JP2005310581A - Plasma display panel and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a PDP which has a high drive margin of a panel and is reduced in the occurrence of display defects caused by so-called black noise at driving, while maintaining the luminous efficiency of the panel in an excellent high state, and its manufacturing method. <P>SOLUTION: In the PDP 10, a protective film 114 is formed of a first protective film region 114a and a second protective film region 114b, and both protective film regions 114a, 114b contact a dielectric layer 1134 and face a discharge space 13. The first protective film region 114a and the second protective film region 114b are formed of metal oxides MgO as main component materials which have high secondary electron emission factors γ and high electrical insulation. Out of these, the second protective film region 114b is formed so as to contain more dopants by doping them than the first protective film region 114a. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a plasma display panel and a method for manufacturing the same, and more particularly to a configuration of a protective film.

Plasma display panels (hereinafter referred to as “PDP”) include an AC type (AC type) and a DC type (DC). Currently, the AC type, which is superior in terms of reliability and image quality, has become widespread. ing. The configuration of the AC type PDP will be described with reference to FIG.
As shown in FIG. 11, in the PDP 500, the front panel 510 and the back panel 520 are arranged to face each other with the partition wall 524 of the back panel 520 interposed therebetween, and the outer peripheral portions of the panels 510 and 520 are sealed. It has a structure. And between the panels 510 and 520, the discharge space 530 partitioned by the partition 524 is filled with a discharge gas such as Ne—Xe or He—Xe.

  Of the two panels 510 and 520, the front panel 510 has a configuration in which a display electrode pair 512, a dielectric layer 513, and a protective film 514 are sequentially stacked on the surface of the front substrate 511. The display electrode pair 512 includes a scan electrode (hereinafter referred to as “Scn electrode”) 512a and a sustain electrode (hereinafter referred to as “Sus electrode”) each having a laminated structure of transparent electrodes 512a1, 512b1 and bus electrodes 512a2, 512b2. It is described as “electrode”.) 512b.

  On the other hand, in the back panel 520, a data electrode (hereinafter referred to as “Dat electrode”) 522 and a dielectric layer 523 are sequentially laminated on the surface of the back substrate 521, and further on the surface of the dielectric layer 523. A partition wall 524 is formed between the Dat electrodes 522. In addition, red, green, and blue phosphor layers 525 are sequentially formed in each groove portion formed of the dielectric layer 523 and a pair of adjacent partition walls 524. The arrangement direction of the front panel 510 and the back panel 520 is such that the display electrode pair 512 and the Dat electrode 522 are substantially orthogonal to each other.

A driving unit (not shown) that applies a voltage to each of the electrodes 512 and 522 is connected to the PDP 500. A so-called time-division gray scale display method is generally used for driving the PDP 500. One field is divided into a plurality of subfields, and each subfield is divided into an initialization period, a writing period, a sustain period, and the like. It is composed.
By the way, in the configuration of the PDP 500, the protective film 514 is disposed so as to be exposed to the discharge space 530, and protects the dielectric layer 513 from ion bombardment due to discharge during panel driving. In addition, the protective film 514 is required to have two characteristics of wall charge retention performance from the writing period to the sustain period and secondary electron emission performance with high efficiency in the sustain period.

As a technique related to the protective film 514, in order to prevent moisture from adhering and adhering to the protective film between the formation of the protective film in the manufacturing stage and the completion of the panel, a two-layer structure of MgO and MgF ₂ is used. There is a technique for removing a layer made of MgF ₂ by electric discharge (see Patent Document 1). In addition, in order to form a protective film excellent in sputtering resistance without increasing the process time, a technique of forming a protective film from a two-layer structure formed by changing the film formation speed has been developed (Patent Document 2). ).
JP 2000-348626 A JP-A-10-162743

However, in the conventional PDP, a so-called display defect called black noise may occur during driving. This is because, during the driving, wall charges accumulated on the surface of the protective film 514 during the sustaining period move and disappear before the sustaining period, so that no discharge occurs in the discharge cell to be lit. caused by.
Further, in order to suppress the movement and disappearance of the wall charge before such a sustain period, it is conceivable that the property of the protective film is to improve the wall charge retention performance. Becomes high, and the light emission efficiency of the panel becomes low. In other words, such a measure cannot be adopted when considering the overall performance of the panel.

  The present invention has been made to solve the above-mentioned problems, and while maintaining the panel's luminous efficiency at a high level, the panel has a high driving margin and the occurrence of display defects due to black noise during driving. An object of the present invention is to provide a PDP and a manufacturing method thereof.

In order to solve the above problems, the present invention has the following features.
(1) It has a sealed container filled with a discharge gas in the discharge space, and in the sealed container, a display electrode pair (a pair of a Scn electrode and a Sus electrode) is sandwiched between the discharge space, and a display electrode is disposed on the other side. A PDP in which a Dat electrode is arranged in a direction intersecting with a pair and an inner surface facing a discharge space in a sealed container and a protective film is formed at least on a portion where a display electrode pair is formed. The film has a first region and a second region that both face the discharge space and have different discharge performances.

In addition, the discharge performance in the above indicates the wall charge retention performance and secondary electron emission performance of each region of the protective film in driving the PDP.
(2) In the PDP according to (1), a dielectric layer is formed between the protective film and the display electrode pair, and the first region and the second region are dielectrics in the thickness direction. It is characterized by touching the layer.
(3) In the PDP of (2) above, in the thickness direction of the protective film, the second region has a cross-sectional size in the plan view direction of the protective film from the boundary with the dielectric layer toward the discharge space. It has a shape that gradually decreases.
(4) In the PDP of (1), a dielectric layer is formed between the protective film and the display electrode pair, and the second region of the protective film is covered on the surface of the dielectric layer. Further, the first region is formed by being laminated on a partial region on the surface of the first region.
(5) In the PDP according to any one of the above (2) to (4), when the protective film is viewed in plan from the discharge space side, the second region has a spot-like or striped shape in the discharge space. It is exposed.
(6) In the PDP of (5) above, the shape of the second region exposed to the discharge space is any one of a stripe shape, a zigzag shape, a circular shape, an elliptical shape, and a polygonal shape.
(7) The PDP according to any one of (1) to (6), wherein the thickness of the protective film in the second region is set in a range of 10 nm to 1000 nm.
(8) In the PDP according to any one of (1) to (7), a discharge cell is formed at each position where the display electrode pair and the Dat electrode intersect, and the second region is formed in units of the discharge cell. The area exposed to the discharge space is set in the range of 10% to 90% with respect to the exposed area of the first region in the discharge space.
(9) The PDP according to any one of (1) to (8), wherein the first region and the second region in the protective film are composed of MgO, CaO, BaO, SrO, MgNO, and ZnO. It is characterized by including at least one material selected from the group of materials.
(10) The PDP according to any one of (1) to (9), wherein the secondary electron emission coefficient of the second region in the protective film is higher than the secondary electron emission coefficient of the first region. To do.
(11) The PDP according to any one of (1) to (10), wherein the protective film includes more impurities in the second region than in the first region. .
(12) In the PDP of (11) above, the second region in the protective film contains hydrogen atoms in the range of 1 × 10 ¹⁸ atoms / cm ^{3 to} 1 × 10 ²³ atoms / cm ³ as impurities. It is characterized by being.
(13) In the PDP of (11) or (12) above, the second region in the protective film has impurities in the range of 1 × 10 ¹⁸ / cm ³ or more and 1 × 10 ²³ / cm ³ or less. It is characterized by containing silicon atoms.
(14) The PDP according to any one of (1) to (13), wherein the second region in the protective film has a first level closer to the conductor in the forbidden band. To do.
(15) The PDP according to any one of (1) to (14), wherein the first region of the protective film has an electrical insulating property of 0.01% or more and less than 100% as compared to the second region. It is set within the range.
(16) The PDP according to any one of (1) to (15), wherein the first region in the protective film has a higher film density than the second region.
(17) A method for manufacturing a PDP, comprising the following steps.

