JP4322373B2 - Film body part reforming apparatus and film body part reforming method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film body part reforming apparatus and a film body part reforming method, and in particular, a film capable of efficiently modifying a desired part of a film body using a laser beam. The present invention relates to a body part reforming apparatus and a film body part reforming method.
[0002]
[Prior art]
Conventionally, a method for forming a thin film transistor (TFT) on a glass substrate has been known as a representative technique as an example of a film body part reforming apparatus or a film body part reforming method. Includes hydrogenated amorphous silicon TFT technology and polycrystalline silicon TFT technology.
[0003]
The former has a maximum manufacturing process temperature of about 300 ° C and a mobility of 1 cm.² / Vsec carrier mobility is realized. This technology is used as a switching transistor for each pixel in an active matrix liquid crystal display (AM-LCD) and is driven by a driver integrated circuit (IC, LSI formed on a single crystal silicon substrate) arranged around the screen. The
[0004]
Since each pixel is provided with a switching element TFT, it has a feature that crosstalk and the like can be reduced and good image quality can be obtained as compared with a passive matrix LCD that transmits an electric signal for driving liquid crystal from a peripheral driver circuit.
[0005]
On the other hand, the latter uses, for example, a quartz substrate and a high temperature process similar to an LSI of about 1000 ° C., so that the carrier mobility is 30 to 100 cm.² / Vsec performance can be obtained.
[0006]
The realization of such high carrier mobility is a manufacturing process in which, for example, when applied to a liquid crystal display, the pixel TFT for driving each pixel and the peripheral drive circuit section can be simultaneously formed on the same glass substrate. There are advantages relating to cost reduction and downsizing.
[0007]
In other words, the connection pitch between the AM-LCD substrate and the peripheral driver integrated circuit is narrowed by downsizing and high resolution, and the tab connection or wire bonding method cannot cope with it.
[0008]
However, in the polycrystalline silicon TFT technology, when the high temperature process as described above is used, an inexpensive low softening point glass that can be used by the former process cannot be used. Therefore, it is necessary to reduce the temperature of the polycrystalline silicon TFT process, and a technique for forming a polycrystalline silicon film at a low temperature by applying a laser crystallization technique has been developed.
[0009]
In general, a method of supplying light for laser crystallization is performed by a configuration as shown in FIG.
[0010]
That is, the laser beam supplied from the pulsed laser light source is subjected to an optical path constituted by a plurality of mirror groups and an optical element group such as a beam homogenizer and a beam expander installed to make the spatial intensity uniform. It reaches the silicon thin film 1101 on the glass substrate which is the irradiated body, that is, the film body to be processed.
[0011]
A desired area 1103 of the silicon thin film is crystallized by changing the beam irradiation shape to a linear line 1102 and irradiating the beam while moving the Y stage on which the substrate is arranged.
[0012]
At this time, the oscillation control of the laser light source and the movement of the Y stage are performed at a timing as shown in FIG. The stage movement and supply of pulsed light at this time are performed by the following method, for example.
[0013]
1) The stage moves at a constant speed, and at the same time, a pulse laser oscillates at a constant cycle.
2) Repeat (stage one step move and stop) + (pulse laser supply 1 pulse)
FIG. 12 shows a conventional irradiation method when the beam irradiation shape is rectangular.
[0014]
  Generally compared to glass substratesBeshoSince the irradiation range 1102 is small, laser irradiation to an arbitrary position on the substrate is performed by moving the glass substrate 1101 on the XY stage.
[0015]
Instead of the XY stage, a method of combining the movement of the optical element group (for example, the X direction) and the movement of the stage (Y direction) is also used.
[0016]
By using such a method, the crystallized regions 1103 are sequentially formed.
[0017]
The stage movement and supply of pulsed light at this time are performed by the following method.
[0018]
3) The stage moves at a constant speed, and at the same time, the pulse laser oscillates at a constant cycle.
4) (Stage is moved by 1 step on stage) + (Supply more than 1 pulse of pulse laser) is repeated
In laser crystallization using a linear beam or a rectangular beam, in cases such as 2) and 4), it has been attempted to use movement of the optical path instead of movement of the substrate stage. In the case of 3), an irradiation method using a moving means of the optical path was not taken.
[0019]
[Problems to be solved by the invention]
When the above method is used, the silicon thin film is melted in the beam irradiation area, and nuclei are randomly formed to obtain a polycrystalline thin film or a microcrystalline thin film. The size (channel length, channel width) of the active region of the thin film transistor formed using the thin film is sufficiently larger than the crystal grain size (or crystallite size) in the polycrystalline thin film and microcrystalline thin film thus formed. If it is large, the characteristic uniformity of the thin film transistor adjacent to or on the substrate is good.
[0020]
However, miniaturization of the thin film transistor (that is, shortening the channel length) has progressed when high driving capability is required. When the crystal grain size and the channel size reach the same level, the number of crystal grain boundaries existing in the thin film transistor greatly affects the characteristics. Therefore, there is a problem that the characteristic difference becomes remarkable between adjacent transistors.
[0021]
As a means for overcoming the above problems, for example, there is a technique for irradiating a silicon thin film while stepping a beam having a line width of several microns in submicron to micron units to obtain a large grain silicon crystal. R. Sposili and J. Im, “Sequential lateral solidification of thin silicon films on SiO 2”, Applied Physics Letters, vol. 69, (1996), 2864.
[0022]
When such a method is used for manufacturing a large area device such as a liquid crystal display, a stage with high operation accuracy is required.
[0023]
  In general, the substrate size used for manufacturing is several hundreds of millimeters.,The board transfer mechanism with automatic operation has a fixed board transfer position with the robot.,From the above, in the operation of returning to the substrate delivery position with the robot after completion of irradiation, this stage is required to operate at high speed. Therefore, a stage having characteristics of both operation accuracy, particularly position accuracy and high-speed operation is required.
[0024]
In addition, the republished patent WO 97/23806 discloses a method of annealing an amorphous silicon film formed on a substrate with a laser. However, in this publication, the laser beam is fixed, and only the substrate is appropriately used. However, there is no disclosure regarding a technique for moving the optical path of the laser beam simultaneously with the movement of the substrate.
[0025]
Japanese Patent Laid-Open No. 10-41244 discloses that a plurality of linear laser beams are used in order to make the crystallinity of the object to be processed uniform, but any laser beam is fixed. The stage on which the object to be processed is simply moved is configured to move, and there is no disclosure regarding a technique for moving the optical path of the laser beam simultaneously with the movement of the stage.
[0026]
The object of the present invention is to improve the above-mentioned drawbacks of the prior art, and to manufacture a large-sized device, a film body part capable of easily and efficiently performing a modification treatment operation of the film body part to be processed. A reforming apparatus and a film body portion reforming method are provided.
[0027]
[Means for Solving the Problems]
  In order to achieve the above-described object, the present invention basically employs a technical configuration as described below.
