JP2005303187A - Adjusting method of device for inspecting semiconductor laser equipment - Google Patents

Adjusting method of device for inspecting semiconductor laser equipment Download PDF

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JP2005303187A
JP2005303187A JP2004120288A JP2004120288A JP2005303187A JP 2005303187 A JP2005303187 A JP 2005303187A JP 2004120288 A JP2004120288 A JP 2004120288A JP 2004120288 A JP2004120288 A JP 2004120288A JP 2005303187 A JP2005303187 A JP 2005303187A
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semiconductor laser
light intensity
intensity distribution
laser
optical element
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Isao Hayamizu
勲 早水
Masaya Tachiyanagi
昌哉 立柳
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To accurately adjust an optical unit of an inspecting device of a semiconductor laser equipment within a short amount of time. <P>SOLUTION: A beam profiler 7 for measuring a positioning device 2 and an optical power is provided to a fixture 6 for adjusting, and the semiconductor laser device 1 is fixed by the positioning device 2. An X-Y position of a collimating lens is adjusted so that a median point of a direct laser beam emitted from the semiconductor laser device 1 and a parallel beam 11 shaped by the collimating lens 3 is correspondent. An inclination between the positioning device 2 and a collimating lens 3 is adjusted so that an intensity distribution characteristic of the laser beam is symmetric. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体レーザ装置の検査装置における調整に適用され、半導体レーザ装置から出射したレーザ光の強度分布特性を用いて、装置および光学系の調整を行う調整方法に関するものである。   The present invention is applied to adjustment in an inspection apparatus for a semiconductor laser device, and relates to an adjustment method for adjusting an apparatus and an optical system using intensity distribution characteristics of laser light emitted from the semiconductor laser device.

光ディスクのピックアップに利用されている半導体レーザ装置は、内部に半導体レーザ素子と受光素子が搭載されており、半導体レーザ装置の上部にはホログラム素子が搭載されている。半導体レーザ装置から出射されたレーザ光は、特願2003−405854号明細書に記載されているような検査装置上で、コリメートレンズ,アクチュエータを通過し、光ディスク面にて反射して戻り、半導体レーザ装置内部の受光素子にて受光される。この受光部で検出される光信号出力を組み合わせて、再生信号,フォーカスエラー信号,トラッキングエラー信号を生成し、これらを数値化することにより、半導体レーザ装置の良否判定を行っている。   A semiconductor laser device used for picking up an optical disc has a semiconductor laser element and a light receiving element mounted therein, and a hologram element is mounted on the semiconductor laser device. Laser light emitted from the semiconductor laser device passes through a collimating lens and an actuator on an inspection device as described in Japanese Patent Application No. 2003-405854, and is reflected by the optical disk surface to return to the semiconductor laser. Light is received by a light receiving element inside the apparatus. The optical signal output detected by the light receiving unit is combined to generate a reproduction signal, a focus error signal, and a tracking error signal, and the quality of the semiconductor laser device is determined by quantifying them.

次に、従来の半導体レーザ装置の検査装置の調整方法について説明する。   Next, a method for adjusting a conventional inspection apparatus for a semiconductor laser device will be described.

従来の検査装置で用いられるコリメートレンズは、半導体レーザの出射光をビーム整形するように作用し、半導体レーザ装置に対して、X−Y位置,傾きおよび距離が高精度に調整されている必要がある。   The collimating lens used in the conventional inspection apparatus acts to shape the beam emitted from the semiconductor laser, and the XY position, tilt, and distance need to be adjusted with high accuracy with respect to the semiconductor laser apparatus. is there.

コリメートレンズのXY位置あるいは傾きの調整については、コリメートレンズがビーム整形した平行光を、オートコリメータを用いて角度を測定し、半導体レーザ装置に対して傾きがないようにコリメートレンズのXY位置と傾きの調整を行っている。   Regarding the adjustment of the XY position or tilt of the collimator lens, the angle of collimated beam shaped by the collimator lens is measured using an autocollimator, and the XY position and tilt of the collimator lens so that there is no tilt with respect to the semiconductor laser device. Adjustments are being made.

