JP2005311327A5 - - Google Patents
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- JP2005311327A5 JP2005311327A5 JP2005081242A JP2005081242A JP2005311327A5 JP 2005311327 A5 JP2005311327 A5 JP 2005311327A5 JP 2005081242 A JP2005081242 A JP 2005081242A JP 2005081242 A JP2005081242 A JP 2005081242A JP 2005311327 A5 JP2005311327 A5 JP 2005311327A5
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- 238000004519 manufacturing process Methods 0.000 claims 12
- 239000003550 marker Substances 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 12
- 230000003287 optical Effects 0.000 claims 6
- 239000000919 ceramic Substances 0.000 claims 2
- 238000007493 shaping process Methods 0.000 claims 2
Claims (22)
前記第１のレーザ光を被照射物の表面において短辺と長辺を有する細長い形状のビームスポットに整形する光学系と、
前記第１のレーザ光に対して前記被照射物を前記ビームスポットの長辺方向および短辺方向に相対的に移動させる手段と、
前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への移動を短辺方向への移動より遅い速度で行う手段と、
レーザ位置決め機構とを有し、
前記レーザ位置決め機構は、第２のレーザ光を射出する第２のレーザ発振器と、前記第２のレーザ光を検出する光検出器とを備え、前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への相対的な移動を制御する手段を有することを特徴とするレーザ照射装置。 A first laser oscillator that emits a first laser beam;
An optical system for shaping the first laser beam into an elongated beam spot having a short side and a long side on the surface of the irradiated object;
Means for moving the irradiation object relative to the first laser beam in the long side direction and the short side direction of the beam spot;
Means for moving the beam spot in the long side direction of the irradiated object with respect to the first laser light at a speed slower than the movement in the short side direction;
A laser positioning mechanism,
The laser positioning mechanism includes a second laser oscillator that emits a second laser beam, and a photodetector that detects the second laser beam, and the object to be irradiated with respect to the first laser beam A laser irradiation apparatus comprising means for controlling relative movement of a beam spot in the long side direction.
前記第１のレーザ光を被照射物の表面において短辺と長辺を有する細長い形状のビームスポットに整形する光学系と、
前記第１のレーザ光に対して前記被照射物を前記ビームスポットの長辺方向および短辺方向に相対的に移動させる手段と、
前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への移動を短辺方向への移動より遅い速度で行う手段と、
前記第１のレーザ光を照射する位置を決定するための画像処理手段と、
レーザ位置決め機構とを有し、
前記レーザ位置決め機構は、第２のレーザ光を射出する第２のレーザ発振器と、前記第２のレーザ光を検出する光検出器とを備え、前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への相対的な移動を制御する手段を有することを特徴とするレーザ照射装置。 A first laser oscillator that emits a first laser beam;
An optical system for shaping the first laser beam into an elongated beam spot having a short side and a long side on the surface of the irradiated object;
Means for moving the irradiated object relative to the first laser beam in the long side direction and the short side direction of the beam spot;
Means for moving the beam spot in the long side direction of the irradiated object with respect to the first laser light at a speed slower than the movement in the short side direction;
Image processing means for determining a position to irradiate the first laser beam;
A laser positioning mechanism,
The laser positioning mechanism includes a second laser oscillator that emits a second laser beam, and a photodetector that detects the second laser beam, and the object to be irradiated with respect to the first laser beam A laser irradiation apparatus comprising means for controlling relative movement of a beam spot in the long side direction.
前記画像処理手段はＣＣＤカメラを有することを特徴とするレーザ照射装置。 In claim 2,
The laser irradiation apparatus, wherein the image processing means has a CCD camera.
前記レーザ位置決め機構は、前記被照射物においてマーカーが形成されている面に前記第２のレーザ光を入射させ、前記マーカーを透過した前記第２のレーザ光を前記光検出器で検出して、前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への相対的な移動を制御する手段を有することを特徴とするレーザ照射装置。 In any one of Claims 1 thru | or 3,
The laser positioning mechanism causes the second laser light to be incident on a surface of the irradiated object on which a marker is formed, detects the second laser light transmitted through the marker with the photodetector, A laser irradiation apparatus comprising: means for controlling relative movement of the irradiation object in the long side direction of the irradiation object with respect to the first laser light.
