JP2004336012A - Method of manufacturing semiconductor film, method of manufacturing semiconductor device, integrated circuit, electro-optic device, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique for substantially obtain a single crystal having a large grain size when a semiconductor film is melted and crystallized with a micropore serving as a starting point of crystal growth. <P>SOLUTION: A method of manufacturing a semiconductor thin film comprises a micropore forming step of forming a micropore (14) on an insulating film (12) formed on a substrate (10), a film forming step of forming a non-single crystal semiconductor film (16) in the micropore (14) and on the insulating film (12), a first heat treatment (18) for melting and crystallizing the non-single crystal semiconductor film (16), and a crystallizing step of forming a crystalline semiconductor film (22) by performing a second heat treatment (20) in parallel to prevent a decrease in temperature after melting the non-single crystal semiconductor film (16). <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a semiconductor thin film and a semiconductor device. In particular, the present invention relates to a technique for obtaining a substantially single crystal having a large crystal grain size when manufacturing a crystalline silicon film.

  In order to improve the electrical characteristics of a thin film transistor used for a liquid crystal display device or an EL (electroluminescence) display device, a technique of forming a semiconductor thin film by growing a substantially single crystal silicon film has been proposed (Non-Patent Document 1). ). In this technique, a fine hole is formed in an insulating film on a substrate, and an amorphous silicon film is formed on the insulating film and in the fine hole. While maintaining the amorphous silicon in the bottom of the hole in a non-molten state, the amorphous silicon film in the other part is brought into a molten state, so that the amorphous silicon held in the non-molten state becomes a crystal nucleus. Thus, a substantially single crystal silicon film is formed by causing the crystal growth.

"Single Crystal Thin Film Transistors", IBM TECHNICAL DISCLOSURE BULLETIN Aug.1993 pp257-258

  In the above-described method, only the silicon film is instantaneously melted by laser irradiation for crystallization, and the temperature of the film after the melting is rapidly lowered. When the film temperature of the silicon film rapidly decreases in this manner, it is difficult to sufficiently secure the time required for the large growth of the crystal grains, and the crystal grains having substantially the center of the micropores are further enlarged. It was difficult. Such inconvenience becomes more remarkable as the thickness of the silicon film becomes thinner, which hinders an attempt to improve the characteristics of a semiconductor element (particularly, a thin film transistor) by making the silicon film thinner.

  Therefore, the present invention makes it possible to further increase the grain size of the crystal grains in the case where the semiconductor film is melt-crystallized with the micropores as starting points for crystal growth to form substantially single crystal grains. The purpose is to provide the technology to do.

  In order to solve the above problems, a method of manufacturing a semiconductor thin film according to the present invention includes a step of forming a fine hole in an insulating film formed on a substrate, and a step of forming a non-uniform hole in the fine hole and on the insulating film. A film forming step of forming a crystalline semiconductor film, a first heat treatment for melting and crystallizing the non-single-crystal semiconductor film, and a second heat treatment for suppressing a decrease in temperature of the non-single-crystal semiconductor film after melting. In parallel to form a crystalline semiconductor film.

  According to the above method, by performing the second heat treatment in parallel with the first heat treatment, the molten state after the non-single-crystal semiconductor film is melted can be maintained for a longer time. Note that the first heat treatment and the second heat treatment are preferably performed at the same time. Crystal growth centered on the crystal nucleus at the bottom of the micropore cannot proceed further unless the melted state of the portion is maintained when the growth reaches a certain portion. According to the method of the present invention, it is possible to keep a crystal state of a substantially single crystal in a molten state such that the growth of a substantially single crystal crystal centered on a micropore is sufficiently advanced. The particle size can be reduced. In addition, when the temperature of the non-single-crystal semiconductor film melted by the first heat treatment is rapidly lowered, crystal nuclei are randomly generated in portions other than the micropores, and crystal grains grow largely around the crystal nuclei, In some cases, the progress of crystal growth centered on the micropores may be hindered. However, by suppressing the decrease in the film temperature by the method of the present invention, it is possible to suppress the crystal growth in a region other than these fine holes. As a result, the crystal grains of the substantially single crystal that grow around the micropores are hardly hindered from coming into contact with the crystal grains generated in places other than the micropores, and the crystal grains of the substantially single crystal grow sufficiently. It is possible to do.