しかし、従来の技術では、オートコリメータは、レーザ光の角度測定はできるが、光軸の中心位置測定ができないため、図6に示すように、半導体レーザ装置1の位置決め装置2が傾いてもコリメートレンズ3の位置で補正することができてしまうことから、光ピックアップ装置と等価な理想の光学ユニットを有する検査装置を構成することが困難であった。したがって、基準の検査装置と所望の相関関係が得られるまでに、大幅な調整時間を要していた。   However, in the conventional technique, the autocollimator can measure the angle of the laser beam, but cannot measure the center position of the optical axis. Therefore, even if the positioning device 2 of the semiconductor laser device 1 is tilted as shown in FIG. Since correction can be performed at the position of the lens 3, it is difficult to configure an inspection apparatus having an ideal optical unit equivalent to the optical pickup apparatus. Therefore, a large adjustment time is required until a desired correlation with the reference inspection apparatus is obtained.

本発明は、前記従来技術の課題を解決し、半導体レーザ装置の検査装置の光学ユニットの調整において、高精度かつ短期間で調整することを可能にする調整方法を提供することを目的とする。   SUMMARY OF THE INVENTION An object of the present invention is to solve the problems of the prior art and to provide an adjustment method that enables high-precision and short-time adjustment in adjustment of an optical unit of an inspection apparatus for a semiconductor laser device.

前記課題を解決するため、本発明の半導体レーザ装置の検査装置における調整方法は、半導体レーザ装置の位置決め装置と、半導体レーザ装置から出射したレーザ光を整形する光学素子を有する半導体レーザ装置の検査装置において、半導体レーザ装置から光学素子を通るレーザ光路延長線上に入射されるレーザ光の光強度分布を測定する光強度測定器を配置する半導体レーザ装置の検査装置の調整方法であって、光学素子をレーザ光路から外して、第1の光強度分布が所望の分布になるように、位置決め装置のレーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程と、光学素子をレーザ光路に入れて、第2の光強度分布が所望の分布になるように光学素子のレーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程とを有することを特徴とする。   In order to solve the above problems, an adjustment method in an inspection apparatus for a semiconductor laser device according to the present invention includes a positioning apparatus for a semiconductor laser device and an inspection apparatus for a semiconductor laser device having an optical element for shaping laser light emitted from the semiconductor laser device. In the method of adjusting a semiconductor laser device inspection apparatus, wherein a light intensity measuring device for measuring a light intensity distribution of laser light incident on a laser light path extension line passing through the optical element from the semiconductor laser device is disposed, Adjusting the position and inclination in a two-dimensional direction in a plane substantially perpendicular to the laser beam of the positioning device so that the first light intensity distribution becomes a desired distribution by removing from the laser optical path; In a two-dimensional direction on a plane substantially perpendicular to the laser beam of the optical element so that the second light intensity distribution becomes a desired distribution, and Characterized by a step of adjusting the can.

ここで、光学素子をレーザ光路から外して、第1の光強度分布がレーザ光の光軸に対して対称な分布になるように位置決め装置のレーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程と、光学素子をレーザ光路に入れて、第2の光強度分布がレーザ光の光軸に対して対称な分布になり、かつ第1の光強度分布の重心と第1の光強度分布の重心とが一致するように、光学素子のレーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程とを有するものであってよい。   Here, the optical element is removed from the laser beam path, and the position in the two-dimensional direction on a plane substantially perpendicular to the laser beam of the positioning device is set so that the first light intensity distribution is symmetric with respect to the optical axis of the laser beam. And the step of adjusting the inclination, the optical element is put in the laser beam path, the second light intensity distribution is symmetric with respect to the optical axis of the laser beam, and the center of gravity of the first light intensity distribution and the first And adjusting the position and inclination of the two-dimensional direction in a plane substantially perpendicular to the laser beam of the optical element so that the center of gravity of the light intensity distribution of the optical element coincides.

また、光学素子をレーザ光路から外して、第1の光強度分布がレーザ光の光軸に対して対称な分布になるように位置決め装置のレーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程と、光学素子をレーザ光路に入れて、第2の光強度分布がレーザ光の光軸に対して対称な分布になり、かつ第1の光強度分布のピークと第1の光強度分布のピークとが一致するように、光学素子のレーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程とを有するものであってもよい。   Further, the optical element is removed from the laser beam path, and the position in the two-dimensional direction on a plane substantially perpendicular to the laser beam of the positioning device is set so that the first light intensity distribution is symmetrical with respect to the optical axis of the laser beam. The step of adjusting the tilt, the optical element is placed in the laser light path, the second light intensity distribution is symmetric with respect to the optical axis of the laser light, and the peak of the first light intensity distribution and the first There may be included a step of adjusting the position and inclination in a two-dimensional direction in a plane substantially perpendicular to the laser beam of the optical element so that the peak of the light intensity distribution matches.

