JP2005303023A - Semiconductor device, electro-optical device, integrated circuit and electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can obtain an N-channel and P-channel thin film transistor having high performance by alleviating the limit of the degree of freedoms in the circuit design of a thin film transistor. <P>SOLUTION: The method of manufacturing the semiconductor device includes a starting point forming step of forming a plurality of starting points 125 to become the starting points in the case of crystallizing a semiconductor film on a substrate 11, a semiconductor film forming process of forming the semiconductor film 133 on the substrate in which the starting point is formed, a heat treating process of heat treating the semiconductor film and forming a plurality of silicon substantially single crystal gains which set the plurality of the starting points 125 as approximate centers, and a step of patterning the semiconductor film. In the patterning step, the channel forming region 135N of the n-channel thin film transistor is formed on the silicon substantially single crystal grains so as not to include the starting points 125 and their peripheries, and the channel forming region 135P of the p-channel thin film transistor is formed on the silicon single crystal grains. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a semiconductor device, and a semiconductor device, an electro-optical device, an integrated circuit, and an electronic device manufactured by the manufacturing method.

  In an electro-optical device such as a liquid crystal display device or an organic EL (electroluminescence) display device, pixel switching is performed using a thin film circuit including a thin film transistor as a semiconductor element. In a conventional thin film transistor, an active region such as a channel formation region is formed using an amorphous silicon film. A thin film transistor in which an active region is formed using a polycrystalline silicon film has also been put into practical use. By using a polycrystalline silicon film, electrical characteristics such as mobility are improved as compared with the case of using an amorphous silicon film, and the performance of the thin film transistor can be improved.

  In order to further improve the performance of the thin film transistor, a technique for forming a semiconductor film made of large crystal grains and preventing a crystal grain boundary from entering the channel formation region of the thin film transistor has been studied. For example, a technique has been proposed in which a fine hole is formed on a substrate, and a semiconductor film is crystallized using the fine hole as a starting point for crystal growth to form a crystal grain of silicon having a large particle diameter. Such a technique is disclosed in, for example, Japanese Patent Application Laid-Open No. 11-87243 (Patent Document 1), document “Single Crystal Thin Film Transistors; IBM TECHNICAL DISCLOSURE BULLETIN Aug. 1993 pp257-258”, and document “Advanced”. Excimer-Laser Crystallization Techniques of Si Thin-Film For Location Control of Large Grain on Glass; R.Ishihara et al., Proc.SPIE 2001, vol.4295 pp14-23 ”(Non-patent Document 2) .

  Furthermore, in the method using the micropores, it is possible to realize superior characteristics by forming the thin film transistor at a position in the crystal grain that does not include the micropore, rather than forming the thin film transistor on the micropore. For example, it is reported in the document “Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position in a Location-Controlled Grain” (Non-Patent Document 3).

By forming a thin film transistor using a silicon film having a large crystal grain size formed using these techniques, a crystal grain boundary is prevented from entering one thin film transistor formation region (particularly, a channel formation region). Is possible. As a result, a thin film transistor having excellent electrical characteristics such as mobility can be realized.
JP-A-11-87243 "Single Crystal Thin Film Transistors", IBM TECHNICAL DISCLOSURE BULLETIN Aug. 1993 pp257-258 `` Advanced Excimer-Laser Crystallization Techniques of Si Thin-Film For Location Control of Large Grain on Glass '', R.Ishihara et al., Proc.SPIE 2001, vol.4295, pp14-23 `` Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position in a Location-Controlled Grain '', Vikas Rana et al., AM-LCD 03, pp17-20

  By the way, when a circuit of an electro-optical device such as a liquid crystal display device or an organic EL (electroluminescence) display device is formed using a thin film transistor as a semiconductor element, its circuit function is improved and the product is downsized. As this progresses, improvement in the degree of integration of circuits using thin film transistors is required. However, in the method for forming a thin film transistor using the fine holes, it is necessary to arrange the thin film transistors so as not to include the fine holes that are the starting points of crystal growth, so that there is a degree of freedom in terms of circuit design, in particular, arrangement (layout). This makes it difficult to improve the integration of circuits using thin film transistors.

  Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor device that allows a high degree of integration of thin film transistors, with a limited degree of freedom in circuit design in the formation of thin film transistors using micro holes. To do.

In order to achieve the above object, the present invention provides a method of manufacturing a semiconductor device in which a thin film transistor is formed using a semiconductor film on an insulating substrate having at least one surface, and the semiconductor film is crystallized on the substrate. A starting point forming step for forming a plurality of starting point portions to be starting points, a semiconductor film forming step for forming a semiconductor film on a substrate on which the starting point portions are formed, and a heat treatment on the semiconductor film, and each of the plurality of starting point portions A heat treatment step for forming a plurality of substantially single crystal grains having a substantially central portion, a patterning step for patterning a semiconductor film to form a transistor region to be a source region, a drain region, and a channel formation region, and a gate over the transistor region An element for forming an N-channel thin film transistor and a P-channel thin film transistor by forming an insulating film and a gate electrode to form a thin film transistor Includes a forming step, a,
In the patterning step, an N channel thin film transistor is formed on the substantially single crystal grain so as not to include the starting portion, and a P channel thin film transistor is formed on the substantially single crystal grain.

  According to the above method, high-performance substantially single crystal grains are formed as a semiconductor film starting from the starting portion, but the N-channel thin film transistor is formed so as not to include this starting portion, so that excellent characteristics can be realized. In addition, since the P-channel thin film transistor is hardly affected by defects contained in the substantially single crystal grains, it is formed at an arbitrary position on the substantially single crystal. Therefore, at least for the P-channel thin film transistor, it is possible to dispose the thin film transistor without considering the position of the starting point.

  The “starting portion” is a starting point in crystal growth, and is a portion where crystals of substantially single crystal grains grow from the starting portion by heat treatment.

  The “semiconductor film” is not limited and includes, for example, a polycrystalline semiconductor film and an amorphous semiconductor film.

  The “substantially center” does not mean geometrically the center, but means that it is located in the middle of a single crystal grain immediately after growth because it is the starting point of crystal growth as described above.

  The “substantially single crystal grain” refers to a grain that does not contain irregular grain boundaries, although it can contain regular grain boundaries (corresponding grain boundaries) such as Σ3, Σ9, and Σ27.

  In addition, the “starting portion” is, for example, a recess formed in the substrate. This is because if it is formed on the recess, crystal growth occurs from the bottom of the recess due to the heat treatment process. At this time, the diameter of the recess is preferably equal to or slightly smaller than the diameter of one grain boundary of the polycrystalline semiconductor.

  The heat treatment step is preferably performed by laser irradiation. This is because laser irradiation facilitates the growth of substantially single crystal grains by efficiently supplying energy to a part of the semiconductor film and melting only part of the semiconductor film.

  The present invention is also a semiconductor device including an N-channel thin film transistor and a P-channel thin film transistor formed using a semiconductor film formed on a substrate, and the semiconductor film includes a plurality of semiconductor films provided on the substrate. A plurality of substantially single crystal grains formed starting from a starting portion; among the thin film transistors, an N-channel thin film transistor is formed on the substantially single crystal grains so as not to include the starting portion; It is also a semiconductor device formed on substantially single crystal grains. The semiconductor device is manufactured by, for example, the above-described manufacturing method of a semiconductor device, and an N-channel thin film transistor does not include a starting portion, so that a thin film transistor having excellent characteristics is realized. Since it is formed above, it is also excellent in characteristics and can be formed at an arbitrary position on a substantially single crystal grain, so that there are few restrictions on the arrangement of the P-channel thin film transistor. As a result, from the viewpoint of circuit design using thin film transistors, the degree of freedom in arrangement (layout) of thin film transistors is increased, and high integration is possible.

