JP2005340788A5 - - Google Patents
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- JP2005340788A5 JP2005340788A5 JP2005124031A JP2005124031A JP2005340788A5 JP 2005340788 A5 JP2005340788 A5 JP 2005340788A5 JP 2005124031 A JP2005124031 A JP 2005124031A JP 2005124031 A JP2005124031 A JP 2005124031A JP 2005340788 A5 JP2005340788 A5 JP 2005340788A5
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- 239000004065 semiconductor Substances 0.000 claims 59
- 238000000034 method Methods 0.000 claims 31
- 238000004519 manufacturing process Methods 0.000 claims 16
- 238000000137 annealing Methods 0.000 claims 4
- 238000006073 displacement reaction Methods 0.000 claims 2
- 238000007493 shaping process Methods 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Claims (31)
前記レーザ光をレンズで集光して被照射物の表面に垂直方向から入射させてビームスポットを形成し、
前記レーザ光に対して前記被照射物を前記ビームスポットに対し相対的に移動させて、前記被照射物に前記レーザ光の照射を行い、
前記被照射物を移動させる前に、オートフォーカス機構によって前記被照射物と前記レンズ間の距離を制御することを特徴とするレーザ照射方法。 Laser light is emitted from the laser oscillator,
The laser beam is collected by a lens and incident on the surface of the irradiated object from the vertical direction to form a beam spot,
Wherein by moving the irradiation object the beam spot pair to Relative to respect the laser light performs irradiation of the laser beam on the irradiated object,
Before moving the irradiated object, a laser irradiation method, wherein a distance between the irradiated object and the lens is controlled by an autofocus mechanism.
前記レーザ光をレンズで集光して１方向に沿ってうねりが存在する被照射物の表面に垂直方向から入射させてビームスポットを形成し、
前記レーザ光に対して前記被照射物をうねりが存在する第１の方向および前記第１の方向と直交する第２の方向に相対的に移動させて、前記被照射物に前記レーザ光の照射を行い、
前記第２の方向に移動させる前に、オートフォーカス機構によって前記被照射物と前記レンズ間の距離を制御することを特徴とするレーザ照射方法。 Laser light is emitted from the laser oscillator,
The laser beam is condensed by a lens and incident from the vertical direction on the surface of an object to be swelled along one direction to form a beam spot,
The object to be irradiated is irradiated with the laser light by relatively moving the object to be irradiated in a first direction in which waviness exists and a second direction orthogonal to the first direction. And
Before moving in the second direction, a laser irradiation method, wherein a distance between the object to be irradiated and the lens is controlled by an autofocus mechanism.
前記レーザ光をレンズで集光して１方向に沿ってうねりが存在する被照射物の表面に垂直方向から入射させてビームスポットを形成し、
前記レーザ光に対して前記被照射物をうねりが存在する第１の方向および前記第１の方向と直交する第２の方向に相対的に移動させて、前記被照射物に前記レーザ光の照射を行い、
前記第１の方向への移動時に、オートフォーカス機構によって前記被照射物と前記レンズ間の距離を制御することを特徴とするレーザ照射方法。 Laser light is emitted from the laser oscillator,
The laser beam is condensed by a lens and incident from the vertical direction on the surface of an object to be swelled along one direction to form a beam spot,
The object to be irradiated is irradiated with the laser light by relatively moving the object to be irradiated in a first direction in which waviness exists and a second direction orthogonal to the first direction. And
A laser irradiation method, wherein the distance between the object to be irradiated and the lens is controlled by an autofocus mechanism when moving in the first direction.
前記レーザ光をレンズで集光して被照射物の表面に対して斜め方向から入射させてビームスポットを形成し、
前記レーザ光に対して前記被照射物を前記ビームスポットに対し相対的に移動させて、前記被照射物に前記レーザ光の照射を行い、
前記被照射物を移動させる前に、オートフォーカス機構によって前記被照射物と前記レンズ間の距離を制御することを特徴とするレーザ照射方法。 Laser light is emitted from the laser oscillator,
The laser beam is condensed by a lens and incident on the surface of the irradiated object from an oblique direction to form a beam spot,
The object to be irradiated is moved relative to the beam spot with respect to the laser light to irradiate the object with the laser light,
Before moving the irradiated object, a laser irradiation method, wherein a distance between the irradiated object and the lens is controlled by an autofocus mechanism.