このように、本発明に係わる半導体レーザ装置の検査装置における調整方法により、コリメートレンズがない状態で光強度分布測定器を用いて、半導体レーザ装置から出射したレーザ光の光強度分布を測定し、さらにコリメートレンズをレーザ光の光路に挿入した状態で光強度分布測定器を用いて、レーザ装置から出射したレーザ光の光強度分布を測定し、両者の光強度分布の重心あるいはピーク位置が一致するように、コリメートレンズのX−Y位置(レーザ光と略垂直な平面における2次元方向の位置)を調整し、かつ強度分布の対称性でコリメートレンズの傾きを調整する。   Thus, by the adjustment method in the inspection apparatus of the semiconductor laser device according to the present invention, the light intensity distribution of the laser beam emitted from the semiconductor laser device is measured using the light intensity distribution measuring device without the collimating lens, Furthermore, the light intensity distribution of the laser light emitted from the laser device is measured using a light intensity distribution measuring instrument with the collimating lens inserted in the optical path of the laser light, and the center of gravity or peak position of the light intensity distribution of both coincides. In this manner, the XY position of the collimating lens (the position in the two-dimensional direction in a plane substantially perpendicular to the laser beam) is adjusted, and the inclination of the collimating lens is adjusted by the symmetry of the intensity distribution.

本発明によれば、半導体レーザ装置の検査装置の調整において、強度分布特性からコリメートレンズのX−Y位置と傾きを検知することが可能になる。そのため、検査装置の光学ユニットを、光ピックアップ装置と等価な光学ユニットに容易に高精度で調整することができ、また光学ユニットの調整に要する時間を短縮することができる。   According to the present invention, it is possible to detect the XY position and the tilt of the collimating lens from the intensity distribution characteristic in the adjustment of the inspection device of the semiconductor laser device. Therefore, the optical unit of the inspection apparatus can be easily adjusted with high accuracy to an optical unit equivalent to the optical pickup apparatus, and the time required for adjustment of the optical unit can be shortened.

以下、本発明に係る検査装置の調整方法の実施形態について図面を参照しながら説明する。   Embodiments of an inspection apparatus adjustment method according to the present invention will be described below with reference to the drawings.

図1は半導体レーザ装置の検査装置の構成図であって、半導体レーザ装置の検査装置は、半導体レーザと受光素子とホログラム素子を一体化した半導体レーザ装置1と、半導体レーザ装置1を固定する位置決め装置2と、半導体レーザ装置から出射したレーザ光を平行光に整形するコリメートレンズ3と、アクチュエータ4と、ディスク5とにより構成されている。   FIG. 1 is a configuration diagram of an inspection device for a semiconductor laser device. The inspection device for a semiconductor laser device includes a semiconductor laser device 1 in which a semiconductor laser, a light receiving element, and a hologram element are integrated, and a positioning for fixing the semiconductor laser device 1. The apparatus 2 includes a collimating lens 3 that shapes laser light emitted from the semiconductor laser device into parallel light, an actuator 4, and a disk 5.

本実施形態の検査装置における調整方法について説明する。   An adjustment method in the inspection apparatus of this embodiment will be described.

位置決め装置の傾き調整において、図2に示すように、位置決め装置2を調整用治具6に設置し、理想的な強度分布特性を有する半導体レーザ装置1を固定する。Aの位置に光強度分布を測定するビームプロファイラ7を設置し、半導体レーザを発光させ、第1の光強度分布を測定する。   In adjusting the inclination of the positioning device, as shown in FIG. 2, the positioning device 2 is installed on an adjustment jig 6 and the semiconductor laser device 1 having ideal intensity distribution characteristics is fixed. A beam profiler 7 for measuring the light intensity distribution is installed at the position A, the semiconductor laser is emitted, and the first light intensity distribution is measured.