  Here, the starting portion is preferably a recess formed in the substrate. This is because if it is formed on the recess, crystal growth occurs from the bottom of the recess due to the heat treatment process. At this time, the diameter of the recess is preferably equal to or slightly smaller than the diameter of one grain boundary of the polycrystalline semiconductor.

  Next, preferred embodiments for carrying out the present invention will be described with reference to the drawings.

<First embodiment>
<Configuration>
Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  The manufacturing method according to this embodiment includes (1) a step of forming a microhole on a substrate as a starting point for crystallization of a silicon film, and (2) a step of growing and forming silicon crystal grains from the microhole. And (3) forming a thin film transistor using a silicon film containing the silicon crystal grains. Hereinafter, each process will be described in detail.

(1) Micropore forming step As shown in FIG. 1A, a silicon oxide film 121 as a base insulating film is formed on a glass substrate 11. The film thickness is, for example, about 200 nm. Next, a silicon oxide film having a thickness of 550 nm is formed as the first insulating film 122 on the base insulating film 121. Next, a hole 123 having a diameter of about 1 μm or less is formed in the first insulating film 122 (FIG. 1B). As this forming method, a photoresist film (not shown) having an opening exposing the formation position of the hole 123 by exposing and developing the photoresist film coated on the first insulating film 122 using a mask. )) On the first insulating film 122, reactive ion etching is performed using this photoresist film as an etching mask, and then the photoresist film is removed. Next, a silicon oxide film as the second insulating film 124 is formed on the first insulating film 122 including the holes (FIG. 1C). By adjusting the deposited film thickness of the second insulating film 124, the diameter of the hole 123 is narrowed to form a fine hole 125 having a diameter of about 20 nm to 150 nm.
These base insulating film 121, first insulating film 122, and second insulating film 124 (these layers are also referred to as insulating layer 12) are all made of, for example, TEOS (Tetra Ethyl Ortho Silicate) or silane (SiH ₄ ) gas. It can be formed by the PECVD method used.

(2) Crystal Grain Formation Process As shown in FIG. 1D, a semiconductor is formed on the silicon oxide film as the second insulating film 124 and in the fine hole 125 by a film forming method such as LPCVD method or PECVD method. An amorphous silicon film 130 used as a film is formed. The amorphous silicon film 130 is preferably formed to a thickness of about 50 to 300 nm. Further, instead of the amorphous silicon film 130, a polycrystalline silicon film may be formed. When these silicon films 13 are formed by LPCVD method or PECVD method, the hydrogen content in the formed silicon film 13 may be relatively large. In such a case, heat treatment for reducing the hydrogen content of the silicon film (preferably 1% or less) is performed in order to prevent ablation of the silicon film 13 during laser irradiation, which will be described later. Good.

Next, as shown in FIG. 1E, laser irradiation L is performed on the silicon film 13. In this laser irradiation, for example, an XeCl pulse excimer laser with a wavelength of 308 nm and a pulse width of 20 to 30 ns or an XeCl excimer laser with a pulse width of about 200 ns is used, and the energy density becomes about 0.4 to 2.0 J / cm ^2. It is preferable to do so. By performing laser irradiation under such conditions, most of the irradiated laser is absorbed near the surface of the silicon film. This is because the absorption coefficient of amorphous silicon at the wavelength (308 nm) of the XeCl pulse excimer laser is relatively large at 0.139 nm ⁻¹ .

  By appropriately selecting the conditions of the laser irradiation L, the silicon film is left in a non-molten state at the bottom in the fine hole 125, and the other portions are substantially completely melted. As a result, the crystal growth of silicon after laser irradiation starts first near the bottom of the microhole and proceeds to the vicinity of the surface of the silicon film 13, that is, the substantially completely melted portion. Even in the case where the energy of the laser irradiation L is slightly stronger than this and no non-molten portion remains at the bottom of the fine hole 125, the vicinity of the surface of the silicon film 13 that is substantially completely melted, the bottom of the fine hole 125, The crystal growth of silicon after laser irradiation starts first near the bottom of the fine hole 125 and proceeds to the vicinity of the surface of the silicon film 13, that is, the substantially completely melted state as before. obtain.