* Dielectric layer forming step: A display electrode pair is formed on one surface of the first substrate, and a dielectric layer is formed so as to cover the display electrode pair.
* Protective film forming step: forming a protective film so as to cover the surface of the dielectric layer.
* Sealing step: With the protective film side facing the second substrate on which the Dat electrode is formed and the display electrode pair and the Dat electrode intersect with each other, leave a discharge space between them. A 1st board | substrate is opposingly arranged and an outer peripheral part is sealed.

Here, in the protective film formation step, a protective film is formed from the first region and the second region that both face the discharge space and have different discharge performance (for example, charge retention performance, secondary electron emission capability, etc.). To do.
(18) The method for manufacturing a PDP according to (17), wherein in the protective film forming step, the first region and the second region are formed in contact with the dielectric layer.
(19) In the method of manufacturing the PDP according to (17), the protective film forming step includes the following substeps.

* 1st area | region formation step; A 1st area | region is formed so that the surface of a dielectric material layer may be covered.
* 2nd area | region formation step; 2nd area | region is laminated-formed in the partial area | region in the surface of 1st area | region.
(20) In the method of manufacturing the PDP according to (18) or (19), in the protective film formation step, when the protective film is viewed in plan from the discharge space side, the second region is spotted or striped. The protective film is formed so as to have a shape and exposed to the discharge space.
(21) In the method for manufacturing a PDP according to (20), the exposed shape of the second region in the discharge space is any one of a stripe shape, a zigzag shape, a circular shape, an elliptical shape, and a polygonal shape. And
(22) In the method for manufacturing a PDP according to any one of (17) to (21), in the protective film forming step, the first region and the second region are made of MgO, CaO, BaO, SrO, MgNO, and ZnO. It is characterized by comprising at least one material selected from the group of metal oxide materials to be formed.
(23) In the method for manufacturing a PDP according to any one of (17) to (22), the second region is formed in a state including more impurities than the formation of the first region in the protective film forming step. It is characterized by that.
(24) In the method for producing a PDP according to (23), in the protective film formation step, in the formation of the second region, at the time of film formation using at least one material selected from the material group, It is characterized by carrying out while introducing impurity gas.
(25) In the method for producing a PDP according to (23) or (24), in the protective film formation step, in the formation of the second region, at least one selected from hydrogen, silicon, and chromium is used in the region. It is included in the inside.

  In the PDP according to the present invention, the protective film is formed of the first region and the second region that both face the discharge space and have different discharge performances. Therefore, in one region, the write period is changed to the sustain period. It is possible to provide a function of maintaining the wall charge retention performance up to a high level, and to provide a function of efficiently emitting secondary electrons in the maintenance period in the other region. For this reason, the PDP according to the present invention has both the low discharge start voltage and the reliable holding of the write wall charge as the whole panel.

Therefore, the PDP according to the present invention has an advantage that the display defect due to the high driving margin of the panel and black noise during driving is small while maintaining the high luminous efficiency of the panel.
In addition, according to the method for manufacturing a PDP according to the present invention, a PDP having high light emission efficiency and few display defects can be manufactured easily and reliably.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, about embodiment described below, it uses as an example for demonstrating the characteristic in a structure and an effect | action of this invention, This invention is not limited to this.
(Embodiment 1)
1. Configuration of Plasma Display Panel 10 The configuration of a plasma display panel (hereinafter referred to as “PDP”) 10 according to Embodiment 1 of the present invention will be described with reference to FIG. It is a principal part perspective view which shows the structure of PDP10 which concerns on this.

1-1. Configuration of Front Panel 11 The front panel 11 has a scan electrode (hereinafter referred to as “Scn electrode”) 112a and a sustain electrode on a surface (a lower surface in FIG. 1) of the front substrate 111 facing the rear panel 12. (Hereinafter, described as “Sus electrodes”.) A plurality of display electrode pairs 112 made of 112b are arranged in parallel to each other, and the dielectric layer 113 and the protective film 114 are sequentially arranged so as to cover the display electrode pairs 112. A coating is formed.

Each of the Scn electrode 112a and the Sus electrode 112b is made of wide transparent electrodes 112a1 and 112b1 made of ITO (tin-doped indium oxide), SnO ₂ , ZnO, etc., and Cr—Cu—Cr or Ag for reducing electric resistance. The formed bus electrodes 112a2 and 112b2 are respectively combined.
The dielectric layer 113 is made of a low-melting glass material, and the protective film 114 is mainly composed of MgO. The configuration of the protective film 114 will be described later.

1-2. Configuration of the Back Panel 12 The back panel 12 has a data electrode (hereinafter referred to as “Dat” in a direction substantially orthogonal to the display electrode pair 112 on the surface of the back substrate 121 facing the front panel 11 (upper surface in FIG. 1). A plurality of the electrodes 122 are arranged, and a dielectric layer 123 is formed so as to cover the Dat electrode 122. On the dielectric layer 123, a partition wall 124 is erected between adjacent Dat electrodes 122. On the inner wall surface of the groove formed by the dielectric layer 123 and the two adjacent partition walls 124, A phosphor layer 125 is provided in a direction along the Dat electrode 122.