  In addition, in particular, according to the method of the present invention, even when the thickness of the semiconductor film to be melt-crystallized is small, it is possible to suppress a rapid decrease in temperature. A semiconductor film excellent in quality can be formed thinner. With the use of such a crystalline semiconductor film, the electrical characteristics of the thin film transistor can be improved by reducing the thickness of the channel formation region. Furthermore, crystallization proceeds under mild conditions without rapid temperature change, and the time required for crystal grain growth can be secured longer, so that the crystallinity of the crystal grains is improved and the crystal grains formed are improved. There is also an advantage that crystal defects hardly occur therein.

  In the present invention, “substantially single crystal” means not only a single crystal grain but also a state close to this, that is, even if a plurality of crystals are combined, the number thereof is small, From the viewpoint of the above, the case where the semiconductor thin film has substantially the same properties as a semiconductor thin film formed of a single crystal is included.

  The first heat treatment is preferably performed by laser irradiation. This makes it possible to efficiently perform melt crystallization. Various lasers such as an excimer laser, a solid-state laser, and a bus laser can be used.

  In the first heat treatment according to the present invention, the non-single-crystal semiconductor film in a region other than the fine holes is brought into a substantially completely molten state, and the non-single-crystal semiconductor film in the fine holes is brought into a partially molten state. It is preferable to be performed. Under such conditions, melt crystallization can be performed more favorably using the non-molten state portion as a crystal nucleus.

  The second heat treatment is preferably an instantaneous thermal annealing treatment. The rapid thermal annealing (RTA) process can be performed by, for example, an annealing device using halogen light. Since the silicon film hardly absorbs light having a long wavelength, it is preferable to heat the silicon film with light having a short wavelength. Therefore, it is desirable to use halogen light. Heating and raising the temperature by a halogen lamp provided in the annealing apparatus enable high-precision temperature control, and the rate of temperature rise and fall is high, so that throughput can be improved. Instead of a halogen lamp, an infrared lamp, an arc lamp, a graphite heater, or the like can be used as a heating source. In addition, for the second heat treatment, various heat treatment apparatuses used for manufacturing semiconductor devices, such as a furnace (furnace) used for a thermal oxidation process, can be used.

  Further, the second heat treatment is preferably performed by laser irradiation. An excimer laser, a solid-state laser, a gas laser, or the like can be used as the laser, and the wavelength is set to a value that the non-single-crystal semiconductor film can absorb. Thus, the non-single-crystal semiconductor film can be locally heated.

  The first heat treatment is to selectively apply heat to a part of the non-single-crystal semiconductor film, and the second heat treatment is to heat at least a part of the non-single-crystal semiconductor film where the first heat treatment is performed. It is also preferable to do so. Thus, the second heat treatment can be performed with less energy than when the entire non-single-crystal semiconductor film is heated.

  It is also preferable that both the first heat treatment and the second heat treatment are performed by laser irradiation. In that case, it is preferable that the first heat treatment be performed with a short pulse laser and the second heat treatment be performed with a laser or a continuous wave laser having a longer pulse width than the short pulse laser in the first heat treatment. This makes it possible to suitably perform the first and second heat treatments when two types of lasers are combined.

  Further, it is preferable that the second heat treatment be controlled so that the amount of heat applied to the non-single-crystal semiconductor film gradually decreases. More preferably, the control for gradually reducing the heat quantity is started at the same time as or after the first heat treatment is performed. By performing such control, the temperature of the semiconductor film is gradually lowered when crystallization proceeds, so that the crystallinity of the crystalline semiconductor film can be further improved.