  In the initial stage of silicon crystal growth, several crystal grains may be generated at the bottom of the fine hole 125. At this time, the cross-sectional dimension of the fine hole 125 (in this embodiment, the diameter of a circle) is set to be about the same as or slightly smaller than one crystal grain, so that the upper part (opening) of the fine hole 125 has 1. Only one crystal grain will reach. Thereby, in the substantially completely melted portion of the silicon film 13, crystal growth proceeds with one crystal grain reaching the top of the fine hole 125 as a nucleus, as shown in FIG. It becomes possible to form a silicon film formed by regularly arranging substantially single silicon crystal grains 131 having a large particle diameter with the fine hole 125 at the center.

  Here, the silicon substantially single crystal grain means a grain boundary (corresponding grain boundary) such as Σ3, Σ9, or Σ27 but not including an irregular grain boundary. In general, irregular grain boundaries contain a large number of silicon unpaired electrons, which is a major cause of deterioration in characteristics and variations in characteristics of thin film transistors formed there. Therefore, a thin film transistor having excellent characteristics can be realized by forming a thin film transistor therein. However, here, when the diameter of the micropore 125 is a micropore having a large diameter of about 150 nm or more, a plurality of crystal grains generated at the bottom of the micropore 125 grow and reach the top of the micropore. The silicon crystal grains formed around the fine hole 125 include irregular grain boundaries.

  In addition, it is also preferable to heat a glass substrate in the case of crystallization by the laser irradiation L mentioned above. For example, heat treatment may be performed so that the temperature of the glass substrate becomes approximately 200 ° C. to 400 ° C. by a stage on which the glass substrate is placed. Thus, by using laser irradiation and substrate heating together, the crystal grain size of each silicon single crystal grain 131 can be further increased. By using the substrate heating in combination, the grain size of the substantially silicon single crystal grains 131 can be made approximately 1.5 to 2 times that of the case where the heating is not performed. Furthermore, since the progress of crystallization is moderated by the combined use of the substrate heating, there is an advantage that the crystallinity of the substantially single crystal grains of silicon is further improved.

  By forming the micro holes 125 at desired locations on the substrate 11 as described above, silicon substantially single crystal grains 131 having relatively excellent crystallinity are formed with the micro holes 125 as the center after the laser irradiation. It becomes possible to do. Further, in the detailed investigation by the inventors of the present application, there are many regular grain boundaries in the vicinity of the fine holes 125 in the crystal grains 131, but it is confirmed that the crystallinity is particularly excellent in other cases. .

  The crystal grain size of the substantially silicon single crystal grain 131 obtained by performing the crystallization with the fine hole 125 as a starting point is about 6 μm. Therefore, by arranging a plurality of fine holes 125 at intervals of 6 μm or less, a plurality of substantially silicon single crystal grains 131 can be formed in contact with each other as shown in FIG.

  In addition, although the arrangement | positioning method of the micro hole 125 at this time is not ask | required, for example, as shown to Fig.3 (a), besides the method of arrange | positioning the microhole 125 at equal intervals on right and left, up and down, for example, FIG. As shown in FIG. 4, a method of arranging the adjacent fine holes 125 so that they are all equidistant can be considered. When the fine holes 125 are formed in this way, the planar shape of the grain boundary 132 between the crystal grains 131 becomes a substantially hexagonal shape. If the speed of crystal growth from the micropores 125 is the same for every hole, the grain boundaries 132 of the adjacent substantially single crystal grains 131 are generated along line segments that are equidistant from the micropores 125. In other words, the shape of the substantially single crystal grain 131 is not limited to that shown in FIG.