半導体レーザ装置の位置決め装置が傾いていると、図4に示す強度分布特性8のように対称性のない特性を示す。この強度分布特性が対称性のある強度分布特性9になるように、位置決め装置の傾きを調整する。   When the positioning device of the semiconductor laser device is inclined, a characteristic having no symmetry such as an intensity distribution characteristic 8 shown in FIG. 4 is shown. The inclination of the positioning device is adjusted so that the intensity distribution characteristic becomes a symmetrical intensity distribution characteristic 9.

前記傾きのない状態で半導体レーザ直接のレーザ光を測定し、図5に示すような第1の光強度分布の重心(あるいはピーク)10を測定して記憶しておく。   The laser light directly from the semiconductor laser is measured without the tilt, and the centroid (or peak) 10 of the first light intensity distribution as shown in FIG. 5 is measured and stored.

次に、コリメートレンズ3の調整において、図3に示すように、Bの位置にコリメートレンズ3を設置する。半導体レーザを発光させ、コリメートレンズ3で整形された光が、集光または拡散していない平行光11になるように高さ位置を調整する。   Next, in the adjustment of the collimating lens 3, the collimating lens 3 is installed at the position B as shown in FIG. The height position is adjusted so that the semiconductor laser emits light and the light shaped by the collimating lens 3 becomes parallel light 11 that is not condensed or diffused.

そして、コリメートレンズ3の傾き調整は、平行光11をビームプロファイラ7で測定し、第2の光強度分布を測定する。この第2の光強度分布特性が、図4に示す対称性のある光強度分布特性9になるように調整する。   And the inclination adjustment of the collimating lens 3 measures the parallel light 11 with the beam profiler 7, and measures 2nd light intensity distribution. The second light intensity distribution characteristic is adjusted to be a symmetrical light intensity distribution characteristic 9 shown in FIG.

また、コリメートレンズ3のX−Y位置調整は、第2の光強度分布の重心(ピーク)12が第1の光強度分布の重心(ピーク)10と一致し、かつ強度分布特性が対称性をキープするように調整する。   Further, the XY position adjustment of the collimating lens 3 is such that the centroid (peak) 12 of the second light intensity distribution coincides with the centroid (peak) 10 of the first light intensity distribution, and the intensity distribution characteristics are symmetrical. Adjust to keep.

本発明は、半導体レーザ装置の検査における調整方法および調整装置に適用され、半導体レーザ装置の組立調整装置においても有用である。   The present invention is applied to an adjustment method and an adjustment device in an inspection of a semiconductor laser device, and is useful also in an assembly adjustment device of a semiconductor laser device.

本発明の実施形態を説明するための半導体レーザ装置の検査装置の構成図Configuration diagram of an inspection apparatus for a semiconductor laser device for explaining an embodiment of the present invention 本実施形態の半導体レーザ装置における位置決め装置の調整に係る説明図Explanatory drawing which concerns on adjustment of the positioning device in the semiconductor laser apparatus of this embodiment 本実施形態の半導体レーザ装置におけるコリメートレンズの調整に係る説明図Explanatory drawing which concerns on adjustment of the collimating lens in the semiconductor laser apparatus of this embodiment 本実施形態のビーププロファイラで測定した半導体レーザ装置の光強度分布特性を示す図The figure which shows the light intensity distribution characteristic of the semiconductor laser apparatus measured with the beep profiler of this embodiment 本実施形態のビーププロファイラで測定した半導体レーザ装置の光強度分布の重心を示す図The figure which shows the gravity center of the light intensity distribution of the semiconductor laser apparatus measured with the beep profiler of this embodiment 従来の半導体レーザ装置の検査装置を調整する際の課題に係る説明図Explanatory drawing which concerns on the subject at the time of adjusting the inspection apparatus of the conventional semiconductor laser apparatus

符号の説明Explanation of symbols

1 半導体レーザ装置
2 位置決め装置
3 コリメートレンズ
4 アクチュエータ
5 ディスク
6 調整用治具
7 ビームプロファイラ
8 非対称の光強度分布
9 対称の光強度分布
10 レーザ光直接の光強度分布の重心
11 平行光
12 平行光の光強度分布の重心
DESCRIPTION OF SYMBOLS 1 Semiconductor laser apparatus 2 Positioning apparatus 3 Collimating lens 4 Actuator 5 Disc 6 Adjustment jig 7 Beam profiler 8 Asymmetric light intensity distribution 9 Symmetric light intensity distribution 10 Center of gravity 11 of direct light intensity distribution of laser light Parallel light 12 Parallel light Centroid of light intensity distribution