  The present invention is also a method of manufacturing a semiconductor device including an element forming step of forming a semiconductor device using the crystalline semiconductor film manufactured by the above-described method of manufacturing a semiconductor thin film. Here, in the present invention, the “semiconductor device” refers to a device including the crystalline semiconductor film according to the present invention, and includes a transistor, a diode, a resistor, an inductor, a capacitor, other active elements, and a single element regardless of a passive element. Including. By using the crystalline semiconductor film according to the present invention, a semiconductor device having excellent characteristics can be obtained.

  In the above-described method for manufacturing a semiconductor device, it is more preferable to form the semiconductor device using a portion of the crystalline semiconductor film that does not include micropores. A portion having slightly poor crystallinity may be formed in the vicinity of the fine hole. Therefore, when the semiconductor device is formed without including this portion, the characteristics of the semiconductor device can be further improved. In the above-described method for manufacturing a semiconductor device, in the case where a thin film transistor is formed as the semiconductor device, it is preferable that fine holes be provided corresponding to positions where the thin film transistor is to be formed. This makes it possible to accurately select a region where a thin film transistor is to be formed and form a crystalline semiconductor film in the region.

  Further, the present invention is an integrated circuit including a semiconductor device manufactured by applying the above-described manufacturing method, an electro-optical device, and an electronic apparatus.

  Here, the “integrated circuit” refers to a circuit (chip) in which a semiconductor device and related wirings are integrated and wired so as to perform a certain function.

  The present invention provides, in an electro-optical device, a plurality of pixel regions, a semiconductor device provided for each pixel region, and an electro-optical element controlled by the semiconductor device. It is manufactured by a manufacturing method.

  Here, the “electro-optical device” generally refers to a device having an electro-optical element that emits light by an electric action or changes the state of external light, and includes a semiconductor device according to the present invention. Includes both those that emit light and those that control the passage of external light. For example, as an electro-optical element, a liquid crystal element, an electrophoretic element having a dispersion medium in which electrophoretic particles are dispersed, an EL (electroluminescence) element, and an electron emitting element that emits light by applying electrons generated by application of an electric field to a light emitting plate are provided. Active matrix type display device.

  Here, “electronic equipment” refers to general equipment having a certain function provided with the semiconductor device according to the present invention, and includes, for example, an electro-optical device and a memory. Although the configuration is not particularly limited, for example, an IC card, a mobile phone, a video camera, a personal computer, a head-mounted display, a rear or front type projector, a facsimile apparatus with a display function, a finder of a digital camera, and a portable TV , A DSP device, a PDA, an electronic organizer, an electronic bulletin board, a display for publicity, and the like.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<First embodiment>
FIG. 1 is a diagram illustrating a method for manufacturing a semiconductor thin film according to the present embodiment.

(Micropore formation step)
First, as shown in FIG. 1A, a silicon oxide film 12 as an insulating film is formed on a substrate 10. Examples of a method for forming the silicon oxide film 12 on the substrate 10 include a physical vapor deposition method such as a plasma chemical vapor deposition method (PECVD method), a low-pressure chemical vapor deposition method (LPCVD method), or a sputtering method. . For example, a silicon oxide film 12 having a thickness of several 100 nm can be formed by a PECVD method.

Next, as shown in FIG. 1A, fine holes 14 are formed at predetermined positions of the silicon oxide film 12. For example, by performing a photolithography step and an etching step, a fine hole 14 having a circular cross section with a diameter of about 0.1 μm can be formed at a predetermined position in the plane of the silicon oxide film 12. For example, reactive ion etching using plasma of CHF ₃ gas can be employed as an etching method. When the diameter of the fine holes 14 is about 0.5 μm, the diameter of the fine holes 14 can be reduced to about 0.1 μm by depositing a new silicon oxide film on the entire surface of the substrate having the fine holes 14. .