(3) Thin Film Transistor Forming Step Next, the step of forming the thin film transistor T will be described. 4 and 5 are explanatory views for explaining a process of forming the thin film transistor T. FIGS. 4 (a) and 4 (b) are plan views of the completed thin film transistor, and FIGS. FIG. 4C shows a cross-sectional view in the BB ′ direction shown in FIG.

  The silicon films 133N and 133P that are patterned by patterning the silicon film so as to remove and shape a portion that is unnecessary for the formation of the thin film transistor is formed on the silicon film in which the plurality of silicon single crystal grains 131 are arranged in this manner. Form. At this time, it is desirable that the portion that becomes the channel formation region 135N of the N-channel thin film transistor does not include the micro hole 125 and the vicinity thereof. This is because there are many corresponding grain boundaries in the micropores 125 and the periphery thereof, and there is a lot of disorder of crystallinity, and there are crystal defects such as irregular grain boundaries and voids that can exist inside the micropores 125. This is because it greatly affects the movement of electrons that are carriers of the N-channel thin film transistor. On the other hand, the portion that becomes the channel formation region 135P of the P-channel thin film transistor may be formed on or near the fine hole 125 as long as it is on the substantially silicon single crystal grain 131. In the detailed investigation by the inventors of the present application, the influence of the crystal defects in the corresponding grain boundary and the fine hole 125 included in the silicon single crystal grain 131 is slight for the holes which are carriers of the P-channel thin film transistor. This is because it was confirmed. As a result, as shown in FIG. 4, the portion that becomes the channel formation region 135 </ b> P of the P-channel thin film transistor can be freely arranged without considering the position of the fine hole 125 as long as it is on the substantially silicon single crystal grain 131. I can do it. This gives a great degree of design freedom from the viewpoint of the arrangement (layout) of the thin film transistor, particularly in the design of a CMOS circuit using both N-channel and P-channel thin film transistors.

  In general, the current drive capability of a P-channel thin film transistor is lower than that of an N-channel thin film transistor. Therefore, in order to achieve the same current drive capability, the P-channel thin film transistor has a larger channel width than the N-channel thin film transistor. It is necessary to form a thin film transistor. On the other hand, according to the present invention, since the P-channel thin film transistor can be formed around the fine hole 125 which is the approximate center of the silicon approximately single crystal grain 131, the channel width is as large as the diameter of the approximately silicon single crystal grain 131. There is an advantage that a thin film transistor can be realized. This corresponds to the P-channel thin film transistor 133P at the right end of FIG.

  FIG. 4 shows the case where the N-channel thin film transistor and the P-channel thin film transistor are formed on different silicon substantially single crystal grains. However, both channel thin film transistors may be formed on a single silicon substantially single crystal grain. .

  Next, as shown in FIG. 5A, an electron cyclotron resonance PECVD method (ECR-PECVD method) or parallel is applied to the upper surfaces of the silicon oxide film 124 (12), which is the second insulating film, and the patterned silicon film 133. A silicon oxide film 14 is formed by a flat plate type PECVD method or the like. The silicon oxide film 14 functions as a gate insulating film of the thin film transistor, and the film thickness is preferably about 10 nm to 150 nm.

Next, as shown in FIG. 5B, after forming a metal thin film such as tantalum or aluminum by a film forming method such as a sputtering method, the gate electrode 15 and the gate wiring film are formed by patterning. Then, an impurity element serving as a donor or acceptor is implanted using the gate electrode 15 as a mask, so-called self-aligned ion implantation, whereby the source region and drain region 134N of the N-channel thin film transistor, the channel formation region 135N, and the silicon film 133 are formed. A source region and a drain region 134P and a channel formation region 135P of the P-channel thin film transistor are formed. For example, in an N channel thin film transistor, phosphorus (P) is implanted as an impurity element, and in a P channel thin film transistor, boron (B) is implanted as an impurity element, and then heat treatment is performed at a temperature of about 450 ° C., or about 200 mJ / cm ^2. By irradiating the laser with the energy of, the crystallinity recovery of the silicon crystal grains damaged by the implantation of the impurity element and the activation of the impurity element are performed.