  That is, in the present inventionRelated film body reformerAs an aspect of
  A light source, a light beam emitted from the light source is shaped into a desired shape, an optical path moving means for directing the shaped light beam in a desired direction, and a substrate including a film body to be processed are mounted, The desired part of the film body to be processedShaped light beamThe film body portion reforming apparatus is configured to be movable so as to correspond to the above, and the operation accuracy of the optical path moving unit is higher than the operation accuracy of the substrate moving unit. Is composed ofThe optical path moving means has a plurality of mask patterns for forming a plurality of types of shaped light beams having a cross-sectional area smaller than the cross-sectional area of the light beam emitted from the light source, and the optical path moving means In the film body portion reforming apparatus including the mask pattern for alignment mark formation, the mask pattern in
  The film body to be processed is non-crystallized silicon, and crystallized silicon is obtained after modification,
  The film body part reforming apparatus includes a control unit, and the control unit is a molding having a desired shape so as to reform a desired part of the film body part to be processed mounted on the substrate. In order to direct the light beam to a desired site in the film body to be processed, pattern selection control means for selecting a desired pattern from the plurality of mask patterns and the selected mask pattern are used. First irradiation position control means for moving the substrate to a desired position in order to move a desired part in the film body to be processed within the movement range region of the optical path by the shaped light beam thus formed. A second irradiation position control means for moving the optical path moving means to a desired position while referring to an alignment mark formed on the substrate, and a light source drive control means for driving the light source. And,
  Control meansBy the desiredIrradiationpositionConcernedMoving a desired part of the target film body mounted on the substrate;alignmentDo the actionIrradiationAdjusting the position;ConcernedSequentially irradiating light onto the target film body mounted on the substrate.ThingsCharacterized byIs.
[0028]
DETAILED DESCRIPTION OF THE INVENTION
Since the film body part reforming apparatus and the film body part reforming method according to the present invention employ the technical configuration as described above, for example, when used for manufacturing a large area device such as a liquid crystal display. However, it is possible to provide a high-throughput reforming apparatus for a film body to be processed and a method for reforming a film body to be processed by realizing both a stage with high operation accuracy and a stage that requires high-speed operation. Can do.
[0029]
By aligning the beam using the alignment function to the mark formed on the substrate on which the silicon film is deposited, it becomes possible to expose a desired region with a positional accuracy of the order of μm or more. It was.
[0030]
That is, the film body part reforming apparatus and the film body part reforming method according to the present invention are more specifically a high-quality semiconductor for application to a silicon thin film and a field effect transistor used for a crystalline silicon thin film transistor. -It can be put into practical use as an insulating film interface forming apparatus or a semiconductor-insulating film interface forming method, and can also be put into practical use as a semiconductor thin film manufacturing apparatus and its manufacturing method using pulsed laser light. .
[0031]
Furthermore, the present invention can also be used as a manufacturing device and a manufacturing method of a driving element or driving circuit such as a display or a sensor constituted by the semiconductor thin film or the field effect thin film transistor.
[0032]
Therefore, as a more specific aspect of the film body portion reforming apparatus in the present invention, in the semiconductor thin film forming apparatus for irradiating the surface of the substrate having the semiconductor layer with a desired intensity distribution with light supplied from a light source, It may be a semiconductor thin film forming apparatus having an optical path moving mechanism with higher operation accuracy than the substrate moving mechanism, thereby allowing high-speed operation to the substrate stage and high-position accuracy operation to the optical path stage, respectively. Both operation accuracy and high-speed operation can be achieved.
[0033]
More specifically, in the present invention, in the semiconductor thin film forming apparatus described above, the first irradiation position control by the substrate movement mechanism, the alignment control by the optical path or the substrate movement mechanism, and the movement of the optical path. The second irradiation position control may be sequentially performed, and the semiconductor thin film forming apparatus may be controlled so that the second position control process and the light supply are performed simultaneously or alternately.
[0034]
【Example】
Hereinafter, the configuration of a specific example of the film body portion reforming apparatus and the film body portion reforming method according to the present invention will be described in detail with reference to the drawings.
[0035]
  That is, FIG. 1 and FIG. 2 are a plan view and a side sectional view showing an outline of a configuration of a specific example of the film body portion reforming apparatus 100 according to the present invention, in which the light source 10 and the light source 10 emit light. The light beam 20 to be formed is shaped into a desired shape, and the substrate 4 including the optical path moving means 3 for directing the shaped light beam 25 in a desired direction and the film body 2 to be processed is mounted. The desired part 30 of the treatment film body part 2 isShaped light beam 25The film body portion reforming apparatus 100 is configured to be movable so as to correspond to the above-mentioned, and the operation accuracy of the optical path moving unit 3 is higher than the operation accuracy of the substrate moving unit 1. The film body part reforming apparatus 100 configured to be higher is also shown. The moving range of the optical path moving means 3 in the present invention is preferably configured to be narrower than the moving range of the substrate moving means 1, and the moving speed of the optical path moving means 3 is It is also desirable to be configured so as to be slower than the moving speed of the substrate moving means 1.
[0036]
On the other hand, the optical path moving unit 3 and the substrate moving unit 1 in the present invention may be configured to move in the same direction, and both are configured to be movable in opposite directions. Also good.
[0037]
  In the present invention, the optical path moving means 3 and the substrate moving means 1 may be controlled so as to move simultaneously with each other, or both may move individually. It can be controlledYes.
[0038]
Further, the optical path moving means 3 according to the present invention has a mask pattern 8 as shown in FIG. 5A. The mask pattern includes, for example, a slit-shaped opening 91 and an oblique short. A predetermined number of slit openings 92, bowl-shaped openings 93, annular openings 94, and the like are arranged at predetermined intervals.
[0039]
Further, the mask pattern 8 may be provided with slit openings 95 and 96 for forming alignment marks.
[0040]
Further, the mask pattern 8 may be provided with an opening 97 for detecting the alignment mark.
[0041]
That is, the optical path moving means 3 in the present invention is one for forming one or plural kinds of shaped light beams having a cross-sectional area smaller than the cross-sectional area of the light beam 20 emitted from the light source 10. It is desirable to have one or a plurality of mask patterns 91-96.
[0042]
Further, it is desirable that the mask pattern 8 in the optical path moving means 3 includes a mask pattern 97 for forming alignment marks.
[0043]
In the present invention, when the optical path moving means 3 is moved, at least one of the mask patterns is selected, and the optical path 26 of the shaped beam 25 is set to a predetermined part of the processed film body 2. In this case, not only one mask pattern is selected, but also a plurality of mask patterns are selected and a plurality of shaped beams are simultaneously selected as shown in FIG. It is also possible to form and output 25 and 25 ′.
[0044]
  In the present invention, the substrate 4 may be provided with an alignment mark 5 at a predetermined position. On the substrate 4,InitiallyThe alignment mark 5 is not formed, and the alignment mark 95 or 96 provided on the mask pattern 8 is used for alignment on the substrate 4 when the first modification processing operation is performed. The mark 5 may be formed, and thereafter, the alignment operation may be executed while detecting the alignment marks 95 and 96 formed in the previous operation sequentially.
[0045]
That is, the alignment marks 96 and 95 provided on the mask pattern 8 in the optical path moving means 3 are used in the above-described manner.
[0046]
The film body to be processed according to the present invention is not particularly limited. For example, it is a thin film-like chemical substance formed on the substrate 4, and is used for manufacturing a thin film semiconductor device, a thin film transistor, and the like. Possible membrane materials are possible.
[0047]
Further, the modification of the film body to be treated in the present invention is not particularly specified. For example, annealing treatment for the film material, heat treatment for crystallizing the non-crystallized portion, resin A component curing process or a melting process, a modification process for a resist, and the like can be considered.
[0048]
Here, a specific example of the film body part reforming apparatus 100 and the film body part reforming method according to the present invention is a semiconductor film in which the film body part to be processed is formed on the substrate 4 and the amorphous silicon component. The case where a part is modified to crystallized silicon will be described in detail below.
[0049]
That is, FIG. 2 is a plan view for explaining a specific example of the film body portion reforming operation in the film body portion reforming apparatus 100 according to the present invention shown in FIG.
