JP2005308548A - Probe and probe card - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To highly accurately and efficiently measure high frequency electric characteristics of a semiconductor integrated circuit element of a wafer state or a bare chip state. <P>SOLUTION: A probe is composed of a support part 23 attached to and detached from attaching parts 10 and 14 formed on an attaching pedestal 2, an arm part 24 for integrally forming the support part 23 on one end side, a first contact part 25 contacted on an electrode 5a of the side of the semiconductor integrated circuit 5 by facing the other end side of the arm part 24 with the support part 23 to be integrally projected and formed, and a second contact part 26 contacted on a measuring electrode 18 of the side of a measuring substrate 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a probe suitably used for measuring electrical characteristics, particularly high-frequency electrical characteristics, of a semiconductor integrated circuit element in a wafer state or a bare chip state, and a probe card including the probe.

  In various mobile devices such as electronic devices such as personal computers, mobile phones, video devices, and audio devices, miniaturization and weight reduction, multi-functionality, high functionality, etc. have been achieved, and the semiconductor integrated circuit elements to be mounted are extremely high. Strict downsizing and high-precision high-frequency characteristics are required. Semiconductor integrated circuit elements are generally supplied in a state of being sealed with an epoxy-based insulating synthetic resin, ceramic, or the like, but they are also supplied in a bare chip state by adopting so-called bare chip mounting technology that meets the demand for miniaturization. It has come to be.

  In semiconductor integrated circuit elements, measurement of high-frequency electrical characteristics in a wafer state or a bare chip state is performed using various probe cards. As a probe card, for example, a coplanar type probe card having a coplanar structure, a blade type probe card in which a microstrip transmission structure is formed on a substrate such as a ceramic substrate and a short needle probe is projected from a signal line (see, for example, Patent Document 1) A terminal for forming an electrical circuit on a flexible insulating film such as a coaxial probe card (see, for example, Patent Document 2) or a polyimide or the like by extending the tip of the signal line of the coaxial cable to be in contact with the electrode is provided. A membrane probe card (see, for example, Patent Document 3) is provided.

  Note that the probe device is not intended for a semiconductor integrated circuit element in a wafer state or a bare chip state, and is a device for measuring electrical characteristics after being assembled into a package. Provided (see, for example, Patent Document 4 and Patent Document 5). None of these probe devices are applied to a semiconductor integrated circuit element in a wafer state or the like in which a large number of electrodes are formed at a minute pitch of 100 μm or less.

JP-A-7-122602 Japanese National Patent Publication No. 8-510553 JP 2001-13168 A Japanese Patent Laid-Open No. 10-50440 Japanese Patent Laid-Open No. 11-162605

  By the way, in a probe card, since a large number of electrodes are used to measure the electrical characteristics of a semiconductor integrated circuit element formed at a small pitch, a large number of electrodes arranged at a small pitch according to the electrode pitch are used. Must have a probe. In the probe card, impedance matching with a semiconductor integrated circuit element is achieved by providing passive element parts such as a chip capacitor, a chip coil, or a decoupling capacitor between a power source and the ground in order to measure high-frequency electrical characteristics. Configured as follows. Furthermore, in the probe card, it is preferable that the impedance matching adjustment operation can be performed by adopting a structure in which passive element parts and signal lines can be exchanged or moved.

  Also, in the probe card, in order to measure the high-frequency electrical characteristics with high accuracy, each probe contacting the electrode and the measurement electrode is shortened to reduce the deterioration of the high-frequency signal input to and output from these probes. Need to be configured. In a probe card, for example, when used for an integrated circuit element for high frequency amplification, oscillation may occur if the impedance component loaded via the probe on the ground or power supply electrode increases. In a conventional probe card, a tungsten probe of about 10 mm is used, and high-precision high-frequency electrical characteristics cannot be measured.

  In the probe card, as described in Patent Document 3 described above, the probe is configured so that the oxide film layer formed on the surface of the electrode is scraped (scrubbed) and contacted in a good state. In the probe card, the tip portion of the probe is worn with use, so that the scrub action is not sufficiently performed. In the probe card, the probe may be bent or damaged by mistake. In the probe card, since a large number of probes are precisely positioned and fixed with respect to the base, even if one probe is replaced, it is necessary to replace the entire probe, which increases the measurement cost. There was a problem such as.

  The conventional coplanar probe card is effective up to the high frequency band as a transmission line in which the coplanar transmission line is controlled in impedance, but the above-described impedance matching electronic component cannot be provided in the vicinity of the measurement unit. In addition, the coplanar probe card is not practical because it is difficult to bring the probe into contact with a large number of electrodes provided at a minute pitch at the same time and there is a problem that the measurement efficiency is poor.

  The blade-type probe card described in Patent Document 1 has a limit in the thickness of the insulating substrate that supports the probe, and is difficult to apply to a semiconductor integrated circuit element in which a large number of electrodes are arranged at a minute pitch. The blade-type probe card makes it difficult to bring the probe into contact with the electrode group at the same time.For example, it is possible to perform measurement while moving the probe, but the measurement efficiency deteriorates and high-precision measurement can be performed. Disappear.