前記レーザ位置決め機構は、前記被照射物においてマーカーが形成されている面に前記第２のレーザ光を入射させ、前記マーカーに反射された前記第２のレーザ光を前記光検出器で検出して、前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への相対的な移動を制御する手段を有することを特徴とするレーザ照射装置。 In any one of Claims 1 thru | or 3,
The laser positioning mechanism causes the second laser light to be incident on a surface of the irradiated object on which a marker is formed, and detects the second laser light reflected by the marker with the photodetector. A laser irradiation apparatus comprising: means for controlling relative movement of the irradiation object in the long side direction of the irradiation object with respect to the first laser light.
前記レーザ位置決め機構は、
前記第２のレーザ光を複数のレーザ光に分割する光学素子と、前記複数のレーザ光を検出する分割検出器とを有することを特徴とするレーザ照射装置。 In any one of Claims 1 thru | or 5,
The laser positioning mechanism is
A laser irradiation apparatus comprising: an optical element that divides the second laser beam into a plurality of laser beams; and a split detector that detects the plurality of laser beams.
前記レーザ位置決め機構は、２つ以上備わっていることを特徴とするレーザ照射装置。 In any one of Claims 1 thru | or 6,
A laser irradiation apparatus comprising two or more laser positioning mechanisms.
前記レーザ位置決め機構は、前記被照射物上における前記第１のレーザ光を挟んで一直線上に配置していることを特徴とするレーザ照射装置。 In claim 7,
The laser irradiation apparatus is characterized in that the laser positioning mechanism is arranged on a straight line across the first laser beam on the irradiated object.
前記細長い形状のビームスポットは、長方形、線状または楕円のビームスポットであることを特徴とするレーザ照射装置。 In any one of Claims 1 thru | or 8,
2. The laser irradiation apparatus according to claim 1, wherein the elongated beam spot is a rectangular, linear or elliptical beam spot.
前記第１のレーザ発振器は、ＹＡＧレーザ、ＹＶＯ４レーザ、セラミックレーザ、ＧｄＶＯ４レーザ、ＹＬＦレーザ、Ａｒレーザのいずれかが用いられていることを特徴とするレーザ照射装置。 In any one of Claims 1 thru | or 9,
The laser irradiation apparatus according to claim 1, wherein the first laser oscillator is one of a YAG laser, a YVO 4 laser, a ceramic laser, a GdVO 4 laser, a YLF laser, and an Ar laser.
前記第１のレーザ光を発振させながら、前記第１のレーザ光に対して前記走査ステージを前記ビームスポットの長辺方向および短辺方向へ相対的に移動させて前記被照射物をアニールし、
前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への移動を、前記ビームスポットの短辺方向への移動より遅い速度で行い、且つ、前記被照射物においてマーカーが形成されている面に第２のレーザ光を入射させ、前記被照射物に形成されたマーカーを透過した第２のレーザ光を光検出器で検出することによって制御することを特徴とする半導体装置の作製方法。 The first laser beam emitted from the first laser oscillator is shaped to be a long and narrow beam spot having a short side and a long side on the surface of the irradiated object arranged on the scanning stage,
While oscillating the first laser beam, the irradiation stage is annealed by moving the scanning stage relative to the first laser beam in the long side direction and the short side direction of the beam spot,
The irradiation of the irradiated object with respect to the first laser light in the long side direction of the beam spot is performed at a slower speed than the movement of the beam spot in the short side direction, and a marker is formed on the irradiated object. The semiconductor device is controlled by causing a second laser beam to be incident on the surface to be irradiated and detecting the second laser beam transmitted through the marker formed on the irradiated object with a photodetector. Manufacturing method.
前記第１のレーザ光を発振させながら、前記第１のレーザ光に対して前記走査ステージを前記ビームスポットの長辺方向および短辺方向へ相対的に移動させて前記被照射物をアニールし、
前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への移動を、前記ビームスポットの短辺方向への移動より遅い速度で行い、且つ、第２のレーザ発振器から第２のレーザ光を射出し、前記第２のレーザ光を光学素子によって複数のレーザ光に分割し、前記被照射物に形成されたマーカーを透過した前記複数のレーザ光を分割光検出器で検出することによって制御することを特徴とする半導体装置の作製方法。 The first laser beam emitted from the first laser oscillator is shaped to be a long and narrow beam spot having a short side and a long side on the surface of the irradiated object arranged on the scanning stage,
While oscillating the first laser beam, the irradiation stage is annealed by moving the scanning stage relative to the first laser beam in the long side direction and the short side direction of the beam spot,
The object to be irradiated with respect to the first laser light is moved in the long side direction of the beam spot at a speed slower than the movement of the beam spot in the short side direction, and from the second laser oscillator to the second side. The second laser beam is split into a plurality of laser beams by an optical element, and the plurality of laser beams transmitted through the marker formed on the irradiated object are detected by a split photodetector. And a method for manufacturing the semiconductor device.