[0050]
In a specific example of the present invention described below, a substrate 4 with a semiconductor film 2 is disposed on a substrate moving means 1 called a substrate stage.
[0051]
The substrate moving means 1 which is the substrate stage is composed of a conventionally known X stage and Y stage. As a result, the substrate 4 on which the film body 2 to be processed is mounted can be arbitrarily placed on the XY plane. It is possible to move in the direction of
[0052]
The operation speed of the XY stage is, for example, 100 mm / sec, and the position accuracy is 1 μm.
[0053]
On the other hand, in the optical path moving unit 3, the laser irradiation range 31 of the shaped light beam 25 is basically applied to the movable range of the optical path moving unit 3 and the surface of the mask pattern 8. This is limited by the cross-sectional area of the light beam 20 emitted from the light source 10, and here, the irradiation range irradiated on the surface of the laser mask 8 is shown.
[0054]
The laser crystallization region 32 is a portion that has already been crystallized after laser irradiation. Further, in this specific example, the laser light source 10 is configured separately from the film body portion reforming apparatus 100, and the light beam 20 emitted from the light source 10 is sent to an appropriate laser introduction window (not shown). The substrate 4 can be placed in a vacuum chamber (not shown) by introducing it into a predetermined part of the film body to be processed through
[0055]
On the other hand, the mask pattern 8 in this specific example is operated with a positional accuracy of 0.5 microns in the mask stage operation direction, for example, the Y direction shown in FIG. 2, by the mask stage constituting the optical path moving means 3.
[0056]
As shown in FIG. 2B, after the substrate is arranged at a desired position by the XY stage operation that constitutes the substrate moving means 1, the optical path moving means 3 including the mask stage moves in the Y direction, and at the same time. The laser oscillates continuously.
[0057]
By operating the mask moving stage constituting the optical path moving unit 3 at 150 μm / sec and the laser light source at 300 Hz, the laser beam is desired for the target film body portion mounted on the substrate every 0.5 μm step. The surface of the area is irradiated.
[0058]
The above operation will be described with reference to the side view of FIG.
[0059]
  That is, the laser beam 25, 25 ′ formed on the substrate 4 with the semiconductor film 2 is irradiated to form a laser crystallization region.32Is formed.
[0060]
  The laser beams 25 and 25 ′ are irradiated with the laser beam 20 emitted from the laser light source 10 in the laser irradiation range 31 on the laser mask corresponding to the mask pattern 8, and as a result, the mask stage having the mask pattern 8. That is, any one of the desired mask patterns 91 to 94 passes through a desired portion in the film body 2 to be processed by the movement operation of the optical path moving means 3 in a predetermined direction.TeseiOne or a plurality of shaped laser beams 25 are irradiated.
[0061]
FIG. 3 is a diagram showing the configuration of another specific example of the present invention.
[0062]
That is, the pulsed UV light supplied from the first excimer laser EL1 and the second excimer laser EL2 is guided to the homogenizer 41 via the mirrors 34, 35, and 36, respectively.
[0063]
Here, the intensity profile of the beam is shaped so as to have a desired uniformity, for example, in-plane distribution ± 5%, in the optical mask 39 corresponding to the mask pattern 8 in the optical path moving means 3 described above. .
[0064]
In addition, since the intensity profile and the total energy amount of the original beam 20 supplied from the excimer lasers EL1 and EL2 may change between pulses, the intensity on the optical mask which is the mask pattern 8 is It is desirable to provide a mechanism for making the spatial distribution and variation between pulses more uniform.
[0065]
As the homogenizer 41, one using a fly-eye lens or a cylindrical lens is generally used.
[0066]
The light beam 20 output from the homogenizer 41 is applied to the optical mask 39 that is the mask pattern 8 via the mirror 37 and the optical lens 38.
[0067]
The light beam 25 formed by the optical mask 39 passes through the reduction projection exposure apparatus 40, and, for example, the surface of the substrate 4 installed in the vacuum chamber 43 via the laser introduction window 42 provided in the vacuum chamber 43. The desired portion of the film body 2 to be processed mounted on is irradiated.
[0068]
The substrate 4 is placed on an appropriate substrate moving means 1, and the substrate moving means 1 constitutes an XY table, and an arbitrary part of the processed film body portion 2 is formed. It is configured so that it can be moved to the irradiation position of the light beam 25.
[0069]
That is, the formed light beam can be exposed to a desired region of the film body 2 to be processed, for example, the pattern transfer region 30 by the operation of the substrate stage including the substrate moving unit 1.
[0070]
In this specific example shown in FIG. 3, the light beam 25 formed by the mask pattern 8 is reduced by using the reduction projection optical system 40, and the pattern of the reduced light beam 25 is changed to the processed film body portion 2. However, depending on the case, the pattern of the light beam 25 may be projected at the same magnification or enlarged.
[0071]
That is, in this specific example, in the film body portion 2 to be processed provided on the substrate 4 by the movement of the substrate moving means 1 which is a substrate stage (X and Y directions in FIG. 3). It is possible to irradiate the light beam 25 to an arbitrary region 30.
[0072]
Further, the mask pattern 8 constituting the optical mask 39 is placed on a mask stage (not shown) constituting the optical path moving means 3 and within the exposure possible region of the light beam 20 output from the light source. For example, the optical mask 39 can be moved as appropriate to operate the light beam 25 that is applied to any part of the target film body portion 2 provided on the substrate.
[0073]
Next, an example of a mechanism necessary for irradiating a desired light pattern 25 to an arbitrary part of the target film body portion 2 provided on the substrate under desired conditions will be described.
[0074]
Since the adjustment of the optical axis requires delicate adjustment, the optical axis that has been adjusted once is fixed, and the substrate side, that is, the substrate moving means 1 is moved so that the desired position of the film body to be processed is determined. It is desirable to adjust so as to correspond to the irradiation position of the light beam 25. In this specific example, a specific example of the adjustment method will be shown.
[0075]
That is, the position of the surface portion of the film body 2 to be processed with respect to the optical axis needs to correct the focus (Z) direction position and the perpendicularity to the optical axis.
[0076]
Therefore, in FIG. 3, the θxy inclination correction direction, the θxz inclination correction direction, the θyz inclination correction direction, the x exposure area movement direction, the y exposure area movement direction, and the z focusing direction are indicated by the θxy inclination correction direction and the θxz inclination correction direction. , Θyz inclination correction direction is adjusted to correct the perpendicularity to the optical axis.
[0077]
Further, by adjusting the z focusing direction, the substrate irradiation surface is arranged and controlled at a position corresponding to the focal depth of the optical system.
[0078]
FIG. 4 is a side view showing the configuration of an example of the above adjustment and substrate alignment mechanism.
[0079]
In the figure, an optical mask 39 corresponding to the mask pattern 8, a reduced projection exposure apparatus 40, and a laser introduction window 42 are arranged as shown in the figure with respect to the exposure axis LO.
[0080]
Further, the substrate 4 on which the film body 2 to be processed disposed in the vacuum chamber 43 is disposed on the θxyθxzθyz stage constituting the substrate moving means 1 having a heater with a substrate suction mechanism and the like.
[0081]
In this specific example, the vacuum chamber 43 is used, but actual light irradiation is preferably performed in an atmosphere of a substituted inert gas, hydrogen, oxygen, nitrogen or the like after evacuation. The pressure may be a pressure around atmospheric pressure.
[0082]
In this specific example, by using a heater with a substrate adsorption mechanism, substrate heating conditions of about room temperature to about 400 ° C. can be selected during light irradiation.