Claims (3)

半導体レーザ装置の位置決め装置と、前記半導体レーザ装置から出射したレーザ光を整形する光学素子を有する半導体レーザ装置の検査装置において、前記半導体レーザ装置から前記光学素子を通るレーザ光路延長線上に入射されるレーザ光の光強度分布を測定する光強度測定器を配置する半導体レーザ装置の検査装置における調整方法であって、
前記光学素子を前記レーザ光路から外して、第1の光強度分布が所望の分布になるように前記位置決め装置の前記レーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程と、
前記光学素子を前記レーザ光路に入れて、第2の光強度分布が所望の分布になるように前記光学素子の前記レーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程とを有することを特徴とする半導体レーザ装置の検査装置における調整方法。
In a semiconductor laser apparatus positioning apparatus and a semiconductor laser apparatus inspection apparatus having an optical element for shaping laser light emitted from the semiconductor laser apparatus, the semiconductor laser apparatus is incident on a laser light path extension line passing through the optical element. An adjustment method in an inspection apparatus of a semiconductor laser device in which a light intensity measuring device for measuring a light intensity distribution of laser light is arranged,
Removing the optical element from the laser light path and adjusting the position and inclination of the positioning device in a two-dimensional direction in a plane substantially perpendicular to the laser light so that the first light intensity distribution becomes a desired distribution; ,
Placing the optical element in the laser beam path and adjusting the position and inclination of the optical element in a two-dimensional direction in a plane substantially perpendicular to the laser beam so that the second light intensity distribution becomes a desired distribution; A method of adjusting an inspection apparatus for a semiconductor laser device, comprising:
前記光学素子を前記レーザ光路から外して、前記第1の光強度分布が前記レーザ光の光軸に対して対称な分布になるように、前記位置決め装置の前記レーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程と、
前記光学素子を前記レーザ光路に入れて、第2の光強度分布が前記レーザ光の光軸に対して対称な分布になり、かつ前記第1の光強度分布の重心と前記第1の光強度分布の重心とが一致するように、前記光学素子の前記レーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程とを有することを特徴とする請求項1記載の半導体レーザ装置の検査装置における調整方法。
2 in a plane substantially perpendicular to the laser beam of the positioning device so that the optical element is removed from the laser beam path and the first light intensity distribution is symmetric with respect to the optical axis of the laser beam. Adjusting the position and inclination in the dimensional direction;
The optical element is placed in the laser optical path, and the second light intensity distribution is symmetric with respect to the optical axis of the laser light, and the center of gravity of the first light intensity distribution and the first light intensity 2. The semiconductor laser device according to claim 1, further comprising a step of adjusting a position and inclination of a two-dimensional direction in a plane substantially perpendicular to the laser beam of the optical element so that a center of gravity of the distribution coincides. Adjustment method in the inspection apparatus.
前記光学素子を前記レーザ光路から外して、前記第1の光強度分布が前記レーザ光の光軸に対して対称な分布になるように、前記位置決め装置の前記レーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程と、
前記光学素子を前記レーザ光路に入れて、第2の光強度分布が前記レーザ光の光軸に対して対称な分布になり、かつ前記第1の光強度分布のピークと前記第1の光強度分布のピークとが一致するように、前記光学素子の前記レーザ光と略垂直な平面における2次元方向の位置および傾きを調整する工程とを有することを特徴とする請求項1記載の半導体レーザ装置の検査装置における調整方法。
2 in a plane substantially perpendicular to the laser beam of the positioning device so that the optical element is removed from the laser beam path and the first light intensity distribution is symmetric with respect to the optical axis of the laser beam. Adjusting the position and inclination in the dimensional direction;
The optical element is placed in the laser optical path, and the second light intensity distribution is symmetric with respect to the optical axis of the laser light, and the peak of the first light intensity distribution and the first light intensity 2. The semiconductor laser device according to claim 1, further comprising a step of adjusting a position and inclination of a two-dimensional direction in a plane substantially perpendicular to the laser beam of the optical element so that a distribution peak coincides. Adjustment method in the inspection apparatus.
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