  The coaxial probe card described in Patent Document 2 is also difficult to apply to a semiconductor integrated circuit element in which a large number of electrodes are arranged at a minute pitch because the outer diameter of the coaxial probe is large.

  The membrane probe card described in Patent Document 3 can be applied to a semiconductor integrated circuit element in which a large number of electrodes are arranged at a minute pitch, and an impedance matching electronic component can be provided in the vicinity of the measurement unit. It has the characteristic that it is. However, since the impedance matching electronic component is fixed in such a membrane probe card, it is not possible to perform an adjustment operation of the matching circuit to determine an optimum constant by appropriately replacing and moving the electronic component. The membrane probe card is considered expensive, for example, by mounting a large number of electronic components in advance and combining them appropriately, but it is expensive. Even in a membrane probe card, probes cannot be exchanged individually.

  Accordingly, an object of the present invention is to provide a probe and a probe card that enable high-frequency electrical characteristics to be measured with high accuracy and efficiency with respect to a semiconductor integrated circuit element in a wafer state or a bare chip state. .

  A probe according to the present invention that achieves the above-described object is provided in a probe card for measuring the electrical characteristics of a semiconductor integrated circuit element in a wafer state or a bare chip state, and has a measurement electrode on a measurement substrate side and a semiconductor integrated circuit element side facing each other. The high-frequency signal is input / output by connecting each of the electrodes. The probe includes a support part that is attached to and detached from the attachment part formed on the attachment base of the probe card, an arm part that integrally forms the support part on one end side, and a support part on the other end side of the arm part. A first contact portion that is integrally formed so as to protrude and abut against the electrode on the semiconductor integrated circuit element side, and opposite to the first contact portion, is opposed to the support portion on the other end side of the arm portion. And a second contact portion that is formed so as to protrude and come into contact with the measurement electrode on the measurement substrate side.

  In the probe, the first contact portion and the second contact portion are mounted on the mounting base of the probe card and the high frequency electrical characteristics of the semiconductor integrated circuit element in the wafer state or bare chip state are measured using the probe card. Are elastically displaced in a direction approaching each other between the semiconductor integrated circuit element and the measurement substrate that are arranged to face each other, and abut against the opposing electrode and the measurement electrode by the accumulated elastic force, respectively. In the probe, the first contact portion and the second contact portion are brought into contact with the opposing electrode and the measurement electrode with a shortened electrical length substantially equal to the facing distance, thereby reducing the impedance. Therefore, the level reduction of the high frequency signal is suppressed.

  In the probe, when the first contact portion and the second contact portion come into contact with the electrode and the measurement electrode, the oxide film layer formed on the surface of the electrode is scraped by the elastic force so as to make a good contact. Become. In the probe, when the first contact portion and the second contact portion are worn away at the tip portion and the scraping function of the oxide film layer of the electrode is deteriorated or damaged, the probe card mounting base is individually provided. Is removed and replaced.

  In the probe, it is formed by microfabrication technology together with the mounting base and attached to the mounting base, so that the semiconductor integrated circuit element formed by arranging each electrode at a minute pitch can be reliably contacted with each electrode. Thus, the high frequency characteristics can be measured.

  In addition, a probe card according to the present invention that achieves the above-described object includes an attachment base, a measurement substrate, and a large number of probes. The probe card is provided with a plurality of probe mounting portions formed on the mounting base at the same pitch as the electrodes of the semiconductor integrated circuit element. In the probe card, a large number of measurement electrodes respectively opposed to the respective electrodes of the semiconductor integrated circuit element are formed on a measurement substrate. The probe card includes a large number of probes respectively opposed to a large number of electrodes provided on a semiconductor integrated circuit element with a predetermined pitch.

  The probe card has a support part in which each probe is attached to and detached from the probe attachment part of the attachment base, an arm part integrally formed on one end side, and a support part on the other end side of the arm part. The first contact portion that is integrally projected and abuts against the electrode on the semiconductor integrated circuit element side, and is opposed to the support portion on the other end side of the arm portion so as to face the first contact portion. The second contact portion is formed so as to protrude and contact the measurement electrode on the measurement substrate side. In the probe card, each probe is attached to and detached from each probe mounting portion of the mounting base, and connects between the electrode on the semiconductor integrated circuit element side and the measurement electrode on the measurement substrate side.

  In the probe card, the first contact portion and the second contact portion approach each other between the semiconductor integrated circuit element and the measurement substrate by being combined with the measurement substrate facing the semiconductor integrated circuit element. And is brought into contact with the electrode on the semiconductor integrated circuit element side and the measurement electrode on the measurement substrate side. In the probe card, each probe connecting the measurement electrode provided on the measurement substrate and the electrode provided on the semiconductor integrated circuit element measures the electrical characteristics of the semiconductor integrated circuit element by inputting and outputting a high frequency signal. .