(Deposition process)
Next, as shown in FIG. 1B, an amorphous silicon film 16 is formed as a non-single-crystal semiconductor film on the silicon oxide film 12 and in the fine holes 14. The amorphous silicon film can be formed by PECVD, LPCVD, atmospheric pressure chemical vapor deposition (APCVD), sputtering, or the like, and preferably has a thickness of about 50 nm to 300 nm. Note that a polycrystalline silicon film may be formed instead of the amorphous silicon film.

(Crystallization step)
Next, as shown in FIG. 1C, the amorphous silicon film 16 is irradiated with a laser 18 as a first heat treatment, and at the same time, an instantaneous thermal annealing treatment using a halogen lamp 20 is performed as a second heat treatment. I do.

A XeCl pulse excimer laser (wavelength 308 nm, pulse width 30 nsec) is used as the laser 18, and the energy density is 0.4 to 1.5 J / cm ² (the thickness of the amorphous silicon film 16 is 50 to 500 nm, preferably It is preferable to perform laser irradiation at a wavelength of 50 nm to 250 nm).

Here, the irradiated XeCl pulse excimer laser is mostly absorbed near the surface of the amorphous silicon film 16. This 0.139Nm ^-1 absorption coefficient of amorphous silicon and crystalline silicon at the wavelength (308 nm) of the XeCl pulsed excimer laser, respectively, is larger and 0.149nm ^-1. Further, the silicon oxide film 12 is substantially transparent to the laser and does not absorb the energy of the laser, so that the silicon oxide film 12 is not melted by the laser irradiation. Thereby, the amorphous silicon film 16 in the region other than the fine holes 14 is almost completely melted over the entire region in the thickness direction. Further, the surface of the amorphous silicon film 16 in the fine hole 14 is melted, and is not melted at the bottom of the fine hole 14 (partially melted state).

  The solidification of silicon after the laser irradiation starts first inside the micropores 14 and thereafter reaches a portion (surface portion) of the amorphous silicon film 16 in a substantially completely molten state. At this time, some crystal grains are generated in the vicinity of the bottom of the fine hole 14. However, the cross-sectional dimension (the diameter of a circle in the present embodiment) of the fine hole 14 is set to be equal to or slightly smaller than one crystal grain. By doing so, only one crystal grain reaches the upper part (opening) of the fine hole 14. With the crystal grains reaching the openings of the fine holes 14 as nuclei, crystal growth of a substantially single crystal is started.

  On the other hand, the amorphous silicon film 16 is heated by the halogen lamp 20 at the same time as the irradiation of the laser 18, and the temperature drop after melting is suppressed. The second heat treatment can be performed by using laser irradiation different from the laser 18 instead of the halogen lamp. When a laser is used for the second heat treatment, only a portion of the amorphous silicon film 16 that is melted by the irradiation of the laser 18 can be selectively heated, which is efficient.

  By performing the second heat treatment, the crystal grains generated at the bottom of the micropores 14 reach the opening, and the film is melted so that the crystal growth of the substantially single crystal sufficiently proceeds using the crystal grains as a seed crystal. The state can be maintained. As a result, as shown in FIG. 1D, the growth of the crystal grains with the micropores substantially at the center progresses in the direction of the arrow with sufficient time, and it is possible to increase the grain size of the crystal grains. .

  Further, by maintaining the film temperature, the formation of the crystal 23 centered on the crystal nucleus existing in a place other than the fine holes 14 as shown in FIG. The growth of the substantially single-crystal silicon film (crystalline silicon film) 22 at the center is not hindered.

  Further, when the thickness of the amorphous silicon film 16 is small, the film temperature tends to decrease rapidly and the crystal grains tend to be small by irradiation only with the laser 18. Such a problem can be avoided.

  In addition, since crystallization proceeds sufficiently for a long time under mild conditions without rapid temperature change, the generation of crystal defects in the crystalline silicon film 22 (crystalline semiconductor film) is avoided as much as possible, The effect that improvement can be achieved is also obtained.