前記レーザ光をレンズで集光して１方向に沿ってうねりが存在する被照射物の表面に対して斜め方向から入射させてビームスポットを形成し、
前記レーザ光に対して前記被照射物をうねりが存在する第１の方向および前記第１の方向と直交する第２の方向に相対的に移動させて、前記被照射物に前記レーザ光の照射を行い、
前記第２の方向に移動させる前に、オートフォーカス機構によって前記被照射物と前記レンズ間の距離を制御することを特徴とするレーザ照射方法。 Laser light is emitted from the laser oscillator,
The laser beam is collected by a lens and incident from an oblique direction on the surface of an object to be irradiated along one direction to form a beam spot,
The object to be irradiated is irradiated with the laser light by relatively moving the object to be irradiated in a first direction in which waviness exists and a second direction orthogonal to the first direction. And
Before moving in the second direction, a laser irradiation method, wherein a distance between the object to be irradiated and the lens is controlled by an autofocus mechanism.
前記レーザ光をレンズで集光して１方向に沿ってうねりが存在する被照射物の表面に対して斜め方向から入射させて前記被照射物の表面にビームスポットを形成し、
前記レーザ光に対して前記被照射物をうねりが存在する第１の方向および前記第１の方向と直交する第２の方向に相対的に移動させて、前記被照射物に前記レーザ光の照射を行い、
前記第１の方向への移動時に、オートフォーカス機構によって前記被照射物と前記レンズ間の距離を制御することを特徴とするレーザ照射方法。 Laser light is emitted from the laser oscillator,
The laser beam is collected by a lens and incident from an oblique direction on the surface of the irradiated object having undulation along one direction to form a beam spot on the surface of the irradiated object,
The object to be irradiated is irradiated with the laser light by relatively moving the object to be irradiated in a first direction in which waviness exists and a second direction orthogonal to the first direction. And
A laser irradiation method, wherein the distance between the object to be irradiated and the lens is controlled by an autofocus mechanism when moving in the first direction.
前記オートフォーカス機構として、接触式変位計を用いることを特徴とするレーザ照射方法。 In any one of Claims 1 thru | or 6 ,
A laser irradiation method using a contact displacement meter as the autofocus mechanism.
前記オートフォーカス機構は、前記レーザ発振器とは異なるレーザ発振器から前記レーザ光と異なる他のレーザ光を射出し、
前記他のレーザ光を前記被照射物の表面に入射させ、前記被照射物の表面に反射された前記他のレーザ光を検出することによって、前記被照射物と前記レンズ間の距離を制御することを特徴とするレーザ照射方法。 In any one of Claims 1 thru | or 6 ,
The autofocus mechanism emits another laser beam different from the laser beam from a laser oscillator different from the laser oscillator,
The other laser beam is incident on the surface of the irradiated object, and the distance between the irradiated object and the lens is controlled by detecting the other laser beam reflected on the surface of the irradiated object. The laser irradiation method characterized by the above-mentioned.
前記オートフォーカス機構は、前記レーザ発振器とは異なるレーザ発振器から前記レーザ光と異なる他のレーザ光を射出し、
前記他のレーザ光を前記被照射物の表面に斜め方向から入射させ、前記被照射物の表面に反射された前記他のレーザ光を検出することによって、前記被照射物と前記レンズ間の距離を制御することを特徴とするレーザ照射方法。 In any one of Claims 1 thru | or 3 ,
The autofocus mechanism emits another laser beam different from the laser beam from a laser oscillator different from the laser oscillator,
The other laser beam is incident on the surface of the irradiated object from an oblique direction, and the other laser beam reflected on the surface of the irradiated object is detected to detect the distance between the irradiated object and the lens. The laser irradiation method characterized by controlling .
前記被照射物の表面に反射された前記他のレーザ光の検出を、４分割検出器、ＣＣＤまたはＰＳＤを用いて行うことを特徴とするレーザ照射方法。 In claim 8 or 9 ,
A laser irradiation method, wherein the other laser beam reflected on the surface of the irradiation object is detected using a quadrant detector, a CCD or a PSD.