  In the probe card, each probe contacts the first contact portion and the second contact portion with an electrical length substantially equal to the facing distance between the electrode of the semiconductor integrated circuit element facing the first contact portion and the measurement electrode of the measurement substrate. Therefore, the impedance is lowered to suppress the decrease in the level of the high frequency signal, and the electrical characteristics of the semiconductor integrated circuit element are measured with high accuracy. In the probe card, passive element parts for driving the semiconductor integrated circuit elements are mounted on the measurement board, so these passive element parts are placed close to the measurement part to suppress the level drop of the high frequency signal. Is done. In the probe card, an impedance matching adjustment operation is performed by exchanging or moving passive element components on the measurement board.

  In the probe card, each probe is formed on the surface of the electrode by elastic force when contacting the electrode of the semiconductor integrated circuit element facing the first contact portion and the second contact portion and the measurement electrode of the measurement substrate. The oxide film layer is scraped to come into contact in a good state. In the probe card, each probe is combined with a mounting base with a support portion being detachable. Therefore, in the probe card, for example, the first contact portion and the second contact portion have a function of scraping off the oxide film layer of the electrode due to wear of the tip portion, or are bent or damaged for some reason. In this case, only the probe is individually removed from the mounting base and replaced.

  In the probe card, since the mounting base and each probe are small and precisely manufactured by microfabrication technology, each probe is also opposed to a semiconductor integrated circuit element formed by arranging each electrode at a minute pitch. The high-frequency electrical characteristics are measured by reliably contacting each electrode.

  As described above in detail, according to the present invention, the first contact portion and the second contact portion elastically displaced between the semiconductor integrated circuit element and the measurement substrate have an electrical length between the measurement electrode and the electrode. By shortening the length and shortening the impedance to ensure connection, it is possible to measure the electrical characteristics of the semiconductor integrated circuit element with high accuracy while suppressing a decrease in the level of the high-frequency signal. According to the present invention, since one probe can be attached to and detached from the mounting base one by one, it is possible to perform maintenance by replacing only the probe having a reduced function, and a high-precision electrical circuit is achieved with a reduction in cost. It becomes possible to measure the characteristics.

  Hereinafter, a probe card 1 shown in the drawings as an embodiment of the present invention will be described in detail. As shown in FIGS. 1 and 2, the probe card 1 includes an attachment base 2, a measurement substrate 3, and a large number of probes 4, and uses a lithography technique, an electroforming technique, or a plating technique. It is manufactured by MEMS (Micro Electro Mechanical System) technology for manufacturing a fine-shaped electric movable member. The probe card 1 is sequentially installed one by one with respect to a large number of semiconductor integrated circuits 5 in a so-called wafer state formed on an opposing main surface of a wafer supplied by an appropriate handling device or the like while being installed in a measurement main body device, for example. Appropriate measurement and inspection of the operation confirmation or high-frequency electrical characteristics are performed. Needless to say, the probe card 1 can be applied to a semiconductor integrated circuit element mounted on an appropriate holding member.

  The mounting base 2 is composed of a lower base member 6 and an upper base member 7 which are formed in a rectangular frame shape in a vertically symmetrical shape using, for example, an insulating synthetic resin material such as CFR (Carbon Fiber Reinforced Plastics), The entirety constituting the rectangular measurement space 8 is formed in a rectangular frame shape. The mounting base 2 forms the measurement space 8 with an opening size slightly larger than the outer shape of each semiconductor integrated circuit 5, and details will be described later in the measurement space 8 as shown in FIG. Depending on the structure, a large number of probes 4 are supported on each side in a cantilevered state, and the contact portions of these probes 4 are protruded to form the probe block body A.

  The measurement base 3 is combined with the mounting base 2 so as to close the ceiling of the measurement space 8. The probe block body A and the measurement board 3 are combined by stacking and combining the lower base member 6, the upper base member 7 and the measurement board 3 with each other positioned in this order, and the four corners are coupled by the coupling members 9 described later. By doing so, the probe card 1 is integrated. In the probe card 1, the supplied semiconductor integrated circuit 5 on the wafer faces the measurement substrate 3 on the open bottom surface of the measurement space 8.

  As shown in FIG. 2, the lower base member 6 is formed with a large number of first probe mounting grooves 10 that are opened across the upper surface and the inner peripheral surface on each side. Each of the first probe mounting grooves 10 has the same number and the pitch of the electrodes 5a formed on each side surface portion of each semiconductor integrated circuit 5, more specifically, the plurality of electrodes 5a provided on the opposite side surface portions. Are formed side by side in the width direction on each side of the lower base member 6 with the same pitch.

  Each of the first probe mounting grooves 10 has a horizontal mounting groove portion 11 opened to the inner peripheral surface and the upper surface of the lower base member 6, and is connected to the base end side of the mounting groove portion 11 and opened to the upper surface. It is constituted by two parts of the retaining groove 12 that is slightly deeper than the mounting groove 11. Each first probe mounting groove 10 has a mounting groove portion 11 having a groove width equal to the thickness of the probe 4, and the probe 4 is mounted by fitting the lower part thereof in a press-fit state as will be described in detail later. . As shown in FIG. 4, each first probe mounting groove 10 has a base end side of the mounting groove portion 11 opened to a horizontal retaining groove portion 12.

