回収用配管
11 縦配管
12 横配管
13 バイパス配管
14 分岐点
15 合流点
16,17 バルブ
18 回収用配管の出口
20 処理液タンク
21 隔壁
22 遮断板
30 ポンプ
40 供給用配管
41 供給用配管の入口
50 処理室
51 スプレー
1 Substrate 2a, 2b Treatment liquid 10 Recovery pipe 11 Vertical pipe 12 Horizontal pipe 13 Bypass pipe 14 Branch point 15 Junction point 16, 17 Valve 18 Recovery pipe outlet 20 Treatment liquid tank 21 Bulkhead 22 Shut-off plate 30 Pump 40 Supply Piping 41 Supply piping inlet 50 Processing chamber 51 Spray

Claims (8)

処理液を貯留する処理液タンクと、
処理液を用いて基板の処理を行う処理室と、
処理液を前記処理液タンクから前記処理室へ供給する供給用配管と、
前記供給用配管に設けられたポンプと、
処理液を前記処理室から前記処理液タンクへ回収する回収用配管とを備えた基板処理装置であって、
前記処理室は前記処理液タンクより高い位置に設けられ、
前記回収用配管は、前記処理室から下方へ向かう縦配管と、該縦配管に続くほぼ水平の横配管と、該横配管から分岐して上方へ向かい、途中から下方へ向かって該横配管に合流するバイパス配管とを有することを特徴とする基板処理装置。
A processing liquid tank for storing the processing liquid;
A processing chamber for processing a substrate using a processing liquid;
A supply pipe for supplying a processing liquid from the processing liquid tank to the processing chamber;
A pump provided in the supply pipe;
A substrate processing apparatus comprising a recovery pipe for recovering a processing liquid from the processing chamber to the processing liquid tank,
The processing chamber is provided at a position higher than the processing liquid tank,
The recovery pipe includes a vertical pipe that extends downward from the processing chamber, a substantially horizontal horizontal pipe that follows the vertical pipe, a branch from the horizontal pipe, and the upward direction. A substrate processing apparatus comprising a bypass pipe that merges.
前記バイパス配管の最上部の高さを,前記縦配管内の処理液の液面の高さより高くしたことを特徴とする請求項1に記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein a height of an uppermost portion of the bypass pipe is higher than a height of a liquid surface of the processing liquid in the vertical pipe. 前記横配管に流量調節手段を設けたことを特徴とする請求項1又は請求項2に記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein a flow rate adjusting unit is provided in the horizontal pipe. 前記バイパス配管に流量調節手段を設けたことを特徴とする請求項1乃至請求項3のいずれか1項に記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein a flow rate adjusting unit is provided in the bypass pipe. 前記回収用配管の出口を、前記処理液タンク内の処理液の液面より低い位置に設けたことを特徴とする請求項1乃至請求項4のいずれか1項に記載の基板処理装置。   5. The substrate processing apparatus according to claim 1, wherein an outlet of the recovery pipe is provided at a position lower than a liquid level of the processing liquid in the processing liquid tank. 前記処理液タンクは、前記回収用配管により回収された処理液を一旦溜め、あふれ出る処理液が緩斜面を伝って流れる隔壁を有することを特徴とする請求項1乃至請求項5のいずれか1項に記載の基板処理装置。   6. The process liquid tank according to claim 1, wherein the process liquid tank temporarily stores the process liquid recovered by the recovery pipe, and has a partition wall where the overflow process liquid flows along a gentle slope. The substrate processing apparatus according to item. 前記処理液タンクは、処理液タンク内に溜まった処理液内部の泡を供給用配管の入口から遮断する遮断板を有することを特徴とする請求項1乃至請求項6のいずれか1項に記載の基板処理装置。   The said process liquid tank has a shielding board which interrupts | blocks the bubble inside the process liquid collected in the process liquid tank from the inlet_port | entrance of supply piping. Substrate processing equipment. 請求項1乃至請求項7のいずれか1項に記載の基板処理装置を用いて、ウエットプロセスを行うことを特徴とする基板の製造方法。   A method for manufacturing a substrate, comprising performing a wet process using the substrate processing apparatus according to claim 1.
JP2004154193A 2004-05-25 2004-05-25 Substrate treatment apparatus and method of manufacturing substrate Pending JP2005340322A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053689A (en) * 2006-07-26 2008-03-06 Shibaura Mechatronics Corp Apparatus of processing substrate
CN107045269A (en) * 2017-03-15 2017-08-15 惠科股份有限公司 Development row's bulb apparatus and developing machine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053689A (en) * 2006-07-26 2008-03-06 Shibaura Mechatronics Corp Apparatus of processing substrate
CN107045269A (en) * 2017-03-15 2017-08-15 惠科股份有限公司 Development row's bulb apparatus and developing machine

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