前記ビームスポットの形状を長辺方向および短辺方向を有する長方形、楕円または線状に整形し、
前記ビームスポットの前記長辺方向を前記第１の方向と平行になるように配置させることを特徴とするレーザ照射方法。 In any one of Claims 2, 3, 5, and 6 ,
Shaping the shape of the beam spot into a rectangle having a long side direction and a short side direction, an ellipse or a line,
A laser irradiation method, wherein the long side direction of the beam spot is arranged so as to be parallel to the first direction.
前記被照射物と前記レンズ間の距離の制御は、前記第１の方向および第２の方向に対して垂直な第３の方向に、前記被照射物または前記レンズを移動することによって行われることを特徴とするレーザ照射方法。 In any one of Claims 2 , 3 , 5 , and 6 ,
Control of the distance between the irradiated object and the lens is performed by moving the irradiated object or the lens in a third direction perpendicular to the first direction and the second direction. A laser irradiation method characterized by the above.
前記レーザ光に対する前記被照射物の第１の方向への移動を、前記第２の方向への移動より低速で行うことを特徴とするレーザ照射方法。 In any one of Claims 2 , 3 , 5 , and 6 ,
The laser irradiation method, wherein the object to be irradiated is moved in the first direction with respect to the laser light at a lower speed than the movement in the second direction.
前記レーザ発振器として、ＹＡＧレーザ、ＹＶＯ４レーザ、ＧｄＶＯ４レーザ、ＹＬＦレーザ、Ａｒレーザのいずれかを用いることを特徴とするレーザ照射方法。 In any one of Claims 1 thru | or 13 ,
A laser irradiation method using any one of a YAG laser, a YVO 4 laser, a GdVO 4 laser, a YLF laser, and an Ar laser as the laser oscillator.
前記レーザ発振器として、数１０ｐｓ以下のパルス幅をもつパルスレーザを用いることを特徴とするレーザ照射方法。 In any one of Claims 1 thru | or 14 ,
A laser irradiation method using a pulse laser having a pulse width of several tens ps or less as the laser oscillator.
前記レーザ光をレンズで集光して半導体膜の表面に垂直方向から入射させてビームスポットを形成し、
前記レーザ光に対して前記半導体膜を前記ビームスポットに対し相対的に移動させて、前記半導体膜に前記レーザ光を照射して前記半導体膜のアニールを行い、
前記半導体膜を移動する前に、オートフォーカス機構によって前記半導体膜と前記レンズ間の距離を制御することを特徴とする半導体装置の作製方法。 Laser light is emitted from the laser oscillator,
The laser beam is collected by a lens and incident on the surface of the semiconductor film from the vertical direction to form a beam spot,
The semiconductor film is moved relative to the beam spot with respect to the laser light, and the semiconductor film is irradiated with the laser light to anneal the semiconductor film,
A method for manufacturing a semiconductor device, wherein the distance between the semiconductor film and the lens is controlled by an autofocus mechanism before the semiconductor film is moved.
前記レーザ光をレンズで集光して１方向に沿ってうねりが存在する半導体膜の表面に垂直方向から入射させてビームスポットを形成し、
前記レーザ光に対して前記半導体膜をうねりが存在する第１の方向および前記第１の方向と直交する第２の方向に相対的に移動させて、前記半導体膜に前記レーザ光を照射して前記半導体膜のアニールを行い、
前記第２の方向に移動させる前に、オートフォーカス機構によって前記半導体膜と前記レンズ間の距離を制御することを特徴とする半導体装置の作製方法。 Laser light is emitted from the laser oscillator,
The laser beam is collected by a lens and incident from the vertical direction on the surface of the semiconductor film in which waviness exists along one direction to form a beam spot,
The semiconductor film is moved relative to the laser light in a first direction in which waviness exists and in a second direction orthogonal to the first direction, and the semiconductor film is irradiated with the laser light. Annealing the semiconductor film,
A method for manufacturing a semiconductor device, wherein the distance between the semiconductor film and the lens is controlled by an autofocus mechanism before the movement in the second direction.