  The lower base member 6 is formed with through holes 13 in the thickness direction at predetermined positions at the four corners. The lower base member 6 is penetrated by a coupling member 9 that integrates the upper base member 7 and the measurement substrate 3 into each through hole 13. Although not shown, the lower base member 6 is formed with positioning convex portions at predetermined positions on the upper and lower main surfaces, for example, and the positioning concave portion formed on the upper base member 7 side and the measurement substrate. 3 are positioned relative to each other by being relatively engaged with the positioning recesses formed in 3. Of course, the positioning structure is not limited to the structure of the positioning convex portion and the positioning concave portion, and may be an appropriate structure in which the lower base member 6 and the upper base member 7 are precisely aligned.

  As shown in FIG. 2, the upper base member 7 is also formed with a large number of second probe mounting grooves 14 that are open to the lower surface and the inner peripheral surface on each side. The second probe mounting grooves 14 are formed at the same number and the same pitch on each side so as to form a pair with the first probe mounting grooves 10 of the lower base member 6 described above. That is, the second probe mounting grooves 14 are arranged in the width direction on the respective sides of the upper base member 7 with the same number and the same pitch as the electrodes 5a formed in the semiconductor integrated circuits 5. Are formed side by side. Each of the second probe mounting grooves 14 is also provided with a horizontal mounting groove 15 that opens on the inner peripheral surface of the upper base member 7, and is connected to the base end side of each mounting groove 15, is open to the upper surface, and is open from the mounting groove 15. It is constituted by two portions of the slightly deep retaining groove portion 16.

  In each second probe mounting groove 14, the mounting groove portion 15 is formed with the same shape as the mounting groove portion 11 and the retaining groove portion 12 constituting the second probe mounting groove 10 on the lower base member 6 side. That is, each second probe mounting groove 14 also has a groove width equal to the thickness of the probe 4 in the mounting groove 15, and the probe 4 is fitted into the upper portion thereof in a press-fit state as will be described in detail later. Install by.

  In each of the second probe mounting grooves 14, in a state where the upper base member 7 and the lower base member 6 are positioned and combined, the opposing mounting groove portions 15 are the mounting groove portions 11, and the retaining groove portions 16 are the retaining groove portions 12. And a probe mounting groove. The upper base member 7 also has through holes 17 in the thickness direction at predetermined positions at the four corners. Each through-hole 17 is formed with a counterbore having a large diameter on the bottom surface side, and a coupling member 9 that integrates the lower base member 6 and the measurement substrate 3 is penetrated.

  The mounting base 2 includes the first probe mounting groove 10 and the second probe mounting groove 14 that define the positional accuracy of the probe 4 by manufacturing the above-described lower base member 6 and upper base member 7 by lithography. The probe mounting grooves are formed with a dimensional accuracy of, for example, a few um for each groove width, height, or mutual pitch. Note that the mounting base 2 is expensive when the entire upper base member 7 and lower base member 6 are manufactured by lithography technology. For example, the first probe mounting groove requiring dimensional accuracy is required. The cost may be reduced by forming only the first and second probe mounting grooves 14 and the positioning portion by lithography and forming other portions by cutting or pressing.

  As described above, the mounting base 2 has the first probe mounting groove 10 formed in the lower base member 6 and the second probe mounting groove 14 formed in the upper base member 7 so that the lower base member 6 and the upper base member 6 In the state where the base member 7 is combined, the first probe mounting groove 10 and the second probe mounting groove 14 form the probe mounting groove together. However, the structure is not limited thereto. In the mounting base 2, for example, a probe mounting groove is formed only on the lower base member 6 side, and the upper base member 7 functions as a lid on the upper edge of the probe 4 fitted in the probe mounting groove. You may make it press.

  The measurement substrate 3 is formed of an organic substrate, a ceramic substrate, or the like, and a large number of measurement electrodes 18 are formed on the lower surface 3a facing the measurement space 8 when combined with the mounting base 2. As shown in FIGS. 2 and 3, an appropriate wiring pattern 19 is formed on the upper surface 3b and an electronic component 20 constituting an impedance matching circuit is mounted on the measurement substrate 3. Although details are omitted, each measurement electrode 18 on the lower surface 3 a side is connected to the wiring pattern 19 on the upper surface 3 b side by a through hole 21. The measurement substrate 3 is also formed with through holes 22 in the thickness direction at predetermined positions at the four corners, and the coupling member 9 that integrates the lower base member 6 and the upper base member 7 is passed therethrough.

  The measurement electrodes 18 are formed on the measurement substrate 3 with the same number and the same pitch as the electrodes 5a formed on each semiconductor integrated circuit 5. The measurement electrode 18 is positioned on the same axis as the opposing electrode 5 a on the semiconductor integrated circuit 5 side in a state where the semiconductor integrated circuit 5 faces and faces the measurement space 8.

  Although not shown in the wiring pattern 19, an appropriate connection pad 19 a for electrically connecting the electronic component 20 is formed, and a terminal portion (not shown) for connecting to the measuring apparatus main body is connected to a portion drawn out to the side end portion. Is provided. The wiring pattern 19 may be configured as, for example, a microstrip transmission line that efficiently transmits a high-frequency signal.