[0083]
  as mentioned above,Atmospheric pressureSince the substrate can be adsorbed by the vacuum chuck function by setting the pressure to about atmospheric pressure, the displacement can be prevented even if the substrate stage moves in the chamber, etc., and there is some warping and deflection of the loaded substrate. Can be fixed to the substrate stage. Further, it is possible to minimize the depth of focus shift due to the warp or deflection of the substrate due to heating.
[0084]
In this specific example, 44 and 45 are laser interferometers, and 46 is a measuring window.
[0085]
In this specific example, by providing a length measuring mirror 47 on the side surface of the end of the substrate 4, the alignment of the substrate 4 and the measurement of the position of the substrate 4 in the Z direction can be performed.
[0086]
On the other hand, in this specific example, when alignment is performed, the alignment mark 5 on the substrate 4 is measured using, for example, an off-axis microscope 48, a microscope light source 49, and a microscope element 50, and laser interference is performed. A desired exposure position can be measured using the substrate position information obtained by the total 44 or 45.
[0087]
In this specific example, the off-axis method is exemplified as an example of executing the alignment. However, the through-the-lens (Through The Mask) method and the through-the-mask (Through The Mask (Reticle)) method are applied. It is also possible to do.
[0088]
Further, by determining linear coordinates from a plurality of measurement points using the least square method, it is possible to take means for averaging measurement errors that occur during measurement.
[0089]
Further, as described above, the relationship between the mask pattern 8 and the alignment marks 95 and 96 is shown in FIGS.
[0090]
That is, in the mask pattern 8 used in this specific example, the mask portion is composed of a non-exposed portion 81 and an exposed portion 82. For example, when an excimer laser is used as a light source, a film that absorbs and reflects ultraviolet light such as a metal such as aluminum, chromium, and tungsten or a dielectric multilayer film is formed on a quartz substrate that transmits ultraviolet light, and photolithography and etching. A pattern is formed using a technique.
[0091]
A silicon film, which is an example of the film body 2 to be processed, is exposed in accordance with a desired selected pattern (indicated by a white portion in FIG. 5A) 91 to 94 on the mask pattern 8 as shown in FIG. ), Exposed silicon 82 ′ is formed in non-exposed silicon 81 ′.
[0092]
At this time, if necessary, the alignment mark formations 95 and 96 provided on the mask pattern 8 are exposed after alignment adjustment so that the alignment marks 5 and 96 provided on the substrate 4 coincide with the silicon thin film. It is possible to expose the above pre-designed position.
[0093]
Further, in the thin film transistor forming process using the silicon thin film, when the exposure process is the first process that requires positioning (that is, when the alignment mark is not formed in advance), the exposure forming mark is used during the silicon thin film exposure process. By exposing 95 or 96 simultaneously, an alignment mark 82 ′ using an optical color difference between amorphous silicon a-Si and crystalline Si can be formed.
[0094]
Therefore, by performing photolithography or the like in a later process with reference to the alignment mark 82 ', a transistor, a desired mechanism, and a function can be formed in a desired region that has been modified by exposure.
[0095]
FIG. 5C and a cross-sectional view taken along the line A-A show a state where a Si oxide film is formed on the silicon thin film after the exposure process and a desired region of the silicon layer is removed by etching.
[0096]
The silicon removal portion 85 is a region where the laminated silicon film and the silicon oxide film are removed by etching, and shows a shape in which silicon oxide films 86 and 87 are laminated on the non-exposed silicon 81 ′ and the exposed silicon 82 ′. ing.
[0097]
In this manner, by forming an island-shaped structure made of a silicon film covered with an oxide film, it is possible to form channel / source / drain regions of thin film transistors separated between elements and marks necessary for alignment in subsequent processes. it can.
[0098]
6A and 6B are timing charts of main operations in the film body portion reforming method in the present specific example.
[0099]
That is, in the control example 1 in FIG. 6A, the desired portion of the film body 2 to be processed mounted on the substrate 4 is moved to the desired exposure position by the operation of the substrate moving means 1 constituting the substrate stage. .
[0100]
Next, focusing and alignment operations are performed to precisely adjust the exposure position. At this time, for example, adjustment is made so as to fall within a desired setting error accuracy such as about 0.1 μm to 100 μm.
[0101]
When the operation is completed, light irradiation is performed on the target film body 2 mounted on the substrate 4.
[0102]
When these series of operations are completed, the substrate moves to the next exposure region, and after the necessary portions of the film body 2 to be processed mounted on the substrate are further irradiated, the substrate 4 is replaced. Then, a predetermined series of processing is performed on the target film body portion 2 provided on the second processing substrate 4.
[0103]
In the control example 2 of the film body portion modification method according to the present invention shown in FIG. 6B, the substrate is moved to a desired exposure position by the operation of the substrate stage 1.
[0104]
Next, focusing and alignment operations are performed to precisely adjust the exposure position. At this time, for example, adjustment is made so as to fall within a desired setting error accuracy such as about 0.1 μm to 100 μm.
[0105]
When the operation is completed, the operation of the optical path moving means 3 that is a mask stage is started.
[0106]
In order to avoid variations in the amount of movement steps at the start of the optical path moving means 3, the light irradiation onto the substrate is a chart that starts after the start of the mask stage operation.
[0107]
Of course, since exposure is performed at a point away from the alignment position due to the movement of the stage, it is needless to say that the amount of offset needs to be considered in advance.
In the present invention, the light source is started earlier than the light irradiation to the target film body portion 2 mounted on the substrate, and when the stability of the output intensity of the light source 10 is increased, It is also possible to irradiate the substrate 4 with light by opening a shutter or the like.
[0108]
In particular, when an excimer laser is used as a light source and a usage method in which an oscillation period and a stop period are repeated, it is known that the initial several tens of pulses are particularly unstable. When it is not desired to irradiate the beam, a method of blocking the beam in accordance with the operation of the mask stage can be adopted.
[0109]
When these series of operations are completed, the substrate moves to the next exposure region, and after the necessary portions of the target film body portion 2 on the substrate 4 are irradiated, the substrate is replaced and the second is changed. A predetermined series of processing is performed on the processing substrate 4.
[0110]
An a-Si thin film having a thickness of 75 nm was scanned with a 1 mm × 50 μm beam at a 0.5 μm pitch in the minor axis direction.
[0111]
Using one light source 10, the laser irradiation intensity is 470 mJ / cm on the irradiated surface.² As a result, a single crystal silicon thin film continuous in the scanning direction was obtained.
[0112]
Furthermore, the second light source is 150 mJ / cm at the irradiated surface.² Thus, a single crystal silicon thin film continuous in the scanning direction was obtained even under a scanning pitch condition of 1.0 μm under the condition of irradiation with a delay of 100 nsec.
[0113]
The trap state density in the crystallized silicon film is 10¹²cm^-2It showed a lower value.
[0114]
FIG. 7 is a side view of a semiconductor thin film forming apparatus showing an embodiment of the present invention.
[0115]
That is, in the drawing, it is composed of a plasma CVD chamber 70, a laser irradiation chamber 71, and a substrate transfer chamber 72, and the transfer of the substrate 4 via the gate valves 73 and 74 is performed in an inert gas in a vacuum without touching the atmosphere outside the apparatus. , In an atmosphere of nitrogen, hydrogen, oxygen, etc. and in a high vacuum, reduced pressure, or pressurized state.
[0116]
In the laser irradiation chamber 71, the substrate 4 is installed on the substrate stage 1 constituting the substrate moving unit 1 that can be heated to about 400 ° C. using an appropriate chuck mechanism. Further, a desired film body 2 to be processed is disposed on the surface of the substrate 4.