The Dat electrode 122 is made of a metal material such as silver (Ag), for example. In addition to Ag, the forming material may be a metal material such as gold (Au), chromium (Cr), copper (Cu), nickel (Ni), platinum (Pt), or the like, such as laminating them. A combination of these methods can also be used.
The dielectric layer 123 is basically formed of a low-melting glass material, similar to the dielectric layer 113 of the front panel 11, but may include titanium oxide (TiO ₂ ). The partition wall 124 is formed using, for example, a lead glass material.

The phosphor layer 125 is composed of three colors of red (R), green (G), and blue (B). For example, the following phosphors are used, and R, G, B in order of each groove. It is formed repeatedly.
R phosphor; (Y, Gd) BO ₃ : Eu
G phosphor; Zn ₂ SiO ₄ : Mn
B phosphor; BaMg ₂ Al ₁₄ O ₂₄ : Eu
1-3. Arrangement of Front Panel 11 and Rear Panel 12 In the PDP 10, the front panel 11 and the rear panel 12 sandwich a partition wall 124 formed on the rear panel 12 as a gap material, and the display electrode pair 112 and the Dat electrode 122. Are arranged in a direction substantially orthogonal to each other, and in this state, the outer peripheral portions of the panels 11 and 12 are sealed. As a result, the discharge space 13 partitioned by the respective partition walls 124 is formed between the front panel 11 and the back panel 12, and both the panels 11 and 12 form a sealed container. The discharge space 13 in the PDP 10 is configured to be filled with a discharge gas in which Ne, Xe, He, or the like is mixed. The sealed pressure of the discharge gas is, for example, about 50 to 80 (kPa).

In the PDP 10, discharge cells (not shown) are formed at each location where the display electrode pair 112 and the Dat electrode 122 intersect three-dimensionally. The PDP 10 has a plurality of discharge cells arranged in a matrix.
2. Configuration of Protective Film 114 Next, the configuration of the protective film 114 having the most characteristics among the configurations of the PDP 10 will be described with reference to FIGS. 1 and 2.

  As shown in the enlarged portion of FIG. 1, in the PDP 10 according to the present embodiment, the protective film 114 includes a first protective film region 114a and a second protective film region 114b. Both protective film regions 114 a and 114 b are formed so as to be in contact with the dielectric layer 1134 and to face the discharge space 13. The film thicknesses of the protective film regions 114a and 114b are set to be equal (for example, about 0.6 μm), and when viewed as the entire protective film 114, the surface facing the discharge space 13 is substantially flat. ing. Note that the first protective film region 114a and the second protective film region 114b are formed so as not to cause a gap therebetween.

  As shown in FIG. 2A, the second protective film region 114 b is formed in a region connecting the discharge space 13 with the region where each of the Scn electrode 112 a and the Sus electrode 112 b is formed. Further, as shown in FIG. 2B, the second protective film region 114b is substantially the same in the area exposed to the discharge space 13 in the region corresponding to the Scn electrode 112a and the region corresponding to the Sus electrode 112b. It is formed to become. The second protective film region 114b is formed in a spot shape.

  Here, as shown in FIG. 2B, in the PDP 10 according to the present embodiment, the second protective film region 114b is in the longitudinal direction of the Scn electrode 112a and the Sus electrode 112b (vertical direction in FIG. 2). They are formed to have different exposed areas. This is for the purpose of increasing the formation ratio of the second protective film region 114b in the region where the frequency of sputtering by discharge is higher when the PDP 10 is driven. In each discharge cell, the ratio of the exposed area of the second protective film region 114b to the exposed area of the first protective film region 114a in the discharge space 13 is preferably in the range of 10% to 90%. This will be described later.

As shown in FIG. 1 and FIG. 2, the protective film 114 of the PDP 10 is composed of two protective film regions 114a and 114b. Each structure of the two protective film regions 114a and 114b includes the following: There are significant differences.
Both the first protective film region 114a and the second protective film region 114b are formed using MgO, which is a metal oxide having a high secondary electron emission coefficient γ and high electrical insulation, as a main constituent material. The difference between the first protective film region 114a and the second protective film region 114b is the presence or absence of the addition amount of impurities (for example, hydrogen, silicon, chromium, etc.) to MgO. That is, while the first protective film region 114a is formed with almost no impurities mixed in as an operation, the second protective film region 114b is formed so as to be doped with impurities.

Note that even in the first protective film region 114a, a very small amount of impurities may be mixed during the film formation process, but the doping amount of the impurity in the second protective film region 114b is set to be larger than this. Has been.
As described above, the second protective film region 114b includes a larger amount of impurities than the first protective film region 114a, so that the second protective film region 114b can be compared with the first protective film region 114a. And has a high secondary electron emission coefficient γ.

As described above, in the PDP 10, in each discharge cell, the first protective film region 114a and the second protective film region 114b having different secondary electron emission coefficients γ as discharge characteristics exist, and both protections are present. The film regions 114 a and 114 b face the discharge space 13.
3. Next, a method for driving the PDP 10 will be described with reference to FIG. FIG. 3 shows a method of dividing one field into eight subfields SF1 to SF8 in order to express, for example, 256 gradations using an intra-field time division gradation display method. The hatched area indicates the writing period. Although not shown in the drawings, a driver is connected to each of the electrodes 112a, 112b, and 122 of the PDP 10, and a circuit unit for driving these is connected. This is a publicly known one, and the description thereof is also omitted.

  As shown in FIG. 3, in the driving method of PDP 10 according to the present embodiment, one field is divided into eight subfields SF1 to SF8, and the relative luminance ratio of each subfield is 1: 2: 4: 8: 16. The number of sustain pulses is set to be 32: 64: 128. By controlling lighting / non-lighting of each of the subfields SF1 to SF8 according to display luminance data, 256 gradations can be displayed with a combination of eight subfields. In this embodiment, control is performed with 256 gradations, but the present invention is not limited to this.

Each subfield includes an initialization period T ₁ to which a certain time is allocated, a writing period T _2, and a sustain period T ₃ set with a length of time corresponding to the relative ratio of luminance. For example, when performing display driving of the PDP 10 according to the present embodiment, first, in the initialization period T ₁ , an initializing discharge is generated in all the discharge cells of the panel unit 10, thereby leading to the previous subframe. Initialization is performed to eliminate the influence of the discharge performed in the subframe and to absorb the variation in the discharge characteristics.