  The electronic component 20 is composed of a passive element component such as a chip capacitor or chip coil for impedance matching with the semiconductor integrated circuit 5 or a decoupling capacitor between the power source and the ground. Further, the electronic component 20 may be a control LSI that regulates the operating conditions and measurement conditions of the semiconductor integrated circuit 5, and when detecting the conduction state between the electrodes, the wiring pattern 19 is directly connected to the measurement apparatus main body. In some cases, it may not be necessary to mount it for connection.

  As described above, the measurement substrate 3 is assembled to the mounting base 2 so as to close the measurement space 8 and is opposed to the semiconductor integrated circuit 5, so that the electronic component 20 is brought into close proximity to each electrode 5 a. It is possible to arrange in. Since the measurement board 3 solders the electronic component 20 to the connection pad 19a of the wiring pattern 19 and mounts it on the upper surface 3a, a general electrician removes the electronic component 20 by melting the solder. It is possible. In the measurement board 3, it is possible to easily perform the adjustment operation of the impedance matching by exchanging the electronic component 20 or changing the mounting position to determine the optimum constant of the impedance matching circuit.

  The probe 4 is formed finely and precisely by a lithography technique or an electroforming technique using, for example, a conductive metal thin plate or a thin plate material. As shown in FIGS. 4 and 5, the probe 4 is composed of a support portion 23, an arm portion 24, a first contact portion 25, and a second contact portion 26 that are integrally formed. It has a shape. As described above, the probe 4 has a thickness substantially equal to the groove width of the first probe mounting groove 10 of the lower base member 6 and the second probe mounting groove 14 of the upper base member 7 and is formed to have a thickness of 20 μm to 60 μm. Yes.

  The support portion 23 is based on the spatial shape of the retaining groove portion in the height direction formed by combining the retaining groove portion 12 of the lower base member 6 and the retaining groove portion 16 of the upper base member 7 whose outer dimensions are described above. It consists of a vertically long rectangular portion having a slightly smaller external dimension. The support portion 23 is fitted over the retaining groove portion 12 and the retaining groove portion 16 so that the probe 4 is assembled to the mounting base 2 while being prevented from being detached. Since the support portion 23 has a slightly smaller external dimension than the space shape of the groove portion, the arm portion 24 can be moved in accordance with the elastic displacement operation of the first contact portion 25 and the second contact portion 26 described later. To do.

  The arm portion 24 is a portion that is fitted over the mounting groove portion 11 of the lower base member 6 and the mounting groove portion 15 of the upper base member 7, and the above-described support portion 23 that protrudes in the vertical direction at one end portion. Integrally formed. The arm portion 24 is press-fitted into the mounting groove portion 11 over the substantially entire length of the lower side portion, and is press-fitted into the mounting groove portion 15 at the upper side portion. A first contact portion 25 and a second contact portion 26 are integrally formed on the arm portion 24 so as to face the support portion 23 on the other end side.

  The first contact portion 25 and the second contact portion 26 are vertically symmetrical portions that are projected from the arm portion 24 toward the upper direction and the lower direction, respectively, with a predetermined opening angle and projecting into an arm shape. . As shown in FIG. 4, the first contact portion 25 and the second contact portion 26 are integrally formed with scrub convex portions 25a and 26a on the outer edges (upper edge and lower edge) of the respective leading ends. The first contact portion 25 and the second contact portion 26 have a length from the arm portion 24 to the tip portion of about 0.6 mm to 1.2 mm. Therefore, the 1st contact part 25 and the 2nd contact part 26 have a certain amount of length, and while being deform | transformed with respect to the thickness direction, elastic displacement is also possible also with respect to a height direction.

  The first contact portion 25 and the second contact portion 26 protrude into the measurement space portion 8 as shown in FIGS. 1 and 2 in a state where the probe 4 is attached to the attachment base 2. The first contact portion 25 and the second contact portion 26 are formed so that the opposed tip portions are opposed to each other slightly larger than the thickness of the mounting base 2. The first contact portion 25 and the second contact portion 26 are configured so that the scrub protrusions 25a and 26a are substantially on the same axis as the electrode 5a and the measurement electrode 18 in a state where the semiconductor integrated circuit 5 is positioned and opposed to the measurement space portion 8. Located in.

  The first contact portion 25 and the second contact portion 26 are arms that are slightly larger than the thickness of the mounting base 2 in which the lower base member 6 and the upper base member 7 are laminated with the interval between the scrub protrusions 25a and 26a. The protrusion 24 is formed integrally with the portion 24. The first contact portion 25 and the second contact portion 26 are compressed between the semiconductor integrated circuit 5 and the measurement substrate 3 and approach each other in a state where the semiconductor integrated circuit 5 is positioned facing the measurement space 8. The elastic force is stored by elastic displacement in the direction. In the first contact portion 25 and the second contact portion 26, the scrub convex portion 25 a abuts on the electrode 5 a of the semiconductor integrated circuit 5, and the scrub convex portion 26 a abuts on the measurement electrode 18 on the measurement substrate 3 side to accumulate energy. The contact state is maintained by elastic force.