[0117]
In the plasma CVD chamber 70, the substrate 4 having the film body 2 to be processed is placed on the substrate holder 75 that can be heated to about 400 ° C.
[0118]
In this example, the silicon thin film 2 is formed on the glass substrate 4 and introduced into the laser irradiation chamber 71, and the silicon thin film 2 on the surface is reformed into a crystalline silicon thin film by laser irradiation and is transferred to the plasma CVD chamber 70. Shows the state.
[0119]
  The laser beam 25 introduced into the laser irradiation chamber 71 is transmitted through the mirror 77 through the first beam line L1 and the second beam line L2 of the beam 20 supplied from the excimer laser EL1 or the excimer laser EL2. A laser irradiation optical device comprising a laser synthesizing optical device 76 having a mirror 78, a homogenizer 79, an optical mask 80 fixed to the optical path moving means 3 constituting the optical mask stage, and a projection optical device 182.83After passing through, a desired part of the target film body portion 2 on the substrate surface is reached via the laser introduction window 84.
[0120]
Although two excimer lasers are illustrated here, one or more desired light sources 10 can be installed. In addition to the excimer laser, a pulse laser such as a carbon dioxide laser or a YAG laser, or a CW light source such as an argon laser and a high-speed shutter may be used to supply the pulse.
[0121]
On the other hand, in the plasma CVD chamber 70, a plasma formation region 186 formed by the RF electrode 185 and the plasma confinement electrode 187 is formed at a position away from the region where the substrate 4 is disposed.
[0122]
In the plasma formation region 186, for example, a silicon oxide film can be formed on the substrate 4 by supplying oxygen and helium with silane gas using the source gas introduction device 188.
[0123]
FIG. 8 is a plan view of a semiconductor thin film forming apparatus 200 showing an embodiment of the present invention.
[0124]
In the figure, a load / unload chamber 89, a plasma CVD chamber 90, a substrate heating chamber 191, a hydrogen plasma processing chamber 192, a laser irradiation chamber 193, and a substrate transfer chamber 194 are connected through gate valves GV1 to GV6, respectively.
[0125]
  The laser beams 10 and 10 ′ supplied individually from the first beam line L 1 and the second beam line L 2 are a laser combining optical device 195, a laser irradiation optical device 196, and a laser introduction window.84Then, the surface of the film body 2 to be processed provided on the substrate 4 is irradiated.
[0126]
  Also, each process chamber and transfer chamber is a gas introduction device97-1 to 97-7, Exhaust systemVent1 to Vent7Are connected, and supply of desired gas species, setting of process pressure, exhaust, and vacuum are adjusted.
[0127]
In FIG. 8, the processing substrates 4-2 and 4-6 are arranged on a plane as indicated by dotted lines.
[0128]
FIG. 9 is a schematic view showing a configuration of an example of a plasma CVD chamber 70 used in the present invention.
[0129]
That is, power is supplied to the high-frequency electrode 102 from a high-frequency power source 101 that preferably uses a high frequency of 13.56 MHz or higher. As a result, plasma is formed between the electrode 103 with the gas supply hole and the high-frequency electrode 102, and the radical formed by the reaction passes through the electrode 103 with the gas supply hole and is guided to the region where the substrate 4 is disposed.
[0130]
On the other hand, another gas is introduced by the planar gas introduction device 104 without being exposed to plasma, and the thin film 2 is formed on the substrate 4 through a gas phase reaction.
[0131]
The substrate holder 1 that supports the substrate 4 and corresponds to the substrate moving means was designed to be heated from room temperature to about 500 ° C. by a heater or the like.
[0132]
  As shown, an exhaust device 105, a gas introduction device 106, an oxygen line 107, a helium line 108, and a hydrogen line 109.,The silicon oxide film 2 can be formed by reacting oxygen radicals and silane gas using the silane line 110, the helium line 111, the argon line 112, and the like.
[0133]
The film formation conditions in this specific example are as follows: when the film was formed under conditions of a substrate temperature of 300 ° C., a pressure of 0.1 torr, an RF power of 100 W, a silane flow rate of 10 sccm, an oxygen flow rate of 400 sccm, and a helium flow rate of 400 sccm, the fixed oxide film charge Density (5 × 10¹¹cm^-2And the formation of a silicon oxide film having good characteristics.
[0134]
Further, a better oxide film can be formed by increasing the ratio of oxygen flow rate to silane.
[0135]
As a form of the plasma CVD chamber 70, not only the parallel plate type RF plasma CVD apparatus as described above but also a method not using plasma such as low pressure CVD or atmospheric pressure CVD, a microwave or an ECR (Electron Cycrotron Resonance) effect is used. It is also possible to use the conventional plasma CVD method.
[0136]
The following raw materials can be used as gas species necessary when the plasma CVD apparatus 70 shown in FIG. 9 is used for forming a thin film other than a silicon oxide film.
[0137]
For example, Si₃ N₄ N is used to form a silicon nitride film.₂ (Nitrogen) (or ammonia), Ar (argon), SiH as carrier gas₄ (Silane), argon or the like can be used as a carrier gas.
[0138]
In addition, the silicon thin film is formed by hydrogen and silane, hydrogen (argon as a carrier gas) and SiF.₄ A source gas such as tetrafluorosilane (argon as a carrier gas) can be used. Although not a film formation process, hydrogen plasma treatment of a silicon thin film or a silicon oxide film is also possible using hydrogen plasma.
[0139]
FIG. 10 illustrates a specific example in which an alignment mark is provided in advance and laser irradiation corresponding to the alignment mark is performed when manufacturing a TFT in the present invention, based on the TFT manufacturing process flow.
[0140]
As shown in FIG. 10A, first, a substrate cover film 121 and a silicon thin film 2 are sequentially formed on a glass substrate 4 from which organic substances, metals, fine particles and the like have been removed by cleaning.
[0141]
As the substrate cover film 121, a silicon oxide film having a thickness of 1 μm is formed at 450 ° C. using silane and oxygen gas as raw materials by LPCVD (low pressure chemical vapor deposition).
[0142]
By using the LPCVD method, it is possible to cover the entire outer surface of the substrate except for the substrate holding region (not shown).
[0143]
Alternatively, plasma CVD using tetraethoxysilane (TEOS) and oxygen as raw materials, atmospheric pressure CVD using TEOS and ozone as raw materials, plasma CVD as shown in FIG. 8, and the like can be used. A material capable of preventing diffusion of impurities harmful to semiconductor devices including glass whose metal concentration is reduced as much as possible, quartz / glass whose surface is polished, and the like is effective as the substrate cover film.
[0144]
The silicon thin film is formed by LPCVD using disilane gas as a raw material at 500 ° C. and a thickness of 75 nm. In this case, since the concentration of hydrogen atoms contained in the film is 1 atomic% or less, film roughness due to hydrogen release in the laser irradiation process can be prevented.
[0145]
Alternatively, even if a plasma CVD method as shown in FIG. 7 or a widely used plasma CVD method is used, hydrogen atoms can be adjusted by adjusting the substrate temperature, the hydrogen / silane flow rate ratio, the hydrogen / 4 fluorinated silane flow rate ratio, or the like. A silicon thin film 2 having a low concentration can be formed.
Further, in order to form an alignment mark, the alignment mark 129 is formed on the substrate 4 by patterning by photolithography and etching.
[0146]
Next, a mark protective film 130 is formed to protect the alignment mark 129, and the silicon thin film 2 is formed.