Each voltage pulse 1001, 1002, 1003 having a waveform set for each period T _{1 to} T ₃ is applied to each of the electrodes 112a, 112b, 122.
In the writing period T _2, subfield data Scn electrodes 112a (1) based on ~112a a (k) continue to scan sequentially for each line, the discharge cell to cause a sustain discharge in the subfield, Scn electrodes A slight discharge is generated between 112 a and the Dat electrode 122. Thus, in the discharge cell in which a slight discharge is generated between the Scn electrode 112a and the Dat electrode pair 122, wall charges are stored on the surface of the protective film 114 of the front panel 11.

Thereafter, in the sustain period T ₃ , voltage pulses 1001 and 1002 having an AC waveform are applied to the Sus electrode 112b and the Scn electrode 112a of all the discharge cells, so that the discharge cell in which writing is performed in the writing period T ₂ is performed. Sustain discharge occurs. Here, the voltage pulses 1001 and 1002 in the sustain period T ₃ have the same period, and the phases thereof are shifted by a half period. Further, the discharge start voltage in the PDP 10 is about 125 V, which is lower than that of the conventional PDP.

In the sustain period T ₃ , the voltage pulse applied to the Dat electrode 122 is set to zero potential. In the sustain period T3, a so-called thin line pulse may be applied to the Dat electrode 122.
4). Advantages of PDP 10 As described above, the PDP 10 can have a discharge start voltage (for example, about 125 V) that is significantly lower than the conventional PDP (discharge start voltage: about 180 V). In the PDP 10, the writing wall charge can be sufficiently accumulated in the driving, and the occurrence of black noise that the discharge cells to be displayed do not discharge is small. This is considered to be based on the following mechanism.

  As shown in FIGS. 1 and 2, in the PDP 10, the protective film 114 is divided into a first protective film region 114a and a second protective film region 114b having different discharge performances (charge holding performance and secondary electron emission performance). Since both the protective film regions 114a and 114b are formed so as to face the discharge space 13, different discharge performances can be maintained in the first and second protective film regions 114a and 114b, respectively. As a result, the protective film 114 as a whole can efficiently discharge secondary electrons, reduce the discharge start voltage, and improve the retention performance of the write wall charge. As a result, the display defect due to black noise can be reduced.

That is, the first protective film region 114a and the second protective film region 114b share functions different from each other, whereby the protective film 114 as a whole can have good discharge characteristics. In addition, by forming in the form as shown in FIG. 2B, the effect of increasing the degree of freedom in designing and facilitating the control of discharge characteristics can be obtained.
Further, in the PDP 10, the shape of each region of the first protective film region 114a and the second protective film region 114b, the exposed area to the discharge space 13, the film thickness, the formation position, and the like are formed and arranged in an appropriate range. Can do. Accordingly, in the PDP 10, it is possible to optimize the effects of the respective protective film regions 114a and 114b, and the discharge performance and reliability of the panel can be further improved.

  Further, in the PDP 10, due to the presence of the second protective film region 114b having high secondary electron emission characteristics exposed to the discharge space 13 in the configuration of the protective film 114, the charge concentration of the protective film 114 during driving increases. Discharge variation is suppressed and the discharge start voltage can be reduced by increasing the discharge probability, the drive margin is widened, and the occurrence of black noise and the like can be prevented.

  In the PDP 10, by doping impurities such as hydrogen and silicon into the second protective film region 114b, it acts as a reservoir of electrons excited in the vicinity of the conduction band, so that the visible light emission from the emission center is prolonged. In addition, an effect of abundant electrons emitted into the discharge space is also achieved. In addition, when chromium is doped as an impurity, the doped chromium functions as a light emission center and emits visible light, and electrons that are excited to the vicinity of the conduction band in the protective film 114 are generated, and the carrier concentration of the protective film 114 As a result, the discharge variation can be reduced and the discharge probability can be increased.

Further, maintained until the PDP 10, the high electrically insulating first protective layer area 114a exposed to the discharge space 13 has, without releasing the write accumulated wall charges in the write period T _2, leading to the sustain period T ₃ Therefore, it is possible to accurately display the discharge cells that are desired to be displayed, reduce the discharge variation, and prevent the occurrence of black noise. In addition, the high film density and sputtering resistance of the first protective film region 114a can protect the protective film 114 from ion bombardment due to sustain discharge, and can have a long life.

Therefore, the PDP 10 according to the present embodiment has an advantage that the display efficiency due to the high driving margin of the panel and black noise during driving is small while maintaining the light emission efficiency of the panel in a high state.
In the present embodiment, the shape of the second protective film region 114b in the protective film 114 is a spot shape, but the present invention is not limited to this.

5). In the following, a desirable range of numerical values for forming the protective film 114 will be described with reference to FIGS. FIG. 4 is a characteristic diagram showing the relationship between the resistance ratio of the second protective film region 114b to the first protective film region 114a and the accumulated wall charge amount. Here, as described above, the first protective film region 114a is formed by using MgO without mixing impurities as an operation, and enters the second protective film region 114b. As the impurity, a film formed by changing hydrogen was used.

  As shown in FIG. 4, the second protective film region 114b is within a resistance ratio range of 0.001% or more and less than 100% with respect to the first protective film region 114a, that is, the first protective film region 114a. In the case where the electric insulation is higher than that of the second protective film region 114b, it indicates that wall charges are accumulated. In particular, within the range of the resistance ratio of 0.01% or more and less than 100%, wall charges leak when the first protective film region 114a exhibits higher electrical insulation than the second protective film region 114b. It can be seen that there are few and stable accumulation.

In FIG. 4, when the resistance ratio of the second protective film region 114b with respect to the first protective film region 114a is in the range of 0.001% or more and less than 100%, write wall charges are accumulated. Can do. Within this resistance ratio range, the content (in atomic units) of hydrogen as an impurity in the second protective film region 114b is 1 × 10 ¹⁸ atoms / cm ³ or more and 1 × 10 ²³ atoms / cm ³ or less. It was in range. Further, as impurities other than hydrogen, second protective film region 114b in which silicon and chromium are included in the range of 1 × 10 ¹⁸ atoms / cm ^{3 to} 1 × 10 ²³ atoms / cm ^{3 in} atomic units, respectively. In FIG. 4, the relationship between the resistance ratio and the wall charge was the same as in FIG. Impurities such as silicon and chromium can be doped by forming a film with an MgO material mixed with silicon and chromium impurities at a predetermined ratio as a target.