(Element formation step)
Next, a process of forming a semiconductor element using the crystalline semiconductor film 22 manufactured by the above-described manufacturing method will be described using a thin film transistor as an example.

  FIG. 3 is a diagram illustrating an element forming step. First, as shown in FIG. 3A, the crystalline semiconductor film 22 is patterned, and portions unnecessary for forming a thin film transistor are removed and shaped.

  Next, as shown in FIG. 3B, a silicon oxide film 24 is formed on the silicon oxide film 12 and the crystalline silicon film 22. For example, the silicon oxide film 24 can be formed by electron cyclotron resonance PECVD (ECR-CVD) or PECVD. This silicon oxide film 24 functions as a gate insulating film of the thin film transistor.

Next, as shown in FIG. 3C, a gate electrode 26 is formed by forming a metal thin film of tantalum or aluminum by a sputtering method and then patterning. Next, using the gate electrode 26 as a mask, impurity ions serving as donors or acceptors are implanted, and a source / drain region 28 and a channel forming region 30 are formed in a self-aligned manner with respect to the gate electrode 26. In the case of manufacturing an NMOS transistor, for example, phosphorus (P) is implanted into the source / drain region at a concentration of 1 × 10 ¹⁶ cm ⁻² as an impurity element. After that, the impurity element is activated by irradiating a XeCl excimer laser at an irradiation energy density of about 400 mJ / cm ² or by performing a heat treatment at a temperature of about 250 ° C. to 450 ° C.

  Next, as shown in FIG. 3D, a silicon oxide film 32 is formed on the upper surfaces of the silicon oxide film 24 and the gate electrode 26. For example, a silicon oxide film 32 of about 500 nm is formed by PECVD. Next, a contact hole reaching the source / drain region 28 is opened in the silicon oxide films 24 and 32, and a source / drain electrode 34 is formed in the contact hole and on the peripheral portion of the contact hole on the silicon oxide film 32. The source / drain electrodes 34 may be formed by depositing aluminum by, for example, a sputtering method. Further, a contact hole reaching the gate electrode 26 is formed in the silicon oxide film 32 to form a terminal electrode for the gate electrode 26. Thus, a thin film transistor T as a semiconductor device according to the present invention can be manufactured.

  In the example shown in FIG. 3, for convenience of explanation, the fine holes 14 are illustrated to be located directly below the thin film transistors. However, it is also preferable that the formation positions of the fine holes 14 be removed from immediately below the thin film transistors T. is there. In this case, in the patterning step described with reference to FIG. 3A, the formation position of the fine hole 14 may be removed when patterning a portion to be the active region 30 or the like of the thin film transistor T.

  As described above, in the present embodiment, by simultaneously performing the melt crystallization using the laser 18 and the heating using the halogen lamp 20, it is possible to realize a substantially single crystal having a large grain size. Since it can be considered that there is almost no crystal grain boundary in the crystalline silicon film 22 thus obtained, an effect of greatly reducing a barrier when carriers such as electrons and holes flow can be obtained. By using the crystalline semiconductor film 22 obtained by the present invention for an active region of a thin film transistor, a high-performance thin film transistor having small off-state current and high mobility can be formed.

<Second embodiment>
In the first embodiment described above, the case where the instantaneous thermal annealing using a halogen lamp is performed as the second heat treatment is mainly described. However, the second heat treatment can also be performed by laser irradiation. Hereinafter, a preferred embodiment in that case will be described. Note that the description of the same contents as those in the first embodiment will not be repeated.

  FIG. 4 is a diagram illustrating a method for manufacturing a semiconductor thin film according to the second embodiment.

(Micropore formation step)
First, as shown in FIG. 4A, a silicon oxide film 12 as an insulating film is formed on a substrate 10, and fine holes 14 are formed at predetermined positions in the silicon oxide film 12. The specific forming method is the same as in the first embodiment.