[0147]
Subsequently, as shown in FIG. 10 (b), the substrate 4 prepared in the process of FIG. 10 (a) is subjected to a cleaning process for removing organic substances, metals, fine particles, surface oxide film, and the like. The thin film forming apparatus illustrated in FIG. 9 according to the present invention is introduced.
[0148]
Irradiation with laser light LO modifies the silicon thin film 2 into a crystallized silicon thin film 2 '. Laser crystallization is performed in an atmosphere of high purity nitrogen of 700. Torr of 99.9999% or more, and oxygen gas is introduced after completion of laser irradiation.
[0149]
At the time of laser light exposure, a desired area is exposed with reference to the alignment mark 129. Thereafter, the alignment of the next process can be performed based on the alignment mark 129 provided in advance or an alignment mark (not shown) formed by crystallized silicon thin film patterning.
[0150]
As shown in FIG. 10C, the substrate 4 that has undergone the above steps is transported to the plasma CVD chamber through the substrate transport chamber after the gas is exhausted.
[0151]
First, as the first gate insulating film 123, a silicon oxide film is deposited to a thickness of 10 nm at a substrate temperature of 350 degrees using silane, helium, and oxygen as source gases. Thereafter, hydrogen plasma treatment or heat annealing is performed as necessary. The processing up to this point is processed in the thin film forming apparatus of the present invention.
[0152]
Next, as shown in FIG. 10D, islands of the silicon thin film 2 ′ and the silicon oxide film laminated film 123 are formed using photolithography and etching techniques. At this time, it is preferable to select an etching condition in which the etching rate of the silicon oxide film 123 is higher than that of the silicon thin film 2 ′.
[0153]
As shown in the figure, a thin film transistor with high reliability can be provided by preventing gate leakage by forming the pattern cross section in a step shape (or taper shape).
[0154]
Next, as shown in FIG. 10E, after cleaning for removing organic substances, metals, fine particles, and the like, a second gate insulating film 124 is formed so as to cover the island. Here, a silane and oxygen gas were used as raw materials by LPCVD, and a silicon oxide film was formed to a thickness of 30 nm at 450 ° C.
[0155]
Alternatively, it is also possible to use plasma CVD using TEOS and oxygen as raw materials, atmospheric pressure CVD using TEOS and ozone as raw materials, plasma CVD as shown in FIG.
[0156]
Next, n as a gate electrode⁺ A silicon film is formed to 80 nm and a tungsten silicide film is formed to 110 nm.
[0157]
n⁺ The silicon film is preferably a crystalline phosphorus-doped silicon film formed by plasma CVD or LPCVD. Thereafter, a patterned gate electrode 125 is formed through photolithography and etching processes.
[0158]
Next, as shown in FIGS. 10F and 10G, impurities are implanted using the gate as a mask to form impurity implantation regions 126 and 126 '.
[0159]
That is, in the case of forming a CMOS type circuit, n is shown in FIG.⁺ An n-channel TFT that requires a region and p shown in FIG.⁺ A p-channel TFT that requires a region is separately formed.
[0160]
Methods such as ion doping that does not perform mass separation of implanted impurity ions, ion implantation, plasma doping, and laser doping can be employed. At that time, as shown in FIGS. 10 (f) and 10 (g), impurities are introduced while leaving or removing the silicon oxide film on the surface, depending on the application and impurity introduction method.
[0161]
Thereafter, as shown in FIGS. 10 (h) and 10 (i), interlayer isolation insulating films 127 and 127 ′ are individually deposited, contact holes are opened, metal is deposited, and metal wiring is formed by photolithography and etching. 128 is formed.
[0162]
As the interlayer isolation insulating films 127 and 127 ′, a TEOS-based oxide film, a silica-based coating film, or an organic coating film that can be flattened can be used.
[0163]
The contact hole opening can be applied by photolithography and etching, and the metal wiring can be applied with a low-resistance aluminum, copper, an alloy based on them, or a high melting point metal such as tungsten or molybdenum. By performing the above steps, a thin film transistor with high performance and reliability can be formed.
[0164]
  As is clear from the configuration of each specific example described above, in the film body portion reforming apparatus 100 according to the present invention, the desired path in the optical path moving means 3 is obtained.Shaped light beam 25And the alignment operation of the substrate moving unit 1 with the desired portion 30 to be processed are performed with reference to the alignment marks 5 and 129 provided on the substrate 4. It is what is done.
[0165]
  More specifically, the desired path in the optical path moving means 3 in the present invention.Shaped light beam 25And the substrate moving means 1 are aligned with the desired portion 30 of the film body 2 to be processed by the alignment marks 5 and 129 provided on the substrate 4 and the optical path moving means. 3 is controlled so as to coincide with the alignment mark detecting means provided in 3, for example, the opening 97.
[0166]
As a method for aligning the film body 2 to be processed 2 on the substrate 4 and the optical path moving means 3 using the alignment mark in the present invention, a known method can be used, for example, Image recognition means, secondary electron detection means, laser interferometer, and the like can be used.
[0167]
  In order to execute such control, in the film body portion reforming apparatus 100 according to the present invention, as shown in FIG. 1A, the film body portion 2 to be processed mounted on the substrate 4 is applied. In order to direct a shaped light beam 25 having a desired shape to a desired portion 30 in the film body 2 to be processed in order to modify the desired portion in the mask pattern 8, the desired pattern is changed from the mask pattern 8. Pattern selection control means to select58In order to move the desired portion 30 in the film body 2 to be processed into the movement range region of the optical path by the shaped light beam 25 shaped using the selected mask pattern, the substrate 4 The first irradiation position control means 40 for moving the optical path to the desired position, and the second irradiation position control means for moving the optical path moving means 3 to the desired position while referring to the alignment mark 5 formed on the substrate 4 50. Detection means 6 for determining whether or not the alignment mark 5 formed on the substrate 4 and the alignment mark detection means 97 formed in the mask pattern 8 of the optical path moving means 3 match, the light source It is desirable to have a control means 66 composed of a light source drive control means 60 for driving 10 and a control calculation means 65 for comprehensively controlling each of the above means.
[0168]
The alignment mark 5 or 129 formed on the substrate 4 in the present invention may be previously formed on the substrate, or the alignment mark pattern in the mask pattern 8. 97 may be formed during the processing operation of the film body part 2 to be processed.
[0169]
The film body to be processed in the present invention is, for example, non-crystallized silicon, and is processed so as to obtain crystallized silicon after modification.
[0170]
  In the film body portion modification method according to another aspect of the present invention, the light source 10 and the light beam 20 emitted from the light source are formed into a desired shape, and the shaped light beam is formed. The optical path moving means 3 for directing 25 in a desired direction and the substrate 4 including the processed film body portion 2 are mounted, and the desired site of the processed film body portion 2 isShaped light beam 25The film body portion reforming apparatus 100 is configured to be movable so as to correspond to the above, and the operation accuracy of the optical path moving unit 3 is higher than the operation accuracy of the substrate moving unit 1. It is desirable that the film body portion to be processed be modified so as to be higher.
[0171]
In the film body portion modification method of the present invention, it is preferable that the moving range of the optical path moving unit 3 is set to be narrower than the moving range of the substrate moving unit 1.
[0172]
Furthermore, it is desirable to set the moving speed of the optical path moving means 3 to be slower than the moving speed of the substrate moving means 1.
[0173]
The optical path moving means 3 and the substrate moving means 1 are configured to be moved in the same direction or in the opposite directions to each other, and the optical path moving means 3 and the substrate moving means 1 are moved simultaneously with each other. Alternatively, it may be configured to be controlled to move individually.