  Next, as shown in FIG. 5C, a silicon oxide film 16 having a thickness of about 500 nm is formed on the upper surface of the silicon oxide film as the gate insulating film 14 and the gate electrode 15 by a film forming method such as PECVD. Form. This silicon oxide film 16 functions as an interlayer insulating film. Next, contact holes 161 and 162 that penetrate through the interlayer insulating film 16 and the gate insulating film 14 to reach the source region and the drain region are formed, and a film forming method such as a sputtering method is formed in these contact holes. A source electrode 181 and a drain electrode 182 are formed by embedding and patterning a metal such as aluminum or tungsten.

  The thin film transistor of this embodiment is formed by the manufacturing method described above.

  Next, application examples of the thin film transistor according to the present invention will be described. The thin film transistor according to the present invention can be used as a switching element of a liquid crystal display device or as a drive element of an organic EL display device.

  FIG. 6 is a diagram illustrating a connection state of the display device 1 which is an example of the electro-optical device according to the present embodiment. As shown in FIG. 6, the display device 1 is configured by arranging a pixel region G in a display region. The pixel region G uses thin film transistors T1 to T4 that drive the organic EL light emitting element OELD. As the thin film transistors T1 to T4, those manufactured by the manufacturing method of the above-described embodiment are used. From the driver region 2, a light emission control line Vgp and a write control line Vsel are supplied to each pixel region G. From the driver region 3, a current line Idata and a power supply line Vdd are supplied to each pixel region G. By controlling the write control line Vsel and the constant current line Idata, a current program is performed for each pixel region G, and light emission is controlled by controlling the light emission control line Vgp. Further, the thin film transistors T1 to T4 of the present embodiment can use the transistor of the present invention also in the driver regions 2 and 3. In particular, the light emission control line Vgp and the write control line Vsel included in the driver regions 2 and 3 are selected. This is useful for applications that require a large current, such as buffer circuits.

  FIG. 7 is a diagram illustrating an example of an electronic apparatus to which the display device 1 can be applied. The display device 1 described above can be applied to various electronic devices.

  FIG. 7A shows an application example to a mobile phone, and the mobile phone 20 includes an antenna unit 21, an audio output unit 22, an audio input unit 23, an operation unit 234, and the display device 100 of the present invention. . Thus, the display device 1 of the present invention can be used as a display unit.

  FIG. 7B shows an application example to a video camera. The video camera 30 includes an image receiving unit 31, an operation unit 32, an audio input unit 33, and the display device 1 of the present invention. Thus, the display device 1 of the present invention can be used as a finder or a display unit.

  FIG. 7C shows an application example to a portable personal computer (so-called PDA). The computer 40 includes a camera unit 41, an operation unit 42, and the display device 1 of the present invention. Thus, the display device 1 of the present invention can be used as a display unit.

  FIG. 7D shows an application example to a head-mounted display. The head-mounted display 50 includes a band 51, an optical system storage unit 52, and the display device 1 of the present invention. Thus, the display panel of the present invention can be used as an image display source.

  FIG. 7E shows an application example to a rear projector. The projector 60 includes a light source 62, a composite optical system 63, mirrors 64 and 65, a screen 66, and the display device 1 of the present invention in a casing 61. I have. Thus, the display device 1 of the present invention can be used as an image display source.

  FIG. 7F shows an application example to a front type projector. The projector 70 includes an optical system 71 and the display device 1 of the present invention in a casing 72, and can display an image on a screen 73. Thus, the display device of the present invention can be used as an image display source.

  The display device 1 using the transistor of the present invention is not limited to the above-described example, and can be applied to any electronic device to which an active or passive matrix liquid crystal display device and organic EL display device can be applied. For example, in addition to this, it can also be used for a fax machine with a display function, a finder for a digital camera, a portable TV, an electronic notebook, an electric bulletin board, a display for advertisements, and the like.