(Deposition process)
Next, as shown in FIG. 4B, an amorphous silicon film 16 is formed as a non-single-crystal semiconductor film on the silicon oxide film 12 and in the fine holes 14. The specific forming method is the same as in the first embodiment.

(Crystallization step)
Next, as shown in FIG. 4C, the amorphous silicon film 16 is irradiated with a laser 18 as a first heat treatment, and at the same time, is irradiated with a laser 19 as a second heat treatment.

As the laser 18 for the first heat treatment, it is preferable to use a short pulse laser as in the first embodiment. Also in this example, a XeCl pulse excimer laser (wavelength: about 308 nm, pulse width: about 30 nsec) is used as the laser 18, and the energy density is 0.4 to 1.5 J / cm ² (the thickness of the amorphous silicon film 16 is 50 nm to 50 nm). Laser irradiation is performed at 500 nm, preferably 50 nm to 250 nm.

  Further, as the laser 19 for the second heat treatment, it is preferable to use a laser or a continuous wave laser having a longer pulse width than the short pulse laser in the first heat treatment. In this example, since the semiconductor film is made of silicon, any laser can be used as the laser 19 with a wavelength that can be absorbed by the silicon film and heat can be applied. For example, it is preferable to use the second harmonic (wavelength 532 nm) of a YAG laser as the laser 19. The pulse width is preferably set to a pulse width sufficiently longer than the laser beam for the first heat treatment (for example, about 100 to 1000 times) or a continuous wave. By using a laser in such a wavelength range, a necessary and sufficient amount of heat can be given to the amorphous silicon film 16. Note that the laser 19 for the second heat treatment may be performed from the back side of the substrate 10.

  FIG. 5 is a diagram schematically illustrating the control of the laser irradiation time as the second heat treatment. In the figure, the horizontal axis corresponds to time, and the vertical axis corresponds to laser intensity (arbitrary unit).

  As shown in FIG. 5, assuming that the laser 18 as the first heat treatment is irradiated at a certain time t1 (see the graph H1), the irradiation of the laser 19 as the second heat treatment starts at least almost at the same time as the time t1. It is sufficient that the irradiation is continued for a while after the irradiation of the laser 18 is completed. More preferably, the irradiation of the laser 19 is started before time t1 as shown in the figure (see graph H2, H3 or H4). As a result, a sufficient amount of heat can be applied to the amorphous silicon film 16 to increase the crystal grain size. It is also preferable that the irradiation intensity of the laser 19 is gradually reduced so that the amount of heat applied to the amorphous silicon film is gradually reduced (see graph H3 or H4). In this case, it is more preferable that the control for gradually decreasing the heat quantity is started after time t1, that is, at the same time as or after the first heat treatment by the laser 18 is performed. By performing such control, the temperature of the silicon film is gradually reduced when crystallization proceeds, so that the crystallinity of the crystalline silicon film can be further improved.

(Element formation step)
Thereafter, a semiconductor element is formed using the crystalline semiconductor film 22 in the same manner as in the first embodiment (see FIG. 3).

  Thus, also in the second embodiment, by simultaneously performing the melt crystallization using the laser 18 as the first heat treatment and the heating using the laser 19 as the second heat treatment, it is possible to increase the grain size of the substantially single crystal. Can be realized. Since it can be considered that there is almost no crystal grain boundary in the crystalline silicon film 22 thus obtained, an effect of greatly reducing a barrier when carriers such as electrons and holes flow can be obtained. By using the crystalline semiconductor film 22 obtained by the present invention for an active region of a thin film transistor, a high-performance thin film transistor having small off-state current and high mobility can be formed.

  In particular, in the present embodiment, the second heat treatment is performed by using the laser 19 having a wavelength that is easily absorbed by the silicon film. Selective heating that hardly imparts the heat. Thereby, even when a relatively inexpensive glass substrate containing a large amount of impurities is used as the substrate 10, it is possible to suppress the transfer of impurities from the glass substrate to the silicon film due to heating.