[0174]
The optical path moving means 3 includes one or a plurality of mask patterns for forming one or a plurality of types of shaped light beams 25 having a cross-sectional area smaller than that of the light beam 20 emitted from the light source 10. The mask pattern 8 also preferably includes an alignment mark forming mask pattern 97 or an alignment mark detection opening.
[0175]
  In the present invention, the desired path in the optical path moving means 3 is obtained.Shaped light beam 25And the substrate moving means 1 are aligned with the desired portion 5 of the film body 2 to be processed by the alignment mark 5 and the optical path moving means 3 provided on the substrate 4. Control is performed so that the provided alignment mark or alignment mark detecting means 97 is matched.
[0176]
In the film body portion reforming method according to the present invention, as described above, the film body portion reforming apparatus includes a control means, and the control means is a film body to be processed mounted on the substrate. A desired pattern is selected from the mask pattern in order to direct a shaped light beam having a desired shape to a desired portion in the film body to be processed in order to modify a desired portion in the portion. In order to move a desired part in the film body to be processed into a moving range region of an optical path by a shaped light beam formed using the selected mask pattern, a pattern selecting step, Preferably, a step of moving the optical path moving means to a desired position while referring to an alignment mark formed on the substrate, and a step of driving the light source. Better .
[0177]
【The invention's effect】
Since the film body part reforming apparatus and the film body part reforming method according to the present invention employ the technical configuration as described above, for example, a desired size and area of a wiring part or the like in a semiconductor device. It is possible to efficiently and easily modify the film body portion made of a chemical substance in the portion having the above so as to have desired characteristics.
[0178]
In particular, in the film body portion reforming apparatus according to the present invention, even when used for manufacturing a large area device such as a liquid crystal display, a stage having high operation accuracy and a stage requiring high speed operation are compatible. By realizing the above, it is possible to provide a semiconductor thin film manufacturing apparatus with high throughput.
[0179]
By aligning the beam using the alignment function to the mark formed on the substrate on which the silicon film is deposited, it becomes possible to expose a desired region with a positional accuracy of the order of μm or more. It was.
[Brief description of the drawings]
FIG. 1 is a block diagram illustrating the configuration of a specific example of a film body reforming apparatus according to the present invention.
FIG. 2 is a plan view for explaining an example of operation in a specific example of the film body portion reforming apparatus according to the present invention.
FIG. 3 is a perspective view for explaining the outline of the configuration of a specific example of the film body portion reforming apparatus according to the present invention.
FIG. 4 is a block diagram illustrating a specific example of an alignment mechanism in the film body portion reforming apparatus according to the present invention.
FIG. 5 is a diagram for explaining an example of a mask pattern used in the film body portion reforming apparatus of the present invention and a method of using the mask pattern.
FIG. 6 is a timing chart for explaining a specific example of control in the film body portion reforming method according to the present invention.
FIG. 7 is a side sectional view showing the configuration of a specific example of a semiconductor thin film forming apparatus, a transfer chamber, and a plasma CVD chamber used in association with the film body portion reforming apparatus of the present invention.
FIG. 8 is a plan view for explaining arrangement states of a semiconductor thin film forming apparatus, a transfer chamber, a plasma CVD chamber, and the like used in association with the film body portion reforming apparatus of the present invention.
FIG. 9 is a side sectional view showing a configuration of an example of a plasma CVD chamber used in association with the film body portion reforming apparatus of the present invention.
FIG. 10 is a diagram showing a manufacturing process procedure when the film body reforming method according to the present invention is applied to a TFT manufacturing process;
FIG. 11 is a plan view for explaining an example of a conventional excimer laser annealing apparatus.
FIG. 12 is a diagram for explaining the operation of a conventional excimer laser annealing apparatus;
[Explanation of symbols]
1. Optical path moving means
2 ... Film body to be processed
2 '... Modified thin film
4 ... Board
5, 129 ... Alignment mark
6. Alignment mark detection means
8 ... Mask pattern
100 ... Membrane reformer
10 ... Light source
20. Light beam
21 ... Operating range of optical path moving means
25, 25 '... shaped light beam
26 ... Optical path
30 ... Desired part of film body to be processed, pattern transfer region
31 ... Laser irradiation range
34, 35, 36, 37 ... Mirror
38 ... Optical lens
39 ... Optical mask
40. Reduced projection exposure apparatus
41. Homogenizer
42 ... Laser introduction window
43 ... Vacuum chamber
44, 45 ... Laser interferometer
46 ... Measuring window 47 ... Measuring mirror
48 ... Off-axis microscope
49 ... Light source for microscope
50 ... Elements for microscope
70, 90 ... Plasma CVD chamber
71 ... Laser irradiation chamber
72. Substrate transfer chamber
73, 74 ... Gate valve
75 ... Board holder
76 ... Laser synthesis optical device
77 ... Mirror
78 ... Transmission mirror
79 ... Homogenizer
80 ... Optical mask
81 ... non-exposed part
81 '... non-exposed silicon
82 ... Exposure section
82 '... exposed silicon
83 '... Alignment mark
84 ... Laser introduction window
85 ... Silicon removal part
86, 87 ... silicon oxide film
89 ... Load / Unload room
91 ... Slit-shaped opening
92 ... Diagonal short slit opening
93 ... A bowl-shaped opening
94 ... Annular opening
95, 96 ... Slit opening for alignment mark formation
97 ... Alignment mark detection opening
101 ... High frequency power supply
102 ... High frequency electrode
103 ... Electrode with gas supply hole
104 ... Planar gas introduction device
105 ... Exhaust system
106 ... Gas introduction device
107 ... Oxygen line
108 ... Helium line
109 ... Hydrogen line
110 ... Silane line
111 ... Helium line
112 ... Argon line
121 ... Board cover film
123 ... Silicon oxide film laminated film
124 ... Gate insulating film
125 ... Gate electrode
126, 126 '... impurity implantation region
127 ... interlayer isolation insulating film
128 ... metal wiring
130 ... Mark protective film
182. Projection optical apparatus
  83... Laser irradiation optical device
185 ... RF electrode
187 ... Plasma confinement electrode
186 ... Plasma formation region
188 ... Raw material gas introduction device
191 ... Substrate heating chamber
192 ... Hydrogen plasma treatment room
193 ... Laser irradiation chamber
194 ... Board transfer chamber
195 ... Laser synthesis optical device
196 ... Laser irradiation optical device
97-1 to 97-7... gas introduction device
Vent1 to Vent7... exhaustPlace
200 ... Semiconductor thin film forming equipment
1101 ... Silicon thin film
1102 ... Linear beam irradiation range
1103 ... Crystallization region
1104 ... Laser introduction window

Claims (14)

A light source, a light beam emitted from the light source is shaped into a desired shape, an optical path moving means for directing the shaped light beam in a desired direction, and a substrate including a film body to be processed are mounted, A film body portion reforming apparatus comprising a substrate moving means configured to be movable so as to correspond a desired portion of a film body to be processed to the shaped light beam . The operation accuracy is configured to be higher than the operation accuracy of the substrate moving unit, and the optical path moving unit is formed of a plurality of types having a cross-sectional area smaller than the cross-sectional area of the light beam emitted from the light source. It has a plurality of mask patterns for forming a light beam, and the mask pattern in the optical path moving means includes a mask pattern for forming an alignment mark. Stomach,
The film body to be processed is non-crystallized silicon, and crystallized silicon is obtained after modification,
The film body part reforming apparatus includes a control unit, and the control unit is a molding having a desired shape so as to reform a desired part of the film body part to be processed mounted on the substrate. In order to direct the light beam to a desired site in the film body to be processed, pattern selection control means for selecting a desired pattern from the plurality of mask patterns and the selected mask pattern are used. First irradiation position control means for moving the substrate to a desired position in order to move a desired part in the film body to be processed within the movement range region of the optical path by the shaped light beam thus formed. A second irradiation position control means for moving the optical path moving means to a desired position while referring to an alignment mark formed on the substrate, and a light source drive control means for driving the light source. And,