前記レーザ光をレンズで集光して１方向に沿ってうねりが存在する半導体膜の表面に垂直方向から入射させてビームスポットを形成し、
前記レーザ光に対して前記半導体膜をうねりが存在する第１の方向および前記第１の方向と直交する第２の方向に相対的に移動させて、前記半導体膜に前記レーザ光を照射して前記半導体膜のアニールを行い、
前記第１の方向への移動時に、オートフォーカス機構によって前記半導体膜と前記レンズ間の距離を制御することを特徴とする半導体装置の作製方法。 Laser light is emitted from the laser oscillator,
The laser beam is collected by a lens and incident from the vertical direction on the surface of the semiconductor film in which waviness exists along one direction to form a beam spot,
The semiconductor film is moved relative to the laser light in a first direction in which waviness exists and in a second direction orthogonal to the first direction, and the semiconductor film is irradiated with the laser light. Annealing the semiconductor film,
A method for manufacturing a semiconductor device, wherein the distance between the semiconductor film and the lens is controlled by an autofocus mechanism during movement in the first direction.
前記レーザ光をレンズで集光して半導体膜の表面に対して斜め方向から入射させてビームスポットを形成し、
前記レーザ光に対して前記半導体膜を前記ビームスポットに対し相対的に移動させて、前記半導体膜に前記レーザ光を照射して前記半導体膜のアニールを行い、
前記半導体膜を移動させる前に、オートフォーカス機構によって前記半導体膜と前記レンズ間の距離を制御することを特徴とする半導体装置の作製方法。 Laser light is emitted from the laser oscillator,
The laser beam is condensed by a lens and incident on the surface of the semiconductor film from an oblique direction to form a beam spot,
The semiconductor film is moved relative to the beam spot with respect to the laser light, and the semiconductor film is irradiated with the laser light to anneal the semiconductor film,
A method for manufacturing a semiconductor device, wherein the distance between the semiconductor film and the lens is controlled by an autofocus mechanism before the semiconductor film is moved.
前記レーザ光をレンズで集光して１方向に沿ってうねりが存在する半導体膜の表面に対して斜め方向から入射させてビームスポットを形成し、
前記レーザ光に対して前記半導体膜をうねりが存在する第１の方向および前記第１の方向と直交する第２の方向に相対的に移動させて、前記半導体膜に前記レーザ光を照射して前記半導体膜のアニールを行い、
前記第２の方向に移動させる前に、オートフォーカス機構によって前記半導体膜と前記レンズ間の距離を制御することを特徴とする半導体装置の作製方法。 Laser light is emitted from the laser oscillator,
The laser beam is collected by a lens and incident on the surface of the semiconductor film having undulation along one direction from an oblique direction to form a beam spot,
The semiconductor film is moved relative to the laser light in a first direction in which waviness exists and in a second direction orthogonal to the first direction, and the semiconductor film is irradiated with the laser light. Annealing the semiconductor film,
A method for manufacturing a semiconductor device, wherein the distance between the semiconductor film and the lens is controlled by an autofocus mechanism before the movement in the second direction.
前記レーザ光をレンズで集光して１方向に沿ってうねりが存在する半導体膜の表面に対して斜め方向から入射させてビームスポットを形成し、
前記レーザ光に対して前記半導体膜をうねりが存在する第１の方向および前記第１の方向と直交する第２の方向に相対的に移動させて、前記半導体膜に前記レーザ光を照射して前記半導体膜のアニールを行い、
前記第１の方向への移動時に、オートフォーカス機構によって前記半導体膜と前記レンズ間の距離を制御することを特徴とする半導体装置の作製方法。 Laser light is emitted from the laser oscillator,
The laser beam is condensed by a lens and incident from an oblique direction on the surface of the semiconductor film where waviness exists along one direction to form a beam spot,
The semiconductor film is moved relative to the laser beam in a first direction in which waviness exists and in a second direction orthogonal to the first direction, and the semiconductor film is irradiated with the laser beam. Annealing the semiconductor film,
A method for manufacturing a semiconductor device, wherein the distance between the semiconductor film and the lens is controlled by an autofocus mechanism during movement in the first direction.