前記第１のレーザ光を発振させながら、前記第１のレーザ光に対して前記走査ステージを前記ビームスポットの長辺方向および短辺方向へ相対的に移動させて前記被照射物をアニールし、
前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への移動を、前記ビームスポットの短辺方向への移動より遅い速度で行い、且つ、前記被照射物においてマーカーが形成されている面に第２のレーザ光を入射して、前記被照射物に形成されたマーカーに反射された第２のレーザ光を光検出器で検出することによって制御することを特徴とする半導体装置の作製方法。 The first laser beam emitted from the first laser oscillator is shaped to be a long and narrow beam spot having a short side and a long side on the surface of the irradiated object arranged on the scanning stage,
While oscillating the first laser beam, the irradiation stage is annealed by moving the scanning stage relative to the first laser beam in the long side direction and the short side direction of the beam spot,
The irradiation of the irradiated object with respect to the first laser light in the long side direction of the beam spot is performed at a slower speed than the movement of the beam spot in the short side direction, and a marker is formed on the irradiated object. The semiconductor is controlled by making the second laser beam incident on the surface to be irradiated and detecting the second laser beam reflected by the marker formed on the irradiated object with a photodetector. Device fabrication method.
前記第１のレーザ光を発振させながら、前記第１のレーザ光に対して前記走査ステージを前記ビームスポットの長辺方向および短辺方向へ相対的に移動させて前記被照射物をアニールし、
前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への移動を、前記ビームスポットの短辺方向への移動より遅い速度で行い、且つ、第２のレーザ発振器から第２のレーザ光を射出し、前記第２のレーザ光を光学素子によって複数のレーザ光に分割し、前記被照射物に形成されたマーカーに反射された前記複数のレーザ光を分割光検出器で検出することによって制御することを特徴とする半導体装置の作製方法。 The first laser beam emitted from the first laser oscillator is shaped to be a long and narrow beam spot having a short side and a long side on the surface of the irradiated object arranged on the scanning stage,
While oscillating the first laser beam, the irradiation stage is annealed by moving the scanning stage relative to the first laser beam in the long side direction and the short side direction of the beam spot,
The object to be irradiated with respect to the first laser light is moved in the long side direction of the beam spot at a speed slower than the movement of the beam spot in the short side direction, and the second laser oscillator performs second movement. The second laser beam is divided into a plurality of laser beams by an optical element, and the plurality of laser beams reflected by the markers formed on the irradiated object are detected by a split photodetector. And a method for manufacturing the semiconductor device, wherein the control is performed.
前記第１のレーザ光を照射する位置を、画像処理手段によって制御することを特徴とする半導体装置の作製方法。 In any one of Claims 11 thru | or 14,
A method for manufacturing a semiconductor device, wherein the position of irradiation with the first laser light is controlled by image processing means.
前記画像処理手段はＣＣＤカメラを用いることを特徴とする半導体装置の作製方法。 In claim 15,
A method of manufacturing a semiconductor device, wherein the image processing means uses a CCD camera.
前記第１のレーザ光を照射する位置を、
異なる２箇所でそれぞれ２つ以上の第２のレーザ発振器から第２のレーザ光を照射し、前記第２のレーザ光を光学素子によって複数のレーザ光に分割し、前記被照射物に形成されたマーカーに反射された前記複数のレーザ光を分割検出器で同時に異なる２箇所で検出することによって制御することを特徴とする半導体装置の作製方法。 In claim 14,
The position where the first laser beam is irradiated is
Two or more second laser oscillators each irradiate the second laser beam at two different locations, and the second laser beam is divided into a plurality of laser beams by an optical element and formed on the irradiated object. A method of manufacturing a semiconductor device, wherein the plurality of laser beams reflected by a marker are controlled by detecting them at two different locations simultaneously with a split detector.
前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への移動を、前記ビームスポットの短辺方向に細長い形状を有するマーカーを検出することによって制御することを特徴とする半導体装置の作製方法。 In any one of Claims 11 thru / or Claim 17,
The semiconductor which controls the movement of the irradiation object in the long side direction of the irradiated object with respect to the first laser light by detecting a marker having a shape elongated in the short side direction of the beam spot. Device fabrication method.
前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への移動を、前記マーカーの短辺と平行になるように前記ステージを移動することによって制御することを特徴とする半導体装置の作製方法。 In claim 18,
A semiconductor that controls the movement of the irradiated object in the long side direction of the irradiated object with respect to the first laser light by moving the stage so as to be parallel to the short side of the marker. Device fabrication method.