In addition, the first protective film region 114a formed with the same material structure as that of the protective film in the conventional PDP contains about 1 × 10 ¹⁸ impurities / cm ³ in atomic units due to contamination in the manufacturing stage. To do. In order to make the secondary electron emission coefficient γ of the second protective film region 114b higher than that of the first protective film region 114a, the amount of impurities is more than about 1 × 10 ¹⁸ atoms / cm ³ in atomic units. It is necessary to contain. However, when the content of impurities in the second protective film region 114b is greater than 1 × 10 ²³ / cm ³ in atomic units, the resistance ratio of the second protective film region 114b becomes too low and the electrical insulation is performed. It is difficult to maintain the writing wall charge. Therefore, in this case field is to the area for forming the second protective film regions 114b affected, but the writing wall charge discharge cell is not discharged to be leaked discharged before the sustain period T _3, Black The possibility of generating noise increases.

  In the PDP 10 according to the present embodiment, the second protective film region 114b is doped with an impurity such as hydrogen or silicon, thereby acting as a reservoir of electrons excited in the vicinity of the conduction band, and thus released into the discharge space 13. In addition, the emission of visible light from the emission center is prolonged. In addition, when chromium is used as an impurity to be doped, chromium becomes a light emission center when the panel is driven, and electrons are excited in the protective film 114 to the vicinity of the conduction band, and the protective film 114 is generated by the excited electrons. As a result, the carrier concentration increases, the resistance decreases, and the efficiency of secondary electron emission can be further improved.

Next, FIG. 5 is a characteristic diagram showing the relationship between the ratio of the exposed area of the second protective film region 114b and the first protective film region 114a in the PDP 10 to the discharge space 13 and the discharge start voltage. However, MgO is used as the main material constituting the protective film 114, and the second protective film region 114b contains 1 × 10 ²⁰ hydrogen atoms as an impurity / cm ³ so that both the protective film regions 114a and 114b Each film thickness is about 0.6 μm.

As shown in FIG. 5, when the area ratio is in the range of 10% or more and 90% or less, the discharge start voltage of the panel is lower than the discharge start voltage (about 180V) when the area ratio is less than 10%. ing. In particular, when the area ratio is in the range of 30% or more and 70% or less, the discharge start voltage is reduced to about 125 V and is stable with respect to the area ratio.
As shown in FIG. 5, when the area ratio is set to be larger than 90%, the area of the second protective film region 114b having a low resistance becomes too large, and as a result, it is difficult for discharge to occur. When the area ratio is set to be smaller than 10%, the discharge start voltage increases to the same level as that of the conventional PDP.

  Note that in this embodiment, when forming the second protective film region 114b with respect to the first protective film region 114a, many impurities are doped to excite electrons and easily release secondary electrons. . Thereby, in the PDP 10, the secondary electron emission coefficient γ of the second protective film region 114b can be higher than that of the first protective film region 114a. Both the first protective film region 114a made of MgO and having a secondary electron emission coefficient equivalent to that of the protective film in the conventional PDP and the second protective film region 114b having a higher secondary electron emission coefficient are formed. By forming, secondary electrons are efficiently emitted as a whole of the protective film 114 as compared with the conventional PDP, and the discharge start voltage in the discharge cell is greatly reduced.

  As described above, based on the results shown in FIGS. 4 and 5, in the PDP 10 according to the present embodiment, the area ratio of the second protective film region 114b to the first protective film region 114a is within the range of 10% or more and 90% or less. It is desirable to set to. Here, it goes without saying that the area ratio of the second protective film region 114b to the first protective film region 114a is preferably within the above numerical range for all discharge cells. Even if it is outside this numerical range, there is still a merit from the viewpoint that the above effect can be obtained as compared with the conventional PDP.

The doping amount of the impurity in the second protective film region 114b is preferably in the range of 1 × 10 ¹⁸ atoms / cm ^{3 to} 1 × 10 ²³ atoms / cm ³ in atomic units. As an impurity to be doped, hydrogen, silicon, chromium, or a combination thereof can be selected.
In addition, although the verification result is not specifically shown about the film thickness of the protective film 114, it is desirable to set it as 10 nm or more and 1000 nm (1.0 micrometer) or less.

6). Method for Forming Protective Film 114 Hereinafter, a method for forming the protective film 114, which is a feature of the present embodiment, among the methods for manufacturing the PDP 10 will be described with reference to FIG.
As shown in FIG. 6A, first, display electrode pairs 112a and 112b are formed on one main surface, and a dielectric layer 15 made of lead-based low-melting glass is formed so as to cover the surfaces. Prepared front substrate 111 is prepared. Then, a metal mask 2001 is disposed along the surface of the dielectric layer 113 of the front substrate 111. The metal mask 2001 is provided with a window 2001h in a portion corresponding to the first protective film region 114a.

The front substrate 111 on which the metal mask 2001 is disposed is set in an electron beam evaporation apparatus, and an electron beam is irradiated and evaporated onto a high-purity MgO material target in Ar gas, and a first protective film material is evaporated through a window 2001h. At this time, the deposition conditions are such that the thickness of the first protective film region 114a is about 600 nm.
Next, as shown in FIG. 6B, with respect to the front substrate 111 on which the first protective film region 114a is formed with a required pattern, a metal mask is formed on the side on which the first protective film region 114a is formed. Arrange along 2002. The metal mask 2002 is provided with a window portion 2002h corresponding to the pattern of the second protective film region 114b to be formed. Then, an electron beam is irradiated and deposited on the MgO material target in an Ar / H ₂ gas atmosphere into which an impurity hydrogen gas having a predetermined flow rate is introduced in an electron beam evaporation apparatus, and a predetermined region is passed through the window 2002h of the metal mask 2002. A second protective film material is deposited on the substrate. Thus, the second protective film region 144b is formed with the same film thickness (600 nm) with no gap between the first protective film region 114a.

As shown in FIG. 6C, the protective film 114 including the first protective film region 114a and the second protective film region 114b can be formed through the above process.
In the method of forming the protective film 114, the first and second protective film regions 114a and 114b are formed by using the metal masks 2001 and 2002. However, other methods such as photolithography are used. The protective film 114 may be formed using, for example. When using the photolithographic method, first, a film made of MgO is formed over the entire surface of the dielectric 113, and then a resist pattern is formed with the pattern of the first protective film region 114a to be formed by a photolithography process, Etching with an etching solution (for example, phosphoric acid solution) forms the first protective film region 114a in a predetermined pattern. Next, MgO in the second protective film region 114b is deposited by mixing impurities under predetermined conditions, and then a resist pattern of the pattern of the second protective film region 114b to be formed is formed. Thereafter, phosphoric acid is formed. Etching with a solution forms the second protective film region 114 b in a region other than the first protective film region 114 a on the surface of the dielectric layer 113. In this manner, the protective film 114 can be formed.

