JP2005333093A - 半導体抵抗素子及びその製造方法並びに半導体抵抗素子を用いた半導体装置 - Google Patents

半導体抵抗素子及びその製造方法並びに半導体抵抗素子を用いた半導体装置 Download PDF

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Publication number
JP2005333093A
JP2005333093A JP2004152607A JP2004152607A JP2005333093A JP 2005333093 A JP2005333093 A JP 2005333093A JP 2004152607 A JP2004152607 A JP 2004152607A JP 2004152607 A JP2004152607 A JP 2004152607A JP 2005333093 A JP2005333093 A JP 2005333093A
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JP
Japan
Prior art keywords
atoms
semiconductor
resistance element
region
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004152607A
Other languages
English (en)
Japanese (ja)
Inventor
Naoto Kuratani
直人 鞍谷
Takayuki Haruyama
隆之 春山
Keisuke Okamoto
圭介 岡本
Takabumi Yanazaki
高文 柳崎
Shinichi Wada
伸一 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp, Omron Tateisi Electronics Co filed Critical Omron Corp
Priority to JP2004152607A priority Critical patent/JP2005333093A/ja
Priority to TW094116405A priority patent/TW200610155A/zh
Priority to PCT/JP2005/009256 priority patent/WO2005114725A1/fr
Publication of JP2005333093A publication Critical patent/JP2005333093A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66166—Resistors with PN junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Sensors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Fluid Pressure (AREA)
JP2004152607A 2004-05-21 2004-05-21 半導体抵抗素子及びその製造方法並びに半導体抵抗素子を用いた半導体装置 Pending JP2005333093A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004152607A JP2005333093A (ja) 2004-05-21 2004-05-21 半導体抵抗素子及びその製造方法並びに半導体抵抗素子を用いた半導体装置
TW094116405A TW200610155A (en) 2004-05-21 2005-05-20 Semiconductor resistance device and its manufacturing method and the use of semiconductor device with semiconductor resistance device
PCT/JP2005/009256 WO2005114725A1 (fr) 2004-05-21 2005-05-20 Élément de résistance semi-conducteur et sa méthode de fabrication, dispositif semi-conducteur utilisant un élément de résistance semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004152607A JP2005333093A (ja) 2004-05-21 2004-05-21 半導体抵抗素子及びその製造方法並びに半導体抵抗素子を用いた半導体装置

Publications (1)

Publication Number Publication Date
JP2005333093A true JP2005333093A (ja) 2005-12-02

Family

ID=35428617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004152607A Pending JP2005333093A (ja) 2004-05-21 2004-05-21 半導体抵抗素子及びその製造方法並びに半導体抵抗素子を用いた半導体装置

Country Status (3)

Country Link
JP (1) JP2005333093A (fr)
TW (1) TW200610155A (fr)
WO (1) WO2005114725A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012169524A (ja) * 2011-02-16 2012-09-06 Mitsubishi Electric Corp 半導体装置及びその試験方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5896761A (ja) * 1981-12-03 1983-06-08 Matsushita Electronics Corp イオン注入抵抗およびその製造方法
JPH01235366A (ja) * 1988-03-16 1989-09-20 Oki Electric Ind Co Ltd 半導体抵抗素子
JP2002243759A (ja) * 2001-02-13 2002-08-28 Hokuriku Electric Ind Co Ltd 半導体加速度センサ素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012169524A (ja) * 2011-02-16 2012-09-06 Mitsubishi Electric Corp 半導体装置及びその試験方法
US8884383B2 (en) 2011-02-16 2014-11-11 Mitsubishi Electric Corporation Semiconductor device and method of testing the same

Also Published As

Publication number Publication date
TW200610155A (en) 2006-03-16
WO2005114725A1 (fr) 2005-12-01

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