<Third embodiment>
Next, an electro-optical device including a semiconductor device and the like manufactured by the method for manufacturing a semiconductor device of the present invention will be described.

  FIG. 6 is a diagram illustrating a connection diagram of the electro-optical device 100 according to the second embodiment. The electro-optical device (display device) 100 of the present embodiment includes a light emitting layer OELD capable of emitting light by an electroluminescent effect in each pixel region, a storage capacitor for storing a current for driving the light emitting layer OELD, and a manufacturing method of the present invention. A semiconductor device manufactured by the above method, here, is configured to include thin film transistors T1 to T4. From the driver area 101, a scanning line Vsel and a light emission control line Vgp are supplied to each pixel area. From the driver area 102, a data line Idata and a power supply line Vdd are supplied to each pixel area. By controlling the scanning line Vsel and the data line Idata, current programming is performed for each pixel region, and light emission by the light emitting unit OELD can be controlled.

  Note that the above driving circuit is an example of a circuit when an electroluminescent element is used as a light emitting element, and other circuit configurations are possible. It is also preferable that the integrated circuits forming each of the driver regions 101 and 102 be formed by the semiconductor device according to the present invention.

<Fourth embodiment>
The fourth embodiment relates to an electronic apparatus including a semiconductor device manufactured by the method for manufacturing a semiconductor device of the present invention.

  FIG. 7 is a diagram illustrating an example of an electronic device according to the third embodiment. FIG. 7A illustrates an example of a mobile phone on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. The mobile phone 230 includes an electro-optical device (display panel) 100, an antenna unit 231, an audio output. A section 232, a voice input section 233 and an operation section 234 are provided. The method for manufacturing a semiconductor device of the present invention is applied to, for example, manufacturing of a semiconductor device provided in the display panel 100 or an integrated circuit incorporated therein. FIG. 7B shows an example of a video camera on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. The video camera 240 includes an electro-optical device (display panel) 100, an image receiving unit 241, and an operation unit. 242 and a voice input unit 243. The method for manufacturing a semiconductor device of the present invention is applied to, for example, manufacturing of a semiconductor device provided in the display panel 100 or an integrated circuit incorporated therein.

  FIG. 7C illustrates an example of a portable personal computer on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. The computer 250 includes an electro-optical device (display panel) 100, a camera unit 251 and an operation unit. A portion 252 is provided. The method for manufacturing a semiconductor device of the present invention is applied to, for example, manufacturing of a semiconductor device provided in the display panel 100 or an integrated circuit incorporated therein. FIG. 7D shows an example of a head-mounted display on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. The head-mounted display 260 includes an electro-optical device (display panel) 100, a band unit 261 and a band unit 261. An optical system storage section 262 is provided. The method for manufacturing a semiconductor device of the present invention is applied to, for example, manufacturing of a semiconductor device provided in the display panel 100 or an integrated circuit incorporated therein.

  FIG. 7E shows an example of a rear projector on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. The projector 270 includes an electro-optical device (optical modulator) 100, a light source 272, and synthetic optics. A system 273 and mirrors 274 and 275 are provided in the housing 271. The method of manufacturing a semiconductor device according to the present invention is applied to, for example, manufacturing of a semiconductor device provided in the optical modulator 100 or a built-in circuit. FIG. 7F shows an example of a front type projector on which a semiconductor device or the like manufactured by the manufacturing method of the present invention is mounted. The projector 280 has an electro-optical device (image display source) 100 and an optical system 281 in a housing. An image can be displayed on the screen 283 provided in the body 282. The method for manufacturing a semiconductor device of the present invention is applied to, for example, manufacturing of a semiconductor device provided in the image display source 100 or an integrated circuit incorporated therein.