前記半導体膜は、１方向にそってうねりが存在するガラス基板上に設けることを特徴とする半導体装置の作製方法。 A device according to any one of claims 16 to 21 .
A method for manufacturing a semiconductor device, wherein the semiconductor film is provided over a glass substrate having undulation along one direction.
前記オートフォーカス機構として、接触式変位計を用いることを特徴とする半導体装置の作製方法。 In any one of claims 16 to 22 ,
A method for manufacturing a semiconductor device, wherein a contact displacement meter is used as the autofocus mechanism.
前記オートフォーカス機構は、前記レーザ発振器とは異なるレーザ発振器から前記レーザ光と異なる他のレーザ光を射出し、
前記他のレーザ光を前記半導体膜の表面に入射させ、前記半導体膜の表面に反射された前記他のレーザ光を検出することによって、前記半導体膜と前記レンズ間の距離を制御することを特徴とする半導体装置の作製方法。 According to any one of claims 16乃Itaru 22,
The autofocus mechanism emits another laser beam different from the laser beam from a laser oscillator different from the laser oscillator,
The distance between the semiconductor film and the lens is controlled by causing the other laser light to enter the surface of the semiconductor film and detecting the other laser light reflected on the surface of the semiconductor film. A method for manufacturing a semiconductor device.
前記オートフォーカス機構は、前記レーザ発振器とは異なるレーザ発振器から前記レーザ光と異なる他のレーザ光を射出し、
前記他のレーザ光を前記半導体膜の表面に斜め方向から入射させ、前記半導体膜の表面に反射された前記他のレーザ光を検出することによって、前記半導体膜と前記レンズ間の距離を制御することを特徴とする半導体装置の作製方法。 In any one of claims 16 to 18 ,
The autofocus mechanism emits another laser beam different from the laser beam from a laser oscillator different from the laser oscillator,
The other laser light is incident on the surface of the semiconductor film from an oblique direction, and the distance between the semiconductor film and the lens is controlled by detecting the other laser light reflected on the surface of the semiconductor film. A method for manufacturing a semiconductor device.
前記半導体膜の表面に反射された前記他のレーザ光の検出を、４分割検出器、ＣＣＤまたはＰＳＤを用いて行うことを特徴とする半導体装置の作製方法。 In claim 24 or 25 ,
A method for manufacturing a semiconductor device, wherein the other laser light reflected on the surface of the semiconductor film is detected using a quadrant detector, a CCD, or a PSD.
前記ビームスポットの形状を長辺および短辺を有する長方形、楕円または線状に整形し、
前記ビームスポットの前記長辺方向を前記第１の方向と平行になるように配置させることを特徴とする半導体装置の作製方法。 In any one of Claims 17 , 18 , 20 , and 21 ,
Shaping the shape of the beam spot into a rectangle having a long side and a short side, an ellipse or a line,
A method for manufacturing a semiconductor device, wherein the long side direction of the beam spot is arranged to be parallel to the first direction.
前記半導体膜と前記レンズ間の距離の制御は、前記第１の方向および第２の方向に対して垂直な第３の方向に、前記半導体膜または前記レンズを移動することによって行われることを特徴とする半導体装置の作製方法。 In any one of Claims 17, 18, 20, and 21 ,
The distance between the semiconductor film and the lens is controlled by moving the semiconductor film or the lens in a third direction perpendicular to the first direction and the second direction. A method for manufacturing a semiconductor device.
前記レーザ光に対する前記半導体膜の第１の方向への移動を、前記第２の方向への移動より低速で行うことを特徴とする半導体装置の作製方法。 In any one of Claims 17 , 18 , 20 , and 21 ,
A method for manufacturing a semiconductor device, wherein the semiconductor film is moved in the first direction with respect to the laser light at a lower speed than the movement in the second direction.
前記レーザ発振器として、ＹＡＧレーザ、ＹＶＯ４レーザ、ＧｄＶＯ４レーザ、ＹＬＦレーザ、Ａｒレーザのいずれかを用いることを特徴とする半導体装置の作製方法。 30.In any one of claims 16 to 29 .