  The scrub convex portions 25a and 26a have slightly sharp edges, and have a function of scraping the surfaces of the scrub convex portions 25a and 26a in contact with the electrode 5a and the measurement electrode 18. Since the semiconductor integrated circuit 5 is measured in a wafer state, the surface of the electrode 5a is covered with a thin oxide film layer. The scrub protrusions 25a and 26a are formed by scraping off the oxide film layer formed on the surface of the electrode 5a or the measurement electrode 18, so that the first contact portion 25 and the second contact portion 26 face each other. Make sure that the electrical connection to is made.

  In the assembly process of the probe card 1, the probe 4 is first assembled to the lower base member 6. Each probe 4 is press-fitted with the lower part of the arm part 24 into the attachment groove part 11 and the lower part of the support part 23 into the retaining groove part 12 with the first probe attachment groove 10 facing each other. It is. Each probe 4 is retained by fitting the support portion 23 to the retaining groove portion 12, and the arm portions 24 are positioned relative to each other by the mounting groove portion 11 and supported by the lower base member 6 in a cantilever state. The first contact portion 25 and the second contact portion 26 protrude into the measurement space portion 8.

  In the assembly process of the probe card 1, the upper base member 7 is combined with the lower base member 6. When the upper base member 7 is aligned with the lower base member 6, the upper side portion of the probe 4 exposed from the upper surface of the lower base member 6 is fitted into the second probe mounting groove 14. The Each probe 4 is fitted to the retaining groove portion 16 at the upper side portion of the support portion 23 and the mounting groove portion 15 is fitted to the upper side portion of the arm portion 24, so that the lower base member 6 and the upper base member 7 It is sandwiched and supported. In the assembly process of the probe card 1, the lower base member 6 and the upper base member 7 are positioned and combined so that a large number of probes 4 can connect the first contact portion 25 and the second contact portion 26 to each other. A probe block body A that is positioned on the same axis in the vertical direction and protrudes into the measurement space 8 is manufactured.

  In the assembly process of the probe card 1, the measurement substrate 3 is aligned and combined with the upper base member 7 so as to close the measurement space 8. In the assembly process of the probe card 1, as shown in FIG. 4, the coupling member 9 is fitted into the through hole 13 from the bottom surface side of the lower base member 6, and this coupling member 9 is inserted into the through hole 17 of the upper base member 7. The tip is protruded outward from the through hole 22 of the measurement substrate 3 via. In the assembly process of the probe card 1, the measurement board 3 is integrated with the probe block body A by screwing and tightening the nut 27 to the end portion of the coupling member 9 exposed from the measurement board 3 to complete the probe card 1.

  As shown in FIGS. 2 and 3, the probe card 1 is scrubbed by slightly elastically displacing the second contact portion 26 of the probe 4 by being pressed downward by the measurement substrate 3 and accumulating elastic force. The protrusion 26a is imparted with a contact habit with the measurement electrode 18 facing the measurement substrate 3 side. In the probe card 1, a wafer on which a large number of semiconductor integrated circuits 5 are formed in a state where the measurement substrate 3 is electrically connected to the measurement apparatus main body is installed in a measurement space portion. It is installed facing 8. The probe card 1 opposes each electrode 5 a facing the semiconductor integrated circuit 5 in which the first contact portion 25 of each probe 4 faces the measurement space portion 8. The probe card 1 is slightly elastically displaced when the first contact portion 25 is pushed upward by the semiconductor integrated circuit 5, and the scrub protrusion 25 a scrapes off the oxide film layer formed on the surface of the electrode 5 a facing it. Drop and touch.

  In the probe card 1, the electronic component 20 is mounted on the measurement substrate 3 that is combined by closing the measurement space 8, and the second contact portion 26 of the probe 4 and the electronic component 20 are electrically connected at an almost shortest distance. Connected to. Therefore, in the probe card 1, the electrode 5a and the measurement electrode 18 which are opposed to each other by the first contact portion 25 and the second contact portion 26 have an electrical length of about 1.0 mm which is substantially equal to the facing distance. By connecting, the probe 4 having a small inductance component is formed. In the probe card 1, the inductance component of the probe 4 is loaded on the ground electrode and the power supply electrode, and the oscillation operation and electrical characteristics change greatly. For example, the probe card 1 is applied to an integrated circuit for high frequency amplification and has high frequency electrical characteristics. Enable measurement.

  In the probe card 1, the high-frequency electrical characteristics of the semiconductor integrated circuit 5 are measured with high accuracy while suppressing a decrease in the level of the high-frequency signal that is input to and output from the semiconductor integrated circuit 5. In the probe card 1, a predetermined high-frequency signal defined by the electronic component 20 is applied from each probe 4 to the semiconductor integrated circuit 5, whereby high-frequency electrical characteristics are measured. The high-frequency signal is input to the electrode 5a of the semiconductor integrated circuit 5 through the route of the wiring pattern 19-through hole 21-measurement electrode 18-first contact portion 25-second contact portion 26. Is output to the measuring device main body.