  It is possible to combine the semiconductor device manufacturing method and the element transfer technique according to the above-described embodiment. Specifically, after applying the method according to the above-described embodiment to form a semiconductor device on the first substrate serving as the transfer source, the semiconductor device is transferred (moved) onto the second substrate serving as the transfer destination. To do. Thereby, as the first substrate, a substrate having conditions (shape, size, physical characteristics, etc.) convenient for the formation of the semiconductor film and the subsequent element formation can be used. A fine and high-performance semiconductor element can be formed thereon. In addition, the second substrate is not subject to restrictions on the element formation process, and can be increased in area, and an inexpensive substrate made of synthetic resin, soda glass, or a flexible plastic film, It is possible to use a desired one from a wide range of options. Therefore, a fine and high-performance thin film semiconductor element can be easily (low cost) formed on a large-area substrate.

It is explanatory drawing explaining the process of forming a micropore and forming a silicon | silicone substantially single crystal grain. It is explanatory drawing explaining the process of forming a silicon | silicone substantially single crystal grain. It is a top view explaining the relationship between the arrangement | positioning of a micropore and the shape of the substantially single crystal grain formed corresponding to the arrangement | positioning, when a silicon | silicone substantially single crystal grain is formed. FIG. 5 is a plan view showing N-channel and P-channel thin film transistors, mainly focusing on a gate electrode and an active region (a source region, a drain region, a channel formation region) and omitting other configurations. It is explanatory drawing explaining the process of forming an N channel and P channel thin-film transistor. It is a figure which shows the connection state of the display apparatus which is an example of an electro-optical apparatus. It is a figure which shows the example of the electronic device which can apply a display apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 11 ... Glass substrate, 12 (121, 122, 124), 14, 16 ... Silicon oxide film, 123 ... Recessed part, 125 ... Micropore, 13 ... Silicon film, 131 ... Silicon single crystal grain, 132 ... Crystal grain boundary, 133 ... Semiconductor film (transistor region), 133N ... Semiconductor film (N channel thin film transistor region), 133P ... Semiconductor film (P channel thin film transistor region), 15 ... Gate electrode, 134N ... Source region and drain region of N channel thin film transistor, 134P ... Source region and drain region of P-channel thin film transistor, 135N ... Channel formation region of N-channel thin film transistor, 135P ... Channel formation region of P-channel thin film transistor, 1 ... Display device

Claims (5)

A method of manufacturing a semiconductor device, wherein a thin film transistor is formed using a semiconductor film on an insulating substrate having at least one surface,
A starting point forming step for forming a plurality of starting points to be a starting point for crystallization of the semiconductor film on the substrate;
A semiconductor film forming step of forming a semiconductor film on the substrate on which the starting portion is formed;
A heat treatment step of performing heat treatment on the semiconductor film to form a plurality of substantially single crystal grains each having a substantially center at each of the plurality of starting points;
Patterning the semiconductor film to form a transistor region to be a source region, a drain region and a channel formation region;
Forming a gate insulating film and a gate electrode on the transistor region to form an N-channel thin film transistor and a P-channel thin film transistor, and
In the patterning step, the N-channel thin film transistor is formed on the substantially single crystal grain so as not to include the starting portion, and the P-channel thin film transistor is formed on the substantially single crystal grain.   The method of manufacturing a semiconductor device according to claim 1, wherein the starting portion is a recess formed in the substrate.   The method of manufacturing a semiconductor device according to claim 1, wherein the heat treatment step is performed by laser irradiation. A semiconductor device comprising an N-channel thin film transistor and a P-channel thin film transistor formed using a semiconductor film formed on a substrate,
The semiconductor film includes a plurality of substantially single crystal grains formed from a plurality of starting points provided on the substrate,
Of the thin film transistors, the N channel thin film transistor is formed on the substantially single crystal grain so as not to include the starting portion, and the P channel thin film transistor is formed on the substantially single crystal grain. The semiconductor device according to claim 4, wherein the starting point is a recess formed in the substrate.

Images