Furthermore, in forming the protective film 114, a CVD method, a sputtering method, or a combination thereof may be used.
Further, in the present embodiment, the second protective film region 114b of the protective film 114 is formed in a spot shape, but other shapes such as a stripe shape, a zigzag shape, a circular shape, an elliptical shape, a polygonal shape, etc. It can also be a shape or the like.

The main constituent material in forming both protective film regions 114a and 114b is a metal oxide material containing at least one of MgO, CaO, BaO, SrO, MgNO and ZnO in addition to MgO, or a combination thereof. Other materials can also be used. In this case as well, the above effect can be obtained in the same manner.
In this embodiment, hydrogen gas is used to dope impurities in the formation process of the second protective film region 114b. In addition to this, at least one of chlorine, silicon, and chromium is used as an impurity. You may make it contain as.

Further, the order of forming the first protective film region 114a and the second protective film region 114b is not limited to the order shown in FIG. That is, the second protective film region 114b may be formed first, and then the first protective film region 114a may be formed.
(Embodiment 2)
Below, the structure of PDP20 which concerns on Embodiment 2 is demonstrated using FIG. The difference between the PDP 20 and the PDP 10 according to the first embodiment is in the pattern of the first protective film region 214 a and the second protective film region 214 b in the protective film 214.

  As shown in FIG. 7A, in the PDP 20 according to the present embodiment, the protective film 214 is composed of a first protective film region 214a and a second protective film region 214b having different discharge performances. This is the same as the PDP 10 of the first embodiment, except that the second protective film region 214b is formed in a stripe pattern as shown in the BB cross section of FIG. 7B. .

  As shown in FIGS. 7A and 7B, the second protective film region 214b has the same shape in the region corresponding to the Scn electrode 112a and the region corresponding to the Sus electrode 112b. As shown in FIG. 7A, the film thickness of the protective film 214 in the first protective film region 214a and the film thickness in the second protective film region 214b are 10 nm or more as in the first embodiment. Within the range of 1000 nm or less, they are set substantially the same.

The PDP 20 having such a configuration has the same advantages as the PDP 10 according to the first embodiment. Further, a desirable numerical range or a manufacturing method is the same as that of the first embodiment.
In the present embodiment, the second protective film region 214b is formed to have a rectangular exposure pattern. However, the second protective film region 214b is divided into an oval shape or a zigzag shape in the vertical direction of FIG. 7B. A plurality of rectangular exposure patterns may be formed side by side. In addition, as in the first embodiment, the configuration can be changed as appropriate.
(Embodiment 3)
Below, the structure of PDP30 which concerns on Embodiment 3 is demonstrated using FIG. The difference between the PDP 30 and the PDP 10 according to the first embodiment and the PDP 20 according to the second embodiment is that the pattern of the first protective film region 314a and the second protective film region 314b in the protective film 314, particularly the second It is in the pattern of the protective film region 314b.

As shown in FIG. 8A, the protective film 314 of the PDP 30 has a second protective film region 314b formed in a pointed shape from the boundary side with the dielectric layer 113 toward the discharge space 13 side. doing. The surface of the dielectric layer 113 other than the portion where the second protective film region 314b is formed is covered with the first protective film region 314a.
Further, as shown in FIG. 8B, the cross-sectional shape of the second protective film region 314b is a circle or an ellipse, and the size thereof is the center of the discharge cell as in the first embodiment. It is set large in the area.

In the film thickness direction of the protective film 314, the height of the second protective film region 314b is set slightly higher than the film thickness of the first protective film region 314a, and the top portion thereof is the first protective film region. It is in a state of projecting from the film surface of 314a to the discharge space 13 side.
In the PDP 30 according to the third embodiment, since the second protective film region 314b has a pointed shape as described above, the exposed area of the protective film 314 to the discharge space 13 is the PDP 10 of the first and second embodiments. , 20 can be set. For this reason, the PDP 30 has the same effects as those of the first embodiment and has a degree of freedom in setting the area ratio between the first protective film region 314a and the second protective film region 314b. high. Therefore, the PDP 30 can obtain a higher effect than the PDPs 10 and 20 according to the first and second embodiments.

Also in the present embodiment, the configuration and the like can be changed as appropriate as in the first and second embodiments.
In addition, although the illustration of the method for forming the protective film 314 according to this embodiment is omitted, the following method can be used.
First, similarly to FIG. 6A, a metal mask is arranged along the dielectric layer 113 on the front substrate 111. A metal mask having a window at a position where the second protective film region 314b is to be formed is used. Here, in the formation of the protective film 314 of the present embodiment, the size of the window of the metal mask is set to the cross-sectional size of the base portion of the second protective film region 314b to be formed (the portion in contact with the dielectric layer 113). Set smaller than (size).

  A material for forming the second protective film region 314b is vacuum-deposited on the surface of the dielectric layer 113 formed on the front substrate 111 through a window of a metal mask. When vacuum deposition is performed in this manner, a point-shaped second protective film region 314 b as shown in FIG. 8A is formed on the surface of the dielectric layer 113. As this forming method, a method of forming a Spindt-type emitter of FED (Field Emission Display) can be applied.

  Next, the metal mask is removed from the front substrate 111 in which the second protective film region 314b is formed, and the surface of the dielectric layer 113 in which the second protective film region 314b is formed is first evaporated by vacuum deposition or the like. The protective film region 314a is formed. At this time, the tip portion of the second protective film region 314b is also covered with the first protective film region 314a. However, after the front panel 31 and the rear panel 12 are bonded together, discharge is caused during aging. Due to the discharge generated in the space 13, the tip portion of the second protective film region 314b is exposed to the discharge space 13 as shown in FIG.

As described above, the protective film 314 of the PDP 30 according to the present embodiment is formed. As a method for forming the second protective film region 314b, a method such as reactive ion etching or anisotropic wet etching can be used in addition to the above method.
(Embodiment 4)
Next, PDP 40 according to Embodiment 4 will be described with reference to FIGS. 9 and 10.

1. Configuration of PDP 40 First, the PDP 40 according to the fourth embodiment is different from each of the PDPs 10 to 30 according to the first to third embodiments in the form of the protective film 414. Below, it demonstrates centering on the form of the protective film 414. FIG.
As shown in FIG. 9A, in the protective film 414 of the PDP 40, the first protective film 414a is formed on the entire surface of the dielectric layer 113, and the second protective film 414b is formed in a partial region on the surface. Are stacked and configured. The first protective film 414a has a thickness of about 600 nm, for example, and has a substantially flat surface. The second protective film 414b has a thickness of 100 nm.