  The method for manufacturing a semiconductor device according to the present invention is not limited to the above example, and can be applied to the manufacture of any electronic device. For example, in addition to the above, the present invention can be applied to a fax device with a display function, a finder of a digital camera, a portable TV, a DSP device, a PDA, an electronic organizer, an electronic bulletin board, a display for advertising, an IC card, and the like.

  The present invention is not limited to the above-described embodiments, and various modifications and changes can be made within the scope of the present invention. For example, in the above-described embodiment, a silicon film has been described as an example of the semiconductor film, but the semiconductor film is not limited to this. Further, in the above-described embodiment, a thin film transistor has been described as an example of a semiconductor element formed using the crystalline semiconductor film according to the present invention. However, the semiconductor element is not limited to this. (For example, a thin film diode) may be formed.

FIG. 3 is a diagram illustrating a method for manufacturing a semiconductor thin film according to the first embodiment. It is a figure which shows the comparative example in which the growth of the crystalline silicon film on a substantially single crystal is prevented by the crystal grain centering on the crystal nucleus which generate | occur | produced at random. It is a figure explaining an element formation process. FIG. 6 is a diagram illustrating a method for manufacturing a semiconductor thin film according to the second embodiment. It is a figure which illustrates roughly control of laser irradiation time as 2nd heat processing. FIG. 14 is a connection diagram of the electro-optical device according to the third embodiment. FIG. 14 is a diagram illustrating an example of an electronic device according to a fourth embodiment.

Explanation of reference numerals

  Reference Signs List 10: substrate, 12, 24, 32: silicon oxide film, 14: micropore, 16: amorphous silicon film, 18: laser (first heat treatment), 19: laser (second heat treatment), 20: halogen Lamp: 22 crystalline silicon film, 26: gate electrode, 28: source / drain region, 30: channel formation region, 34: source / drain electrode, 100: electro-optical device, T: thin film transistor

Claims (13)

A micropore forming step of forming micropores in the insulating film formed on the substrate,
A film forming step of forming a non-single-crystal semiconductor film in the micropores and on the insulating film;
A first heat treatment for melting and crystallizing the non-single-crystal semiconductor film and a second heat treatment for suppressing a decrease in temperature after melting of the non-single-crystal semiconductor film are performed in parallel to form the crystalline semiconductor film. A crystallization step to form;
A method for manufacturing a semiconductor film, comprising:   The method according to claim 1, wherein the first heat treatment is performed by laser irradiation.   The first heat treatment is performed under the condition that the non-single-crystal semiconductor film in a region other than the micropores is substantially completely melted and the non-single-crystal semiconductor film in the micropores is partially melted. The method for manufacturing a semiconductor film according to claim 1.   4. The method according to claim 1, wherein the second heat treatment is an instantaneous thermal annealing process. 5.   4. The method according to claim 1, wherein the second heat treatment is performed by laser irradiation. 5.   The first heat treatment selectively applies heat to a part of the non-single-crystal semiconductor film, and the second heat treatment includes at least the first heat treatment of the non-single-crystal semiconductor film. The method for manufacturing a semiconductor film according to claim 1, wherein a portion to be heated is heated. The first heat treatment is performed by a short pulse laser,
2. The method of manufacturing a semiconductor film according to claim 1, wherein the second heat treatment is performed by using a laser having a longer pulse width or a continuous wave laser than the short pulse laser in the first heat treatment. 3.   The method of manufacturing a semiconductor film according to claim 1, wherein the second heat treatment is controlled so that the amount of heat applied to the non-single-crystal semiconductor film gradually decreases.   The method of manufacturing a semiconductor film according to claim 8, wherein the control for gradually decreasing the amount of heat is started after the first heat treatment is performed.   A method for manufacturing a semiconductor device, comprising: an element forming step of forming a semiconductor element using the crystalline semiconductor film manufactured by the manufacturing method according to claim 1.   An integrated circuit comprising a semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 10.   An electro-optical device comprising a semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 10. An electronic apparatus comprising the electro-optical device according to claim 12.

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