前記第１のレーザ発振器として、ＹＡＧレーザ、ＹＶＯ４レーザ、セラミックレーザ、ＧｄＶＯ４レーザ、ＹＬＦレーザ、Ａｒレーザのいずれかを用いることを特徴とする半導体装置の作製方法。 In any one of claims 11 to 19,
A method for manufacturing a semiconductor device, wherein any of a YAG laser, a YVO 4 laser, a ceramic laser, a GdVO 4 laser, a YLF laser, and an Ar laser is used as the first laser oscillator.
前記細長い形状のビームスポットを長方形、線状または楕円に整形することを特徴とする半導体装置の作製方法。 In any one of claims 11 to 20,
A method for manufacturing a semiconductor device, wherein the elongated beam spot is shaped into a rectangle, a line, or an ellipse.
前記第１のレーザ光に対する前記被照射物の前記ビームスポットの短辺方向への相対的な移動は、１００ｍｍ／ｓｅｃ以上２０ｍ／ｓｅｃ以下で行い、
前記第１のレーザ光に対する前記被照射物の前記ビームスポットの長辺方向への相対的な移動は、１００ｍｍ／ｓｅｃ未満で行うことを特徴とする半導体装置の作製方法。 In any one of Claims 11 to 21,
The relative movement in the short side direction of the beam spot of the irradiated object with respect to the first laser light is performed at 100 mm / sec or more and 20 m / sec or less,
The method for manufacturing a semiconductor device, wherein the relative movement of the irradiation object in the long side direction of the irradiation object with respect to the first laser light is performed at a rate of less than 100 mm / sec.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2005081242A JP5041669B2 (en) | 2004-03-25 | 2005-03-22 | Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus |
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| JP2004090357 | 2004-03-25 | ||
| JP2004090357 | 2004-03-25 | ||
| JP2005081242A JP5041669B2 (en) | 2004-03-25 | 2005-03-22 | Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus |
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| JP2005311327A JP2005311327A (en) | 2005-11-04 |
| JP2005311327A5 true JP2005311327A5 (en) | 2008-04-17 |
| JP5041669B2 JP5041669B2 (en) | 2012-10-03 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004042343B4 (en) * | 2004-09-01 | 2008-01-31 | Innovavent Gmbh | Method and device for modifying amorphous semiconductors by means of laser radiation |
| KR101351474B1 (en) | 2005-12-20 | 2014-01-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Laser irradiation apparatus and laser irradiation method and method for manufacturing semiconductor device |
| JP2008042032A (en) * | 2006-08-08 | 2008-02-21 | Sumitomo Heavy Ind Ltd | Stage driving method and laser working apparatus using the same |
| JP2011056536A (en) * | 2009-09-09 | 2011-03-24 | Sumitomo Heavy Ind Ltd | Apparatus and method for laser beam processing |
| KR101432153B1 (en) * | 2012-11-13 | 2014-08-22 | 삼성디스플레이 주식회사 | Light penetration apparatus and annealing apparatus having the same |
| KR102531817B1 (en) * | 2018-03-28 | 2023-05-12 | 한미반도체 주식회사 | Partial shield processing method for semiconductor member |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH02260419A (en) * | 1989-03-30 | 1990-10-23 | Matsushita Electric Ind Co Ltd | Irradiation with laser |
| JPH0397219A (en) * | 1989-09-11 | 1991-04-23 | Hitachi Ltd | Manufacture and equipment of semiconductor device |
| JPH04186725A (en) * | 1990-11-21 | 1992-07-03 | Hitachi Ltd | Laser annealing device and alignment method |
| JPH0521343A (en) * | 1991-07-15 | 1993-01-29 | Ricoh Co Ltd | Thin film transistor and manufacture thereof |
| JPH10144621A (en) * | 1996-09-10 | 1998-05-29 | Toshiba Corp | Manufacture of polycrystalline silicon, manufacture of semiconductor device, manufacture of liquid crystal display device, and laser annealing device |
| JP4032553B2 (en) * | 1999-03-26 | 2008-01-16 | セイコーエプソン株式会社 | Semiconductor manufacturing equipment |
| JP2003224084A (en) * | 2001-11-22 | 2003-08-08 | Semiconductor Energy Lab Co Ltd | Semiconductor manufacturing equipment |
| JP4279498B2 (en) * | 2002-02-28 | 2009-06-17 | 株式会社 液晶先端技術開発センター | Semiconductor thin film forming method, semiconductor thin film forming apparatus, and crystallization method |
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