  As shown in FIG. 9B, which is a view taken in the direction of arrow D in FIG. 9A, the second protective film 414b is formed with a circular pattern, for example. In addition to the circular shape, the pattern of the second protective film 414b may be a spot shape, a stripe shape, a zigzag shape, a circular shape, an elliptical shape, a polygonal shape, or the like. In this case, the film thickness is about 10 nm to 20 nm, and the small and various shapes of the chevron shapes rounded around each other can be arranged regularly or irregularly.

The second protective film 414b is formed at a position corresponding to the Scn electrode 112a and the Sus electrode 112b so that the exposed areas have almost the same area ratio. Depending on the strength of discharge, the exposed area may be freely designed and arranged so that the exposed area has a different area ratio.
In the second protective film 414b, the exposed area with respect to the discharge space 13 is a relative value to the exposed area of the first protective film 414a, and is set within the same numerical range as the PDP 10 according to the first embodiment. Has been.

  In the fourth embodiment, the protective film 414 is formed using MgO as a constituent material of the first protective film 414a and a metal having a secondary electron emission coefficient γ higher than that of MgO as a constituent material of the second protective film 414b. BaO which is an oxide film material is used. The second protective film 414b formed using BaO as the main constituent material has a higher secondary electron emission coefficient γ than the first protective film 414a formed using MgO as the main constituent material. It is formed by doping more impurities than one protective film 414a.

As an impurity used for forming the second protective film 414b, for example, hydrogen is doped in an atmosphere such as Ar gas / H ₂ gas so that an appropriate amount of hydrogen is contained, and BaO is used as a main constituent material by an electron beam method. A film is formed. Although the first protective film 414a is formed with almost no impurities mixed in as an operation, a very small amount of impurities may be mixed in the film formation process, but the amount of impurities in the second protective film 414b is More than this.

Thus, the first protective film 414a and the second protective film 414b are formed so that at least one discharge performance (here, the secondary electron emission coefficient γ) is different from each other, and both the protective films 414a, A part of the surface of both 414b is exposed to the discharge space.
In the PDP 40 according to the fourth embodiment, the relationship between the resistance ratio of the second protective film 414b to the first protective film 414a and the amount of accumulated wall charges is substantially the same as in the first embodiment. (Not shown). The resistance ratio of the second protective film 414b to the first protective film 414a is in the range of 0.001% or more and less than 100%, and the first protective film 414a is more electrically than the second protective film 414b. When the insulation is high, wall charges are accumulated. In particular, when the resistance ratio is in the range of 0.01% or more and less than 100% and the first protective film 414a exhibits higher electrical insulation than the second protective film 414b, wall charges may leak. Accumulated in a small amount.

When the resistance ratio is in the range of 0.001% to less than 100%, the hydrogen content as an impurity in the second protective film 414b is 1 × 10 ¹⁸ atoms / cm ³ or more and 1 × in atomic units. It is desirable to set within the range of 10 ²³ pieces / cm ³ or less. The same applies to the case where silicon, chromium, or the like is used as an impurity doped into the second protective film 414b.
2. Next, in the PDP 40 according to the fourth embodiment, FIG. 10 illustrates a desirable range of the ratio of the exposed area of the second protective film 414b to the discharge space 13 in the PDP 40 according to the fourth embodiment. It explains using. FIG. 10 is a characteristic diagram showing the relationship between the area ratios of the protective films 414a and 414b and the discharge start voltage in the fourth embodiment.

In this verification, as described above, MgO and BaO are used as the protective film materials, respectively, and the BaO second protective film 414b contains 1 × 10 ²⁰ hydrogen atoms / cm ³ as impurities. In addition, the thickness of the first protective film 414a was set to about 600 nm, and the thickness of the second protective film 414b was set to about 100 nm.
As shown in FIG. 8, when the area ratio is in the range of 10% or more and 90% or less, the discharge start voltage is lower than when the area ratio is less than 10%. In particular, when the area ratio is in the range of 20% or more and 60% or less, the discharge start voltage decreases to about 115 V and is stable.

On the other hand, when the area ratio is greater than 90%, the exposed area of the low-resistance second protective film 414b is too large, and thus it is difficult for discharge to occur. When the area ratio is less than 10%, MgO The discharge start voltage (about 185 V) is almost the same as that of a conventional PDP in which a protective film is formed in one layer.
From these results, in the PDP 40, the discharge start voltage is about 115 V, which can be significantly reduced as compared with the conventional PDP. That is, the PDP 40 according to the fourth embodiment has an advantage that the writing wall charges can be sufficiently accumulated and the black noise that the discharge cells to be displayed are not discharged is small.

3. Advantages of PDP 40 Therefore, in the PDP 40 according to the present embodiment, in addition to the advantages of the PDPs 10 to 30 according to the first to third embodiments, the discharge start voltage is set by setting the area ratio within the above desirable range. There is also an advantage that it can be further reduced.
(Other matters)
About the said Embodiment 1-4, it used as an example in order to demonstrate the characteristic of this invention, Comprising: This invention is not limited to this. For example, in the driving method of FIG. 3, the voltage pulse is not applied to the Dat electrode 122 in the sustain period T ₃ , but a so-called sustain data pulse may be applied.

In the first to fourth embodiments, the partition walls 124 of the back panel 12 are formed in a stripe shape, but may be formed in a cross-beam shape (waffle shape), and a priming discharge subcell is provided between adjacent discharge cells. Also good.
Further, the materials constituting the PDPs 10 to 40 of the above-described first to fourth embodiments can be appropriately changed except that there are desirable materials for the protective films 114 to 414 as described above. is there.

  In the first to fourth embodiments, the sealed container is formed by bonding the front panels 11 to 41 and the rear panel 21, but only for a PDP formed by bonding two panels. is not. For example, it can also be set as the structure which forms a some discharge cell with a tube-shaped airtight container.

  The present invention is effective in realizing a PDP used in the video equipment industry, the advertising equipment industry, and other industrial fields such as a large television, a high-definition television, or a large display device.