  Since the probe card 1 has a structure in which the electronic component 20 is mounted on the upper surface side of the measurement substrate 3 as described above, the electronic component 20 can be moved or replaced relatively easily, and the impedance can be changed. The optimum constant of the matching circuit is determined, and the impedance matching adjustment operation is easily performed. In the probe card 1, the electronic component 20 for driving the semiconductor integrated circuit 5 and the like is arranged and mounted on the measurement substrate 3 at a close position, so that a decrease in the level of the high-frequency signal is suppressed and high-precision measurement can be performed. To be done.

  In the probe card 1, as described above, each probe 4 is attached by press-fitting the support portion 23 and the arm portion 24 into the first probe attachment groove 10 and the second probe attachment groove 11. In the probe card 1, the probe 4 wears, for example, the scrub protrusion 25 a of the first contact portion 25, and the function of scraping off the oxide film layer of the electrode 5 a is lowered to cause a contact failure or the first contact. When the portion 25 or the second contact portion 26 is bent or damaged for some reason, only the probe 4 is replaced.

  The replacement operation of the probe 4 is performed by the reverse process of the assembly process described above, the coupling member 9 is removed, the lower base member 6 and the upper base member 7 are separated, and each probe 4 is moved to the first probe mounting groove 10. After the upper side portion is exposed, the probe 4 to be exchanged is removed by pulling it strongly. The replacement operation of the probe 4 is performed by press-fitting the substitute probe 4 into the corresponding first probe mounting groove 10 and then assembling the lower base member 6, the upper base member 7 and the measurement substrate 3.

  In the probe card 1, it is possible to perform the specific probe 4 by an extremely simple operation, and since the entire replacement is not required, the maintenance cost can be greatly reduced.

  The probe 4 shown in the above-described embodiment includes the first contact portion 25 and the second contact that respectively contact one electrode 5a of the semiconductor integrated circuit 5 and the measurement electrode 18 of the measurement substrate 3 opposed to the electrode 5a. And a portion 26. Some semiconductor integrated circuits 5 are provided with electrodes having the same function on the outer peripheral portion and the inner peripheral side, such as ground electrodes and power supply electrodes. The probe 30 shown in FIG. 6 has the same basic configuration as that of the probe 4 described above, but is opposed to the same functional electrode on the semiconductor integrated circuit 5 side on the arm portion 32 formed integrally with the support portion 31. A first contact portion 33 having a pair of contact portions 33a, 33b is integrally formed, and a second contact portion having a pair of contact portions 34a, 34b facing each contact portion 33a, 33b of the first contact portion 33. The contact part 34 is integrally formed.

  In the probe 30, the first contact portion 33 and the second contact portion 34 protrude into the measurement space portion 8 in a state where the support portion 31 and the arm portion 32 are positioned and attached to the attachment base 2. In the probe 30, the first contact portion 33 comes into contact with the electrode on the outer peripheral side with respect to the same function electrode of the semiconductor integrated circuit 5, and the contact portion 33 b comes into contact with the electrode on the inner side. In addition, the probe 30 is in contact with the measurement electrodes formed on the measurement substrate 3 by the contact portions 34 a and 34 b of the second contact portion 34. Therefore, since the probe 30 performs the measurement of the same function electrode in a lump, the number of probes is reduced to reduce the cost and simplify the structure of the mounting base 4. In addition, although the electrical length of the probe 30 is slightly increased, the contact portions 34a and 34b of the second contact portion 34 may be made one.

  The probe 40 shown in FIG. 7 is used when more identical functional electrodes are provided on the same straight line on the semiconductor integrated circuit 5 side. In the probe 40, a first contact portion 43 including contact portions 43 a, 43 b, 43 c facing the same function electrode on the semiconductor integrated circuit 5 side is integrally formed on an arm portion 42 formed integrally with the support portion 41. At the same time, a second contact portion 44 including contact portions 44a, 44b, and 44c is integrally formed so as to face the contact portions 43a, 43b, and 43c of the first contact portion 43.

  The probe 40 may bend at the tip portion protruding into the measurement space portion 8 because the arm portion 42 has a long axis. Therefore, the probe 40 is integrally formed with the second support portion 45 at the front end portion of the arm portion 42 so as to face the support portion 41, and the second support portion 45 is formed on the opposite side of the mounting base 2. The probe mounting groove is configured to have a doubly supported beam structure. Even if the probe 40 is a long arm portion 42, the probe 40 has a structure in which the first contact portion 43 and the second contact portion 44 face each other between the electrode on the semiconductor integrated circuit 5 side and the measurement electrode on the measurement substrate. Connect them securely.

  The probe card 1 is provided with a positioning structure for positioning and mounting on the measurement main body device, an appropriate connector for performing electrical wiring connection, and the like.

