JPH04186725A - Laser annealing device and alignment method - Google Patents

Laser annealing device and alignment method

Info

Publication number
JPH04186725A
JPH04186725A JP31387790A JP31387790A JPH04186725A JP H04186725 A JPH04186725 A JP H04186725A JP 31387790 A JP31387790 A JP 31387790A JP 31387790 A JP31387790 A JP 31387790A JP H04186725 A JPH04186725 A JP H04186725A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
alignment
light
transmitted
laser
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31387790A
Inventor
Yasuhiro Mochizuki
Kazuhiro Ogawa
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To simplify alignment at the time of local laser annealing without using a mask by forming an alignment pattern on a base film of a crystallize film and utilizing transmitted light of laser light to perform alignment.
CONSTITUTION: A sample 17 with alignment patterns formed on both ends of a crystallized region is set on a stage 16, and two alignment laser beams 10 are applied to the two alignment patterns. Transmitted light from the sample 17 is sensed by a photodetector 12 placed on a back of a substrate. Alignment is done by micro-scanning in X- and Y-directions so that the transmitted light is maximum. A signal sensed by the photodetector 12 is calculated by a signal processing circuit 13, and the results are transmitted to a feedback mechanism 14. The feedback mechanism 14 instructs a scanning direction of the stage 16 to a stage controller 15 so that the transmitted light is maximum. This process allows automatic alignment.
COPYRIGHT: (C)1992,JPO&Japio
JP31387790A 1990-11-21 1990-11-21 Laser annealing device and alignment method Pending JPH04186725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31387790A JPH04186725A (en) 1990-11-21 1990-11-21 Laser annealing device and alignment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31387790A JPH04186725A (en) 1990-11-21 1990-11-21 Laser annealing device and alignment method

Publications (1)

Publication Number Publication Date
JPH04186725A true true JPH04186725A (en) 1992-07-03

Family

ID=18046585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31387790A Pending JPH04186725A (en) 1990-11-21 1990-11-21 Laser annealing device and alignment method

Country Status (1)

Country Link
JP (1) JPH04186725A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759628B1 (en) * 1996-06-20 2004-07-06 Sony Corporation Laser annealing apparatus
US6822263B2 (en) 1999-11-18 2004-11-23 Nec Corporation Thin film transistor formed on a transparent substrate
JP2005311327A (en) * 2004-03-25 2005-11-04 Semiconductor Energy Lab Co Ltd Laser irradiating equipment and forming method of semiconductor device using the same
JP2008153638A (en) * 2006-11-24 2008-07-03 Semiconductor Energy Lab Co Ltd Substrate with marker, manufacturing method of same, laser irradiation device and method, exposure system, and manufacturing method of semiconductor device
WO2008117355A1 (en) * 2007-03-22 2008-10-02 Pioneer Corporation Semiconductor substrate manufacturing device, semiconductor substrate manufacturing method and semiconductor substrate
US7615384B2 (en) 2002-03-26 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of manufacturing the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759628B1 (en) * 1996-06-20 2004-07-06 Sony Corporation Laser annealing apparatus
US6822263B2 (en) 1999-11-18 2004-11-23 Nec Corporation Thin film transistor formed on a transparent substrate
US7119363B2 (en) 1999-11-18 2006-10-10 Nec Corporation Thin film transistor formed on a transparent substrate
US7585708B2 (en) 1999-11-18 2009-09-08 Nec Corporation Method for manufacturing a thin-film transistor
US7615384B2 (en) 2002-03-26 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of manufacturing the same
JP2005311327A (en) * 2004-03-25 2005-11-04 Semiconductor Energy Lab Co Ltd Laser irradiating equipment and forming method of semiconductor device using the same
JP2008153638A (en) * 2006-11-24 2008-07-03 Semiconductor Energy Lab Co Ltd Substrate with marker, manufacturing method of same, laser irradiation device and method, exposure system, and manufacturing method of semiconductor device
WO2008117355A1 (en) * 2007-03-22 2008-10-02 Pioneer Corporation Semiconductor substrate manufacturing device, semiconductor substrate manufacturing method and semiconductor substrate
JPWO2008117355A1 (en) * 2007-03-22 2010-07-08 パイオニア株式会社 Semiconductor substrate manufacturing apparatus, a semiconductor substrate manufacturing method and a semiconductor substrate

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