It is principal part sectional drawing which shows PDP10 which concerns on Embodiment 1 of this invention. 2 is a cross-sectional view showing a configuration of a protective film 114 in the PDP 10. FIG. FIG. 4 is a pulse waveform diagram applied to each electrode 112a, 112b, 122 when the PDP 10 is driven. In PDP 10, it is a characteristic view which shows the relationship between the resistance ratio of the 2nd protective film area | region 114b with respect to the 1st protective film area | region 114a, and the quantity of the wall charge to accumulate | store. In PDP10, it is a characteristic view which shows the relationship between the area ratio of the 2nd protective film area | region 114b with respect to the 1st protective film area | region 114a, and a discharge start voltage. FIG. 4 is a process diagram showing processes related to the formation of the protective film 114 of the front panel 11 in the manufacturing process of the PDP 10. It is principal part sectional drawing which shows PDP20 which concerns on Embodiment 2 of this invention. It is principal part sectional drawing which shows PDP30 which concerns on Embodiment 3 of this invention. It is principal part sectional drawing which shows PDP40 which concerns on Embodiment 4 of this invention, and a top view which shows the protective film 414. In PDP40, it is a characteristic view which shows the relationship between the area ratio of the 2nd protective film 414b with respect to the 1st protective film 414a, and a discharge start voltage. It is principal part sectional drawing which shows the conventional PDP500.

Explanation of symbols

10, 20, 30, 40. Plasma display panel 11, 21, 31, 41. Front panel 12. Rear panel 13. Discharge space 112. Display electrode pairs 114, 214, 314, 414. Protective films 114a, 214a, 314a. First protective film regions 114b, 214b, 314b. Second protective film region 414a. First protective film 414b. Second protective films 2001, 2002. Metal mask

Claims (25)

It has a sealed container filled with a discharge gas in the discharge space, and in the sealed container, a display electrode pair is disposed on one side across the discharge space, and a data electrode is disposed on the other side in a direction crossing the display electrode pair, A plasma display panel in which a protective film is formed on the inner surface facing the discharge space in the sealed container, at least in a portion where the display electrode pair is formed,
The protective film includes a first region and a second region that both face the discharge space and have different discharge performances. A dielectric layer is formed between the protective film and the display electrode pair,
The plasma display panel according to claim 1, wherein the first region and the second region are in contact with the dielectric layer in a thickness direction thereof. In the thickness direction of the protective film,
The second region has a shape in which a cross-sectional size in the planar view direction of the protective film gradually decreases from the boundary with the dielectric layer toward the discharge space. 2. A plasma display panel according to 1. A dielectric layer is formed between the protective film and the display electrode pair,
2. The plasma display panel according to claim 1, wherein the second region of the protective film is formed by being laminated on a partial region of the surface of the first region covered with the surface of the dielectric layer. . When viewing the protective film in plan view,
The plasma display panel according to any one of claims 2 to 4, wherein the second region has a spotted or striped shape and is exposed to the discharge space. The plasma display panel according to claim 5, wherein the shape of the second region exposed to the discharge space is any one of a stripe shape, a zigzag shape, a circular shape, an elliptical shape, and a polygonal shape. The plasma display panel according to any one of claims 1 to 6, wherein the thickness of the protective film in the second region is set in a range of 10 nm to 1000 nm. A discharge cell is formed at each location where the display electrode pair and the data electrode intersect three-dimensionally,
The area exposed to the discharge space occupied by the second region in the unit of the discharge cell is set in a range of 10% to 90% with respect to the exposed area of the first region to the discharge space. The plasma display panel according to claim 1, wherein: The first region and the second region in the protective film are formed to include at least one material selected from a metal oxide material group composed of MgO, CaO, BaO, SrO, MgNO, and ZnO. The plasma display panel according to any one of claims 1 to 8, wherein the plasma display panel is provided. 10. The plasma display panel according to claim 1, wherein a secondary electron emission coefficient of the second region in the protective film is higher than a secondary electron emission coefficient of the first region. 11. The plasma display panel according to claim 1, wherein, in the protective film, the second region contains more impurities than the first region. The second region in the protective film contains hydrogen atoms in the range of 1 × 10 ¹⁸ atoms / cm ^{3 to} 1 × 10 ²³ atoms / cm ³ as the impurities. 2. A plasma display panel according to 1. The second region of the protective film contains silicon atoms in the range of 1 × 10 ¹⁸ atoms / cm ^{3 to} 1 × 10 ²³ atoms / cm ³ as the impurities. Or the plasma display panel of 12. The plasma display panel according to any one of claims 1 to 13, wherein the second region of the protective film has a first level closer to a conductor in a forbidden band. The first region in the protective film has an electrical insulation property set within a range of 0.01% or more and less than 100% as compared to the second region. A plasma display panel according to claim 1. The plasma display panel according to claim 1, wherein the first region of the protective film has a film density set higher than that of the second region. Forming a display electrode pair on one surface of the first substrate and forming a dielectric layer so as to cover the display electrode pair;
Forming a protective film to cover the surface of the dielectric layer;
In a state where the protective film side faces the second substrate on which the data electrode is formed and the display electrode pair and the data electrode intersect with each other, a discharge space is provided between the first substrate and the first electrode. And placing the substrate facing each other and sealing the outer peripheral portion,
In the step of forming the protective film, the protective film is formed from a first region and a second region that both face the discharge space and have different discharge performances. . The method for manufacturing a plasma display panel according to claim 17, wherein in the step of forming the protective film, the first region and the second region are formed in contact with the dielectric layer. In the step of forming the protective film,
A first region forming substep for forming the first region so as to cover the surface of the dielectric layer;
The method for manufacturing a plasma display panel according to claim 17, further comprising: a second region forming substep in which a second region is stacked and formed in a partial region of the surface of the first region. In the step of forming the protective film,
The protective film is formed in a state in which the second region is exposed to the discharge space when the protective film is viewed in plan with a spotted or striped shape. 19. A method for producing a plasma display panel according to 19. The method for manufacturing a plasma display panel according to claim 20, wherein the shape of the second region exposed to the discharge space is any one of a stripe shape, a zigzag shape, a circular shape, an elliptical shape, and a polygonal shape. In the step of forming the protective film, the first region and the second region are at least one selected from the group of metal oxide materials composed of MgO, CaO, BaO, SrO, MgNO, and ZnO. The method for manufacturing a plasma display panel according to any one of claims 17 to 21, wherein the method includes a material. The plasma display according to any one of claims 17 to 22, wherein in the step of forming the protective film, the second region is formed in a state containing more impurities than in the formation of the first region. Panel manufacturing method. 24. The plasma according to claim 23, wherein in the step of forming the protective film, the formation of the second region is performed while introducing an impurity gas when forming the film using the at least one material. Display panel manufacturing method. 25. In the step of forming the protective film, in the formation of the second region, at least one selected from hydrogen, silicon, and chromium is included in the region. Of manufacturing a plasma display panel.

Images