A method for manufacturing a semiconductor device, wherein any of a YAG laser, a YVO 4 laser, a GdVO 4 laser, a YLF laser, and an Ar laser is used as the laser oscillator.
前記レーザ発振器として、数１０ｐｓ以下のパルス幅をもつパルスレーザを用いることを特徴とする半導体装置の作製方法。 In any one of claims 16 to 30 ,
A method for manufacturing a semiconductor device, wherein a pulse laser having a pulse width of several tens of ps or less is used as the laser oscillator.
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| JP2005124031A JP2005340788A (en) | 2004-04-28 | 2005-04-21 | Laser irradiation method, and semiconductor device formation method using the same |
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| JP2005124031A JP2005340788A (en) | 2004-04-28 | 2005-04-21 | Laser irradiation method, and semiconductor device formation method using the same |
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| JP2005124031A Withdrawn JP2005340788A (en) | 2004-04-28 | 2005-04-21 | Laser irradiation method, and semiconductor device formation method using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7547866B2 (en) * | 2004-04-28 | 2009-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method for manufacturing semiconductor device including an autofocusing mechanism using the same |
| JP2007208015A (en) * | 2006-02-02 | 2007-08-16 | Shimadzu Corp | Crystallization device |
| CN101432851B (en) * | 2006-03-30 | 2011-06-15 | 日立电脑机器株式会社 | Laser irradiation device, laser irradiation method, and method for manufacturing modified object |
| JP5120685B2 (en) * | 2006-12-25 | 2013-01-16 | 株式会社Ｉｈｉ | Laser annealing method and laser annealing apparatus |
| JP5286482B2 (en) * | 2007-08-13 | 2013-09-11 | 株式会社日立情報通信エンジニアリング | Semiconductor manufacturing equipment |
| JP2009072789A (en) * | 2007-09-18 | 2009-04-09 | Hamamatsu Photonics Kk | Laser machining apparatus |
| KR101551498B1 (en) | 2009-12-03 | 2015-09-09 | (주) 유로비젼레이저 | Apparatus for heat treating metal surface with laser in vacuum chamber |
| US8962386B2 (en) * | 2011-11-25 | 2015-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2013080252A1 (en) * | 2011-11-29 | 2013-06-06 | パナソニック株式会社 | Method for forming crystalline thin film, and method for manufacturing thin film transistor |
| JP2015050282A (en) * | 2013-08-30 | 2015-03-16 | 株式会社日立情報通信エンジニアリング | Laser annealing device and laser annealing method |
| CN107078021B (en) * | 2014-08-27 | 2021-09-14 | 努布鲁有限公司 | Applications, methods and systems for material processing using visible Raman lasers |
| CN113066716B (en) * | 2021-03-26 | 2024-02-13 | 常州时创能源股份有限公司 | Laser transfer printing method |
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| JPS6074513A (en) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP2683241B2 (en) * | 1988-02-19 | 1997-11-26 | 富士通株式会社 | Annealing device using energy beam |
| JP3346214B2 (en) * | 1997-03-26 | 2002-11-18 | セイコーエプソン株式会社 | Method for manufacturing crystalline semiconductor film, annealing apparatus, method for manufacturing thin film transistor, and active matrix substrate for liquid crystal display device |
| JP2000263261A (en) * | 1999-03-16 | 2000-09-26 | Matsushita Electric Ind Co Ltd | Laser beam machining device and method of laser beam machining using same device |
| JP3410989B2 (en) * | 1999-08-02 | 2003-05-26 | 住友重機械工業株式会社 | Precision laser irradiation apparatus and control method |
| JP2002219591A (en) * | 2001-01-22 | 2002-08-06 | Toshiba Corp | Laser beam irradiation device |
| JP2003224083A (en) * | 2001-10-30 | 2003-08-08 | Semiconductor Energy Lab Co Ltd | Laser irradiation equipment |
| JP4417613B2 (en) * | 2002-06-27 | 2010-02-17 | 東芝モバイルディスプレイ株式会社 | Method and apparatus for crystallizing semiconductor thin film |
| JP4813743B2 (en) * | 2002-07-24 | 2011-11-09 | 株式会社 日立ディスプレイズ | Manufacturing method of image display device |
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