It is a see-through | perspective perspective view of the probe card shown as embodiment. It is a principal part longitudinal cross-sectional view of a probe card. It is a principal part perspective view of a probe card. It is a disassembled perspective view of a probe block body. It is a side view of a probe. It is a side view of the probe shown as 2nd Embodiment. It is a side view of the probe shown as 3rd Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Probe card, 2 Mounting base, 3 Measurement board, 4 Probe, 5 Semiconductor integrated circuit, 6 Lower base member, 7 Upper base member, 8 Measurement space part, 9 Connecting member, 10 1st probe mounting groove, 11 Mounting groove, 12 retaining groove, 14 second probe mounting groove, 15 mounting groove, 16 retaining groove, 18 measurement electrode, 19 wiring pattern, 20 electronic component, 23 support section also 24 arm section, 25 first contact section, 26 2nd contact part, 30 probe, 40 probe

Claims (10)

Provided on a probe card that measures the electrical characteristics of a semiconductor integrated circuit element in a wafer state or a bare chip state, and connects between the measurement electrode on the opposite measurement substrate side and the electrode on the semiconductor integrated circuit element side, respectively. Is a probe that inputs and outputs high-frequency signals,
A support part that is attached to and detached from the attachment part formed on the attachment base of the probe card, an arm part that integrally forms the support part on one end side, and the support part on the other end side of the arm part. A first contact portion that is integrally formed and abuts against the electrode on the semiconductor integrated circuit element side, and is opposed to the support portion on the other end side of the arm portion so as to face the first contact portion. And a second contact portion that is integrally projected and abutted with the measurement electrode on the measurement substrate side,
The first contact portion and the second contact portion are elastically displaced in the direction of approaching each other between the semiconductor integrated circuit element and the measurement substrate disposed opposite to each other, and the electrode and the measurement electrode facing each other. Probes characterized by contacting each other.   The plurality of second contact portions that are located on the same straight line and come into contact with a plurality of electrodes having the same function provided in the semiconductor integrated circuit element are formed integrally with the arm portion. Item 2. The probe according to Item 1.   The arm portion is further extended from a site where the first contact portion and the second contact portion are formed, and a second support portion facing the first support portion is integrally formed at an extended end portion thereof. The probe according to claim 1.   2. The probe according to claim 1, wherein the probe is attached to each attachment portion formed on the attachment base of the probe card so as to be arranged in a thickness direction. By providing a plurality of probes respectively opposed to a plurality of electrodes provided at a predetermined pitch in a semiconductor integrated circuit element in a wafer state or a bare chip state, and by inputting and outputting high-frequency signals through these probes In the probe card for measuring the electrical characteristics of the semiconductor integrated circuit element,
A mounting base provided with a plurality of probe mounting portions formed at the same pitch as each electrode of the semiconductor integrated circuit element;
A plurality of measurement electrodes that are respectively opposed to the respective electrodes of the semiconductor integrated circuit element are formed, and the measurement electrodes that are opposed to each other at the time of measurement are opposed to each other and are installed facing the semiconductor integrated circuit element. A substrate,
Removably attached to each probe mounting portion of the mounting base, and connected between the measurement electrode on the measurement substrate side and the electrode on the semiconductor integrated circuit element side to input / output a high frequency signal. With many probes,
Each probe is attached to and detached from each probe attachment portion of the attachment base, an arm portion integrally formed on one end side, and the support portion on the other end side of the arm portion. A first contact portion that is integrally formed to project and is in contact with the electrode on the semiconductor integrated circuit element side, and the support portion on the other end side of the arm portion facing the first contact portion. Consists of a second contact part that is integrally formed to project and is in contact with the measurement electrode on the measurement substrate side,
At the time of measurement combined with the semiconductor integrated circuit element, the first contact portion and the second contact portion are elastically displaced in a direction in which they approach each other, so that the electrode on the semiconductor integrated circuit element side and the measurement on the measurement substrate side are measured. A probe card that abuts on each electrode.   Each of the probes has the plurality of second contact portions formed integrally with the arm portion, and each of the second contact portions is provided on the same line on the semiconductor integrated circuit element. 6. The probe card according to claim 5, wherein the probe card simultaneously contacts a plurality of electrodes having the same function. A pair of the mounting bases arranged with the semiconductor integrated circuit element interposed therebetween,
Each of the probes further extends the arm part from the formation site of the first contact part and the second contact part, and integrally forms a second support part facing the first support part at the extended end part. The probe card according to claim 5, wherein the first support portion and the second support portion are attached to and detached from the attachment portion of the attachment base. The mounting base is composed of at least a pair of base members that are divided and combined in the horizontal direction, and has a plurality of groove widths substantially equal to the thickness of the support portions of the probes on at least one base member side. Probe mounting grooves are formed,
Each of the probes is press-fitted into the probe mounting groove facing the support portion, and is attached in a state aligned in the thickness direction by being sandwiched by the combined base member. Item 6. The probe card according to Item 5. The probe mounting groove of the mounting base is composed of a mounting groove opening on the inner peripheral surface of the base member, and a retaining groove in the orthogonal direction continuously provided on the base end side of the mounting groove,
The support portion of each probe is press-fitted into the mounting groove portion and held in the thickness direction, and is protruded in a direction perpendicular to the base end side of the support piece portion, and is integrally connected to the support piece portion. The probe card according to claim 8, wherein the probe card includes a retaining piece that is fitted in the retaining groove.   6. The probe card according to claim 5, wherein a circuit or electronic component for driving the semiconductor integrated circuit element, defining measurement conditions for electrical characteristics, or impedance matching is mounted on the measurement substrate.

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