By the control unit, and moving the desired site of the target film body mounted on the substrate to a desired irradiation position, and adjusting the irradiation position subjected to alignment operation, it mounted on the substrate the film body unit reformer, characterized in that you sequentially and a step of light irradiation to the target film body.   2. The film body portion reforming apparatus according to claim 1, wherein the moving range of the optical path moving unit is configured to be narrower than the moving range of the substrate moving unit.   3. The film body portion reforming apparatus according to claim 1, wherein the moving speed of the optical path moving unit is configured to be slower than the moving speed of the substrate moving unit.   4. The film body portion reforming apparatus according to claim 1, wherein the optical path moving unit and the substrate moving unit are configured to be movable in the same direction or in opposite directions to each other.   5. The film body portion modification according to claim 1, wherein the optical path moving means and the substrate moving means are controlled to move simultaneously with each other or individually. Quality equipment. A light source, a light beam emitted from the light source is shaped into a desired shape, an optical path moving means for directing the shaped light beam in a desired direction, and a substrate including a film body to be processed are mounted, A film body portion reforming apparatus comprising a substrate moving means configured to be movable so as to correspond a desired portion of a film body to be processed to the shaped light beam . The operation accuracy is configured to be higher than the operation accuracy of the substrate moving unit, and the optical path moving unit is formed of a plurality of types having a cross-sectional area smaller than the cross-sectional area of the light beam emitted from the light source. It has a plurality of mask patterns for forming a light beam, and the mask pattern in the optical path moving means includes a mask pattern for forming an alignment mark. Stomach,
The film body to be processed is non-crystallized silicon, and crystallized silicon is obtained after modification,
The film body part reforming apparatus includes a control unit, and the control unit is a molding having a desired shape so as to reform a desired part of the film body part to be processed mounted on the substrate. In order to direct the light beam to a desired site in the film body to be processed, pattern selection control means for selecting a desired pattern from the plurality of mask patterns and the selected mask pattern are used. First irradiation position control means for moving the substrate to a desired position in order to move a desired part in the film body to be processed within the movement range region of the optical path by the shaped light beam thus formed. A second irradiation position control means for moving the optical path moving means to a desired position while referring to an alignment mark formed on the substrate, and a light source drive control means for driving the light source. And,
By the control unit, and moving the desired site of the target film body mounted on the substrate to a desired irradiation position, and adjusting the irradiation position subjected to alignment operation, it mounted on the substrate And a step of irradiating light to the film body to be processed .
An apparatus for reforming a film body portion, characterized in that an alignment mark corresponding to an alignment mark provided on the optical path moving means is formed on the substrate. The alignment operation of the desired shaped light beam in the optical path moving means and the desired processed part of the processed film body in the substrate moving means in the alignment operation is performed on the substrate. film body reforming apparatus according to any one of claims 1 to 6 with reference to the alignment mark provided and wherein it is intended to be executed. A light source, a light beam emitted from the light source is shaped into a desired shape, an optical path moving means for directing the shaped light beam in a desired direction, and a substrate including a film body to be processed are mounted, A film body portion reforming apparatus comprising a substrate moving means configured to be movable so as to correspond a desired portion of a film body to be processed to the shaped light beam . The operation accuracy is configured to be higher than the operation accuracy of the substrate moving unit, and the optical path moving unit is formed of a plurality of types having a cross-sectional area smaller than the cross-sectional area of the light beam emitted from the light source. It has a plurality of mask patterns for forming a light beam, and the mask pattern in the optical path moving means includes a mask pattern for forming an alignment mark. Stomach,
The film body to be processed is non-crystallized silicon, and crystallized silicon is obtained after modification,
The film body part reforming apparatus includes a control unit, and the control unit is a molding having a desired shape so as to reform a desired part of the film body part to be processed mounted on the substrate. In order to direct the light beam to a desired site in the film body to be processed, pattern selection control means for selecting a desired pattern from the plurality of mask patterns and the selected mask pattern are used. First irradiation position control means for moving the substrate to a desired position in order to move a desired part in the film body to be processed within the movement range region of the optical path by the shaped light beam thus formed. A second irradiation position control means for moving the optical path moving means to a desired position while referring to an alignment mark formed on the substrate, and a light source drive control means for driving the light source. And,
By the control unit, and moving the desired site of the target film body mounted on the substrate to a desired irradiation position, and adjusting the irradiation position subjected to alignment operation, it mounted on the substrate And a step of irradiating light to the film body to be processed .
The alignment operation of the desired shaped light beam in the optical path moving means and the desired processed part of the processed film body in the substrate moving means in the alignment operation is performed on the substrate. The film body portion reforming apparatus is characterized in that the alignment mark provided on the optical path and the alignment mark provided on the optical path moving means are controlled to coincide with each other. The alignment mark formed on the substrate is formed in advance on the substrate, or the alignment mark pattern in the mask pattern is used during the processing operation of the film body to be processed. The film body part reforming apparatus according to claim 1, wherein the film body part reforming apparatus is formed. A light source including a light source is used to shape a light beam emitted from the light source into a desired shape, and the shaped light beam is directed in a desired direction to cause the substrate moving means to be a film to be processed. part mounted substrate comprising, a desired site of the target film body by moving the desired site of the target film body as allowed to correspond to the light beam the molded with the substrate moving member A film body part reforming device for reforming,
The operation accuracy of the optical path moving means is set to be higher than the operation accuracy of the substrate moving means ,
The optical path movement means includes a multi several mask patterns for forming a shaped light beam of the multi several that have a smaller cross sectional area than the cross sectional area of the light beam emitted from the light source, the optical path The mask pattern in the moving means includes a mask pattern for alignment mark formation, and the film body portion modification method using the film body portion modification apparatus includes:
In order to direct a shaped light beam having a desired shape to a desired portion in the target film body portion in order to modify a desired portion in the target film body portion mounted on the substrate. And a first step of selecting a desired pattern from the plurality of mask patterns;
The substrate is moved to a desired position in order to move a desired portion of the film body to be processed within a moving range region of an optical path by the shaped light beam formed using the selected mask pattern. A second step of
A third step of adjusting the irradiation position by moving the optical path moving means to a desired position while referring to the alignment mark formed on the substrate;
The light source is driven, and the fourth step of irradiating the target film body with light is sequentially executed .
The film body unit reforming wherein the amorphous silicon is a target film body on the substrate that that inquire break the crystallized silicon. 11. The film body portion reforming method according to claim 10 , wherein the moving range of the optical path moving unit is set to be narrower than the moving range of the substrate moving unit. The moving speed of the optical path means for moving the film body modification method according to claim 10 or 11, characterized in that setting as slower than the moving speed of the substrate moving member. The optical path moving means and said substrate moving means, the film body modification method according to any one of claims 10 to 12, characterized in that it is moved in the opposite direction the same direction or mutually with one another. The optical path moving means and said substrate moving means either move simultaneously with one another, the film body modification method according to any one of claims 10 to 13, characterized in that controlling so as allowed to move individually.

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